CN106129024A - A power semiconductor device module based on heat dissipation design - Google Patents
A power semiconductor device module based on heat dissipation design Download PDFInfo
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- CN106129024A CN106129024A CN201610676666.8A CN201610676666A CN106129024A CN 106129024 A CN106129024 A CN 106129024A CN 201610676666 A CN201610676666 A CN 201610676666A CN 106129024 A CN106129024 A CN 106129024A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 45
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052802 copper Inorganic materials 0.000 claims abstract description 51
- 239000010949 copper Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 238000005476 soldering Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 6
- 229910000679 solder Inorganic materials 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- Engineering & Computer Science (AREA)
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- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
技术领域technical field
本发明属于功率半导体器件领域,具体涉及一种基于散热设计的功率半导体器件模块。The invention belongs to the field of power semiconductor devices, and in particular relates to a power semiconductor device module based on heat dissipation design.
背景技术Background technique
功率半导体器件又称为电力电子器件,主要用于电力电子电路的电能变换。在电力电子器件工作时,会因功率损耗引起器件发热、升温。器件温度过高将缩短器件寿命,甚至烧毁器件,这也是限制电力电子器件电流、容量的重要原因。Power semiconductor devices, also known as power electronic devices, are mainly used for power conversion of power electronic circuits. When power electronic devices are working, the power loss will cause the device to generate heat and heat up. Excessive device temperature will shorten the life of the device, or even burn the device, which is also an important reason for limiting the current and capacity of power electronic devices.
为此,必须考虑功率半导体器件的散热冷却问题,功率半导体器件的散热是电力电子装置设计工作中的重点和难点。铝基板PCB是解决功率半导体器件散热安装问题的常规手段。这种方案需要将功率半导体器件焊接在铝基板上,将控制电路部分焊接在普通PCB上,这样造成两块电路板之间还需使用导线连接才能工作。而且由于铝基板PCB价格的原因,采用这种方式成本很高,而且结构也很繁琐。Therefore, the heat dissipation and cooling of power semiconductor devices must be considered. The heat dissipation of power semiconductor devices is an important and difficult point in the design of power electronic devices. Aluminum substrate PCB is a conventional means to solve the problem of thermal installation of power semiconductor devices. This solution needs to weld the power semiconductor device on the aluminum substrate, and weld the control circuit part on the ordinary PCB, so that the two circuit boards need to be connected by wires to work. Moreover, due to the price of the aluminum substrate PCB, the cost of using this method is very high, and the structure is also very cumbersome.
发明内容Contents of the invention
有鉴于此,本发明的目的在于克服现有技术的不足,提供一种基于散热设计的功率半导体器件模块,实现普通PCB基板和金属散热器一体设计并提高散热效果。In view of this, the object of the present invention is to overcome the deficiencies of the prior art, provide a power semiconductor device module based on heat dissipation design, realize the integrated design of ordinary PCB substrate and metal heat sink, and improve the heat dissipation effect.
为实现以上目的,本发明采用如下技术方案:To achieve the above object, the present invention adopts the following technical solutions:
一种基于散热设计的功率半导体器件模块,包括功率半导体器件、金属散热器和PCB基板,所述PCB基板上设有开口,所述PCB基板正面设有所述功率半导体器件的电路,所述PCB基板背面固定在所述金属散热器上,所述功率半导体器件固定在所述开口中的所述金属散热器上,所述功率半导体器件管脚焊接在所述电路上。A power semiconductor device module based on heat dissipation design, including a power semiconductor device, a metal radiator and a PCB substrate, the PCB substrate is provided with an opening, the front of the PCB substrate is provided with a circuit of the power semiconductor device, and the PCB The back of the substrate is fixed on the metal heat sink, the power semiconductor device is fixed on the metal heat sink in the opening, and the pins of the power semiconductor device are welded on the circuit.
进一步地,所述金属散热器为铜排。Further, the metal radiator is a copper bar.
进一步地,所述功率半导体器件与所述开口互相匹配。Further, the power semiconductor device matches the opening.
进一步地,所述功率半导体器件与所述开口之间具有间隙。Further, there is a gap between the power semiconductor device and the opening.
进一步地,所述金属散热器由铜排和铜块构成,所述PCB基板背面固定在所述铜排上,所述铜块固定在所述开口中的所述铜排上,所述功率半导体器件固定在所述铜块上。Further, the metal heat sink is composed of a copper bar and a copper block, the back of the PCB substrate is fixed on the copper bar, the copper block is fixed on the copper bar in the opening, and the power semiconductor The device is fixed on the copper block.
进一步地,所述铜块与所述开口互相匹配。Further, the copper block matches the opening.
进一步地,所述铜块与所述开口之间具有间隙。Further, there is a gap between the copper block and the opening.
进一步地,所述PCB基板与所述金属散热器之间,以及所述功率半导体器件与所述金属散热器之间分别通过焊锡固定。Further, the PCB substrate and the metal heat sink, and the power semiconductor device and the metal heat sink are respectively fixed by soldering.
进一步地,所述铜排与所述铜块之间通过焊锡固定。Further, the copper bar and the copper block are fixed by soldering.
进一步地,所述铜排与所述铜块为一体结构。Further, the copper bar is integrated with the copper block.
本发明采用以上技术方案,至少具备以下有益效果:The present invention adopts the above technical solutions, and at least has the following beneficial effects:
本发明通过PCB基板设有开口,PCB基板背面固定在金属散热器上,功率半导体器件固定在PCB基板开口中的金属散热器上,实现PCB基板和金属散热器一体设计并提高散热效果,通过本发明可用普通的PCB基板代替铝基板,以降低成本;此外,本发明选用铜排作为散热器,在实现散热效果的同时还可以作为电源线起到载流作用。In the present invention, the PCB substrate is provided with an opening, the back of the PCB substrate is fixed on the metal radiator, and the power semiconductor device is fixed on the metal radiator in the opening of the PCB substrate, so as to realize the integrated design of the PCB substrate and the metal radiator and improve the heat dissipation effect. In the invention, an ordinary PCB substrate can be used to replace the aluminum substrate to reduce costs; in addition, the present invention uses a copper row as a radiator, which can also be used as a power supply line to carry current while realizing the heat dissipation effect.
附图说明Description of drawings
图1为本发明一种基于散热设计的功率半导体器件模块实施方式一的剖面图;1 is a cross-sectional view of Embodiment 1 of a power semiconductor device module based on heat dissipation design in the present invention;
图2为本发明一种基于散热设计的功率半导体器件模块实施方式二的剖面图;FIG. 2 is a cross-sectional view of Embodiment 2 of a power semiconductor device module based on heat dissipation design in the present invention;
图3为本发明一种基于散热设计的功率半导体器件模块实施方式三的剖面图;3 is a cross-sectional view of Embodiment 3 of a power semiconductor device module based on heat dissipation design in the present invention;
图4为本发明一种基于散热设计的功率半导体器件模块实施方式三的剖面图。FIG. 4 is a cross-sectional view of Embodiment 3 of a power semiconductor device module based on heat dissipation design according to the present invention.
图中:1、功率半导体器件;101、管脚;2、金属散热器;201、铜排;202、铜块;3、金属散热器;4、焊锡。In the figure: 1, power semiconductor device; 101, pin; 2, metal radiator; 201, copper bar; 202, copper block; 3, metal radiator; 4, solder.
具体实施方式detailed description
下面通过附图和实施例,对本发明的技术方案做进一步的详细描述。The technical solutions of the present invention will be described in further detail below with reference to the accompanying drawings and embodiments.
如图1和图2所示,本发明提供一种基于散热设计的功率半导体器件模块,包括功率半导体器件1、金属散热器2和金属散热器3,所述PCB基板3上设有开口,所述PCB基板3正面设有所述功率半导体器件1的电路,所述PCB基板3背面固定在所述金属散热器2上,所述功率半导体器件1固定在所述开口中的所述金属散热器2上,所述功率半导体器件1的管脚101焊接在所述电路上。As shown in Figure 1 and Figure 2, the present invention provides a power semiconductor device module based on heat dissipation design, including a power semiconductor device 1, a metal radiator 2 and a metal radiator 3, the PCB substrate 3 is provided with an opening, so The front of the PCB substrate 3 is provided with the circuit of the power semiconductor device 1, the back of the PCB substrate 3 is fixed on the metal radiator 2, and the power semiconductor device 1 is fixed on the metal radiator in the opening. 2, the pins 101 of the power semiconductor device 1 are soldered to the circuit.
可知,本发明通过所述PCB基板设有开口,PCB基板背面固定在金属散热器上,功率半导体器件固定在PCB基板开口中的金属散热器上,实现PCB基板和金属散热器一体设计并提高散热效果。It can be seen that the present invention is provided with an opening through the PCB substrate, the back of the PCB substrate is fixed on the metal radiator, and the power semiconductor device is fixed on the metal radiator in the opening of the PCB substrate, so as to realize the integrated design of the PCB substrate and the metal radiator and improve heat dissipation Effect.
作为本发明的进一步改进,所述金属散热器2为铜排101。As a further improvement of the present invention, the metal radiator 2 is a copper bar 101 .
可以理解的是,本发明选用铜排作为散热器,在实现散热效果的同时还可以作为电源线起到载流作用。It can be understood that the present invention selects the copper row as the heat sink, which can also serve as a power line to carry current while realizing the heat dissipation effect.
进一步地,如图1所示,所述功率半导体器件1与所述开口互相匹配;优选地,如图2所示,所述功率半导体器件1与所述开口之间具有间隙。Further, as shown in FIG. 1 , the power semiconductor device 1 matches the opening; preferably, as shown in FIG. 2 , there is a gap between the power semiconductor device 1 and the opening.
可以理解的是,因各个功率半导体器件形状不一样,将所述功率半导体器件1与所述开口设计为互相匹配,如图1所示,这样装配时便于配对,从而加快组装时间,也能够减少组装出错的几率;而从散热方面考虑,尽量增大散热空间能有效提高散热效果,所以所述功率半导体器件1与所述开口之间具有间隙,如图2所示,以增大散热空间。It can be understood that, because the shapes of each power semiconductor device are different, the power semiconductor device 1 and the opening are designed to match each other, as shown in FIG. The probability of assembly errors; and from the perspective of heat dissipation, increasing the heat dissipation space as much as possible can effectively improve the heat dissipation effect, so there is a gap between the power semiconductor device 1 and the opening, as shown in Figure 2, to increase the heat dissipation space.
如图3和图4所示,作为本发明散热的进一步改进,所述金属散热器2由铜排201和铜块202构成,所述PCB基板3背面固定在所述铜排201上,所述铜块202固定在所述开口中的所述铜排201上,所述功率半导体器件1固定在所述铜块202上,通过加入所述铜块202增大散热面积,同时也将所述功率半导体器件1突出于所述PCB基板3,使本发明实现立体的散热结构,进一步改进散热效果。As shown in Figure 3 and Figure 4, as a further improvement of the heat dissipation of the present invention, the metal heat sink 2 is composed of a copper bar 201 and a copper block 202, and the back of the PCB substrate 3 is fixed on the copper bar 201, the The copper block 202 is fixed on the copper bar 201 in the opening, the power semiconductor device 1 is fixed on the copper block 202, the heat dissipation area is increased by adding the copper block 202, and the power The semiconductor device 1 protrudes from the PCB substrate 3, so that the present invention realizes a three-dimensional heat dissipation structure and further improves the heat dissipation effect.
进一步地,如图3所示,所述铜块202与所述开口互相匹配,这样所述铜块202与所述开口之间不会有导致晃动的间隙,便于固定组装,且不需要额外的定位设备,保证组装的一致性。Further, as shown in FIG. 3 , the copper block 202 matches the opening, so that there is no gap between the copper block 202 and the opening that causes shaking, which is convenient for fixed assembly and does not require additional Position equipment to ensure consistent assembly.
进一步地,如图4所示,所述铜块202与所述开口之间具有间隙,这样从散热方面考虑,尽量增大散热空间能有效提高散热效果。Further, as shown in FIG. 4 , there is a gap between the copper block 202 and the opening, so in terms of heat dissipation, increasing the heat dissipation space as much as possible can effectively improve the heat dissipation effect.
上述提供两种所述铜块202与所述开口设计的方案,具体情况可结合所述功率半导体器件1的发热效果做出符合需要的方案选择。The above provides two schemes for the design of the copper block 202 and the opening, and in specific circumstances, a suitable scheme can be selected in consideration of the heat generation effect of the power semiconductor device 1 .
进一步地,所述PCB基板3与所述金属散热器2之间,以及所述功率半导体器件1与所述金属散热器2之间分别通过焊锡4固定。实际操作中,可采用注入焊锡的方式注入到需要固定的两个面之间,这样可以保证散热面积的最大化,提高散热效果。Further, solder 4 is used to fix between the PCB substrate 3 and the metal heat sink 2 and between the power semiconductor device 1 and the metal heat sink 2 respectively. In actual operation, solder can be injected between the two surfaces that need to be fixed, so as to ensure the maximum heat dissipation area and improve the heat dissipation effect.
所述铜排201与所述铜块202之间通过焊锡4固定,也可采用注入焊锡的方式注入到需要固定的两个面之间,这样可以保证散热面积的最大化,提高散热效果。优选地,为了提高散热效果,减少焊接步骤,所述铜排201与所述铜块202为一体结构。The copper bar 201 and the copper block 202 are fixed by solder 4, and solder can also be injected between the two surfaces to be fixed, so as to ensure the maximum heat dissipation area and improve the heat dissipation effect. Preferably, in order to improve the heat dissipation effect and reduce welding steps, the copper bar 201 and the copper block 202 are integrally structured.
本发明中的PCB基板选用普通的PCB基板,如FR4材质的PCB基板,将铜排、器件和普通的PCB基板设计为一体结构,首先将铜排焊接在PCB上,然后将功率半导体器件的散热面焊接在铜排上,同时它的引脚焊接在PCB上。这样在有效实现散热的前提下,可以替代使用铝PCB基板,以降低成本,而且还可以在一块普通PCB上安装包括功率半导体器件和控制电路元件在内的所有器件。The PCB substrate in the present invention is an ordinary PCB substrate, such as a PCB substrate made of FR4 material, and the copper row, device and ordinary PCB substrate are designed as an integrated structure. First, the copper row is welded on the PCB, and then the heat dissipation of the power semiconductor device The surface is welded on the copper bar, and its pins are welded on the PCB. In this way, under the premise of effectively realizing heat dissipation, the aluminum PCB substrate can be used instead to reduce costs, and all devices including power semiconductor devices and control circuit components can be installed on a common PCB.
以上所述的具体实施方式,对本发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施方式而已,并不用于限定本发明的保护范围,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The specific embodiments described above have further described the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention and are not intended to limit the scope of the present invention. Protection scope, within the spirit and principles of the present invention, any modification, equivalent replacement, improvement, etc., shall be included in the protection scope of the present invention.
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WO2020191650A1 (en) * | 2019-03-27 | 2020-10-01 | 华为技术有限公司 | Heat dissipating assembly and electronic device |
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