CN106972083B - Preparation method of epitaxial wafer of light-emitting diode - Google Patents
Preparation method of epitaxial wafer of light-emitting diode Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 230000004888 barrier function Effects 0.000 claims abstract description 49
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 21
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000872 buffer Substances 0.000 claims abstract description 14
- 230000006911 nucleation Effects 0.000 claims abstract 2
- 238000010899 nucleation Methods 0.000 claims abstract 2
- 239000000126 substance Substances 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000005693 optoelectronics Effects 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000011435 rock Substances 0.000 description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- JOTBHEPHROWQDJ-UHFFFAOYSA-N methylgallium Chemical compound [Ga]C JOTBHEPHROWQDJ-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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Abstract
本发明公开了一种发光二极管的外延片的制备方法，属于光电子技术领域。该制备方法包括提供一衬底，在衬底上依次生长缓冲层、成核层、未掺杂GaN层、N型层和有源层，其中，有源层采用下述方式生长：步骤1：停止向反应腔内通入三甲基镓，并向反应腔内通入三甲基铟，生长InGaN量子阱层；步骤2：停止向反应腔内通入三甲基铟，并向反应腔内通入三甲基镓，生长GaN量子垒层；通过利用反应腔内生长N型层或量子垒层时剩余的三甲基镓生长量子阱层，由于在生长量子阱层时只补充了三甲基铟，因此可以提高量子阱层中的In的组分，从而可以提高电子和空穴在有源层中复合的比例，提高发光二极管的发光效率。
The invention discloses a method for preparing an epitaxial wafer of a light-emitting diode, and belongs to the field of optoelectronic technology. The preparation method comprises providing a substrate, and sequentially growing a buffer layer, a nucleation layer, an undoped GaN layer, an N-type layer and an active layer on the substrate, wherein the active layer is grown in the following manner: step 1: stop introducing trimethylgallium into the reaction chamber, and introduce trimethylindium into the reaction chamber to grow an InGaN quantum well layer; step 2: stop introducing trimethylindium into the reaction chamber, and introduce trimethylgallium into the reaction chamber to grow a GaN quantum barrier layer; by using the remaining trimethylgallium when growing the N-type layer or the quantum barrier layer in the reaction chamber to grow the quantum well layer, since only trimethylindium is supplemented when growing the quantum well layer, the In component in the quantum well layer can be increased, thereby increasing the proportion of electrons and holes in the active layer, and improving the luminous efficiency of the light-emitting diode.
Description
Technical field
The present invention relates to photoelectron technical field, in particular to a kind of preparation method of the epitaxial wafer of light emitting diode.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) as great shadow in photoelectronic industry
Ring power new product, have the characteristics that small in size, long service life, various colors are colorful, low energy consumption, be widely used in illuminate,
The fields such as display screen, signal lamp, backlight, toy.
The light emitting region of epitaxial wafer is mainly active layer, when compound tense will give off light to electrons and holes in active layer
Line, and except active layer compound will not radius, therefore, can by improve electrons and holes it is compound in active layer
Ratio, to improve the luminous efficiency of light emitting diode.
The method of known raising electrons and holes ratio compound in active layer mainly passes through setting electricity at present
Sub- barrier layer, but still it is insufficient to allow the luminous efficiency of light emitting diode to meet various occasions only by setting electronic barrier layer
Needs.
Summary of the invention
Luminous efficiency in order to solve the problems, such as existing light emitting diode is low, and the embodiment of the invention provides one kind luminous two
The preparation method of the epitaxial wafer of pole pipe.The technical solution is as follows:
The embodiment of the invention provides a kind of preparation method of the epitaxial wafer of light emitting diode, the preparation method includes:
One substrate is provided；
Successively grown buffer layer, nucleating layer, layer of undoped gan over the substrate；
It is passed through trimethyl gallium into reaction chamber, grows N-type layer；
Active layer is grown in the N-type layer, wherein the active layer is grown using following manner:
Step 1: stop being passed through trimethyl gallium into the reaction chamber, and is passed through trimethyl indium into the reaction chamber, it is raw
Long InGaN quantum well layer；
Step 2: stop being passed through trimethyl indium into the reaction chamber, and is passed through trimethyl gallium into the reaction chamber, it is raw
Long GaN quantum barrier layer；
Repeat the above steps 1 and step 2, to form the active layer in the N-type layer；
Growing P-type layer on the active layer.
Preferably, described to stop being passed through trimethyl indium into the reaction chamber, and trimethyl is passed through into the reaction chamber
Gallium grows GaN quantum barrier layer, comprising:
Stop being passed through trimethyl indium into the reaction chamber, trimethyl gallium, N2 is passed through into the reaction chamber, described
One layer of GaN cap rock is grown on InGaN quantum well layer；
Continue to be passed through trimethyl gallium, N2 into the reaction chamber, while being passed through H2, one layer is grown on the GaN cap rock
GaN quantum builds sublayer.
Preferably, the growth temperature of GaN cap rock builds the growth temperature of sublayer lower than the GaN quantum of growth on it.
Further, when growing the GaN quantum base sublayer on the GaN cap rock, it is passed through the H2's and N2 of reaction chamber
The ratio between amount of substance is 1: 20~20: 1.
Preferably, the number of repeating said steps 1 and the step 2 is 8~20 times.
Preferably, the growth temperature of the InGaN quantum well layer is 620~750 DEG C.
Preferably, the growth temperature of the GaN quantum barrier layer is 700~900 DEG C.
Further, when preceding n times grow the GaN quantum barrier layer, the preparation method further include:
Silane is passed through into the reaction chamber, wherein n is less than total number of plies of the GaN quantum barrier layer.
Preferably, the growth thickness of the InGaN quantum well layer is 0.5~5nm.
Optionally, the growth thickness of the GaN quantum barrier layer is 8~15nm.
Technical solution provided in an embodiment of the present invention has the benefit that by the way that successively growth buffers on substrate
Layer, nucleating layer, layer of undoped gan, N-type layer and active layer, wherein when growing active layer, led to by stopping into reaction chamber
Enter trimethyl gallium, and be passed through trimethyl indium into reaction chamber, utilizes when reaction Intracavity N-type layer or quantum barrier layer remaining three
Methyl gallium grown quantum well layer be can be improved and be grown due to only supplementing trimethyl indium in grown quantum well layer
The component of In in quantum well layer, and the component of In is higher in quantum well layer, quantum well layer is stronger to the restriction effect of carrier,
So as to improving electrons and holes ratio compound in active layer, the luminous efficiency of light emitting diode is improved, simultaneously because
Remaining trimethyl gallium in reaction chamber is utilized, it is possible to reduce the consumption of trimethyl gallium advantageously reduces production cost.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of flow chart of the preparation method of the epitaxial wafer of light emitting diode provided in an embodiment of the present invention；
Fig. 2 is the flow chart of the preparation method of the epitaxial wafer of another light emitting diode provided in an embodiment of the present invention；
Fig. 3 is a kind of growth course schematic diagram of existing active layer；
Fig. 4 is a kind of growth course schematic diagram of active layer provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 is a kind of flow chart of the preparation method of the epitaxial wafer of light emitting diode provided in an embodiment of the present invention, such as Fig. 1
Shown, which includes:
S11: a substrate is provided.
S12: successively grown buffer layer, nucleating layer, layer of undoped gan on substrate.
S13: being passed through trimethyl gallium into reaction chamber, grows N-type layer.
S14: active layer is grown in N-type layer.
Specifically, step S14 includes:
Step 1: stopping being passed through trimethyl gallium into reaction chamber, and be passed through trimethyl indium into reaction chamber, grow InGaN amount
Sub- well layer.
Step 2: stopping being passed through trimethyl indium into reaction chamber, and be passed through trimethyl gallium into reaction chamber, grow GaN quantum
Barrier layer.
Repeat the above steps 1 and step 2, to form active layer in N-type layer.
S15: the growing P-type layer on active layer.
Pass through successively grown buffer layer, nucleating layer, layer of undoped gan, N-type layer and active layer on substrate, wherein in life
When long active layer, it is passed through trimethyl gallium into reaction chamber by stopping, and be passed through trimethyl indium into reaction chamber, utilizes reaction chamber
Remaining trimethyl gallium grown quantum well layer when interior growth N-type layer or quantum barrier layer, due to only being supplemented in grown quantum well layer
Trimethyl indium, therefore can be improved the component of the In in the quantum well layer grown, and the component of In is higher in quantum well layer,
Quantum well layer is stronger to the restriction effect of carrier, so as to improve electrons and holes ratio compound in active layer, mentions
The luminous efficiency of high light emitting diode, simultaneously because remaining trimethyl gallium in reaction chamber is utilized, it is possible to reduce trimethyl gallium
Consumption, advantageously reduce production cost.
Fig. 2 is the flow chart of the preparation method of the epitaxial wafer of another light emitting diode provided in an embodiment of the present invention, such as
Shown in Fig. 2, which includes:
S21: a substrate is provided.
When realization, which can be Sapphire Substrate, and Sapphire Substrate is a kind of very common substrate, preparation process
Maturation advantageously reduces production cost.
In the step s 21, Sapphire Substrate can be pre-processed.Specifically, first Sapphire Substrate can be heated
Annealing and nitrogen treatment 10 minutes are carried out to Sapphire Substrate to 1060 DEG C, then in hydrogen atmosphere.
S22: growing AIN buffer layer on substrate.
Optionally, the growth temperature for controlling buffer layer is 600 DEG C.
When realization, Sapphire Substrate can be placed in PVD, and (Physical Vapor Deposition, physical vapor are heavy
Product) in reaction chamber, by the temperature setting of reaction chamber at 600 DEG C.
Optionally, the buffer layer that growth thickness is 25nm on a sapphire substrate, since buffer layer does not adulterate, growth
The blocked up forward resistance that will increase epitaxial wafer of buffer layer thickness shortens the service life of epitaxial wafer so that forward voltage increases.
Preferably, step S22 can also include:
Buffer layer is made annealing treatment.
Specifically, the temperature of PVD reaction chamber is improved to 1060 DEG C and is annealed, annealing time can be 5 minutes.
S23: nucleating layer is grown on AlN buffer layer.
Optionally, the growth temperature of nucleating layer can be 1020 DEG C.
Specifically, the Sapphire Substrate that growth has buffer layer is placed in MOCVD (Meta1 Organic Chemical
Vapor Deposition, metallo-organic compound chemical gaseous phase deposition) in reaction chamber, 1020 DEG C are heated to, in pure hydrogen gas
The growth of nucleating layer is carried out in atmosphere.
Optionally, the growth pressure of nucleating layer can be 390~410torr.
Optionally, the growth thickness of nucleating layer can be 780~820nm.
S24: layer of undoped gan is grown on nucleating layer.
Optionally, the growth temperature of layer of undoped gan can be 1100 DEG C.
Optionally, the growth pressure of layer of undoped gan can be 590~610torr.
Optionally, the growth thickness of layer of undoped gan can be 1 μm.
S25: N-type layer is grown in layer of undoped gan.
Optionally, the growth rate of N-type layer can be 3.4 μm/h, and growth thickness can be 2.5 μm.
When realization, the pressure of reaction chamber is adjusted to 100torr, TMGa is continually fed into reaction chamber
(Trimethylgallium, trimethyl gallium), grows N-type layer under nitrogen and hydrogen mixture atmosphere.
Optionally, the ratio between amount of substance of hydrogen and nitrogen is 31: 10~40: 1.
S26: active layer is grown in N-type layer.
Specifically, the growth of active layer includes the growth of multilayer InGaN quantum well layer and the life of multilayer GaN quantum barrier layer
It is long.
Fig. 3 is a kind of growth course schematic diagram of existing active layer, and Fig. 4 is that one kind provided in an embodiment of the present invention is active
The growth course schematic diagram of layer, the section A indicates the growth of N-type layer in figure, and the section B indicates the growth of InGaN quantum well layer, the area C
Between indicate the growth of GaN quantum barrier layer, Δ t indicates the process of heating or cooling, and ON indicates to be passed through corresponding substance to reaction chamber
(TMGa or TMIn), OFF indicate to stop being passed through corresponding substance (TMGa or TMIn) to reaction chamber.Specifically here in connection with Fig. 4
The growth course of bright active layer, it should be noted that Fig. 4 illustrates only the life of 3 layers of InGaN quantum well layer and GaN quantum barrier layer
It is long, it is not offered as the active layer and centainly only includes 3 layers of InGaN quantum well layer and GaN quantum barrier layer.
When realization, the growth of InGaN quantum well layer may include:
Step 1: stopping being passed through TMGa into reaction chamber, and be continually fed into TMIn into reaction chamber
(Trimethylindium, trimethyl indium) grows InGaN quantum well layer.
Optionally, the growth temperature of InGaN quantum well layer can be 620~750 DEG C.
Optionally, the growth pressure of InGaN quantum well layer can be 300torr.
Preferably, the growth thickness of InGaN quantum well layer can be 0.5~5nm, if the thickness of quantum well layer is too thin,
The restriction effect to carrier can be reduced, if quantum well layer is too thick, luminous efficiency can be caused to reduce due to polarity effect.
As shown in figure 4, stopping being passed through into reaction chamber after the growth for completing N-type layer (or one layer of GaN quantum barrier layer)
TMGa, while reaction chamber temperature is reduced to 710 DEG C, after the temperature of reaction chamber is stablized to 710 DEG C, start to be continually fed into TMIn,
The growth of InGaN quantum well layer is carried out in a nitrogen atmosphere.
The growth of GaN quantum barrier layer may include:
Step 2: stopping being passed through TMIn into reaction chamber, and be passed through TMGa into reaction chamber, grow GaN quantum barrier layer.
Optionally, the growth temperature of GaN quantum barrier layer can be 700~900 DEG C.
Optionally, the growth pressure of GaN quantum barrier layer may be 300torr, can also be more than or less than 300torr.
Preferably, the growth thickness of GaN quantum barrier layer can be 8~15nm, and the thickness of quantum barrier layer is too thin or too thick,
The leakage of carrier will occur, luminous efficiency is caused to reduce.
As shown in figure 4, stopping being passed through TMIn into reaction chamber after the growth for completing one layer of InGaN quantum well layer, start
It is continually fed into TMGa, improves reaction chamber temperature to 850 DEG C, after the temperature of reaction chamber is stablized to 850 DEG C, in nitrogen and hydrogen mixture atmosphere
The lower growth for carrying out GaN quantum barrier layer.
Further, the growth of GaN quantum barrier layer may include the growth of GaN cap rock and the growth of GaN quantum base sublayer.
When realization, it can stop being passed through trimethyl indium into reaction chamber, trimethyl gallium, N2 are passed through into reaction chamber,
One layer of GaN cap rock is grown on InGaN quantum well layer；Continue to be passed through trimethyl gallium, N2 into reaction chamber, while being passed through H2, then
One layer of GaN quantum is grown on GaN cap rock builds sublayer.
Optionally, on GaN cap rock grow GaN quantum build sublayer when, be passed through the substance of the H2 and N2 of reaction chamber amount it
Than being 1: 20~20: 1.
When realization, the growth temperature of GaN cap rock builds the growth temperature of sublayer lower than the GaN quantum of growth on it.
Specifically, it can stop being passed through TMIn into reaction chamber, open after the growth for completing one layer of InGaN quantum well layer
Beginning is continually fed into TMGa, grows GaN cap rock in a hydrogen atmosphere, after the growth for completing GaN cap rock, improves reaction chamber temperature extremely
850 DEG C, after the temperature of reaction chamber is stablized to 850 DEG C, the growth that GaN quantum builds sublayer is carried out under nitrogen and hydrogen mixture atmosphere.
It should be noted that the growth course of GaN cap rock is not shown in Fig. 4,.
By repeating the growth course of quantum well layer and quantum barrier layer, to form active layer in N-type layer.
Optionally, the number for repeating step 1 and step 2 is 8~20 times, so as to form 8~20 layers of quantum well layer
And quantum barrier layer.
Optionally, when preceding n times grow GaN quantum barrier layer, preparation method further include:
Silane is passed through into reaction chamber, wherein n is less than total number of plies of GaN quantum barrier layer.Such as one share 10 layers of GaN quantum
Barrier layer, preceding 4 layers of GaN quantum barrier layer can adulterate, and latter 6 layers undope, and doping Si appropriate can effectively reduce in GaN quantum barrier layer
The operating voltage of LED.
S27: electronic barrier layer is grown on active layer.
It is compound outside active layer that electrons and holes can be reduced by growth electronic barrier layer, to further increase hair
The luminous efficiency of optical diode.
Optionally, the growth temperature of electronic barrier layer can be 900 DEG C.
Optionally, the growth thickness of electronic barrier layer can be 70nm, and growth rate can be 0.3 μm/h.
When realization, reaction chamber is heated to 900 DEG C, grows electronic barrier layer in a nitrogen atmosphere.
S28: the growing P-type layer on electronic barrier layer.
Optionally, the growth temperature of P-type layer can be 950 DEG C.
Optionally, the growth thickness of P-type layer can be 50nm.
When realization, reaction chamber is heated to 950 DEG C, adjusting growth pressure to 200torr is passed through TMGa into reaction chamber,
The growing P-type layer under nitrogen and hydrogen mixture atmosphere.
A kind of active layer made to the preparation method using the embodiment of the present invention includes 10 layers of InGaN quantum well layer and 10
The epitaxial wafer of layer GaN quantum barrier layer is cleaned, after plated film, the semiconductor technologies such as photoetching, and the LED chip of 4 × 5mil is divided into
It is tested, forward voltage can achieve 2.95V, and the output power of electric current 5mA, single LED chip are 5.5mW, and are showed
There is the epitaxial wafer of technology growth, the output power of the single LED chip obtained by identical chip processing procedure is only 4.5mW, defeated
Power improves 22.2% out.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
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| CN107946420B (en) * | 2017-09-27 | 2019-05-14 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
| CN109461796A (en) * | 2018-10-17 | 2019-03-12 | 中国科学院半导体研究所 | The manufacturing method and LED epitaxial wafer of InGaN/ (In) GaN quantum well structure |
| CN109888069B (en) * | 2019-01-10 | 2020-12-25 | 中国科学院半导体研究所 | InGaN/GaN quantum well structure and LED epitaxial wafer preparation method |
| CN112768578B (en) * | 2021-02-07 | 2024-11-15 | 厦门乾照光电股份有限公司 | A semiconductor epitaxial structure and its manufacturing method, and LED chip |
| CN115763645B (en) * | 2022-11-18 | 2025-05-06 | 京东方华灿光电(苏州)有限公司 | Light-emitting diode with improved luminous efficiency and preparation method thereof |
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| CN101556917A (en) * | 2008-04-09 | 2009-10-14 | 住友电气工业株式会社 | Method for forming quantum well structure and method for manufacturing semiconductor light emitting element |
| CN103022289A (en) * | 2012-12-18 | 2013-04-03 | 佛山市国星半导体技术有限公司 | Preparation method and light emitting diode (LED) structure of indium gallium nitride (InGaN) base multiple quantum well structure |
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| JP4917585B2 (en) * | 2008-08-26 | 2012-04-18 | 住友電気工業株式会社 | Method for manufacturing nitride-based semiconductor optical device and method for manufacturing epitaxial wafer |
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| CN101556917A (en) * | 2008-04-09 | 2009-10-14 | 住友电气工业株式会社 | Method for forming quantum well structure and method for manufacturing semiconductor light emitting element |
| CN103022289A (en) * | 2012-12-18 | 2013-04-03 | 佛山市国星半导体技术有限公司 | Preparation method and light emitting diode (LED) structure of indium gallium nitride (InGaN) base multiple quantum well structure |
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