CN106646316A - Method for testing noise of switching-type Hall sensor - Google Patents
Method for testing noise of switching-type Hall sensor Download PDFInfo
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- CN106646316A CN106646316A CN201710059401.8A CN201710059401A CN106646316A CN 106646316 A CN106646316 A CN 106646316A CN 201710059401 A CN201710059401 A CN 201710059401A CN 106646316 A CN106646316 A CN 106646316A
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
The invention discloses a method for testing the noise of a switching-type Hall sensor. The method indirectly tests the noise performance of the sensor by observing the power-up process of the sensor and comprises steps of: placing the switching-type Hall sensor in a magnetic field generator; powering the sensor with a square signal output by a signal generator, wherein the amplitude of the square signal is from 0 to VDD, the VDD is the operating voltage of the sensor chip, the cycle of the square signal is 2*(Tpu + N*Ts), Tpu is the power-up time of the sensor chip, Ts is the sampling cycle of the sensor chip, N is an integer between 5 and 10, the duty cycle of the square signal is 50%; detecting the output of the sensor with a oscilloscope, wherein the oscilloscope is configured to be triggered by rising edges, a trigger source is a square wave generated by a signal generator, and persistence time is set as infinity. The method obtains a high-frequency power supply voltage source by using the signal generator on the premise of the known power-up initial state of the chip, and obtains the upper and lower limits of the BOP/BRP by observing the statistical characteristic of the power-up process of the sensor so as to obtain the noise characteristics of the switching-type Hall sensor.
Description
Technical field
The invention belongs to sensor testing techniques field, is related to a kind of sensor noise method of testing, more particularly to it is a kind of
The method of testing of Hall switch sensor noise.
Background technology
Hall element is a kind of magnetic field sensor made according to Hall effect, widely should be had in the automotive industry
With, including power, Body Control, polling power controlling and anti-lock braking system etc..In order to meet the needs of different system, suddenly
You are divided into two kinds of line style Hall element and Hall switch sensor by sensor.One as Hall element of noiseproof feature
Important indicator, plays most important to Hall element, the especially design of high sampling rate high accuracy Hall switch sensor
Effect.Concrete manifestation of the noise in Hall switch sensor is exactly that the turn threshold for causing sensor occurs random change
Change.
It is the input-output characteristic of a preferable bipolar switch Hall element shown in Fig. 1：Abscissa Bin is input
Magnetic field intensity, ordinate HALL_OUT is output level (" 0 " represents low level, and " 1 " represents high level).It can be seen that working as Bin>
During BOP, the output of sensor is by high step-down；Work as Bin<BRP is that the output of sensor is uprised by low；BHYS=BOP-BRP is defined
For the retarding window of Hall switch sensor.After having noise superposition to come in, the input and output of Hall switch sensor
Characteristic changes, as shown in Figure 2：The turn threshold (BOP/BRP) of sensor understands random fluctuation, and the size of random fluctuation is received
The impact of the length of noise size and observation time.
It is as shown in Figure 3 in the traditional test methods of laboratory environment breaker in middle type Hall element：Sensor is positioned over
In one-dimensional magnetic field environment, and it is powered with source of stable pressure, with the output of universal meter detection sensor；If being output as " 0 ", no
Until its upset is " 1 ", now corresponding magnetic field intensity is BRP to record to the disconnected magnetic field intensity that reduces；If being output as " 1 ", no
Disconnected increasing magnetic field is " 0 " until its upset, and now corresponding magnetic field intensity is BOP to record.This method of testing, due to magnetic
The pace of change of field intensity is too slow, can only often measure the lower limit (BOPB and BRPB in Fig. 2) of BOP and BRP.And switching mode is suddenly
That working sensor is in two kinds of different states：After BOP (or BRP) has been tested, Hall element can be switched to other one
Individual state, thus the upper limit (BOPT and BRPT in Fig. 2) for wanting test b OP and BRP is accomplished by producing the alternation of a high frequency
Magnetic field.
However, regrettably, at present most magnetic field generator cannot all produce the alternating magnetic field of high frequency, thus survey
The noiseproof feature of examination Hall switch sensor BOP/BRP also becomes abnormal difficult.
The content of the invention
The technical problem to be solved is：A kind of method of testing of Hall switch sensor noise is provided, can
The noiseproof feature of accurate test Hall switch sensor BOP/BRP.
To solve above-mentioned technical problem, the present invention is adopted the following technical scheme that：
A kind of method of testing of Hall switch sensor noise, the method for testing is the upper electric mistake by observing sensor
Journey, measures the noiseproof feature of sensor indirectly：Hall switch sensor is positioned in magnetic field generator；Use signal generator
To sensor power, the amplitude of square-wave signal is 0 to VDD to the square-wave signal of output, and VDD is the operating voltage of sensor chip,
Cycle is 2* (Tpu+N*Ts), and Tpu is the power-on time of sensor chip, and Ts is the sampling period of sensor chip, and N takes 5 and arrives
Integer between 10, dutycycle is 50%；With the output of oscillograph detection sensor, oscillograph is set to rising edge triggering, tactile
Rise the square wave produced for signal generator, and sunset glow set of time is infinity；
If the upper electric initial state of sensor chip is " 1 ", start to incrementally increase magnetic field intensity from Bin=0, often arrange one
Secondary magnetic field intensity Bin, is required for removing an oscillograph sunset glow manually；
When 0<=Bin<BOPB, the first output waveform VOUT_1 of sensor is approximately equal to the output wave of signal generator
Shape, when signal generator exports high level, the output of sensor is also always high level, is not in upset situation；
Work as Bin>BOPB, when signal generator exports high level, output waveform VOUT_2 of sensor can be with relatively low
There is the situation of upset in probability；
Work as BOPB<Bin<BOPT, with being continuously increased for Bin, when signal generator exports high level, sensor output
The probability of upset also more and more higher, while the time point of upset is also increasingly to reach；
Work as Bin>BOPT, when signal generator exports high level, first that sensor will be after the power-up sampled point
Overturn；
According to observed result above, VOUT_1 magnetic field intensities corresponding with the critical value of VOUT_2 are exactly BOPB, VOUT_
4 magnetic field intensities corresponding with the critical value of VOUT_5 are exactly BOPT；In the same manner, if the upper electric initial state of sensor chip is " 0 ",
Start progressively to reduce magnetic field intensity from Bin=0, just determine the lower limit BRPB and upper limit BRPT of BRP；
Wherein, VOUT_1 is 0<=Bin<The output waveform of sensor during BOPB；VOUT_2 be Bin less times greater than BOPB when
The output waveform of sensor；VOUT_3 represents that Bin is continuously increased the probability of caused sensor output waveform upset and becomes big,
VOUT_4 represents that Bin further increases the time point of caused sensor output waveform upset to reach；VOUT_5 is Bin>
The output waveform of sensor during BOPT.
A kind of method of testing of Hall switch sensor noise, by the power up for observing sensor, measures indirectly
The noiseproof feature of sensor；
Hall switch sensor is positioned in magnetic field generator；With the square-wave signal of signal generator output to sensing
Device is powered, and the amplitude of square-wave signal is 0 to VDD, and VDD is the operating voltage of sensor chip, and the cycle is 2* (Tpu+N*Ts),
Tpu is the power-on time of sensor chip, and Ts is the sampling period of sensor chip, and N takes the integer between 5 to 10, dutycycle
For 50%；
With the output of oscillograph detection sensor, oscillograph is set to rising edge triggering, and trigger source is that signal generator is produced
Raw square wave, sunset glow set of time is infinity.
As a preferred embodiment of the present invention, if the upper electric initial state of sensor chip is " 1 ", from the beginning of Bin=0
Incrementally increase magnetic field intensity；If the upper electric initial state of sensor chip is " 0 ", start progressively to reduce magnetic field from Bin=0 strong
Degree；Primary field intensity Bin is often set, is required for removing an oscillograph sunset glow manually.
As a preferred embodiment of the present invention, when 0<=Bin<BOPB, the first output waveform VOUT_1 of sensor is near
The approximately equal to output waveform of signal generator, when signal generator exports high level, the output of sensor is also always high electricity
It is flat, be not in upset situation；
Work as Bin>BOPB, when signal generator exports high level, output waveform VOUT_2 of sensor can be with relatively low
There is the situation of upset in probability；
Work as BOPB<Bin<BOPT, with being continuously increased for Bin, when signal generator exports high level, sensor output
The probability of upset also more and more higher, while the time point of upset is also increasingly to reach；
Work as Bin>BOPT, when signal generator exports high level, first that sensor will be after the power-up sampled point
Overturn.
Used as a preferred embodiment of the present invention, according to above-mentioned observed result, VOUT_1 is corresponding with the critical value of VOUT_2
Magnetic field intensity be exactly the corresponding magnetic field intensity of critical value of BOPB, VOUT_4 and VOUT_5 be exactly BOPT；In the same manner, if sensing
The upper electric initial state of device chip is " 0 ", then start progressively to reduce magnetic field intensity from Bin=0, just determines the lower limit BRPB of BRP and upper
Limit BRPT；
Wherein, VOUT_1 is 0<=Bin<The output waveform of sensor during BOPB；VOUT_2 be Bin less times greater than BOPB when
The output waveform of sensor；VOUT_3 represents that Bin is continuously increased the probability of caused sensor output waveform upset and becomes big,
VOUT_4 represents that Bin further increases the time point of caused sensor output waveform upset to reach；VOUT_5 is Bin>
The output waveform of sensor during BOPT.
The beneficial effects of the present invention is：The method of testing of Hall switch sensor noise proposed by the present invention,
Know on chip on the premise of electric initial state, using signal generator generation high frequency supply voltage source, by observing electric mistake on sensor
The statistical property of journey obtains the upper and lower bound of BOP/BRP, so as to draw the noise characteristic of Hall switch sensor.This does
The benefit of method is the low frequency feature for replacing magnetic field generator using the high frequency characteristics of signal generator, completes Hall switch biography
The noise testing of sensor, is increased without extra equipment and expense.
Description of the drawings
Fig. 1 is the input-output characteristic of preferable bipolar switch Hall element.
Fig. 2 is the input-output characteristic of bipolar switch Hall element affected by noise.
Fig. 3 is the conventionally test schematic diagram of Hall switch sensor.
Fig. 4 is the novel test schematic diagram of Hall switch sensor noiseproof feature.
Fig. 5 is output voltage in Hall switch sensor power up with the variation relation of Bin.
Specific embodiment
Describe the preferred embodiments of the present invention in detail below in conjunction with the accompanying drawings.
Embodiment one
Present invention is disclosed a kind of method of testing of Hall switch sensor noise, the method for testing is by observing biography
The power up of sensor, measures the noiseproof feature of sensor indirectly, and test philosophy figure is shown in figure (4)：By Hall switch sensor
In being positioned over magnetic field generator；With the square-wave signal of signal generator output to sensor power, the amplitude of square-wave signal is arrived for 0
VDD, VDD are the operating voltages of sensor chip, and the cycle is 2* (Tpu+N*Ts), Tpu for sensor chip power-on time, Ts
For the sampling period of sensor chip, N takes the integer between 5 to 10, and dutycycle is 50%；It is defeated with oscillograph detection sensor
Go out, oscillograph is set to rising edge triggering, trigger source is the square wave that signal generator is produced, and sunset glow set of time is infinity.
If the upper electric initial state of sensor chip is " 1 ", start to incrementally increase magnetic field intensity from Bin=0；If sensing
The upper electric initial state of device chip is " 0 ", then start progressively to reduce magnetic field intensity from Bin=0；Primary field intensity Bin is often set, all
Need to remove an oscillograph sunset glow manually.
When 0<=Bin<BOPB, the first output waveform VOUT_1 of sensor is approximately equal to the output wave of signal generator
Shape, when signal generator exports high level, the output of sensor is also always high level, is not in upset situation.Such as Fig. 5
In VDD for signal generator output waveform, the VOUT_1 in Fig. 5 be 0<=Bin<The output waveform of sensor during BOPB.
Work as Bin>BOPB, when signal generator exports high level, the output of sensor can occur turning over relatively low probability
Situation about turning.If the VOUT_2 in Fig. 5 is output waveforms of the Bin less times greater than sensor during BOPB.
Work as BOPB<Bin<BOPT, with being continuously increased for Bin, when signal generator exports high level, sensor output
The probability of upset also more and more higher, while the time point of upset is also increasingly to reach.As figure (5) in VOUT_3 be Bin not
The disconnected probability for increasing caused sensor output switching activity becomes big situation, and it is that further increase causes Bin to scheme the VOUT_4 in (5)
Sensor output switching activity time point to reach situation.
Work as Bin>BOPT, when signal generator exports high level, first that sensor will be after the power-up sampled point
Overturn.If the VOUT_5 in Fig. 5 is Bin>The output waveform of sensor during BOPT.
According to observed result above, VOUT_1 magnetic field intensities corresponding with the critical value of VOUT_2 are exactly BOPB, VOUT_
4 magnetic field intensities corresponding with the critical value of VOUT_5 are exactly BOPT；In the same manner, if the upper electric initial state of sensor chip is " 0 ",
Start progressively to reduce magnetic field intensity from Bin=0, just can determine the lower limit BRPB and upper limit BRPT of BRP.
In sum, the method for testing of Hall switch sensor noise proposed by the present invention, electricity is first in known chip
On the premise of state, high frequency supply voltage source is produced using signal generator, by the statistical property for observing sensor power up
The upper and lower bound of BOP/BRP is obtained, so as to draw the noise characteristic of Hall switch sensor.The benefit of this way is profit
With the high frequency characteristics of signal generator, replace the low frequency feature of magnetic field generator, the noise for completing Hall switch sensor is surveyed
Examination, is increased without extra equipment and expense.
Here description of the invention and application are illustrative, are not wishing to limit the scope of the invention to above-described embodiment
In.The deformation and change of embodiments disclosed herein is possible, real for those skilled in the art
The replacement and equivalent various parts for applying example is known.It should be appreciated by the person skilled in the art that without departing from the present invention
Spirit or essential characteristics in the case of, the present invention can in other forms, structure, arrangement, ratio, and with other components,
Material and part are realizing.In the case of without departing from scope and spirit of the present invention, embodiments disclosed herein can be entered
Other deformations of row and change.
Claims (5)
1. a kind of method of testing of Hall switch sensor noise, it is characterised in that the method for testing is by observing sensing
The power up of device, measures the noiseproof feature of sensor indirectly：Hall switch sensor is positioned in magnetic field generator；With
To sensor power, the amplitude of square-wave signal is 0 to VDD to the square-wave signal of signal generator output, and VDD is sensor chip
Operating voltage, the cycle is 2* (Tpu+N*Ts), and Tpu is the power-on time of sensor chip, and Ts is all for the sampling of sensor chip
Phase, N takes the integer between 5 to 10, and dutycycle is 50%；With the output of oscillograph detection sensor, oscillograph is set to rise
Along triggering, trigger source is the square wave that signal generator is produced, and sunset glow set of time is infinity；
If the upper electric initial state of sensor chip is " 1 ", start to incrementally increase magnetic field intensity from Bin=0, a magnetic is often set
Field intensity Bin, is required for removing an oscillograph sunset glow manually；
When 0<=Bin<BOPB, the first output waveform VOUT_1 of sensor is approximately equal to the output waveform of signal generator,
During signal generator output high level, the output of sensor is also always high level, is not in upset situation；
Work as Bin>BOPB, when signal generator exports high level, output waveform VOUT_2 of sensor can be with relatively low probability
There is the situation of upset；
Work as BOPB<Bin<BOPT, with being continuously increased for Bin, when signal generator exports high level, sensor output switching activity
Probability also more and more higher, while the time point of upset is also increasingly to reach；
Work as Bin>BOPT, when signal generator exports high level, first that sensor will be after the power-up sampled point occurs
Upset；
According to observed result above, VOUT_1 magnetic field intensities corresponding with the critical value of VOUT_2 are exactly BOPB, VOUT_4 with
The corresponding magnetic field intensity of critical value of VOUT_5 is exactly BOPT；In the same manner, if the upper electric initial state of sensor chip is " 0 ", from
Bin=0 starts progressively to reduce magnetic field intensity, just determines the lower limit BRPB and upper limit BRPT of BRP；
Wherein, VOUT_1 is 0<=Bin<The output waveform of sensor during BOPB；VOUT_2 is that Bin is sensed less times greater than during BOPB
The output waveform of device；VOUT_3 represents that Bin is continuously increased the probability of caused sensor output waveform upset and becomes big, VOUT_4 tables
Show that Bin further increases the time point of caused sensor output waveform upset to reach；VOUT_5 is Bin>Sense during BOPT
The output waveform of device.
2. a kind of method of testing of Hall switch sensor noise, it is characterised in that by the power up for observing sensor,
The noiseproof feature of sensor is measured indirectly；
Hall switch sensor is positioned in magnetic field generator；The square-wave signal exported with signal generator is supplied sensor
Electricity, the amplitude of square-wave signal is 0 to VDD, and VDD is the operating voltage of sensor chip, and the cycle is 2* (Tpu+N*Ts), and Tpu is
The power-on time of sensor chip, Ts is the sampling period of sensor chip, and N takes the integer between 5 to 10, and dutycycle is
50%；
With the output of oscillograph detection sensor, oscillograph is set to rising edge triggering, and trigger source is what signal generator was produced
Square wave, sunset glow set of time is infinity.
3. the method for testing of Hall switch sensor noise according to claim 2, it is characterised in that：
If the upper electric initial state of sensor chip is " 1 ", start to incrementally increase magnetic field intensity from Bin=0；If sensor core
The upper electric initial state of piece is " 0 ", then start progressively to reduce magnetic field intensity from Bin=0；Primary field intensity Bin is often set, is required for
An oscillograph sunset glow is removed manually.
4. the method for testing of Hall switch sensor noise according to claim 2, it is characterised in that：
When 0<=Bin<BOPB, the first output waveform VOUT_1 of sensor is approximately equal to the output waveform of signal generator,
During signal generator output high level, the output of sensor is also always high level, is not in upset situation；
Work as Bin>BOPB, when signal generator exports high level, output waveform VOUT_2 of sensor can be with relatively low probability
There is the situation of upset；
Work as BOPB<Bin<BOPT, with being continuously increased for Bin, when signal generator exports high level, sensor output switching activity
Probability also more and more higher, while the time point of upset is also increasingly to reach；
Work as Bin>BOPT, when signal generator exports high level, first that sensor will be after the power-up sampled point occurs
Upset.
5. the method for testing of Hall switch sensor noise according to claim 4, it is characterised in that：
According to above-mentioned observed result, VOUT_1 magnetic field intensities corresponding with the critical value of VOUT_2 are exactly BOPB, VOUT_4 with
The corresponding magnetic field intensity of critical value of VOUT_5 is exactly BOPT；In the same manner, if the upper electric initial state of sensor chip is " 0 ", from
Bin=0 starts progressively to reduce magnetic field intensity, just determines the lower limit BRPB and upper limit BRPT of BRP；
Wherein, VOUT_1 is 0<=Bin<The output waveform of sensor during BOPB；VOUT_2 is that Bin is sensed less times greater than during BOPB
The output waveform of device；VOUT_3 represents that Bin is continuously increased the probability of caused sensor output waveform upset and becomes big, VOUT_4 tables
Show that Bin further increases the time point of caused sensor output waveform upset to reach；VOUT_5 is Bin>Sense during BOPT
The output waveform of device.
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