CN107858752A - A kind of crystal silicon Woolen-making liquid and preparation method thereof - Google Patents
A kind of crystal silicon Woolen-making liquid and preparation method thereof Download PDFInfo
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- 239000007788 liquid Substances 0.000 title claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 24
- 229910052710 silicon Inorganic materials 0.000 title claims description 24
- 239000010703 silicon Substances 0.000 title claims description 24
- 239000013078 crystal Substances 0.000 title claims description 15
- 238000002360 preparation method Methods 0.000 title claims description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 36
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 32
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 239000008367 deionised water Substances 0.000 claims abstract description 15
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910002092 carbon dioxide Inorganic materials 0.000 claims abstract description 13
- 239000001569 carbon dioxide Substances 0.000 claims abstract description 12
- 239000005708 Sodium hypochlorite Substances 0.000 claims abstract description 11
- 239000003513 alkali Substances 0.000 claims abstract description 11
- 239000003054 catalyst Substances 0.000 claims abstract description 11
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 11
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 5
- 238000003860 storage Methods 0.000 claims description 10
- 239000005715 Fructose Substances 0.000 claims description 5
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 claims description 5
- 229930091371 Fructose Natural products 0.000 claims description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- 229920001732 Lignosulfonate Polymers 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 239000011734 sodium Substances 0.000 claims description 5
- 239000001509 sodium citrate Substances 0.000 claims description 5
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000004065 wastewater treatment Methods 0.000 abstract description 3
- 239000003960 organic solvent Substances 0.000 abstract description 2
- 239000002904 solvent Substances 0.000 abstract description 2
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 8
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052911 sodium silicate Inorganic materials 0.000 description 6
- 235000019795 sodium metasilicate Nutrition 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000003912 environmental pollution Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 235000017550 sodium carbonate Nutrition 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- 229910001868 water Inorganic materials 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910003641 H2SiO3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Or Physical Treatment Of Fibers (AREA)
- Treatments For Attaching Organic Compounds To Fibrous Goods (AREA)
Abstract
本发明公开了一种晶硅制绒液,按质量百分比计,包括:氢氧化钠含量为30%~50%;异丙醇含量为0.2%~0.5%;无水乙醇含量为0.4%~0.8%;液态二氧化碳含量为5%~10%;次氯酸钠含量为5%~10%;碱催化剂含量为2%~5%;非离子表面活性剂含量为3%~8%;余量为去离子水;本发明还公开了一种晶硅制绒液的制备方法,包括以下步骤:1)在反应釜中加入去离子水,随后将氢氧化钠溶解于去离子水中,再依次加入异丙醇和无水乙醇;2)加入液态二氧化碳和碱催化剂;3)然后加入次氯酸钠和非离子表面活性剂,获得制品。本发明可以有效的减少常规有机溶剂异丙醇、无水乙醇的用量,大大减少溶剂挥发所造成的作业环境污染和废水处理费用,降低COD和生产成本。The invention discloses a crystalline silicon texturing liquid, which comprises, in terms of mass percentage: 30% to 50% of sodium hydroxide; 0.2% to 0.5% of isopropanol; and 0.4% to 0.8% of absolute ethanol %; the content of liquid carbon dioxide is 5% to 10%; the content of sodium hypochlorite is 5% to 10%; the content of alkali catalyst is 2% to 5%; the content of nonionic surfactant is 3% to 8%; the balance is deionized water The present invention also discloses a method for preparing crystalline silicon texturing liquid, comprising the following steps: 1) adding deionized water to the reaction kettle, dissolving sodium hydroxide in deionized water, adding isopropanol and water ethanol; 2) adding liquid carbon dioxide and an alkali catalyst; 3) adding sodium hypochlorite and a nonionic surfactant to obtain a product. The invention can effectively reduce the consumption of conventional organic solvents such as isopropanol and absolute ethanol, greatly reduce the working environment pollution and waste water treatment costs caused by solvent volatilization, and reduce COD and production costs.
Description
技术领域technical field
本发明涉及半导体制绒技术领域,具体涉及一种晶硅制绒液及其制备方法。The invention relates to the technical field of semiconductor texturing, in particular to a crystal silicon texturing liquid and a preparation method thereof.
背景技术Background technique
信息时代,随着能源的不断消耗,可再生能源的重要性将越来越突出,如太阳能、风能、潮汐能等可再生能源,作为其中佼佼者的太阳能是目前利用率和普及率最高的新能源,其发展之迅猛前所未有,而我国作为世界光伏产业大国正在向强国漫进,与其相配套的电子化学品产业却相对落后,严重制约了产业链的优势发展。In the information age, with the continuous consumption of energy, the importance of renewable energy will become more and more prominent, such as solar energy, wind energy, tidal energy and other renewable energy. Energy, its rapid development is unprecedented, and my country, as the world's largest photovoltaic industry, is advancing towards a strong country, but its supporting electronic chemicals industry is relatively backward, which seriously restricts the advantageous development of the industrial chain.
太阳能电池也称光伏电池,是一种将太阳能的光能直接转化为电电能的半导体器件,由于它是绿色环保产品,不会引起环境污染,而且是可再生资源,所以在当今能源短缺的情形下,太阳能电池是一种具有广阔发展前途的新型能源。Solar cells, also known as photovoltaic cells, are semiconductor devices that directly convert solar light energy into electrical energy. Because they are green and environmentally friendly products, they will not cause environmental pollution, and they are renewable resources. Therefore, in today's energy shortage situation Under the circumstances, solar cells are a new type of energy with broad development prospects.
目前,太阳能电池片的制备工艺已经标准化,其主要步骤如下:At present, the preparation process of solar cells has been standardized, and the main steps are as follows:
1.制绒:通过化学反应使原本光亮的硅片表面(包括正面和背面)形成凸凹不平的结构以延长在其表面的传播路径,从而提高太阳能电池片对光的吸收效率。1. Texturing: Through chemical reaction, the originally bright silicon wafer surface (including the front and back) forms an uneven structure to extend the propagation path on its surface, thereby improving the light absorption efficiency of solar cells.
2.扩散制结:P型硅片在扩散后表面变成N型,形成PN结,使得硅片具有光伏效应。扩散的浓度、深度以及均匀性直接影响太阳能电池片的电性能,扩散进杂质的总量用方块电阻来衡量,杂质总量越小,方块电阻越大。2. Diffusion junction: After diffusion, the surface of the P-type silicon wafer becomes N-type, forming a PN junction, so that the silicon wafer has a photovoltaic effect. The concentration, depth, and uniformity of diffusion directly affect the electrical properties of solar cells. The total amount of diffused impurities is measured by sheet resistance. The smaller the total amount of impurities, the greater the sheet resistance.
3.周边刻蚀:该步骤的目的在于去掉刻蚀制结时再硅片边缘形成的讲PN结两端短路的导电层。3. Peripheral etching: the purpose of this step is to remove the conductive layer that short-circuits the two ends of the PN junction formed on the edge of the silicon wafer during etching.
4.沉积减反射膜:目前主要有两类减反射膜,氮化硅膜和氧化钛膜,主要起减反射和钝化作用。4. Deposit anti-reflection film: At present, there are mainly two types of anti-reflection film, silicon nitride film and titanium oxide film, which mainly play the role of anti-reflection and passivation.
5.印刷电极。5. Printed electrodes.
6.烧结:使印刷的电极与硅片之间形成合金。6. Sintering: to form an alloy between the printed electrode and the silicon wafer.
在太阳能电池片的主要制备工艺中,制绒工艺是第一步工艺,其主要作用是去除硅片表面的损伤层,以及在其表面形成良好的绒面,增加对光的吸收,同时保证后续的扩散制结、沉积减反射膜等工艺,进而保证丝网烧结后太阳能电池的效率,所以经过制绒工艺后的硅片表面的大小、形态、均匀度以及硅片表面的光亮程度对整个太阳能电池片的生产和其最终转换效率有着至关重要的影响。In the main preparation process of solar cells, the texturing process is the first step process, its main function is to remove the damaged layer on the surface of the silicon wafer, and form a good textured surface on the surface to increase the absorption of light, while ensuring the subsequent Diffusion junction, deposition of anti-reflection film and other processes to ensure the efficiency of solar cells after screen sintering, so the size, shape, uniformity and brightness of the silicon wafer surface after the texturing process have a great impact on the entire solar energy The production of the cell and its final conversion efficiency have a crucial impact.
硅片制绒生产过程中,溶液失效是生产工艺波动的根本主要原因,失效的原因在于反应过程中NaOH的不断消耗和Na2SiO3的不断产生,导致反应物-OH浓度降低,且硅片表面无法与其获得足够的接触速率;而且由于反应在高温80~90度左右进行,往往发生剧烈反应产生大量气泡,且所得绒面并不理想。During the silicon wafer texturing production process, solution failure is the main reason for the fluctuation of the production process. The reason for the failure lies in the continuous consumption of NaOH and the continuous production of Na2SiO3 during the reaction process, which leads to a decrease in the concentration of the reactant -OH, and the surface of the silicon wafer cannot communicate with it. Obtain a sufficient contact rate; and because the reaction is carried out at a high temperature of about 80 to 90 degrees, a violent reaction often occurs to generate a large number of bubbles, and the resulting suede is not ideal.
但是现有的传统工艺一般是通过添加硅酸钠和IPA(异丙醇)来抑制反应的进行,控制反应速率,从而得到比较好的绒面状态,公开号为CN 104282796B的“一种硅晶制绒液及其制备方法”,其采用大量的异丙醇和无水乙醇来抑制反应,从而使得制绒效果更好,但是异丙醇和无水乙醇的大量使用,会造成作业环境污染以及高额的废水处理费用,无法降低生产成本。But the existing traditional technology generally suppresses the progress of the reaction by adding sodium silicate and IPA (isopropanol), controls the reaction rate, thereby obtains a relatively good suede state, and the publication number is CN 104282796B "a kind of silicon crystal Texturing solution and its preparation method", which uses a large amount of isopropanol and absolute ethanol to inhibit the reaction, thereby making the texture better, but the use of a large amount of isopropanol and absolute ethanol will cause environmental pollution and high cost Wastewater treatment costs, unable to reduce production costs.
发明内容Contents of the invention
本发明的目的在于提供一种晶硅制绒液及其制备方法,以解决上述背景技术中提出的问题。The object of the present invention is to provide a crystalline silicon texturing liquid and a preparation method thereof, so as to solve the problems raised in the above-mentioned background technology.
为实现上述目的,本发明提供如下技术方案:To achieve the above object, the present invention provides the following technical solutions:
一种晶硅制绒液,按质量百分比计,包括:A crystal silicon texturing liquid, by mass percentage, comprising:
氢氧化钠,含量为30%~50%;Sodium hydroxide, the content is 30%~50%;
异丙醇,含量为0.2%~0.5%;Isopropanol, the content is 0.2% to 0.5%;
无水乙醇,含量为0.4%~0.8%;Absolute ethanol, the content is 0.4% to 0.8%;
液态二氧化碳,含量为5%~10%;Liquid carbon dioxide, the content is 5% to 10%;
次氯酸钠,含量为5%~10%;Sodium hypochlorite, the content is 5% to 10%;
碱催化剂,含量为2%~5%;Alkali catalyst, the content is 2% to 5%;
非离子表面活性剂,含量为3%~8%;Non-ionic surfactant, the content is 3% to 8%;
余量为去离子水。The balance is deionized water.
优选的,非离子表面活性剂,其为柠檬酸钠、果糖纳以及木质素磺酸盐以1:1:3质量份组成。Preferably, the nonionic surfactant is composed of sodium citrate, sodium fructose and lignosulfonate in a ratio of 1:1:3 by mass.
一种晶硅制绒液的制备方法,包括以下步骤:A preparation method of crystal silicon texturing liquid, comprising the following steps:
1)、在反应釜中加入去离子水,随后将氢氧化钠溶解于去离子水中,再依次加入异丙醇和无水乙醇;1), add deionized water into the reaction kettle, then dissolve sodium hydroxide in deionized water, then add isopropanol and absolute ethanol in turn;
2)、将步骤1)中获得的混合溶液倒入存储罐内,并同时加入液态二氧化碳和碱催化剂;2), pour the mixed solution obtained in step 1) into the storage tank, and add liquid carbon dioxide and alkali catalyst simultaneously;
3)、对步骤2)中的存储罐进行加压过滤,然后加入次氯酸钠和非离子表面活性剂,获得制品。3), pressurize and filter the storage tank in step 2), and then add sodium hypochlorite and nonionic surfactant to obtain the product.
与现有技术相比,本发明的有益效果是:Compared with prior art, the beneficial effect of the present invention is:
本发明通过在溶液中添加液态二氧化碳、次氯酸钠以及碱催化剂以达到促进Si与-OH的接触速率,从而稳定溶液体系,延长溶液失效周期,稳定工艺,拓宽工艺容差范围,从而更好的对晶硅进行制绒,并且有效的减少常规有机溶剂异丙醇、无水乙醇的用量,大大减少溶剂挥发所造成的作业环境污染和废水处理费用,降低COD和生产成本。The present invention promotes the contact rate of Si and -OH by adding liquid carbon dioxide, sodium hypochlorite and an alkali catalyst in the solution, thereby stabilizing the solution system, prolonging the failure period of the solution, stabilizing the process, and widening the process tolerance range, thereby better aligning the crystal Silicon is used for texturing, and the amount of conventional organic solvents isopropanol and absolute ethanol is effectively reduced, greatly reducing the environmental pollution and waste water treatment costs caused by solvent volatilization, and reducing COD and production costs.
具体实施方式Detailed ways
下面将对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
实施例一:Embodiment one:
在反应釜中加入去离子水,按照质量百分比,将30%的氢氧化钠溶解于去离子水中,再依次加入0.2%的异丙醇和0.4%的无水乙醇,随后将混合溶液倒入存储罐内,并同时加入5%的液态二氧化碳和2%的碱催化剂,然后对存储罐进行加压过滤,最后加入5%的次氯酸钠和3%的柠檬酸钠、果糖纳以及木质素磺酸盐以1:1:3质量份组成的非离子表面活性剂,从而获得该制绒液。Add deionized water into the reaction kettle, according to the mass percentage, dissolve 30% sodium hydroxide in deionized water, then add 0.2% isopropanol and 0.4% absolute ethanol in turn, and then pour the mixed solution into the storage tank and add 5% liquid carbon dioxide and 2% alkali catalyst at the same time, then pressurize the storage tank, and finally add 5% sodium hypochlorite and 3% sodium citrate, fructose sodium and lignosulfonate to 1 : 1:3 non-ionic surfactant composed of 3 parts by mass to obtain the texturing liquid.
使用该制绒液对晶硅进行制绒,保持制绒温度在80℃,制绒时长为30min,制绒完成后,晶硅的厚度减少了6.3微米,腐蚀效果更佳,反射率降低,腐蚀坑更均匀。Use this texturing liquid to make texture on crystal silicon, keep the texture temperature at 80°C, and the texture time is 30 minutes. After the texture is completed, the thickness of crystal silicon is reduced by 6.3 microns, the corrosion effect is better, the reflectivity is reduced, and the corrosion The pits are more uniform.
实施例二:Embodiment two:
在反应釜中加入去离子水,按照质量百分比,将50%的氢氧化钠溶解于去离子水中,再依次加入0.5%的异丙醇和0.8%的无水乙醇,随后将混合溶液倒入存储罐内,并同时加入10%的液态二氧化碳和5%的碱催化剂,然后对存储罐进行加压过滤,最后加入10%的次氯酸钠和8%的柠檬酸钠、果糖纳以及木质素磺酸盐以1:1:3质量份组成的非离子表面活性剂,从而获得该制绒液。Add deionized water into the reaction kettle, according to the mass percentage, dissolve 50% sodium hydroxide in deionized water, then add 0.5% isopropanol and 0.8% absolute ethanol in turn, then pour the mixed solution into the storage tank In, and add 10% liquid carbon dioxide and 5% alkali catalyst simultaneously, carry out pressurized filtration to storage tank then, finally add 10% sodium hypochlorite and 8% sodium citrate, fructose sodium and lignosulfonate to 1 : 1:3 non-ionic surfactant composed of 3 parts by mass to obtain the texturing liquid.
使用该制绒液对晶硅进行制绒,保持制绒温度在80℃,制绒时长为30min,制绒完成后,晶硅的厚度减少了6.7微米,腐蚀效果更佳,反射率降低,腐蚀坑更均匀。Use this texturing liquid to make texture on crystal silicon, keep the temperature of texture at 80°C, and the time for texture is 30 minutes. After the texture is completed, the thickness of crystal silicon is reduced by 6.7 microns, the corrosion effect is better, the reflectivity is reduced, and the corrosion The pits are more uniform.
实施例三:Embodiment three:
在反应釜中加入去离子水,按照质量百分比,将40%的氢氧化钠溶解于去离子水中,再依次加入0.3%的异丙醇和0.6%的无水乙醇,随后将混合溶液倒入存储罐内,并同时加入8%的液态二氧化碳和3%的碱催化剂,然后对存储罐进行加压过滤,最后加入7%的次氯酸钠和5%的柠檬酸钠、果糖纳以及木质素磺酸盐以1:1:3质量份组成的非离子表面活性剂,从而获得该制绒液。Add deionized water into the reaction kettle, according to the mass percentage, dissolve 40% sodium hydroxide in deionized water, then add 0.3% isopropanol and 0.6% absolute ethanol in turn, then pour the mixed solution into the storage tank Inside, and add 8% liquid carbon dioxide and 3% alkali catalyst simultaneously, carry out pressurized filtration to storage tank then, finally add 7% sodium hypochlorite and 5% sodium citrate, fructose sodium and lignosulfonate with 1 : 1:3 non-ionic surfactant composed of 3 parts by mass to obtain the texturing liquid.
使用该制绒液对晶硅进行制绒,保持制绒温度在80℃,制绒时长为30min,制绒完成后,晶硅的厚度减少了6.5微米,腐蚀效果更佳,反射率降低,腐蚀坑更均匀。Use this texturing liquid to make texture on crystal silicon, keep the texture temperature at 80°C, and the texture time is 30 minutes. After the texture is completed, the thickness of crystal silicon is reduced by 6.5 microns, the corrosion effect is better, the reflectivity is reduced, and the corrosion The pits are more uniform.
晶硅制绒的反应原理如方程式:Si+2NaOH+H2O==Na2SiO3+2H2↑,为了加速促进Si与-OH的接触速率,加入了次氯酸钠作为氧化剂,对Si进行氧化得到SiO2,根据方程式:SiO2+2NaOH====Na2SiO3+H2O,可以得到Si在氧化后,配合着碱催化剂的使用,可以更快更进一步与NaOH发生反应。The reaction principle of crystalline silicon texturing is shown in the equation: Si+2NaOH+H2O==Na2SiO3+2H2↑. In order to accelerate the contact rate between Si and -OH, sodium hypochlorite is added as an oxidant to oxidize Si to obtain SiO2. According to the equation: SiO2 +2NaOH====Na2SiO3+H2O, it can be obtained that after Si is oxidized, with the use of alkali catalyst, it can react with NaOH faster and further.
而且Na2SiO3的生成,可以在制绒温度下与二氧化碳液体发生反应,如方程式:CO2+Na2SiO3+H2O==Na2CO3+H2SiO3,其中Na2CO3可以提高晶硅表面活性,而且二氧化碳溶液将Na2CO3反应掉,促进此方程式加速向右侧进行,从而加速了上述Si与NaOH的反应,也就进一步的加速促进了Si与-OH的接触速率,以达到减少异丙醇、无水乙醇使用量的目的,不再需要很大程度上的对反应进行抑制,也可以使得制绒效果更好,更均匀。And the generation of Na2SiO3 can react with carbon dioxide liquid at the temperature of making texture, such as the equation: CO2+Na2SiO3+H2O==Na2CO3+H2SiO3, wherein Na2CO3 can improve the surface activity of crystal silicon, and the carbon dioxide solution will react Na2CO3 to promote this The equation is accelerated to the right, thereby accelerating the above-mentioned reaction between Si and NaOH, and further accelerating the contact rate between Si and -OH, so as to achieve the purpose of reducing the amount of isopropanol and absolute ethanol, and no longer need Inhibiting the reaction to a large extent can also make the texturing effect better and more uniform.
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。Although the embodiments of the present invention have been shown and described, those skilled in the art can understand that various changes, modifications and substitutions can be made to these embodiments without departing from the principle and spirit of the present invention. and modifications, the scope of the invention is defined by the appended claims and their equivalents.
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