CN203948978U - light emitting device - Google Patents

Abstract

The utility model provides a light-emitting device, include: a load bearing seat having a center of symmetry; the semiconductor light-emitting assemblies are arranged on the bearing seat and surround the symmetrical center; wherein at least one of the plurality of semiconductor light emitting elements comprises: a transparent substrate having a support surface and a second major surface disposed opposite to each other; and the light-emitting diode structure is arranged on the supporting surface, a first main surface capable of emitting light is formed by the light-emitting diode structure and the supporting surface which is not provided with at least one part of the light-emitting diode structure, and at least one part of light emitted by the light-emitting diode structure passes through the transparent substrate and is emitted from the second main surface. The utility model discloses a light-emitting device can send multidirection light or omnidirectionality light, and light-emitting device's luminous efficacy obtains corresponding promotion, and light-emitting diode illuminator's light shape also improves thereupon.

Description

light emitting device

technical field

The utility model relates to the field of semiconductor lighting, in particular to a light emitting device.

Background technique

The light emitted by a light emitting diode (LED) itself is a directional light source, not a divergent light source like a traditional light bulb. Therefore, the application of light-emitting diodes will be limited. For example, conventional light emitting diodes cannot or are difficult to achieve the desired lighting effects in general indoor or outdoor lighting applications. In addition, the light-emitting device of the traditional light-emitting diode can only emit light from one side, which has low luminous efficiency.

Utility model content

The purpose of the utility model is to provide a light-emitting device, which solves the technical problem that the traditional light-emitting diode light-emitting device can only emit light from one side and has low luminous efficiency.

In order to solve the above technical problems, a lighting device of the present invention includes:

a bearing seat having a center of symmetry; and

a plurality of semiconductor light-emitting components, the semiconductor light-emitting components are arranged on the carrier and surround the center of symmetry;

Wherein, at least one semiconductor light emitting component in the plurality of semiconductor light emitting components includes:

a transparent substrate having a support surface and a second major surface oppositely disposed; and

The light emitting diode structure is arranged on the support surface, and forms a first main surface that can emit light with the support surface that is not provided with at least a part of the light emitting diode structure, and at least a part of the light emitted by the light emitting diode structure passes through the a transparent substrate and emit light from the second main surface.

As a further improvement of the above light emitting device of the present invention, there is a first included angle between the bearing seat and at least one semiconductor light emitting assembly of the plurality of semiconductor light emitting assemblies, and the first included angle is between 30-150 degrees .

As a further improvement of the light-emitting device of the present invention, there is a first included angle between the bearing seat and at least one semiconductor light-emitting assembly of the plurality of semiconductor light-emitting assemblies, and the first included angle is between 60-90 degrees .

As a further improvement of the light-emitting device of the present invention, there is a first included angle between the bearing seat and at least one semiconductor light-emitting assembly of the plurality of semiconductor light-emitting assemblies, and the first included angle is equal to or close to 60 degrees .

As a further improvement of the light-emitting device of the present invention, there is a first included angle between the bearing base and at least one semiconductor light-emitting assembly of the plurality of semiconductor light-emitting assemblies, and the first included angle is equal to or close to 80 degrees .

As a further improvement of the light emitting device of the present invention, at least two semiconductor light emitting components among the plurality of semiconductor light emitting components are arranged in a non-parallel manner.

As a further improvement of the light-emitting device of the present invention, at least two semiconductor light-emitting assemblies among the plurality of semiconductor light-emitting assemblies are arranged in parallel.

As a further improvement of the light-emitting device of the present invention, the main light-emitting surface of at least one semiconductor light-emitting component among the plurality of semiconductor light-emitting components does not face the center of symmetry.

As a further improvement of the light-emitting device of the present invention, the plurality of semiconductor light-emitting components at least include a first group of light-emitting components and a second group of light-emitting components, and the distance between the first group of light-emitting components and the center of symmetry is different from the The distance between the second group of light-emitting components and the center of symmetry.

As a further improvement of the light-emitting device of the present invention, the distance between the first group of light-emitting components and the center of symmetry is 10-13.5 millimeters. the

As a further improvement of the light-emitting device of the present invention, the distance between the second group of light-emitting components and the center of symmetry is between 2-13.5 millimeters.

As a further improvement of the light-emitting device of the present invention, the plurality of semiconductor light-emitting components at least include a first group of light-emitting components and a second group of light-emitting components, and the height of the first group of light-emitting components is different from that of the second group of light-emitting components the height of.

As a further improvement of the above-mentioned light-emitting device of the present invention, the light-emitting device further includes:

A plurality of brackets are arranged between the bearing seat and at least a part of the semiconductor light emitting components in the plurality of semiconductor light emitting components.

As a further improvement of the light-emitting device of the present invention, the lengths of the plurality of brackets are between 5-20 mm.

As a further improvement of the light-emitting device of the present invention, the plurality of semiconductor light-emitting components at least include a first group of light-emitting components and a second group of light-emitting components, and the first clamp between the first group of light-emitting components and the bearing seat The angle is different from the first included angle between the second group of light-emitting components and the bearing base.

As a further improvement of the light-emitting device of the present invention, the first group of light-emitting components and the second group of light-emitting components are alternately arranged on the bearing seat.

As a further improvement of the light-emitting device of the present invention, the first group of light-emitting components and the second group of light-emitting components are alternately arranged on the bearing seat.

As a further improvement of the light-emitting device of the present invention, the first group of light-emitting components and the second group of light-emitting components are alternately arranged on the bearing seat.

As a further improvement of the light-emitting device of the present invention, the bearing seat is star-shaped or wheel-shaped.

As a further improvement of the above-mentioned light-emitting device of the present invention, the bearing seat includes at least two fins, and at least one semiconductor light-emitting component among the plurality of semiconductor light-emitting components is disposed on the fins.

As a further improvement of the light-emitting device of the present invention, the bearing seat includes a central portion and an extension portion, the extension portion extends from the central portion, and at least two semiconductor light-emitting assemblies among the plurality of semiconductor light-emitting assemblies are respectively arranged on The central portion and the extension portion.

Compared with the prior art, in the light-emitting device of the present invention, the light-emitting diode structure is fixed on the transparent substrate, and the transparent substrate allows the light emitted from the light-emitting diode structure to pass through. Therefore, the light emitting device of the present invention can emit multidirectional light or omnidirectional light, the luminous efficiency of the light emitting device is correspondingly improved, and the light shape of the LED light emitting device is also improved accordingly.

Description of drawings

FIG. 1 and FIG. 2 are structural schematic diagrams of a semiconductor light emitting component in a preferred embodiment of the present invention.

FIG. 3 , FIG. 4 and FIG. 5 are schematic diagrams of the coupling of different forms of LED structures 3 and wires in a preferred embodiment of the present invention.

FIG. 6 and FIG. 7 are schematic configuration diagrams of a wavelength conversion layer according to a preferred embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view of a semiconductor light-emitting component according to another preferred embodiment of the present invention.

FIG. 9 is a schematic cross-sectional view of a semiconductor light-emitting component according to another preferred embodiment of the present invention.

FIG. 10 is a three-dimensional schematic diagram of a semiconductor light-emitting component in another preferred embodiment of the present invention.

Fig. 11 is a schematic diagram of a bearing seat of a preferred embodiment of the present invention.

FIG. 12 is a schematic diagram of a circuit board of a preferred embodiment of the present invention.

FIG. 13 is a schematic diagram of a reflector in a preferred embodiment of the present invention.

FIG. 14 is a schematic diagram of a diamond-like carbon film in a preferred embodiment of the present invention.

Fig. 15 is a schematic diagram of another preferred embodiment of the light emitting device of the present invention.

Fig. 16 is a schematic diagram of another preferred embodiment of the light emitting device of the present invention.

Fig. 17 is a schematic diagram of another preferred embodiment of the light emitting device of the present invention.

FIG. 18 , FIG. 19 and FIG. 20 are schematic diagrams of a preferred embodiment of the present invention where the transparent substrate is plugged or bonded to the carrier.

FIG. 21 and FIG. 22 are schematic diagrams of a preferred embodiment of the present invention where the transparent substrate is bonded to the supporting seat with the bracket.

Fig. 23 is a schematic diagram of a light emitting device in another preferred embodiment of the present invention.

Fig. 24 is a schematic diagram of a device base of a light emitting device according to another preferred embodiment of the present invention.

Fig. 25 is a three-dimensional schematic diagram of a light emitting device according to another preferred embodiment of the present invention.

FIG. 26 , FIG. 27 , FIG. 28 and FIG. 29 are schematic diagrams of a preferred embodiment of the present invention in which the transparent substrate is arranged on the carrying mechanism in a point-symmetric or line-symmetric manner.

Fig. 30 is a schematic diagram of another preferred embodiment of the light emitting device of the present invention.

31 and 32 are schematic diagrams of a lampshade in a preferred embodiment of the present invention.

Fig. 33 is a schematic diagram of the light emitting device of the first embodiment of the present invention.

FIG. 34 is an illuminance diagram of the light emitting device shown in FIG. 33 .

Fig. 35 is a partial schematic view of the light emitting device of the second embodiment of the present invention.

Fig. 36 is a side view of the light emitting device of the second embodiment of the present invention.

FIG. 37 is an illumination diagram of the light emitting device shown in FIG. 35 and FIG. 36 .

FIG. 38 and FIG. 39 are partial schematic diagrams of different types of light emitting devices according to embodiments of the present invention.

Fig. 40 is an illuminance diagram of a light emitting device in a preferred embodiment of the present invention.

Detailed ways

The utility model will be described in detail below in conjunction with the specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present utility model, and the structural, method, or functional changes made by those skilled in the art according to these embodiments are all included in the protection scope of the present utility model.

Please refer to FIG. 1 and FIG. 2 . FIG. 1 and FIG. 2 are structural schematic diagrams of a semiconductor light-emitting component according to a preferred embodiment of the present invention. As shown in FIG. 1 and FIG. 2 , the semiconductor light emitting component 1 includes: a transparent substrate 2 , a supporting surface 210 , a first main surface 21A, a second main surface 21B and at least one light emitting diode structure 3 . The flat or sheet-shaped transparent substrate 2 itself has two main surfaces, one of which is a support surface 210 , on which the light-emitting diode structure 3 with light emitting function can be disposed. A light-emitting surface 34 of the light-emitting diode structure 3 not shielded by the transparent substrate 2 and a part of the supporting surface 210 not provided with the light-emitting diode structure 3 together form a first main surface 21A capable of emitting light. The other main surface of the transparent substrate 2 without the LED structure 3 is the second main surface 21B. The foregoing arrangement is also possible in reverse, and the light emitting diode structures 3 may also be disposed on both surfaces of the transparent substrate 2 . In an embodiment of the present invention, the light emitting diode structure 3 can be arranged on the supporting surface 210 of the transparent substrate 2, and correspondingly interlaced with other light emitting diode structures 3 arranged on the second main surface 21B, so that each surface of the transparent substrate 2 When the light-emitting diode structure 3 emits light, the light is not shielded by other light-emitting diode structures 3 on the other side of the transparent substrate 2, so that the luminous intensity of the semiconductor light-emitting component 1 can be correspondingly increased. The material of transparent substrate 2 such as sapphire substrate, _ceramic substrate, glass substrate, plastic or rubber substrate, _etc. , lead lanthanum zirconate titanate, gallium arsenide, zinc sulfide, zinc selenide, calcium fluoride, magnesium fluoride, silicon carbide (SiC) or chemical polymer materials, among which, a preferred embodiment of the present invention A sapphire substrate is used as the transparent substrate 2, because the sapphire substrate is generally a single crystal structure, which not only has a good light transmittance, but also has a good heat dissipation capability, which can prolong the life of the semiconductor light emitting component 1 . However, the use of traditional sapphire substrates in the utility model will have the problem of fragility. Therefore, the utility model has been verified by experiments. The transparent substrate 2 of the utility model is preferably a sapphire substrate with a thickness greater than or equal to 200 microns (μm). , so that better reliability can be achieved, and better load-carrying and light-transmitting functions can be achieved. In order to make the semiconductor light-emitting component 1 effectively emit multi-directional light, such as bidirectional or omnidirectional light, the semiconductor light-emitting component 1 of the present invention has at least one light-emitting diode structure 3, preferably with a light emitting angle greater than 180 degrees. Correspondingly, the LED structure 3 disposed on the transparent substrate 2 can emit light traveling away from the transparent substrate 2 from the light emitting surface 34 , and the LED structure 3 will also emit at least part of the light entering the transparent substrate 2 . The light entering the transparent substrate 2 not only exits from the second main surface 21B of the transparent substrate 2 , but also exits the part of the supporting surface 210 not provided with the LED structure 3 and other surfaces of the substrate 2 . The semiconductor light emitting component 1 can emit light from at least two sides, emit light from multiple directions, or emit light from all directions. In the present utility model, the area of the first main surface 21A or the area of the second main surface 21B is more than five times the total area of a light-emitting surface 34 of all light-emitting diode structures 3 arranged on the surface, which is taking into account It is a better configuration ratio based on conditions such as luminous efficiency and heat dissipation.

In addition, another preferred embodiment of the present invention is that the color temperature difference between the first main surface 21A and the second main surface 21B of the semiconductor light emitting component 1 is equal to or less than 1500K, so that the semiconductor light emitting component 1 has a more comprehensive and consistent luminous effect . In particular, when the thickness of the transparent substrate 2 is as mentioned above, and the light-emitting diode structure 3 with a wavelength range greater than or equal to 420 nanometers and/or less than or equal to 470 nanometers is used, the light of the transparent substrate 2 can penetrate The rate can be greater than or equal to 70%.

The utility model is not limited to the above-mentioned embodiments. Other preferred embodiments of the present utility model will be introduced in sequence below, and in order to facilitate the comparison of the differences between the various embodiments and simplify the description, the same symbols are used to mark the same components in each of the following embodiments, and mainly for each The differences between the embodiments will be described, and the repeated parts will not be repeated.

Please refer to FIG. 3 , FIG. 4 and FIG. 5 , in order to obtain power for light emission in the present invention, the LED structure 3 includes a first electrode 31A and a second electrode 31B. The first electrode 31A and the second electrode 31B are respectively electrically connected to the first connection wire 23A and the second connection wire 23B on the transparent substrate 2 . Among them, FIG. 3 , FIG. 4 and FIG. 5 respectively disclose different forms of coupling manners of the light emitting diode structure 3 and the wires. 3 is a horizontal light emitting diode structure. The light emitting diode structure 3 is formed on the support surface 210 of the transparent substrate 2. The first electrode 31A and the second electrode 31B are electrically coupled to the first connecting wire 23A and the first connecting wire 23A respectively by wire bonding. The second connecting wire 23B. FIG. 4 is a flip-chip LED structure 3 . The horizontal LED structure 3 is inverted and the LED structure 3 is coupled to the transparent substrate 2 through the first electrode 31A and the second electrode 31B. The first electrode 31A and the second electrode 31B are electrically coupled to the first connecting wire 23A and the second connecting wire 23B respectively by welding or bonding. As shown in FIG. 5, the first electrode 31A and the second electrode 31B are arranged on different surfaces of the LED structure 3, and the LED structure 3 is arranged in an upright manner, so that the first electrode 31A and the second electrode 31B can be welded or bonded. They are respectively connected to the first connecting wire 23A and the second connecting wire 23B.

Please refer to FIG. 6 and FIG. 7, the semiconductor light-emitting component 1 of the present invention can also include a wavelength conversion layer 4, and the wavelength conversion layer 4 is selectively disposed on the first main surface 21A and/or the second main surface 21B, or It is directly arranged on the LED structure 3 . The wavelength conversion layer 4 can directly contact the LED structure 3 , or be adjacent to the LED structure 3 at a certain distance without direct contact. The wavelength conversion layer 4 contains at least one phosphor, such as inorganic or organic phosphors such as garnet-based, sulfate-based or silicate-based phosphors. The wavelength conversion layer 4 is used to convert at least part of the light emitted by the LED structure 3 into light of another wavelength range. For example, when the LED structure 3 emits blue light, the wavelength conversion layer 4 can convert part of the blue light into yellow light, so that the semiconductor light emitting device 1 finally emits white light after the blue light and yellow light are mixed. In addition, because the light source of the first main surface 21A mainly comes from the light directly emitted by the light emitting diode structure 3, and the light source of the second main surface 21B is the light emitted by the light from the light emitting diode structure 3 passing through the transparent substrate 2, so the first main surface The light intensity (illuminance) of the surface 21A is different from the light intensity (illuminance) of the second main surface 21B. Therefore, in the semiconductor light-emitting component 1 of another preferred embodiment of the present invention, the phosphor content of the wavelength conversion layer 4 on the first main surface 21A and the second main surface 21B is configured accordingly. Preferably, the ratio of the phosphor content of the wavelength conversion layer 4 on the first main surface 21A relative to the phosphor content of the wavelength conversion layer 4 on the second main surface 21B can preferably range from 1 to 0.5 to 1 Ratio 3, or the ratio of the phosphor content of the wavelength conversion layer 4 on the second main surface 21B relative to the phosphor content of the wavelength conversion layer 4 on the first main surface 21A can preferably range from 1 to 0.5 to 1 than 3. In this way, the illuminance or light shape of the semiconductor light-emitting component 1 of the present invention can meet different application requirements, and the difference in color temperature between the first main surface 21A and the second main surface 21B of the semiconductor light-emitting component 1 can be controlled to be equal to or less than 1500K , so as to improve the wavelength conversion efficiency and luminous effect of the semiconductor light emitting component 1 .

Please refer to Figure 8. FIG. 8 is a schematic cross-sectional view of a semiconductor light-emitting component according to another preferred embodiment of the present invention. As shown in FIG. 8 , the semiconductor light-emitting component 1 of this embodiment includes a transparent substrate 2 and at least one light-emitting diode structure 14 providing multi-directional light output function. The transparent substrate 2 has a support surface 210 and a second main surface 21B disposed opposite to each other. The LED structure 14 is disposed on the supporting surface 210 of the transparent substrate 2 . The LED structure 14 includes a first electrode 16 and a second electrode 18 for electrically connecting other devices. The light-emitting surface 34 of the light-emitting diode structure 14 not shielded by the transparent substrate 2 and the part of the supporting surface 210 not provided with the light-emitting diode structure 14 jointly form the first main surface 21A.

The LED structure 14 may include a substrate 141 , an N-type semiconductor layer 142 , an active layer 143 and a P-type semiconductor layer 144 . In this embodiment, the base 141 of the LED structure 14 can be coupled to the transparent substrate 2 through the die bonding layer 28 . The light output brightness can be improved by optimizing the material properties of the chip bonding layer 28 . For example, the reflectivity of the die-bonding layer 28 is preferably between that of the base 141 and that of the transparent substrate 2 , so as to increase the light-emitting brightness of the LED structure 14 . In addition, the chip bonding layer 28 can be transparent adhesive or other suitable bonding materials. The first electrode 16 and the second electrode 18 are disposed on the other side of the LED structure 14 opposite to the chip bonding layer 28 . The first electrode 16 and the second electrode 18 are respectively electrically connected to the P-type semiconductor layer 144 and the N-type semiconductor layer 142 (the connection relationship between the second electrode 18 and the N-type semiconductor layer 142 is not shown in FIG. 8 ). The upper surface of the first electrode 16 is substantially the same level as the upper surface of the second electrode 18 . The first electrodes 16 and the second electrodes 18 may be metal electrodes, but are not limited thereto. In addition, the semiconductor light emitting component 1 further includes a first connection wire 20 , a second connection wire 22 and a wavelength conversion layer 4 . The first connecting wire 20 and the second connecting wire 22 are disposed on the transparent substrate 2 . The first connection wires 20 and the second connection wires 22 can be metal wires or other conductive patterns, but are not limited thereto. The first electrode 16 and the second electrode 18 are respectively connected to the first connection wire 20 and the second connection wire 22 by wire bonding or welding, but is not limited thereto. The wavelength conversion layer 4 is disposed on the transparent substrate 2 and covers the LED structure 14 . In addition, the wavelength conversion layer 4 may also be provided on the second main surface 21B of the transparent substrate 2 .

In addition, in this embodiment, in order to increase the amount of light emitted from the transparent substrate 2 and to make the distribution of the emitted light uniform, the surface of the transparent substrate 2 can also optionally be provided with a non-planar structure 12M. The non-planar structures 12M can be various convex or concave geometric structures, such as pyramids, cones, hemispheres or triangular prisms, and can be arranged regularly or randomly. In addition, a type of diamond-like carbon (DLC) film 25 can also be optionally provided on the surface of the transparent substrate 2 to increase heat conduction and heat dissipation effects.

Please refer to FIG. 9 . FIG. 9 is a schematic diagram of a semiconductor light emitting component according to another preferred variation embodiment of the present invention. Compared with the embodiment shown in FIG. 8 , in the semiconductor light emitting component 1 of this embodiment, the first electrode 16 , the second electrode 18 and the first die bonding layer 28A are disposed on the same surface of the light emitting diode structure 14 . The first electrode 16 and the second electrode 18 are electrically connected to the first connection wire 20 and the second connection wire 22 by means of flip-chip. Wherein, the first connection wire 20 and the second connection wire 22 can be formed by extending from the corresponding positions of the first electrode 16 and the second electrode 18 respectively. The first electrode 16 and the second electrode 18 can be electrically connected to the first connection wire 20 and the second connection wire 22 respectively through a second chip bonding layer 28B. The second chip bonding layer 28B can be conductive bumps, such as gold bumps or solder bumps, can also be conductive glue, such as silver glue, or a eutectic alloy layer, such as gold-tin (Au-Sn) alloy layer Or a low melting point (In-Bi-Sn) alloy layer, but not limited thereto. In this embodiment, the first die-bonding layer 28A may be vacant or include the wavelength conversion layer 4 .

Please refer to FIG. 10 . FIG. 10 is a three-dimensional schematic diagram of a semiconductor light emitting component according to another preferred embodiment of the present invention. As shown in FIG. 10 , the semiconductor light emitting component 310 of the present invention includes a transparent substrate 2 , at least a light emitting diode structure 3 , a first connection electrode 311A, a second connection electrode 311B and at least one wavelength conversion layer 4 . The light emitting diode structure 3 is disposed on the supporting surface 210 of the transparent substrate 2 and forms a first main surface 21A capable of emitting light. In this embodiment, the light emitting angle of the LED structure 3 is greater than 180 degrees, and at least part of the light emitted by the LED structure 3 will enter the transparent substrate 2, and at least a part of the incident light will pass from the corresponding first main surface 21A The second main surface 21B of the transparent substrate 2 emits light, and the remaining part of the incident light emits light from other surfaces of the transparent substrate 2 , so as to achieve the luminous effect of the semiconductor light emitting component 310 with omnidirectional light emission. The first connection electrodes 311A and the second connection electrodes 311B are respectively disposed on different sides or the same side of the transparent substrate 2 (not shown in FIG. 10 ). The first connection electrode 311A and the second connection electrode 311B can be the external electrodes of the chip extended by a first connection wire and a second connection wire of the semiconductor light emitting element 310 on the transparent substrate 2 respectively, so the first connection electrode 311A and the second connection electrode 311A The two connection electrodes 311B are electrically connected to the LED structure 3 correspondingly. The wavelength conversion layer 4 at least covers the LED structure 3 and exposes at least part of the first connection electrode 311A and the second connection electrode 311B. The wavelength conversion layer 4 at least partially absorbs the light emitted by the light emitting diode structure 3 and/or the transparent substrate 2, and converts it into light in another wavelength range, and then mixes with the light not absorbed by the wavelength conversion layer 4 to increase the light emission of the semiconductor The emission wavelength range of the component 310 improves the luminous effect of the semiconductor light emitting component 310 . Since the semiconductor light-emitting component 310 of this embodiment has the first connection electrode 311A and the second connection electrode 311B respectively disposed on the transparent substrate 2, the traditional packaging process of the light-emitting diode can be omitted, and the semiconductor light-emitting component 310 can be independently manufactured and then combined with a suitable The combination of bearing seats can achieve the advantages of improving the overall manufacturing yield, simplifying the structure, and increasing the design changes of the matched bearing seats.

Please refer to FIG. 11 , an embodiment of the present invention is a light emitting device 11 using at least one semiconductor light emitting component. The light emitting device 11 includes the supporting base 5 and the aforementioned semiconductor light emitting components. The transparent substrate 2 of the semiconductor light-emitting component can not only be placed flat on the carrier 5 , but also can be erected on it and coupled to the carrier 5 . There is a first included angle θ ₁ between the transparent substrate 2 and the bearing seat 5 , and the first included angle θ ₁ can be fixed or changed according to the light shape requirements of the light emitting device. The range of the first included angle _θ1 is preferably between 30 degrees and 150 degrees.

Please refer to FIG. 12 , the bearing base 5 of the light emitting device 11 of the present invention may further include a circuit board 6 , and the circuit board 6 is coupled to an external power source. The circuit board 6 is also electrically coupled to the first connecting wire and the second connecting wire (not shown in FIG. 12 ) on the transparent substrate 2, and is electrically connected to the light emitting diode structure 3, so that the external power supply supplies light through the circuit board 6 The power required for the diode structure 3 to emit light. In other preferred embodiments of the present utility model, if the circuit board 6 is not provided, the LED structure 3 can also be directly electrically connected to the supporting seat through the first connecting wire and the second connecting wire (not shown in FIG. 12 ). 5. The external power supply can supply power to the light emitting diode structure 3 via the bearing seat 5 .

Please refer to FIG. 13 , the light emitting device 11 of the present invention may further include a reflector or a filter 8 disposed on the second main surface 21B or the supporting surface 210 of the transparent substrate 2 . The reflector or filter 8 can reflect at least part of the light emitted by the LED structure 3 that passes through the transparent substrate 2 , so that part of the reflected light is emitted from the first main surface 21A instead. The reflector 8 may include at least one metal layer or a Bragg reflector, but not limited thereto. The Bragg reflector can be formed by stacking multiple layers of dielectric films with different refractive indices, or by stacking multiple layers of dielectric films with different refractive indices and multiple layers of metal oxides.

Please refer to FIG. 14 , the light-emitting device 11 of the present utility model can also include a diamond-like carbon (diamond-like carbon, DLC) film 9, wherein the diamond-like carbon film 9 is arranged on the support surface 210 and/or the second main surface of the transparent substrate 2 on the surface 21B to increase the effect of heat conduction and heat dissipation.

Please refer to Figure 15. Fig. 15 is a schematic diagram of another preferred embodiment of the light emitting device of the present invention. As shown in FIG. 15 , the light emitting device 10 of the present embodiment includes a bearing base 26 and at least one aforementioned semiconductor light emitting component. The semiconductor light emitting device includes a transparent substrate 2 and at least one light emitting diode structure 14 . The semiconductor light-emitting component can be partially embedded in the bearing seat 26 . The electrodes 30 , 32 of the supporting seat 26 are electrically connected to the connecting wires 20 , 22 of the semiconductor light emitting component. A power supply can provide driving voltages V+, V− through the electrodes 30, 32 correspondingly to drive the light emitting diode structure 14 to emit light L. The light emitting diode structure 14 includes a first electrode 16 and a second electrode 18 , which are respectively electrically connected to the first connection wire 20 and the second connection wire 22 in a wire bonding manner, but is not limited thereto. In addition, the light emitting diode structure 14 has a light emitting angle greater than 180 degrees or has multiple light emitting surfaces, so that the light emitting device 10 can emit light from the first main surface 21A and the second main surface 21B. Furthermore, since part of the light is emitted from the LED structure 14 and/or the four sidewalls of the transparent substrate 2 , the light emitting device 10 can have the characteristics of multi-sided light emission, six-sided light emission or omnidirectional light emission.

The semiconductor light emitting component may further include a wavelength conversion layer 4 selectively disposed on the light emitting diode structure 14 , the first main surface 21A or the second main surface 21B. The wavelength conversion layer 4 can absorb at least part of the light emitted by the LED structure 14 and convert it into light of another wavelength range, so that the light emitting device 10 emits light of a specific light color or a larger wavelength range. For example, when the LED structure 14 generates blue light, part of the blue light can be converted into yellow light after being irradiated on the wavelength conversion layer 4 , and the light emitting device 10 can emit white light which is a mixture of blue light and yellow light. In addition, the transparent substrate 2 can be directly or indirectly fixed on the bearing seat 26 in a parallel or non-parallel manner. For example, by fixing the sidewall of the transparent substrate 2 to the carrier 26 , the transparent substrate 2 can be vertically fixed on the carrier 26 , or the transparent substrate 2 can be horizontally arranged on the carrier 26 , but not limited thereto. The transparent substrate 2 preferably includes a material with high thermal conductivity, and the heat generated by the LED structure 14 can be dissipated to the carrier 26 through the transparent substrate 2 accordingly, so the high-power LED structure can be applied to the light emitting device of the present invention . In addition, in one of the preferred embodiments of the present utility model, under the same power condition, a plurality of light-emitting diode structures with lower power are formed on the transparent substrate 12 of the light emitting device of the present utility model, so as to fully utilize the power of the transparent substrate 12. The thermal conductivity, for example, the power of each light emitting diode structure 14 in this embodiment may be equal to or less than 0.2 watts, but not limited thereto.

Please refer to Figure 16. Fig. 16 is a schematic diagram of another preferred embodiment of the light emitting device of the present invention. Compared with the light emitting device shown in FIG. 15 , the light emitting device 10' of this embodiment includes a plurality of light emitting diode structures 14, and at least a part of the light emitting diode structures 14 are electrically connected to each other in series. Each LED structure 14 includes a first electrode 16 and a second electrode 18 . The first electrode 16 of one of the LED structures 14 is arranged at an outer end of the series and is electrically connected to the first connection wire 20, and the second electrode 18 of the other LED structure 14 is arranged at the other end of the series and is electrically connected to the first connection wire 20. connected to the second connecting wire 22, but not limited thereto. The plurality of LED structures 14 can be electrically connected to each other in series or in parallel. The plurality of LED structures 14 can emit the same color of light, for example, all of them are blue LEDs, or the plurality of LED structures 14 can emit different colors of light to meet different application requirements. The light emitting device 10' of the present utility model can also emit more kinds of different colored light through the wavelength conversion layer 4.

Please refer to Figure 17. Fig. 17 is a schematic diagram of another preferred embodiment of the light emitting device of the present invention. Compared with the light-emitting device shown in FIG. 15 and FIG. 16 , the light-emitting device 50 of this embodiment further includes a bracket 51 for connecting the semiconductor light-emitting component and the supporting base 26 . The transparent substrate 2 of the semiconductor light-emitting component is fixed on one side of the bracket 51 through a component bonding layer 52 , and the other side of the bracket 51 can be embedded or inserted into the carrier 26 . In addition, the bracket 51 is elastic and can form an included angle between the transparent substrate 2 and the bearing seat 26, and the included angle is between 30-150 degrees. The material of the bracket 51 may be selected from aluminum, copper, composite metal, wire, ceramic, printed circuit board or other suitable materials.

Please refer to Fig. 18, Fig. 19 and Fig. 20, when the transparent substrate 2 in the present invention is set on the bearing seat 5, one of the preferred embodiments can realize the transparent substrate 2 by inserting or bonding. Engagement with the bearing seat 5.

As shown in Figure 18, when the transparent substrate 2 is placed on the carrier 5, the transparent substrate 2 is plugged into a single slot 61 of the carrier 5, so that the semiconductor light-emitting component is electrically coupled to the slot 61 through the connecting wire. . The light-emitting diode structure (not shown in FIG. 18 ) on the transparent substrate 2 is electrically coupled to the power supply through the bearing seat 5, and at least part of the conductive patterns or connecting wires on the transparent substrate 2 are extended and connected to the edge of the transparent substrate 2, and integrated It is a golden finger structure or an electrical port with a plurality of conductive contacts, for example, the electrical port can be the aforementioned connection electrode 311A and connection electrode 311B (not shown in FIG. 18 ). When the transparent substrate 2 is plugged into the slot 61 , the light emitting diode structure (not shown in FIG. 18 ) can be powered through the carrier 5 , and the transparent substrate 2 can be fixed in the slot 61 of the carrier 5 accordingly.

Please refer to FIG. 19 . FIG. 19 is a structural schematic view of the transparent substrate 2 plugged into multiple slots of the carrier 5 . In this embodiment, the transparent substrate 2 has a double-pin structure, one of which is the anode of the chip of the semiconductor light-emitting component, and the other pin is the cathode of the chip of the semiconductor light-emitting component. Each of the two pins has at least one conductive contact as a port respectively. Correspondingly, the bearing seat 5 has at least two slots 61 matching the size of the pin insertion surface, so that the transparent substrate 2 can be smoothly connected to the bearing seat 5 and the LED structure can be powered.

Please refer to Figure 20. The transparent substrate 2 is bonded to the carrier 5 through the component bonding layer. During the bonding process, metal materials such as gold, tin, indium, bismuth, and silver can be used as soldering aids to bond the transparent substrate 2 and the carrier 5 . Alternatively, conductive silicone or epoxy resin can also be used to assist in fixing the transparent substrate 2 on the carrier 5, so that the conductive patterns or connecting wires of the semiconductor light-emitting component can be electrically connected to the carrier through the component bonding layer.

Please refer to Figure 21 and Figure 22. The carrier 5 of the light emitting device 11 of this embodiment can be a substrate, and the substrate material can be selected from aluminum, copper, composite metal containing aluminum, wires, ceramics, or printed circuit boards. The surface or side of the bearing base 5 has at least one bracket 62 . The bracket 62 is two mechanical components separated from the bearing seat 5, or an integrated mechanical component. The semiconductor light-emitting component can be coupled with the bracket 62 by bonding, that is, the transparent substrate 2 is fixed to the supporting seat 5 through the component bonding layer 63 . There is a first included angle θ ₁ as mentioned above between the bearing seat 5 and the transparent substrate 2 . Semiconductor light-emitting components can also be provided on the surface of the bearing seat 5 without supports, so as to enhance the light-emitting effect of the light-emitting device 11 . In addition, the semiconductor light-emitting component can also be connected to the bracket 62 (not shown in FIG. 21 and FIG. 22 ) by plugging, that is, the semiconductor light-emitting component and the bracket (and/or the bracket and the bearing seat) are combined through a connector, so that the transparent substrate 2 is fixed on the bearing seat 5. Because the bearing seat 5 and the bracket 62 are bendable mechanical components, the flexibility of the utility model in application is increased. At the same time, different light colors can be combined by using semiconductor light-emitting components with different light-emitting wavelengths, so that the light output of the light-emitting device 11 can be varied to meet different needs.

Please refer to Figure 23. As shown in FIG. 23 , the light emitting device of this embodiment includes at least one semiconductor light emitting component 1 and a carrier 5 . The bearing base 5 includes at least one bracket 62 and at least one circuit pattern P. As shown in FIG. One end of the transparent substrate of the semiconductor light-emitting component 1 is coupled to the support 62 to avoid or reduce the shielding effect of the support 62 on the light emitted by the semiconductor light-emitting component 1 . The material of the bearing seat 5 may include materials selected from aluminum, copper, aluminum-containing composite metal, electric wire, ceramic or printed circuit board. The bracket 62 is formed by cutting a part of the bearing base 5 and bending it at an angle (the first included angle θ ₁ shown in FIG. 21 and FIG. 22 ). The circuit pattern P is disposed on the bearing seat 5 , and the circuit pattern P has at least one set of electrical terminals for electrically connecting to a power source. Another part of the circuit pattern P extends on the bracket 62 to electrically connect the semiconductor light emitting component 1 , so that the semiconductor light emitting component 1 can be electrically connected to the power supply through the circuit pattern P of the carrier 5 . In addition, the bearing seat 5 may also include at least one hole H or at least one notch G, so that fixing members such as screws, nails or bolts, etc. further build or install. At the same time, the setting of the holes H or the gaps G also increases the heat dissipation area of the bearing seat 5 and improves the heat dissipation effect of the light emitting device.

Please refer to Figure 24. Fig. 24 is a three-dimensional schematic diagram of a device base of a light emitting device according to another preferred embodiment of the present invention. As shown in FIG. 24 , the device base 322 of this embodiment includes a bearing base 5 and at least one bracket 62 . Compared with the embodiment of FIG. 23 , the bracket 62 of this embodiment includes at least a strip portion 342 and a notch 330 . The electrodes 30 and 32 are respectively disposed on two sides of the notch 330 , and the strip portion 342 constitutes at least one side wall of the notch 330 . The semiconductor light emitting assembly of the present invention is coupled with the bracket 62 through the corresponding notch 330 . The connecting wires of the semiconductor light-emitting component are electrically connected to the electrodes 30 and 32, so that the semiconductor light-emitting component can be electrically coupled with a power source through the support 62 and the circuit pattern on the bearing seat 5 to be driven. The size of the notch 330 may not be smaller than the main light-emitting surface of the semiconductor light-emitting component, so that the light emitted by the semiconductor light-emitting component will not be blocked by the bracket 62 . The connection between the bracket 62 and the bearing base 5 can be designed to be movable, so that the angle between the bracket 62 and the bearing base 5 can be adjusted as required.

Please refer to Figure 24 and Figure 25. Fig. 25 is a three-dimensional schematic diagram of a light emitting device according to another preferred embodiment of the present invention. Compared with the embodiment in FIG. 24 , the light emitting device 302 shown in FIG. 25 further includes at least one bracket 62 with a plurality of notches 330 . A plurality of notches 330 are respectively disposed on two opposite sides of the bracket 62 , and the strip portion 342 forms at least one side wall of each notch 330 . A plurality of semiconductor light emitting elements 310 are arranged corresponding to a plurality of notches 330 , and circuit patterns or connection electrodes (not shown in FIG. 25 ) of each semiconductor light emitting element 310 are respectively arranged corresponding to electrodes 30 and electrodes 32 and electrically connected. The light emitting device 302 of this embodiment may further include a plurality of brackets 62 , and the brackets 62 are arranged between the semiconductor light emitting component 1 and the bearing seat 5 . The length of the scaffold 62 may be substantially between 5.8-20 microns (μm). The angle between each bracket 62 provided with semiconductor light emitting components and the bearing seat 5 can be adjusted individually as required. In other words, the included angle between the bearing base 5 and at least one bracket 62 may be different from the angle between the bearing base 5 and other brackets 62 to achieve a desired lighting effect, but it is not limited thereto. In addition, a combination of semiconductor light-emitting components with different light-emitting wavelength ranges can also be arranged on the same bracket or different brackets, so that the color effect of the light-emitting device is richer.

In order to increase the brightness and improve the luminous effect, the light-emitting device of another preferred embodiment of the present invention arranges a plurality of semiconductor light-emitting components with transparent substrates on the bearing seat or other bearing mechanism such as the above-mentioned embodiment at the same time. Arrangement can be arranged in point symmetry or line symmetry, that is, multiple semiconductor light emitting components with transparent substrates are arranged on the carrying mechanism in point symmetry or line symmetry. Please refer to the top views of the light emitting device 11 in Fig. 26, Fig. 27, Fig. 28 and Fig. 29, the light emitting device 11 of each embodiment is provided with a plurality of semiconductor light emitting components on the supporting mechanism 60 of various shapes, and is symmetrical in point or line The configuration in the form makes the light output of the light emitting device 11 of the present utility model uniform (the structure of the light emitting diode is omitted for illustration). The light emitting effect of the light emitting device 11 can also be further adjusted and improved by changing the size of the above-mentioned first included angle. As shown in FIG. 26 , the semiconductor light-emitting components are arranged in a point-symmetric manner with an angle of 90 degrees. At this time, at least two semiconductor light-emitting components are facing the light-emitting device 11 from any of the four sides of the light-emitting device 11 . As shown in FIG. 27 , the angle between the semiconductor light emitting components of the light emitting device 11 is less than 90 degrees. As shown in FIG. 28 , the semiconductor light emitting components of the light emitting device 11 are arranged along the edge of the carrying mechanism 60 . As shown in FIG. 29 , the angle between the semiconductor light emitting components of the light emitting device is greater than 90 degrees. In another preferred embodiment of the present utility model (not shown in the figure), a plurality of semiconductor light-emitting components can be arranged in an asymmetric manner, and at least a part of the plurality of semiconductor light-emitting components will be concentrated or dispersed to achieve a light-emitting device 11 Light shape needs in different applications.

Please refer to Figure 30. FIG. 30 is a schematic cross-sectional view of a light emitting device according to another preferred embodiment of the present invention. As shown in FIG. 30 , the light emitting device 301 includes a semiconductor light emitting component 310 and a bracket 321 . The bracket 321 includes a notch 330 , and the semiconductor light emitting element 310 is disposed corresponding to the notch 330 . In this embodiment, the outside of the bracket 321 can also be used as pins or bent into required pads for surface welding, so as to be fixed and/or electrically connected to other circuit components. A light-emitting surface of the semiconductor light-emitting component 310 is disposed in the gap 330 , and the light-emitting device 301 can maintain the luminous effect of multi-sided or six-sided light regardless of whether the bracket 321 is made of a light-transmitting material.

Please refer to FIG. 31 , which is a light emitting device according to a specific embodiment of the present invention. The light emitting device includes a tubular lampshade 7 , at least one semiconductor light emitting component 1 and a carrying mechanism 60 . The semiconductor light emitting assembly 1 is arranged on the carrying mechanism 60 , and at least a part of the semiconductor light emitting assembly 1 is located in the space formed by the tubular lampshade 7 . Please refer to the cross-sectional diagram of FIG. 32 again. When a plurality of semiconductor light emitting components 1 are arranged inside the lampshade 7 , the first main surfaces 21A of the semiconductor light emitting components 1 are separated and arranged in a manner not to be parallel to each other. In addition, at least a part of the plurality of semiconductor light-emitting components 1 is disposed in the space formed by the lampshade 7 and does not cling to the inner wall of the lampshade 7 . In a preferred embodiment, the distance D between the semiconductor light-emitting component 1 and the lampshade 7 can be equal to or greater than 500 micrometers (μm), but the lampshade 7 can also be formed by pouring glue, and the lampshade 7 can at least partially cover and directly contact In the semiconductor light emitting component 1.

Please refer to FIG. 23 and FIG. 33 . FIG. 33 is a schematic diagram of a light emitting device 11 according to another embodiment of the present invention. One of the differences between the embodiment in FIG. 23 and the embodiment in FIG. 33 is that the number of semiconductor light emitting components 1 in the embodiment in FIG. Any light-emitting component 1 of the plurality of light-emitting components 1 may include at least one main light-emitting surface facing the symmetrical center of the bearing seat 5 . In several embodiments of the present invention, the number of semiconductor light-emitting components 1 with at least one main light-emitting surface facing the symmetrical center of the bearing seat 5 can be at least two. There is at least a first included angle θ ₁ between the corresponding semiconductor light emitting component 1 and the bearing seat 5 , and the range of the first included angle θ ₁ is substantially 30-150 degrees. The light emitting device 11 of this embodiment may further include a candle-shaped lampshade 7 completely covering the semiconductor light emitting component 1 , the bracket 62 and the bearing seat 5 . Because when the angle of the first included angle θ ₁ is equal to or close to 90 degrees, the light emitting device 11 may thus produce uneven light, so in other embodiments, the angle of the first included angle θ ₁ is preferably equal to or close to 60 degrees. degrees or 80 degrees, this angle can be changed correspondingly as the distance between the semiconductor light emitting component 1 and the lampshade 7 changes. Please refer to FIG. 34 for the illuminance diagram of the light emitting device 11 of this embodiment.

Because the light distribution of the light-emitting device 11 in the above-mentioned embodiments shown in FIG. 33 and FIG. 34 is not uniform enough, the present invention further proposes an embodiment with a better improvement scheme. Please refer to Figure 35 and Figure 36. FIG. 35 is a partial schematic view of a light emitting device 11 according to another embodiment of the present invention, and FIG. 36 is a corresponding side view of the light emitting device 11 . The light emitting device 11 of this embodiment may include at least two brackets 62 and at least two semiconductor light emitting components 1 . The two brackets 62 turn relative to the bearing base 5 and do not face the symmetrical center 5 a of the bearing base 5 . The two semiconductor light emitting assemblies 1 are respectively arranged on the corresponding supports 62 and around the center of symmetry 5a. The main light-emitting surface of the light-emitting component 1 may not face the symmetrical center 5 a of the bearing seat 5 . The bearing seat 5 can be star-shaped or wheel-shaped. The bearing base 5 may include at least two fins, and the bracket 62 may extend from one side of the fins. In this way, the plurality of semiconductor light-emitting components 1 arranged on the brackets 62 can be arranged more closely, and the light output intensity of the light-emitting device 11 can be enhanced, which is also one of the advantages of the present invention. The light emitting device 11 of this embodiment may further include a candle-shaped lampshade 7 completely covering the semiconductor light emitting component 1 , the bracket 62 and the bearing seat 5 . Taking this embodiment as an example, when the number of semiconductor light-emitting components 1 is three, the height of the lampshade 7 can be equal to or close to 51.39 mm, and the inner diameter of the bottom of the lampshade 7 can be equal to or close to 34.92 mm. The distance between the centers of symmetry 5 a may be 2-3 mm, and the length of the bracket 62 may be 5-15 mm. As mentioned above, in a preferred embodiment, the first included angle θ ₁ is preferably set to be equal to or close to 80 degrees, and the length of the bracket 62 is preferably set to be equal to or close to 13.6 mm. As shown in the illuminance diagram of FIG. 37 , the light distribution of the light emitting device 11 of this preferred embodiment is more uniform than that of the previous embodiments shown in FIGS. 33 and 34 . The light emitted by each semiconductor light emitting element 1 of this embodiment can compensate for the shadow area, and the light is evenly distributed in all areas of the lampshade 7 without dark areas. The utility model proposes another preferred embodiment that can achieve the above-mentioned lighting effects. The first included angle θ ₁ is preferably set to be equal to or close to 80 degrees, and the length of the bracket 62 is preferably set to be equal to Or close to 15 millimeters, and the distance between the bracket 62 and the center of symmetry 5 a of the bearing seat 5 is preferably set to be equal to or close to 2 millimeters.

In one embodiment of the present invention, the light-emitting device 11 may include at least two semiconductor light-emitting components 1 disposed on the bearing seat 5 , wherein the main light-emitting surface of at least one semiconductor light-emitting component 1 does not face the symmetry of the bearing seat 5 . center. At least one of the plurality of semiconductor light emitting components 1 of the light emitting device 11 may further include at least one main light emitting surface facing the symmetrical center of the bearing seat 5 . In this way, the light output by different semiconductor light-emitting components 1 can be projected and pass through the surrounding lampshade 7, and the shadow of the light-emitting device 11 of the present invention when emitting light can be compensated. However, in other different application forms, at least two semiconductor light emitting components 1 can also be selectively arranged in a parallel or non-parallel manner.

In addition to the aforesaid several embodiments, the present invention further proposes several other embodiments for uniformly emitting light from the light emitting device 11 . See Figures 38 to 40. FIG. 38 and FIG. 39 are respectively schematic diagrams of parts of different types of light emitting devices 11 according to embodiments of the present invention. FIG. 40 is an illuminance diagram of one of the light emitting devices 11 of the preferred embodiment in the following detailed description. The light-emitting device 11 shown in FIG. 25, FIG. 38 or FIG. 39 may include a bearing seat 5 with a first group of brackets 62 and a second group of brackets 62, and a bearing seat 5 with a first group of light-emitting components 1a and a second group of light-emitting components 1b. Semiconductor light emitting component 1. The first group of light-emitting components 1 a and the second group of light-emitting components 1 b are respectively disposed on the first group bracket 62 and the second group bracket 62 . The first group of brackets 62 and the second group of brackets 62 can be alternately arranged on the bearing seat 5 . The number of brackets 62 of the first group may be the same as or different from the number of brackets 62 of the second group. The bearing seat 5 may have a center of symmetry. As shown in FIG. 25 or FIG. 38, in an embodiment that can uniformly emit light from the light-emitting device 11 of the present invention, the first angle _θ1 between the first group of light-emitting components 1a and the bearing seat 5 can be different from that of the second group of light-emitting components 1a. The first angle θ ₁ between the optical component 1b and the bearing seat 5 . In another embodiment that can uniformly emit light from the light-emitting device 11 of the present invention, the length of the first group of brackets 62 can be different from the length of the second group of brackets 62, as shown in Figure 38 or Figure 39 as an example, the first group of brackets 62 is higher than the brackets 62 of the second group, so that the height of the first group of light-emitting components 1a can be different from the height of the second group of light-emitting components 1b. In yet another embodiment that can uniformly emit light from the light-emitting device 11 of the present invention, the distance between the first group of brackets 62 and the center of symmetry can be different from the distance between the second group of brackets 62 and the center of symmetry, for example, as shown in Figure 39 As shown, the distance between the first group of brackets 62 and the center of symmetry may be greater than the distance between the second group of brackets 62 and the center of symmetry.

Taking one of the preferred embodiments of the present invention as an example, as shown in FIG. 38, when the number of the first group of light-emitting components 1a and the number of the second group of light-emitting components 1b of the semiconductor light-emitting component 1 are the same and both are four, the carrying The diameter of seat 5 can be between 21-25 millimeters, the first included angle _θ1 between the first group of light-emitting components 1a and bearing seat 5 can be between 30-150 degrees, and the second group of light-emitting components 1b and bearing seat The first included angle _θ1 between 5 can be between 30-150 degrees, the length of the first group of brackets 62 can be between 10-20 mm, and the length of the second group of brackets 62 can be between 12-17 mm. According to the foregoing, its preferred implementation includes: the diameter of the bearing seat 5 is preferably the same or close to 21 millimeters, and the first angle _θ1 between the first group of light-emitting components 1a and the bearing seat 5 is preferably the same as The first angle θ ₁ between the second group of light-emitting components 1b and the bearing seat 5 is equal to or close to 80 degrees, and the length of the first group of brackets ₆₂ is preferably equal to or close to 15 mm. The length of the bracket 62 is preferably equal to or close to 12 mm.

According to one of the preferred embodiments, the light emitting device 11 may further include a spherical lampshade 7, as shown in FIG. 39 . The bearing seat 5 of the light emitting device 11 may further include a central portion and an extension portion, and the extension portion extends from the central portion. Different groups of brackets 62 may respectively extend on one side of the central portion and one side of the extension portion. Taking another preferred embodiment shown in Figure 39 as an example, when the number of semiconductor light-emitting components 1 in the first group and the second group is the same and equal to four, the outer diameter of the lampshade 7 is equal to or close to 60 mm, and the lampshade 7 The inner diameter of the bottom is equal to or close to 32mm, the first included angle _θ1 between the first group of light-emitting components 1a and the bearing seat 5 can be between 30-150 degrees, and the distance between the second group of light-emitting components 1b and the bearing seat 5 The first angle _θ1 between them can be between 30-150 degrees, the distance between the first group of supports 62 and the center of symmetry of the bearing seat 5 can be between 10-13.5 millimeters, the symmetry of the second group of supports 62 and the bearing seat 5 The distance between the centers may be 2-13.5 mm, the length of the first group of stents 62 may be 5-16 mm, and the length of the second group of stents 62 may be 5-20 mm. According to the foregoing, its preferred embodiment includes: the first angle _θ1 between the first group of light-emitting components 1a and the bearing seat 5 is preferably equal to or close to 80 degrees, and the second group of light-emitting components 1b and the bearing The first included angle _θ1 between the seats 5 is preferably equal to or close to 60 degrees, the length of the first group of brackets 62 is preferably equal to or close to 15.8 mm, and the length of the second group of brackets 62 is preferably equal to or close to Close to 5.8 mm, the distance between the first group of brackets 62 and the center of symmetry of the bearing seat 5 is preferably equal to or close to 12 mm, and the distance between the second group of brackets 62 and the center of symmetry of the bearing seat 5 is preferably equal to or close to 5mm. The illuminance diagram of the light emitting device 11 in this preferred embodiment is shown in FIG. 40 , the shadows of the light emitting device 11 are reduced, so that the light emitting device 11 emits light more uniformly.

In addition, from the top view of the light emitting device 11, the card-shaped, strip-shaped or stick-shaped semiconductor light-emitting components 1 can be arranged on the supporting seat 5 and can be arranged in V-shaped, U-shaped, triangular and polygonal shapes, Its arrangement is applicable to all the foregoing embodiments of the present utility model. The utility model can be applied to fields such as light bulbs, lamp tubes, advertising billboards, etc. The light emitting device of the utility model has economic benefits and practical value because of its advantages of good luminous effect, low power consumption and uniform light output.

To sum up, in the light emitting device of the present invention, the light emitting diode structure is fixed on the transparent substrate, and the transparent substrate allows the light emitted from the light emitting diode structure to pass through. Therefore, the light emitting device of the present invention can emit multidirectional light or omnidirectional light, the luminous efficiency of the light emitting device is correspondingly improved, and the light shape of the LED light emitting device is also improved accordingly.

It should be understood that although the description is described according to the embodiments, not each embodiment only includes an independent technical solution, and this description of the description is only for clarity, and those skilled in the art should take the description as a whole, and each The technical solutions in the embodiments can also be properly combined to form other embodiments that can be understood by those skilled in the art.

A series of detailed descriptions listed above are only specific descriptions for the feasible embodiments of the present utility model, and they are not intended to limit the scope of protection of the present utility model. Embodiments or changes should be included within the protection scope of the present utility model.

Claims (21)

1. A lighting device, characterized in that, comprising: a bearing seat having a center of symmetry; and a plurality of semiconductor light-emitting components, the semiconductor light-emitting components are arranged on the carrier and surround the center of symmetry; Wherein, at least one semiconductor light emitting component in the plurality of semiconductor light emitting components includes: a transparent substrate having a support surface and a second major surface oppositely disposed; and The light emitting diode structure is arranged on the support surface, and forms a first main surface that can emit light with the support surface that is not provided with at least a part of the light emitting diode structure, and at least a part of the light emitted by the light emitting diode structure passes through the a transparent substrate and emit light from the second main surface. 2. The light emitting device according to claim 1, characterized in that there is a first angle between the bearing base and at least one semiconductor light emitting component in the plurality of semiconductor light emitting components, and the first included angle is between Between 30-150 degrees. 3. The light emitting device according to claim 1, characterized in that there is a first angle between the bearing base and at least one semiconductor light emitting component in the plurality of semiconductor light emitting components, and the first included angle is between At 60-90 degrees. 4. The light emitting device according to claim 1, characterized in that there is a first angle between the bearing seat and at least one semiconductor light emitting component in the plurality of semiconductor light emitting components, and the first angle is equal to or close to 60 degrees. 5. The light-emitting device according to claim 1, wherein there is a first angle between the bearing base and at least one semiconductor light-emitting component of the plurality of semiconductor light-emitting components, and the first angle is equal to or close to 80 degrees. 6 . The light emitting device according to claim 1 , wherein at least two semiconductor light emitting components among the plurality of semiconductor light emitting components are arranged in a non-parallel manner. 7. The light emitting device according to claim 1, wherein at least two semiconductor light emitting components among the plurality of semiconductor light emitting components are arranged in parallel. 8 . The light emitting device according to claim 1 , wherein the main light emitting surface of at least one semiconductor light emitting component in the plurality of semiconductor light emitting components does not face the center of symmetry. 9. The light-emitting device according to claim 1, wherein the plurality of semiconductor light-emitting components at least comprise a first group of light-emitting components and a second group of light-emitting components, and the distance between the first group of light-emitting components and the center of symmetry is The distance is different from the distance between the second group of light-emitting components and the center of symmetry. 10 . The light emitting device according to claim 9 , wherein the distance between the first group of light emitting components and the center of symmetry is 10-13.5 mm. 11 . The light emitting device according to claim 9 , wherein the distance between the second group of light emitting components and the center of symmetry is between 2 mm and 13.5 mm. 12. The light-emitting device according to claim 1, wherein the plurality of semiconductor light-emitting components at least comprise a first group of light-emitting components and a second group of light-emitting components, and the height of the first group of light-emitting components is different from that of the The height of the second group of light emitting components. 13. The lighting device according to claim 1, further comprising: A plurality of brackets are arranged between the bearing seat and at least a part of the semiconductor light emitting components in the plurality of semiconductor light emitting components. 14 . The light emitting device according to claim 13 , wherein the lengths of the plurality of supports are between 5 mm and 20 mm. 15. The light-emitting device according to claim 1, wherein the plurality of semiconductor light-emitting components at least include a first group of light-emitting components and a second group of light-emitting components, and the distance between the first group of light-emitting components and the bearing seat The first angle between them is different from the first angle between the second group of light-emitting components and the bearing seat. 16 . The light emitting device according to claim 9 , wherein the first group of light emitting components and the second group of light emitting components are alternately arranged on the supporting seat. 17. The light emitting device according to claim 12, wherein the first group of light emitting components and the second group of light emitting components are alternately arranged on the supporting base. 18 . The light emitting device according to claim 15 , wherein the first group of light emitting components and the second group of light emitting components are alternately arranged on the supporting seat. 19. The light emitting device according to claim 1, wherein the bearing seat is star-shaped or wheel-shaped. 20 . The light emitting device according to claim 1 , wherein the bearing seat comprises at least two fins, and at least one semiconductor light emitting component among the plurality of semiconductor light emitting components is disposed on the fins. 21 . 21. The light-emitting device according to claim 1, wherein the bearing base comprises a central portion and an extension portion, the extension portion extends from the central portion, and at least two of the plurality of semiconductor light-emitting components The light emitting components are respectively arranged on the central part and the extension part.