CN106936397A - High flat degree broad band amplifier - Google Patents
High flat degree broad band amplifier Download PDFInfo
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- CN106936397A CN106936397A CN201710148420.8A CN201710148420A CN106936397A CN 106936397 A CN106936397 A CN 106936397A CN 201710148420 A CN201710148420 A CN 201710148420A CN 106936397 A CN106936397 A CN 106936397A
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The present invention provides a kind of high flat degree broad band amplifier, including distributed amplifier and feedback compensation circuit, one end of each feedback compensation branch road connects the control end of correspondence transistor in the distributed amplifier respectively in the feedback compensation circuit, the other end is grounded, the impedance of correspondence size is accessed the feedback compensation branch road control end of correspondence transistor, so that the parasitic parameter of the transistor is variable element, the cut-off frequency of the parasitic parameter influence artificial transmission line changes with the change of frequency input signal, so as to the flatness to the distributed amplifier is optimized.
Description
Technical field
The invention belongs to broad band amplifier field, and in particular to it is a kind of may be directly applied in microwave monolithic machine it is high flat
Degree broad band amplifier.
Background technology
Broad band amplifier can be amplified in broadband to radiofrequency signal, wide as the critical piece of transceiver
Performance quality with amplifier has decisive influence to the performance of microwave system.The application of broad band amplifier, can subtract significantly
Few system bulk and power consumption, meet the demand of modern communication and engineering field to multi-octave broadband amplifier unit, telecommunications,
Widely should be obtained in satellite communication, microwave measuring instrument, electronic surveillance system and space flight and aviation, electronic warfare system
With.
Realize that the circuit topology of broad band amplifier generally comprises distributed amplifier, dual input cascode amplifier, anti-
Feedback formula darlington amplifier, balance amplifier, adapter amplifier etc. is damaged, because distributed topology has working band
Wide, voltage standing wave(VSW) coefficient is small, flatness is good.The features such as being easy to single-chip integration, is increasingly widely used in broad band amplifier
In design.
Flatness directly determines broad band amplifier performance and application as the critical index of broad band amplifier, in order to
Preferable flatness is obtained in whole working band, can be right using broadband designing techniques such as appropriate step-down amplifier gains
Flatness carries out compromise treatment.But warp applicants have found that, with circuit work frequency, close to artificial transmission line, (i.e. broadband is put
Correspondence transmission line on transistor in big device) cut-off frequency, due to being influenceed by transistor parasitic parameter in broad band amplifier,
The flatness of broad band amplifier unavoidably occurs deterioration.Another method is using smaller technique line width, by technique
Progress bring more preferable high frequency characteristics, but technique line width diminishes and also brings along power margin decline, and circuit cost rises etc. no
Avoidable problem.
The content of the invention
The present invention provides a kind of high flat degree broad band amplifier, poor with the flatness for solving current broad band amplifier presence
Problem.
First aspect according to embodiments of the present invention, there is provided a kind of high flat degree broad band amplifier, including distributed air-defense
Device and feedback compensation circuit, one end of each feedback compensation branch road connects the distribution and puts respectively in the feedback compensation circuit
The impedance of correspondence size is accessed correspondence by the control end of correspondence transistor in big device, other end ground connection, the feedback compensation branch road
The control end of transistor, so that the parasitic parameter of the transistor is variable element, the parasitic parameter influences artificial transmission line
Cut-off frequency change with the change of frequency input signal, so as to be optimized to the flatness of the distributed amplifier.
In a kind of optional implementation, each feedback compensation branch road includes first resistor, the first inductance and first
Electric capacity, the first resistor is in parallel with first electric capacity after being connected with the first inductance, and one of sys node connection is described
The control end of correspondence transistor in distributed amplifier, another sys node ground connection.
In another optional implementation, the first resistor is the high level in interval 500 Ω~5000 Ω values
Resistance, first inductance is the low value inductance in interval 0.05nH~0.5nH values, and first electric capacity is in interval
The low value capacitance of 0.5pF~3pF values.
In another optional implementation, the distributed amplifier includes multiple amplification grade circuits, the first micro-strip
Line and the second microstrip line, each amplification grade circuit include input microstrip line, output microstrip line, the 3rd microstrip line, the 4th micro-strip
Line, the 5th microstrip line, the first transistor and transistor seconds, for each amplification grade circuit, the control end of its first transistor
Connection correspondence feedback compensation branch road simultaneously is used to receive radiofrequency signal, and first end connects its and exports micro-strip by the 3rd microstrip line
Second end of line, the second end of its first transistor connects the first end of transistor seconds by the 4th microstrip line, described
Second end of transistor seconds is grounded by the 5th microstrip line, and the control end of the transistor seconds connects its input micro-strip
Second end of line；
First amplification grade circuit is wherein directed to, the first end ground connection of its output microstrip line, the second end connects next amplifying stage
The first end of microstrip line is exported in circuit, being input into the first end of microstrip line is used to receive input signal, and the connection of the second end is next to put
The first end of microstrip line is input into big level circuit；For end amplification grade circuit, the first end connection upper of its output microstrip line
The second end of microstrip line is exported in amplification grade circuit, by the first microstrip line output signal, it is input into microstrip line at the second end
First end connect the second end of the second microstrip line in a upper amplification grade circuit, the second end is by second microstrip line ground connection.
In another optional implementation, for interstage amplifier section circuit, the first end connection of its output microstrip line
The second end of microstrip line is exported in a upper amplification grade circuit, the second end exports the first of microstrip line in connecting next amplification grade circuit
End, the first end of its input microstrip line connects the second end of input microstrip line in a upper amplification grade circuit, and the connection of the second end is next
The first end of microstrip line is input into amplification grade circuit.
In another optional implementation, the distributed amplifier also includes the first build-out resistor, for first
Amplification grade circuit, the first end of its output microstrip line is grounded by first build-out resistor.
In another optional implementation, the distributed amplifier also includes the second build-out resistor, for end
Amplification grade circuit, the second end of its input microstrip line is grounded by second microstrip line and the second build-out resistor.
In another optional implementation, one end of correspondence feedback compensation branch road and institute in the feedback compensation circuit
Steady resistance is provided between the control end for stating transistor in distributed amplifier.
In another optional implementation, the architectural characteristic of each feedback compensation branch road is identical, wherein each feedback
The first inductance, the first electric capacity are identical with the architectural characteristic of first resistor difference in compensation branch road.
In another optional implementation, the structure of the first transistor and transistor seconds in each amplification grade circuit
Characteristic is all identical, the architectural characteristic difference phase of the 3rd microstrip line, the 4th microstrip line and the 5th microstrip line in each amplification grade circuit
Together, interstage amplifier section circuit is identical with output microstrip line difference with input microstrip line in the amplification grade circuit of end.
The beneficial effects of the invention are as follows：
1st, the present invention is by the impedance to the control end access correspondence size of transistor in broad band amplifier so that put in broadband
The parasitic parameter of transistor is variable element in big device, the cut-off frequency of the artificial transmission line of parasitic parameter influence is believed with input
The change of number frequency and change, realize the optimization to distributed amplifier flatness；
2nd, the present invention is by the way that in each amplification grade circuit, the grid of gate transistor is respectively connected to corresponding feedback compensation altogether
Branch road, and feedback compensation branch road is included inductance, electric capacity and resistance, can make the parasitic gate parameter of common gate transistor is no longer
One fixed parameter, but the impedance load changed as frequency input signal changes, such that it is able to make artificial transmission line's
Cut-off frequency changes with the change of input signal, realizes the optimization to distributed amplifier flatness；
3rd, by the present invention in that first resistor is the high value resistor in interval 500 Ω~5000 Ω values, the first inductance is
In the low value inductance of interval 0.05nH~0.5nH values, the first electric capacity is the low value capacitance in interval 0.5pF~3pF values, can
Optimized with the flatness characteristic further facilitated to broad band amplifier；
4th, the present invention can be absorbed and be dissipated by setting the first build-out resistor to the electric current of reverse transfer；
5th, the present invention can be combined by setting the second build-out resistor with the second microstrip line, be broad band amplifier input
Impedance matching is provided；
6th, the present invention one end of correspondence feedback compensation branch road and transistor in the distributed amplifier control end it
Between be provided with steady resistance, it is possible thereby to improve the stability of integrated circuit；
7th, the present invention is designed by modular construction feature in each feedback compensation branch road and amplification grade circuit, can be with
Ensure that each amplification grade circuit input/output transmission line propagation phase is consistent, microwave signal is amplified single by different levels
First gradual magnification, and the in-phase stacking on output transmission line.
Brief description of the drawings
Fig. 1 is one embodiment circuit block diagram of high flat degree broad band amplifier of the present invention；
Fig. 2 is one embodiment circuit diagram of high flat degree broad band amplifier of the present invention；
Fig. 3 is the flatness contrast schematic diagram of the present invention and traditional high flat degree broad band amplifier.
Specific embodiment
In order that those skilled in the art more fully understand the technical scheme in the embodiment of the present invention, and make of the invention real
Applying the above-mentioned purpose of example, feature and advantage can be more obvious understandable, below in conjunction with the accompanying drawings to technical side in the embodiment of the present invention
Case is described in further detail.
In the description of the invention, unless otherwise prescribed with restriction, it is necessary to illustrate, term " connection " should do broad sense reason
Solution, can be joined directly together for example, it may be mechanically connecting or electrical connection, or two connections of element internal, also may be used
It is indirectly connected to by intermediary, for the ordinary skill in the art, can as the case may be understands above-mentioned
The concrete meaning of term.
It is a circuit diagram of high flat degree broad band amplifier of the present invention referring to Fig. 1.The high flat degree broad band amplifier can
With including distributed amplifier 110 and feedback compensation circuit 120, each feedback compensation branch road in the feedback compensation circuit 120
121 one end connects the control end of correspondence transistor in the distributed amplifier 110, other end ground connection, the feedback respectively
The impedance of correspondence size is accessed compensation branch road 121 control end of correspondence transistor, so that the parasitic parameter of the transistor is
Variable element, the cut-off frequency of the parasitic parameter influence artificial transmission line changes with the change of frequency input signal, so that
Flatness to the distributed amplifier is optimized.
In the present embodiment, through applicants have found that, as the frequency of broad band amplifier input signal is close to artificial transmission
The cut-off frequency of line, is influenceed by transistor parasitic parameter in broad band amplifier, and the flatness of broad band amplifier is inevitable
Ground occurs deterioration；In addition, through applicants have found that, transistor parasitic parameter can influence artificial transmission line in broad band amplifier
The change of cut-off frequency.Found based on the studies above, the present invention is right by the control end access to transistor in broad band amplifier
Answer the impedance of size so that the parasitic parameter of transistor is variable element in broad band amplifier, make the artificial of parasitic parameter influence
The cut-off frequency of transmission line changes with the change of frequency input signal, realizes the optimization to distributed amplifier flatness.
It is one embodiment circuit diagram of high flat degree broad band amplifier of the present invention referring to Fig. 2.Fig. 2 and Gao Ping shown in Fig. 1
The difference of smooth degree broad band amplifier is that each feedback compensation branch road 121 can include first resistor, the first inductance and first
Electric capacity, the first resistor is in parallel with first electric capacity after being connected with the first inductance, and one of sys node connection is described
The control end of correspondence transistor in distributed amplifier 110, another sys node ground connection.
Fig. 2 is also resided in the difference of high flat degree broad band amplifier shown in Fig. 1, and the distributed amplifier is put including multiple
Big level circuit, the first build-out resistor, the second build-out resistor, the first microstrip line and the second microstrip line, each amplification grade circuit are wrapped
Include input microstrip line, output microstrip line, the 3rd microstrip line, the 4th microstrip line, the 5th microstrip line, the first transistor and the second crystal
Pipe, for each amplification grade circuit, the control end connection correspondence feedback compensation branch road of its first transistor simultaneously is used to receive radio frequency
Signal, first end connects its second end for exporting microstrip line by the 3rd microstrip line, and the second end of its first transistor leads to
The first end that the 4th microstrip line connects transistor seconds is crossed, the second end of the transistor seconds is by the 5th micro-strip
Line is grounded, and the control end of the transistor seconds connects the second end of its input microstrip line；
First amplification grade circuit is wherein directed to, the first end of its output microstrip line is grounded by first build-out resistor,
Second end connects the first end of output microstrip line in next amplification grade circuit, and the first end for being input into microstrip line is believed for receiving input
Number, the second end connects the first end of input microstrip line in next amplification grade circuit；For end amplification grade circuit, its output micro-strip
The first end of line connects the second end of output microstrip line in a upper amplification grade circuit, and the second end is exported by first microstrip line
Signal, the first end of its input microstrip line connects the second end of the second microstrip line in a upper amplification grade circuit, and the second end passes through institute
State the second microstrip line and the second build-out resistor ground connection；
For interstage amplifier section circuit, the first end of its output microstrip line exports microstrip line in connecting a upper amplification grade circuit
The second end, the second end connects the first end that microstrip line is exported in next amplification grade circuit, and the first end of its input microstrip line connects
Connect the second end that microstrip line is input into an amplification grade circuit, the second end connects and the of microstrip line is input into next amplification grade circuit
One end.
In the present embodiment, transistor is HEMT (High Electron Mobility in amplifier in a distributed manner
Transistor, HEMT) as a example by pipe.The first amplification grade circuit of the distributed amplifier can include
HEMT pipes M1b, HEMT pipes M2b, input microstrip line Z2b, output microstrip line Z1b, the 3rd microstrip line Z4b, the 4th microstrip line Z5bWith the 5th
Microstrip line Z6b, wherein HEMT pipes M1bGrid connection correspondence feedback compensation branch road and be used to receive radiofrequency signal, drain electrode passes through the
Three microstrip line Z4bConnection output microstrip line Z1bThe second end, source electrode pass through the 4th microstrip line Z5bConnection HEMT pipes M2bDrain electrode,
HEMT pipes M2bSource electrode pass through the 5th microstrip line Z6bGround connection, grid connection input microstrip line Z2bThe second end, output microstrip line Z1b
First end pass through the first build-out resistor R1bGround connection, the second end exports microstrip line Z in connecting next amplification grade circuit3bFirst
End, input microstrip line Z2bFirst end be used to receive input signal Vin, the second end is input into micro-strip in connecting next amplification grade circuit
Line Z7bFirst end.
The interstage amplifier section circuit of the distributed amplifier can include HEMT pipes M3b, HEMT pipes M4b, input microstrip line
Z7b, output microstrip line Z3b, the 3rd microstrip line Z9b, the 4th microstrip line Z10bWith the 5th microstrip line Z11b, wherein HEMT pipes M3bGrid
Connection correspondence feedback compensation branch road simultaneously is used to receive radiofrequency signal, and drain electrode passes through the 3rd microstrip line Z9bConnection output microstrip line Z3b
The second end, source electrode pass through the 4th microstrip line Z10bConnection HEMT pipes M4bDrain electrode, HEMT pipes M4bSource electrode pass through the 5th micro-strip
Line Z11bGround connection, grid connection input microstrip line Z7bThe second end, output microstrip line Z3bFirst end to connect a upper amplifying stage electric
Microstrip line Z is exported in road1bThe second end, the second end exports microstrip line Z in connecting next amplification grade circuit8bFirst end, input
Microstrip line Z7bFirst end connect input microstrip line Z in a upper amplification grade circuit2bThe second end, the second end connects next amplification
Microstrip line Z is input into level circuit12bFirst end.
The end amplification grade circuit of the distributed amplifier can include HEMT pipes Mnb, HEMT pipes M(n+1)b, input microstrip line
(not shown), output microstrip line (not shown), the 3rd microstrip line Z[4+(n-1)*5]b, the 4th microstrip line Z[5+(n-1)*5]bWith
5th microstrip line Z[6+(n-1)*5]b.Wherein HEMT pipes MnbGrid connection correspondence feedback compensation branch road and be used for receive radiofrequency signal,
Drain electrode passes through the 3rd microstrip line Z[4+(n-1)*5]bThe second end of its output microstrip line is connected, source electrode passes through the 4th microstrip line
Z[5+(n-1)*5]bConnection HEMT pipes M(n+1)bDrain electrode, HEMT pipes M(n+1)bSource electrode pass through the 5th microstrip line Z[6+(n-1)*5]bGround connection,
Grid connects the second end of its input microstrip line, and the first end for exporting microstrip line connects the output microstrip line of a upper amplification grade circuit
The second end, the second end pass through the first microstrip line Z1Output signal, the first end for being input into microstrip line connects a upper amplification grade circuit
Input microstrip line the second end, the second end pass through the second microstrip line Z2, the second build-out resistor R2bGround connection.
In addition, feedback compensation branch road corresponding with the first amplification grade circuit of distributed amplifier can include the first inductance
L1b, the first electric capacity C1bWith first resistor R3b, wherein first resistor R3bWith the first inductance L1bWith the first electric capacity C after series connection1bParallel connection,
One of sys node connects HEMT pipes M in first amplification grade circuit1bGrid, another sys node ground connection.With distribution
The corresponding feedback compensation branch road of interstage amplifier section circuit of formula amplifier can include the first inductance L2b, the first electric capacity C2bWith
One resistance R6b, wherein first resistor R6bWith the first inductance L2bWith the first electric capacity C after series connection2bParallel connection, one of sys node connects
Meet HEMT pipes M in interstage amplifier section circuit3bGrid, another sys node ground connection.Amplify at end with distributed amplifier
The corresponding feedback compensation branch road of level circuit can include the first inductance Lnb, the first electric capacity CnbWith first resistor R(3*n)b, wherein the
One resistance R(3*n)bWith the first inductance LnbWith the first electric capacity C after series connectionnbParallel connection, one of sys node connects end amplifying stage
HEMT pipes M in circuitnbGrid, another sys node ground connection.The quantity of feedback compensation branch road is according in distributed amplifier
The number n of amplification grade circuit determines.
As seen from the above-described embodiment, transistor uses cascode structure in distributed amplifier, now can be by common source
Gate transmission line and drain transmission line in common gate structure are referred to as artificial transmission line.Generally in the AC signal topology of circuit,
The grid of gate transistor is directly grounded by shunt capacitance altogether.But warp applicants have found that, if by the grid of common gate transistor
Pole is only directly grounded by shunt capacitance, then the transistor parasitic parameter brought by operational characteristic is still immutable.This hair
The bright grid by common gate transistor in each amplification grade circuit is respectively connected to corresponding feedback compensation branch road, and mends feedback
Repaying branch road includes inductance, electric capacity and resistance, and the parasitic gate parameter that can make common gate transistor is no longer a fixed parameter, and
It is the impedance load changed as frequency input signal changes.Because common gate transistor parasitic parameter can influence artificial transmission line
The change of cut-off frequency, therefore the present invention, after feedback compensation circuit is introduced, the cut-off frequency of artificial transmission line also can be with defeated
Enter the change of signal and change.Because the size of inductance value, capacitance and resistance value determines that broadband is put in feedback compensation circuit
The feedback frequency characteristic and depth of feedback of big device, after the gain of compromise broad band amplifier and flatness index, by each anti-
In feedback compensation loop, inductance value, capacitance and resistance value in feedback compensation branch road are rationally set, can be in close original artificial transmission
During line cut-off frequency, continue to improve broad band amplifier flatness 5%~10%.
In addition, when the electric capacity in distributed amplifier altogether between gate transistor drain electrode and grid forms a negative feedback loop
When, therefore the band internal stability of integrated circuit will decline, and circuit easily produces self-excitation phenomena.Therefore, the present invention is anti-in correspondence
Steady resistance is provided between the control end of transistor in one end of feedback compensation branch road and the distributed amplifier, it is possible thereby to
Improve the stability of integrated circuit.Referring to Fig. 2, for the first amplification grade circuit of distributed amplifier, HEMT pipes M1bGrid
With in corresponding feedback compensation branch road between be provided with burning voltage R4b, for the interstage amplifier section circuit of distributed amplifier,
HEMT pipes M3bGrid with corresponding feedback compensation branch road between be provided with burning voltage R5b, for the end of distributed amplifier
Tail amplification grade circuit, HEMT pipes MnbGrid with corresponding feedback compensation branch road between be provided with burning voltage R(n+3)b。
In order to the flatness characteristic further facilitated to broad band amplifier is optimized, the first resistor is in interval
The high value resistor of 500 Ω~5000 Ω values, first inductance is the low value inductance in interval 0.05nH~0.5nH values,
First electric capacity is the low value capacitance in interval 0.5pF~3pF values.Additionally, feedback compensation branch road can be adopted in ground connection
With leading in MMIC (Monolithic Microwave Integrated Circuit, single-chip microcomputer microwave integrated circuit) circuit
Hole technology.
Operation principle of the invention is as follows：It by microstrip transmission line is one group of active device in parallel that distributed amplifier is
Input signal is provided, when radiofrequency signal is transmitted on gate line, every grade of transistor is all encouraged by voltage wave, signal is by tool
The mutual conductance for having gain features is transferred on drain line, because every section of time delay of two transmission lines is identical, and per transmission lines terminal
Be connected to matching load, then the signal for being transmitted to the right on output line just can with in-phase stacking, and reverse current ripple then by
Matched load is absorbed.Certain gain is provided per one-level amplifying stage and gain profiles are in a frequency band range very wide,
The total gain of amplifier is different from general tandem type amplifier overall gain equal to gain per stage product, but bridging amplifier at different levels
Gain sum, therefore distributed amplifier needs more series when high-gain is realized.Now grid and drain transmission line can
To regard a kind of special transmission line as, people are commonly referred to as artificial transmission line.Grid and drain transmission line are contained respectively
The grid capacitance of field-effect transistor, capacitance of drain and resistance, drain resistance.Due to the section parasitic of field-effect transistor
Oneself turns into the part of artificial transmission line by warp to parameter, and is no longer the limiting factor of amplifier gain bandwidth product, therefore this spy
Different transmission line not only has cut-off frequency higher, also eliminates the influence of parasitic capacitance.
After appropriate direct current biasing is provided, high flat degree broad band amplifier of the invention is in running order, now penetrates
Frequency signal passes through VINPort enters amplifier, using cascade amplifying unit level between micro-strip line length make input/output
Transmission line propagation phase is consistent, can thus make microwave signal by amplifying unit gradual magnifications at different levels, and on output transmission line
In-phase stacking, the radiofrequency signal after finally amplifying is from VOUTPort exports.Resistance R1bIt is output end build-out resistor, because leakage
The electric current of pole output is towards the transmission of positive and negative both direction on drain electrode artificial transmission line.Forward direction transmission electric current be overlapped mutually from
The output end output of distributed amplifier, and good voltage standing wave(VSW) coefficient is obtained, it is necessary to the first build-out resistor R1bTo reverse
The electric current of transmission is absorbed and is dissipated.Second build-out resistor R2bBe input build-out resistor, by with microstrip line Z2Knot
It is combined into input and impedance matching is provided.
According to the operation principle of distributed amplifier, in high flat degree broad band amplifier of the invention, each feedback is mended
The architectural characteristic for repaying branch road is identical, the structure of the first inductance, the first electric capacity and first resistor wherein in each feedback compensation branch road
Characteristic difference is identical.The architectural characteristic of the first transistor and transistor seconds is all identical in each amplification grade circuit, each amplification
Level circuit in the 3rd microstrip line, the 4th microstrip line and the 5th microstrip line architectural characteristic difference it is identical, interstage amplifier section circuit and
Microstrip line is input into the amplification grade circuit of end identical with output microstrip line difference, the architectural characteristic of each steady resistance is identical.Its
In as shown in Fig. 2 HEMT pipes M1b, HEMT pipes M2b, HEMT pipes M3b, HEMT pipes M4b, HEMT pipes Mnb, HEMT pipes M(n+1)bFor same
The transistor of size；Microstrip line Z3bWith microstrip line Z8bSize is consistent；Microstrip line Z7bWith microstrip line Z12bSize is consistent；Microstrip line
Z4b, microstrip line Z9bUntil microstrip line Z[4+(n-1)*5]bSize is consistent；Microstrip line Z5b, microstrip line Z10bUntil microstrip line Z[5+(n-1)*5]b
Size is consistent；Microstrip line Z6b, microstrip line Z11bUntil microstrip line Z[6+(n-1)*5]bSize is consistent；Resistance R4b, resistance R5bUntil resistance
R(n+3)bSize is consistent；Resistance R3b, resistance R6bUntil resistance R(3*n)bSize is consistent；Inductance L1b, resistance L2bUntil resistance LnbChi
It is very little consistent；Electric capacity C1b, electric capacity C2bUntil electric capacity CnbSize is consistent.
LgAnd LdThe inductance of identical element length in gate transmission line and drain transmission line is represented respectively；CgAnd CdRepresent respectively
The electric capacity of identical element length in gate transmission line and drain transmission line；lgRepresent Amplifier stage microstrip line on input microstrip line
Length；ldRepresent the length of Amplifier stage microstrip line on input microstrip line；CgsRepresent the input capacitance of cascade unit；Cds
Represent the output capacitance of cascade unit；The then characteristic impedance of gate transmission line and drain transmission line can be expressed as：
Make GmIt is every grade of mutual conductance of cascade amplifying unit, n is that the series of cascade amplifying unit in parallel (amplifies
The number of level circuit), then the gain of amplifier can be approximately equal to：
Make αgAnd αdRepresent the decay of gate transmission line and drain transmission line respectively, every section of attenuation constant of transmission line can be with
It is expressed as：
In formula：
wcgAnd wcdIt is respectively the cut-off frequency of grid and drain transmission line, w represents the angular speed of input signal, LgAnd LdPoint
It is not the inductance value of grid and drain transmission line.
From formula (3) and formula (4) as can be seen that αdValue do not change with the change of frequency substantially, only when frequency is close
During the cut-off frequency of drain transmission line, wcdWith and αdValue can just increase.So, in low-frequency range, the gain of distributed amplifier
Mainly receive αdInfluence；In high band, grid output transmission line loss αgTo the obvious effect of amplifier.Feedback compensation is returned
The introducing on road, makes wcgAnd wcdValue is changed into variable, so that αgAnd αdNot exclusively the function of frequency, is that the optimization of flatness increases
New variable optimized amount.
Resistance R4b, resistance R5bUntil resistance R(n+3)bRespectively with HEMT pipes M1b, HEMT pipes M2bUntil HEMT pipes MnbGrid
It is connected, resistance is generally 20~100 Ω, is mainly the resistance to overturning of raising circuit.
Electric capacity C1b, resistance C2bUntil CnbIt is feedback capacity, the parasitic gate parameter of common gate transistor is carried out in high band
Optimization, general value is in 0.5pF~3pF.
Inductance L1d, inductance L2dUntil LndIt is the inductance on backfeed loop, general to select low value inductance, general value exists
0.05nH~0.5nH, when inductance is too small, can choose microstrip line replacement.
Resistance R3b, resistance R6bUntil R(3*n)bIt is the resistance on backfeed loop, typically from high value resistor, general value exists
500~5000 Ω.
When broad band amplifier work constantly, radiofrequency signal is from VOUTPort output signal amplitude with from VINHold into output signal
The ratio of amplitude is the power gain of broad band amplifier；The gain flatness of broad band amplifier is mainly measurement amplifier in work
Make the gain fluctuation amplitude in bandwidth.
Fig. 3 is the present invention and the contrast of Conventional wide band amplifiers flatness, and the series of cascade amplifying unit is set as 6
Level, zero is the relation curve between the gain of Conventional wide band amplifiers and frequency；△ be circuit of the present invention gain and frequency it
Between relation curve.
HEMT pipes in circuit of the present invention, resistance, electric capacity, the basic parameter of inductance are：
HEMT is managed：︱ Vgs︱：0~12V, ︱ Vds︱：0~12V, ︱ Vbs︱：0~12V.
M1b、M2b、M3b、M4b…Mnb、M(n+1)bGrid it is long 0.25 μm；
M1b、M2b、M3b、M4b…Mnb、M(n+1)b35 μm of grid width；
M1b、M2b、M3b、M4b…Mnb、M(n+1)bGrid index：2；
Resistance R1b、R2b、R3b、R4b、R5b、R6b…R(n+3)b、R(3*n)bIt is metal thin film resistor；
R1bResistance be 73 Ω；R2bResistance be 51 Ω；
R4b、R5b…R(n+3)bResistance be 42 Ω；
R3b、R6b…R(3*n)bResistance be 950 Ω；
Inductance L1b、L2b…LnbInductance value be disposed as：0.8nH；Electric capacity C1b、C2b…CnbCapacitance be disposed as：
1.8pF；Microstrip line Z7bWith microstrip line Z12bSize is consistent；Microstrip line Z4b, microstrip line Z9bUntil microstrip line Z[4+(n-1)*5]bSize one
Cause；Microstrip line Z5b, microstrip line Z10bUntil microstrip line Z[5+(n-1)*5]bSize is consistent；Microstrip line Z6b, microstrip line Z11bUntil micro-strip
Line Z[6+(n-1)*5]bSize is consistent；Resistance R4b, resistance R5bUntil resistance R(n+3)bSize is consistent；Resistance R3b, resistance R6bUntil resistance
R(3*n)bSize is consistent.
Microstrip line Z3b、Z8b... width be 18 μm；
Microstrip line Z3b、Z8b... length be 850 μm；
Microstrip line Z7b、Z12b... width be 10 μm；
Microstrip line Z7b、Z12b... length be 560 μm；
Microstrip line Z4b、Z9b…Z[4+(n-1)*5]bWidth be 8 μm；
Microstrip line Z4b、Z9b…Z[4+(n-1)*5]bLength be 25 μm；
Microstrip line Z5b、Z10b…Z[5+(n-1)*5]bWidth be 5 μm；
Microstrip line Z5b、Z10b…Z[5+(n-1)*5]bLength be 315 μm；
Microstrip line Z6b、Z11b…Z[6+(n-1)*5]bWidth be 17 μm；
Microstrip line Z6b、Z11b…Z[6+(n-1)*5]bLength be 14 μm；
Microstrip line Z1bWidth be 18 μm, length be 300 μm；
Microstrip line Z1bWidth be 10 μm, length be 150 μm；
Microstrip line Z1Width be 18 μm, length be 170 μm；
Microstrip line Z2Width be 10 μm, length be 220 μm.
Because the feedback compensation unit in circuit of the present invention is when broad band amplifier is worked in compared with low-frequency range, by rationally choosing
The device value in backfeed loop is taken, frequency characteristic of the broad band amplifier in lower frequency can be had substantially no effect on.Additionally, due to point
The input/output impedance operator of cloth amplifier is mainly what is determined by constructed artificial transmission line, and this can by
Taken in during earlier circuit design optimization, and for transistor power gain substantially without influence, therefore to broad band amplifier
The influence of the electrical characteristics such as gain is smaller, it is to avoid voltage gain, output 1dB compression points, input voltage standing-wave ratio, output voltage are stayed
The problems such as wave system number severe exacerbation.
Those skilled in the art considering specification and after putting into practice invention disclosed herein, will readily occur to it is of the invention its
Its embodiment.The application is intended to any modification of the invention, purposes or adaptations, these modifications, purposes or
Person's adaptations follow general principle of the invention and including undocumented common knowledge in the art of the invention
Or conventional techniques.Description and embodiments are considered only as exemplary, and true scope and spirit of the invention are by following
Claim is pointed out.
It should be appreciated that the invention is not limited in the precision architecture being described above and be shown in the drawings, and
And can without departing from the scope carry out various modifications and changes.The scope of the present invention is only limited by appended claim.
Claims (10)
1. a kind of high flat degree broad band amplifier, it is characterised in that including distributed amplifier and feedback compensation circuit, it is described anti-
One end of each feedback compensation branch road connects the control of correspondence transistor in the distributed amplifier respectively in feedback compensation circuit
The impedance of correspondence size is accessed end, other end ground connection, the feedback compensation branch road control end of correspondence transistor, so that described
The parasitic parameter of transistor is variable element, and the cut-off frequency of the parasitic parameter influence artificial transmission line is with frequency input signal
Change and change, so as to be optimized to the flatness of the distributed amplifier.
2. high flat degree broad band amplifier according to claim 1, it is characterised in that each feedback compensation branch road includes
First resistor, the first inductance and the first electric capacity, the first resistor are in parallel with first electric capacity after being connected with the first inductance, its
In sys node connect the control end of correspondence transistor in the distributed amplifier, another sys node ground connection.
3. high flat degree broad band amplifier according to claim 2, it is characterised in that the first resistor is in interval
The high value resistor of 500 Ω~5000 Ω values, first inductance is the low value inductance in interval 0.05nH~0.5nH values,
First electric capacity is the low value capacitance in interval 0.5pF~3pF values.
4. high flat degree broad band amplifier according to claim 1, it is characterised in that the distributed amplifier includes many
Individual amplification grade circuit, the first microstrip line and the second microstrip line, each amplification grade circuit include input microstrip line, output micro-strip
Line, the 3rd microstrip line, the 4th microstrip line, the 5th microstrip line, the first transistor and transistor seconds, for each amplifying stage electricity
Road, the control end connection correspondence feedback compensation branch road of its first transistor simultaneously is used to receive radiofrequency signal, and first end is by described
3rd microstrip line connects the second end of its output microstrip line, and the second end of its first transistor is connected by the 4th microstrip line
The first end of transistor seconds, the second end of the transistor seconds is grounded by the 5th microstrip line, second crystal
The control end of pipe connects the second end of its input microstrip line；
First amplification grade circuit is wherein directed to, the first end ground connection of its output microstrip line, the second end connects next amplification grade circuit
The first end of middle output microstrip line, being input into the first end of microstrip line is used to receive input signal, and the second end connects next amplifying stage
The first end of microstrip line is input into circuit；For end amplification grade circuit, the first end connection upper of its output microstrip line is amplified
The second end of microstrip line is exported in level circuit, by the first microstrip line output signal, it is input into the of microstrip line at the second end
One end connects the second end of the second microstrip line in a upper amplification grade circuit, and the second end is grounded by second microstrip line.
5. high flat degree broad band amplifier according to claim 4, it is characterised in that for interstage amplifier section circuit, its
The first end for exporting microstrip line connects the second end of output microstrip line in a upper amplification grade circuit, and the second end connects next amplifying stage
The first end of microstrip line is exported in circuit, the first end of its input microstrip line is input into microstrip line in connecting a upper amplification grade circuit
Second end, the second end connects the first end of input microstrip line in next amplification grade circuit.
6. high flat degree broad band amplifier according to claim 4, it is characterised in that the distributed amplifier also includes
First build-out resistor, for first amplification grade circuit, the first end of its output microstrip line is grounded by first build-out resistor.
7. the high flat degree broad band amplifier according to claim 4 or 6, it is characterised in that the distributed amplifier is also
Including the second build-out resistor, for end amplification grade circuit, the second end of its input microstrip line by second microstrip line and
Second build-out resistor is grounded.
8. high flat degree broad band amplifier according to claim 1, it is characterised in that correspondence in the feedback compensation circuit
In one end of feedback compensation branch road and the distributed amplifier steady resistance is provided between the control end of transistor.
9. high flat degree broad band amplifier according to claim 2, it is characterised in that the structure of each feedback compensation branch road
Characteristic is identical, and wherein the first inductance, the first electric capacity are identical with the architectural characteristic of first resistor difference in each feedback compensation branch road.
10. high flat degree width amplifier according to claim 5, it is characterised in that first in each amplification grade circuit
The architectural characteristic of transistor and transistor seconds is all identical, the 3rd microstrip line, the 4th microstrip line and in each amplification grade circuit
The architectural characteristic difference of five microstrip lines is identical, microstrip line is input into interstage amplifier section circuit and end amplification grade circuit and output is micro-
Band line distinguishes identical.
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| CN107528555A (en) * | 2017-08-09 | 2017-12-29 | 四川九洲电器集团有限责任公司 | A kind of distributed amplifier |
| CN107896094A (en) * | 2017-12-07 | 2018-04-10 | 中国电子科技集团公司第四十研究所 | A kind of distributed amplifier circuit and its implementation |
| CN109150122A (en) * | 2018-08-01 | 2019-01-04 | 南京邮电大学 | A kind of restructural distributed amplifier circuit |
| CN109450392A (en) * | 2018-12-27 | 2019-03-08 | 苏州英诺迅科技股份有限公司 | A kind of distribution emitter following amplifier |
| CN112865725A (en) * | 2021-01-13 | 2021-05-28 | 中电国基南方集团有限公司 | Ultra-wideband high-power high-efficiency monolithic integrated power amplifier circuit structure |
| CN112953411A (en) * | 2021-03-10 | 2021-06-11 | 西安博瑞集信电子科技有限公司 | Ultra-wideband power amplifier |
| CN114024511A (en) * | 2021-10-11 | 2022-02-08 | 电子科技大学 | A Digitally Controlled Broadband High Linearity Variable Gain Amplifier |
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| CN116094469A (en) * | 2023-04-11 | 2023-05-09 | 南京米乐为微电子科技有限公司 | Common gate amplifying circuit, low noise amplifier and ultra-wideband receiver |
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