CN107845715B - light-emitting device - Google Patents

Abstract

The present invention discloses a light-emitting device, comprising a bearing seat, a first bracket, a second bracket and a semiconductor light-emitting element, wherein the bearing seat has an upper surface and a lower surface relative to the upper surface; the first bracket has a slot, and the first bracket is arranged on the upper surface and does not penetrate the lower surface; the second bracket is inserted into the slot; the semiconductor light-emitting element is fixed on the first bracket, wherein the semiconductor light-emitting element comprises a substrate and a light-emitting diode structure, the substrate has a supporting surface and a main surface arranged oppositely, and the light-emitting diode structure is arranged on the supporting surface. The light-emitting device of the present invention can achieve multi-directional or omnidirectional lighting, and improve the light-emitting efficiency and light-emitting effect.

Description

light-emitting device

technical field

The present invention provides a light-emitting device, especially a light-emitting device capable of providing a multidirectional light source.

Background technique

The light emitted by a light emitting diode (LED) itself is a directional light source, not a divergent light source like a traditional light bulb. Therefore, the application of light-emitting diodes is limited. For example, conventional light emitting diodes cannot or are difficult to achieve the desired luminous effect in general indoor/outdoor lighting applications. In addition, the light-emitting device of a conventional light-emitting diode can only emit light from one side, so its luminance efficiency is lower than that of a conventional light-emitting device for general indoor/outdoor lighting.

SUMMARY OF THE INVENTION

One of the objectives of the present invention is to provide a light-emitting device capable of emitting a multidirectional light source to solve the above-mentioned problems.

In order to achieve one of the above objectives of the present invention, an embodiment of the present invention provides a light-emitting device, which includes a bearing base, a first bracket, a second bracket and a semiconductor light-emitting element. The bearing seat has an upper surface and a surface opposite to the upper surface. The lower surface of the first bracket; the first bracket has a slot, and the first bracket is arranged on the upper surface and does not penetrate the lower surface; the second bracket is inserted into the slot; the semiconductor light-emitting element is fixed on the first bracket, wherein, The semiconductor light-emitting element includes a substrate, a light-emitting diode structure, and a wavelength conversion layer. The substrate has a supporting surface, a main surface, and a side surface disposed opposite to each other. The light-emitting diode structure is disposed on the supporting surface. The area of the structure, the wavelength conversion layer is disposed on the support surface, the wavelength conversion layer covers the light emitting diode structure and does not cover the side surface; wherein, the first bracket and the second bracket include opaque circuit boards.

As a further improvement of an embodiment of the present invention, the base plate includes an extension portion disposed on the first bracket.

As a further improvement of an embodiment of the present invention, the light-emitting device further includes a group of connection electrodes disposed on the extension portion, and the group of connection electrodes is electrically connected to the light-emitting diode structure and the first bracket.

As a further improvement of an embodiment of the present invention, the light-emitting device further includes a post disposed on the bearing base, wherein one of the first bracket and the second bracket is fixed on the post.

As a further improvement of an embodiment of the present invention, the strut includes a slot, and one of the first bracket and the second bracket is fixed on the strut through the slot.

As a further improvement of an embodiment of the present invention, the strut includes two card slots, and the first bracket and the second bracket are respectively fixed on the strut through the card slots.

As a further improvement of an embodiment of the present invention, the strut further includes a slot disposed on the end surface of the strut, and the slot is extended and connected to the card slot.

As a further improvement of an embodiment of the present invention, the first bracket has an area not smaller than that of the semiconductor light-emitting element.

As a further improvement of an embodiment of the present invention, the first bracket has an area more than three times larger than that of the semiconductor light-emitting element.

As a further improvement of an embodiment of the present invention, the light-emitting device further includes:

a base for carrying the carrier; and

The lampshade is connected to the base and covers the bearing seat, the first bracket, the second bracket and the semiconductor light-emitting element.

Compared with the prior art, the light-emitting device of the present invention can achieve multi-directional or omni-directional lighting, thereby improving light-emitting efficiency and light-emitting effect.

Description of drawings

1 and FIG. 2 are schematic structural diagrams of a semiconductor light emitting device according to a preferred embodiment of the present invention.

FIG. 3 , FIG. 4 and FIG. 5 are schematic diagrams of coupling between different forms of light emitting diode structures and wires according to a preferred embodiment of the present invention.

FIG. 6 and FIG. 7 are schematic diagrams of the configuration of the wavelength conversion layer according to a preferred embodiment of the present invention.

8 is a schematic cross-sectional view of a semiconductor light-emitting device according to another preferred embodiment of the present invention.

9 is a schematic cross-sectional view of a semiconductor light-emitting device according to another preferred embodiment of the present invention.

FIG. 10 is a schematic perspective view of a semiconductor light emitting device according to another preferred embodiment of the present invention.

FIG. 11 is a schematic diagram of a bearing seat according to a preferred embodiment of the present invention.

FIG. 12 is a schematic diagram of a circuit board according to a preferred embodiment of the present invention.

FIG. 13 is a schematic diagram of a reflector according to a preferred embodiment of the present invention.

14 is a schematic diagram of a diamond-like carbon film according to a preferred embodiment of the present invention.

FIG. 15 is a schematic diagram of a light-emitting device according to another preferred embodiment of the present invention.

FIG. 16 is a schematic diagram of a light-emitting device according to another preferred embodiment of the present invention.

FIG. 17 is a schematic diagram of a light emitting device according to another preferred embodiment of the present invention.

FIG. 18 , FIG. 19 and FIG. 20 are schematic diagrams of the transparent substrate being plugged or joined to the carrier according to a preferred embodiment of the present invention.

FIG. 21 and FIG. 22 are schematic diagrams of a preferred embodiment of the present invention, wherein the transparent substrate is joined to the support base with the bracket.

FIG. 23 is a schematic diagram of a light-emitting device according to another preferred embodiment of the present invention.

24 is a schematic diagram of a device base of a light-emitting device according to another preferred embodiment of the present invention.

FIG. 25 is a schematic perspective view of a light-emitting device according to another preferred embodiment of the present invention.

FIG. 26 , FIG. 27 , FIG. 28 and FIG. 29 are schematic diagrams of the transparent substrate disposed on the carrying mechanism in a point-symmetric or line-symmetric form according to a preferred embodiment of the present invention.

FIG. 30 is a schematic diagram of a light-emitting device according to another preferred embodiment of the present invention.

31 and 32 are schematic diagrams of a lampshade according to a preferred embodiment of the present invention.

33 is a schematic diagram of a semiconductor light emitting device according to a preferred embodiment of the present invention.

FIG. 34 is a schematic diagram of a light-emitting device according to another preferred embodiment of the present invention.

FIG. 35 is a schematic diagram of the assembly of the stent according to the preferred embodiment of the present invention.

36 is a schematic diagram of a light-emitting device with a lampshade according to a preferred embodiment of the present invention.

FIG. 37 is a schematic diagram of a light-emitting device according to another preferred embodiment of the present invention.

FIG. 38 is a schematic diagram of a combination of a bracket and a support column of a light-emitting device according to a preferred embodiment of the present invention.

Description of drawing numbers:

1. 310 semiconductor light-emitting components

1a The first group of light-emitting components

1b The second group of light-emitting components

11, 10, 10', 50, 301, 302 Lighting device

12M non-planar structure

14 LED structure

141 Substrate

142 N-type semiconductor layer

143 Active layer

144 P-type semiconductor layer

18 Second connecting lead

2 Transparent substrate

2e extension

20 First connecting lead

22 Second connecting lead

210 Support surface

21A First major surface

21B Second major surface

23A connecting lead

23B Second connecting wire

25, 9 type diamond carbon film

26 carrier

28 Die Bonding Layer

28A first die bonding layer

28B Second die bonding layer

3 LED structure

30, 32 electrodes

31 Connecting the electrodes

31A, 16 first electrode

31B, 18 Second electrode

311A first connection electrode

311B Second connection electrode

322 Device Base

330 Notch

34 Glowing Surfaces

341 Carrier

342 Strips

4 wavelength conversion layer

5, 26 Bearing seat

5a Center of symmetry

51, 62, 321 bracket

621 slot

623 Pillar

623a card slot

623b pilot hole

623c slotted

52, 63 Component bonding layer

6 circuit board

60 Carrying mechanism

61 slots

64 base

7 Lampshade

8 Filters

θ1 first included angle

V+, V- drive voltage

L light

P circuit pattern

H hole

G notch

Detailed ways

The present invention will be described in detail below with reference to the specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and structural, method, or functional changes made by those skilled in the art according to these embodiments are all included in the protection scope of the present invention.

Please refer to FIG. 1 and FIG. 2 . FIGS. 1 and 2 are schematic structural diagrams of a semiconductor light-emitting device according to a preferred embodiment of the present invention. As shown in FIGS. 1 and 2 , the semiconductor light emitting device 1 includes a transparent substrate 2 , a support surface 210 , a first main surface 21A, a second main surface 21B and at least one light emitting diode structure 3 that emits light in multiple directions. The flat or sheet-shaped transparent substrate 2 itself has two main surfaces, one of which is a support surface 210 , on which the light-emitting diode structures 3 with light-emitting function can be disposed. The light emitting surface 34 of the light emitting diode structure 3 that is not shielded by the transparent substrate 2 and the part of the supporting surface 210 not provided with the light emitting diode structure 3 together form a first main surface 21A that can emit light. The other main surface of the transparent substrate 2 without the light emitting diode structure 3 is the second main surface 21B. The above arrangement can be reversed, and the light emitting diode structures 3 can also be disposed on both sides of the transparent substrate 2 . In an embodiment of the present invention, the light emitting diode structures 3 can be disposed on the supporting surface 210 of the transparent substrate 2 and are correspondingly staggered with other light emitting diode structures 3 disposed on the second main surface 21B, so that each surface of the transparent substrate 2 is staggered. When the light emitting diode structure 3 is illuminated, the light is not shielded by other light emitting diode structures 3 on the other side of the transparent substrate 2 , so that the light emitting intensity of the semiconductor light emitting device 1 can be correspondingly increased. The material of the transparent substrate 2 may include one or a combination of materials selected from aluminum oxide (Al ₂ O ₃ ) or sapphire containing aluminum oxide, silicon carbide (SiC), glass, plastic or rubber, etc., wherein the present invention One of the preferred embodiments uses a sapphire substrate as the transparent substrate 2 , because the sapphire substrate is generally a single crystal structure, not only has good light transmittance, but also has good heat dissipation capability, which can prolong the life of the semiconductor light-emitting element 1 . However, the use of the traditional sapphire substrate in the present invention has the problem of being easily broken, so the present invention has been verified by experiments, and the transparent substrate 2 of the present invention is preferably a sapphire substrate with a thickness greater than or equal to 200 micrometers (um), which can achieve Better reliability, better bearing and light transmission. In order to make the semiconductor light emitting device 1 effectively emit multidirectional light, such as bidirectional or omnidirectional light, the semiconductor light emitting device 1 of the present invention preferably has at least one light emitting diode structure 3 with a light emitting angle greater than 180 degrees. Correspondingly, the light emitting diode structure 3 disposed on the transparent substrate 2 can emit light from the light emitting surface 34 away from the transparent substrate 2 , and the light emitting diode structure 3 also emits at least part of the light entering the transparent substrate 2 . The light entering the transparent substrate 2 can not only exit from the second main surface 21B of the transparent substrate 2 , but also exit the part of the supporting surface 210 where the light-emitting diode structure 3 is not provided or other surfaces of the substrate 2 . In this way, the semiconductor light-emitting element 1 can emit light from at least two sides, in multiple directions, or in all directions. In the present invention, the area of the first main surface 21A or the area of the second main surface 21B is more than five times the total area of the light-emitting surfaces 34 of all the light-emitting diode structures 3 disposed on the surface, so as to take into account the light-emitting efficiency. and heat dissipation and other conditions for a better configuration ratio.

In addition, another preferred embodiment of the present invention is that the color temperature difference between the first main surface 21A and the second main surface 21B of the semiconductor light emitting element 1 is equal to or less than 1500K, so that the semiconductor light emitting element 1 has a uniform luminous effect. In particular, when the thickness of the transparent substrate 2 is as described above, and the light-emitting wavelength range of the light-emitting diode structure 3 is greater than or equal to 420 nm, or less than or equal to 470 nm, the light transmittance of the transparent substrate 2 can be greater than or equal to 70 nm. %.

The present invention is not limited to the above-mentioned embodiments. The following will introduce other preferred embodiments of the present invention in sequence, and in order to facilitate the comparison of the differences between the embodiments and simplify the description, the same symbols are used to denote the same or similar components in the following embodiments, and mainly focus on Differences between the embodiments will be described, and repeated parts will not be repeated.

Please refer to FIG. 3 , FIG. 4 and FIG. 5 , the light emitting diode structure 3 of the present invention includes a first electrode 31A and a second electrode 31B to obtain power to emit light. The first electrode 31A and the second electrode 31B are respectively electrically connected to the first connection wire 23A and the second connection wire 23B on the transparent substrate 2 . 3 , FIG. 4 and FIG. 5 respectively disclose the coupling manners of the light emitting diode structures 3 and the wires in different forms. FIG. 3 shows a horizontal light emitting diode structure. The light emitting diode structure 3 is formed on the supporting surface 210 of the transparent substrate 2 . The first electrode 31A and the second electrode 31B are electrically coupled to the first connecting wire 23A and the The second connecting wire 23B. FIG. 4 shows the flip-chip light emitting diode structure 3 . The light emitting diode structure 3 is inverted and the light emitting diode structure 3 is coupled to the transparent substrate 2 through the first electrode 31A and the second electrode 31B. The first electrode 31A and the second electrode 31B are directly coupled to the first connecting wire 23A and the second connecting wire 23B by welding or bonding, respectively. As shown in FIG. 5 , the first electrode 31A and the second electrode 31B are disposed on different surfaces of the light emitting diode structure 3, and the light emitting diode structure 3 is disposed in a vertical manner, so that the first electrode 31A and the second electrode 31B can be respectively connected to the first electrode The wire 23A and the second connection wire 23B are connected.

Please refer to FIG. 6 and FIG. 7 , the semiconductor light emitting device 1 of the present invention may further include a wavelength conversion layer 4 selectively disposed on the first main surface 21A or/and the second main surface 21B, or directly disposed on the light emitting surface on the diode structure 3. The wavelength conversion layer 4 may directly contact the light emitting diode structure 3 , or may be adjacent to the light emitting diode structure 3 at a distance without direct contact. The wavelength conversion layer 4 contains at least one type of phosphor, for example, phosphors of inorganic or organic materials such as garnet-based, sulfate-based, or silicate-based phosphors. The wavelength conversion layer 4 is used for absorbing at least part of the light emitted by the light emitting diode structure 3 and converting the light into another wavelength range. For example, when the light emitting diode structure 3 emits blue light, the wavelength conversion layer 4 can convert part of the blue light into yellow light, so that the semiconductor light emitting device 1 finally emits white light when the blue light and yellow light are mixed. In addition, since the light source of the first main surface 21A mainly comes from the light directly emitted by the light emitting diode structure 3, and the light source of the second main surface 21B is the light emitted from the light emitting diode structure 3 through the transparent substrate 2, the first main surface 21B is the light emitted by the transparent substrate 2. The light intensity (illuminance) of the surface 21A may be different from the light intensity (illuminance) of the second main surface 21B. Therefore, in the semiconductor light emitting device 1 according to another preferred embodiment of the present invention, the phosphor content of the wavelength conversion layer 4 disposed on the first main surface 21A and the second main surface 21B is correspondingly configured. Preferably, the ratio of the phosphor content of the wavelength conversion layer 4 disposed on the first main surface 21A to the phosphor content of the wavelength conversion layer 4 disposed on the second main surface 21B can be preferably from 1 to 1. 0.5 to 1 to 3, but vice versa. In this way, the illuminance or luminous effect of the semiconductor light-emitting element 1 of the present invention can meet different application requirements, and the color temperature difference between the first main surface 21A and the second main surface 21B of the semiconductor light-emitting element 1 can be controlled to be equal to or less than 1500K, In order to improve the wavelength conversion efficiency and light-emitting effect of the semiconductor light-emitting element 1 .

Please refer to Figure 8. FIG. 8 is a schematic cross-sectional view of a semiconductor light-emitting device according to another preferred embodiment of the present invention. As shown in FIG. 8 , the semiconductor light emitting device 1 of this embodiment includes a transparent substrate 2 and at least one light emitting diode structure 14 for providing multidirectional light output. The transparent substrate 2 has a supporting surface 210 and a second main surface 21B disposed opposite to each other. The light emitting diode structure 14 is disposed on the support surface 210 of the transparent substrate 2 . The light emitting diode structure 14 includes a first electrode 16 and a second electrode 18 to be electrically connected to other devices. The light emitting surface 34 of the light emitting diode structure 14 which is not shielded by the transparent substrate 2 and the part of the supporting surface 210 where the light emitting diode structure 14 is not provided together form the first main surface 21A.

The light emitting diode structure 14 may include a substrate 141 , an N-type semiconductor layer 142 , an active layer 143 and a P-type semiconductor layer 144 . In this embodiment, the base 141 of the light emitting diode structure 14 can be coupled to the transparent substrate 2 through the die-bonding layer 28 . The light output brightness can be improved due to the optimization of the material properties of the die bonding layer 28 . For example, the reflectivity of the chip bonding layer 28 is preferably between the reflectivity of the base 141 and the reflectivity of the transparent substrate 2 , so as to increase the brightness of the light emitting diode structure 14 . In addition, the chip bonding layer 28 can be transparent adhesive or other suitable bonding materials. The first electrode 16 and the second electrode 18 are disposed on the other side of the light emitting diode structure 14 opposite to the chip bonding layer 28 . The first electrode 16 and the second electrode 18 are respectively electrically connected to the P-type semiconductor layer 144 and the N-type semiconductor layer 142 (the connection relationship between the second electrode 18 and the N-type semiconductor layer 142 is not shown in FIG. 8 ). The upper surface of the first electrode 16 and the upper surface of the second electrode 18 have substantially the same level. The first electrode 16 and the second electrode 18 may be metal electrodes, but not limited thereto. In addition, the semiconductor light emitting component 1 further includes a first connection wire 20 , a second connection wire 22 and a wavelength conversion layer 4 . The first connection wires 20 and the second connection wires 22 are arranged on the transparent substrate 2 . The first connection wires 20 and the second connection wires 22 may be metal wires or other conductive patterns, but are not limited thereto. The first electrode 16 and the second electrode 18 are respectively connected to the first connection wire 20 and the second connection wire 22 by wire bonding or welding, but are not limited thereto. The wavelength conversion layer 4 is disposed on the transparent substrate 2 and covers the light emitting diode structure 14 . In addition, the wavelength conversion layer 4 can also be disposed on the second main surface 21B of the transparent substrate 2 .

Besides, in this embodiment, in order to increase the light output from the transparent substrate 2 and make the light distribution uniform, the surface of the transparent substrate 2 may optionally be provided with a non-planar structure 12M. The non-planar structures 12M can be various protruding or concave geometric structures, such as pyramids, cones, hemispheres, or triangular pillars, etc., and can be arranged regularly or randomly. Furthermore, a diamond-like carbon (DLC) film 25 can also be selectively disposed on the surface of the transparent substrate 2 to increase the heat conduction and heat dissipation effects.

Please refer to FIG. 9 , which is a schematic cross-sectional view of a semiconductor light-emitting device according to another preferred variant of the present invention. Compared with the embodiment shown in FIG. 8 , in the semiconductor light emitting device 1 of this embodiment, the first electrode 16 , the second electrode 18 and the first die bonding layer 28A are disposed on the same side of the light emitting diode structure 14 . The first electrode 16 and the second electrode 18 are electrically connected to the first connection wire 20 and the second connection wire 22 by means of flip chip. Wherein, the first connecting wire 20 and the second connecting wire 22 may extend outward from the corresponding positions of the first electrode 16 and the second electrode 18 respectively. The first electrode 16 and the second electrode 18 can be electrically connected to the first connection wire 20 and the second connection wire 22 respectively through the second die-bonding layer 28B. The second die bonding layer 28B can be conductive bumps, such as gold bumps or solder bumps, conductive paste, such as silver paste, or eutectic alloy layer, such as gold-tin alloy layer (Au-Sn) or a low melting point alloy layer (In-Bi-Sn), but not limited thereto. In this embodiment, the first die bonding layer 28A may be absent or include the wavelength conversion layer 4 .

Please refer to FIG. 10 . FIG. 10 is a schematic three-dimensional view of a semiconductor light-emitting device according to another preferred embodiment of the present invention. As shown in FIG. 10 , the semiconductor light emitting device 310 of the present invention includes a transparent substrate 2 , at least one light emitting diode structure 3 , a first connection electrode 311A, a second connection electrode 311B and at least one wavelength conversion layer 4 . The light emitting diode structure 3 is disposed on the supporting surface 210 of the transparent substrate 2 and forms a first main surface 21A capable of emitting light. In this embodiment, the light emitting angle of the light emitting diode structure 3 is greater than 180 degrees, and at least part of the light emitted by the light emitting diode structure 3 will enter the transparent substrate 2 , and at least a part of the incident light will pass from the corresponding first main surface 21A The second main surface 21B of the transparent substrate 2 emits light, and the rest of the incident light can emit light from other surfaces of the transparent substrate 2 , so that the semiconductor light emitting element 310 can emit light in multiple directions. The first connection electrodes 311A and the second connection electrodes 311B are respectively disposed on different sides or the same side of the transparent substrate 2 (not shown in FIG. 10 ). The first connection electrode 311A and the second connection electrode 311B are the external electrodes of the semiconductor light emitting element 310, and can be formed by the extension of the first connection wire and the second connection wire on the transparent substrate 2, respectively. The two connection electrodes 311B are correspondingly electrically connected to the light emitting diode structure 3 . The wavelength conversion layer 4 at least covers the light emitting diode structure 3 and exposes at least part of the first connection electrode 311A and the second connection electrode 311B. The wavelength conversion layer 4 at least partially absorbs the light emitted by the light emitting diode structure 3 and/or the transparent substrate 2 and converts the light into another wavelength range. The converted light is mixed with the light not absorbed by the wavelength conversion layer 4 to increase the light emission wavelength range of the semiconductor light emitting element 310 and improve the light emitting effect of the semiconductor light emitting element 310 . Since the semiconductor light emitting element 310 of the present embodiment has the first connection electrode 311A and the second connection electrode 311B respectively disposed on the transparent substrate 2 , the conventional LED packaging process can be omitted, and the semiconductor light emitting element 310 can be fabricated independently before Combined with a suitable bearing seat, the advantages of improving the overall manufacturing yield, simplifying the structure and increasing the application range of the matching bearing seat can be achieved.

Please refer to FIG. 11 , which is a light emitting device 11 according to an embodiment of the present invention. The light emitting device 11 includes the carrier 5 and the semiconductor light emitting device of the present invention. The transparent substrate 2 of the semiconductor light emitting device can be erected (or laid flat) on the carrier 5 and electrically coupled with the carrier 5 . There is a first included angle θ1 between the transparent substrate 2 and the bearing base 5 , and the first included angle θ1 can be fixed or changed according to the light emitting shape of the light-emitting device. The range of the first included angle θ1 is preferably between 30 degrees and 150 degrees.

Referring to FIG. 12 , the carrier 5 of the light-emitting device 11 of the present invention may further include a circuit board 6 , which is electrically coupled to a power supply. The circuit board 6 is electrically coupled to the first connecting wire and the second connecting wire (not shown in FIG. 12 ) on the transparent substrate 2 , and is electrically connected to the light-emitting diode structure 3 , so that the power supply can pass through the circuit board 6 The power required for the light-emitting diode structure 3 to emit light is provided. In other preferred embodiments of the present invention, if the circuit board 6 is not provided, the LED structure 3 can also be directly electrically connected to the carrier through the first connecting wire and the second connecting wire (not shown in FIG. 12 ). 5. The power supply can supply power to the light-emitting diode structure 3 through the carrier 5 .

Referring to FIG. 13 , the light-emitting device 11 of the present invention may further include a reflector or a filter 8 disposed on the second main surface 21B or the supporting surface 210 of the transparent substrate 2 . The mirror or filter 8 can reflect at least part of the light emitted by the light emitting diode structure 3 that penetrates the transparent substrate 2 , so that part of the reflected light is redirected to be emitted from the first main surface 21A. The reflector 8 may include at least one metal layer or a Bragg reflector, but is not limited thereto. The Bragg reflector can be composed of a stack of multiple layers of dielectric films with different refractive indices, or a stack of multiple layers of dielectric films with different refractive indices and multiple layers of metal oxides.

Please refer to FIG. 14 , the light-emitting device 11 of the present invention may further include a diamond-like carbon (DLC) film 9 , wherein the diamond-like carbon film 9 is disposed on the supporting surface 210 and/or the second main surface of the transparent substrate 2 21B to increase thermal conductivity and heat dissipation.

Please refer to Figure 15. FIG. 15 is a schematic diagram of a light-emitting device according to another preferred embodiment of the present invention. As shown in FIG. 15 , the light-emitting device 10 of the present embodiment includes a carrier 26 and the semiconductor light-emitting element of the present invention. The semiconductor light emitting device includes a transparent substrate 2 and at least one light emitting diode structure 14 . The semiconductor light emitting components can be at least partially embedded in the carrier 26 . The electrodes 30 and 32 of the carrier 26 are electrically connected to the connecting wires of the semiconductor light emitting device, so that the power supply can provide driving voltages V+ and V- correspondingly through the electrodes 30 and 32 to drive the LED structure 14 to emit light L. The light emitting diode structure 14 includes a first electrode 16 and a second electrode 18 , which are respectively electrically connected to the first connection wire 20 and the second connection wire 22 by wire bonding, but the electrical connection method is not limited thereto. In addition, the light emitting angle of the light emitting diode structure 14 is greater than 180 degrees or has a plurality of light emitting surfaces, so that the light emitting device 10 can emit light from the first main surface 21A and the second main surface 21B. Furthermore, since part of the light is emitted directly from the LED structure 14 and/or from the four sidewalls of the transparent substrate 2 , the light emitting device 10 can have multi-sided, six-sided or omnidirectional light-emitting characteristics.

The semiconductor light emitting device of the present invention further includes a wavelength conversion layer 4 selectively disposed on the light emitting diode structure 14, the first main surface 21A or the second main surface 21B. The wavelength conversion layer 4 can absorb at least part of the light emitted by the light emitting diode structure 14 and convert it into light in another wavelength range, so that the light emitting device 10 emits light with a specific color or a wider wavelength range. For example, when the light emitting diode structure 14 generates blue light, part of the blue light can be converted into yellow light by the wavelength conversion layer 4, and the light emitting device 10 can emit white light which is a mixture of blue light and yellow light. In addition, the transparent substrate 2 can be directly or indirectly fixed on the bearing base 26 in a parallel manner or a non-parallel manner. For example, by directly bonding the side wall of the transparent substrate 2 to the bearing seat 26, the transparent substrate 2 can be fixed on the bearing seat 26 upright, or the transparent substrate 2 can be horizontally arranged on the bearing seat 26, but Not limited to this. The transparent substrate 2 preferably includes a material with high thermal conductivity, whereby the heat generated by the LED structure 14 can be dissipated to the carrier 26 through the transparent substrate 2 , so the high-power LED structure can be applied to the light emitting device of the present invention. In any case, in one of the preferred embodiments of the present invention, under the condition that the light-emitting devices have the same power consumption, using a plurality of light-emitting diode structures with lower power to spread on the transparent substrate 12 can fully utilize the power of the transparent substrate 12. The thermal conduction characteristic, for example, the power of each light emitting diode structure 14 in this embodiment may be equal to or less than 0.2 watts, but not limited thereto.

Please refer to Figure 16. FIG. 16 is a schematic diagram of a light-emitting device according to another preferred embodiment of the present invention. Compared with the light-emitting device shown in FIG. 15 , the light-emitting device 10' of this embodiment includes a plurality of light-emitting diode structures 14, and at least a part of the light-emitting diode structures 14 are electrically connected to each other in series. Each light emitting diode structure 14 includes a first electrode 16 and a second electrode 18 . The first electrode 16 of one of the light emitting diode structures 14 is disposed at one end of the series and is electrically connected to the first connecting wire 20 , and the second electrode 18 of the other light emitting diode structure 14 is disposed at the other end of the series and is electrically connected to the first connecting wire 20 . The second connecting wire 22 is not limited thereto. The plurality of light emitting diode structures 14 can be electrically connected to each other in series or in parallel. The plurality of light emitting diode structures 14 can emit the same color light, for example, all of them are blue light diodes; or the plurality of light emitting diode structures 14 can respectively emit light of different colors to meet different application requirements. The light-emitting device 10' of the present invention can also emit more different color lights through the wavelength conversion layer 4.

Please refer to Figure 17. FIG. 17 is a schematic diagram of a light-emitting device according to another preferred embodiment of the present invention. Compared with the light-emitting device shown in FIG. 15 and FIG. 16 , the light-emitting device 50 of the present embodiment further includes a bracket 51 for connecting the semiconductor light-emitting device of the present invention and the carrier 26 . The transparent substrate 2 of the semiconductor light emitting device is fixed on one side of the bracket 51 by the device bonding layer 52 , and the other side of the bracket 51 can be disposed on or inserted into the carrier 26 . In addition, the bracket 51 has elasticity and can form an included angle between the transparent substrate 2 and the bearing base 26 , and the included angle is between 30-150 degrees. The material of the bracket 51 may comprise selected from aluminum, copper, composite metals, wires, ceramics, printed circuit boards or other suitable materials.

Please refer to FIG. 18 , FIG. 19 and FIG. 20 , when the transparent substrate 2 in the present invention is disposed on the carrier 5 , one of the preferred embodiments is that the transparent substrate 2 can be achieved by plugging or joining. Combination with carrier 5.

As shown in FIG. 18 , when the transparent substrate 2 is disposed on the carrier 5 , the transparent substrate 2 is inserted into the single slot 61 of the carrier 5 , so that the semiconductor light-emitting element is electrically coupled to the slot through the connecting wire 61. The light emitting diode structure (not shown in FIG. 18 ) on the transparent substrate 2 is electrically coupled to the power supply through the carrier 5 , and at least part of the conductive patterns or connecting wires on the transparent substrate 2 are extended and connected to the edge of the transparent substrate 2 , And integrated into a gold finger structure or electrical port with a plurality of conductive contacts, for example, the electrical port can be the aforementioned connection electrode 311A and connection electrode 311B (not shown in FIG. 18 ). When the transparent substrate 2 is inserted into the slot 61 , the light emitting diode structure (not shown in FIG. 18 ) can be powered by the carrier 5 , and the transparent substrate 2 can be fixed in the slot 61 of the carrier 5 correspondingly.

Please refer to FIG. 19 . FIG. 19 is a schematic structural diagram of the transparent substrate 2 being inserted into a plurality of slots of the carrier 5 . In this embodiment, the transparent substrate 2 has a double-pin structure, wherein one pin can be the positive electrode of the semiconductor light emitting device, and the other pin can be the negative electrode of the semiconductor light emitting device. Both of the two pins have at least one conductive contact piece to be used as a port respectively. Correspondingly, the carrier 5 has at least two slots 61 corresponding to the size and shape of the pin insertion surface, so that the transparent substrate 2 can be inserted into the carrier 5 smoothly, and the light-emitting diode structure can be powered.

Please refer to Figure 20. The transparent substrate 2 is bonded to the carrier 5 through the component bonding layer. During the bonding process, the transparent substrate 2 and the carrier 5 can be combined or welded together by using metal materials such as gold, tin, indium, bismuth, and silver. Alternatively, conductive silica gel or epoxy resin can also be used to fix the transparent substrate 2 on the bearing base 5 . In this way, the conductive patterns or connecting wires of the semiconductor light emitting device can be electrically connected to the carrier through the device bonding layer.

Please refer to Figure 21 and Figure 22. The carrier 5 of the light-emitting device 11 of the present invention may be a substrate, and the substrate material may include one of materials selected from aluminum, copper, aluminum-containing composite metals, wires, ceramics, or printed circuit boards. At least one bracket 62 is provided on the surface or side of the bearing base 5 . The bracket 62 and the bearing base 5 can be two parts which can be separated from each other, or can be an integrated part. The semiconductor light emitting device can be electrically coupled to the bracket 62 by bonding, and the device bonding layer 63 is used to fix the transparent substrate 2 on the carrier 5 . There is the aforementioned first angle θ1 between the carrier 5 and the transparent substrate 2 . Semiconductor light-emitting components can also be disposed on the surface of the support base 5 without the support, so as to enhance the light-emitting effect of the light-emitting device 11 . In addition, the semiconductor light-emitting device can also be connected to the bracket 62 (not shown in FIG. 21 and FIG. 22 ) by plugging, that is, by using a connector to connect the semiconductor light-emitting device and the bracket (and/or the bracket and the carrier), In order to fix the transparent substrate 2 on the carrier 5 . Because the bearing base 5 and the bracket 62 are bendable mechanical components, the flexibility of the present invention in application is increased; at the same time, the light-emitting device 11 can emit light by combining different light colors by using semiconductor light-emitting components with different light-emitting wavelengths. Variation to meet different needs.

Please refer to Figure 23. As shown in FIG. 23 , the light-emitting device of this embodiment includes at least one semiconductor light-emitting element 1 and a carrier 5 . The carrier 5 includes at least one bracket 62 and at least one circuit pattern P. One end of the transparent substrate of the semiconductor light emitting element 1 is electrically coupled to the bracket 62 to avoid or reduce the shielding effect of the bracket 62 on the light emitted by the semiconductor light emitting element 1 . The carrier 5 can be selected from materials such as aluminum, copper, aluminum-containing composite metals, wires, ceramics, or printed circuit boards. The bracket 62 can be cut from a part of the bearing base 5 and bent at an angle (the first angle θ1 shown in FIG. 21 and FIG. 22 ). The circuit pattern P is disposed on the bearing base 5 , and the circuit pattern P has at least one set of electrical terminals for being electrically connected to the power supply. Another part of the circuit pattern P extends on the bracket 62 to be electrically connected to the semiconductor light emitting element 1 , so that the semiconductor light emitting element 1 can be electrically connected to the power supply through the circuit pattern P of the carrier 5 . In addition, the carrier 5 can further include at least one hole H or at least one gap G, so that fixing elements such as screws, nails or pins can pass through the hole H or the gap G to connect the carrier 5 and other components according to the application of the light-emitting device. for further construction or installation. At the same time, the arrangement of the holes H or the gaps G also increases the heat dissipation area of the bearing base 5 and improves the heat dissipation effect of the light emitting device.

Please refer to Figure 24. FIG. 24 is a schematic perspective view of a device base of a light-emitting device according to another preferred embodiment of the present invention. As shown in FIG. 24 , the device base 322 of this embodiment includes a support base 5 and at least one bracket 62 . Compared with the embodiment of FIG. 23 , the bracket 62 of this embodiment includes at least a strip portion 342 and a notch 330 . The electrodes 30 and 32 are respectively disposed on both sides of the notch 330 , and the strip portion 342 forms at least one side wall of the notch 330 . The semiconductor light emitting device of the present invention is correspondingly disposed in the notch 330 and electrically coupled to the bracket 62 . The connecting wires of the semiconductor light emitting device are electrically connected to the electrodes 30 and 32 , so that the power supply can drive the semiconductor light emitting device through the circuit patterns on the bracket 62 and the carrier 5 . The size of the notch 330 may not be smaller than the main light emitting surface of the semiconductor light emitting element, so that the light emitted from the semiconductor light emitting element will not be shielded by the bracket 62 . The connection between the bracket 62 and the bearing base 5 can be designed to be movable, so that the angle between the bracket 62 and the bearing seat 5 can be adjusted as required.

Please refer to Figure 24 and Figure 25. FIG. 25 is a schematic perspective view of a light-emitting device according to another preferred embodiment of the present invention. Compared with the embodiment of FIG. 24 , the light-emitting device 302 shown in FIG. 25 further includes at least one bracket 62 having a plurality of notches 330 . The plurality of notches 330 are respectively disposed on two opposite sides of the bracket 62 , and the strip portion 342 at least forms one side wall of each notches 330 . The plurality of semiconductor light emitting elements 310 are correspondingly arranged with the plurality of notches 330 , and the circuit patterns or connecting electrodes (not shown in FIG. 25 ) of each semiconductor light emitting element 310 are correspondingly arranged and electrically connected to the electrodes 30 and 32 respectively. The light-emitting device 302 of this embodiment may further include a plurality of brackets 62 , and the brackets 62 are disposed between the semiconductor light-emitting element 1 and the carrier 5 . The length of the bracket 62 may be substantially between 5.8-20 millimeters (mm). The included angle between each bracket 62 provided with the semiconductor light emitting assembly and the carrier 5 can be adjusted according to needs. In other words, the included angle between the bearing seat 5 and the at least one bracket 62 may be different from the included angle between the bearing seat 5 and the other brackets 62 to achieve the desired lighting effect, but is not limited thereto. In addition, a combination of semiconductor light-emitting components with different light-emitting wavelength ranges can also be arranged on the same support or different supports, so that the color effect of the light-emitting device is more abundant.

In order to increase the brightness and improve the light-emitting effect, the light-emitting device according to another preferred embodiment of the present invention arranges a plurality of semiconductor light-emitting components with transparent substrates on the bearing seat or other bearing mechanism such as the aforementioned embodiment. The arrangement is point-symmetric or line-symmetric, that is, a plurality of semiconductor light-emitting components with transparent substrates are arranged on the carrier mechanism in a point-symmetric or line-symmetric form. Please refer to FIG. 26 , FIG. 27 , FIG. 28 , and FIG. 29 , the light-emitting device of each embodiment is provided with a plurality of semiconductor light-emitting components on the carrying mechanisms of various shapes. Because it is configured in the form of point symmetry or line symmetry, the light output of the light emitting device 11 of the present invention can be uniform (the structure of the light emitting diode is omitted). The light-emitting effect of the light-emitting device 11 can be further adjusted and improved by changing the size of the above-mentioned first included angle. As shown in FIG. 26 , the semiconductor light emitting elements are arranged at an angle of 90 degrees with each other in a point-symmetric manner. At this time, at least two semiconductor light emitting elements may face any of the four sides of the light emitting device 11 . As shown in FIG. 27 , the included angle between the semiconductor light-emitting components of the light-emitting device 11 is less than 90 degrees. As shown in FIG. 28 , the semiconductor light emitting components of the light emitting device 11 are arranged along the edge of the carrying mechanism 60 . As shown in FIG. 29 , the included angle between the semiconductor light-emitting components of the light-emitting device is greater than 90 degrees. In another preferred embodiment of the present invention (not shown in the figure), a plurality of semiconductor light emitting elements can be arranged asymmetrically, and at least a part of the plurality of semiconductor light emitting elements are arranged in a concentrated or dispersed manner, so as to achieve the light emitting device 11 in the Light shape needs for different applications.

Please refer to Figure 30. FIG. 30 is a schematic cross-sectional view of a light-emitting device according to another preferred embodiment of the present invention. As shown in FIG. 30 , the light-emitting device 301 includes a semiconductor light-emitting element 310 and a bracket 321 . The bracket 321 includes a notch 330 , and the semiconductor light-emitting element 310 is disposed corresponding to the notch 330 . In this embodiment, the outside of the bracket 321 can also be used as pins or bent to form pads required for surface welding, so as to be fixed and electrically connected to other circuit components. The light-emitting surface of the semiconductor light-emitting element 310 is disposed in the gap 330 , so the light-emitting device 301 can maintain the multi-sided or six-sided light-emitting effect regardless of whether the bracket 321 is made of a light-transmitting material.

Please refer to FIG. 31 , which is a light-emitting device according to a specific embodiment of the present invention. The light-emitting device includes a tubular lampshade 7 , at least one semiconductor light-emitting element 1 and a carrying mechanism 60 . The semiconductor light emitting assembly 1 is disposed on the carrier mechanism 60 , and at least a part of the semiconductor light emitting assembly 1 is located in the space formed by the tubular lampshade 7 . Please refer to the cross-sectional schematic diagram of FIG. 32 again. When a plurality of semiconductor light emitting elements 1 are disposed in the lampshade 7 , the first main surfaces 21A of the semiconductor light emitting elements 1 are spaced apart and arranged in a manner that is not parallel to each other. In addition, at least a part of the plurality of semiconductor light-emitting components 1 is disposed in the space formed by the lampshade 7 and does not closely adhere to the inner wall of the lampshade 7 . In a preferred embodiment, the distance D between the semiconductor light-emitting element 1 and the lampshade 7 can be equal to or greater than 500 micrometers (μm); however, the lampshade 7 can also be formed by pouring glue, and the lampshade 7 is at least partially covered and directly in contact with each other. in the semiconductor light-emitting device 1 .

Please refer to FIG. 33 , which is a schematic diagram of a semiconductor light-emitting device 1 according to a preferred embodiment of the present invention. Compared with the embodiment shown in FIG. 10 , the semiconductor light-emitting device 1 of the present embodiment includes a transparent substrate 2 and at least one light-emitting diode structure 3 , wherein the transparent substrate 2 has an extension 2e for arranging a set of connection electrodes 31 , the light-emitting diode The structure 3 is provided on the transparent substrate 2 at a position opposite to the connection electrode 31 . The set of connection electrodes 31 may include a first connection electrode 311A and a second connection electrode 311B, which are located on the same side of the semiconductor light emitting device 1 and are used to electrically connect the light emitting diode structure 3 and a power source. The first connection electrode 311A and the second connection electrode 311B can be a positive electrode and a negative electrode, respectively, and are used to electrically connect the corresponding electrodes on the support 62 or the bearing base/bearing mechanism according to the embodiments of the present invention. Therefore, the light emitting diode structure 3 and the wavelength conversion layer 4 covering the light emitting diode structure 3 can protrude from one side of the bracket 62 or the carrier. And as described in the previous embodiments of the present invention, the light emitted by the light emitting diode structure 3 can achieve multidirectional or omnidirectional illumination through the transparent substrate 2 .

Please refer to Figure 34 to Figure 36. 34 is a schematic diagram of the light-emitting device 11 according to the preferred embodiment of the present invention, FIG. 35 is a schematic view of the assembly of the bracket 62 according to the preferred embodiment of the present invention, and FIG. Schematic. As shown in FIG. 34 , the light-emitting device 11 includes a carrier 5 , at least two brackets 62 are disposed on the carrier 5 and coupled to each other, and at least two semiconductor light-emitting components 1 are coupled to the corresponding brackets 62 . At least one of the brackets 62 may have a slot 621 , and the other bracket 62 may be inserted into the slot 621 , so that the two brackets 62 can be coupled to each other through the slot 621 . In addition, as shown in FIG. 35 , the two brackets 62 can also have slots 621 respectively, so that the two brackets 62 can be coupled together through the two slots 621 being fitted with each other. The top and bottom ends of one of the brackets 62 can be aligned with the top and bottom ends of the other bracket 62 respectively, so that the two brackets 62 can be symmetrically and regularly arranged on the bearing base 5 .

The shape of at least one of the brackets 62 may be the same or similar to a plate-like or sheet-like structure, and may include two mutually parallel and flat surfaces, wherein the surface area is not smaller than that of the semiconductor light emitting device 1 . According to this embodiment, the surface area of the bracket 62 is preferably more than three times that of the semiconductor light emitting element 1 , so that the light emitting device 11 can have better heat dissipation efficiency and luminous efficacy. The plurality of semiconductor light emitting assemblies 1 can be arranged on the corresponding brackets 62 in a symmetrical manner or an asymmetrical manner. In the embodiment shown in FIG. 34 , the semiconductor light emitting assembly 1 disposed on one of the brackets 62 is aligned with the semiconductor light emitting assembly 1 disposed on the other bracket 62 . However, according to other embodiments of the present invention, the semiconductor light emitting assembly 1 disposed on one of the brackets 62 may not be aligned with the semiconductor light emitting assembly 1 disposed on the other bracket 62 , or relative to the semiconductor light emitting assembly 1 disposed on the other bracket 62 . The staggered arrangement, that is, the plurality of semiconductor light emitting components 1 arranged on different brackets 62 can also be randomly arranged in a staggered arrangement to compensate for the shadow caused by some structural units blocking the light path when emitting light. As shown in FIG. 36 , the light-emitting device 11 may include a base 64 and a lampshade 7 . The bearing base 5 is arranged on the base 64 . The lampshade 7 can be spherical or candle-shaped, used to cover the bearing base 5 and connected to the base 64 . In the embodiment shown in FIG. 36 , a plurality of semiconductor light-emitting components 1 are dispersedly arranged on a plurality of brackets 62, and each bracket 62 points in different directions, so the light-emitting device 11 with the lampshade 7 can uniformly provide omnidirectional light emission Lighting function. The light intensity of the light emitting device 11 can be changed and adjusted by increasing or decreasing the number of the semiconductor light emitting elements 1 . The bracket 62 can be made of a heat-dissipating material for dissipating the heat generated by the semiconductor light-emitting assembly 1 . The material of at least one of the brackets 62 is selected from one or a combination of materials such as printed circuit boards, ceramics, glass, plastics and the like. However, the material of the bracket 62 is preferably a metal core print circuitboard.

Please refer to FIGS. 37 and 38 , FIG. 37 is a schematic diagram of the light emitting device 11 according to another preferred embodiment of the present invention, and FIG. 38 is a schematic diagram of the combination of the bracket 62 and the support column 623 according to the preferred embodiment of the present invention. Compared with the embodiment shown in FIG. 34 , the light emitting device 11 of the embodiment shown in FIG. 37 further includes a support column 623 , and at least one bracket 62 can be coupled to the support column 623 . As shown in the figure, the post 623 may include at least one slot 623a, so that the bracket 62 can be coupled with the post 623 by being inserted into the slot 623a of the post 623 . In this embodiment, the plurality of brackets 62 can be respectively inserted into the corresponding card slots 623a and arranged around the pillars 623 in a symmetrical or asymmetrical manner, so that the light-emitting device 11 can uniformly provide a multi-directional light-emitting function.

The shape of the strut 623 may be the same as or similar to that of a catheter, that is, there is a guide hole 623 b provided on at least one end surface of the strut 623 . In the present invention, the fixing component can be protruded on the bearing base 5 , and the fixing component can be inserted into the guide hole 623 b of the pillar 623 , so that the pillar 623 is coupled with the bearing seat 5 . According to this structural design, the pillar 623 is coupled with the bearing base 5 in a detachable manner, and the pillar 623 can be easily detached from the bearing base 5 by removing the fixing component. The fixing components may be connectors, pipes, nails, latches, screws or bolts, etc., but are not limited thereto. The pillars 623 with the guide holes 623b can be used to dissipate the heat generated by the semiconductor light emitting assembly 1 to improve the operation performance of the light emitting device 11 . According to some embodiments of the present invention, a gas or liquid material can also be stored or circulated in the guide hole 623b of the pillar 623 to conduct more heat, thereby increasing the service life of the light emitting device 11 .

As shown in FIG. 38 , the support post 623 may further include at least one slot 623c disposed on at least one end surface of the support post 623 . The slot 623c is extended and connected to one end of the card slot 623a, thereby forming an open space for the bracket 62 to be inserted. The bracket 62 can move along the radial direction of the strut 623 to be snapped into the engaging slot 623a of the strut 623, or move along the axial direction of the strut 623 to move into the engaging slot 623a through the slot 623c. Therefore, the light emitting device 11 of the present invention can replace the damaged bracket 62 , or replace the bracket 62 with the failed semiconductor light emitting assembly 1 in a simple and quick assembly manner.

It should be understood that although this specification is described in terms of embodiments, not every embodiment only includes an independent technical solution, and this description in the specification is only for the sake of clarity, and those skilled in the art should take the specification as a whole, and each The technical solutions in the embodiments can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

The series of detailed descriptions listed above are only specific descriptions for the feasible embodiments of the present invention, and they are not used to limit the protection scope of the present invention. Changes should all be included within the protection scope of the present invention.

Claims (10)

1. A light-emitting device, characterized in that it comprises: a carrier having an upper surface and a lower surface opposite the upper surface; a first bracket with a slot, and the first bracket is disposed on the upper surface and does not penetrate the lower surface; a second bracket inserted into the slot; and A semiconductor light-emitting element, fixed on the first bracket, wherein the semiconductor light-emitting element comprises: LED structure; a substrate having a supporting surface, a main surface and a side surface disposed oppositely, the light emitting diode structure is disposed on the supporting surface, and the supporting surface has an area not smaller than the light emitting diode structure; and a wavelength conversion layer disposed on the support surface, the wavelength conversion layer covering the light emitting diode structure and not covering the side surface; Wherein, the first bracket and the second bracket include opaque circuit boards. 2 . The light-emitting device of claim 1 , wherein the substrate comprises an extension portion disposed on the first bracket. 3 . 3 . The light-emitting device of claim 2 , further comprising a group of connection electrodes disposed on the extension portion, and the group of connection electrodes is electrically connected to the light-emitting diode structure and the first bracket. 4 . 4 . The light-emitting device of claim 1 , further comprising a support post disposed on the bearing base, wherein one of the first bracket and the second bracket is fixed on the support post. 5 . 5 . The light-emitting device of claim 4 , wherein the support column comprises a slot, and one of the first bracket and the second bracket is fixed to the support through the slot. 6 . 6 . The light-emitting device of claim 5 , wherein the support column comprises two card slots, and the first bracket and the second bracket are respectively fixed to the support column through the card slots. 7 . 7 . The light-emitting device of claim 5 , wherein the pillar further comprises a slot disposed on an end surface of the pillar, the slot extending and connected to the card slot. 8 . 8 . The light-emitting device of claim 1 , wherein the first support has an area not smaller than that of the semiconductor light-emitting element. 9 . 9 . The light-emitting device of claim 1 , wherein the first support has an area more than three times larger than that of the semiconductor light-emitting element. 10 . 10. The light-emitting device of claim 1, wherein the light-emitting device further comprises: a base for carrying the carrier; and The lampshade is connected to the base and covers the bearing seat, the first bracket, the second bracket and the semiconductor light-emitting element.

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