CN103427024A - Organic light-emitting device and preparation method thereof - Google Patents
Organic light-emitting device and preparation method thereof Download PDFInfo
- Publication number
- CN103427024A CN103427024A CN2012101472123A CN201210147212A CN103427024A CN 103427024 A CN103427024 A CN 103427024A CN 2012101472123 A CN2012101472123 A CN 2012101472123A CN 201210147212 A CN201210147212 A CN 201210147212A CN 103427024 A CN103427024 A CN 103427024A
- Authority
- CN
- China
- Prior art keywords
- layer
- hole transmission
- evaporation
- doping
- transmission layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
An embodiment of the invention discloses an organic light-emitting device. The organic light-emitting device comprises an anode substrate, a quantum well layer, an electron transport layer, an electron injection layer and a cathode. The quantum well layer comprises at least two layers of p-type doping hole transporting layers stacked in sequence and light-emitting layers arranged between the two layers of adjacent p-type doping hole transporting layers, the p-type doping hole transporting layers are made of a mixed material formed by hole transporting material doping p-type materials, and the p-type materials are 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane and 4,4,4-tri (naphthyl-1-phenyl-ammonium) triphenylamine or 4,4,4-tri (naphthyl-1-phenyl-ammonium) triphenylamine. In addition, the embodiment of the invention further discloses a preparation method of the organic light-emitting device. According to the organic light-emitting device, the hole and electron recombination probability is effectively improved by adjusting the hole transmission speed, and the goal of improving light-emitting efficiency is achieved finally.
Description
Technical field
The present invention relates to the electronic device association area, relate in particular to a kind of organic electroluminescence device and preparation method thereof.
Background technology
1987, the C.W.Tang of U.S. Eastman Kodak company and VanSlyke reported the breakthrough in organic electroluminescent research.They utilize the ultrathin film technology to prepare high brightness, high efficiency double-deck organic electroluminescence device (OLED).In this double-deck device, under 10V, brightness reaches 1000cd/m
2, its luminous efficiency is 1.51lm/W, life-span to be greater than 100 hours.
The principle of luminosity of OLED is based under the effect of extra electric field, and electronics is injected into the lowest unocccupied molecular orbital (LUMO) of organic material compound from negative electrode, and hole is injected into the highest occupied molecular orbital (HOMO) of organic material compound from anode.Electronics and hole meet at luminescent layer, compound, form exciton, exciton moves under electric field action, and energy is passed to luminescent material, and excitation electron is from the ground state transition to excitation state, excited energy, by Radiation-induced deactivation, produces photon, discharges luminous energy.
In traditional luminescent device, hole transport speed is generally high two more than the order of magnitude than electric transmission speed, this just makes hole accumulate in a large number at light-emitting zone, and number of electrons is less, finally cause the recombination probability of hole and electronics greatly to reduce, recombination region changes, and chromaticity coordinates is changed, and color rendering is poor.Therefore, in order effectively to improve the recombination probability of hole and electronics, improve the luminous efficiency of luminescent device, but provide a kind of organic electroluminescence device with Effective Regulation hole transport speed to become very important.
Summary of the invention
Embodiment of the present invention technical problem to be solved is, a kind of organic electroluminescence device and preparation method thereof is provided, by the p hole transmission layer regulation and control hole transport speed of adulterating, effectively improve the recombination probability of hole and electronics, finally reach the purpose that improves luminous efficiency.
The embodiment of the present invention provides a kind of organic electroluminescence device, comprise: anode substrate, quantum well layer, electron transfer layer, electron injecting layer and negative electrode, described quantum well layer comprises at least two-layer p doping hole transmission layer stacked gradually and is arranged at the luminescent layer between adjacent two-layer p doping hole transmission layer, the material of described p doping hole transmission layer is the composite material that hole mobile material doped p type material forms, described p-type material is 2, 3, 5, 6-tetrafluoro-7, 7, 8, 8,-four cyano-benzoquinone's bismethane, 4, 4, 4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine or 4, 4, 4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine.
Preferably, the number of plies of luminescent layer is to be more than or equal to 1 and be less than or equal to 6 integer.
Quantum well layer is to be arranged alternately by p doping hole transmission layer and luminescent layer the structure with n+1 p doping hole transmission layer and n luminescent layer formed, wherein, 1≤n≤6, n is integer.In quantum well structure, p doping hole transmission layer is potential barrier, luminescent layer is potential well, p doping hole transmission layer and luminescent layer are arranged alternately, the one p doping hole transmission layer is arranged on anode substrate, on n+1p doping hole transmission layer, electron transfer layer is set, luminescent layer is arranged between adjacent two p doping hole transmission layer.
When n=1, the structure of quantum well layer is: p doping hole transmission layer/luminescent layer/p hole transmission layer that adulterates.
When n=2, the structure of quantum well layer is: p doping hole transmission layer/luminescent layer/p doping hole transmission layer/luminescent layer/p hole transmission layer that adulterates.
Excessive when the value of n, can make the thickness of quantum well layer excessive, thereby affect the effect of hole transport, be unfavorable for improving the luminous efficiency of luminescent device, so n should get suitable value, in the present invention, 1≤n≤6, n is integer.
In the material of p doping hole transmission layer, hole mobile material is main body, and the p-type material is object.
Preferably, hole mobile material is 4,4', 4 " tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA), N, N '-bis-(3-aminomethyl phenyl)-N, N '-diphenyl-4; 4 '-benzidine (TPD) or N; N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB).
Preferably, in the material of p doping hole transmission layer, the doping mass fraction of p-type material is 1 ~ 10%.
Preferably, the material of luminescent layer is rubrene (rubrene), 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 4-(dintrile methylene fork)-2-methyl-6-(4-dimethylamino-styrene)-4H-pyrans (DCM) or 4-(dicyano methylene)-2-methyl-6-(tetrahydrochysene-1,1,7,7-tetramethyl-1H, 5H-benzoquinolizine-9-yl) vinyl-4H-pyrans (DCJT).
The material of luminescent layer is red light material, and red light material, because energy gap is narrower, is suitable as the potential well of quantum well, and the exciton that can limit hole and electron recombination formation is luminous in luminescent layer.
Preferably, the thickness of p doping hole transmission layer is 2 ~ 20nm/ layer, and the thickness of luminescent layer is 2 ~ 20nm/ layer.
The p-type material is 2,3,5,6-tetrafluoro-7,7,8,8 ,-four cyano-benzoquinone's bismethane (F4-TCNQ), 4,4,4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine (1T-NATA) or 4,4,4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine (2T-NATA).
Wherein, in hole mobile material, can make the transmission rate in the hole passed through faster adding of p-type material here, is conducive to the transmission in hole, so p doping hole transmission layer can be used as the potential barrier in quantum well structure.Can effectively stop to hole (hole is transmitted through the HOMO energy level), by the variation of construction unit, can effectively be regulated and controled hole transport speed; The material of luminescent layer is red emitting material, because the red emitting material energy gap is narrower, energy gap, between 2.5eV-2.0eV, can be used as the potential well of quantum well, can improve hole transport speed, when hole transport arrives this layer, transmission rate obviously improves, and has reduced the cancellation probability of hole in quantum well, simultaneously, also effectively reduce the probability of hole and electronics recombination luminescence in quantum well, improve the colorimetric purity of ruddiness.Therefore, quantum well layer can accelerate not to be blocked the transmission rate in hole in blocking hole, thereby, by regulation and control hole transport speed, has effectively improved the recombination probability of hole and electronics, finally reaches the purpose that improves luminous efficiency.
Preferably, described anode substrate is indium tin oxide glass (ITO), mixes the zinc oxide glass (AZO) of aluminium or mix the zinc oxide glass (IZO) of indium.
Preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (as TAZ) or N-aryl benzimidazole (TPBI); More preferably, the material of electron transfer layer is N-aryl benzimidazole (TPBI).
Preferably, the thickness of electron transfer layer is 40 ~ 80nm; More preferably, the thickness of electron transfer layer is 50nm.
Preferably, the material of electron injecting layer is cesium carbonate (Cs
2CO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) or lithium fluoride (LiF); More preferably, the material of electron injecting layer is lithium fluoride (LiF).
Preferably, the thickness of electron injecting layer is 0.5 ~ 10nm; More preferably, the thickness of electron injecting layer is 1nm.
Preferably, negative electrode is silver (Ag), aluminium (Al), platinum (Pt) or gold (Au); More preferably, negative electrode is silver (Ag).
Preferably, the thickness of negative electrode is 80 ~ 300nm; More preferably, the thickness of negative electrode is 100nm.
Wherein, electron transfer layer is arranged on the n+1p doping hole transmission layer of quantum well layer, and electron injecting layer is arranged on electron transfer layer, and negative electrode is arranged on electron injecting layer.
When n=1, the structure of organic electroluminescence device of the present invention is: anode/p doping hole transmission layer/luminescent layer/p hole transmission layer/electron transfer layer/electron injecting layer/negative electrode that adulterates.
Correspondingly, the embodiment of the present invention also provides a kind of preparation method of organic electroluminescence device, comprises the following steps:
Clean anode substrate is provided;
Carry out the evaporation of quantum well layer on the anode substrate of treated mistake, elder generation is evaporation p doping hole transmission layer on described anode substrate, evaporation luminescent layer on described p doping hole transmission layer, again described luminous on evaporation p doping hole transmission layer, replace according to this described quantum well layer that evaporation obtains comprising at least two-layer p doping hole transmission layer stacked gradually and is arranged at the luminescent layer between adjacent two-layer p doping hole transmission layer, the material of described p doping hole transmission layer is the composite material that hole mobile material doped p type material forms, described p-type material is 2, 3, 5, 6-tetrafluoro-7, 7, 8, 8,-four cyano-benzoquinone's bismethane, 4, 4, 4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine and 4, 4, 4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine,
Evaporation electron transfer layer, electron injecting layer and metallic cathode successively on described quantum well layer.
Particularly, the clean operation of anode substrate is: anode substrate is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol.Remove the organic pollution of glass surface, in addition, also can carry out oxygen plasma treatment to the anode substrate after cleaning up, the processing time is 5min, and power is 30W.Oxygen plasma treatment is the anode substrate surface smoothly, and the anode substrate evenness is strengthened, and improves work function (approximately improving 0.1 ~ 0.3eV), and the hole injectability is strengthened, and reduces starting resistor.
Preferably, anode substrate is indium tin oxide glass (ITO), mixes the zinc oxide glass (AZO) of aluminium or mix the zinc oxide glass (IZO) of indium.
Preferably, the number of plies of luminescent layer is to be more than or equal to 1 and be less than or equal to 6 integer
Quantum well layer is to consist of n+1 p doping hole transmission layer and n luminescent layer, 1≤n≤6, n is integer, p doping hole transmission layer is potential barrier, luminescent layer is potential well, and p doping hole transmission layer and luminescent layer are arranged alternately, and a p doping hole transmission layer is arranged on anode substrate, on n+1p doping hole transmission layer, electron transfer layer is set, luminescent layer is arranged between adjacent two p doping hole transmission layer.
When n=1, the structure of quantum well layer is: p doping hole transmission layer/luminescent layer/p hole transmission layer that adulterates.
When n=2, the structure of quantum well layer is: p doping hole transmission layer/luminescent layer/p doping hole transmission layer/luminescent layer/p hole transmission layer that adulterates.
In the material of p doping hole transmission layer, hole mobile material is main body, and the p-type material is object.
Preferably, hole mobile material is 4,4', 4 " tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA), N, N '-bis-(3-aminomethyl phenyl)-N, N '-diphenyl-4; 4 '-benzidine (TPD) or N; N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB).
Preferably, in the material of p doping hole transmission layer, the doping mass fraction of p-type material is 1 ~ 10%.
The p-type material is 2,3,5,6-tetrafluoro-7,7,8,8 ,-four cyano-benzoquinone's bismethane (F4-TCNQ), 4,4,4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine (1T-NATA) or 4,4,4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine (2T-NATA).
Preferably, the material of luminescent layer is rubrene (rubrene), 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 4-(dintrile methylene fork)-2-methyl-6-(4-dimethylamino-styrene)-4H-pyrans (DCM) or 4-(dicyano methylene)-2-methyl-6-(tetrahydrochysene-1,1,7,7-tetramethyl-1H, 5H-benzoquinolizine-9-yl) vinyl-4H-pyrans (DCJT).
Preferably, the thickness of p doping hole transmission layer is 2 ~ 20nm/ layer, and the thickness of luminescent layer is 2 ~ 20nm/ layer.
P doping hole transmission layer and luminescent layer adopt the mode of evaporation to prepare.
Preferably, the evaporation temperature is 100 ~ 500 ℃, and vacuum degree is 1 * 10
-3～1 * 10
-5Pa.
Evaporation electron transfer layer, electron injecting layer and metallic cathode successively on quantum well layer.Particularly, evaporation electron transfer layer on n+1p doping hole transmission layer, evaporation electron injecting layer on electron transfer layer, evaporation negative electrode on electron injecting layer.
When n=1, the structure of organic electroluminescence device of the present invention is: anode/p doping hole transmission layer/luminescent layer/p hole transmission layer/electron transfer layer/electron injecting layer/negative electrode that adulterates.
Preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (as TAZ) or N-aryl benzimidazole (TPBI); More preferably, the material of electron transfer layer is N-aryl benzimidazole (TPBI).
Preferably, the thickness of electron transfer layer is 40 ~ 80nm; More preferably, the thickness of electron transfer layer is 50nm.
Preferably, the material of electron injecting layer is cesium carbonate (Cs
2CO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) or lithium fluoride (LiF); More preferably, the material of electron injecting layer is lithium fluoride (LiF).
Preferably, the thickness of electron injecting layer is 0.5 ~ 10nm; More preferably, the thickness of electron injecting layer is 1nm.
Preferably, the evaporation of electron transfer layer and electron injecting layer is vacuum evaporation, and the evaporation temperature is 100 ~ 500 ℃, and vacuum degree is 1 * 10
-3～1 * 10
-5Pa.
Preferably, negative electrode is silver (Ag), aluminium (Al), platinum (Pt) or gold (Au); More preferably, negative electrode is silver (Ag).
Preferably, the thickness of negative electrode is 80 ~ 300nm; More preferably, the thickness of negative electrode is 100nm.
Preferably, the evaporation of negative electrode is vacuum evaporation, and the evaporation temperature is 500 ~ 1000 ℃, and vacuum degree is 1 * 10
-3~ 1 * 10
-5Pa.
Wherein, electron transfer layer is arranged on the n+1p doping hole transmission layer of quantum well layer, and electron injecting layer is arranged on electron transfer layer, and negative electrode is arranged on electron injecting layer.
Implement the embodiment of the present invention, there is following beneficial effect:
(1) p doped quantum well organic electroluminescence device provided by the invention, the potential barrier of its quantum well is p doping hole transmission layer, can effectively stop to hole (hole is transmitted through the HOMO energy level), by the variation of construction unit, can effectively be regulated and controled hole transport speed;
(2) potential well of quantum well is red light luminescent layer, can limit hole and electron recombination luminous in luminescent layer, avoided the probability of hole and electronics recombination luminescence in quantum well, luminescent device has finally been reached and improve luminous efficiency and the purpose that improves red light color purity.
The accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, below will the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structure chart of the organic electroluminescence device that provides of the embodiment of the present invention 1;
Fig. 2 is organic electroluminescence device and the brightness of existing organic electroluminescence device and the graph of a relation of luminous efficiency that the embodiment of the present invention 1 provides.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making under the creative work prerequisite the every other embodiment obtained, belong to the scope of protection of the invention.
Embodiment 1
A kind of preparation method of organic electroluminescence device comprises the following steps:
(1) ITO is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal glass surface, carry out oxygen plasma treatment to the anode substrate after cleaning up, processing time is 5min, and power is 30W;
(2) carry out the evaporation of quantum well layer on the anode substrate of processing through (1), evaporation the one p doping hole transmission layer on anode substrate, evaporation the first luminescent layer on a p doping hole transmission layer, evaporation p doping hole transmission layer on the first luminescent layer, evaporation the second luminescent layer on the 2nd p doping hole transmission layer, evaporation the 3rd p doping hole transmission layer on the second luminescent layer, quantum well layer comprises first, second, third p doping hole transmission layer and first, second luminescent layer.
Particularly, in the present embodiment, the material of p doping hole transmission layer is the composite material (m-MTDATA:F4-TCNQ) that m-MTDATA doped F 4-TCNQ forms, the doping mass fraction of F4-TCNQ is 2%, the material of luminescent layer is red light material DCM, quantum well layer comprises three layers of p doping hole transmission layer (m-MTDATA:F4-TCNQ) and two-layer luminescent layer (DCM), concrete structure is: m-MTDATA:F4-TCNQ(2wt%)/DCM/m-MTDATA:F4-TCNQ(2wt%) DCM/m-MTDATA:F4-TCNQ(2wt%) (n=2), the thickness in monolayer of m-MTDATA:F4-TCNQ layer is 10nm, the thickness in monolayer of luminescent layer (DCM) layer is 15nm.The evaporation of luminescent layer and p doping hole transmission layer is vacuum evaporation, and the evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5Pa.
(3) evaporation electron transfer layer, electron injecting layer and negative electrode successively on quantum well layer, obtain organic electroluminescence device.The evaporation of electron transfer layer and electron injecting layer is vacuum evaporation, and the evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5Pa.The evaporation of negative electrode is vacuum evaporation, and the evaporation temperature is 800 ℃, and vacuum degree is 1 * 10
-4Pa.
Wherein, the material of electron transfer layer is TPBi, and thickness is 50nm; The material of electron injecting layer is lithium fluoride (LiF), and thickness is 2nm; Negative electrode is silver (Ag), and thickness is 150nm.
Fig. 1 is the structural representation of the organic electroluminescence device of the present embodiment.As shown in Figure 1, the structure of this organic electroluminescence device comprises, anode conducting substrate 10, quantum well layer 20, electron transfer layer 30, electron injecting layer 40 and negative electrode 50.Wherein, quantum well layer 20, comprise three layers of p doping hole transmission layer (m-MTDATA:F4-TCNQ) 21 and two-layer luminescent layer (DCM) 22, its structure is m-MTDATA:F4-TCNQ(2wt%)/DCM/m-MTDATA:F4-TCNQ(2wt%)/DCM/m-MTDATA:F4-TCNQ(2wt%).The structure of this organic electroluminescence device is: ito glass/m-MTDATA:F4-TCNQ(2wt%)/DCM/m-MTDATA:F4-TCNQ(2wt%)/DCM/m-MTDATA:F4-TCNQ(2wt%)/TPBi/LiF/Ag.
Fig. 2 is organic electroluminescence device and the brightness of existing luminescent device and the graph of a relation of luminous efficiency of the present embodiment.Wherein, the brightness that curve 1 is the present embodiment organic electroluminescence device and the graph of a relation of luminous efficiency; Curve 2 is the brightness of existing organic electroluminescence device and the graph of a relation of luminous efficiency.Wherein, the structure of existing luminescent device is: ito glass/m-MTDATA:F4-TCNQ/DCM/TPBi/LiF/Ag.
As can see from Figure 2, under different brightness, the luminous efficiency of the present embodiment organic electroluminescence device is all than having the large of organic electroluminescence device now, and its maximum luminous efficiency is 22.5lm/W, and that existing organic electroluminescence device is only 16.9lm/W.This explanation, the quantum well layer formed by p doping hole transmission layer and luminescent layer, the hole transport speed that can make not to be blocked and pass through smoothly further improves, can concentrate in luminescent layer luminous with electron recombination, and red light material is narrower due to energy gap, be suitable as the quantum well potential well, can confinement exciton (hole and electron recombination) luminous in luminescent layer, when improving luminous efficiency, improve colorimetric purity.
Embodiment 2
A kind of preparation method of organic electroluminescence device comprises the following steps:
(1) IZO is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal glass surface, carry out oxygen plasma treatment to the anode conducting substrate after cleaning up, processing time is 5min, and power is 30W;
(2) carry out the evaporation of quantum well layer in the anode conducting substrate of processing through (1), evaporation the one p doping hole transmission layer in the anode conducting substrate, evaporation one deck luminescent layer on a p doping hole transmission layer, evaporation the 2nd p doping hole transmission layer on luminescent layer subsequently, quantum well layer comprises first, second p doping hole transmission layer and luminescent layer.
Wherein, in the present embodiment, the material of p doping hole transmission layer is the composite material (TPD:1T-NATA) that TPD doping 1T-NATA forms, the doping mass fraction of 1T-NATA is 1%, the material of luminescent layer is red light material rubrene, quantum well layer comprises two-layer p doping hole transmission layer (TPD:1T-NATA) and two-layer luminescent layer (rubrene), concrete structure is: (TPD:1T-NATA) (10wt%)/rubrene/(TPD:1T-NATA) (10wt%) (n=1), (TPD:1T-NATA) thickness in monolayer of layer is 10nm, the thickness in monolayer of luminescent layer (rubrene) is 20nm.The evaporation of luminescent layer and p doping hole transmission layer is vacuum evaporation, and the evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5Pa.
(3) evaporation electron transfer layer, electron injecting layer and negative electrode successively on quantum well layer, obtain organic electroluminescence device.The evaporation of electron transfer layer and electron injecting layer is vacuum evaporation, and the evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5Pa.The evaporation of negative electrode is vacuum evaporation, and the evaporation temperature is 800 ℃, and vacuum degree is 1 * 10
-4Pa.
Wherein, the material of electron transfer layer is TAZ, and thickness is 80nm; The material of electron injecting layer is cesium fluoride CsF, and thickness is 0.5nm; Negative electrode is Al, and thickness is 300nm.
The structure of the organic electroluminescence device that the present embodiment provides is: (the 10wt%)/rubrene/(TPD:1T-NATA of IZO glass/(TPD:1T-NATA)) (10wt%)/TAZ/CsF/Al, its maximum luminous efficiency is 17.1lm/W.
Embodiment 3
A kind of preparation method of organic electroluminescence device comprises the following steps:
(1) ITO is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal glass surface, carry out oxygen plasma treatment to the anode substrate after cleaning up, processing time is 5min, and power is 30W;
(2) carry out the quantum well layer evaporation on the anode substrate of processing through (2), evaporation the one p doping hole transmission layer in the anode conducting substrate, evaporation the first luminescent layer on a p doping hole transmission layer, evaporation the 2nd p doping hole transmission layer on the first luminescent layer, evaporation the second luminescent layer on the 2nd p doping hole transmission layer, evaporation the 3rd p doping hole transmission layer on the second luminescent layer, evaporation the 3rd luminescent layer on the 3rd p doping hole transmission layer, evaporation the 4th p doping hole transmission layer on the 3rd luminescent layer, evaporation the 4th luminescent layer on the 4th p doping hole transmission layer, evaporation the 5th p doping hole transmission layer on the 4th luminescent layer, evaporation the 5th luminescent layer on the 5th p doping hole transmission layer, evaporation the 6th p doping hole transmission layer on the 5th luminescent layer, the p doped quantum well structures comprises first, second, the 3rd, the 4th, the 5th, the 6th p doping hole transmission layer and first, second, the 3rd, the 4th, the 5th luminescent layer.
Wherein, in the present embodiment, the material of p doping hole transmission layer is the composite material (NPB:2T-NATA) that NPB doping 2T-NATA forms, and the doping mass fraction of 2T-NATA is 10%, and the material of luminescent layer is red light material DCJTB.Quantum well layer comprises six layers of p doping hole transmission layer (NPB:2T-NATA) and five layers of luminescent layer (DCJTB), concrete structure is: (NPB:2T-NATA) (10wt%)/(DCJTB)/(NPB:2T-NATA) (10wt%)/(DCJTB)/(NPB:2T-NATA) (10wt%)/(DCJTB)/(NPB:2T-NATA) (10wt%)/(DCJTB)/(NPB:2T-NATA) (10wt%)/(DCJTB) (NPB:2T-NATA) (10wt%) (n=5), the thickness in monolayer of NPB:2T-NATA layer is 20nm, and the thickness in monolayer of luminescent layer DCJTB is 2nm.The evaporation of luminescent layer and p doping hole transmission layer is vacuum evaporation, and the evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5Pa.
(3) evaporation electron transfer layer, electron injecting layer and negative electrode successively on quantum well layer, obtain organic electroluminescence device.The evaporation of electron transfer layer and electron injecting layer is vacuum evaporation, and the evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5Pa.The evaporation of negative electrode is vacuum evaporation, and the evaporation temperature is 800 ℃, and vacuum degree is 1 * 10
-4Pa.
Wherein, the material of electron transfer layer is Bphen, and thickness is 40nm; The material of electron injecting layer is nitrine caesium CsN
3, thickness is 5nm; Negative electrode is Au, and thickness is 80nm.
The structure of the organic electroluminescence device that the present embodiment provides is: (10wt%)/(DCJTB)/(NPB:2T-NATA) (10wt%)/(DCJTB)/(NPB:2T-NATA) (10wt%)/(DCJTB)/(NPB:2T-NATA) (10wt%)/(DCJTB)/(NPB:2T-NATA) (10wt%)/(DCJTB)/(NPB:2T-NATA) (the 10wt%)/Bphen/CsN of ito glass/(NPB:2T-NATA)
3/ Au, its maximum luminous efficiency is 20.6lm/W.
A kind of preparation method of organic electroluminescence device comprises the following steps:
(1) AZO is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal glass surface, carry out oxygen plasma treatment to the anode substrate after cleaning up, processing time is 5min, and power is 30W;
(2) carry out the quantum well layer evaporation on the anode substrate of processing through (1), evaporation the one p doping hole transmission layer in the anode conducting substrate, evaporation the first luminescent layer on a p doping hole transmission layer, evaporation the 2nd p doping hole transmission layer on the first luminescent layer, evaporation the second luminescent layer on the 2nd p doping hole transmission layer, evaporation the 3rd p doping hole transmission layer on the second luminescent layer, quantum well layer comprises first, second, third p doping hole transmission layer and first, second luminescent layer.
Particularly, in the present embodiment, the material of p doping hole transmission layer is the composite material (NPB:F4-TCNQ) that NPB doped F 4-TCNQ forms, the doping mass fraction of F4-TCNQ is 1.5%, the material of luminescent layer is red emitting material DCJT, quantum well layer comprises three layers of p doping hole transmission layer and two-layer luminescent layer (DCJT), concrete structure is: (NPB:F4-TCNQ) (1.5wt%)/DCJT/(NPB:F4-TCNQ) (1.5wt%)/DCJT/(NPB:F4-TCNQ) (1.5wt%) (n=2), (NPB:F4-TCNQ) thickness in monolayer of layer is 5nm, the thickness in monolayer of luminescent layer (DCJT) layer is 5nm.The evaporation of luminescent layer and p doping hole transmission layer is vacuum evaporation, and the evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5Pa.
(3) evaporation electron transfer layer, electron injecting layer and negative electrode successively on quantum well layer, obtain organic electroluminescence device.The evaporation of electron transfer layer and electron injecting layer is vacuum evaporation, and the evaporation temperature is 400 ℃, and vacuum degree is 1 * 10
-5Pa.The evaporation of negative electrode is vacuum evaporation, and the evaporation temperature is 800 ℃, and vacuum degree is 1 * 10
-4Pa.
Wherein, the material of electron transfer layer is TAZ, and thickness is 70nm; The material of electron injecting layer is cesium carbonate Cs
2CO
3, thickness is 2nm; Negative electrode is Pt, and thickness is 90nm.
The structure of the organic electroluminescence device that the present embodiment provides is: (the 1.5wt%)/DCJT/(NPB:F4-TCNQ of AZO glass/(NPB:F4-TCNQ)) (1.5wt%)/DCJT/(NPB:F4-TCNQ) (1.5wt%)/TAZ/Cs
2CO
3/ Pt, its maximum luminous efficiency is 21lm/W.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also are considered as protection scope of the present invention.
Claims (10)
1. an organic electroluminescence device, it is characterized in that, comprise: anode substrate, quantum well layer, electron transfer layer, electron injecting layer and negative electrode, described quantum well layer comprises at least two-layer p doping hole transmission layer stacked gradually and is arranged at the luminescent layer between adjacent two-layer p doping hole transmission layer, the material of described p doping hole transmission layer is the composite material that hole mobile material doped p type material forms, described p-type material is 2, 3, 5, 6-tetrafluoro-7, 7, 8, 8,-four cyano-benzoquinone's bismethane, 4, 4, 4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine or 4, 4, 4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine.
2. organic electroluminescence device as claimed in claim 1, it is characterized in that, the material of described luminescent layer is rubrene, 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 4-(dintrile methylene fork)-2-methyl-6-(4-dimethylamino-styrene)-4H-pyrans or 4-(dicyano methylene)-2-methyl-6-(tetrahydrochysene-1,1,7,7-tetramethyl-1H, 5H-benzoquinolizine-9-yl) vinyl-4H-pyrans.
3. organic electroluminescence device as claimed in claim 1, it is characterized in that, described hole mobile material is 4,4', 4 " tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine, N; N '-bis-(3-aminomethyl phenyl)-N; N '-diphenyl-4,4 '-benzidine or N, N '-(1-naphthyl)-N; N '-diphenyl-4,4 '-benzidine.
4. organic electroluminescence device as claimed in claim 1, is characterized in that, in the material of described p doping hole transmission layer, the doping mass fraction of described p-type material is 1 ~ 10%.
5. organic electroluminescence device as claimed in claim 1, is characterized in that, the thickness of described p doping hole transmission layer is 2 ~ 20nm/ layer, and the thickness of described luminescent layer is 2 ~ 20nm/ layer, and the number of plies of described luminescent layer is to be more than or equal to 1 and be less than or equal to 6 integer.
6. the preparation method of an organic electroluminescence device, is characterized in that, comprises the following steps:
Clean anode substrate is provided;
Carry out the evaporation of quantum well layer on the anode substrate of treated mistake, elder generation is evaporation p doping hole transmission layer on described anode substrate, evaporation luminescent layer on described p doping hole transmission layer, evaporation p doping hole transmission layer on described luminescent layer again, replace according to this described quantum well layer that evaporation obtains comprising at least two-layer p doping hole transmission layer stacked gradually and is arranged at the luminescent layer between adjacent two-layer p doping hole transmission layer, the material of described p doping hole transmission layer is the composite material that hole mobile material doped p type material forms, described p-type material is 2, 3, 5, 6-tetrafluoro-7, 7, 8, 8,-four cyano-benzoquinone's bismethane, 4, 4, 4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine and 4, 4, 4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine,
Evaporation electron transfer layer, electron injecting layer and metallic cathode successively on described quantum well layer.
7. the preparation method of organic electroluminescence device as claimed in claim 6, it is characterized in that, the material of described luminescent layer is rubrene, 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 4-(dintrile methylene fork)-2-methyl-6-(4-dimethylamino-styrene)-4H-pyrans or 4-(dicyano methylene)-2-methyl-6-(tetrahydrochysene-1,1,7,7-tetramethyl-1H, 5H-benzoquinolizine-9-yl) vinyl-4H-pyrans.
8. the preparation method of organic electroluminescence device as claimed in claim 6, it is characterized in that, described hole mobile material is 4,4', 4 " tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine, N; N '-bis-(3-aminomethyl phenyl)-N; N '-diphenyl-4,4 '-benzidine or N, N '-(1-naphthyl)-N; N '-diphenyl-4,4 '-benzidine.
9. the preparation method of organic electroluminescence device as claimed in claim 6, is characterized in that, in the material of described p doping hole transmission layer, the doping mass fraction of described p-type material is 1 ~ 10%.
10. the preparation method of organic electroluminescence device as claimed in claim 6, it is characterized in that, the thickness of described p doping hole transmission layer is 2 ~ 20nm/ layer, and the thickness of described luminescent layer is 2 ~ 20nm/ layer, and the number of plies of described luminescent layer is to be more than or equal to 1 and be less than or equal to 6 integer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101472123A CN103427024A (en) | 2012-05-14 | 2012-05-14 | Organic light-emitting device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101472123A CN103427024A (en) | 2012-05-14 | 2012-05-14 | Organic light-emitting device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103427024A true CN103427024A (en) | 2013-12-04 |
Family
ID=49651488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101472123A Pending CN103427024A (en) | 2012-05-14 | 2012-05-14 | Organic light-emitting device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103427024A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364635A (en) * | 2019-07-12 | 2019-10-22 | 南方科技大学 | Quantum dot light-emitting diode and preparation method thereof |
| CN112599676A (en) * | 2020-09-29 | 2021-04-02 | 湖南大学 | Organic ammonium salt p-type dopant |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1398146A (en) * | 2002-08-13 | 2003-02-19 | 清华大学 | Electroluminescent organic device |
| CN1663060A (en) * | 2002-05-24 | 2005-08-31 | 诺瓦莱德有限公司 | Phosphorescent light-emitting component comprising organic layers |
| JP2006332633A (en) * | 2005-04-28 | 2006-12-07 | Semiconductor Energy Lab Co Ltd | Light-emitting element, light-emitting device and method of manufacturing light-emitting element |
-
2012
- 2012-05-14 CN CN2012101472123A patent/CN103427024A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1663060A (en) * | 2002-05-24 | 2005-08-31 | 诺瓦莱德有限公司 | Phosphorescent light-emitting component comprising organic layers |
| CN1398146A (en) * | 2002-08-13 | 2003-02-19 | 清华大学 | Electroluminescent organic device |
| JP2006332633A (en) * | 2005-04-28 | 2006-12-07 | Semiconductor Energy Lab Co Ltd | Light-emitting element, light-emitting device and method of manufacturing light-emitting element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364635A (en) * | 2019-07-12 | 2019-10-22 | 南方科技大学 | Quantum dot light-emitting diode and preparation method thereof |
| CN112599676A (en) * | 2020-09-29 | 2021-04-02 | 湖南大学 | Organic ammonium salt p-type dopant |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103427045A (en) | Organic light-emitting device and preparation method thereof | |
| CN103427024A (en) | Organic light-emitting device and preparation method thereof | |
| CN104518150A (en) | Organic electroluminescent device and method for preparing same | |
| CN104183738A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103972420A (en) | Organic light-emitting device and method for manufacturing same | |
| CN103427031A (en) | Organic light-emitting device and preparation method thereof | |
| CN103682164A (en) | Organic light-emitting device and preparation method thereof | |
| CN103972421A (en) | Organic light-emitting device and production method thereof | |
| CN104518102A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103972400A (en) | Organic light-emitting device and method for manufacturing same | |
| CN104518147A (en) | Organic electroluminescent device and method for preparing same | |
| CN104051641A (en) | Laminated organic electroluminescent device and manufacturing method thereof | |
| CN104518108A (en) | Organic electroluminescent device and method for preparing same | |
| CN104638164A (en) | Organic light-emitting device and preparation method thereof | |
| CN103972408A (en) | Organic light-emitting device and method for manufacturing same | |
| CN104518148A (en) | Organic electroluminescent device and method for preparing same | |
| CN103137887A (en) | Electroluminescence component and preparation method of electroluminescence component | |
| CN103972404A (en) | Organic light-emitting device and production method thereof | |
| CN103972411A (en) | Organic light-emitting device and production method thereof | |
| CN104518140A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104518109A (en) | Organic electroluminescent device and method for preparing same | |
| CN103972403A (en) | Organic light-emitting device and production method thereof | |
| CN104124378A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103682109A (en) | Organic light-emitting device and preparation method thereof | |
| CN103972412A (en) | Organic light-emitting device and method for manufacturing same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131204 |