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CN105958959A - Crystal oscillator and production method thereof - Google Patents

Crystal oscillator and production method thereof Download PDF

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Publication number
CN105958959A
CN105958959A CN201610509143.4A CN201610509143A CN105958959A CN 105958959 A CN105958959 A CN 105958959A CN 201610509143 A CN201610509143 A CN 201610509143A CN 105958959 A CN105958959 A CN 105958959A
Authority
CN
China
Prior art keywords
wafer
upper cover
pedestal
conduction upper
containing cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610509143.4A
Other languages
Chinese (zh)
Inventor
孙学彪
吉圣平
李明
周伟杰
羿冬冬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vivo Mobile Communication Co Ltd
Original Assignee
Vivo Mobile Communication Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vivo Mobile Communication Co Ltd filed Critical Vivo Mobile Communication Co Ltd
Priority to CN201610509143.4A priority Critical patent/CN105958959A/en
Publication of CN105958959A publication Critical patent/CN105958959A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

The invention provides a crystal oscillator and a production method thereof. The crystal oscillator comprises a base, a conductive upper cover arranged on the top of the base, a crystal plate arranged in the base and two pads arranged at the bottom of the base. The base is equipped with a containing cavity located under the conductive upper cover. Two connection welding spots arranged at the bottom of the containing cavity are correspondingly connected with the pads. The crystal plate is arranged in the containing cavity. An electrode arranged on the surface of the crystal plate is connected with one of the connection welding spots. A preset position is arranged on the bottom surface of the conductive upper cover and is located above the crystal plate. Insulation paint is coated at the preset position. Through adoption of the insulation paint at the preset position, the crystal plate and the conductive upper cover are insulated; the method is simple; and the bad problems such as disordered time sequence of a mobile phone due to the short circuit over the ground are effectively solved. The short circuit over the ground results from collision of the crystal plate and the conductive upper cover in the fall-off and rolling processes.

Description

A kind of crystal oscillator and its manufacture method
Technical field
The present invention relates to electronic applications, especially a kind of crystal oscillator and its manufacture method.
Background technology
Crystal oscillator is the general designation of quartz-crystal resonator and quartz oscillator, and it is to utilize to have piezoelectric effect Quartz crystal slice manufacture, its effect is to produce original clock frequency, through different frequency generators Zoom in or out after produce different bus frequencies.Owing to crystal oscillator has, volume is little, lightweight, reliability High, frequency stability advantages of higher, is applied in the consumer electronics such as mobile phone, pad.
At present the structure of crystal oscillator is as it is shown in figure 1, include pedestal, be located at the conduction upper cover at pedestal top, be located at Wafer in pedestal and be located at two pads of base bottom, described pedestal has accommodating in conduction upper cover Chamber, is provided with two connection welding connections corresponding with described pad bottom containing cavity, described wafer is located at described appearance Putting intracavity, wafer surface is provided with electrode and is connected with one of them connection welding, and described conduction upper cover is welded on base On seat.Its manufacturing process is that base of ceramic, wafer and conduction upper cover are passed through adhesive or solder according to life Product processing procedure links together.But conduction upper cover is conductor, falling, in the test of cylinder iso-stress, crystal oscillator Bulk deformation causes wafer and upper cover instant shock to cause shorted to earth, thus causes mobile phone sequential confusion etc. no Good phenomenon;It is, thus, sought for the problem that a kind of new scheme improves wafer distortion and conduction upper cover short circuit.
Summary of the invention
In order to overcome in prior art the wafer falling, during cylinder easily with conduction upper cover collision short circuit Problem, the embodiment of the present invention provide a kind of crystal oscillator and production method, can be effectively to wafer and conduction Upper cover carries out insulation processing, prevents wafer from causing shorted to earth with conduction upper cover collision, thus when causing mobile phone The bad phenomenon such as sequence is chaotic.
A kind of crystal oscillator that the present invention provides, the conduction upper cover including pedestal, being located at pedestal top, is located at pedestal In wafer and be located at two pads of base bottom, described pedestal has containing cavity in conduction upper cover, Being provided with two connection welding connections corresponding with described pad bottom containing cavity, described wafer is located at described containing cavity In, wafer surface is provided with electrode and is connected with connection welding one of them described, wherein, at the bottom of described conduction upper cover Face, being arranged over predeterminated position in described wafer, predeterminated position is provided with insulating barrier.
A kind of crystal oscillator that the embodiment of the present invention provides, makes described wafer by the insulating barrier on described predeterminated position With conduction upper cover insulation, can effectively prevent wafer from causing shorted to earth with conduction upper cover collision, thus prevent hands The bad phenomenon such as machine sequential is chaotic.
Insulating barrier described above is anodic oxide coating.
The manufacture method of a kind of crystal oscillator that the present invention provides, comprising:
Synthetic rock crystal is made wafer;
At wafer surface metal cladding, form electrode, and make metal layer thickness reach preset range;
The wafer forming electrode is fixed in the containing cavity of pedestal, and solidifies wafer;
Adjust the thickness of wafer surface electrode, make the frequency of crystal oscillator reach preset requirement;
The predeterminated position of conduction upper cover bottom surface is made Passivation Treatment, forms insulating barrier;
Pedestal is carried out soldering and sealing with conduction upper cover.
The manufacture method of a kind of crystal oscillator that the embodiment of the present invention provides, pre-by described conduction upper cover bottom surface If Passivation Treatment is made in position, form insulating barrier;Insulating barrier makes wafer and conduction upper cover insulation, and method is simple, Can effectively solve falling, during cylinder etc., wafer and conduction upper cover collision cause shorted to earth, thus Cause the bad problems such as mobile phone sequential is chaotic.
Predeterminated position to conduction upper cover bottom surface described above makees Passivation Treatment, forms the step of insulating barrier, tool Body is, the predeterminated position of conduction upper cover bottom surface is made anodized, and described insulating barrier is anodic oxide coating.
Predeterminated position to conduction upper cover bottom surface described above makees Passivation Treatment, is formed in the step of insulating barrier, Described predeterminated position is positioned at above described wafer, and the area of predeterminated position is less than the aperture area of containing cavity, and Upper surface area more than described wafer.
The step that synthetic rock crystal is made wafer described above, including:
Synthetic rock crystal is cut into LED reverse mounting type by default cutting angle;
Described LED reverse mounting type is ground to the corresponding thickness of predeterminated frequency;
Described LED reverse mounting type is cut into the wafer of pre-set dimension size;
Remove the rough part of wafer surface.
The step of the rough part of removal wafer surface described above, is specially and removes wafer with chemical method for etching Rough part.
Described above at wafer surface metal cladding, form electrode, and make metal layer thickness reach certain limit Step, specifically, with ion bom bardment gold target sputtering wafer surface formed Gold plated Layer or with vapour deposition method at wafer Surface forms silver coating.
Described above the wafer forming electrode is fixed in the containing cavity of pedestal, and solidifies the step of wafer, Specifically, the electrode of described wafer is connected with any one connection welding bottom containing cavity with conductive silver glue, And with baking-curing method curing conductive elargol.
The step that pedestal and conduction upper cover carry out soldering and sealing described above, is specially and is put with conduction upper cover by pedestal Put and carry out soldering and sealing in the environment or vacuum environment of full nitrogen.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, institute in embodiment being described below Needing the accompanying drawing used to be briefly described, the accompanying drawing in describing below is only some embodiments of the present invention Accompanying drawing, for those of ordinary skill in the art, on the premise of not paying creative work, also may be used To obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of crystal oscillator in prior art;
The structural representation of the crystal oscillator that Fig. 2 provides for the embodiment of the present invention one;
The schematic flow sheet of the crystal oscillator manufacture method that Fig. 3 provides for the embodiment of the present invention two;
Described in the crystal oscillator manufacture method that Fig. 4 provides for the embodiment of the present invention two, synthetic rock crystal is made wafer step Rapid schematic flow sheet.
Detailed description of the invention:
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearer, below In conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that tool described herein Body embodiment only in order to explain the present invention, is not intended to limit the present invention.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clearly Chu, it is fully described by, it is clear that described embodiment is only a part of embodiment of the present invention rather than complete The embodiment in portion.Based on the embodiment in the present invention, those of ordinary skill in the art are not making creative labor The every other embodiment obtained under dynamic premise, broadly falls into the scope of protection of the invention.
Embodiment one:
The structural representation of the crystal oscillator that Fig. 2 provides for the embodiment of the present invention, as in figure 2 it is shown, what the present invention provided A kind of crystal oscillator, the conduction upper cover 1 including pedestal 3, being located at pedestal 3 top, the wafer 2 being located in pedestal 3 And it is located at two pads 4 bottom pedestal 3, described pedestal 3 has containing cavity 5 in conduction upper cover 1, Being provided with the connection corresponding with described pad 4 of two connection welding 6 bottom containing cavity 5, described wafer 2 is located at described In containing cavity 5, wafer 2 surface is provided with electrode 8 and is connected with connection welding one of them described 6, wherein, and institute Stating conduction upper cover 1 bottom surface, be arranged over predeterminated position 7 in described wafer 2, predeterminated position 7 is provided with insulation Layer.Make described wafer 2 insulate with conduction upper cover 1 by the insulating barrier of predeterminated position 7, can effectively prevent wafer 2 cause shorted to earth with conduction upper cover 1 collision, thus prevent the bad phenomenon such as mobile phone sequential is chaotic.
Insulating barrier described above is anodic oxide coating.
Embodiment two:
The schematic flow sheet of the crystal oscillator manufacture method that Fig. 3 provides for the embodiment of the present invention;Fig. 4 is that the present invention is real Execute the schematic flow sheet that described in the crystal oscillator manufacture method that example provides, synthetic rock crystal is made wafer step.
As in figure 2 it is shown, the manufacture method of a kind of crystal oscillator of present invention offer, comprising:
Synthetic rock crystal is made wafer 2 by step 301;
Step 302, at wafer 2 plating metal on surface layer, forms electrode 8, and makes metal layer thickness reach default Scope;
The wafer 2 forming electrode 8 is fixed in the containing cavity 5 of pedestal 3 by step 303, and solidifies crystalline substance Sheet 2;
Step 304 adjusts the thickness of wafer 2 surface electrode 8, makes the frequency of crystal oscillator reach preset requirement;
The predeterminated position 7 of conduction upper cover 1 bottom surface is made Passivation Treatment by step 305, forms insulating barrier;
Step 306 carries out soldering and sealing to pedestal 3 with conduction upper cover 1.
The manufacture method of a kind of crystal oscillator that the embodiment of the present invention provides, by presetting conduction upper cover 1 bottom surface Passivation Treatment is made in position 7, forms insulating barrier, and insulating barrier makes described wafer 2 insulate with conduction upper cover 1, side Method is simple, can effectively solve falling, during cylinder etc., and described wafer 2 collides with conduction upper cover 1 and leads Cause shorted to earth thus cause the bad problems such as mobile phone sequential is chaotic.
Described in above-mentioned steps 305, the predeterminated position 7 to conduction upper cover 1 bottom surface makees Passivation Treatment, forms insulation The step of layer, specifically, the predeterminated position 7 of conduction upper cover 1 bottom surface is made anodized, described absolutely Edge layer is anodic oxide coating.
Described in above-mentioned steps 305, the predeterminated position 7 to conduction upper cover 1 bottom surface makees Passivation Treatment, forms insulation In the step of layer, described predeterminated position 7 is positioned at above described wafer 2, and its area is opened less than containing cavity 5 Open area, and more than the upper surface area of described wafer 2.
Synthetic rock crystal is made the step of wafer 2 by step 301 described above, including:
Synthetic rock crystal is cut into LED reverse mounting type by default cutting angle by step 3011;
Described LED reverse mounting type is ground to the corresponding thickness of predeterminated frequency by step 3012;
Described LED reverse mounting type is cut into the wafer 2 of pre-set dimension size by step 3013;
Step 3014 removes the rough part of wafer 2.
Step 3014 described above removes the step of the rough part of wafer 2, is specially with chemistry erosion Lithography removes the rough part of wafer 2.
Step 302 described above, at wafer 2 plating metal on surface layer, forms electrode 8, and makes metal layer thickness Reach the step of preset range, specifically, with ion bom bardment gold target sputtering wafer 2 surface formed Gold plated Layer or With vapour deposition method at wafer 2 surface formation silver coating.
The wafer 2 forming electrode 8 is fixed in the containing cavity 5 of pedestal 3 by step 303 described above, And solidify the step of wafer 2, specifically, with conductive silver glue by the electrode 8 of described wafer 2 and containing cavity 5 Any one connection welding 6 of bottom connects, with baking-curing method curing conductive elargol.
Step 306 described above carries out the step of soldering and sealing to pedestal 3 and conduction upper cover 1, is specially pedestal 3 are placed in the environment of full nitrogen or vacuum environment with conduction upper cover 1 and to carry out soldering and sealing.
In describing the invention, it is to be understood that term " on ", D score, " top ", " end ", Orientation or the position relationship of the instruction such as " interior ", " outward " are based on orientation shown in the drawings or position relationship, It is for only for ease of the description present invention and simplifies description rather than instruction or imply that the device of indication or element must Must have specific orientation, with specific azimuth configuration and operation, therefore it is not intended that limit to the present invention System.
Above disclosed only one preferred embodiment of the present invention, can not limit this with this certainly Bright interest field, one of ordinary skill in the art will appreciate that all or part of stream realizing above-described embodiment Journey, and according to the equivalent variations that the claims in the present invention are made, still fall within the scope that invention is contained.

Claims (10)

1. a crystal oscillator, including pedestal, be located at the conduction upper cover at pedestal top, the wafer that is located in pedestal with And it being located at two pads of base bottom, described pedestal has containing cavity, bottom containing cavity in conduction upper cover Being provided with two connection welding connections corresponding with described pad, described wafer is located in described containing cavity, wafer table Face is provided with electrode and is connected with connection welding one of them described, it is characterised in that described conduction upper cover bottom surface, Being arranged over predeterminated position in described wafer, predeterminated position is provided with insulating barrier.
A kind of crystal oscillator the most according to claim 1, it is characterised in that described insulating barrier is anodic oxidation Layer.
3. the manufacture method of a crystal oscillator, it is characterised in that including:
Synthetic rock crystal is made wafer;
At wafer surface metal cladding, form electrode, and make metal layer thickness reach preset range;
The wafer forming electrode is fixed in the containing cavity of pedestal, and solidifies wafer;
Adjust the thickness of wafer surface electrode, make the frequency of crystal oscillator reach preset requirement;
The predeterminated position of conduction upper cover bottom surface is made Passivation Treatment, forms insulating barrier;
Pedestal is carried out soldering and sealing with conduction upper cover.
Method the most according to claim 3, it is characterised in that described to conduction upper cover bottom surface preset Passivation Treatment is made in position, forms the step of insulating barrier, specifically, make the predeterminated position of conduction upper cover bottom surface Anodized, described insulating barrier is anodic oxide coating.
Method the most according to claim 3, it is characterised in that described to conduction upper cover bottom surface preset Passivation Treatment is made in position, is formed in the step of insulating barrier, and described predeterminated position is positioned at above described wafer, in advance If the area of position is less than the aperture area of containing cavity, and more than the upper surface area of described wafer.
6. according to described method arbitrary in claim 3 to 5, it is characterised in that described by synthetic rock crystal Make the step of wafer, including:
Synthetic rock crystal is cut into LED reverse mounting type by default cutting angle;
Described LED reverse mounting type is ground to the corresponding thickness of predeterminated frequency;
Described LED reverse mounting type is cut into the wafer of pre-set dimension size;
Remove the rough part of wafer surface.
Method the most according to claim 3, it is characterised in that the described rough portion of removal wafer surface The step divided, is specially and removes the rough part of wafer surface with chemical method for etching.
8. according to described method arbitrary in claim 3 to 5, it is characterised in that described in wafer surface Metal cladding, forms electrode, and makes metal layer thickness reach a range of step, specifically, use ion Bombardment gold target sputtering wafer surface forms Gold plated Layer or forms silver coating with vapour deposition method in wafer surface.
9. according to described method arbitrary in claim 3 to 5, it is characterised in that described will form electricity The wafer of pole is fixed in the containing cavity of pedestal, and solidifies in the step of wafer, specifically, use conductive silver glue The electrode of described wafer is connected with any one connection welding bottom containing cavity, and solid by baking-curing method Change conductive silver glue.
10. according to described method arbitrary in claim 3 to 5, it is characterised in that described to pedestal with Conduction upper cover carries out the step of soldering and sealing, be specially pedestal and conduction upper cover are placed on full nitrogen environment or Vacuum environment carries out soldering and sealing.
CN201610509143.4A 2016-06-29 2016-06-29 Crystal oscillator and production method thereof Pending CN105958959A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610509143.4A CN105958959A (en) 2016-06-29 2016-06-29 Crystal oscillator and production method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610509143.4A CN105958959A (en) 2016-06-29 2016-06-29 Crystal oscillator and production method thereof

Publications (1)

Publication Number Publication Date
CN105958959A true CN105958959A (en) 2016-09-21

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Country Status (1)

Country Link
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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2058506B (en) * 1979-09-07 1983-09-28 Hitachi Ltd Package for electric device
JPH0529870A (en) * 1991-07-23 1993-02-05 Matsushita Electric Ind Co Ltd Chip-type surface wave device
CN1839543A (en) * 2004-07-14 2006-09-27 株式会社村田制作所 piezoelectric device
JP2008236023A (en) * 2007-03-16 2008-10-02 Nec Saitama Ltd Crystal oscillator
CN201639552U (en) * 2010-02-03 2010-11-17 台晶(宁波)电子有限公司 Resin package quartz-crystal resonator
CN101997510A (en) * 2010-10-18 2011-03-30 台晶(宁波)电子有限公司 Manufacturing method of wafer level encapsulating structure for through-hole vibrator device
CN102377401A (en) * 2010-08-23 2012-03-14 精工电子有限公司 Electronic device, electronic apparatus, and electronic device manufacturing method
CN103081095A (en) * 2010-10-28 2013-05-01 京瓷株式会社 Electronic device
CN103944532A (en) * 2013-01-23 2014-07-23 精工电子有限公司 Electronic device and method for manufacturing electronic device
CN204013436U (en) * 2014-08-08 2014-12-10 深圳市新天源电子有限公司 Carry the quartz-crystal resonator of insulation effect

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2058506B (en) * 1979-09-07 1983-09-28 Hitachi Ltd Package for electric device
JPH0529870A (en) * 1991-07-23 1993-02-05 Matsushita Electric Ind Co Ltd Chip-type surface wave device
CN1839543A (en) * 2004-07-14 2006-09-27 株式会社村田制作所 piezoelectric device
JP2008236023A (en) * 2007-03-16 2008-10-02 Nec Saitama Ltd Crystal oscillator
CN201639552U (en) * 2010-02-03 2010-11-17 台晶(宁波)电子有限公司 Resin package quartz-crystal resonator
CN102377401A (en) * 2010-08-23 2012-03-14 精工电子有限公司 Electronic device, electronic apparatus, and electronic device manufacturing method
CN101997510A (en) * 2010-10-18 2011-03-30 台晶(宁波)电子有限公司 Manufacturing method of wafer level encapsulating structure for through-hole vibrator device
CN103081095A (en) * 2010-10-28 2013-05-01 京瓷株式会社 Electronic device
CN103944532A (en) * 2013-01-23 2014-07-23 精工电子有限公司 Electronic device and method for manufacturing electronic device
CN204013436U (en) * 2014-08-08 2014-12-10 深圳市新天源电子有限公司 Carry the quartz-crystal resonator of insulation effect

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Application publication date: 20160921

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