CN107086228A - A kind of OLED display - Google Patents
A kind of OLED display Download PDFInfo
- Publication number
- CN107086228A CN107086228A CN201610087521.4A CN201610087521A CN107086228A CN 107086228 A CN107086228 A CN 107086228A CN 201610087521 A CN201610087521 A CN 201610087521A CN 107086228 A CN107086228 A CN 107086228A
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- Prior art keywords
- layer
- oled display
- cathode
- electron transfer
- activation
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- 230000004913 activation Effects 0.000 claims abstract description 25
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 20
- 239000001301 oxygen Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 230000000694 effects Effects 0.000 claims abstract description 15
- 230000009467 reduction Effects 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 26
- 230000005540 biological transmission Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 5
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical class [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 claims description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 2
- 230000008020 evaporation Effects 0.000 abstract description 6
- 238000001704 evaporation Methods 0.000 abstract description 6
- 238000001179 sorption measurement Methods 0.000 abstract description 4
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229940049706 benzodiazepine Drugs 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention relates to display technology field, more particularly to a kind of OLED display, by increasing by one layer of activation of cathode layer between cathode layer and electron transfer layer, by the metal aoxidized during evaporation reduction, to store the Oxygen Adsorption of negative electrode bed boundary during OLED uses, greatly strengthen cathode layer activity, increase carrier injectability, improve negative electrode bed boundary, so that the performance of significant increase OLED display.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of OLED display.
Background technology
In recent years, Organic Light Emitting Diode (the Organic Light of selfluminous device are belonged to
Emitting Diode, OLED) device as flat-panel display device because with excellent performance
It is able to extensive use.Due to the material character of OLED, after moisture and oxygen invasion and attack
Easily go bad, easily cause the degeneration or failure of its characteristic, therefore strictly to prevent to come from surrounding
The oxygen and moisture of environment enter the organic substance and electrode that device inside touches sensitivity.
Although it is all to prepare under a high vacuum to prepare OLED at present, for the metal of atomic state
Steam is during evaporation still easily by faint O2Oxidation.In the OLED courses of work
Metal/organic interface is easily influenceed by oxygen, influences injectability, this is art technology
Personnel are reluctant what is seen.
The content of the invention
For above-mentioned problem, the present invention discloses a kind of OLED display, including：
Substrate；
Electron transfer layer, is arranged on the substrate；
Cathode layer, is arranged on the electron transfer layer；And
Activation of cathode layer, is arranged between the electron transfer layer and the cathode layer, and with
The cathode layer is at least partly contacted, and the metal oxide in the cathode layer is reduced into gold
Category.
It is preferred that, the material of the activation of cathode layer is the material with activation of cathode effect layer,
While to be reduced to the metal oxide, absorb and store oxygen.
It is preferred that, the material with activation of cathode effect layer is C60Or CeO2。
It is preferred that, the thickness of the activation of cathode layer is 1nm~5nm.
It is preferred that, the material of the cathode layer is Mg, Ag, AL or ytterbium (YB).
It is preferred that, the OLED display also includes：Anode layer, is arranged on the substrate
Between the electron transfer layer；
Hole transmission layer, is arranged between the anode layer and the electron transfer layer；
Luminescent layer, the luminescent layer be arranged on the electron transfer layer and the hole transmission layer it
Between；
Encapsulated layer, is arranged on the cathode layer.
It is preferred that, the OLED display also includes：
Hole injection layer, is arranged between the anode layer and the hole transmission layer；
Electron injecting layer, is arranged between the electron transfer layer and activation of cathode layer.
It is preferred that, the anode layer is composite membrane.
It is preferred that, the composite membrane includes the tin indium oxide/Ag/ tin indium oxides stacked gradually.
It is preferred that, the material of the electron transfer layer is 1,3,5- tri- (1- phenyl -1H- benzos
Imidazoles -2- bases) benzene (TPBI).
Foregoing invention has the following advantages that or beneficial effect：
The invention discloses a kind of OLED display, by negative electrode (Cathode) layer
Increase between electron transfer layer one layer of activation of cathode layer (Metal Active enhance layer,
Abbreviation MAEL), the metal aoxidized during evaporation is reduced, to use process in OLED
The middle Oxygen Adsorption by negative electrode bed boundary is stored, and greatly strengthens cathode layer activity, increase
Carrier injectability, improves negative electrode bed boundary (Cathode Interface), so as to greatly carry
Rise OLED display performance.
Brief description of the drawings
By reading the detailed description made with reference to the following drawings to non-limiting example, this hair
Bright and its feature, profile and advantage will become more apparent.The identical mark in whole accompanying drawings
Note indicates identical part.Accompanying drawing can be drawn to scale, it is preferred that emphasis is this hair is shown
Bright purport.
Fig. 1 is the schematic diagram of OLED display device in the embodiment of the present invention.
Embodiment
The present invention is further illustrated with specific embodiment below in conjunction with the accompanying drawings, but not
It is used as the restriction of the present invention.
The present invention discloses a kind of OLED display, including：Substrate, be arranged on substrate it
On electron transfer layer, the cathode layer that is arranged on electron transfer layer and be arranged on electronics biography
Activation of cathode layer between defeated layer and cathode layer, and activation of cathode layer with the surface of cathode layer extremely
Small part is contacted, and the metal oxide in the negative electrode is reduced into metal.
In a preferred embodiment of the invention, the material of above-mentioned activation of cathode layer is tool
There is the material of OSC effects, while to be reduced to the metal oxide, absorb simultaneously
Store oxygen；The negative electrode that will can be aoxidized due to the material with OSC effects during evaporation
Layer metal reduction, and store the Oxygen Adsorption of negative electrode bed boundary during OLED uses
Come, so that greatly enhancing cathode layer activity, increases carrier injectability, improve cathode layer
Interface.
In a preferred embodiment of the invention, the above-mentioned material with OSC effects is C60
Or CeO2。
In a preferred embodiment of the invention, the thickness of above-mentioned activation of cathode layer for 1~
5nm (such as 1nm, 2nm, 3nm or 5nm).
In a preferred embodiment of the invention, the material of above-mentioned cathode layer is Mg, Ag,
AL or YB.
In a preferred embodiment of the invention, the OLED display device also includes：Anode
Layer, is arranged between substrate and electron transfer layer；Hole transmission layer, is arranged on anode layer and electricity
Between sub- transport layer；Luminescent layer, is arranged between electron transfer layer and hole transmission layer；Encapsulation
Layer, is arranged on cathode layer.
On this basis, further, above-mentioned anode layer is composite membrane.
On this basis, further, above-mentioned composite membrane includes the ITO (Indium stacked gradually
Tin Oxide, tin indium oxide)/Ag/ITO.
In a preferred embodiment of the invention, above-mentioned OLED display device also includes：
The hole injection layer that is arranged between the anode layer and the hole transmission layer and it is arranged on institute
State the electron injecting layer between electron transfer layer and activation of cathode layer.
In a preferred embodiment of the invention, the material of above-mentioned electron transfer layer is TPBI.
It is 10 in pressure in a preferred embodiment of the invention-5Made under Pa high vacuum
The standby OLED display device.
The invention will be further elaborated below in conjunction with the accompanying drawings：
As shown in figure 1, the present embodiment is related to a kind of OLED display device, the specific OLED
Display device includes the substrate 1, anode layer 2, sky set gradually according to order from bottom to up
Cave implanted layer 3, hole transmission layer 4, luminescent layer 5, electron transfer layer 6, electron injecting layer 7,
Activation of cathode layer 8, cathode layer 9 and encapsulated layer (not shown in figure), wherein, should
The material of activation of cathode layer 8 is the material with OSC effects with by the gold in the cathode layer 9
Category oxide is reduced to metal, and while reduction to metal oxide, absorbs and store
Oxygen；It is preferred that, material (i.e. the material of activation of cathode layer) that should be with OSC effects can
For football alkene (C60) or ceria (CeO2) etc..
Specifically, when the material of activation of cathode layer 8 is CeO2When, its operation principle is as follows：
CeO2(1-x)+O2→CeO2(oxygen uptake, oxygen storage capacity)
CeO2+MgO→Mg+CeO2(1-x)+XO2(analysis oxygen ability)
In the present embodiment, the span of the thickness of activation of cathode layer is 1nm~5nm (examples
Such as 1nm, 2nm, 3nm or 5nm)；The material of cathode layer 9 is Mg, Ag, AL
Or YB etc., anode layer 2 can be passed using the composite membrane being made up of ITO/Ag/ITO, electronics
The material of defeated layer can be TPBI.
In the present embodiment, because the material of cathode layer 9 is usually oxidizable material, although system
Standby OLED is typically 10-5Prepared under Pa high vacuum, but for the metal of atomic state
Steam is during evaporation still easily by faint oxygen (O2) oxidation.In OLED works
Metal/organic interface is easily influenceed by oxygen during work, and then influences injectability.And
After organic/metal interface increases by one layer of activation of cathode layer, because activation of cathode layer has remarkably
Oxygen storage capacity and analysis oxygen ability, the i.e. metal oxide to being produced in metal electrode preparation process
While reduction, and the oxygen that can be separated out to reduction carries out absorption storage, exists accordingly
It is prepared by device complete after, moreover it is possible to surrounding environment (space region i.e. residing for organic/metal interface
Domain) in oxygen carry out absorption storage, further to improve the oxidation resistance of metal electrode,
And then organic/metal interface is effectively improved, so that significant increase OLED performances.
To sum up, the invention discloses a kind of OLED display, by cathode layer and electronics
Increase by one layer of activation of cathode layer between transport layer, the metal aoxidized during evaporation is reduced, with
The Oxygen Adsorption of negative electrode bed boundary is stored during OLED uses, greatly strengthened
Cathode layer activity, increases carrier injectability, improves negative electrode bed boundary, so that significant increase
OLED display performance.
It should be appreciated by those skilled in the art that those skilled in the art combine prior art and
Above-described embodiment can realize change case, will not be described here.Such change case has no effect on
The substantive content of the present invention, will not be described here.
Presently preferred embodiments of the present invention is described above.It is to be appreciated that of the invention
Above-mentioned particular implementation is not limited to, wherein the equipment and structure be not described in detail to the greatest extent should
It is interpreted as being practiced with the common mode in this area；It is any to be familiar with those skilled in the art
Member, without departing from the scope of the technical proposal of the invention, all using the method for the disclosure above
Many possible variations and modification are made to technical solution of the present invention with technology contents, or are revised as
The equivalent embodiment of equivalent variations, this has no effect on the substantive content of the present invention.Therefore, it is every
Without departing from the content of technical solution of the present invention, the technical spirit according to the present invention is to above example
Any simple modifications, equivalents, and modifications done, still fall within technical solution of the present invention guarantor
In the range of shield.
Claims (10)
1. a kind of OLED display, it is characterised in that including:
Substrate；
Electron transfer layer, is arranged on the substrate；
Cathode layer, is arranged on the electron transfer layer；And
Activation of cathode layer, is arranged between the electron transfer layer and the cathode layer, and with
The cathode layer is at least partly contacted, and the metal oxide of the negative electrode layer surface is reduced to
Metal.
2. the OLED display described in claim 1, it is characterised in that the negative electrode
The material of active layer is the material with activation of cathode effect layer, to enter to the metal oxide
While row reduction, absorb and store oxygen.
3. OLED display as claimed in claim 2, it is characterised in that the tool
The material for having activation of cathode effect layer is C60Or CeO2。
4. OLED display as claimed in claim 1, it is characterised in that described the moon
The thickness of pole active layer is 1nm~5nm.
5. OLED display as claimed in claim 1, it is characterised in that described the moon
The material of pole layer is Mg, Ag, AL or ytterbium.
6. OLED display as claimed in claim 1, it is characterised in that the OLED
Display device also includes：Anode layer, is arranged between the substrate and the electron transfer layer；
Hole transmission layer, is arranged between the anode layer and the electron transfer layer；
Luminescent layer, the luminescent layer be arranged on the electron transfer layer and the hole transmission layer it
Between；And
Encapsulated layer, is arranged on the cathode layer.
7. OLED display as claimed in claim 6, it is characterised in that described
OLED display also includes：
Hole injection layer, is arranged between the anode layer and the hole transmission layer；
Electron injecting layer, is arranged between the electron transfer layer and activation of cathode layer.
8. OLED display as claimed in claim 6, it is characterised in that the sun
Pole layer is composite membrane.
9. OLED display as claimed in claim 8, it is characterised in that described multiple
Close tin indium oxide/Ag/ tin indium oxides that film includes stacking gradually.
10. OLED display as claimed in claim 1, it is characterised in that the electricity
The material of sub- transport layer is 1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610087521.4A CN107086228B (en) | 2016-02-16 | 2016-02-16 | A kind of OLED display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610087521.4A CN107086228B (en) | 2016-02-16 | 2016-02-16 | A kind of OLED display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107086228A true CN107086228A (en) | 2017-08-22 |
| CN107086228B CN107086228B (en) | 2019-11-22 |
Family
ID=59614088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610087521.4A Active CN107086228B (en) | 2016-02-16 | 2016-02-16 | A kind of OLED display |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107086228B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109546001A (en) * | 2018-11-22 | 2019-03-29 | 京东方科技集团股份有限公司 | A kind of display panel and preparation method thereof, display device |
| CN109994643A (en) * | 2018-01-02 | 2019-07-09 | 京东方科技集团股份有限公司 | Organic light-emitting diode device and method for manufacturing the same, display substrate, and display device |
| CN115411198A (en) * | 2021-05-27 | 2022-11-29 | Tcl科技集团股份有限公司 | Light emitting device and method of manufacturing the same |
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| CN109546001B (en) * | 2018-11-22 | 2021-02-26 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and display device |
| CN115411198A (en) * | 2021-05-27 | 2022-11-29 | Tcl科技集团股份有限公司 | Light emitting device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107086228B (en) | 2019-11-22 |
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Address after: 201506, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201506, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: EverDisplay Optronics (Shanghai) Ltd. |
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