CN105900225B - The pick device and pick-up method of semiconductor grain - Google Patents
The pick device and pick-up method of semiconductor grain Download PDFInfo
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- CN105900225B CN105900225B CN201480072889.2A CN201480072889A CN105900225B CN 105900225 B CN105900225 B CN 105900225B CN 201480072889 A CN201480072889 A CN 201480072889A CN 105900225 B CN105900225 B CN 105900225B
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- suction opening
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 278
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000005520 cutting process Methods 0.000 claims abstract description 166
- 238000001179 sorption measurement Methods 0.000 claims abstract description 128
- 230000007246 mechanism Effects 0.000 claims abstract description 55
- 238000010521 absorption reaction Methods 0.000 claims abstract description 26
- 239000013078 crystal Substances 0.000 claims abstract description 24
- 238000005336 cracking Methods 0.000 claims abstract description 23
- 238000006073 displacement reaction Methods 0.000 claims description 44
- 238000001514 detection method Methods 0.000 claims description 38
- 230000000274 adsorptive effect Effects 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 33
- 239000013307 optical fiber Substances 0.000 claims description 7
- 238000005086 pumping Methods 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 230000004069 differentiation Effects 0.000 claims description 5
- 238000010009 beating Methods 0.000 claims 2
- 230000033001 locomotion Effects 0.000 description 45
- 230000008859 change Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- 238000005452 bending Methods 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 7
- 230000009471 action Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 230000008014 freezing Effects 0.000 description 4
- 238000007710 freezing Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000009987 spinning Methods 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003434 inspiratory effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Die Bonding (AREA)
Abstract
The present invention relates to a kind of pick device of semiconductor grain and pick-up methods.The pick device of semiconductor grain includes: microscope carrier (20), the adsorption plane (22) comprising absorption cutting sheet (12)；Suction opening (40) is set to the adsorption plane (22) of microscope carrier (20)；It covers (23), is slided along adsorption plane (22) and be opened and closed suction opening (40)；And cracking pressure switching mechanism (80), by the pressure of suction opening (40) in the first pressure P close to vacuum1With the second pressure P close to atmospheric pressure2Between switch, when picking up semi-conductor crystal grain (15), whenever by the pressure of suction opening (40) from first pressure P1It is switched to second pressure P2When, make to cover (23) only to opening direction sliding predetermined distance.Semiconductor grain is inhibited to generate damage and in a effective manner picking up semi-conductor crystal grain as a result,.
Description
Technical field
The present invention relates to a kind of pickups of semiconductor grain (die) for engagement device (bonding device)
The construction and pick-up method of (pick up) device.
Background technique
Semiconductor grain is that the chip (wafer) of 6 inches (inch) or 8 inches of sizes are cut to prescribed level and made
It makes.In cutting, cutting sheet (dicing is overleaf attached not make the semiconductor grain of cutting become mode at random
Sheet it), and using cast-cutting saw (dicing saw) etc. is cut off from face side by chip.Though at this point, being attached at the cutting sheet at the back side
It is slightly cut into but and is not switched off and becomes the state that remain each semiconductor grain.Then, each semiconductor grain of cutting
It seriatim autotomys pitch cutting to be picked, and is delivered to the next steps such as crystal grain engagement.
It proposes that there are as below methods as the method for autotomying pitch cutting picking up semi-conductor crystal grain: cutting sheet being made to be adsorbed in plectane
The surface of the adsorption piece (suction piece) of shape, and it is adsorbed in semiconductor grain in the state of collet (collet), it utilizes
The upper jacking block (block) for being configured at adsorption piece central portion will push up on semiconductor grain, and increase collet, to autotomy pitch cutting
Picking up semi-conductor crystal grain (referring for example to Fig. 9 to Figure 23 of patent document 1).When making semiconductor grain autotomy pitch cutting removing, have
Effect is first to remove the peripheral portion of semiconductor grain, next removes the central portion of semiconductor grain, therefore in patent
Documented by document 1 in the prior art with the following method, that is, upper jacking block is divided into following three block: above pushing up semiconductor die
The block of the centre of the block of part around grain, the block in upper top semiconductor grain center and upper top semiconductor grain, first
Until so that three blocks is risen to specified altitude, the intermediate block with center is set to rise to be higher than the block on periphery thereafter, finally
The block in center is set to rise to be higher than intermediate block.
In addition, it is also proposed that there are as below methods, that is, cutting sheet is made to be adsorbed in disk-shaped top cap (ejector cap)
Surface, and be adsorbed in semiconductor grain in the state of collet rises to each upper jacking block in collet and periphery, centre, center
Until the specified altitude high compared with the surface of top cap, the height of collet is remained into such height thereafter, and according to the upper top of surrounding
Block, intermediate upper jacking block sequence so that jacking block is dropped to the surface position further below compared with top cap, thus from semiconductor grain
It removes cutting sheet (referring for example to patent document 2).
In the situation for removing cutting sheet from semiconductor grain using method documented by patent document 1, patent document 2
When, exist such as recorded in Figure 40, Figure 42 of patent document 1, Figure 44, Fig. 4 A to Fig. 4 D of patent document 2, Fig. 5 A to Fig. 5 D
Lower situation, i.e., semiconductor grain removing before, semiconductor grain maintenance be attached at the state of cutting sheet and together with cutting sheet
Bending deformation.If continuing the peeling action of cutting sheet in the state of semiconductor grain bending deformation, there is semiconductor die
The damaged situation of grain, therefore propose that there are as below methods, i.e., as recorded in Figure 31 of patent document 1, according to the pumping from collet
The variation of the flow of suck and the bending for detecting semiconductor grain, and as recorded in Figure 43 of patent document 1, it is detecting
It is judged as that semiconductor grain deforms when the situation of inspiratory flow, jacking block is made increase jacking block.
In addition, it is also proposed that there are as below methods, i.e., when picking up semi-conductor crystal grain, half picked up is being adsorbed using collet
In the state of semiconductor die, the front end for turning off the lid of the side of suction opening enters from contiguity face, above pushes away cutting sheet and half on one side
Semiconductor die make on one side lid sliding (slide) and after the spaced apart at gaps of the front end of suction opening and lid, with the surface of lid with
The end i.e. rear end side that contiguity face becomes the side that substantially parallel mode opens lid enters from contiguity face, utilizes the surface of lid on one side
Above pushing away cutting sheet and semiconductor grain on one side makes lid slide and successively open suction opening, aspirates open suction opening successively
Cutting sheet and by cutting sheet successively from pick up semiconductor grain remove (referring for example to patent document 3).
[existing technical literature]
[patent document]
Patent document 1: No. 4945339 bulletins of Japanese Patent No.
Patent document 2: No. 8092645 specifications of U.S. Patent No.
Patent document 3: No. 4397429 bulletins of Japanese Patent No.
Summary of the invention
[the invention project to be solved]
In addition, in recent years, semiconductor grain becomes very thin, such as also there are 20 μm or so persons.On the other hand, due to cutting
Piece with a thickness of 100 μm or so, so the thickness of cutting sheet becomes four times of the thickness for semiconductor grain.If making such thin
Semiconductor grain autotomy pitch cutting removing, then be easy significantly more generate follow cutting sheet deformation semiconductor grain change
Documented by the patent document 1-3 in the prior art there is semiconductor grain when autotomying pitch cutting picking up semi-conductor crystal grain and damage in shape
The case where the problem of increasing.
Therefore, it is an object of the invention to inhibit semiconductor grain to generate damage and in a effective manner picking up semi-conductor crystal grain.
[technological means for solving project]
The pick device of semiconductor grain of the invention is characterized in that including: microscope carrier (stage), includes adsorption plane, institute
The back side of adsorption plane absorption cutting sheet is stated, the cutting sheet is pasted with the semiconductor grain to be picked up in front；Suction opening, if
It is placed in the adsorption plane of microscope carrier；Lid slides along adsorption plane and is opened and closed suction opening；And cracking pressure switching mechanism, suction is opened
The pressure of mouth switches between the first pressure close to vacuum and the second pressure close to atmospheric pressure, works as picking up semi-conductor crystal
When grain, after the pressure of suction opening is switched to first pressure from second pressure, whenever by the pressure of suction opening from first
When pressure is switched to second pressure, lid is made only to slide predetermined distance to opening direction.
In the pick device of semiconductor grain of the invention, also preferably, when picking up semi-conductor crystal grain, by adsorption plane
Adsorptive pressure remain vacuum, make lid only to opening direction slide predetermined distance.
In the pick device of semiconductor grain of the invention, also preferably, lid is entered freely with its surface from adsorption plane
Mode be set to microscope carrier, when picking up semi-conductor crystal grain, so that lid is slightly slided and is opened suction opening slightly, and make to cover
Surface enter to the specified altitude high compared with adsorption plane after, make adsorptive pressure vacuum, and will suction after the stipulated time
The pressure of opening is switched to first pressure from second pressure, and makes to be located at the cutting sheet for adsorbing the top being open slightly opened certainly
Semiconductor grain removing.
In the pick device of semiconductor grain of the invention, also preferably, cracking pressure switching mechanism makes to cover initially
Before only sliding predetermined distance to opening direction, repeatedly switch suction opening pressure between first pressure and second pressure.
In the pick device of semiconductor grain of the invention, also preferably, lid is entered freely with its surface from adsorption plane
Mode be set to microscope carrier, and when picking up semi-conductor crystal grain, so that cap surface enters to the specified altitude high compared with adsorption plane
State slides lid.
It also preferably include removing detection unit in the pick device of semiconductor grain of the invention, the removing inspection
It surveys unit and whether pitch cutting is autotomyed to a part of the semiconductor grain positioned at the surface for the suction opening for making lid sliding and opening
Front removing detected, detected by removing detection unit a part of semiconductor grain do not autotomy pitch cutting removing feelings
Slide lid when shape, and by the pressure of suction opening from first pressure be switched to second pressure after by the pressure of suction opening
First pressure is switched to from second pressure again.
Also preferably include: collet in the pick device of semiconductor grain of the invention, adsorbs semiconductor grain；It takes out
Mechanism is inhaled, is connected to collet, and from the area suction air of collet；And flow sensor (sensor), to the pumping of aspirating mechanism
It is emptied throughput to be detected, removes detection unit in the suction air flow amount signal differentiation that flow sensor will be utilized to detect
Obtained by differential signal be more than that the number of defined threshold range is judged as and has removed when becoming the situation of even number, and becomes in number
It is judged as unstripped when the situation of odd number.
It also preferably include sheet material displacement detection sensor in the pick device of semiconductor grain of the invention, it is described
Sheet material displacement detection sensor is set near the end face for the suction opening that the front end covered is abutted when closing suction opening, when making
Lid is when slightly sliding and slightly opening suction opening, to the cutting sheet of the top for being located at the absorption opening slightly opened relative to
The displacement of the detaching direction that connects of adsorption plane is detected, and will be aspirated after the stipulated time when after making adsorptive pressure vacuum
When the pressure of opening is switched to first pressure from second pressure, it is in the sheet material displacement detected by sheet material displacement detection sensor
When defined threshold situation below, makes adsorptive pressure atmosphere opening and be switched to the pressure of suction opening from first pressure
After second pressure, after the stipulated time, the pressure of suction opening is pressed from second when after making adsorptive pressure vacuum again
Power is switched to first pressure, so that the cutting sheet for the top for being located at the absorption opening slightly opened be made to remove from semiconductor grain.
In addition, sheet material displacement detection sensor is also preferably the region for the use of the light transmission rate relative to cutting sheet being 0% to 30%
The light of wavelength is also preferably to use with the light emitting diode (Light of the short wavelength of 0nm to 300nm as light source
Emitting Diode, LED) reflection-type optical fiber (optical fiber) as light source.
The pick-up method of semiconductor grain of the invention is characterized by having: preparing the pick device of semiconductor grain
Step, the pick device of the semiconductor grain include: microscope carrier, include adsorption plane, the back side of the adsorption plane absorption cutting sheet,
The cutting sheet is pasted with the semiconductor grain to be picked up in front；Suction opening is set to the adsorption plane of microscope carrier；Lid, with it
Surface enters mode freely from adsorption plane and is set to microscope carrier, and slides along adsorption plane and be opened and closed suction opening；And opening pressure
Power switching mechanism, by the pressure of suction opening between the first pressure close to vacuum and the second pressure close to atmospheric pressure
Switching；Position alignment step, it is consistent with the one end for the semiconductor grain to be picked up with the front end of the lid of the state of closing, and cover
The consistent mode of the width position of width position and semiconductor grain makes microscope carrier in the direction shifting along adsorption plane
It is dynamic；First strip step makes lid slightly slide and slightly open suction opening, and enters to the surface of lid compared with adsorption plane
After high specified altitude, make adsorptive pressure vacuum, and after the stipulated time by the pressure of suction opening from second pressure
It is switched to first pressure, and removes the cutting sheet for the top for being located at the absorption opening slightly opened from semiconductor grain；And
The adsorptive pressure of adsorption plane is remained vacuum, is switched to by the pressure of suction opening from second pressure by the second strip step
After first pressure, when the pressure of suction opening is switched to second pressure from first pressure, so that the surface of lid enters to
The state of the specified altitude high compared with adsorption plane makes lid only slide predetermined distance to opening direction, and makes to be located at and be opened by sliding
Suction opening surface semiconductor grain a part autotomy pitch cutting front removing.
In the pick-up method of semiconductor grain of the invention, also preferably, cracking pressure switching mechanism makes to cover initially
Before only sliding predetermined distance to opening direction, repeatedly switch suction opening pressure between first pressure and second pressure.
In the pick-up method of semiconductor grain of the invention, also preferably, the pick device of semiconductor grain includes piece
Material displacement detection sensor, the sheet material displacement detection sensor are set to the pumping that the front end covered when closing suction opening is abutted
Near the end face for inhaling opening, and when making lid slightly slide and slightly open suction opening, to positioned at the absorption slightly opened
The cutting sheet of the top of opening is detected relative to the displacement of the detaching direction that connects of adsorption plane, and the first strip step packet
Contain: the first removing judgment step, when after making adsorptive pressure vacuum after the stipulated time by the pressure of suction opening from the
It is more than the feelings of defined threshold in the sheet material displacement detected by sheet material displacement detection sensor when two pressure are switched to first pressure
When shape, it is judged as that the cutting sheet for being located at the top for the absorption opening slightly opened is removed from semiconductor grain, and move by sheet material
When the sheet material that level detection sensor detects shifts situation below for defined threshold, it is judged as that the absorption for being located at and slightly opening is opened
The cutting sheet of the top of mouth is not removed from semiconductor grain；And first retry (retry) step, when passing through the first removing judgement step
When being judged as the cutting sheet positioned at the top for the absorption opening slightly opened not from the situation that semiconductor grain is removed suddenly, make to inhale
After enclosure pressure is atmosphere opening and the pressure of suction opening is switched to second pressure from first pressure, make adsorption pressure again
Power be vacuum after after the stipulated time, the pressure of suction opening is switched to first pressure from second pressure, to make to be located at
The cutting sheet of the top for the absorption opening slightly opened is removed from semiconductor grain.In addition, sheet material displacement detection sensor is also excellent
It is selected as using the light of the wavelength in the region that the light transmission rate relative to cutting sheet is 0% to 30% as light source, and is preferably also
Use the light emitting diode of the short wavelength using 0nm to 300nm as the reflection-type optical fiber of light source.
In the pick-up method of semiconductor grain of the invention, also preferably, the pick device of semiconductor grain includes: folder
Head adsorbs semiconductor grain；Aspirating mechanism, is connected to collet, and from the area suction air of collet；And flow sensor, it is right
The suction air flow amount of aspirating mechanism is detected, and the second strip step includes: the second removing judgment step will utilize flow
Differential signal obtained by the suction air flow amount signal differentiation that sensor detects is more than that the number of defined threshold range becomes even
When several situations, it is judged as that a part of the semiconductor grain of the surface of suction opening for being located at and sliding lid and opening is autotomyed
Pitch cutting front is removed, and when becoming the situation of odd number, is judged as the surface for being located at and making lid sliding and the suction opening of opening
Semiconductor grain a part do not autotomy pitch cutting front removing；And second retry step, is passing through the second removing judgment step
When being judged as that a part of semiconductor grain does not autotomy the situation of pitch cutting front removing, slide lid, and by suction opening
Pressure be switched to second pressure from first pressure after the pressure of suction opening is switched to first pressure from second pressure again,
To make a part of semiconductor grain autotomy the removing of pitch cutting front.
[The effect of invention]
The present invention plays following effect, that is, can inhibit semiconductor grain and generates damage and in a effective manner picking up semi-conductor crystal
Grain.
Detailed description of the invention
Fig. 1 is the explanatory diagram that the system for indicating the pick device of the semiconductor grain in embodiments of the present invention is constituted.
Fig. 2 is the perspective view for indicating the microscope carrier of pick device of the semiconductor grain in embodiments of the present invention.
Fig. 3 is the plan view for indicating the microscope carrier of pick device of the semiconductor grain in embodiments of the present invention.
Fig. 4 A is the detailed figure of the microscope carrier of the pick device of the semiconductor grain in embodiments of the present invention.
Fig. 4 B is that the portion A of Fig. 4 A schemes in detail.
Fig. 5 A is the plan view of the lid of the pick device of the semiconductor grain in embodiments of the present invention.
Fig. 5 B is the elevation of the lid of the pick device of the semiconductor grain in embodiments of the present invention.
Fig. 5 C is that the portion B of Fig. 5 B schemes in detail.
Fig. 6 is the microscope carrier of the pick device of the semiconductor grain in embodiments of the present invention and the sectional view of lid.
Fig. 7 is the explanatory diagram for indicating to be attached at the chip of cutting sheet.
Fig. 8 is the explanatory diagram for indicating to be attached at the semiconductor grain of cutting sheet.
Fig. 9 A is the plan view for indicating the composition of wafer holders (holder).
Fig. 9 B is the elevation for indicating the composition of wafer holders.
Figure 10 A is the elevation for indicating the movement of pick device of the semiconductor grain in embodiments of the present invention.
Figure 10 B is the plan view for indicating the movement of pick device of the semiconductor grain in embodiments of the present invention.
Figure 11 is the explanatory diagram for indicating the movement of pick device of the semiconductor grain in embodiments of the present invention.
Figure 12 A is the elevation for indicating the movement of pick device of the semiconductor grain in embodiments of the present invention.
Figure 12 B is the plan view for indicating the movement of pick device of the semiconductor grain in embodiments of the present invention.
Figure 13 is the explanatory diagram for indicating the movement of pick device of the semiconductor grain in embodiments of the present invention.
Figure 14 is the explanatory diagram for indicating the movement of pick device of the semiconductor grain in embodiments of the present invention.
Figure 15 is the explanatory diagram for indicating the movement of pick device of the semiconductor grain in embodiments of the present invention.
Figure 16 is the explanatory diagram for indicating the movement of pick device of the semiconductor grain in embodiments of the present invention.
Figure 17 is the explanatory diagram for indicating the movement of pick device of the semiconductor grain in embodiments of the present invention.
Figure 18 is the explanatory diagram for indicating the movement of pick device of the semiconductor grain in embodiments of the present invention.
Figure 19 is the explanatory diagram for indicating the movement of pick device of the semiconductor grain in embodiments of the present invention.
Figure 20 is the explanatory diagram for indicating the movement of pick device of the semiconductor grain in embodiments of the present invention.
Figure 21 is the explanatory diagram for indicating the movement of pick device of the semiconductor grain in embodiments of the present invention.
Figure 22 A is the elevation for indicating the movement of pick device of the semiconductor grain in embodiments of the present invention.
Figure 22 B is the plan view for indicating the movement of pick device of the semiconductor grain in embodiments of the present invention.
Collet height when Figure 23 A is the pick device movement for indicating the semiconductor grain in embodiments of the present invention
The curve graph of time change.
Opening width when Figure 23 B is the pick device movement for indicating the semiconductor grain in embodiments of the present invention
The curve graph of time change.
Adsorptive pressure when Figure 23 C is the pick device movement for indicating the semiconductor grain in embodiments of the present invention
The curve graph of time change.
Suction opening when Figure 23 D is the pick device movement for indicating the semiconductor grain in embodiments of the present invention
The curve graph of the time change of pressure.
The air of collet when Figure 23 E is the pick device movement for indicating the semiconductor grain in embodiments of the present invention
Leak the curve graph of the time change of (leak) amount.
Figure 24 A is to indicate that the pick device of the semiconductor grain in embodiments of the present invention carries out removing judgment step
The curve graph of the time change of collet air leakage rate when removing successfully when movement.
Figure 24 B is to indicate that the pick device of the semiconductor grain in embodiments of the present invention carries out removing judgment step
The curve graph of the time change of the differential value of collet air leakage rate when removing successfully when movement.
Figure 24 C is to indicate that the pick device of the semiconductor grain in embodiments of the present invention carries out removing judgment step
The curve graph of the time change of collet air leakage rate when removing when movement is unsuccessful.
Figure 24 D is to indicate that the pick device of the semiconductor grain in embodiments of the present invention carries out removing judgment step
The curve graph of the time change of the differential value of collet air leakage rate when removing when movement is unsuccessful.
Figure 25 A is the folder indicated when the pick device of the semiconductor grain in embodiments of the present invention carries out other movements
The curve graph of the time change of grease head highness.
Figure 25 B is to indicate the opening when pick device of the semiconductor grain in embodiments of the present invention carries out other movements
The curve graph of the time change of mouth width degree.
Figure 25 C is the suction indicated when the pick device of the semiconductor grain in embodiments of the present invention carries out other movements
The curve graph of the time change of enclosure pressure.
Figure 25 D is the pumping indicated when the pick device of the semiconductor grain in embodiments of the present invention carries out other movements
Inhale the curve graph of the time change of the pressure of opening.
Figure 25 E is the folder indicated when the pick device of the semiconductor grain in embodiments of the present invention carries out other movements
The curve graph of the time change of the air leakage rate of head.
Appended drawing reference:
10: wafer holders
11: chip
12: cutting sheet
12a: front
12b: the back side
13: ring
14: gap
15: semiconductor grain
15a: one end
15b: the other end
16: extension ring
18: collet
18a: surface
19: suction hole
20: microscope carrier
21: framework
22: adsorption plane
22a: slot
22b: protrusion
22c, 23g: inclined surface
22d: rib
22e: end face
22f, 23b: side
22g: guiding face
23: lid
23a: front end
23c: rear end
23d: curved surface
23e: chamfering
23f: arm
23h: flat part
24: matrix part
25: driving portion
26: adsorption tank
27: adsorption hole
40: suction opening
41: hole
42: minute opening
43~45: opening opening portion
80: cracking pressure switching mechanism
81,91,101: three-way valve
82,92,102: driving portion
83~85,93~95,103~105: piping
90: adsorptive pressure switching mechanism
100: aspirating mechanism
106: flow sensor
107: sheet material displacement detection sensor
110: wafer holders horizontal direction driving portion
120: microscope carrier up and down direction driving portion
130: collet driving portion
140: vacuum plant
150: control unit
151:CPU
152: storage unit
153: machine/sensor interface
154: data/address bus
155: control program
156: control data
157: position alignment program
158: the first removing programs
159: the second removing programs
300: slider-actuated mechanism
321a: limited block
326: first connecting rod
326a, 329a: engaging slot
326b: axis
326c: roller
327,328,330,330a: pin
329: second connecting rod
331: guide rail
332: sliding block
364: cannelure
370: piston
371: flange
381: motor
383: cam
500: pick device
Specific embodiment
Hereinafter, pick device of the one side referring to schema one in face of the semiconductor grain of embodiments of the present invention is said
It is bright.As shown in Figure 1, the pick device 500 of the semiconductor grain of present embodiment has: wafer holders 10 keep front 12a
It is pasted with the cutting sheet 12 of semiconductor grain 15, and is moved in the horizontal direction；Microscope carrier 20 is configured at the following table of wafer holders 10
Face, and include the adsorption plane 22 adsorbed to the back side 12b of cutting sheet 12；Suction opening 40, as shown in Figure 2 as be set to load
The adsorption plane 22 of platform 20；Lid 23 is opened and closed suction opening 40；Slider-actuated mechanism 300, make as shown in Figure 1 as rotatably freely pacify
Sliding block (slider) 332 equipped with lid 23 slides；Collet 18, picking up semi-conductor crystal grain 15；Cracking pressure switching mechanism 80, switching
The pressure of the suction opening 40 of microscope carrier 20；Adsorptive pressure switching mechanism 90 switches the adsorptive pressure of the adsorption plane 22 of microscope carrier 20；It takes out
Mechanism 100 is inhaled, aspirates air from the surface 18a of collet 18；Vacuum plant 140；Wafer holders horizontal direction driving portion 110,
Wafer holders 10 are driven in the horizontal direction；Microscope carrier up and down direction driving portion 120 drives microscope carrier 20 along the vertical direction；Collet drives
Dynamic portion 130, vertically left and right directions drives collet 18；And control unit 150, carry out the drive of the pick device 500 of semiconductor grain
Dynamic control.
As shown in Figure 1, the slider-actuated mechanism 300 being set to inside microscope carrier 20 includes: first connecting rod (link) 326, by
The driving portion 25 for being installed on the matrix part 24 of microscope carrier 20 drives to the direction retreated relative to adsorption plane 22；Piston (piston)
370, it is sliding freely installed on the framework 21 of microscope carrier 20, and retreat relative to adsorption plane 22；Limited block (stopper) 321a,
It is set to the inside of framework 21, and is sticked in the flange (flange) 371 of piston 370 and limits piston 370 relative to adsorption plane
The movement in 22 advance and retreat direction；Spring 373 connects first connecting rod 326 and piston 370 in the direction retreated relative to adsorption plane 22
It connects；Guide rail (guide rail) 331, is installed on piston 370, it is substantially parallel with adsorption plane 22 and slot 22a extend direction prolong
It stretches；Sliding block 332 is sliding freely installed on guide rail 331；And second connecting rod 329, rotatably freely pacified by pin (pin) 328
Loaded on piston 370, sliding block 332 is connect, and when piston 370 is connected to limited block 321a with first connecting rod 326, first is connected
Bar 326 is converted to the movement in the direction of the guide rail 331 along sliding block 332 relative to the movement in the advance and retreat direction of adsorption plane 22.?
Sliding block 332 is equipped with the pin 330 of the cylindrical shape of the width direction extension along slot 22a, in pin 330 as shown in Fig. 5 A, Fig. 5 B
Rotatably freely engaging has the notch of inverted u-shaped, and the inverted u-shaped notch is set to from the front end 23a of lid 23 to the end face side 22e
Arm (arm) 23f of pendency (overhang).In addition, the pin 327 for being set to one end of second connecting rod 329 enters first connecting rod 326
Engaging slot 326a, and the engaging slot 329a for being set to the other end sandwiches the pin 330a of sliding block 332, thus by sliding block 332 and
The connection of one connecting rod 326.Motor (motor) 381 is installed in the inside of driving portion 25, the motor 381 is to make slider-actuated
Mechanism 300 acts, and is equipped with cam (cam) 383 in the rotary shaft of motor 381, the cam 383 be set to first connecting rod
Roller (roller) 326c of the front end of 326 axis (shaft) 326b is contacted.When motor 381 is to the direction of arrow a shown in FIG. 1
When rotation, slider-actuated mechanism 300 passes through arrow d institute in the vertical motion of first connecting rod 326 shown in arrow b in Fig. 1 and Fig. 1
The spinning movement of the second connecting rod 329 shown, and slide sliding block 332 towards right direction in adsorption plane 22.
The inside pressure of pressure or the framework 21 being connected to suction opening 40 to the suction opening 40 (referring to Fig. 2) of microscope carrier 20
The cracking pressure switching mechanism 80 that power switches over, as shown in Figure 1 as have: three-way valve 81；And driving portion 82, carry out three-way valve
81 driven for opening and closing.The tool of three-way valve 81 there are three port (port), the first port using piping 83 and with the suction that is connected to microscope carrier 20
The framework 21 of opening 40 connects, and the second port is connect, the piping at third port and atmosphere opening using piping 84 with vacuum plant 140
85 connections.Driving portion 82 is in the following way and by the pressure of suction opening 40 in first pressure P1With second pressure P2Between cut
It changes, that is, be connected to the first port with the second port and block third port, and the pressure of suction opening 40 is made to become the close to vacuum
One pressure P1, or be connected to the first port with third port and block the second port, and make the pressure of suction opening 40 become close to
The second pressure P of atmospheric pressure2。
To the adsorptive pressure switching mechanism 90 that the adsorptive pressure of the adsorption plane 22 of microscope carrier 20 switches over, cut with cracking pressure
Structure 80 of changing planes similarly has: three-way valve 91, and there are three ports for tool；And driving portion 92, the driven for opening and closing of progress three-way valve 91, and the
One port using piping 93 and connect with the adsorption hole 27 for the adsorption tank 26 for being connected to microscope carrier 20, the second port using be piped 94 and with it is true
Empty device 140 connects, and the piping 95 of third port and atmosphere opening connects.Driving portion 92 in the following way and by adsorption tank 26 or
The pressure of adsorption plane 22 is in third pressure P3With the 4th pressure P4Between switch, that is, be connected to the first port with the second port and block
Three ports, and the pressure of adsorption tank 26 or adsorption plane 22 is made to become the third pressure P close to vacuum3, or make the first port and the
The connection of three ports and the second port of blocking, and the pressure of adsorption tank 26 or adsorption plane 22 is made to become the 4th pressure close to atmospheric pressure
P4。
From the aspirating mechanism 100 of the surface 18a suction air of collet 18, have in the same manner as cracking pressure switching mechanism 80
Standby: three-way valve 101, there are three ports for tool；And driving portion 102, the driven for opening and closing of three-way valve 101 is carried out, and pass through the pumping of collet 18
Sucker 19 sucks air from surface 18a and the surface 18a of collet 18 is made to become vacuum.By the suction hole 19 and three-dimensional of collet 18
The piping 103 connected between valve 101 is equipped with flow sensor 106, and the flow sensor 106 is to from the surface of collet 18
The air mass flow that 18a is pumped to vacuum plant 140 is detected.
Wafer holders horizontal direction driving portion 110, microscope carrier up and down direction driving portion 120, collet driving portion 130, such as
Using be set to internal motor and gear (gear) and in the horizontal direction or the driving wafer holders 10, microscope carrier such as up and down direction
20, collet 18.In addition, as shown in Figure 1, in the suction opening 40 that the front end 23a of lid 23 is abutted when closing suction opening 40
End face 22e near sheet material displacement detection sensor 107 is installed, the sheet material displacement detection sensor 107 is to cutting sheet
12 are detected relative to the displacement of the detaching direction that connects of adsorption plane 22.It is shone from the light source of sheet material displacement detection sensor 107
The irradiation light penetrated, preferably will not be to cutting sheet, crystal grain adhesive film (the die attach being present between cutting sheet and crystal grain
) and the light transmission rate of the high light of the reflectivity that impacts of the quality of the adhesion agent layer of crystal grain adhesive film, such as cutting sheet film
The light of 0nm to 300nm as 0% to 30% short wavelength, and then the light of preferably 100nm to 300nm, most preferably use
The reflection-type optical fiber person of light emitting diode or blue LED using 200nm to 300nm as light source.In addition, in this reality
It applies and is instantiated in mode using reflection-type optical fiber person, but as long as the light that the exportable reflectivity relative to cutting sheet is high, then can make
With the sensor of other forms.
Control unit 150 includes the central processing unit (Central Processing Unit, CPU) for carrying out calculation process
151, storage unit 152 and machine/sensor interface 153, central processing unit 151, storage unit 152 and machine/sensor interface
153 be the computer (computer) using the connection of data/address bus (data bus) 154.Control is stored in storage unit 152
Program (program) 155, control data 156, position alignment program 157, first remove program 158, second and remove program 159.
Cracking pressure switching mechanism 80, adsorptive pressure switching mechanism 90, aspirating mechanism 100 each three-way valve 81, three-way valve
91, the motor 381, chip of each driving portion 82 of three-way valve 101, driving portion 92, driving portion 102 and slider-actuated mechanism 300 are protected
Holder horizontal direction driving portion 110, microscope carrier up and down direction driving portion 120, collet driving portion 130, vacuum plant 140, connect respectively
It is connected to machine/sensor interface 153, and is driven according to the instruction of control unit 150.In addition, flow sensor 106, sheet material
Displacement detection sensor 107 is connected to machine/sensor interface 153, and detection signal is captured and located by control unit 150
Reason.In addition, a chain-dotted line is indicated machine/sensor interface 153 of control unit 150 and cracking pressure switching mechanism in Fig. 1
80, adsorptive pressure switching mechanism 90, each three-way valve 81 of aspirating mechanism 100, three-way valve 91, three-way valve 101 each driving portion 82,
Motor 381, the wafer holders horizontal direction driving portion 110, microscope carrier of driving portion 92, driving portion 102 and slider-actuated mechanism 300
Up and down direction driving portion 120, collet driving portion 130, vacuum plant 140, flow sensor 106, sheet material displacement detection sensor
The signal wire of 107 connections.
Next, one side is illustrated referring to Fig. 2 to Fig. 6 mono- in face of microscope carrier 20 and the details of lid 23.As shown in Fig. 2, carrying
Platform 20 has: columnar framework 21, and surface has the adsorption plane 22 of absorption cutting sheet 12 on it；Matrix part 24, is set to
The opposite side of the adsorption plane 22 of framework 21；And driving portion 25, it is installed on matrix part 24, and the cunning to the inside for being installed on framework 21
Block driving mechanism 300 is driven.The matrix part 24 of microscope carrier 20 is installed on microscope carrier fixed part (not shown).Have in adsorption plane 22
It is standby: slot 22a, from adsorption plane 22 towards the inner recess of microscope carrier 20；And protrusion 22b, it is set to the periphery of the microscope carrier 20 of slot 22a
Side, and it is more prominent compared with the bottom surface of slot 22a.The side 22f of the slot 22a and guiding face (guide positioned at the two sides of protrusion 22b
Surface) 22g is same plane, and is linearly extended from the inner circumferential side of microscope carrier towards peripheral side.Protrusion 22b is located at guiding
It between the 22g of face, and is scale flatly with surface, height is less than the depth of slot 22a.The bottom surface of slot 22a and protrusion 22b
Surface using from the bottom surface of slot 22a towards the surface of protrusion 22b extend inclined surface 22c connection.It is arranged in the bottom surface of slot 22a
There are two holes 41 being connected to inside microscope carrier 20, the microscope carrier outer surface side in the center and hole 41 in hole 41 is provided with rib (rib)
22d。
Lid 23 is installed in slot 22a, the lid 23 is that the width between slot 22a and the face of guiding face 22g is roughly the same
Width, and slided from slot 22a along the direction of protrusion 22b.Lid 23 along glide direction towards slot 22a end face 22e side
End for front end 23a, and the side of opening lid 23 is rear end 23c.Lid 23 has: flat part 23h, is tabular, and semiconductor die
Grain 15 loads thereon across cutting sheet 12；And inclined surface 23g, it is connected to flat part 23h and is adsorbed certainly facing towards lower direction
Inclination.The length of the glide direction for being shorter in length than slot 22a of the glide direction of lid 23, the thickness and slot of the flat part 23h of lid 23
The depth of 22a is identical, therefore, when lid 23 is embedded in slot 22a in such a way that the front end 23a of lid 23 is contacted with the end face 22e of slot 22a
When, the flat part 23h and adsorption plane 22 on the surface of lid 23 become same plane.The side 22f of the side 23b and slot 22a of lid 23
Constitute sliding surface.In addition, two corners of the slot 22a for the side that the front end 23a of lid 23 is contacted are provided with cannelure 364, it is described vertical
The width direction of slot 364 from side 22f towards the slot 22a of slot 22a are prominent, and exist from adsorption plane 22 towards the inner surface of microscope carrier 20
Up and down direction extends and aspirates to cutting sheet 12.
Due to constituting in the above-described manner, so being formed with the suction opening 40 of U-shaped in adsorption plane 22, the suction is opened
Mouth 40 is surrounded by the side 22f, end face 22e and guiding face 22g of slot 22a.Suction opening 40 is connected to the inside of framework 21.Separately
Outside, as shown in Fig. 2, being arranged that there are three the adsorption tanks of substantially U-shaped in a manner of by three layers surrounding the suction opening 40 of U-shaped
26.Two or three adsorption holes 27 are offered on each side of adsorption tank 26.It is connected to as adsorption hole 27 is as shown in Figure 1 with piping 93
Adsorptive pressure switching mechanism 90.
As shown in Fig. 3, Fig. 4 A, Fig. 4 B, the end face 22e of 20 inner circumferential side of microscope carrier of slot 22a is pressed in the front end 23a of lid 23
Situation when, suction opening 40 is closed, when lid 23 from the inner circumferential side of microscope carrier 20 towards peripheral side along the side 22f of slot 22a and
When guiding face 22g is slided and left the front end 23a of lid 23 from the end face 22e of slot 22a, suction opening 40 is opened.Therefore, end face
22e is the end face for the suction opening 40 that the front end 23a of lid 23 when closing suction opening 40 is abutted.
As shown in Fig. 4 A, Fig. 4 B, when closing the situation of lid 23, the front end 23a of lid 23 is contacted with end face 22e, therefore
In the state that lid 23 is closed, in two corners of lid 23, slot 22a, there is the cannelure 364 of the about barrel surface of 180 degree fan type to be connected to and inhale
The inside in attached face 22 and framework 21.
As shown in Fig. 5 B, Fig. 5 C, the front end side 23a of lid 23 is tabular, and loads semiconductor die across cutting sheet 12
The thickness of the flat part 23h of grain 15 is approximately fixed, and the back side of the rear end side 23c of lid 23 is provided with curved surface 23d, the curved surface
23d keeps the angle band at the back side and the face of the rear end side 23c cambered, and face side is provided with inclined surface 23g, the inclined surface 23g
It is tilted with from flat part 23h towards rear end 23c from face side towards back side.Inclined surface 23g is set to not to be carried on it
The region of semiconductor grain 15 is set, the length of flat part 23h is longer than the length of semiconductor grain 15.The back side of lid 23 becomes flat
Face.In addition, the two sides 23b in lid 23 is provided with chamfering 23e.At the back side of the side of the front end 23a of lid 23, it is provided with forward end
The direction of 23a arms 23f outstanding.Each arm 23f is pacified in a manner of penetrating through each hole 41 for being set to microscope carrier 20 shown in Fig. 2
Dress.Arm 23f has the engaging slot of U-shaped, as shown in Figure 1, the engaging slot is made to be sticked in the pin 330 of sliding block 332 and rotate certainly
Such as it is installed on sliding block 332.
As shown in fig. 6, utilizing lid 23 to close suction in such a way that the front end 23a of lid 23 is contacted with the end face 22e of slot 22a
When the situation of opening 40, the surface of the flat part 23h of lid 23 and adsorption plane 22 become same plane.In addition, working as the front end of lid 23
When 23a is contacted with the end face 22e of slot 22a and closed suction opening 40, small V-shaped is formed between adsorption plane 22 and lid 23
Slot.In addition, the width difference of the width of slot 22a, the i.e. width of suction opening 40, the width of lid 23, semiconductor grain 15 is substantially
It is identical, and each side 22f of slot 22a is contacted in a sliding manner with each side 23b of lid 23.
On one side referring to Fig. 7 to Figure 23 A~Figure 23 E, the pickup dress of a semiconductor grain constituted as described above
500 movement is set to be illustrated.Herein, before the picking action to semiconductor grain 15 is illustrated, to half will be pasted with
The step of cutting sheet 12 of semiconductor die 15 is set to wafer holders 10 is illustrated.
As shown in fig. 7, chip 11 is overleaf pasted with the cutting sheet 12 of adherence, cutting sheet 12 is installed on metal ring
(ring)13.Chip 11 so as be installed on metal ring 13 across cutting sheet 12 in the state of be operated.And
And as shown in figure 8, chip 11 is cut off from surface side using cast-cutting saw etc. in cutting step and becomes fifty-fifty semiconductor die 15.
The compressed gap 14 formed when being formed with cutting between each semiconductor grain 15.The depth of compressed gap 14 is from semiconductor grain
Until 15 reach a part of cutting sheet 12, but cutting sheet 12 is not switched off, and each semiconductor grain 15 is protected by cutting sheet 12
It holds.
In this way, the semiconductor grain 15 for being equipped with cutting sheet 12 and ring 13 is installed on chip holding as shown in Fig. 9 A, Fig. 9 B
Device 10.Wafer holders 10 have: circular extension ring (expand ring) 16, have flange part；And pressure ring 17, by ring
13 are fixed on the flange of extension ring 16.The not shown pressure ring driving portion of pressure ring 17 and along towards extension ring 16 flange advance and retreat
Direction driving.The internal diameter of extension ring 16 is greater than the diameter of the chip configured with semiconductor grain 15, and extension ring 16 has regulation
Thickness, flange are located at the outside of extension ring 16, and the direction for autotomying that pitch cutting 12 is left is installed in a manner of protruding outward
End surface side.In addition, the periphery of 12 side of cutting sheet of extension ring 16 is constituted as curved surface, cutting sheet 12 is installed on extension ring to work as
Cutting sheet 12 can be successfully stretched when 16.As shown in Figure 9 B, the cutting sheet 12 for being pasted with semiconductor grain 15 is being set to extension
Become general plane state before ring 16.
As shown in Figure 1, cutting sheet 12, when being set to extension ring 16, the curved surface along extension ring top is stretched and has extension ring
The amount of the scale of 16 upper surface and flange surface, therefore pitch cutting 12 is autotomyed in the effect of cutting sheet 12 being fixed on extension ring 16
Center towards peripherad drawing force.In addition, cutting sheet 12 extends because of the drawing force, therefore it is attached in cutting sheet 12
Gap 14 between each semiconductor grain 15 expands.
Next, being illustrated to the picking action of semiconductor grain 15.Position shown in FIG. 1 is first carried out in control unit 150
Set alignment procedure 157.As shown in Figure 10 A, Figure 10 B, control unit 150 starts to carry out lid 23 and partly lead in the state that lid 23 is closed
The position alignment of body crystal grain 15.Lid 23 is located at the position for closing suction opening 40, therefore the front end 23a of lid 23 becomes and slot 22a
End face 22e contact position, the lower surface of the rear end side 23c of lid 23 is placed in the surface of slot 22a, is supported by slot 22a.
In addition, the flat part 23h on the surface of lid 23 and adsorption plane 22 become substantially same plane.Control unit 150 utilizes crystalline substance shown in FIG. 1
Piece retainer horizontal direction driving portion 110 and be moved to wafer holders 10 in the horizontal direction on the position of readiness of microscope carrier 20
Side.Then, control unit 150 makes crystalline substance after the specified position above the position of readiness that wafer holders 10 are moved to microscope carrier 20
The movement of the horizontal direction of piece retainer 10 temporarily ceases, and makes to carry using microscope carrier up and down direction driving portion 120 shown in FIG. 1
Until the flat part 23h that platform 20 rises to the adsorption plane 22 of microscope carrier 20 and the surface of lid 23 is close contact in the lower surface of cutting sheet 12.
After the flat part 23h on the surface of the adsorption plane 22 and lid 23 of microscope carrier 20 is close contact in the lower surface of cutting sheet 12, control unit 150
Stop the rising of microscope carrier 20.Then, control unit 150 is again using wafer holders horizontal direction driving portion 110 and with as follows
Mode is adjusted, that is, and it is directed at one end 15a of the semiconductor grain to be picked up 15 and the front end 23a of the lid 23 of closed state,
Be directed at the width position of lid 23 and the width position of semiconductor grain 15, and make the side of semiconductor grain 15 with
The side 23b of lid 23 is aligned.The width of lid 23 is the width roughly the same with the semiconductor grain 15 to be picked up, if therefore making
Wherein one side 23b is aligned with the side of semiconductor grain 15, then can carry out each of each side of semiconductor grain 15 and lid 23
The position alignment of side 23b.At this point, cutting sheet 12 is stretched power because of the extension ring 16 of wafer holders 10.
Figure 10 B is the plan view of the adsorption plane 22 of microscope carrier 20 Yu the surface of lid 23, and is the cutting sheet that will be loaded thereon
12 with semiconductor grain 15 with a chain-dotted line indicates and the figure of its clear positional relationship, it is in fig. 1 ob, roughly the same in order to distinguish
The semiconductor grain 15 and lid 23 of width, and lid 23 is illustrated as slightly larger than semiconductor grain 15.Figure 12 B, Figure 22 B are also same
Sample.As shown in Figure 10 B, when the position alignment of lid 23 and semiconductor grain 15, semiconductor grain 15 is located at the flat part of lid 23
On 23h.
After position alignment of the microscope carrier 20 to the entrance of the lower surface of cutting sheet 12, contiguity and semiconductor grain 15,
Control unit 150, which drops to collet 18 using collet driving portion 130 shown in FIG. 1, on semiconductor grain 15 and makes the table of collet 18
Face 18a lands on semiconductor grain 15.After collet 18 lands on semiconductor grain 15, control unit 150 utilizes suction machine
The driving portion 102 of structure 100 and to be connected to the suction hole 19 of collet 18 with vacuum plant 140 direction switch three-way valve 101.By
This, is sucked up to vacuum plant 140 as shown in the air of suction hole 19 arrow 301 as shown in figure 11, thus suction hole 19 at
For vacuum, the absorption of semiconductor grain 15 is fixed on surface 18a by collet 18.It is inhaled at this point, the height of the surface 18a of collet 18 becomes
The height in attached face 22 is plus elemental height obtained by the thickness of cutting sheet 12 and the thickness of semiconductor grain 15.In addition, terminating
In the state of execution position alignment procedure 157, the pressure of suction opening 40, adsorption tank 26 or adsorption plane 22 becomes atmospheric pressure (position
Set the end of alignment procedure 157).
Secondly, control unit 150 executes the first removing program 158 shown in FIG. 1.Firstly, control unit 150 is in Figure 23 A~figure
T at the time of shown in 23E0Output such as gives an order, i.e., makes the positive flat part 23h self-priming of lid 23 using slider-actuated mechanism 300
Attached face 22 enters specified altitude H1, and slide lid 23 slightly towards the peripheral side of microscope carrier 20 and slightly beat suction opening 40
It opens.As illustrated in fig. 12, when the motor 381 of the driving portion 25 of slider-actuated mechanism 300 is rotated according to the instruction of control unit 150
When, the cam 383 being installed on the axis of motor 381 rotates.Cam 383 is elliptical shape, and cam surface and is installed on the first company
The roller 326c of the front end axis 326b of bar 326 is contacted, and when the direction of from the arrow a to Figure 12 A rotates, the cam surface of cam 383 will
The side of roller 326c towards adsorption plane 22 pushes up.By the movement, axis 326b rises such as the arrow b of Figure 12 A, first connecting rod
326 is whole towards the rising of adsorption plane 22.When first connecting rod 326 rises overally, 22 side of adsorption plane is connected to using spring 373
Piston 370 is pushed by first connecting rod 326, and the piston 370 such as the arrow c of Figure 12 A is whole to be risen towards adsorption plane 22.
When piston 370 is whole to be risen towards adsorption plane 22, be installed on the guide rail 331 of 22 side of adsorption plane also with the direction together of piston 370
Adsorption plane 22 rises.When guide rail 331 rises, the sliding block 332 installed in a manner of along the upper surface slide of guide rail 331 also court
Rise to adsorption plane 22.Then, the front end 23a of the lid 23 of sliding block 332 is rotatably freely sticked in via arm 23f, with sliding block
332 rising enters upward from adsorption plane 22 together.
As shown in the arrow 201 of Figure 13, if the front end 23a of lid 23 enters upward from adsorption plane 22, before lid 23
End 23a above pushes away one end 15a of cutting sheet 12 and semiconductor grain 15.In this way, which front end 23a autotomys pitch cutting 12 by downward
Power, therefore lid 23 is rotated clockwise centered on pin 330.The lower surface of the rear end side 23c of lid 23 is supported in slot
The bottom surface of 22a, the flat part 23h on the surface for above pushing away cutting sheet 12 of lid 23, from the front end side 23a of lid 23 towards the rear end side 23c
It tilts down.Control unit 150 makes collet 18 be matched with lid 23 as arrow 302 as shown in fig. 13 that using collet driving portion 130
From 22 upward direction of adsorption plane entrance and rise, but cutting sheet 12 copy the flat part 23h on the surface of lid 23 inclination and
Inclination, therefore the semiconductor grain 15 for being attached at cutting sheet 12 is tilted also relative to adsorption plane 22.Therefore, semiconductor grain 15
One end side 15a maintains the state for being adsorbed in collet 18 and rises, but the side other end 15b of semiconductor grain 15 is attached at cutting sheet
12, it is left from the surface 18a of collet 18.In this condition, semiconductor grain 15 at one end the side 15a and the side other end 15b it
Between generate small bending deformation.In addition, the side other end 15b due to semiconductor grain 15 is left from the surface 18a of collet 18,
So air as arrow 303 is flowed into from the gap between the other end 15b and surface 18a of semiconductor grain 15 as shown in fig. 13 that
To suction hole 19.
As illustrated in fig. 12, when the cam 383 of slider-actuated mechanism 300 according to the instruction of control unit 150 and then rotates, from
And first connecting rod 326 is towards adsorption plane 22 when above being pushed away, piston 370 and first connecting rod 326 that can not be mobile towards adsorption plane 22
Between spring 373, start to be compressed to the direction retreated relative to adsorption plane 22 by motor 381 and cam 383.Work as bullet
When spring 373 is compressed, piston 370 does not enter relative to adsorption plane 22, and only first connecting rod 326 enters relative to adsorption plane 22.Cause
This, the pin 328 of piston 370 does not rise relative to adsorption plane 22, and only enter to the engaging slot 326a of first connecting rod 326 second connects
The pin 327 of bar 329 rises to the direction of adsorption plane 22.In this way, which second connecting rod 329 starts to rotate centered on pin 328.It is logical
Cross the spinning movement, the engaging slot 329a of the other end of second connecting rod 329 is mobile towards the peripheral side of microscope carrier 20, be fixed with into
Enter to the sliding block 332 of the pin 330a of engaging slot 329a, with the pin 330 that is rotatably freely sticked in via arm 23f sliding block 332
Lid 23 starts to slide towards the peripheral side of microscope carrier 20.
As shown in figure 14, when the peripheral side of lid 23 towards microscope carrier 20 starts sliding, it is set to the rear end 23c at 23 back side of lid
Curved surface 23d, contacted with the inclined surface 22c of the bottom surface of Connection protrusion 22b and slot 22a.Moreover, when lid 23 further slides,
As shown in the arrow 203 of Figure 14, the curved surface 23d of lid 23 rises along inclined surface 22c.As a result, after the flat part 23h of lid 23
The surface of the end side 23c is initially entered from adsorption plane 22.Moreover, the curved surface 23d of lid 23 crosses inclination when lid 23 further slides
The back side of face 22c, lid 23 are contacted with the surface of protrusion 22b.Since protrusion 22b is from the projecting height of the bottom surface slot 22a and 23 table of lid
Entry altitude H of the face from adsorption plane 221It is roughly equal, so if the back side of lid 23 is contacted with the surface of protrusion 22b, lid 23
The flat part 23h on surface becomes substantially parallel with adsorption plane 22.Since the lower surface of lid 23 is supported in protrusion 22b shown in Figure 14
Surface, so bottom surface of the lower surface of lid 23 far from slot 22a.Hereafter, lid 23 is become and suction with the flat part 23h on 23 surface of lid
The substantially parallel state sliding in attached face 22.
When the flat part 23h on 23 surface of lid become it is substantially parallel with adsorption plane 22 when, the surface of flat part 23h also become with
The surface 18a of collet 18 is substantially parallel, therefore from the semiconductor die of the part that collet 18 leaves when the flat part 23h inclination of lid 23
The side other end 15b of grain 15 is adsorbed in the surface 18a of collet 18 again.As shown in figure 14, become and adsorption plane 22 when with lid 23
Substantially parallel mode keeps the flat part 23h for being placed with semiconductor grain 15 whole from 22 entry altitude H of adsorption plane1When, it is covering
23 front end 23a's and end face 22e is spaced apart width D1Gap.The gap is minute opening 42, width D1For minute opening
42 opening width D1.In addition, as shown in figure 14, the height of the surface 18a of collet 18 becomes the entrance of the flat part 23h of lid 23
Height H1In addition height Hc obtained by the thickness of cutting sheet 12 and the thickness of semiconductor grain 15.
Secondly, t at the time of Figure 23 C of control unit 1501Output makes adsorptive pressure close to the third pressure P of vacuum3's
Instruction.According to described instruction, the driving portion 92 of adsorptive pressure switching mechanism 90 shown in FIG. 1 is to making adsorption hole 27 and vacuum plant
The direction of 140 connections switches three-way valve 91.In this way, which the air of adsorption tank 26 passes through absorption as shown in the arrow 202 of Figure 14
Hole 27 and be drawn to vacuum plant 140, as shown in fig. 23d, in moment t2Adsorptive pressure becomes the third pressure close to vacuum
Power P3.Moreover, as shown in figure 14, the back side 12b of the cutting sheet 12 of the periphery of suction opening 40 is by vacuum suction in adsorption plane 22.
The flat part 23h of lid 23 is whole from 22 entry altitude H of adsorption plane1, therefore work as cutting sheet 12 by vacuum suction in adsorption plane 22
When, drawing force F obliquely is applied with to cutting sheet 12 as shown in figure 141.The drawing force F1Can be analyzed to by cutting sheet 12 to
The drawing force F that transverse direction stretches2And the drawing force F for stretching cutting sheet 12 in downward direction3.The drawing force F of transverse direction2Make partly to lead
Shear stress τ is generated between body crystal grain 15 and the positive 12a of cutting sheet 12.By the shear stress τ in semiconductor grain
Offset is generated near 15 one end 15a between region and the positive 12a of cutting sheet 12.The offset becomes cutting sheet 12 and half
The opportunity that region is removed near one end 15a of semiconductor die 15.As shown in fig. 23 c, control unit 150 is when in moment t2Make to adsorb
Pressure is the third pressure P close to vacuum3Later, adsorptive pressure is kept close to the third pressure P of vacuum3。
As shown in fig. 23d, control unit 150 is from moment t2T at the time of after the stipulated time3Output such as gives an order, that is,
By the pressure of suction opening 40 from the second pressure P close to atmospheric pressure2It is switched to the first pressure P close to vacuum1.According to
Described instruction, the driving portion 82 of cracking pressure switching mechanism 80 is to the inside and vacuum plant for making suction opening 40 or framework 21
The direction of 140 connections switches three-way valve 81.In this way, as shown in the arrow 204 of Figure 15, the sky of suction opening 40 and minute opening 42
Gas is sucked up to vacuum plant 140, as shown in fig. 23d, in moment t4, the pressure of suction opening 40 becomes the close to vacuum
One pressure P1.As a result, as shown in the arrow of Figure 15 205, the cutting sheet 12 positioned at the surface of minute opening 42 is by downward layback
It stretches.In addition, also exportable such as give an order, i.e., as shown in the dotted line of Figure 23 D, the driving portion 82 of cracking pressure switching mechanism 80 is made to exist
Moment t3With t6Between during by the pressure of suction opening in the second pressure P close to atmospheric pressure2With close to the of vacuum
One pressure P1Between repeatedly switch.The positive 12a and semiconductor grain 15 that cutting sheet 12 can more reliably be made as a result, are removed.Separately
Outside, the region near one end 15a of the semiconductor grain 15 of the surface of minute opening 42, stretched by cutting sheet 12 and such as
Bending deformation downwards as shown in arrow 206.Table of the region from collet 18 near one end 15a of semiconductor grain 15 as a result,
Face 18a leaves.Because when in moment t2Adsorptive pressure becomes the third pressure P close to vacuum3When, the one of semiconductor grain 15
The offset generated between region and the positive 12a of cutting sheet 12 near the 15a of end, and make in one end of semiconductor grain 15
Region forms the opportunity for autotomying the positive 12a removing of pitch cutting 12 near 15a, therefore one end 15a's of semiconductor grain 15 is attached
The bending deformation as shown in the arrow 206 of Figure 15 of near field one side, the positive 12a for autotomying pitch cutting 12 on one side start to remove.
As shown in figure 15, when region is left from the surface 18a of collet 18 near one end 15a of semiconductor grain 15,
As shown in the arrow 207 of Figure 15, air is flowed into the suction hole 19 as the collet 18 of vacuum.The air mass flow flowed into
(air leakage rate) is detected by flow sensor 106.As shown in fig. 23d, with from moment t3To moment t4And suction opening
40 pressure is certainly close to the second pressure P of atmospheric pressure2It is reduced to the first pressure P close to vacuum1, semiconductor grain 15
Region and cutting sheet 12 are stretched and bending deformation in downward direction together near the 15a of one end, therefore as shown in Figure 23 E, are flowed into
To collet 18 suction hole 19 air leakage rate from moment t3To moment t4It gradually increases.
As shown in fig. 23d, control unit 150 is in the third pressure P that adsorptive pressure is kept close to vacuum3State
Under, from moment t4To moment t5During the pressure of the suction opening 40 of microscope carrier 20 or minute opening 42 is kept close to
The first pressure P of vacuum1.During this period, as shown in the arrow of Figure 16 208, region near one end 15a of semiconductor grain 15
The surface 18a of collet 18 is back to due to the vacuum of the suction hole 19 of collet 18 and the elasticity of semiconductor grain 15.With half
The surface 18a of collet 18 is shifted in region near one end 15a of semiconductor die 15, and t at the time of such as Figure 23 E4To moment t5Institute
Show, the air leakage rate for flowing into the suction hole 19 of collet 18 is reduced, in moment t5, when 15 quilt of semiconductor grain as shown in figure 16
For vacuum suction when the surface 18a of collet 18, air leakage rate becomes zero.At this point, near one end 15a of semiconductor grain 15
The positive 12a of region from the cutting sheet 12 for the surface for being located at minute opening 42 removes (initial removing).In semiconductor grain 15
One end 15a near region when autotomying the positive 12a of pitch cutting 12 and initially removing, as shown in Figure 15, Figure 16, be located at minute opening
The cutting sheet 12 of 42 surface shifts in downward direction.Control unit 150 detects cutting sheet using sheet material displacement detection sensor 107
12 displacement (displacement of the detaching direction that connects relative to adsorption plane 22) in downward direction, and be more than regulation in the displacement detected
When the situation of threshold value, it is judged as near one end 15a of semiconductor grain 15 that region is located at cutting right above minute opening 42 certainly
The positive 12a of pitch cutting 12 is initially removed.In addition, being judged as and partly leading in the displacement detected situation below for defined threshold
Region is not shelled initially from the positive 12a for the cutting sheet 12 being located at right above minute opening 42 near one end 15a of body crystal grain 15
From (the first removing judgment step).It initially removes in the region near one end 15a for being judged as semiconductor grain 15 of control unit 150
Situation when, into next strip step.In addition, the area near one end 15a for being judged as semiconductor grain 15 of control unit 150
When the situation that domain is not removed initially, executes first and retry step.
Retried in step first, control unit 150 to cracking pressure switching mechanism 80, adsorptive pressure switching mechanism 90 it is each
Three-way valve 81, three-way valve 91 switch in such a way that atmosphere is connected to suction opening 40 or minute opening 42, adsorption tank 26, and
The pressure and adsorptive pressure for making suction opening 40 are as the second pressure P close to atmospheric pressure2, the 4th pressure P4Afterwards, split again
Mouth pressure switching mechanism 80, each three-way valve 81 of adsorptive pressure switching mechanism 90, three-way valve 91 are opened with vacuum plant 140 with suction
The mode that mouth 40 or minute opening 42, adsorption tank 26 are connected to switches over, and the pressure of suction opening 40 and adsorptive pressure are divided
Not from the second pressure P close to atmospheric pressure2, the 4th pressure P4 be switched to the first pressure P close to vacuum1, third pressure
P3, and judge whether the displacement detected by sheet material displacement detection sensor 107 is more than defined threshold.Moreover, detecting
When displacement is more than the situation of regulation displacement, terminates first and retry step and enter next strip step (the first removing program knot
Beam).
Secondly, control unit 150 executes the second removing program 159 shown in FIG. 1.Control unit 150 such as Figure 23 C, Figure 23 D institute
Show, in the third pressure P that adsorptive pressure is kept close to vacuum3In the state of, the pressure of suction opening 40 is remained
Close to the first pressure P of vacuum1After stipulated time, in moment t5Output such as gives an order, that is, by the pressure of suction opening 40
From the first pressure P close to vacuum1It is switched to the second pressure P close to atmospheric pressure2.According to described instruction, cracking pressure is cut
The driving portion 82 of structure 80 of changing planes switches over three-way valve 81 in such a way that the piping 85 of atmosphere opening is connected to suction opening 40.
As a result, as arrow 210 as shown in figure 17, air flows into suction opening 40, therefore as shown in fig. 23d, from moment t5Xiang Shi
Carve t6, the pressure of suction opening 40 is certainly close to the first pressure P of vacuum1Rise to the second pressure P close to atmospheric pressure2.When
The pressure of suction opening 40 rises to the second pressure P close to atmospheric pressure2When, what is stretched in downward direction in a vacuum is located at
Cutting sheet 12 right above minute opening 42, upward direction returns as shown in the arrow 209 of Figure 17.
Control unit 150 is as shown in fig. 23d in moment t6The pressure of suction opening 40 becomes close to the second of atmospheric pressure
Pressure P2Export and such as give an order later, i.e., as shown in fig. 23b, slide lid 23 and by the opening width of suction opening 40 from small
The opening width D of opening 421It is extended to opening width D2.According to described instruction, the motor of slider-actuated mechanism 300 shown in FIG. 1
381 rotate to the direction of arrow a shown in FIG. 1, pass through the vertical motion of first connecting rod 326 and Fig. 1 shown in arrow b in Fig. 1
The spinning movement of second connecting rod 329 shown in middle arrow d, and sliding block 332 is slided along 22 right direction of adsorption plane, lid 23 is as schemed
Become as shown in 17 arrow 211 with the flat part 23h on 23 surface of lid and is slided with the substantially parallel state of adsorption plane 22.Moreover,
Become D in opening width2Afterwards, control unit 150 stops motor 381 to stop the sliding of lid 23.As shown in figure 17, pass through institute
Movement is stated, suction opening 40 is opened, and becomes opening width D between the front end 23a and end face 22e of lid 232Opening opening portion 43.
Control unit 150 as shown in fig. 23d, in moment t7Output such as gives an order, that is, the pressure of suction opening 40 is certainly close
In the second pressure P of atmospheric pressure2It is switched to the first pressure P close to vacuum1.According to described instruction, cracking pressure switching mechanism
80 driving portion 82 switches over three-way valve 81 in such a way that suction opening 40 is connected to vacuum plant 140.As a result, such as Figure 18
Arrow 212 shown in, suction opening 40 or opening opening portion 43 in air be sucked up to vacuum plant 140, in moment t8, such as
Shown in Figure 23 D, the pressure in suction opening 40 or the opening portion 43 that is open becomes the first pressure P close to vacuum1.Work as suction opening
40 or the pressure in the opening portion 43 that is open be reduced to the first pressure P close to vacuum from close to the second pressure of atmospheric pressure1When,
Cutting sheet 12 right above opening opening portion 43 is drawn into opening opening portion 43 as shown in the arrow 213 of Figure 18.
As a result, as shown in the arrow of Figure 18 214, region bending deformation in downward direction near one end 15a of semiconductor grain 15 and
It is left from the surface 18a of collet 18, as shown in the arrow 215 of Figure 18, air is flowed into the suction hole 19 of collet 18.It flows into
The air leakage rate of suction hole 19 is detected using flow sensor 106 shown in FIG. 1.As shown in Figure 23 E, air leakage rate
Suction opening 40 or the opening portion 43 that is open pressure reduction from moment t7To moment t8During increase.
Control unit 150 is becoming moment t8When output such as give an order, i.e., as shown in fig. 23d, make the pressure of suction opening 40
From the first pressure P close to vacuum1Rise to the second pressure P close to atmospheric pressure2.According to described instruction, cracking pressure is cut
The driving portion 82 of structure 80 of changing planes cuts three-way valve 81 in a manner of being connected to suction opening 40 with the piping 85 of atmosphere opening
It changes.As a result, as shown in arrow 216 in Figure 19, air flows into suction opening 40 or opening opening portion 43 takes out as shown in fig. 23d
The pressure for inhaling the pressure of opening 40 or the opening portion 43 that is open rises to the second pressure P close to atmospheric pressure2.As a result, such as Figure 19
Arrow 217 shown in, be open opening portion 43 surface 12 upward direction of cutting sheet displacement.In addition, being located at opening opening portion
Region is shifted to the upper direction of cutting sheet 12 near one end 15a of the semiconductor grain 15 in the region right above 43, and such as
It is returned as arrow 218 shown in Figure 19 to the surface 18a of collet 18.When semiconductor grain 15 is close to the surface 18a of collet 18
When, if Figure 23 E is from moment t8To moment t9During as, the air leakage rate for flowing into the suction hole 19 of collet 18 starts to drop
It is low, t at the time of Figure 23 E9Air leakage rate becomes zero.At this point, region is by vacuum near one end 15a of semiconductor grain 15
It is adsorbed in the surface 18a of collet 18, region near one end 15a of the semiconductor grain 15 right above opening opening portion 43
Autotomy the positive 12a removing of pitch cutting 12 (the second strip step of first time terminates).
In moment t9, control unit 150 executes secondary second strip step.It exports and such as gives an order as shown in fig. 23b, i.e.,
Slide lid 23 and by the opening width of suction opening 40 from opening width D2It is extended to opening width D3.According to described instruction, figure
Slider-actuated mechanism 300 shown in 1 is driven, lid 23 as shown in the arrow 219 of Figure 20 with the flat part 23h on 23 surface of lid with
The substantially parallel state sliding of adsorption plane 22.Control unit 150 becomes D in opening width3When make motor 381 stop, to stop
The sliding of lid 23.As shown in figure 20, pass through the movement, suction opening 40 and then opening, the front end 23a and end face 22e of lid 23
Between become opening width D3Opening opening portion 44.
In addition, control unit 150 is as shown in fig. 23d, in moment t10Output such as gives an order, that is, by the pressure of suction opening 40
From the second pressure P close to atmospheric pressure2It is switched to the first pressure P close to vacuum1.According to described instruction, cracking pressure is cut
The driving portion 82 of structure 80 of changing planes switches over three-way valve 81 in a manner of being connected to suction opening 40 with vacuum plant 140.By
This, as shown in the dotted arrow 220 of Figure 20, the air in suction opening 40 or the opening portion 44 that is open is sucked up to vacuum plant 140,
The pressure of suction opening 40 or the pressure in the opening portion 44 that is open are in moment t11As the first pressure P close to vacuum1.Such one
Come, as dotted arrow 221 as shown in figure 20, cutting sheet 12 is drawn into opening opening portion 44.At this point, semiconductor grain 15
The half of all areas or so autotomy the removing of pitch cutting 12, therefore become prone to autotomy the removing of pitch cutting 12.Therefore, even if cutting sheet
12 move in downward direction, also do not shift in downward direction together with cutting sheet 12 and are to maintain vacuum suction in the state of collet 18,
And a part for being located at the semiconductor grain 15 right above opening opening portion 44 autotomys the positive 12a removing of pitch cutting 12.Therefore, empty
Gas may not flow into the suction hole 19 of collet 18, in Figure 23 E from moment t10To t11During, air leakage rate becomes zero.
Control unit 150 is becoming moment t11When, it exports such as give an order as shown in fig. 23d, that is, make the pressure of suction opening 40
From the first pressure P close to vacuum1Rise to the second pressure P close to atmospheric pressure2.According to described instruction, cracking pressure is cut
The driving portion 82 of structure 80 of changing planes cuts three-way valve 81 in a manner of being connected to suction opening 40 with the piping 85 of atmosphere opening
It changes.As a result, as shown in arrow 222 in Figure 20, air flows into suction opening 40 or opening opening portion 44 takes out as shown in fig. 23d
The pressure for inhaling the pressure of opening 40 or the opening portion 44 that is open rises to the second pressure P close to atmospheric pressure2.As a result, such as Figure 20
Arrow 223 shown in, 12 upward direction of the cutting sheet displacement right above opening opening portion 44.Then, when in moment t12Suction is opened
The pressure of mouth 40 or the pressure in the opening portion 44 that is open become the second pressure P close to atmospheric pressure2When, terminate secondary second
Strip step.
Hereinafter, similarly, t at the time of control unit 150 is shown in Figure 23 B12The second strip step of third time is executed, is such as schemed
Lid 23 is set to slide and make 40 opening width D of suction opening as 21 arrow 2244(between the front end 23a and end face 22e of lid 23
Width) opening opening portion 45 after, t at the time of shown in Figure 23 D13, by the opening portion 45 that is open such as the arrow 225 of Figure 21
Pressure from close to atmospheric pressure second pressure P2It is switched to the first pressure P close to vacuum1, such as the arrow 226 of Figure 21
The a part for being located at the semiconductor grain 15 right above opening opening portion 45 is set to autotomy the positive 12a removing of pitch cutting 12, in Figure 23 D
T at the time of shown14By the pressure in the opening portion 45 that is open certainly close to the first pressure P of vacuum1It is switched to close to atmospheric pressure
Second pressure P2, when in moment t15, the pressure of suction opening 40 or the pressure in opening opening portion 45 become close to atmospheric pressure
Second pressure P2When, terminate the second strip step of third time.Similarly, control unit 150 shown in Figure 23 A~Figure 23 E from
Moment t15To moment t18During carry out the 4th the second strip step, open lid 23 to opening width D5Until, and make
A part of semiconductor grain 15 right above the opening opening portion autotomys the positive 12a removing of pitch cutting 12.
Make lid 23 slide and become opening width D5Afterwards, the major part of semiconductor grain 15 autotomys the removing of pitch cutting 12, because
This control unit 150 as shown in fig. 23b as in moment t18Slide lid 23 and by opening width from D5It is extended to D7, such as Figure 22 A institute
Increase and picking up semi-conductor crystal grain 15 collet 18.After picking up semi-conductor crystal grain 15, control unit 150 is in moment t20Make to cover
23 are back to initial position, and the pressure of suction opening 40, adsorptive pressure is made to restore to terminate picking action to atmospheric pressure.
The pick device 500 of the semiconductor grain of the implementation described above plays following effect, that is, picks up half
When semiconductor die 15, whenever by the pressure of suction opening 40 from close to vacuum first pressure P1It is switched to close to atmospheric pressure
Second pressure P2When, repeat to make lid 23 to slide and periodically open the second strip step of suction opening 40, and make
Cutting sheet 12 is periodically removed from semiconductor grain 15, thus when can inhibit pickup semiconductor grain damage.
Control unit 150 executes following second removing judgment step, that is, judges position in the second strip step illustrated before this
Whether the region of the semiconductor grain 15 right above opening opening portion 43 autotomys the positive 12a removing of pitch cutting 12, and when the
It is judged as that pitch cutting 12 is not autotomyed in the region for the semiconductor grain 15 being located at right above opening opening portion 43 in two removing judgment steps
Positive 12a removing situation when, implement second to retry step.Hereinafter, retrying step to the second removing judgment step and second
It is illustrated.In addition, only indicating that second retries step in following explanation in Figure 25 A~Figure 25 E of the expression picking action of reference
Movement from moment t8To moment t11During it is different from Figure 23 A~Figure 23 E, from moment t0To moment t8During movement
It is identical as Figure 23 A~Figure 23 E, from moment t11To moment t23Movement and Figure 23 A~Figure 23 E from moment t8To t20Movement
It is identical.
Firstly, as illustrated by referring to Fig.1 8, as shown in Figure 23 E, when in moment t7The pressure of suction opening 40 is certainly close
In the second pressure P of atmospheric pressure2To the first pressure P close to vacuum1When starting to reduce, 15 bending deformation of semiconductor grain
And left from the surface 18a of collet 18, air flows into suction hole 19, therefore the detection of flow sensor 106 as shown in Figure 1
Air leakage rate increases.Moreover, as shown in fig. 23d, when in moment t8Make the pressure of suction opening 40 from close to the of vacuum
One pressure P1It begins to ramp up to the second pressure P close to atmospheric pressure2When, the sky of the detection of flow sensor 106 as shown in Figure 1
Gas leakage amount starts to reduce, as shown in figure 19, when in moment t9When semiconductor grain 15 is adsorbed on the surface 18a of collet 18,
Air leakage rate becomes zero, and the semiconductor grain 15 in the region right above opening opening portion 43 autotomys the front of pitch cutting 12
12a removing.On the other hand, in the situation that the positive 12a that semiconductor grain 15 does not autotomy pitch cutting 12 is successfully removed, such as scheme
Shown in 23A~Figure 23 E, even if making the pressure of suction opening 40 from the first pressure P close to vacuum1It rises to close to atmosphere
The second pressure P of pressure2, semiconductor grain 15 also remain be attached at the state of cutting sheet 12 without by vacuum suction in collet
18 surface, even if therefore air leakage rate become moment t9When be also not zero.
In this way, when semiconductor grain 15 autotomys the situation that pitch cutting 12 is successfully removed, as shown in fig. 24 a, air leakage
Amount is reduced to zero from after liter above freezing, when semiconductor grain 15 does not autotomy the situation that pitch cutting 12 is successfully removed, such as Figure 24 C institute
Show, air leakage rate remains certain flow without being reduced to zero from after liter above freezing.Since the air leakage rate is simulation
(analog) it measures, so in order to accurately carry out removing detection, and in the second removing judgment step, by Figure 24 A, Figure 24 C institute
The signal differentiation of the air leakage rate shown and calculate the air leakage rate differential value as shown in Figure 24 B, Figure 24 D.
As shown in fig. 24b, when semiconductor grain 15 is successfully removed, air leakage rate drops to zero from after liter above freezing,
Therefore the differential value of air leakage rate becomes negative (minus) value after temporarily becoming positive (plus) value.On the other hand, such as Figure 24 D
Shown, when semiconductor grain 15 is not removed successfully, air leakage rate remains value at this time, therefore air from after liter above freezing
The differential value of leakage rate becomes near zero after temporarily becoming positive value.Therefore, when by the threshold value model of the differential value of air leakage rate
It encloses when being set as between+S and-S as shown in Figure 24 B, Figure 24 D, as shown in fig. 24b, is successfully removed in semiconductor grain 15
When, the differential value of air leakage rate is more than threshold range (positive direction is primary, and negative direction is primary and adds up to twice) twice.Another party
Face, in the situation that semiconductor grain 15 is not removed successfully, as shown in Figure 24 D, the differential value of air leakage rate is only in positive side
It is primary more than threshold value.Therefore, in the second removing judgment step, when Figure 23 E is from moment t7To moment t9During air let out
When the differential value of leakage quantity is more than that the number of defined threshold range becomes 2 (even number), it is judged as that semiconductor grain 15 has been removed, enters
Next strip step is sentenced when the number that the differential value of air leakage rate is more than defined threshold range becomes the situation of 1 (odd number)
Break as semiconductor grain 15 is unstripped and enters described below second and retries step.
Retried in step second, control unit 150 as shown in Figure 25 B as do not make lid 23 slide, as shown in Figure 25 D when
Carve t10Make the pressure of suction opening 40 from the second pressure P close to atmospheric pressure2It is reduced to the first pressure P close to vacuum1。
Then, as shown in Figure 25 D, in moment t11Make the pressure of suction opening 40 from the first pressure P close to vacuum1It rises to close
In the second pressure P of atmospheric pressure2(second retries step).When retrying step in Figure 25 E from moment t by second11To when
Carve t12During air leakage rate when being reduced to zero, the differential value of air leakage rate at this time is more than that defined threshold range is primary
(more than the threshold range of negative side).As a result, from moment t shown in Figure 25 E7To moment t12During air leakage rate differential
Value is more than that the number of defined threshold range becomes 2 (even numbers), therefore control unit 150 is judged as right above opening opening portion 43
The semiconductor grain 15 in region autotomyed the positive 12a removing of pitch cutting 12, so that terminating second retries step, and next the
Number is set as 0 (in advance by counter O reset) in advance before two strip steps.
In addition, the differential value when the air leakage rate in Figure 24 B becomes negative region, the differential value of air leakage rate reaches
To-s1When (t at the time of Figure 24 A, Figure 24 B1), as shown in fig. 24 a, actual collet air leakage rate deviate maximum leakage amount and
Start to reduce.Therefore, t at the time of Figure 24 A, Figure 24 B1Afterwards, semiconductor grain 15 can be predicted towards upright (semiconductor grain 15
Towards the surface 18a of collet 18), therefore threshold value .S1Alternatively referred to as removing turns to convergent transfer point.It therefore, can also be in air
The differential value of leakage rate reaches threshold value-S1Time point be transferred to next stripping process (process), when so as to shorten removing
Between and reduce damage (damage) to semiconductor grain 15.
In addition, control unit 150 is when carrying out the situation of multiple second strip step, it can also stored count (count) air
The differential value of leakage rate is more than the number of defined threshold range, and next the is entered when the number of the counting becomes the situation of even number
Two strip steps, and enter second when the number of counting becomes the situation of odd number and retry step.For example, when the second of first time
When completing the situation of the removing of the prescribed portion of semiconductor grain 15 in strip step, the counting of differential value becomes 2 (even numbers), because
This enters secondary second strip step.When the regulation for not completing semiconductor grain 15 in secondary second strip step
Partial removing, and the differential value of air leakage rate be more than defined threshold range number be primary situation when, stored count
Number become 3 (odd numbers), therefore do not enter the second strip step of third time, and enter second and retry step.When in the second weight
It is more than regulation by the differential value of air leakage rate when completing the situation of the removing of the prescribed portion of semiconductor grain 15 during try is rapid
The counting how many times of threshold range are primary, therefore the number of stored count becomes 4 (even numbers), therefore enter the second removing step of third time
Suddenly.In this way, by becoming even number or odd number with the number of stored count to determine whether into next second strip step, and only
Number using counting is the removing that can determine whether not completing semiconductor grain in second strip step of which time.
As described above, the pick device 500 of the semiconductor grain of present embodiment is whether to confirm semiconductor grain 15
It autotomys after pitch cutting 12 is removed and enters next strip step, therefore can inhibit damages semiconductor grain 15 in peeling action.
The present invention is not limited to embodiments described above, comprising not departing from the present invention as defined in claims
Technical scope or essence have altered and correct.
Claims (16)
1. a kind of pick device of semiconductor grain, comprising:
Microscope carrier, includes adsorption plane, the back side of adsorption plane absorption cutting sheet, and the cutting sheet is pasted with to be picked up in front
Semiconductor grain；
Suction opening is set to the adsorption plane of the microscope carrier；
Lid slides along the adsorption plane and is opened and closed the suction opening；And
Cracking pressure switching mechanism, by the pressure of the suction opening close to vacuum first pressure with close to atmospheric pressure
Second pressure between switch,
When picking up the semiconductor grain, the pressure of the suction opening is switched to first pressure from the second pressure
After power, when the pressure of the suction opening is switched to the second pressure from the first pressure, make it is described lid only to
Opening direction slides predetermined distance.
2. the pick device of semiconductor grain according to claim 1, wherein
When picking up the semiconductor grain, the adsorptive pressure of the adsorption plane is being remained into vacuum, is making the lid only to beating
Evolution to sliding predetermined distance.
3. the pick device of semiconductor grain according to claim 1 or 2, wherein
The lid is set to the microscope carrier in such a way that the surface of the lid enters freely from the adsorption plane, and
When picking up the semiconductor grain, the suction opening is opened sliding the lid, and make the lid
After the surface enters to the specified altitude higher than the adsorption plane, make the adsorptive pressure vacuum of the adsorption plane, and is passing through
The pressure of the suction opening is switched to the first pressure from the second pressure after spending the stipulated time, and makes to be located at and open
The cutting sheet of top of absorption opening removed from the semiconductor grain.
4. the pick device of semiconductor grain according to claim 1 or 2, wherein
The cracking pressure switching mechanism is before initially making the lid only slide predetermined distance to opening direction, described first
Repeatedly switch the pressure of the suction opening between pressure and the second pressure.
5. the pick device of semiconductor grain according to claim 1 or 2, wherein
The lid is set to the microscope carrier in such a way that the surface of the lid enters freely from the adsorption plane, and
When picking up the semiconductor grain, so that the surface of the lid enters to the specified altitude higher than the adsorption plane
State slide the lid.
6. the pick device of semiconductor grain according to claim 1 or 2, comprising:
Detection unit is removed, makes the lid sliding and the semiconductor grain right above the suction opening of opening to being located at
A part whether from the cutting sheet it is described front removing detected,
Detecting what described a part of the semiconductor grain was not removed from the cutting sheet by the removing detection unit
It when situation, slides the lid, and the pressure of the suction opening is being switched to second pressure from the first pressure
After power, the pressure of the suction opening is switched to the first pressure from the second pressure again.
7. the pick device of semiconductor grain according to claim 6, comprising:
Collet adsorbs the semiconductor grain；
Aspirating mechanism is connected to the collet, and aspirates air from the jaw face；And
Flow sensor detects the suction air flow amount of the aspirating mechanism,
The removing detection unit is obtained by the suction air flow amount signal differentiation that the flow sensor will be utilized to detect
Differential signal is more than to be judged as to have removed when the number of defined threshold range becomes the situation of even number, and become surprise in the number
It is judged as unstripped when several situations.
8. the pick device of semiconductor grain according to claim 1 or 2, comprising:
Sheet material displacement detection sensor, the suction that the front end of the lid is abutted when being set to the closing suction opening are opened
Near the end face of mouth, and when sliding the lid and to open the suction opening, to the absorption opening for being located at opening
The cutting sheet of top detected relative to the displacement of the detaching direction that connects of the adsorption plane,
When after the adsorptive pressure vacuum for making the adsorption plane after the stipulated time by the pressure of the suction opening from institute
It is rule in the sheet material displacement detected by the sheet material displacement detection sensor when stating second pressure and being switched to the first pressure
When determining threshold value situation below, make the adsorptive pressure atmosphere opening of the adsorption plane and by the pressure of the suction opening from
After the first pressure is switched to the second pressure, when after the adsorptive pressure vacuum for making the adsorption plane again by rule
After fixing time, the pressure of the suction opening is switched to the first pressure from the second pressure, is opened to make to be located at
The cutting sheet of top of absorption opening removed from the semiconductor grain.
9. the pick device of semiconductor grain according to claim 8, wherein
The sheet material displacement detection sensor is the region for the use of the light transmission rate relative to the cutting sheet being 0% to 30%
The light of wavelength is as light source.
10. the pick device of semiconductor grain according to claim 9, wherein
The sheet material displacement detection sensor is to use the light emitting diode of the short wavelength using 0nm to 300nm as the anti-of light source
Emitting optical fiber.
11. a kind of pick-up method of semiconductor grain, comprising:
The step of preparing the pick device of semiconductor grain, the pick device of the semiconductor grain includes: microscope carrier, includes absorption
Face, the back side of the adsorption plane absorption cutting sheet, the cutting sheet are pasted with the semiconductor grain to be picked up in front；Suction is opened
Mouthful, it is set to the adsorption plane of the microscope carrier；Lid is arranged in such a way that the surface of the lid enters freely from the adsorption plane
In the microscope carrier, and is slided along the adsorption plane and be opened and closed the suction opening；And cracking pressure switching mechanism, by the pumping
The pressure for inhaling opening switches between the first pressure close to vacuum and the second pressure close to atmospheric pressure；
Position alignment step, width consistent with the one end for the semiconductor grain to be picked up with the lid front end of closed state, and covering
The consistent mode of the width position of direction position and semiconductor grain, makes the microscope carrier in the direction along the adsorption plane
It is mobile；
First strip step makes the lid slide and open the suction opening, and enters the surface of the lid
To after being higher than the specified altitude of the adsorption plane, make the adsorptive pressure vacuum of the adsorption plane, and after the stipulated time
The pressure of the suction opening is switched to the first pressure from the second pressure, and makes to open positioned at the absorption opened
The cutting sheet of the top of mouth is removed from the semiconductor grain；And
The adsorptive pressure of the adsorption plane is remained vacuum by the second strip step, and by the pressure of the suction opening from institute
It states after second pressure is switched to the first pressure, whenever the pressure of the suction opening is switched to institute from the first pressure
When stating second pressure, make the lid only to beating higher than the state of the specified altitude of the adsorption plane so that the cap surface is entered to
Evolution will be located at the semiconductor right above the suction opening opened by the sliding to sliding predetermined distance
The front removing of a part of crystal grain from the cutting sheet.
12. the pick-up method of semiconductor grain according to claim 11, wherein
The cracking pressure switching mechanism is before initially making the lid only slide predetermined distance to opening direction, described first
Repeatedly switch the suction opening pressure between pressure and the second pressure.
13. the pick-up method of semiconductor grain according to claim 11, wherein
The pick device of the semiconductor grain includes sheet material displacement detection sensor, the sheet material displacement detection sensor setting
Near the end face for the suction opening that the front end of the lid is abutted when closing the suction opening, and working as slides the lid
When moving and opening the suction opening, to the cutting sheet positioned at the top for the absorption opening opened relative to described
The displacement of the detaching direction that connects of adsorption plane is detected, and
First strip step includes:
First removing judgment step, when after making the adsorptive pressure vacuum after the stipulated time by the suction opening
When pressure is switched to the first pressure from the second pressure, moved in the sheet material detected by the sheet material displacement detection sensor
When position is more than the situation of defined threshold, it is judged as the cutting sheet positioned at the top for the absorption opening opened from described half
Semiconductor die removing, and be defined threshold situation below in the sheet material displacement detected by the sheet material displacement detection sensor
When, it is judged as that the cutting sheet positioned at the top for the absorption opening opened is not removed from the semiconductor grain；And
First retries step, is judged as by the first removing judgment step positioned at the upper of the absorption opening opened
When the cutting sheet of side is not from the situation that the semiconductor grain is removed, make the adsorptive pressure atmosphere opening and by institute
It states after the pressure of suction opening is switched to the second pressure from the first pressure, when making the adsorptive pressure true again
After sky after the stipulated time, the pressure of the suction opening is switched to the first pressure from the second pressure, thus
Remove the cutting sheet of the top positioned at the absorption opening opened from the semiconductor grain.
14. the pick-up method of semiconductor grain according to claim 11, wherein
The pick device of the semiconductor grain includes: collet, adsorbs the semiconductor grain；Aspirating mechanism is connected to described
Collet, and air is aspirated from the jaw face；And flow sensor, the suction air flow amount of the aspirating mechanism is examined
It surveys,
Second strip step includes:
Second removing judgment step, it is micro- obtained by the suction air flow amount signal differentiation that will utilize the flow sensor detection
When sub-signal is more than that the number of defined threshold range becomes the situation of even number, it is judged as the institute for being located at and making the lid sliding and opening
A part of the semiconductor grain right above suction opening is stated from the front removing of the cutting sheet, and at described time
When number becomes the situation of odd number, being judged as to be located at makes the lid sliding and described partly leading right above the suction opening opened
A part of body crystal grain is not from the front removing of the cutting sheet；And
Second retries step, is being judged as described a part of the semiconductor grain not by the second removing judgment step
When from the situation of the front removing of the cutting sheet, slide the lid, and by the pressure of the suction opening oneself
After the first pressure is switched to the second pressure, the pressure of the suction opening is switched to from the second pressure again
The first pressure, to make the front removing of the described a part of the semiconductor grain from the cutting sheet.
15. the pick-up method of semiconductor grain according to claim 13, wherein
The sheet material displacement detection sensor is the region for the use of the light transmission rate relative to the cutting sheet being 0% to 30%
The light of wavelength is as light source.
16. the pick-up method of semiconductor grain according to claim 15, wherein
The sheet material displacement detection sensor is to use the light emitting diode of the short wavelength using 0nm to 300nm as the anti-of light source
Emitting optical fiber.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-033351 | 2014-02-24 | ||
| JP2014033351 | 2014-02-24 | ||
| JP2014225729A JP6349496B2 (en) | 2014-02-24 | 2014-11-06 | Semiconductor die pickup apparatus and pickup method |
| JP2014-225729 | 2014-11-06 | ||
| PCT/JP2014/082965 WO2015125385A1 (en) | 2014-02-24 | 2014-12-12 | Semiconductor die pickup apparatus and semiconductor die pickup method |
Publications (2)
| Publication Number | Publication Date |
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| CN105900225A CN105900225A (en) | 2016-08-24 |
| CN105900225B true CN105900225B (en) | 2019-01-22 |
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| CN201480072889.2A Active CN105900225B (en) | 2014-02-24 | 2014-12-12 | The pick device and pick-up method of semiconductor grain |
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| Country | Link |
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| JP (1) | JP6349496B2 (en) |
| KR (1) | KR102043120B1 (en) |
| CN (1) | CN105900225B (en) |
| SG (1) | SG11201607050YA (en) |
| TW (1) | TWI560764B (en) |
| WO (1) | WO2015125385A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6707396B2 (en) * | 2016-05-11 | 2020-06-10 | 株式会社ディスコ | Cutting equipment |
| JP6621771B2 (en) * | 2017-01-25 | 2019-12-18 | ファスフォードテクノロジ株式会社 | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
| CN106768991B (en) * | 2017-03-10 | 2020-04-07 | 东莞市凯格精机股份有限公司 | Method for finely detecting working state of suction nozzle |
| JP6891281B2 (en) * | 2017-07-04 | 2021-06-18 | 株式会社Ｆｕｊｉ | Component mounting device |
| KR102037967B1 (en) * | 2018-05-30 | 2019-10-29 | 세메스 주식회사 | Die bonding method |
| TWI745710B (en) * | 2018-07-06 | 2021-11-11 | 日商新川股份有限公司 | Pickup system for semiconductor die |
| TWI716925B (en) * | 2018-07-06 | 2021-01-21 | 日商新川股份有限公司 | Pickup system for semiconductor die |
| JP6627001B1 (en) * | 2019-01-21 | 2019-12-25 | 株式会社東京精密 | Wafer peeling cleaning equipment |
| JP7237655B2 (en) * | 2019-03-01 | 2023-03-13 | ファスフォードテクノロジ株式会社 | Semiconductor manufacturing equipment and semiconductor device manufacturing method |
| JP7135959B2 (en) * | 2019-03-22 | 2022-09-13 | 株式会社デンソー | pickup device |
| JP7274902B2 (en) * | 2019-03-25 | 2023-05-17 | ファスフォードテクノロジ株式会社 | Semiconductor manufacturing equipment and semiconductor device manufacturing method |
| KR102202080B1 (en) * | 2019-07-02 | 2021-01-12 | 세메스 주식회사 | Collet exchange method, die transfer method and die bonding method |
| JP7377654B2 (en) * | 2019-09-17 | 2023-11-10 | ファスフォードテクノロジ株式会社 | Die bonding equipment, peeling unit, collet and semiconductor device manufacturing method |
| CN115226411A (en) * | 2021-02-17 | 2022-10-21 | 株式会社新川 | Pick-up device and pick-up method for semiconductor die |
| KR102570798B1 (en) * | 2021-11-10 | 2023-08-30 | 세메스 주식회사 | Apparatus for picking up semiconductor devices and method of controlling operations of the same |
| CN115312430B (en) * | 2022-08-23 | 2024-09-03 | 深圳市易达凯电子有限公司 | Packaging equipment special for insulated gate bipolar transistor chip production |
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| CN102308377A (en) * | 2009-03-05 | 2012-01-04 | 株式会社新川 | Apparatus and method for picking up semiconductor die |
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| Publication number | Publication date |
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| TW201533794A (en) | 2015-09-01 |
| SG11201607050YA (en) | 2016-10-28 |
| JP6349496B2 (en) | 2018-07-04 |
| KR20150145255A (en) | 2015-12-29 |
| WO2015125385A1 (en) | 2015-08-27 |
| JP2015173250A (en) | 2015-10-01 |
| CN105900225A (en) | 2016-08-24 |
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| KR102043120B1 (en) | 2019-11-12 |
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