CN103474425B - The miniature flexible LED area array device of high uniformity of luminance and preparation method - Google Patents

Abstract

The miniature flexible LED area array device of high uniformity of luminance and preparation method, relate to luminescence display technical field, solve existing plane LED micro-display device and cause using restricted problem owing to not bending, electric current injects from Graphene transparent upper electrode, flow out from bottom electrode, form electric field in the devices, make positive negative carrier at luminescent layer recombination luminescence.Wherein part light is upwards through photic zone, Graphene transparent upper electrode, penetrates from lenticule; Part light arrives reflector downwards, by reflective layer reflects, through luminescent layer, photic zone, Graphene transparent upper electrode, penetrates from lenticule.Principle of luminosity due to this luminescent device is that the Carrier recombination in p-n junction is luminous, and have the nonlinear characteristic of diode current voltage, luminosity also has nonlinear characteristic with the size of Injection Current.The present invention is secretly bright by control circui phase primitive element, realizes luminescence display.

Description

Miniature flexible LED area array device with high luminous uniformity and preparation method

technical field

The invention belongs to the technical field of light emitting display, and relates to a novel micro flexible light emitting device, in particular to an AlGaInP-LED flexible micro device and a manufacturing method.

Background technique

In recent years, with the development of the electronic industry, micro light emitting devices have developed rapidly. Compared with traditional light-emitting devices, planar LED microdisplay arrays have many incomparable advantages, but their application range is largely limited due to their inflexibility. Although OLED technology has good application prospects, compared with LED, there are still some shortcomings. For example, there are still some problems in micro-miniature devices, such as luminous brightness, uniformity, and luminous efficiency. Lifespan issues, these issues will limit the application and development of OLED to a large extent. With the development of science and technology, there is an increasingly urgent demand for micro-flexible LED display arrays that can achieve high resolution, bright and durable, and are thin and light, and can be applied to curved surfaces.

Contents of the invention

The problem to be solved by the present invention is to provide a micro-flexible LED display device based on graphene flexible electrodes, which has flexible connection materials between metal electrodes and light-emitting units, and is easy to bend and easy to carry.

High uniformity miniature flexible LED area array device, including a light-transmitting layer, a light-emitting layer, a reflective layer, a substrate, an upper electrode, an upper electrode lead, a lower electrode, a lower electrode lead, a flexible region and a microlens; The light-emitting layer, the light-transmitting layer, the upper electrode and the micro-lens are in sequence, and the substrate is below the reflective layer; the light-transmitting layer, the light-emitting layer, the reflecting layer and the substrate are composed of an LED light-emitting unit, and a plurality of LED light-emitting units are evenly arranged. An array of light-emitting units is formed; among the plurality of LED light-emitting units is a flexible area, and the flexible area connects each light-emitting unit in sequence and makes the array of LED light-emitting units bendable; an upper electrode is arranged on the upper surface of the light-transmitting layer, The upper surface of the flexible material is arranged with upper electrode leads, the upper electrodes in the same row are connected to the upper electrode leads in turn, and the lower surface of the substrate is arranged with lower electrodes, and the lower electrodes in the same column are connected through the lower electrode leads; The lower lead column composed of the lower electrode and the lower electrode lead and the upper lead row composed of the upper electrode and the upper electrode lead are perpendicular to each other in the arrangement direction, and the material of the upper electrode and the upper electrode lead is graphene.

A method for preparing a micro-flexible LED area array device with high uniformity, the method is realized by the following steps:

Step 1. Cleaning and front protection of the light-emitting chip; first, select the light-emitting chip, which is composed of a light-transmitting layer, a light-emitting layer, a reflective layer and a substrate; then, clean the light-emitting chip, and Prepare a layer of upper protective film on the upper surface of the light-transmitting layer of the chip;

Step 2, preparation of the upper isolation trench; through photolithography and etching of the upper protective film, the window pattern of the flexible area is exposed, that is, the upper isolation trench pattern; under the cover of the upper protective film and photoresist, the upper surface of the light-emitting chip is Wet etching or ICP etching removes the light-emitting chip material in the flexible area and forms an upper isolation trench with a certain depth;

Step 3, filling the upper isolation trench;

Step 31: Coating a flexible material on the upper surface of the light-emitting chip prepared with the upper isolation trench, and performing pre-curing;

Step 32, removing the flexible material on the upper surface of the light-transmitting layer through photolithography and etching, and forming a concave shape on the upper surface of the formed filling material by removing glue and etching again;

Step 33, complete the complete curing of the flexible material, and remove the upper protective film;

Step 4, preparing a graphene transparent and flexible upper electrode and upper electrode leads on the upper surface of the light-emitting chip;

Step 5, preparing a microlens; preparing a high-adhesion polymer layer on the light-emitting chip with the upper electrode and the upper electrode lead, and obtaining a polymer microlens by a hot-melt method;

Step 6, the front of the light-emitting chip is fixed; the upper surface of the light-emitting chip is fixed on the upper protective sheet with an adhesive;

Step 7, the back surface of the light-emitting chip is thinned; the lower surface of the substrate of the light-emitting chip is thinned, and then polished;

Step 8, pixel segmentation of the light-emitting chip to obtain multiple LED light-emitting units;

Step 81, preparing a lower protective film on the lower surface of the polished light-emitting chip substrate;

Step 82, exposing the flexible area window by aligning the photolithography and etching the protective film on both sides;

Step 83: Etching the lower surface of the light-emitting chip under the cover of the lower protective film and photoresist, completely removing the material of the light-emitting chip in the flexible area, realizing pixel division of the light-emitting chip, and obtaining multiple LED light-emitting units;

Step 84, removing the lower protective film;

Step 9: Prepare the lower electrode and the lower electrode lead, prepare the lower electrode and the lower electrode lead on the back of the light-emitting chip, remove the upper protective sheet, make the circuit lead, and complete the production of the LED device.

Beneficial effects of the present invention: the working process of the miniature flexible LED display device of the present invention is that current is injected from the upper electrode and flows out from the lower electrode, forming an electric field in the device, so that positive load carriers recombine and emit light in the light-emitting layer. Part of the light goes upward through the light-transmitting layer and exits from the microlens; part of the light reaches down to the reflective layer, is reflected by the reflective layer, passes through the light-emitting layer and the light-transmitting layer, and exits from the microlens. Since the luminescence principle of the light-emitting device is the recombination of carriers in the p-n junction, it has the nonlinear characteristics of diode current and voltage, and the luminous brightness also has nonlinear characteristics with the magnitude of the injected current. The invention controls the brightness and darkness of the phase elements through a circuit to realize luminescent display. The flexible device proposed by the present invention can realize the function of bending display due to the flexible electrode structure and the connecting flexible material in the groove, and the manufacturing process of this device is simple and easy. The device proposed by the present invention adopts vertical upper and lower electrodes with different planes and a flexible and transparent graphene upper electrode, which can theoretically obtain higher luminous efficiency and more uniform current distribution.

Description of drawings

Fig. 1 is an effect diagram of the high-uniformity miniature flexible LED area array device described in the present invention. Among them, Fig. 1a is the stretched state of the device, and Fig. 1b is the bent state of the device.

In Fig. 2, Fig. 2a is a main cross-sectional view of the highly uniform micro-flexible LED array device of the present invention, and Fig. 2b is a left-side cross-sectional view of the micro-flexible LED display device of the present invention.

Fig. 3 is a distribution diagram of light-emitting units using square light-emitting units in the high-uniformity micro-flexible LED area array device of the present invention.

Fig. 4a and Fig. 4b in Fig. 4 are schematic diagrams of two kinds of upper electrodes and upper electrode lead structures using square light-emitting units in the high-uniformity micro-flexible LED area array device of the present invention;

Fig. 5a to Fig. 5d in Fig. 5 are schematic diagrams of four kinds of lower electrodes and lower electrode lead wire structures using square light-emitting units in the high-uniformity micro-flexible LED area array device according to the present invention.

Fig. 6 is a distribution diagram of light-emitting units using circular light-emitting units in the high-uniformity micro-flexible LED area array device of the present invention.

Fig. 7a and Fig. 7b in Fig. 7 are schematic diagrams of two types of upper electrodes and upper electrode lead structures using circular light-emitting units in the high-uniformity micro-flexible LED area array device of the present invention.

8a to 8d in FIG. 8 are schematic diagrams of four types of lower electrodes and lower electrode lead wire structures using circular light-emitting units in the high-uniformity micro-flexible LED area array device of the present invention.

Figures 9a to 9m in Figure 9 are the basic process steps of the manufacturing method of the high-uniformity micro-flexible LED array device according to the present invention; among them, Figure 9n and Figure 9o are the left side views of the device obtained by the method of the present invention sectional view, and front sectional view.

FIG. 10 is another structural schematic diagram of the high-uniformity miniature flexible LED array device of the present invention.

detailed description

Specific Embodiments 1. This embodiment is described in conjunction with FIGS. 1 to 8. The highly uniform micro-flexible LED area array device described in this embodiment includes: a light-transmitting layer 1, a light-emitting layer 2, a reflective layer 3, and a substrate 4 , upper electrode 5, upper electrode lead 9, lower electrode 6, lower electrode lead 10, flexible region 7 and microlens 8; above the reflective layer 3 are light emitting layer 2, light-transmitting layer 1, upper electrode 5 and microlens 8 , the reflective layer 3 is the substrate 4 below. The light-transmitting layer 1, the light-emitting layer 2, the reflective layer 3 and the substrate 4 form an LED light-emitting unit. The LED light-emitting units are uniformly arranged to form a light-emitting unit array. There is a flexible area 7 between the light emitting units, and the flexible area 7 connects each light emitting unit sequentially and makes the entire LED light emitting unit array bendable. The upper surface of the light-transmitting layer 1 is arranged with an upper electrode 5, and the upper surface of the flexible region 7 is arranged with an upper electrode lead 9. A lower electrode 6 is arranged on the surface, and a lower electrode lead 10 is arranged in the area where the flexible material between the pixels is close to the lower surface, and the lower electrodes 6 in the same row are connected with the lower electrode lead 10 in turn, and the shape of the lower electrode 6 is rectangular , circle, single bar, double bar or other shapes. The lower lead row composed of the lower electrode 6 and the lower electrode lead 10 and the upper lead row composed of the upper electrode 5 and the upper electrode lead 9 are perpendicular to each other in different directions. The material of the upper electrode 5 and the upper electrode lead 9 is a graphene film.

The light emitting unit described in this embodiment is square, rectangular, circular or other shapes. The shape of the upper electrode 5 is circular, circular, single strip, double strip or other shapes. This embodiment also includes a flexible area 7 located on the lower surface of the substrate 4 of the LED light-emitting unit, that is, the back flexible material layer, and the back flexible material layer covers the lower electrode 6 and the lower electrode lead 10 .

The light-transmitting layer 1 , light-emitting layer 2 , reflective layer 3 , and substrate 4 described in this embodiment are general-purpose AlGaInPLED epitaxial wafer materials produced by conventional techniques. The material of upper electrode 5 and upper electrode lead 9 is graphene thin film, and the material of lower electrode 14, lower electrode lead 15 is graphene, or is by Cr/Au, Ti/Pt/Au, Ti/Mo/Au, AuGeNi/ Any one of Au, Al or Cu, or a composite film composed of Cr/Au, Ti/Pt/Au, Ti/Mo/Au or AuGeNi/Au and Cu, or a composite film composed of Cr/Au, Ti/Pt /Au, Ti/Mo/Au or AuGeNi/Au and Au composite film. The material of the flexible area 7 is polyimide or flexible epoxy resin or other flexible materials that are easy to be coated and molded, and the material of the microlens 8 is hard epoxy resin or PDMS or other high transmittance materials.

Specific Embodiment 2. This embodiment is described with reference to FIG. 9 and FIG. 10. The high-uniformity micro-flexible LED area array device described in this embodiment adopts a top-down manufacturing method, firstly fabricating the front structure, and then protecting For the front structure, prepare the back structure. The specific process is:

A. Cleaning and front protection of light-emitting chips:

a) The matrix material used in the present invention is a light-emitting chip, and the light-emitting chip used is composed of a light-transmitting layer, a light-emitting layer, a reflective layer and a substrate, as shown in FIG. 9a.

b) Cleaning the light-emitting chip. Then prepare a layer of upper protective film on the upper surface of the light-emitting chip, that is, the upper surface of the light-transmitting layer, as shown in FIG. 9b.

B. Preparation of upper isolation trench:

Through photolithography and corrosion of the upper protective film, the window pattern of the flexible area is exposed, that is, the pattern of the upper isolation trench. Wet etching or ICP etching is performed on the upper surface of the light-emitting chip under the cover of the upper protective film and photoresist to remove the material of the light-emitting chip in the flexible region and form an upper isolation trench with a certain depth, as shown in FIG. 9c.

C. Filling of the upper isolation trench:

a) Coating a flexible material on the upper surface of the light-emitting chip prepared with the upper isolation trench, and performing pre-curing, as shown in FIG. 9d.

b) removing the flexible material on the upper surface of the light-transmitting layer through photolithography and etching processes. And the upper surface of the formed filling material is formed into a concave shape by removing glue and corroding again, so as to facilitate the upper electrode attached thereon to have a bendable property.

c) Complete curing of the flexible material.

d) Remove the upper protective film, as shown in Figure 9e.

D. Preparation of graphene transparent and flexible upper electrode and upper electrode lead:

Fabricate flexible upper electrode leads on the light emitting unit of graphene material and flexible upper electrode leads outside the light emitting unit, as shown in FIG. 9f.

E. Fabrication of microlenses:

A polymer layer with high adhesion is prepared on the light-emitting chip with the upper electrode lead on the light-emitting unit and the upper electrode lead outside the light-emitting unit, and a polymer microlens is obtained by hot-melting, as shown in FIG. 9g.

F. Fixation of the front side of the light-emitting chip:

In order to protect the light-emitting chip with the upper structure prepared, it is fixed on the upper protective sheet with an adhesive, and FIG. 9h shows the light-emitting chip with the front side fixed.

G. Thinning the back surface of the light-emitting chip, that is, thinning the lower surface of the light-emitting chip: thinning the lower surface of the entire light-emitting chip to a required thickness, and then performing polishing treatment, as shown in FIG. 9i.

H. Pixel segmentation of light-emitting chips:

a) Prepare a lower protective film on the back of the polished light-emitting chip.

b) By double-side alignment photolithography and etching the protective film, the flexible area window is exposed, as shown in Fig. 9j.

c) Etching the upper surface of the light-emitting chip under the mask of the lower protective film and the photoresist to completely remove the material of the light-emitting chip in the flexible region to realize pixel segmentation of the light-emitting chip, as shown in FIG. 9k.

d) Remove the lower protective film.

I. Preparation of lower electrode and lower electrode lead:

Prepare thin-film lower electrodes and lower electrode leads; or thick-film lower electrodes and lower electrode leads, as shown in FIG. 9l.

J. Preparation of back flexible material:

A back flexible material is prepared on the lower surface of the substrate on which the lower electrode and the lower electrode leads are prepared, as shown in FIG. 9m.

K. Remove the upper protective sheet, Fig. 9n is a cross-sectional view from the left. Figure 9o is a front sectional view. Make circuit leads to complete device fabrication.

This embodiment will be described with reference to FIG. 10 . FIGS. 10 a and 10 b are a left sectional view and a main sectional view of an LED display device without a back flexible material layer, respectively.

Specific implementation mode three. This implementation mode is an example of the preparation method of the highly uniform miniature flexible LED area array device described in the specific implementation mode two: the specific method is:

A. Cleaning and front protection of light-emitting chips:

a) The light-emitting chip used in the present invention is an AlGaInP-LED epitaxial wafer, which is composed of a light-transmitting layer, a light-emitting layer, a reflective layer and a substrate, and the thickness of the light-emitting chip is 200 μm to 1000 μm.

b) The material of the upper protective film is silicon dioxide or silicon nitride or a composite film composed of silicon dioxide and silicon nitride or metal or organic material or inorganic material or other film materials that can play a protective role. The preparation method of the protective film is electron beam evaporation, radio frequency sputtering, magnetron sputtering, sol-gel method or other film growth methods.

B. Preparation of upper isolation trench:

a) Forming a photoresist window pattern in the flexible region, that is, an upper isolation trench pattern, on the upper protective film through a photolithography process.

b) obtaining the upper isolation groove pattern of the protective film by dry etching or wet etching under the protection of the photoresist. The thickness of the photoresist is 0.2 μm-15 μm.

c) Under the cover of the protective film and photoresist, perform wet etching or ICP etching on the upper surface of the light-emitting chip. A certain depth; the depth of the upper isolation trench is 100-300 μm.

C. Filling of the upper isolation trench:

a) The flexible material coated on the surface of the light-emitting chip, that is, the pixel connection material is polyimide or flexible epoxy resin or polydimethylsiloxane (PDMS) or other flexible organic materials that can be coated to form a film. The pre-curing method is heat curing or room temperature curing.

b) removing the flexible material on the upper surface of the light-transmitting layer by photolithography and wet etching.

c) Removing the glue, and performing secondary etching with an etchant or a specific solvent, so that the upper surface of the formed filling material is formed into a concave shape.

d) Complete curing of the flexible material is achieved.

e) removing the upper protective film by wet etching or dry etching.

D. Preparation of graphene transparent and flexible upper electrode and upper electrode lead: use chemical vapor deposition technology or liquid phase electrochemical deposition technology or combine graphene aqueous dispersion spin-coating technology with photolithography, masking or corrosion technology The upper surface of the light-emitting chip that has completed step C is prepared with a flexible graphene film upper electrode and upper electrode leads.

E. Preparation of microlenses; coating a layer of polymer colloid on the light-emitting chip that has completed the upper electrode lead of the light-emitting unit and the outer upper electrode lead of the light-emitting unit, and the specific thickness is determined according to the design and process experiments; UV-curing the polymer colloid or thermal curing to obtain a polymer layer with high adhesion; spin-coat a certain thickness of photoresist on the cured polymer, and after pre-baking, exposure, and development, use the hot-melt method to make photoresist microlenses ; Reactive ion etching is used to transfer the photoresist microlens to the aforementioned polymer to obtain the polymer microlens. Polymer lens material is polyimide or epoxy or SU-8 photoresist.

F. Fixing the front side of the light-emitting chip: the adhesive material is photoresist or heat curing glue or ultraviolet curing glue or other bonding materials. The material of the upper protective sheet is silicon or glass or quartz or ceramics or aluminum or titanium or other inorganic materials or organic materials or metal materials.

G. Thinning of the lower surface of the light-emitting chip: the lower surface of the light-emitting chip is thinned and polished by mechanical thinning and polishing or chemical thinning and polishing or a combination of mechanical and chemical methods. The light-emitting chip after thinning is 20 ~300μm.

H. Pixel segmentation of light-emitting chips:

a) The material of the lower protective film is silicon dioxide or silicon nitride or a composite film composed of silicon dioxide and silicon nitride or metal or organic material or inorganic material or other film materials that can play a protective role. The preparation method of the protective film is electron beam evaporation, radio frequency sputtering, magnetron sputtering, sol-gel method or other film growth methods.

b) forming a photoresist window pattern in the flexible region on the lower protective film through a double-side alignment photolithography process.

c) obtaining the window pattern of the lower protective film by dry etching or wet etching under the protection of the photoresist. The thickness of the photoresist is 0.2 μm-15 μm.

d) performing wet etching or ICP etching on the upper surface of the light-emitting chip under the mask of the protective film and the photoresist to realize pixel division of the light-emitting chip.

e) The lower protective film is removed by wet etching or dry etching.

I. Prepare the lower electrode and the lower electrode lead: prepare the thin film lower electrode and the lower electrode lead by the lift-off process or the coating-lithography-corrosion process, or prepare the thick film by photolithography, evaporation and electroforming. Membrane lower electrode and lower electrode leads.

The material of the lower electrode and the lower electrode lead is Cr/Au or Ti/Pt/Au or Ti/Mo/Au or AuGeNi/Au or Al or Cu, or made of Cr/Au or Ti/Pt/Au or Ti/Mo Composite film composed of /Au or AuGeNi/Au and Cu or Au. The thin film evaporation method is electron beam evaporation or radio frequency sputtering or magnetron sputtering.

There are two specific methods for preparing the thick-film lower electrode and the lower electrode leads: 1. First, perform thick photolithography to obtain a thick photoresist pattern opposite to the pattern of the lower electrode, and then vapor-deposit the lower electrode film. The lower electrode is selected from Au or AuGeNi/ Au or Ti/Pt/Au or Ti/Mo/Au or other metals with good ohmic contact characteristics with the substrate. After stripping, electroforming is performed to thicken the electrode. The electroformed material is the same or different from the evaporated film material.

2. The thick-film lower electrode and lower electrode leads can also adopt the following process: first, evaporate the lower electrode film, and use Au or AuGeNi/Au or Ti/Pt/Au or Ti/Mo/Au for the lower electrode or other materials that have good compatibility with the substrate. Metals with ohmic contact properties. Then perform thick resist photolithography to obtain a thick photoresist pattern opposite to that of the lower electrode. Electroforming makes the electrode thicker, and the electroforming material is the same or different from the evaporated film material. Finally, the thick photoresist is removed to obtain thick film electrodes.

J. Preparation of flexible material on the back surface: Spin coating or spraying a flexible material coating with a required thickness on the lower surface of the substrate on which the lower electrodes and lower electrode leads have been prepared, and then curing to form a flexible material layer on the back. The material of the back flexible material layer is polyimide or flexible epoxy resin or polydimethylsiloxane (PDMS) or other flexible organic materials that can be coated to form a film.

K. Remove the upper protective sheet, and remove the protective sheet and adhesive with wet or dry methods.

The invention adopts the inorganic active light-emitting diode chip to prepare the flexible micro-display device, which has a simple structure, firmness, and fast response; and overcomes the problems of the short life of the organic light-emitting device and the low driving current that limit the light output intensity, thereby providing a self-luminous, A bendable and flexible micro-display device based on a high-brightness light-emitting chip with small volume and low power consumption and a preparation method thereof. This bendable and flexible microdisplay device can be applied to many fields such as medical equipment and micro sensor device manufacturing.

Claims (10)

1. the miniature flexible LED area array device of high uniformity, comprises photic zone (1), luminescent layer (2), reflector (3), substrate (4), top electrode (5), top electrode lead-in wire (9), bottom electrode (6), bottom electrode lead-in wire (10), flexible region (7) and lenticule (8); It is characterized in that, described reflector (3) is followed successively by luminescent layer (2), photic zone (1), top electrode (5) and lenticule (8) above, is substrate (4) below reflector (3); Described photic zone (1), luminescent layer (2), reflector (3) and substrate (4) composition LED luminescence unit, multiple LED luminescence unit is evenly arranged composition array of light emitting cells; Be flexible region (7) between described multiple LED luminescence unit, flexible region (7) makes each luminescence unit connect successively and makes LED array of light emitting cells flexible; The upper surface of described photic zone (1) is placed with top electrode (5), the upper surface of flexible region (7) is placed with top electrode lead-in wire (9), the top electrode (5) being in same a line go between with top electrode (9) be connected successively, have bottom electrode (6) in the underside view of part of substrate (4), the bottom electrode (6) being in same row is connected by bottom electrode lead-in wire (10); The upper row antarafacial in orientation that goes between that the lower lead-in wire that described bottom electrode (6) and bottom electrode lead-in wire (10) form arranges and top electrode (5) goes between with top electrode (9) forms is vertical, and the material of described top electrode (5) and top electrode lead-in wire (9) is Graphene;

The preparation method of the miniature flexible LED area array device of high uniformity, the method is realized by following steps:

The cleaning of step one, luminescence chip and front protecting; First, select luminescence chip, described luminescence chip is made up of photic zone, luminescent layer, reflector and substrate; Then, luminescence chip is cleaned, and prepare one deck upper protective film at the euphotic upper surface of described luminescence chip;

The preparation of step 2, upper isolated groove; By photoetching and corrosion upper protective film, expose the graph window of flexible region, namely go up isolated groove figure; Under the sheltering of upper protective film and photoresist, wet etching or ICP etching are carried out to luminescence chip upper surface, remove the luminescence chip material of flexible region, form the upper isolated groove of certain depth;

The filling of step 3, upper isolated groove;

Step 3 one, on preparation has the upper surface coating flexible material of luminescence chip of isolated groove, and carry out precuring;

Step 3 two, removed the flexible material of photic zone upper surface by photoetching and etching process, and by the formation concave shape of removing photoresist and corrosion makes formed packing material upper surface again;

Step 3 three, complete the solidification completely of flexible material, remove upper protective film;

Step 4, the upper surface of luminescence chip carry out Graphene transparent flexible top electrode and top electrode lead-in wire preparation;

Step 5, prepare lenticule (8); The luminescence chip completing top electrode and top electrode lead-in wire is prepared the polymeric layer of high adhesion, obtains polymer lenticules by hot melt; The polymeric layer material of described high adhesion is polyimides, epoxy resin or SU-8 photoresist;

The front of step 6, luminescence chip is fixed; Bonding agent is adopted to be fixed on upper screening glass by the upper surface of luminescence chip;

The thinning back side of step 7, luminescence chip; Carry out thinning to the lower surface of the substrate of luminescence chip, then carry out polishing;

The pixel segmentation of step 8, luminescence chip, obtains multiple LED luminescence unit;

Step Aug. 1st, complete polishing luminescence chip substrate lower surface preparation under diaphragm;

Step 8 two, by double-sided alignment photoetching and corrosion protection film, expose flexible region window;

Step 8 three, under the sheltering of lower diaphragm and photoresist, the lower surface of luminescence chip to be etched, remove the luminescence chip material of flexible region completely, realize the pixel segmentation of luminescence chip, obtain multiple LED luminescence unit;

Step 8 four, the lower diaphragm of removal;

Step 9, prepare bottom electrode and bottom electrode lead-in wire, prepare at the back side of luminescence chip bottom electrode and bottom electrode lead-in wire, screening glass in removals, making circuit lead, complete the making of LED component.

2. the miniature flexible LED area array device of high uniformity according to claim 1, it is characterized in that, also comprise the flexible region (7) of substrate (4) lower surface being positioned at LED luminescence unit, i.e. back side flexible material layer, described back side flexible material layer covers bottom electrode (6) and bottom electrode lead-in wire (10).

3. the miniature flexible LED area array device of high uniformity according to claim 1, is characterized in that, the shape of described LED luminescence unit is square, rectangle or circle; Described top electrode (5) shape is three-back-shaped, annular, wall scroll shape or two bar shaped; The shape of bottom electrode (6) is rectangle, circle, wall scroll shape or two bar shaped.

4. the preparation method of the miniature flexible LED area array device of high uniformity according to claim 1, it is characterized in that, the method is realized by following steps:

The cleaning of step one, luminescence chip and front protecting; First, select luminescence chip, described luminescence chip is made up of photic zone, luminescent layer, reflector and substrate; Then, luminescence chip is cleaned, and prepare one deck upper protective film at the euphotic upper surface of described luminescence chip;

The preparation of step 2, upper isolated groove; By photoetching and corrosion upper protective film, expose the graph window of flexible region, namely go up isolated groove figure; Under the sheltering of upper protective film and photoresist, wet etching or ICP etching are carried out to luminescence chip upper surface, remove the luminescence chip material of flexible region, form the upper isolated groove of certain depth;

The filling of step 3, upper isolated groove;

Step 3 one, on preparation has the upper surface coating flexible material of luminescence chip of isolated groove, and carry out precuring;

Step 3 two, removed the flexible material of photic zone upper surface by photoetching and etching process, and by the formation concave shape of removing photoresist and corrosion makes formed packing material upper surface again;

Step 3 three, complete the solidification completely of flexible material, remove upper protective film;

Step 4, the upper surface of luminescence chip carry out Graphene transparent flexible top electrode and top electrode lead-in wire preparation;

Step 5, prepare lenticule (8); The luminescence chip completing top electrode and top electrode lead-in wire is prepared the polymeric layer of high adhesion, and obtain polymer lenticules by hot melt, the polymeric layer material of described high adhesion is polyimides, epoxy resin or SU-8 photoresist;

The front of step 6, luminescence chip is fixed; Bonding agent is adopted to be fixed on upper screening glass by the upper surface of luminescence chip;

The thinning back side of step 7, luminescence chip; Carry out thinning to the lower surface of the substrate of luminescence chip, then carry out polishing;

The pixel segmentation of step 8, luminescence chip, obtains multiple LED luminescence unit;

Step Aug. 1st, complete polishing luminescence chip substrate lower surface preparation under diaphragm;

Step 8 two, by double-sided alignment photoetching and corrosion protection film, expose flexible region window;

Step 8 three, under the sheltering of lower diaphragm and photoresist, the lower surface of luminescence chip to be etched, remove the luminescence chip material of flexible region completely, realize the pixel segmentation of luminescence chip, obtain multiple LED luminescence unit;

Step 8 four, the lower diaphragm of removal;

Step 9, prepare bottom electrode and bottom electrode lead-in wire, prepare at the back side of luminescence chip bottom electrode and bottom electrode lead-in wire, screening glass in removals, making circuit lead, complete the making of LED component.

5. the preparation method of the miniature flexible LED area array device of high uniformity according to claim 4, it is characterized in that, also comprise step 10, preparation back side flexible material layer: be specially: preparing the lower surface rotary coating of substrate or the flexible material coating of spraying desired thickness of bottom electrode (6) and bottom electrode lead-in wire (10), then be cured, form back side flexible material layer.

6. the preparation method of the miniature flexible LED area array device of high uniformity according to claim 4, it is characterized in that, in step 4, prepare Graphene transparent upper electrode and top electrode lead-in wire by adopting chemical vapour deposition technique or Content by Electrodeposition in Liquid Phase at the upper surface of luminescence chip.

7. the preparation method of the miniature flexible LED area array device of high uniformity according to claim 4, it is characterized in that, the material of described bottom electrode (6), bottom electrode lead-in wire (10) is any one in Cr/Au, Ti/Pt/Au, Ti/Mo/Au, AuGeNi/Au, Al or Cu, or is the composite membrane be made up of any one in Cr/Au, Ti/Pt/Au, Ti/Mo/Au or AuGeNi/Au and Cu; Or be the composite membrane be made up of any one in Cr/Au, Ti/Pt/Au, Ti/Mo/Au or AuGeNi/Au and Au, or be graphene film.

8. the preparation method of the miniature flexible LED area array device of high uniformity according to claim 4, it is characterized in that, in step 9, prepare film bottom electrode and bottom electrode lead-in wire by lift-off technique or plated film, photoetching and etching process, or prepare thick film bottom electrode and bottom electrode lead-in wire by the technique that thick resist lithography, evaporation and electroforming thicken.

9. the preparation method of the miniature flexible LED area array device of high uniformity according to claim 8, is characterized in that, the preparation process of described thick film bottom electrode (6) and bottom electrode lead-in wire (10) has two kinds of methods:

The first: first carry out thick resist lithography and obtain the thick photoresist figure contrary with bottom electrode figure, then evaporation lower electrode film, after stripping, carry out electroforming, electrode is thickeied; Obtain thick film bottom electrode (6) and bottom electrode lead-in wire (10), the thin-film material of described electroforming material and evaporation is identical or different;

The second: the evaporation mode evaporation lower electrode film first adopting electron beam evaporation or radio frequency sputtering or magnetron sputtering, then carries out thick resist lithography and obtains the thick photoresist figure contrary with bottom electrode figure; Electroforming makes electrode thicken, and the thin-film material of electroforming material and evaporation is identical or different; Finally, remove thick photoresist and obtain thick film bottom electrode (6) and bottom electrode lead-in wire (10).

10. the preparation method of the miniature flexible LED area array device of high uniformity according to claim 4, it is characterized in that, the detailed process preparing lenticule (8) described in step 5 is: on the LED luminescence unit completing top electrode (5) and top electrode lead-in wire (9), apply one layer of polymeric colloid layer, and the thickness of described colloid layer determines according to design and processes experiment; Carry out ultra-violet curing or hot curing to polymeric colloid layer, obtain the polymeric layer with higher adhesion, the polymeric layer material of described higher adhesion is polyimides, epoxy resin or SU-8 photoresist; On polymer after hardening, glue is carved in spin coating, after front baking, exposure, development, adopts hot melt to make photoresist lenticule; Adopt reactive ion etching to be transferred on described polymeric layer by photoresist lenticule again, obtain polymer lenticules (8).