CN1061491A - 消除热应力的混合微电子器件 - Google Patents
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Abstract
一种微电子组件,包括一个其上安装有元件的硬
质基片,一个具有一组侧面的元件和一个与所说元件
的至少两个侧面相邻的电功能层,所说的元件与电功
层能之间被一个防护带空间隔开,在防护带下面的基
片体中具有至少一个减小了硬度的区域,这个区域使
得基片能够消除器件受热时所产生的机械应力。
Description
本发明涉及混合微电子器件,其构形使得这种用普通工艺制成的器件中由热产生的应力得到降低。
为了实现高功能密度、高速度和高可靠性工作,微电子器件例如VLSI(超大规模集成电路)硅芯片正越来越多地与基片上内连接的多层结构组合,以形成致密的混合微电子组件。
典型的混合组件包括一个陶瓷基片,其上牢固地安装有一个集成电路(IC)芯片,这个集成电路芯片被电连接到该芯片周围的一组导体层和绝缘层上,这组导体层和绝缘层也牢固地粘附在基片上,但在空间上与上述芯片隔开。
图1和2a表示一种典型的混合组件,其中,用横跨狭窄沟道的压焊引线将芯片与该芯片周围的多层导体和绝缘体进行内连接,芯片和多层结构都牢固地粘附在一个公共的基片上。
这种类型的组件中包含了几种具有不同热膨胀系数和不同弹性模数的材料。该组件的制造温度和工作温度之间的差异导致热应力和变形,这种变形会影响可靠性。由于多层结构内部通常由铜和聚酰亚胺制成的各层以及硅芯片之间的热膨胀系数失配,因此,要消除热应力和变形是十分困难的。
在这种情况下,传统的对策是选择一种在芯片和多层各部分中都产生最小应力的基片材料。但由于不可能使组件的三个主要部分即芯片、多层结构和基片的热膨胀系数同时一致,因此,整个基片上仍然存在复杂的热变形影响。本发明提供了一种改进的基片设计,它减小了这三者之间的变形影响。
本发明涉及一种微电子器件,它包括一个其上安装有一个元件的硬质基片,具有一组侧面的所说元件和一个与所说元件的至少两个侧面相邻的电功能层,所说元件的至少两个侧面与所说的电功能层之间被防护带隔开,在防护带下面的基片体中具有至少一个减小了硬度的区域,这个区域使得基片能够挠曲,从而消除了器件受热时所产生的机械应力。
这里所用的术语“防护带”是指基片未被占用的表面区域,它用来借助结构上的间隙使基片上安装的相邻电功能元件之间绝缘。
附图包括六幅图。图1是一个传统的混合微电子组件的正投影剖视图;图2a是一个传统的混合微电子组件的截面示意图;图2b到2e是按照本发明构形的微电子组件的截面示意图;图3a是传统微电子组件的面内法向应力的示意图,具体是未开槽铝基片上的铜层的面内热应力的分析图;图3b是按照本发明构形的类似微电子组件的面内法向应力的示意图,具体是顶部开槽铝基片上的铜层的面内热应力的分析图;图4是将开槽的基片和未开槽的基片上的面内热应力进行比较的柱状图表;图5是将开槽的基片和未开槽的基片上铜层的面内热应力进行比较的柱状图表;图6是将安装在未开槽的基片上和开槽的基片上的硅芯片的面内热应力进行比较的柱状图表。
Chiou等人的美国专利3325882号和美国专利3428866号涉及到将金属焊点内连接到固体器件上的组件排列和组装方法,固体器件被固定在基片模穴的底面上,以致于在器件周围形成一个间隙,使器件与模穴的壁隔开。这与本发明使用环形槽来消除应力大不相同。
Wiech等人的美国专利437457中,提出在含有一个或多个半导体芯片的模穴的周边上设置一组填充导体的槽以形成一个电汇流条结构。与此相反,本发明沿基片的模穴周边制作多个槽并将这些槽金属化。
Haskell的美国专利4495025涉及一种为了使集成电路之间绝缘而在半导体材料中形成槽的光致抗蚀工艺。由于种种原因,这个专利没有公开或提示基片中槽的作用。
Bar-Cohen在“垂直印刷电路板的自然对流热传递的耦合关系”,IEEE学报,第73卷第9号,1985年9月(Bar-Cohen“Bonding Relations for Natural Convection Heat Transfer from Vertical Print ed Circuit Boards”-Proceedings of the IEEE,Vol.73,No.9,Se ptember 1985.这篇文章中提示,当多个带有元件的印刷线路板上一起相隔很近的时候,其板面机加工成的垂直槽和水平槽能提高组件的热传递特性。但没有说明热-机械的相互影响以及怎样能通过对固定在基片上的各个元件周围的基片进行开槽来将这些影响消除。
本发明是基于以这样的方式制造基片,以致于使所安装的芯片的膨胀率和收缩率与也固定在基片上的保持内连接的组件部分的膨胀率和收缩率相对无关。
本发明的基片包括一个小的、降低了硬度的挠性基片区域,该区域有一个有限的表面区域,其中,该表面区域在防护带的下面占有一个实体空间,防护带将芯片和周围的组件部分隔离开。这个降低了硬质的区域与两个硬质的基片部分相连,其中,一个硬质部分支承芯片,而另一个支承保持内连接的组件部分。挠性的部分在两个硬度部分之间提供了一个可接受的(forgivable)机械连接,其中,固定在一个硬质部分上的芯片几乎能够独立地膨胀和收缩,而与固定在另一个硬质部分上组件的其它部分的膨胀和收缩无关。
作为本发明的一个特征,小的挠性部分可以是一种挠性材料(图2b)或者是由连续的或断续的槽形成的一个薄的部分(图2c-e)。在整个组件中,由组件的其它部分而引起的芯片的热应力和变形是极小的,反之亦然,从而减小了芯片的变化(Changes for chip)和内连接故障。但整个基片或者组件仍然具有传统的外部结构形状,并且其整体结构仍然是十分坚硬的,因此,对它可以用传统的组件安装的方法来处理。
现在参照附图,图1和2a表示传统的混合微电子组件的结构,该组件包括一个惰性的陶瓷基片1,其上牢固地安装有一块集成电路芯片3。基片可以由这样的材料如AlN、SiC、Al2O3、Si、石英、莫来石、堇青石和砷化镓制成。利用粘接层5将芯片3粘接到基片1上,粘接层5本质上可以是无机的和/或有机的。典型的粘接层(也是公知的晶片粘接层)是热塑性的或者热固性的有机聚合物,例如欧洲专利说明书EP88104940.7所公开的那些材料,可参考该说明书选择材料。芯片3周围是绝缘层7,绝缘层7上安装有一组导体信号/电源层9。芯片和绝缘层7被一防护层隔开,芯片3通过一组通常由金或铜等金属制成的细导线11电连接到信号/电源层9上。图1中的基片1还没有按照本发明开槽或者以其它方式消除应力。
图2b到2e表示与图1和2a的器件类似的器件,但不同的是:每个器件都有一个减小了硬度的区域,以便消除由于热而产生的应力。在图2b中,减小了硬度的区域是由一种比基片的其余部分的硬质材料软的固体材料13b组成。图2c表示本发明的一个组件,其中,减小了硬度的区域是由一个槽13c构成的,槽13c从基片的顶面一直开到基片厚度的大约80%的位置。槽可以是连续地环绕芯片的外边缘,或者是断续的或不连续的,只要达到足以消除应力的程度。
图2d表示本发明的一个组件,其中,减小了硬度的区域由两个槽13d构成,一个从基片的顶面伸入基片内,另一个从基片的底面伸入基片内。
图2e表示一个类似的组件,其中,减小了硬度的区域是一个单一的从基片的底面伸入基片内的槽13e,
如上所述,减小了硬度的一个或多个区域可以连续地或断续地环绕元件的周边,只要减小了硬度的区域足以使应力消除到所要求的程度。特别是,最好基片中减小了硬度的部分的弹性模数与基片其它部分的弹性模数之比(模数比)小于0.3。然而,为了不过多地降低基片的机械强度并且为了使它不容易折断,构成减小了硬度区域的槽或者其它构形应该不伸过基片厚度的80%。这里所用的术语“硬质基片”是指在按照本发明作改进之前弹性模数至少为10Gpa的基片。
减小了硬度的区域可以采用各种构形。例如可将它们做成园底的或方底的,它们的侧面可以是垂直的或者倾斜的。通常,槽的侧面不需要与防护面的边缘和芯片的外边缘相对应。不过,这样的构形是最好的。首先要考虑的是减小了硬度的区域是否足够大以使模数比低于0.3并最好低于0.1。对此模数比指标的符合,可以通过直接测量模数容易地确定,或者可以利用计算机模拟和分析系统来确定。
基片可以简单地由一种单一的如上所述的基体材料制成,或者它可以是一种在基体材料的基质中弥散着粒子或者纤维的组合材料,或者是基体材料的混合物。可以用纤维来作基片的填充材料,以增加基片的强度。另一方面,可以加入一些导热材料,以便还能够提高基片把微电子元件上的热量传导出去的能力。通常基片的厚度大约为40-80密耳,其中典型的厚度为60密耳。基片上的热应力与厚度成正比,而周围绝缘层的应力与基片的厚度成反比。
由于微电子芯片是引起热机械应力的热源,因此最好使减小了硬度的区域(最常用的是槽)尽可能地靠近芯片,但不要在芯片的正下方。通常,环绕元件的槽的宽度不超过大约10密耳,这在大多数的混合组件中通常是防护带的最大宽度。此外,槽的深度应该不超过基片厚度的大约80%。基片的厚度应该至少为10密耳,以防止过多地降低基片的机械强度。
当用槽来作为减小了硬度的区域时,这些槽可以空开着,或者它们可以用挠性材料来填充,例如用高弹性聚合物或者其它的非硬质填充材料来填充。
实施例
在下面的表1中给出了从170℃冷却到20℃所引起的面内最大热应力的数据。单个芯片的混合组件包括一铜接地层和一块用聚合物晶片粘接剂安装在铝基片上的集成电路芯片。由于测量这样的混合器件的实际面内应力在技术上是困难的,因此,这些数据是基于公知的各个元件的总综合误差(TCE)特性,由每个部分变形的有限元模拟而得到的。模拟所用的元件尺寸如下:
集成电路芯片 1.27×1.27×0.051厘米
基片 3.81×3.81×0.153厘米
叠片 (两面带有1.53×1.53厘米的模穴)
铜层 3.81×3.81×0.0036厘米
绝缘层 3.81×3.81×0.0025厘米
粘接层 3.81×3.81×0.0025厘米
表1中同时给出了槽的尺寸和计算得到的最大应力。在表1中,所列的数据表示将铜层、晶片粘接层和晶片本身加热到170℃,然后在环境温度下冷却到20℃时,它们各自的最大面内热应力。特别是,这些数据分别对应于未开槽的基片上的元件、三种带槽的基片上的元件以及几种槽的尺寸。这些数据表明:所有三种构形的槽(单个向上开的槽、单个向下开的槽和向上开的双槽)都能有效地减小所有三个元件中的残留面内热应力。但是,向上开的双槽结构是最有效的,向上开的单槽结构明显地比向下开的单槽结构更有效。
表 1
开槽的和未开槽的基片的面内残余应力
一槽的尺寸和结构的影响
组件的元件 铜层 晶片粘接层 晶片
槽的结构 最大应力(MPa)
米径改进(模数9MPa) 213 56 759
单个向上开的槽
50/20(1)166 35 482
50/40 125 32 442
50/50 104 32 443
30/50 119 41 560
15/50 138 47 636
单个向下开的槽
15/50 169 51 689
50/50 165 51 687
向上开的双槽
15/50 117 32 447
(1)宽/深 单位:密耳
上表第二栏所列出的铜层热应力的数据从图4中可以清楚地看出。
Claims (25)
1、一种微电子器件,包括一个其上安装有一个元件的硬质基片,具有一组侧面的所说元件和一个与所说元件的至少两个侧面相邻的电功能层,所说元件的至少两个侧面与所说的电功能层之间被防护带隔开,在防护带下面的基片体中具有至少一个减小了硬度的区域,这个区域使得基片能够挠曲,从而消除了器件受热时所产生的机械应力。
2、权利要求1所说的器件,其中减小了硬度的区域是连续的。
3、权利要求1所说的器件,其中减小了硬度的基片部分的弹性模数与基片其它部分的弹性模数之比(模数比)小于0.3。
4、权利要求3所说的器件,其中模数比小于0.1。
5、权利要求1所说的器件,其中基片具有预定的厚度,减小了硬度的区域具有预定的深度,这个深度不超过基片厚度的80%。
6、权利要求1所说的器件,其中未经改进的基片的弹性模量为至少10Gpa。
7、权利要求1所说的器件,其中减小了硬度的区域具有一个与防护带宽度相应的预定宽度。
8、权利要求7所说的器件,其中减小了硬度的区域从上表面延伸到基片的内部。
9、权利要求7所说的器件,其中减小了硬度的区域从下表面延伸到基片的内部。
10、权利要求1所说的器件,其中具有一组减小了硬度的区域。
11、权利要求10所说的器件,其中减小了硬度的区域从上表面延伸到基片的内部。
12、权利要求10所说的器件,其中减小了硬度的区域交替从上、下表面延伸到基片内部。
13、权利要求12所说的器件,其中减小了硬度的第一区域从上表面延伸到基片内部,并与所说元件的边缘相邻。
14、权利要求1所说的器件,其中减小了硬度的区域是一个槽。
15、权利要求14所说的器件,其中所说的槽是连续的。
16、权利要求1所说的器件,其中减小了硬度的区域是由一组不连续的槽组成的。
17、权利要求14或15所说的器件,其中所说的槽中填充了一种惰性的非硬质固体材料。
18、权利要求1所说的器件,其中减小了硬度的区域由非硬质材料组成,它是基片的一个组成部分。
19、权利要求1所说的器件,其中基片是一个在硬质固体基质中弥散着粒子的复合材料层。
20、权利要求1所说的器件,其中基片是一个在硬质固体基质中散布了纤维的复合材料层。
21、权利要求1所说的器件,其中基片是由AlN、SiC、Al2O3、硅、石英、莫来石、堇青石和砷化镓中选择的陶瓷固体材料构成的。
22、权利要求1所说的器件,其中基片是由硬质聚合材料构成的。
23、权利要求1所说的器件,其中所说的元件是一块集成电路芯片。
24、权利要求1所说的器件,其中所说的电功能层是一绝缘层。
25、权利要求1所说的器件,其中基片上安装有一组元件。
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US58893090A | 1990-09-27 | 1990-09-27 | |
US588,930 | 1990-09-27 |
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CN1061491A true CN1061491A (zh) | 1992-05-27 |
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EP (1) | EP0551395A4 (zh) |
JP (1) | JPH06503207A (zh) |
CN (1) | CN1061491A (zh) |
CA (1) | CA2091465A1 (zh) |
WO (1) | WO1992006495A1 (zh) |
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CN103515347A (zh) * | 2012-06-29 | 2014-01-15 | 环旭电子股份有限公司 | 组装结构 |
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DE4315160A1 (de) * | 1993-05-07 | 1994-11-17 | Bodenseewerk Geraetetech | Halterung für Mikrosysteme |
AU6450096A (en) * | 1995-07-14 | 1997-02-18 | Olin Corporation | Metal ball grid electronic package |
US6404049B1 (en) | 1995-11-28 | 2002-06-11 | Hitachi, Ltd. | Semiconductor device, manufacturing method thereof and mounting board |
DE19609929B4 (de) * | 1996-03-14 | 2006-10-26 | Ixys Semiconductor Gmbh | Leistungshalbleitermodul |
DE19740330A1 (de) * | 1997-09-13 | 1999-03-25 | Bosch Gmbh Robert | Trägerplatte für Mikrohybridschaltungen |
US7221043B1 (en) | 2000-10-20 | 2007-05-22 | Silverbrook Research Pty Ltd | Integrated circuit carrier with recesses |
US6710457B1 (en) * | 2000-10-20 | 2004-03-23 | Silverbrook Research Pty Ltd | Integrated circuit carrier |
AU2002236421A1 (en) * | 2002-02-28 | 2003-09-09 | Infineon Technologies Ag | A substrate for a semiconductor device |
DE10361106A1 (de) * | 2003-12-22 | 2005-05-04 | Infineon Technologies Ag | Halbleiterbauteil mit einem Halbleiterchip und einer steifen Umverdrahtungsplatte und Verfahren zur Herstellung derselben |
JP2006300904A (ja) * | 2005-04-25 | 2006-11-02 | Matsushita Electric Works Ltd | 物理量センサ |
DE102006015241A1 (de) * | 2006-03-30 | 2007-06-28 | Infineon Technologies Ag | Halbleiterbauteil mit einem Kunststoffgehäuse und teilweise in Kunststoff eingebetteten Außenkontakten sowie Verfahren zur Herstellung des Halbleiterbauteils |
US8237260B2 (en) | 2008-11-26 | 2012-08-07 | Infineon Technologies Ag | Power semiconductor module with segmented base plate |
JP2011014615A (ja) * | 2009-06-30 | 2011-01-20 | Denso Corp | センサ装置およびその製造方法 |
JP2012019034A (ja) * | 2010-07-07 | 2012-01-26 | Toyota Motor Corp | 半導体パッケージの構造 |
DE102011014584A1 (de) * | 2011-03-21 | 2012-09-27 | Osram Opto Semiconductors Gmbh | Anschlussträger für Halbleiterchips und Halbleiterbauelement |
US9499393B2 (en) | 2015-02-06 | 2016-11-22 | Mks Instruments, Inc. | Stress relief MEMS structure and package |
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JPS58146827A (ja) * | 1982-02-25 | 1983-09-01 | Fuji Electric Co Ltd | 半導体式圧力センサ |
EP0333237A3 (en) * | 1984-05-18 | 1990-03-21 | BRITISH TELECOMMUNICATIONS public limited company | Integrated circuit chip carrier |
US4953001A (en) * | 1985-09-27 | 1990-08-28 | Raytheon Company | Semiconductor device package and packaging method |
-
1991
- 1991-09-18 EP EP19910918553 patent/EP0551395A4/en not_active Withdrawn
- 1991-09-18 JP JP3517867A patent/JPH06503207A/ja active Pending
- 1991-09-18 WO PCT/US1991/006627 patent/WO1992006495A1/en not_active Application Discontinuation
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WO1992006495A1 (en) | 1992-04-16 |
JPH06503207A (ja) | 1994-04-07 |
EP0551395A4 (en) | 1993-08-25 |
EP0551395A1 (en) | 1993-07-21 |
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