CN106159675A - A kind of semiconductor laser external cavity feedback spectrum beam combination device and spectrum beam combination method thereof - Google Patents
A kind of semiconductor laser external cavity feedback spectrum beam combination device and spectrum beam combination method thereof Download PDFInfo
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- CN106159675A CN106159675A CN201610827968.0A CN201610827968A CN106159675A CN 106159675 A CN106159675 A CN 106159675A CN 201610827968 A CN201610827968 A CN 201610827968A CN 106159675 A CN106159675 A CN 106159675A
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- light
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- 238000001228 spectrum Methods 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000003491 array Methods 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a kind of semiconductor laser external cavity feedback spectrum beam combination device and spectrum beam combination method thereof.Described device realizes spectrum beam combination for the multiple laser being parallel to each other sending laser array, including convertible lens, diffraction grating, collimating mirror, total reflective mirror the first, total reflective mirror two.The multiple laser being parallel to each other that laser array sends focuses on the diffraction grating through convertible lens, and 1 order diffraction light and 0 order diffraction light are distributed entire light power by diffraction grating by a certain percentage.After 0 order diffraction light collimated mirror collimation, total reflective mirror one is all fed back on diffraction grating diffraction again, its diffraction direction add total reflective mirror two and total reflective mirror one form vibration modeling structure, light a part of return laser light array of output forms mould-locking structure, and a part of light exports from output light path.Present invention can be implemented in the spectrum beam combination that can obtain greater efficiency in the case of using relatively low diffraction efficiency grating.
Description
Technical field
The present invention relates to a kind of spectrum beam combination device and the spectrum beam combination method thereof in semiconductor laser technique field, especially relate to
And a kind of semiconductor laser external cavity feedback spectrum beam combination device and spectrum beam combination method thereof.
Background technology
Due to advantages such as semiconductor laser have high light beam quality, and heat dissipation characteristics is good, life-span length, therefore laser doctor
The aspects such as treatment, optical fiber laser pump, laser monitor, Laser Processing suffer from being widely applied.But recently as partly leading
The development of body laser technology application, requires higher field for such as metal solder, laser cutting etc., semiconductor laser
Application still acquires a certain degree of difficulty, and improves the beam quality of semiconductor laser, improves the brightness of outgoing laser beam, for high-power half
The development of conductor laser and apply significant.
Realizing spectrum beam combination by external cavity feedback, can effectively improving the brightness of semiconductor laser, it is not increasing by half
The beam quality that will close Shu Fangxiang while the beam quality of light beam on conductor laser non-conjunction Shu Fangxiang reduces to single luminescence
The beam quality of unit.The method in United States Patent (USP) US7065107B2, US6192062B1, US6208679, US874222B2 and
Notification number be CN102986097A, entitled " selectivity is reorientated and rotates wavelength beam combination system and method " domestic
Patent is all on the books, but these spectrum beam combination methods to laser array close bundle when to obtain higher efficiency when, dispersion element
Grating needs higher diffraction efficiency.And the grating involving great expense is when diffraction efficiency is higher than 90%, promoting diffraction efficiency will be big
The addition that increases originally, and is difficult to large-scale production so that semiconductor laser high efficiency spectrum beam combination cost raises.
Content of the invention
In order to solve the technical problem in background technology, the invention provides a kind of semiconductor laser external cavity feedback spectrum and close
Bundle device and spectrum beam combination method thereof.
The solution of the present invention is: a kind of semiconductor laser external cavity feedback spectrum beam combination device, it is for laser battle array
The multiple laser being parallel to each other that row send realizes spectrum beam combination；Described device include convertible lens, diffraction grating, collimating mirror,
Total reflective mirror the first, total reflective mirror two；The multiple laser being parallel to each other that laser array sends focuses on diffraction grating through convertible lens
On ,-1 order diffraction light and 0 order diffraction light are distributed entire light power by diffraction grating by a certain percentage；0 order diffraction light is collimated
After mirror collimation, total reflective mirror one is all fed back on diffraction grating diffraction again, its diffraction direction adds total reflective mirror two with complete
Anti-mirror one forms vibration modeling structure, and light a part of return laser light array of output forms mould-locking structure, and a part of light is from output
Light path exports.
As the improvement further of such scheme ,-1 order diffraction light and 0 order diffraction light press the overall light of pro rate of 75 25
Beam power.
As the improvement further of such scheme, convertible lens, diffraction grating, collimating mirror, total reflective mirror one have identical
Optical axis.
Further, diffraction grating and described optical axis are 45 degree of angles.
The present invention also provides a kind of semiconductor laser external cavity feedback spectrum beam combination method, and it is for sending to laser array
The multiple laser being parallel to each other realizes spectrum beam combination；Said method comprising the steps of:
Described multiple laser focuses on the diffraction grating through convertible lens；
-1 order diffraction light and 0 order diffraction light are distributed entire light power by diffraction grating by a certain percentage；
After 0 order diffraction light collimated mirror collimation, total reflective mirror one is all fed back on diffraction grating diffraction again, spread out at it
Penetrating and adding total reflective mirror two and total reflective mirror one to form vibration modeling structure on direction, light a part of return laser light array of output is formed
Mould-locking structure, a part of light exports from output light path.
As the improvement further of such scheme ,-1 order diffraction light and 0 order diffraction light press the overall light of pro rate of 75 25
Beam power.
As the improvement further of such scheme, the multiple laser being parallel to each other that laser array sends has different ripples
Long.
As the improvement further of such scheme, convertible lens, diffraction grating, collimating mirror, total reflective mirror one have identical
Optical axis.
Further, diffraction grating and described optical axis are 45 degree of angles.
The semiconductor laser external cavity feedback spectrum beam combination device of the present invention and spectrum beam combination method thereof, may be implemented in employing relatively
The spectrum beam combination of greater efficiency can be obtained in the case of low diffraction efficiency grating.
Brief description
Fig. 1 is the structural representation of the semiconductor laser external cavity feedback spectrum beam combination device that the present invention provides.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, right
The present invention is further elaborated.It should be appreciated that specific embodiment described herein only in order to explaining the present invention, and
It is not used in the restriction present invention.
Referring to Fig. 1, the semiconductor laser external cavity feedback spectrum beam combination device of present embodiment is for laser array 1
The multiple laser being parallel to each other going out realizes spectrum beam combination.Device includes convertible lens the 2nd, diffraction grating the 3rd, collimating mirror the 4th, total reflective mirror
One 5, total reflective mirror 26.
Convertible lens the 2nd, diffraction grating the 3rd, collimating mirror the 4th, total reflective mirror 1 is arranged on phase the same side of laser array 1, and successively
Being gradually distance from laser array 1, having identical optical axis simultaneously, diffraction grating 3 and described optical axis are 45 degree of angles.Total reflective mirror 26
Being positioned at the top of diffraction grating 3, the output light path of total reflective mirror 26 is the output light path 7 of a part of light of whole device.Laser array
1 multiple laser being parallel to each other sending typically has different wavelength, such as the 1st, the λ of the λ in Fig. 1 the 2nd, λ 3.
Assembly of the invention is in use, its corresponding spectrum beam combination method comprises the following steps:
The multiple laser being parallel to each other that laser array 1 sends focuses on diffraction grating 3 through convertible lens 2；
Diffraction grating 3-1 order diffraction light and 0 order diffraction light are distributed by a certain percentage entire light power (such as 75%:
25%)；
After 0 order diffraction light collimated mirror 4 collimation, total reflective mirror 1 is all fed back on diffraction grating 3 diffraction again, at it
Total reflective mirror 26 and total reflective mirror 1 is added to form vibration modeling structure, light a part of return laser light array of output in diffraction direction
1 formation mould-locking structure, a part of light exports from output light path 7.
Therefore, the semiconductor laser external cavity feedback spectrum beam combination device of the present invention and spectrum beam combination method thereof, may be implemented in
The spectrum beam combination of greater efficiency can be obtained in the case of using relatively low diffraction efficiency grating.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all essences in the present invention
Any modification, equivalent and the improvement etc. made within god and principle, should be included within the scope of the present invention.
Claims (9)
1. a semiconductor laser external cavity feedback spectrum beam combination device, it is for being parallel to each other of sending laser array (1)
Multiple laser realizes spectrum beam combination；It is characterized in that: described device includes convertible lens (2), diffraction grating (3), collimating mirror
(4), total reflective mirror one (5), total reflective mirror two (6)；The multiple laser being parallel to each other that laser array (1) sends is through convertible lens
(2) focusing on diffraction grating (3) ,-1 order diffraction light and 0 order diffraction light are distributed overall light by diffraction grating (3) by a certain percentage
Beam power；All fed back to again spread out on diffraction grating (3) by total reflective mirror one (5) after 0 order diffraction light collimated mirror (4) collimation
Penetrate, its diffraction direction adds total reflective mirror two (6) and total reflective mirror one (5) form vibration modeling structure, a light part for output
Return laser light array (1) forms mould-locking structure, and a part of light exports from output light path (7).
2. semiconductor laser external cavity feedback spectrum beam combination device as claimed in claim 1, it is characterised in that :-1 order diffraction light and
0 order diffraction light presses the pro rate entire light power of 75 25.
3. semiconductor laser external cavity feedback spectrum beam combination device as claimed in claim 1, it is characterised in that: convertible lens (2),
Diffraction grating (3), collimating mirror (4), total reflective mirror one (5) have identical optical axis.
4. semiconductor laser external cavity feedback spectrum beam combination device as claimed in claim 3, it is characterised in that: diffraction grating (3)
It is 45 degree of angles with described optical axis.
5. a semiconductor laser external cavity feedback spectrum beam combination method, it is for being parallel to each other of sending laser array (1)
Multiple laser realizes spectrum beam combination；It is characterized in that: it comprises the following steps:
Described multiple laser focuses on diffraction grating (3) through convertible lens (2)；
-1 order diffraction light and 0 order diffraction light are distributed entire light power by diffraction grating (3) by a certain percentage；
After 0 order diffraction light collimated mirror (4) collimation, total reflective mirror one (5) is all fed back on diffraction grating (3) diffraction again,
Adding total reflective mirror two (6) and total reflective mirror one (5) to form vibration modeling structure in its diffraction direction, a light part for output returns and swashs
Optical arrays (1) forms mould-locking structure, and a part of light exports from output light path (7).
6. semiconductor laser external cavity feedback spectrum beam combination method as claimed in claim 5, it is characterised in that :-1 order diffraction light and
0 order diffraction light presses the pro rate entire light power of 75 25.
7. semiconductor laser external cavity feedback spectrum beam combination method as claimed in claim 5, it is characterised in that: laser array (1)
The multiple laser being parallel to each other sending has different wavelength.
8. semiconductor laser external cavity feedback spectrum beam combination method as claimed in claim 5, it is characterised in that: convertible lens (2),
Diffraction grating (3), collimating mirror (4), total reflective mirror one (5) have identical optical axis.
9. semiconductor laser external cavity feedback spectrum beam combination method as claimed in claim 8, it is characterised in that: diffraction grating (3)
It is 45 degree of angles with described optical axis.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610827968.0A CN106159675A (en) | 2016-09-18 | 2016-09-18 | A kind of semiconductor laser external cavity feedback spectrum beam combination device and spectrum beam combination method thereof |
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| CN201610827968.0A CN106159675A (en) | 2016-09-18 | 2016-09-18 | A kind of semiconductor laser external cavity feedback spectrum beam combination device and spectrum beam combination method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108803065A (en) * | 2018-06-06 | 2018-11-13 | 上海飞博激光科技有限公司 | A kind of intensive fiber array spectrum beam combination device and method |
| CN112582878A (en) * | 2020-12-24 | 2021-03-30 | 湖北科技学院 | Device and method for improving VCSEL microwave modulation efficiency |
| CN114994933A (en) * | 2022-07-19 | 2022-09-02 | 中国科学院长春光学精密机械与物理研究所 | Spectral beam combining device and method |
| CN115128820A (en) * | 2022-08-30 | 2022-09-30 | 中国科学院长春光学精密机械与物理研究所 | Spectral beam combining device and method for chirped reflection volume Bragg grating feedback |
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| CN2271222Y (en) * | 1996-10-22 | 1997-12-24 | 中国科学院物理研究所 | Bidirectional pumping nanosecond pulse optical parameter oscillation amplifying device |
| CN101604818A (en) * | 2009-06-30 | 2009-12-16 | 山东远普光学股份有限公司 | Continuous mode-hop-free tunable grating external-cavity diode laser |
| CN104428962A (en) * | 2012-02-14 | 2015-03-18 | 特拉迪欧德公司 | Two-dimensional multi-beam stabilizer and combining systems and methods |
| CN206022891U (en) * | 2016-09-18 | 2017-03-15 | 苏州长光华芯光电技术有限公司 | A kind of semiconductor laser external cavity feedback spectrum beam combination device |
-
2016
- 2016-09-18 CN CN201610827968.0A patent/CN106159675A/en active Pending
Patent Citations (4)
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| CN2271222Y (en) * | 1996-10-22 | 1997-12-24 | 中国科学院物理研究所 | Bidirectional pumping nanosecond pulse optical parameter oscillation amplifying device |
| CN101604818A (en) * | 2009-06-30 | 2009-12-16 | 山东远普光学股份有限公司 | Continuous mode-hop-free tunable grating external-cavity diode laser |
| CN104428962A (en) * | 2012-02-14 | 2015-03-18 | 特拉迪欧德公司 | Two-dimensional multi-beam stabilizer and combining systems and methods |
| CN206022891U (en) * | 2016-09-18 | 2017-03-15 | 苏州长光华芯光电技术有限公司 | A kind of semiconductor laser external cavity feedback spectrum beam combination device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108803065A (en) * | 2018-06-06 | 2018-11-13 | 上海飞博激光科技有限公司 | A kind of intensive fiber array spectrum beam combination device and method |
| CN112582878A (en) * | 2020-12-24 | 2021-03-30 | 湖北科技学院 | Device and method for improving VCSEL microwave modulation efficiency |
| CN114994933A (en) * | 2022-07-19 | 2022-09-02 | 中国科学院长春光学精密机械与物理研究所 | Spectral beam combining device and method |
| CN114994933B (en) * | 2022-07-19 | 2022-10-21 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
| CN115128820A (en) * | 2022-08-30 | 2022-09-30 | 中国科学院长春光学精密机械与物理研究所 | Spectral beam combining device and method for chirped reflection volume Bragg grating feedback |
| CN115128820B (en) * | 2022-08-30 | 2022-11-08 | 中国科学院长春光学精密机械与物理研究所 | Spectral beam combining device and method for chirped reflection volume Bragg grating feedback |
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Inventor after: Xiao Wei Inventor after: Pan Huadong Inventor after: Gao Jing Inventor after: Liao Xinsheng Inventor after: Zhou Hongwu Inventor after: Yang Song Inventor before: Xiao Wei Inventor before: Pan Huadong Inventor before: Liao Xinsheng Inventor before: Zhou Hongwu Inventor before: Yang Song |
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Effective date of registration: 20180323 Address after: 2 Jiangsu, Huqiu District, Kunlun Road, No. 189, building No. 215163 Applicant after: SUZHOU EVERBRIGHT PHOTONICS TECHNOLOGY Co.,Ltd. Applicant after: SUZHOU GUOKE MEDICAL TECHNOLOGY DEVELOPMENT Co.,Ltd. Address before: 2 Jiangsu, Huqiu District, Kunlun Road, No. 189, building No. 215163 Applicant before: SUZHOU EVERBRIGHT PHOTONICS TECHNOLOGY Co.,Ltd. |
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Application publication date: 20161123 |