CN105958960A - Crystal oscillator and production method of crystal oscillator - Google Patents
Crystal oscillator and production method of crystal oscillator Download PDFInfo
- Publication number
- CN105958960A CN105958960A CN201610509190.9A CN201610509190A CN105958960A CN 105958960 A CN105958960 A CN 105958960A CN 201610509190 A CN201610509190 A CN 201610509190A CN 105958960 A CN105958960 A CN 105958960A
- Authority
- CN
- China
- Prior art keywords
- wafer
- upper cover
- insullac
- pedestal
- conduction upper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000003466 welding Methods 0.000 claims abstract description 13
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000011034 rock crystal Substances 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 9
- 238000005476 soldering Methods 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000001723 curing Methods 0.000 claims description 5
- 238000005253 cladding Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000010849 ion bombardment Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 8
- 239000003973 paint Substances 0.000 abstract description 6
- 238000005096 rolling process Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 6
- 230000000739 chaotic effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a crystal oscillator and a production method of the crystal oscillator. The crystal oscillator comprises a base, a conductive upper cover arranged on the top of the base, a crystal plate arranged in the base and two pads arranged at the bottom of the base. The base is equipped with a containing cavity located under the conductive upper cover. Two connection welding spots arranged at the bottom of the containing cavity are correspondingly connected with the pads. The crystal plate is arranged in the containing cavity. An electrode arranged on the surface of the crystal plate is connected with one of the connection welding spots. A preset position is arranged on the bottom surface of the conductive upper cover and is located above the crystal plate. Insulation paint is coated at the preset position. Through adoption of the insulation paint at the preset position, the crystal plate and the conductive upper cover are insulated; and the bad problems such as disordered time sequence of a mobile phone due to the short circuit over the ground are effectively solved. The short circuit over the ground results from collision of the crystal plate and the conductive upper cover in the fall-off and rolling processes.
Description
Technical field
The present invention relates to electronic applications, especially a kind of crystal oscillator and manufacture method thereof.
Background technology
Crystal oscillator is the general designation of quartz-crystal resonator and quartz oscillator, and it is to utilize to have piezoelectric effect
Quartz crystal slice manufacture, its effect is to produce original clock frequency, through different frequency generators
Zoom in or out after produce different bus frequencies.Owing to crystal oscillator has, volume is little, lightweight, reliability
High, frequency stability advantages of higher, is applied in the consumer electronics such as mobile phone, pad.
At present the structure of crystal oscillator is as it is shown in figure 1, include pedestal, be located at the conduction upper cover at pedestal top, be located at
Wafer in pedestal and be located at two pads of base bottom, described pedestal has accommodating in conduction upper cover
Chamber, is provided with two connection welding connections corresponding with described pad bottom containing cavity, described wafer is located at described appearance
Putting intracavity, wafer surface is provided with electrode and is connected with one of them connection welding, and described conduction upper cover is welded on base
On seat.Its manufacturing process is that base of ceramic, wafer and conduction upper cover are passed through adhesive or solder according to life
Product processing procedure links together.But conduction upper cover is conductor, falling, in the test of cylinder iso-stress, crystal oscillator
Bulk deformation causes wafer and upper cover instant shock to cause shorted to earth, thus causes mobile phone sequential confusion etc. no
Good phenomenon；It is, thus, sought for the problem that a kind of new scheme improves wafer distortion and conduction upper cover short circuit.
Summary of the invention
In order to overcome in prior art the wafer falling, during cylinder easily with conduction upper cover collision short circuit
Problem, the embodiment of the present invention provide a kind of crystal oscillator and production method, can be effectively to wafer and conduction
Upper cover carries out insulation processing, prevents wafer from causing shorted to earth with conduction upper cover collision, thus when causing mobile phone
The bad phenomenon such as sequence is chaotic.
A kind of crystal oscillator that the present invention provides, the conduction upper cover including pedestal, being located at pedestal top, is located at pedestal
In wafer and be located at two pads of base bottom, described pedestal has containing cavity in conduction upper cover,
Being provided with two connection welding connections corresponding with described pad bottom containing cavity, described wafer is located at described containing cavity
In, wafer surface is provided with electrode and is connected with connection welding one of them described, wherein, at the bottom of described conduction upper cover
Face, it is arranged over predeterminated position in described wafer, predeterminated position is coated with insullac.
The embodiment of the present invention provide a kind of crystal oscillator, by the insullac on described predeterminated position, make wafer with
Conduction upper cover insulation, effectively solves falling, during cylinder etc., wafer and conduction upper cover collide cause right
Ground short circuit, thus cause the bad problems such as mobile phone sequential is chaotic.
The manufacture method of a kind of crystal oscillator that the present invention provides, comprising:
Synthetic rock crystal is made wafer；
At wafer surface metal cladding, form electrode, and make metal layer thickness reach preset range；
The wafer forming electrode is fixed in the containing cavity of pedestal, and solidifies wafer；
Adjust the thickness of wafer surface electrode, make the frequency of crystal oscillator reach preset requirement；
At the predeterminated position coating insullac of conduction upper cover bottom surface, and insullac is solidified；
Pedestal is carried out soldering and sealing with conduction upper cover.
The manufacture method of a kind of crystal oscillator that the embodiment of the present invention provides, pre-by described conduction upper cover bottom surface
If position coating insullac；Insullac makes wafer and conduction upper cover insulation, and method is simple, can effectively solve
Fall, during cylinder etc., wafer causes shorted to earth with conduction upper cover collision, thus causes mobile phone sequential
The bad problems such as confusion.
Predeterminated position coating insullac in conduction upper cover bottom surface described above, and insullac is solidified
In step, described predeterminated position is positioned at above described wafer, and the area of predeterminated position is less than the opening of containing cavity
Area, and more than the upper surface area of described wafer.
Predeterminated position coating insullac in conduction upper cover bottom surface described above, and insullac is solidified
Step, is specially, with point gum machine, described predeterminated position is coated with insullac.
Predeterminated position coating insullac in conduction upper cover bottom surface described above, and insullac is solidified
Step, is specially and solidifies with ultraviolet.
The step that synthetic rock crystal is made wafer described above, including:
Synthetic rock crystal is cut into LED reverse mounting type by default cutting angle；
Described LED reverse mounting type is ground to the corresponding thickness of predeterminated frequency；
Described LED reverse mounting type is cut into the wafer of pre-set dimension size；
Remove the rough part of wafer surface.
The step of the rough part of removal wafer surface described above, is specially and removes wafer with chemical method for etching
Rough part.
Described above at wafer surface metal cladding, form electrode, and make metal layer thickness reach certain limit
Step, specifically, with ion bom bardment gold target sputtering wafer surface formed Gold plated Layer or with vapour deposition method at wafer
Surface forms silver coating.
Described above the wafer forming electrode is fixed in the containing cavity of pedestal, and solidifies the step of wafer,
Specifically, the electrode of described wafer is connected with any one connection welding bottom containing cavity with conductive silver glue,
And with baking-curing method curing conductive elargol.
The step that pedestal and conduction upper cover carry out soldering and sealing described above, is specially and is put with conduction upper cover by pedestal
Put and carry out soldering and sealing in the environment or vacuum environment of full nitrogen.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, institute in embodiment being described below
Needing the accompanying drawing used to be briefly described, the accompanying drawing in describing below is only some embodiments of the present invention
Accompanying drawing, for those of ordinary skill in the art, on the premise of not paying creative work, also may be used
To obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of crystal oscillator in prior art；
The structural representation of the crystal oscillator that Fig. 2 provides for the embodiment of the present invention one；
The schematic flow sheet of the crystal oscillator manufacture method that Fig. 3 provides for the embodiment of the present invention two；
Described in the crystal oscillator manufacture method that Fig. 4 provides for the embodiment of the present invention two, synthetic rock crystal is made wafer step
Rapid schematic flow sheet.
Detailed description of the invention:
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearer, below
In conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that tool described herein
Body embodiment only in order to explain the present invention, is not intended to limit the present invention.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clearly
Chu, it is fully described by, it is clear that described embodiment is only a part of embodiment of the present invention rather than complete
The embodiment in portion.Based on the embodiment in the present invention, those of ordinary skill in the art are not making creative labor
The every other embodiment obtained under dynamic premise, broadly falls into the scope of protection of the invention.
Embodiment one:
The structural representation of the crystal oscillator that Fig. 2 provides for the embodiment of the present invention, as in figure 2 it is shown, what the present invention provided
A kind of crystal oscillator, the conduction upper cover 1 including pedestal 3, being located at pedestal 3 top, the wafer 2 being located in pedestal 3
And it is located at two pads 4 bottom pedestal 3, described pedestal 3 has containing cavity 5 in conduction upper cover 1,
Being provided with the connection corresponding with described pad 4 of two connection welding 6 bottom containing cavity 5, described wafer 2 is located at described
In containing cavity 5, wafer 2 surface is provided with electrode 8 and is connected with connection welding one of them described 6, wherein, and institute
State conduction upper cover 1 bottom surface, be arranged over predeterminated position 7 in described wafer 2, predeterminated position 7 is coated with absolutely
Edge paint.By the insullac on described predeterminated position 7, wafer 2 is made to insulate with conduction upper cover 1, can efficient solution
Certainly falling, during cylinder etc., wafer 2 collides, with conduction upper cover 1, the problem causing shorted to earth.
Embodiment two:
The schematic flow sheet of the crystal oscillator manufacture method that Fig. 3 provides for the embodiment of the present invention；Fig. 4 is that the present invention is real
Execute the schematic flow sheet that described in the crystal oscillator manufacture method that example provides, synthetic rock crystal is made wafer step.
As in figure 2 it is shown, the manufacture method of a kind of crystal oscillator of present invention offer, comprising:
Synthetic rock crystal is made wafer 2 by step 301；
Step 302, at wafer 2 plating metal on surface layer, forms electrode 8, and makes metal layer thickness reach default
Scope；
The wafer 2 forming electrode 8 is fixed in the containing cavity 5 of pedestal 3 by step 303, and solidifies crystalline substance
Sheet 2；
Step 304 adjusts the thickness of wafer 2 surface electrode 8, makes the frequency of crystal oscillator reach preset requirement；
The step 305 predeterminated position 7 in conduction upper cover 1 bottom surface is coated with insullac, and carries out insullac solid
Change；
Step 306 carries out soldering and sealing to pedestal 3 with conduction upper cover 1.
The manufacture method of a kind of crystal oscillator that the embodiment of the present invention provides, by bottom described conduction upper cover 1
Predeterminated position 7 is coated with insullac, and insullac makes described wafer 2 insulate with conduction upper cover 1, and method is simple,
Can effectively solve falling, during cylinder etc., described wafer 2 and conduction upper cover 1 collision cause the shortest
Road thus the bad problem such as cause mobile phone sequential chaotic.
The step 305 described above predeterminated position 7 in conduction upper cover 1 bottom surface is coated with insullac, and to insulation
Paint carries out the step solidified, and is specially, with point gum machine, described predeterminated position 7 is coated with insullac.
The step 305 described above predeterminated position 7 in conduction upper cover 1 bottom surface is coated with insullac, and to insulation
Paint carries out the step solidified, and is specially and solidifies with ultraviolet.
The step 305 described above predeterminated position 7 in conduction upper cover 1 bottom surface is coated with insullac, and to insulation
Paint carries out in the step solidified, and described predeterminated position 7 is positioned at above described wafer 2, and its area is less than accommodating
The aperture area in chamber 5, and more than the upper surface area of described wafer 2.
Synthetic rock crystal is made the step of wafer 2 by step 301 described above, including:
Synthetic rock crystal is cut into LED reverse mounting type by default cutting angle by step 3011；
Described LED reverse mounting type is ground to the corresponding thickness of predeterminated frequency by step 3012；
Described LED reverse mounting type is cut into the wafer 2 of pre-set dimension size by step 3013；
Step 3014 removes the rough part of wafer 2.
Step 3014 described above removes the step of the rough part of wafer 2, is specially with chemistry erosion
Lithography removes the rough part of wafer 2.
Step 302 described above, at wafer 2 plating metal on surface layer, forms electrode 8, and makes metal layer thickness
Reach the step of preset range, specifically, with ion bom bardment gold target sputtering wafer 2 surface formed Gold plated Layer or
With vapour deposition method at wafer 2 surface formation silver coating.
The wafer 2 forming electrode 8 is fixed in the containing cavity 5 of pedestal 3 by step 303 described above,
And solidify the step of wafer 2, specifically, with conductive silver glue by the electrode 8 of described wafer 2 and containing cavity 5
Any one connection welding 6 of bottom connects, and with baking-curing method curing conductive elargol.
Step 306 described above carries out the step of soldering and sealing to pedestal 3 and conduction upper cover 1, is specially pedestal
3 are placed in the environment of full nitrogen or vacuum environment with conduction upper cover 1 and to carry out soldering and sealing.
In describing the invention, it is to be understood that term " on ", D score, " top ", " end ",
Orientation or the position relationship of the instruction such as " interior ", " outward " are based on orientation shown in the drawings or position relationship,
It is for only for ease of the description present invention and simplifies description rather than instruction or imply that the device of indication or element must
Must have specific orientation, with specific azimuth configuration and operation, therefore it is not intended that limit to the present invention
System.
Above disclosed only one preferred embodiment of the present invention, can not limit this with this certainly
Bright interest field, one of ordinary skill in the art will appreciate that all or part of stream realizing above-described embodiment
Journey, and according to the equivalent variations that the claims in the present invention are made, still fall within the scope that invention is contained.
Claims (10)
1. a crystal oscillator, including pedestal, be located at the conduction upper cover at pedestal top, the wafer that is located in pedestal with
And it being located at two pads of base bottom, described pedestal has containing cavity, bottom containing cavity in conduction upper cover
Being provided with two connection welding connections corresponding with described pad, described wafer is located in described containing cavity, wafer table
Face is provided with electrode and is connected with connection welding one of them described, it is characterised in that described conduction upper cover bottom surface,
It is arranged over predeterminated position in described wafer, predeterminated position is coated with insullac.
2. the manufacture method of a crystal oscillator, it is characterised in that including:
Synthetic rock crystal is made wafer；
At wafer surface metal cladding, form electrode, and make metal layer thickness reach preset range；
The wafer forming electrode is fixed in the containing cavity of pedestal, and solidifies wafer；
Adjust the thickness of wafer surface electrode, make the frequency of crystal oscillator reach preset requirement；
At the predeterminated position coating insullac of conduction upper cover bottom surface, and insullac is solidified；
Pedestal is carried out soldering and sealing with conduction upper cover.
Method the most according to claim 2, it is characterised in that described presetting in conduction upper cover bottom surface
In position coating insullac, and the step solidifying insullac, described predeterminated position is positioned at above wafer,
The area of predeterminated position is less than the aperture area of described containing cavity, and is more than the upper surface area of described wafer.
Method the most according to claim 2, it is characterised in that described presetting in conduction upper cover bottom surface
Position coating insullac, and the step solidifying insullac, be specially with point gum machine described default position
Put coating insullac.
Method the most according to claim 2, it is characterised in that described presetting in conduction upper cover bottom surface
Position coating insullac, and the step solidifying insullac, be specially and solidify with ultraviolet.
6. according to described method arbitrary in claim 2 to 5, it is characterised in that described by synthetic rock crystal
Make the step of wafer, including:
Synthetic rock crystal is cut into LED reverse mounting type by default cutting angle；
Described LED reverse mounting type is ground to the corresponding thickness of predeterminated frequency；
Described LED reverse mounting type is cut into the wafer of pre-set dimension size；
Remove the rough part of wafer surface.
Method the most according to claim 6, it is characterised in that the described rough portion of removal wafer surface
The step divided, is specially and removes the rough part of wafer surface with chemical method for etching.
8. according to described method arbitrary in claim 2 to 5, it is characterised in that described in wafer surface
Metal cladding, forms electrode, and makes metal layer thickness reach a range of step, specifically, use ion
Bombardment gold target sputtering wafer surface forms Gold plated Layer or forms silver coating with vapour deposition method in wafer surface.
9. according to described method arbitrary in claim 2 to 5, it is characterised in that described will form electricity
The wafer of pole is fixed in the containing cavity of pedestal, and solidifies in the step of wafer, specifically, use conductive silver glue
The electrode of described wafer is connected with any one connection welding bottom containing cavity, and solid by baking-curing method
Change conductive silver glue.
10. according to described method arbitrary in claim 2 to 5, it is characterised in that described to pedestal with
Conduction upper cover carries out the step of soldering and sealing, be specially pedestal and conduction upper cover are placed on full nitrogen environment or
Vacuum environment carries out soldering and sealing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610509190.9A CN105958960A (en) | 2016-06-29 | 2016-06-29 | Crystal oscillator and production method of crystal oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610509190.9A CN105958960A (en) | 2016-06-29 | 2016-06-29 | Crystal oscillator and production method of crystal oscillator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105958960A true CN105958960A (en) | 2016-09-21 |
Family
ID=56903017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610509190.9A Pending CN105958960A (en) | 2016-06-29 | 2016-06-29 | Crystal oscillator and production method of crystal oscillator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105958960A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111074227A (en) * | 2019-11-21 | 2020-04-28 | 南京中电熊猫晶体科技有限公司 | Film coating method for compensating single-side etching asymmetry |
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|---|---|---|---|---|
| GB2058506B (en) * | 1979-09-07 | 1983-09-28 | Hitachi Ltd | Package for electric device |
| JPH0529870A (en) * | 1991-07-23 | 1993-02-05 | Matsushita Electric Ind Co Ltd | Chip-type surface wave device |
| CN1839543A (en) * | 2004-07-14 | 2006-09-27 | 株式会社村田制作所 | piezoelectric device |
| JP2008236023A (en) * | 2007-03-16 | 2008-10-02 | Nec Saitama Ltd | Crystal oscillator |
| CN201639552U (en) * | 2010-02-03 | 2010-11-17 | 台晶(宁波)电子有限公司 | Resin package quartz-crystal resonator |
| CN102377401A (en) * | 2010-08-23 | 2012-03-14 | 精工电子有限公司 | Electronic device, electronic apparatus, and electronic device manufacturing method |
| CN103944532A (en) * | 2013-01-23 | 2014-07-23 | 精工电子有限公司 | Electronic device and method for manufacturing electronic device |
-
2016
- 2016-06-29 CN CN201610509190.9A patent/CN105958960A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2058506B (en) * | 1979-09-07 | 1983-09-28 | Hitachi Ltd | Package for electric device |
| JPH0529870A (en) * | 1991-07-23 | 1993-02-05 | Matsushita Electric Ind Co Ltd | Chip-type surface wave device |
| CN1839543A (en) * | 2004-07-14 | 2006-09-27 | 株式会社村田制作所 | piezoelectric device |
| JP2008236023A (en) * | 2007-03-16 | 2008-10-02 | Nec Saitama Ltd | Crystal oscillator |
| CN201639552U (en) * | 2010-02-03 | 2010-11-17 | 台晶(宁波)电子有限公司 | Resin package quartz-crystal resonator |
| CN102377401A (en) * | 2010-08-23 | 2012-03-14 | 精工电子有限公司 | Electronic device, electronic apparatus, and electronic device manufacturing method |
| CN103944532A (en) * | 2013-01-23 | 2014-07-23 | 精工电子有限公司 | Electronic device and method for manufacturing electronic device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111074227A (en) * | 2019-11-21 | 2020-04-28 | 南京中电熊猫晶体科技有限公司 | Film coating method for compensating single-side etching asymmetry |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160921 |
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