CN107195764A - dodging device and preparation method thereof - Google Patents

Abstract

The invention discloses a uniform light device and a preparation method thereof. The uniform light device comprises: a first electrode plate, a second electrode plate, a third electrode plate, a fourth electrode plate, a base and a liquid lens, and the base is provided with a first One electrode plate, the second electrode plate, the third electrode plate and the fourth electrode plate, the first electrode plate and the second electrode plate form the first group of parallel plate capacitors, the third electrode plate and the fourth electrode plate form the second group of parallel plate capacitors A plate capacitor, the bottom of the liquid lens is embedded on the substrate and the liquid lens is located between the first set of parallel plate capacitors and the second set of parallel plate capacitors. Preparation method: photoresist patterning on the substrate; sputtering ZnO layer; growing ZnO nanostructure in water bath; fluorine surface treatment; residual photoresist removal; sensor packaging. The invention can convert uneven light intensity distribution into uniform light intensity distribution by means of liquid lens vibration, and has the advantages of strong adjustability, sustainable utilization and the like.

Description

Uniform light device and preparation method thereof

technical field

The invention relates to the field of uniform light for LEDs and LDs, in particular to a light uniform device and a preparation method thereof.

Background technique

With the rapid development of semiconductor light-emitting materials and processes, LEDs are gradually replacing traditional light sources as a new generation of light sources, and are widely used in projection lamps and automobile headlights. Although LEDs have the advantages of high efficiency and environmental protection, their emitted light intensity has a roughly cosine distribution. If such a spatial light intensity distribution is directly applied without proper optical system processing, it will be difficult to meet the performance indicators required by the device or lamp in most cases, and at the same time, the efficiency will be reduced due to the existence of a large amount of ineffective light. The secondary optical design for LED can effectively modulate the light distribution characteristics of LED light source.

In actual lighting, projection lamps, reading lamps, and indoor lighting all require uniform lighting. There are only two methods to achieve uniform lighting: overlapping method and clipping method. The overlapping method subdivides the light emitted by the light source into multiple parts. Then overlap each other on the illuminated area to eliminate the inhomogeneity of the overall light beam of the light source, such as compound eye illumination, light pipe illumination and microlens array illumination, etc. The clipping method is based on the light intensity distribution of the known light source, and controls the direction of the wavefront by clipping the mirror or lens surface shape to achieve uniform energy or intensity distribution. However, these methods are not only cumbersome and expensive to manufacture, but also the optical performance index of the optical element cannot be changed after it is produced.

Contents of the invention

The technical problem mainly solved by the present invention is to provide a uniform light device and a preparation method thereof, which are simple to manufacture, low in cost, and have the advantages of strong adjustability and sustainable utilization.

In order to solve the above technical problems, a technical solution adopted by the present invention is to provide a uniform light device, including: a first electrode plate, a second electrode plate, a third electrode plate, a fourth electrode plate, a base and a liquid lens, the base The first electrode plate, the second electrode plate, the third electrode plate and the fourth electrode plate are arranged on it, the first electrode plate and the second electrode plate form the first group of parallel plate capacitors, and the third electrode plate and the fourth electrode plate form For the second group of parallel plate capacitors, the bottom of the liquid lens is embedded on the substrate and the liquid lens is located between the first group of parallel plate capacitors and the second group of parallel plate capacitors.

In a preferred embodiment of the present invention, the substrate is a silicon wafer, quartz glass or K9 glass.

In a preferred embodiment of the present invention, the liquid in the liquid lens is glycerol or simethicone.

In a preferred embodiment of the present invention, the substrate is provided with a hydrophilic-hydrophobic surface spaced apart from each other.

In a preferred embodiment of the present invention, the bottom of the liquid lens is embedded in the hydrophilic part of the substrate.

In order to solve the above-mentioned technical problems, another technical solution adopted by the present invention is to provide a method for preparing a uniform light device, comprising the following steps:

(1) Photoresist patterning on the substrate: After the substrate is cleaned, the photoresist patterning layer is produced on the substrate by the photolithography process of uniform coating, pre-baking, exposure, middle baking, development and post-baking;

(2) Sputtering ZnO layer: use a sputtering machine to sputter a ZnO seed layer on the surface of the photoresist patterned layer;

(3) Growth of ZnO nanostructures in a water bath: use water bath heating method to grow ZnO nanostructures in a water bath heating furnace;

(4) Fluorine surface treatment: immerse in the surface treatment solution, dry it with high-purity _N2 , and bake it in a vacuum heating furnace;

(5) Residual photoresist removal: immerse the substrate after fluorine surface treatment in an organic solvent to dissolve the residual photoresist, thereby obtaining a hydrophilic and hydrophobic surface separated by hydrophilic and hydrophobic phases;

(6) Sensor packaging: a liquid lens is set on the above-mentioned hydrophilic and hydrophobic surface, and the first electrode plate, the second electrode plate, the third electrode plate and the fourth electrode plate are set on the periphery of the base, the first electrode plate and the second electrode plate The two electrode plates form the first group of parallel plate capacitors, the third electrode plate and the fourth electrode plate form the second group of parallel plate capacitors, the bottom of the liquid lens is embedded on the substrate, and the liquid lens is located between the first group of parallel plate capacitors and the second group of parallel plate capacitors. Between two sets of parallel plate capacitors.

In a preferred embodiment of the present invention, the specific steps of patterning the photoresist on the substrate in step (1) are: after the substrate is cleaned, spread the glue on the substrate with a thickness of 1.5-3 μm; pre-baking at 85-95 °C 55~65s; after natural cooling, exposure under a contact UV exposure lithography machine for 7~8s; 105~115°C medium baking for 2~3min; after natural cooling, use NaOH with a mass percentage concentration of 5‰ for 30~40s ; Bake at 105~115°C for 2~3 minutes, then cool naturally.

In a preferred embodiment of the present invention, the sputtering thickness of the ZnO seed layer in step (2) is 50 nm to 80 nm.

In a preferred embodiment of the present invention, the specific steps of step (3) growing ZnO nanostructures in a water bath are: using a water bath heating method, in a water bath heating furnace, the substrate with a ZnO seed layer on the surface and the bottom of the water bath heating furnace The surface is at an angle of 70°~80°, and a mixture of zinc nitrate hexahydrate solution and hexamethylenetetramine solution with a concentration of 30mmol/L is added. The volume ratio of the two solutions is 1:1~1:2. ~95°C constant temperature for 2.5~3.5h to grow ZnO nanostructures.

In a preferred embodiment of the present invention, the surface treatment solution in step (4) is a fluorosilane solution, the immersion time is 10~24h, and the vacuum heating furnace is baked at 180~200°C for 3h~10h; the step (5) The organic solvent is acetone or alcohol.

The beneficial effects of the present invention are: the present invention is easy to manufacture, low in cost, can convert uneven light intensity distribution into uniform light intensity distribution by means of liquid lens vibration, and has the advantages of strong adjustability and sustainable utilization.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings that need to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings without creative work, wherein:

Fig. 1 is a schematic structural view of a preferred embodiment of the dodging device of the present invention;

Fig. 2 is a static schematic diagram of the principle of the uniform light device of the present invention;

Fig. 3 is a dynamic schematic diagram of the principle of the light homogenizing device of the present invention.

detailed description

The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

See Figures 1 to 3, Example 1

A two-dimensional capacitive low-frequency vibration sensor, comprising: a first electrode plate 1-1, a second electrode plate 1-2, a third electrode plate 2-1, a fourth electrode plate 2-2, a base 3 and a liquid lens 4 , the substrate 3 is provided with a first electrode plate 1-1, a second electrode plate 1-2, a third electrode plate 2-1 and a fourth electrode plate 2-2, the first electrode plate 1-1 and the second electrode plate 1-2 form the first group of parallel plate capacitors, the third electrode plate 2-1 and the fourth electrode plate 2-2 form the second group of parallel plate capacitors, the bottom of the liquid lens 4 is embedded on the substrate 3, and the liquid lens 4 Located between the first group of parallel plate capacitors and the second group of parallel plate capacitors, the substrate 3 is a silicon wafer, and the substrate 3 is provided with hydrophilic and hydrophobic surfaces spaced apart from each other, and the liquid lens The bottom of 4 is embedded in the hydrophilic part of the substrate 3, and the liquid lens 4 is simethicone;

The preparation method of the two-dimensional capacitive low-frequency vibration sensor specifically includes the following steps:

(1) Photoresist patterning on the substrate 3: choose a silicon wafer as the substrate 3, and after the substrate 3 is cleaned, spread the glue on the substrate with a thickness of 2.2 μm; pre-bake at 90°C for 60s; Expose for 7s under a UV exposure lithography machine; bake in 110°C for 2.5min; after natural cooling, develop with NaOH with a mass percentage concentration of 5‰ for 35s; bake at 110°C for 2.5min, cool naturally, and finally make a photoresist on the substrate. glue patterning layer;

(2) Sputtering ZnO layer: use a sputtering machine to sputter a ZnO seed layer with a thickness of 65nm on the surface of the photoresist patterned layer, the radio frequency power is 120W, and the Ar pressure is 20Sccm;

(3) Growth of ZnO nanostructures in a water bath: using water bath heating, in a water bath heating furnace, the substrate with a ZnO seed layer on the surface and the bottom surface of the water bath heating furnace are at an angle of 75°, and the concentration of the addition is 30 mmol per liter A mixture of zinc nitrate hexahydrate solution and hexamethylenetetramine solution, the volume ratio of the two solutions is 1:1, and the ZnO nanostructure is grown at a constant temperature of 90° C. for 3 hours.

(4) Fluorine surface treatment: immerse in the fluorosilane surface treatment solution for 16 hours, dry it with high-purity N ₂ , and bake it in a vacuum heating furnace at 195°C for 7 hours;

(5) Residual photoresist removal: immerse the fluorine-treated substrate in acetone or alcohol organic solvent to dissolve the residual photoresist, thereby obtaining a hydrophilic and hydrophobic surface separated by hydrophilic and hydrophobic, and retaining liquid on the surface of the hydrophilic area The volume is 5 μL;

(6) Sensor package: Drop liquid lens 4 on the above-mentioned hydrophilic and hydrophobic surface, and set the first electrode plate 1-1, the second electrode plate 1-2, and the third electrode plate 2-1 around the base 3 And the fourth electrode plate 2-2, the first electrode plate 1-1 and the second electrode plate 1-2 form the first group of parallel plate capacitors, the third electrode plate 2-1 and the fourth electrode plate 2-2 form the second A group of parallel plate capacitors, the bottom of the liquid lens 4 is embedded on the substrate 3, and the liquid lens 4 is located between the first group of parallel plate capacitors and the second group of parallel plate capacitors, the first electrode plate 1-1, the second electrode plate The 1-2 electrode plates cannot be in contact with each other during packaging, and the third electrode plate 2-1 and the fourth electrode plate 2-2 cannot be in contact with each other during packaging.

When an AC voltage is applied between two parallel plate capacitors, due to the Wenzel effect, the bottom of the liquid lens 4 adheres to the hydrophilic region 5 on the surface of the substrate 3, and the rest of the liquid lens rapidly reciprocates along the vibration direction on the superhydrophobic surface 6 , so that the uneven light intensity 8 emitted by LED (light emitting diode), LD (laser diode), etc. is dispersed into uniform light intensity 7.

See Figures 1 to 3, Example 2

A two-dimensional capacitive low-frequency vibration sensor, comprising: a first electrode plate 1-1, a second electrode plate 1-2, a third electrode plate 2-1, a fourth electrode plate 2-2, a base 3 and a liquid lens 4 , the substrate 3 is provided with a first electrode plate 1-1, a second electrode plate 1-2, a third electrode plate 2-1 and a fourth electrode plate 2-2, the first electrode plate 1-1 and the second electrode plate 1-2 form the first group of parallel plate capacitors, the third electrode plate 2-1 and the fourth electrode plate 2-2 form the second group of parallel plate capacitors, the bottom of the liquid lens 4 is embedded on the substrate 3, and the liquid lens 4 Located between the first group of parallel plate capacitors and the second group of parallel plate capacitors, the substrate 3 is quartz glass, and the substrate 3 is provided with hydrophilic and hydrophobic surfaces spaced apart from each other. The liquid lens The bottom of 4 is embedded in the hydrophilic part of the substrate 3, and the liquid lens 4 is glycerol;

The preparation method of the two-dimensional capacitive low-frequency vibration sensor specifically includes the following steps:

(1) Photoresist patterning on the substrate 3: choose quartz glass as the substrate 3, after the substrate 3 is cleaned, spread the glue on the substrate with a thickness of 1.5 μm; pre-bake at 85°C for 65s; Expose for 7s under a UV exposure lithography machine; bake at 105°C for 3min; after natural cooling, use NaOH with a mass percentage concentration of 5‰ for 30s; bake at 105°C for 3min, cool naturally, and finally make a photoresist pattern on the substrate Chemical layer;

(2) Sputtering ZnO layer: use a sputtering machine to sputter a ZnO seed layer with a thickness of 50nm on the surface of the photoresist patterned layer, the radio frequency power is 120W, and the Ar pressure is 20Sccm;

(3) Growth of ZnO nanostructures in water bath: using water bath heating method, in the water bath heating furnace, the ZnO seed layer forms an angle of 70° with the bottom surface of the water bath heating furnace, adding zinc nitrate hexahydrate solution and six Methylenetetramine solution mixed solution, the volume ratio of the two solutions is 1:1, and the ZnO nanostructure is grown at a constant temperature of 85° C. for 3.5 hours.

(4) Fluorine surface treatment: immerse in the fluorosilane surface treatment solution for 10 hours, dry it with high-purity N ₂ , and bake it in a vacuum heating furnace at 180°C for 10 hours;

(5) Residual photoresist removal: immerse the substrate after fluorine surface treatment in acetone or alcohol organic solvent to dissolve the residual photoresist, so as to obtain a hydrophilic and hydrophobic surface separated by hydrophilic and hydrophobic, and the surface of the hydrophilic area remains The liquid volume is 5 μL;

(6) Sensor package: Drop liquid lens 4 on the above-mentioned hydrophilic and hydrophobic surface, and set the first electrode plate 1-1, the second electrode plate 1-2, and the third electrode plate 2-1 around the base 3 And the fourth electrode plate 2-2, the first electrode plate 1-1 and the second electrode plate 1-2 form the first group of parallel plate capacitors, the third electrode plate 2-1 and the fourth electrode plate 2-2 form the second A group of parallel plate capacitors, the bottom of the liquid lens 4 is embedded on the substrate 3, and the liquid lens 4 is located between the first group of parallel plate capacitors and the second group of parallel plate capacitors, the first electrode plate 1-1, the second electrode plate The 1-2 electrode plates cannot be in contact with each other during packaging, and the third electrode plate 2-1 and the fourth electrode plate 2-2 cannot be in contact with each other during packaging.

When an AC voltage is applied between two parallel plate capacitors, due to the Wenzel effect, the bottom of the liquid lens 4 adheres to the hydrophilic region 5 on the surface of the substrate 3, and the rest of the liquid lens rapidly reciprocates along the vibration direction on the superhydrophobic surface 6 , so that the uneven light intensity 8 emitted by LED (light emitting diode), LD (laser diode), etc. is dispersed into uniform light intensity 7.

See Figures 1 to 3, Example 3

A two-dimensional capacitive low-frequency vibration sensor, comprising: a first electrode plate 1-1, a second electrode plate 1-2, a third electrode plate 2-1, a fourth electrode plate 2-2, a base 3 and a liquid lens 4 , the substrate 3 is provided with a first electrode plate 1-1, a second electrode plate 1-2, a third electrode plate 2-1 and a fourth electrode plate 2-2, the first electrode plate 1-1 and the second electrode plate 1-2 form the first group of parallel plate capacitors, the third electrode plate 2-1 and the fourth electrode plate 2-2 form the second group of parallel plate capacitors, the bottom of the liquid lens 4 is embedded on the substrate 3, and the liquid lens 4 Located between the first group of parallel plate capacitors and the second group of parallel plate capacitors, the substrate 3 is K9 glass, and the substrate 3 is provided with hydrophilic and hydrophobic surfaces spaced apart from each other, and the liquid lens The bottom of 4 is embedded in the hydrophilic part of the substrate 3, and the liquid lens 4 is simethicone;

The preparation method of the two-dimensional capacitive low-frequency vibration sensor specifically includes the following steps:

(1) Photoresist patterning on the substrate 3: K9 glass is selected as the substrate 3. After the substrate 3 is cleaned, the glue is evenly distributed on the substrate with a thickness of 3 μm; pre-baked at 95°C for 55s; Expose for 8s under the UV exposure photolithography machine; bake in 115°C for 2min; after natural cooling, develop with NaOH with a mass percentage concentration of 5‰ for 40s; bake at 115°C for 2min, cool naturally, and finally make a patterned photoresist on the substrate Floor;

(2) Sputtering ZnO layer: use a sputtering machine to sputter a ZnO seed layer with a thickness of 80nm on the surface of the photoresist patterned layer, the radio frequency power is 120W, and the Ar pressure is 20Sccm;

(3) Growth of ZnO nanostructures in water bath: using water bath heating method, in the water bath heating furnace, the ZnO seed layer is at an angle of 80° with the bottom surface of the water bath heating furnace, adding zinc nitrate hexahydrate solution and six Methylenetetramine solution mixed solution, the volume ratio of the two solutions is 1:2, and the ZnO nanostructure is grown at a constant temperature of 95° C. for 2.5 hours.

(4) Fluorine surface treatment: immerse in the fluorosilane surface treatment solution for 24 hours, dry it with high-purity N2, and bake it in a vacuum heating furnace at 200°C for 3 hours;

(5) Residual photoresist removal: immerse the fluorine surface-treated substrate in acetone or alcohol organic solvent to dissolve the residual photoresist, thereby obtaining a hydrophilic and hydrophobic surface separated by hydrophilic and hydrophobic phases, and remaining on the surface of the hydrophilic area The liquid volume is 5 μL;

(6) Sensor package: Drop liquid lens 4 on the above-mentioned hydrophilic and hydrophobic surface, and set the first electrode plate 1-1, the second electrode plate 1-2, and the third electrode plate 2-1 around the base 3 And the fourth electrode plate 2-2, the first electrode plate 1-1 and the second electrode plate 1-2 form the first group of parallel plate capacitors, the third electrode plate 2-1 and the fourth electrode plate 2-2 form the second A group of parallel plate capacitors, the bottom of the liquid lens 4 is embedded on the substrate 3, and the liquid lens 4 is located between the first group of parallel plate capacitors and the second group of parallel plate capacitors, the first electrode plate 1-1, the second electrode plate The 1-2 electrode plates cannot be in contact with each other during packaging, and the third electrode plate 2-1 and the fourth electrode plate 2-2 cannot be in contact with each other during packaging.

When an AC voltage is applied between two parallel plate capacitors, due to the Wenzel effect, the bottom of the liquid lens 4 adheres to the hydrophilic region 5 on the surface of the substrate 3, and the rest of the liquid lens rapidly reciprocates along the vibration direction on the superhydrophobic surface 6 , so that the uneven light intensity 8 emitted by LED (light emitting diode), LD (laser diode), etc. is dispersed into uniform light intensity 7.

The beneficial effects of the light homogenization device and its preparation method of the present invention are: the present invention proposes a light homogenization device that is simple to manufacture, low in cost, and can be adjusted in real time. The liquid of the liquid lens will vibrate under the drive of the electric field, and the liquid lens will The focal length and focus of the LED are constantly changing, and by controlling the amplitude and frequency of the applied AC electric field, the uniform light effect of the secondary light distribution of LED (light-emitting diode) and LD (laser diode) can be realized.

The above descriptions are only examples of the present invention, and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made by using the content of the description of the present invention, or directly or indirectly used in other related technical fields, shall be The same reasoning is included in the patent protection scope of the present invention.

Claims (10)

1. A homogenizing device, characterized in that, comprising: a first electrode plate, a second electrode plate, a third electrode plate, a fourth electrode plate, a base and a liquid lens, the base is provided with the first electrode plate, the second electrode plate The electrode plate, the third electrode plate and the fourth electrode plate, the first electrode plate and the second electrode plate form the first group of parallel plate capacitors, the third electrode plate and the fourth electrode plate form the second group of parallel plate capacitors, the liquid lens The base is mounted on the substrate and the liquid lens is positioned between the first set of parallel plate capacitors and the second set of parallel plate capacitors. 2. The light homogenizing device according to claim 1, wherein the substrate is silicon wafer, quartz glass or K9 glass. 3. The light homogenizing device according to claim 1, wherein the liquid used in the liquid lens is glycerol or simethicone. 4. The light homogenizing device according to claim 1, characterized in that, the substrate is provided with hydrophilic and hydrophobic surfaces spaced apart from each other. 5. The light homogenizing device according to claim 4, characterized in that, the bottom of the liquid lens is embedded in the hydrophilic part of the base. 6. The preparation method of the homogenizing device according to claim 1, characterized in that, comprising the following steps: (1) Photoresist patterning on the substrate: After the substrate is cleaned, the photoresist patterning layer is produced on the substrate by the photolithography process of uniform coating, pre-baking, exposure, middle baking, development and post-baking; (2) Sputtering ZnO layer: use a sputtering machine to sputter a ZnO seed layer on the surface of the photoresist patterned layer; (3) Growth of ZnO nanostructures in a water bath: use water bath heating method to grow ZnO nanostructures in a water bath heating furnace; (4) Fluorine surface treatment: immerse in the surface treatment solution, dry it with high-purity _N2 , and bake it in a vacuum heating furnace; (5) Residual photoresist removal: immerse the substrate after fluorine surface treatment in an organic solvent to dissolve the residual photoresist, thereby obtaining a hydrophilic and hydrophobic surface separated by hydrophilic and hydrophobic phases; (6) Sensor packaging: a liquid lens is arranged on the above-mentioned hydrophilic and hydrophobic surface, and the first electrode plate, the second electrode plate, the third electrode plate and the fourth electrode plate are arranged around the base, and the first electrode plate and the second electrode plate The two electrode plates form the first group of parallel plate capacitors, the third electrode plate and the fourth electrode plate form the second group of parallel plate capacitors, the bottom of the liquid lens is embedded on the substrate, and the liquid lens is located between the first group of parallel plate capacitors and the second group of parallel plate capacitors. Between two sets of parallel plate capacitors. 7. The preparation method according to claim 6, characterized in that, in the step (1), the specific step of patterning the photoresist on the substrate is: after the substrate is cleaned, uniform glue is applied on the substrate with a thickness of 1.5-3 μm; Pre-bake at 85~95°C for 55~65s; after natural cooling, expose for 7~8s under a contact UV exposure lithography machine; bake at 105~115°C for 2~3min; after natural cooling, use a mass percent concentration of 5 ‰NaOH development for 30~40s; bake at 105~115℃ for 2~3min, and cool naturally. 8 . The preparation method according to claim 6 , wherein the sputtering thickness of the ZnO seed layer in step (2) is 50 nm to 80 nm. 9. The preparation method according to claim 6, characterized in that, the specific steps of step (3) growing ZnO nanostructures in a water bath are: using a water bath heating method, in a water bath heating furnace, the substrate with a ZnO seed layer on the surface Form an angle of 70°~80° with the bottom surface of the water bath heating furnace, add a mixture of zinc nitrate hexahydrate solution and hexamethylenetetramine solution with a concentration of 30mmol/L, and the volume ratio of the two solutions is 1:1~ 1:2, at a constant temperature of 85~95℃ for 2.5~3.5h, grow ZnO nanostructures. 10. The preparation method according to claim 6, wherein the surface treatment solution in step (4) is a fluorosilane solution, the immersion time is 10~24h, and the vacuum heating furnace is baked at 180~200°C for 3h~10h; The organic solvent in step (5) is acetone or alcohol.