CN218123389U

CN218123389U - MOS manages packaging hardware that connects in parallel

Info

Publication number: CN218123389U
Application number: CN202221350227.5U
Authority: CN
Inventors: 任航
Original assignee: Foshan Jiechuang Technology Co ltd
Current assignee: Foshan Jiechuang Technology Co ltd
Priority date: 2022-05-31
Filing date: 2022-05-31
Publication date: 2022-12-23
Anticipated expiration: 2032-05-31

Abstract

The utility model discloses a MOS tube parallel packaging device, which comprises an MOS tube module, a source electrode conductive heat-conducting plate, a drain electrode conductive heat-conducting plate and a circuit board insulated from the source electrode conductive heat-conducting plate, wherein the circuit board is assembled on the source electrode conductive heat-conducting plate; the drain electrode conducting heat-conducting plates are arranged on the two sides of the source electrode conducting heat-conducting plate and are spaced from the drain electrode conducting heat-conducting plates; the two groups of MOS tube modules are respectively welded on the drain electrode conductive heat-conducting plate and comprise a plurality of MOS tubes arranged side by side; the drain electrode of the MOS tube is welded on the drain electrode conductive heat-conducting plate, the grid electrode of the MOS tube is welded on the circuit board, and the source electrode of the MOS tube is welded on the source electrode conductive heat-conducting plate; and the bottom end surface of the source electrode conductive heat conduction plate and/or the bottom end surface of the drain electrode conductive heat conduction plate are/is provided with an insulating heat conduction glue layer. The utility model discloses a MOS pipe's radiating effect is good, can avoid the MOS pipe to damage because of the high temperature to avoid damaging the circuit and influencing the job stabilization nature of circuit.

Description

MOS manages packaging hardware that connects in parallel

Technical Field

The utility model relates to an electron power field technical field especially relates to a parallelly connected packaging hardware of MOS pipe.

Background

With the development of electronic power technology, MOS transistors are widely used as synchronous rectifier transistors of switching power supplies and pulse switches of pulse power supplies due to their advantages of high switching speed, low voltage drop, low loss, small size, and the like. In the application occasion of heavy current, the mode that a plurality of MOS pipes are parallelly connected is mostly adopted, however when the electric current is big, the MOS pipe can generate heat, if the calorific capacity of MOS pipe can not in time conduct effluvium, will lead to the MOS pipe to damage whole circuit, and influence the job stabilization nature of circuit. Therefore, a MOS parallel package device capable of carrying a large current and having a good heat dissipation effect is needed.

SUMMERY OF THE UTILITY MODEL

The utility model aims to solve the technical problem that a parallelly connected packaging hardware of MOS pipe is provided, the radiating effect of MOS pipe is good, can avoid the MOS pipe to damage because of the high temperature to avoid damaging the circuit and influencing the job stabilization nature of circuit.

In order to solve the technical problem, the utility model provides a MOS pipe parallel packaging device, which comprises an MOS pipe module, a source electrode conductive heat-conducting plate, a drain electrode conductive heat-conducting plate and a circuit board insulated from the source electrode conductive heat-conducting plate, wherein the circuit board is assembled on the source electrode conductive heat-conducting plate; the drain electrode conducting heat-conducting plates are arranged on the two sides of the source electrode conducting heat-conducting plate and are spaced from the drain electrode conducting heat-conducting plates; the two groups of MOS tube modules are respectively welded on the drain electrode conductive heat-conducting plate and comprise a plurality of MOS tubes arranged side by side; the drain electrode of the MOS tube is welded on the drain electrode conductive heat-conducting plate, the grid electrode of the MOS tube is welded on the circuit board, and the source electrode of the MOS tube is welded on the source electrode conductive heat-conducting plate; and the bottom end surface of the source electrode conductive heat conduction plate and/or the bottom end surface of the drain electrode conductive heat conduction plate are/is provided with an insulating heat conduction glue layer.

As an improvement of the scheme, the circuit board is of a hollow structure, the middle part of the circuit board is provided with a through hole, and two ends of the circuit board are provided with source electrode mounting holes; the two ends of the source electrode conductive heat-conducting plate are provided with mounting holes corresponding to the source electrode mounting holes.

As an improvement of the scheme, the source electrode heat conduction plate further comprises an electric conduction heat conduction block, and the electric conduction heat conduction block penetrates through the through hole and is installed on the source electrode heat conduction plate.

As an improvement of the scheme, the drain electrode electric conduction and heat conduction plate comprises an electric conduction and heat conduction bottom plate and an electric conduction and heat conduction connecting plate which is integrally formed with the electric conduction and heat conduction bottom plate.

As the improvement of the scheme, the electric and heat conducting connecting plate and the electric and heat conducting bottom plate are arranged at a right angle.

As an improvement of the scheme, the MOS tubes are close to or abutted against each other.

As the improvement of above-mentioned scheme, the both ends that the circuit board is close to both sides MOS pipe module are all equipped with a plurality of grid weld parts at the interval, and the grid weld part corresponds the welding with the grid of MOS pipe.

As an improvement of the scheme, the upper surface of the edge of one end of the source electrode conducting heat-conducting plate, which is close to the MOS tube, and the upper surface of the edge of one end of the drain electrode conducting heat-conducting plate, which is close to the source electrode conducting heat-conducting plate are both provided with tin coatings.

Implement the utility model discloses, following beneficial effect has:

the two groups of MOS tube modules of the utility model are respectively welded on the corresponding drain electrode conductive heat-conducting plates, the drain electrodes and the source electrodes in the two groups of MOS tube modules are respectively welded on the corresponding drain electrode conductive heat-conducting plates and the source electrode conductive heat-conducting plates, and the MOS tube modules on the two sides are radiated through the drain electrode conductive heat-conducting plates on the two sides and the source electrode conductive heat-conducting plates in the middle part, so that the radiating effect of the MOS tube modules is improved; and the bottom face of the source electrode conductive heat conduction plate and/or the bottom face of the drain electrode conductive heat conduction plate are/is provided with an insulating heat conduction glue layer, so that the source electrode conductive heat conduction plate and/or the drain electrode conductive heat conduction plate can be directly arranged on the radiator, the heat dissipation effect of the MOS tube module can be further improved through the radiator, the MOS tube is prevented from being damaged due to overhigh temperature, and the circuit is prevented from being damaged and the working stability of the circuit is prevented from being influenced.

In addition, the two groups of MOS tube modules can bear larger current and improve output power, the number of MOS tubes in the MOS tube modules can be integrated in a user-defined mode according to requirements, and the MOS tube module is convenient and simple and has high application flexibility; the MOS tube module can also be maintained or replaced by one or more MOS tubes, so that the maintenance is convenient, and the parallel connection packaging structure of the MOS tube module is simple and the packaging difficulty is low.

Drawings

Fig. 1 is an exploded schematic view of a MOS transistor parallel packaging apparatus provided by the present invention;

fig. 2 and fig. 3 are schematic structural diagrams of a MOS transistor parallel packaging apparatus provided by the present invention;

fig. 4 is a schematic structural diagram of a MOS transistor provided by the present invention.

Detailed Description

To make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings. Only this statement, the utility model discloses the upper and lower, left and right, preceding, back, inside and outside equidirectional wording that appears or will appear in the text only uses the utility model discloses an attached drawing is the benchmark, and it is not right the utility model discloses a concrete restriction.

As shown in fig. 1-4, the embodiment of the present invention provides a MOS transistor parallel packaging apparatus, which includes a MOS transistor module 1, a source electrode conductive thermal conductive plate 2, a drain electrode conductive thermal conductive plate 3, and a circuit board 4 insulated from the source electrode conductive thermal conductive plate 2, wherein the circuit board 4 is assembled on the source electrode conductive thermal conductive plate 2; the drain electrode conducting heat-conducting plate 3 is arranged on both sides of the source electrode conducting heat-conducting plate 2, and the source electrode conducting heat-conducting plate 2 and the drain electrode conducting heat-conducting plate 3 are arranged at intervals; two sets of MOS pipe module 1 weld respectively on the electrically conductive heat-conducting plate of drain electrode 3, and MOS pipe module 1 is including a plurality of MOS pipes 5 that set up side by side. The drain 51 of the MOS tube 5 is welded on the drain conductive heat conducting plate 3, the gate 52 of the MOS tube 5 is welded on the circuit board 4, and the source 53 of the MOS tube 5 is welded on the source conductive heat conducting plate 2. Wherein, the upper surface of the edge of one end of the drain electrode conductive heat-conducting plate 3 close to the MOS tube 5 and the upper surface of the edge of one end of the source electrode conductive heat-conducting plate 2 close to the drain electrode conductive heat-conducting plate 3 are both provided with tin plating layers, and the drain electrode 51 and the source electrode 53 of the MOS tube 5 are respectively welded with the corresponding tin plating layers.

The MOS tube modules 1 on the two sides are radiated through the drain electrode conductive heat-conducting plates 3 on the two sides and the source electrode conductive heat-conducting plate 2 in the middle, so that the radiating effect of the MOS tube modules 1 is improved; and the bottom face of the source electrode conductive heat conduction plate 2 and/or the bottom face of the drain electrode conductive heat conduction plate 3 are/is provided with an insulating heat conduction glue layer, so that the source electrode conductive heat conduction plate 2 and/or the drain electrode conductive heat conduction plate 3 can be directly arranged on a radiator, the radiating effect of the MOS tube module 1 can be further improved through the radiator, and the MOS tube 5 is prevented from being damaged due to overhigh temperature.

Specifically, the circuit board 4 is a hollow structure, a through hole 41 is formed in the middle of the circuit board 4, and source mounting holes 42 are formed in two ends of the circuit board 4; the source conductive heat-conducting plate 2 is provided at both ends thereof with mounting holes 21 corresponding to the source mounting holes 42, so that the circuit board 4 is assembled on the source conductive heat-conducting plate 2. The present embodiment further includes an electrically and thermally conductive block 6, and the electrically and thermally conductive block 6 passes through the through hole 41 and is mounted on the source electrically and thermally conductive plate 2. The setting electrically conductive heat conduction piece 6 can increase the heat radiating area who contacts with the air on the one hand, improves MOS pipe module 1's radiating effect, and on the other hand can be convenient for be connected with external circuit through bellied electrically conductive heat conduction piece 6.

Wherein, the drain electrode heat conduction plate 3 of any side includes the electrically and thermally conductive bottom plate 31 and the electrically and thermally conductive connecting plate 32 with the electrically and thermally conductive bottom plate 31 integrated into one piece, and the electrically and thermally conductive connecting plate 32 is the right angle setting with the electrically and thermally conductive bottom plate 31 to increase heat radiating area, improve the radiating effect of MOS pipe module 1, be convenient for moreover through electrically and thermally conductive connecting plate 32 and external circuit connection. In other embodiments, the drain conductive thermal conductive plates 3 on both sides include a conductive thermal conductive base plate 31 and a conductive thermal conductive connecting plate 32 integrally formed with the conductive thermal conductive base plate 31, and the conductive thermal conductive connecting plate 32 and the conductive thermal conductive base plate 31 are arranged at a right angle, so as to further improve the heat dissipation effect of the MOS transistor module 1.

In order to make the MOS transistor module 1 occupy small volume. Mutual butt between a plurality of MOS pipes 5, no interval between two adjacent MOS pipes 5, occupation space is little, and the source electrode that matches with MOS pipe module 1 moreover conducts heat-conducting plate 2, the drain electrode conducts heat-conducting plate 3 and circuit board 4 is small to make MOS pipe packaging hardware's that connects in parallel whole small, in order to install on relevant product better.

Preferably, a plurality of gate soldering portions 43 are disposed at intervals at two ends of the circuit board 4 close to the MOS transistor modules 1 at two sides, and the gate soldering portions 43 are correspondingly soldered to the gates 52 of the MOS transistors 5, so as to improve the stability of the electrical connection between the MOS transistors 5 and the circuit board 4.

It should be noted that the circuit board 4 is preferably a PCB having an insulating layer on the bottom surface, but this is not the case, and the circuit board 4 having an insulating layer on the bottom surface may be selected according to actual situations. The drain electrode conductive heat-conducting plate 3, the source electrode conductive heat-conducting plate 2 and the conductive heat-conducting block 6 are copper plates, the specific heat capacity of the copper plates is large, the heat conductivity coefficient is high, heat emitted by the MOS tube 55 can be rapidly led out, and the heat dissipation effect of the MOS tube module 1 is improved.

Preferably, the two groups of MOS tube modules 1 can bear larger current and improve output power, the number of MOS tubes 5 in the MOS tube modules 1 can be integrated in a user-defined manner according to requirements, and the MOS tube module is convenient and simple and has high application flexibility; the single or a plurality of MOS tubes 5 can be maintained or replaced, the maintenance is convenient, the parallel packaging structure of the MOS tube module 1 is simple, and the packaging difficulty is low.

The MOS tube parallel packaging device of the utility model can radiate the MOS tube modules 1 at two sides through the drain electrode conductive and heat-conducting plates 3 at two sides, the source electrode conductive and heat-conducting plate 2 at the middle part and the conductive and heat-conducting block 6, thereby improving the radiating effect of the MOS tube modules 1; and the bottom face of the source electrode conductive heat conduction plate 2 and/or the bottom face of the drain electrode conductive heat conduction plate 3 are/is provided with an insulating heat conduction glue layer, so that the source electrode conductive heat conduction plate 2 and/or the drain electrode conductive heat conduction plate 3 can be directly arranged on a radiator, the radiating effect of the MOS tube module 1 can be further improved through the radiator, the MOS tube 5 is prevented from being damaged due to overhigh temperature, and the circuit damage and the working stability of the circuit are avoided.

The above disclosure is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the scope of the invention, which is defined by the appended claims.

Claims

1. A MOS tube parallel connection packaging device is characterized by comprising an MOS tube module, a source electrode conductive heat-conducting plate, a drain electrode conductive heat-conducting plate and a circuit board insulated from the source electrode conductive heat-conducting plate, wherein the circuit board is assembled on the source electrode conductive heat-conducting plate;

the drain electrode conductive heat conduction plate is arranged on each of two sides of the source electrode conductive heat conduction plate, and the source electrode conductive heat conduction plate and the drain electrode conductive heat conduction plate are arranged at intervals;

the two groups of MOS tube modules are respectively welded on the drain electrode conductive heat-conducting plate, and each MOS tube module comprises a plurality of MOS tubes arranged side by side;

the drain electrode of the MOS tube is welded on the drain electrode conductive heat-conducting plate, the grid electrode of the MOS tube is welded on the circuit board, and the source electrode of the MOS tube is welded on the source electrode conductive heat-conducting plate;

and an insulating heat-conducting adhesive layer is arranged on the bottom end surface of the source electrode heat-conducting plate and/or the bottom end surface of the drain electrode heat-conducting plate.

2. The MOS tube parallel packaging device of claim 1, wherein the circuit board is a hollow structure, a through hole is formed in the middle of the circuit board, and source mounting holes are formed in both ends of the circuit board;

and mounting holes corresponding to the source electrode mounting holes are formed in the two ends of the source electrode conductive heat-conducting plate.

3. The device of claim 2, further comprising an electrically conductive and thermally conductive block that passes through the opening and is mounted on the source conductive and thermally conductive plate.

4. The device of claim 1, wherein the drain conductive and thermal conductive plate comprises a conductive and thermal conductive base plate and a conductive and thermal conductive connecting plate integrally formed with the conductive and thermal conductive base plate.

5. The device of claim 4, wherein the electrically and thermally conductive connecting plate is disposed at a right angle to the electrically and thermally conductive bottom plate.

6. The device of claim 1, wherein the plurality of MOS transistors are close to or abut each other.

7. The MOS transistor parallel packaging device of claim 1, wherein a plurality of gate welding portions are disposed at intervals at two ends of the circuit board close to the MOS transistor modules at two sides, and the gate welding portions are welded to the gates of the MOS transistors correspondingly.

8. The MOS tube parallel packaging device of claim 1, wherein the upper surface of the edge of the source electrode conducting heat conducting plate close to the MOS tube and the upper surface of the edge of the drain electrode conducting heat conducting plate close to the source electrode conducting heat conducting plate are both provided with tin plating.