CN105788997A - Photocathode - Google Patents
Photocathode Download PDFInfo
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- CN105788997A CN105788997A CN201610216950.7A CN201610216950A CN105788997A CN 105788997 A CN105788997 A CN 105788997A CN 201610216950 A CN201610216950 A CN 201610216950A CN 105788997 A CN105788997 A CN 105788997A
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- photocathode
- injection layer
- metal vapors
- photoelectron injection
- photoelectron
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- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 45
- 229910018289 SbBi Inorganic materials 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000002347 injection Methods 0.000 claims description 101
- 239000007924 injection Substances 0.000 claims description 101
- 229910052751 metal Inorganic materials 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 48
- 229910052792 caesium Inorganic materials 0.000 claims description 33
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 32
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 31
- 239000000956 alloy Substances 0.000 claims description 31
- 229910045601 alloy Inorganic materials 0.000 claims description 31
- 229910052701 rubidium Inorganic materials 0.000 claims description 15
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 15
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 13
- 230000000149 penetrating effect Effects 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 55
- 230000035945 sensitivity Effects 0.000 description 34
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 24
- 238000005259 measurement Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 6
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000005297 pyrex Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001764 infiltration Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/26—Image pick-up tubes having an input of visible light and electric output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
- H01J40/02—Details
- H01J40/04—Electrodes
- H01J40/06—Photo-emissive cathodes
Landscapes
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Abstract
The present invention aims at providing a photocathode which can improve various characteristics. In a photocathode 10, an intermediate layer 14, an underlayer 16, and a photoelectron emission layer 18 are formed in this order on a substrate 12. The photoelectron emission layer 18 contains Sb and Bi and functions to emit a photoelectron in response to light incident thereon. The photoelectron emission layer 18 contains 32 mol% or less of Bi relative to SbBi. This can dramatically improve the linearity at low temperatures.
Description
The application is the applying dateOn November 7th, 2008, application number be201410085728.9, denomination of invention bePhotoelectricity is cloudy PoleThe divisional application of patent application.
Technical field
The present invention relates to and penetrate photoelectronic photocathode according to the incidence of light.
Background technology
The photocathode constituted in the following way is had: the inner surface at container is deposited with Sb as conventional photocathode is known, this evaporation layer is deposited with Bi, face starts to be deposited with Sb from it again, thus forming Sb layer and Bi layer, and make the steam of Cs react, thus constituting photocathode (for example, referring to patent documentation 1).
Patent documentation 1: Japanese Laid-Open Patent Publication 52-105766 publication
Summary of the invention
Photocathode is comparatively ideal relative to the highly sensitive of incident illumination.In order to make the sensitivity of photocathode improve, it is necessary to improve the quantum efficiency of actual effect, the quantum efficiency of this actual effect represents and penetrates to the ratio relative to the quantity of the photon being incident to photocathode of the photoelectronic quantity outside photocathode.It addition, when detecting faint light, specially require sensitivity and require to reduce dark current.On the other hand, in the field requiring measurement that dynamic range is wide as semiconductor checking device, the linearity is also required that.In patent documentation 1, disclose the use of the photocathode of Sb and Bi.But, for photocathode, it is desirable to improve quantum efficiency further, simultaneously, it is also desirable to the raising of the various characteristics such as the raising of minimizing dark current or the linearity.Additionally, when specially requiring the extremely low temperature measurement of high linearity, in the past, between incident panel and photocathode, formation metallic film and mesh electrode improved the electric conductivity of photocathode, but transmitance can be caused to reduce or photoelectric surface area reduces, make the quantum efficiency of actual effect decline.
It is an object of the invention to provide a kind of photocathode that various characteristic can be made to improve.
Photocathode involved in the present invention possesses photoelectron injection layer, and this photoelectron injection layer contains Sb and Bi, and it penetrates photoelectron according to the incidence of light to outside, and containing relative to Sb and Bi in photoelectron injection layer is the Bi of below 32mol%.
This photocathode can make linearity during low temperature improve tremendously.
It addition, in photocathode involved in the present invention, it is preferred to containing relative to Sb and Bi in photoelectron injection layer is the Bi of below 29mol%.Thereby, it is possible to guarantee the sensitivity equal with multialkali photocathode (Multi-alkaliPhoto-cathode), it can be ensured that require quantum efficiency required in the field of the measurement that dynamic range is wide as semiconductor checking device.
It addition, in photocathode involved in the present invention, it is preferred to containing relative to Sb and Bi in photoelectron injection layer is the Bi of below 16.7mol%.Thus, compared with the existing goods being provided with Sb layer on manganese oxide based bottom, it is possible to obtain higher sensitivity, especially, it is possible to increase the sensitivity under wavelength 500～600nm, i.e. green sensitivities～red sensitivity.
It addition, in photocathode involved in the present invention, it is preferred to containing relative to Sb and Bi in photoelectron injection layer is the Bi of below 6.9mol%.Thereby, it is possible to obtain the high sensitivity of quantum efficiency more than 35%.
It addition, in photocathode involved in the present invention, it is preferred to containing relative to Sb and Bi in photoelectron injection layer is the Bi of more than 0.4mol%.Thereby, it is possible to reduce dark current effectively.
It addition, in photocathode involved in the present invention, it is preferred to containing relative to Sb and Bi in photoelectron injection layer is the Bi of more than 8.8mol%.Thereby, it is possible to the linearity that the higher limit that stably obtains the linearity with multialkali photocathode is equal.
It addition, in photocathode involved in the present invention, it is preferred to the linearity at-100 DEG C is higher than 0.1 of the linearity at 25 DEG C times.Additionally, it is preferred that demonstrate the quantum efficiency of more than 20% for the peak value place in wavelength 320～440nm, it is preferred to the peak value place in wavelength 300～430nm demonstrates the quantum efficiency of more than 35%.
It addition, in photocathode involved in the present invention, it is preferred to the light incident side at the light of photoelectron injection layer is also equipped with by HfO2The intermediate layer formed.
It addition, in photocathode involved in the present invention, it is preferred to the light incident side at the light of photoelectron injection layer is also equipped with the basal layer formed by MgO.
It addition, in photocathode involved in the present invention, photoelectron penetrates layer preferably by making potassium metal vapors and caesium metal vapors (rubidium metal vapors) reaction be formed on the alloy firm of SbBi.
In accordance with the invention it is possible to improve various characteristic.
Accompanying drawing explanation
Fig. 1 represents the figure of the cross section structure of photomultiplier tube applicable as infiltration type for the photocathode involved by present embodiment.
Fig. 2 is the sectional view representing a part of enlarged representation by the structure of the photocathode involved by present embodiment.
Fig. 3 is for the concept map by making can reduce in Sb the thought of dark current containing Bi is described.
Fig. 4 is the chart of the spectral sensitivity characteristic representing embodiment and comparative example.
Fig. 5 is the chart of the spectral sensitivity characteristic representing embodiment and comparative example.
Fig. 6 is the chart of the spectral sensitivity characteristic representing embodiment and comparative example.
Fig. 7 is the chart of the spectral sensitivity characteristic representing embodiment and comparative example.
Fig. 8 is the figure of the count number representing each intensity of photoelectron penetrating layer injection in dark state from photoelectron.
Fig. 9 is the chart of the value representing the dark counting (darkcount) describing embodiment and comparative example.
Figure 10 is the chart of the value representing the dark counting describing embodiment and comparative example.
Figure 11 is the chart of the linearity representing embodiment.
Figure 12 is the chart of the linearity representing embodiment.
Figure 13 is be the chart that cathode current when-5% is described about each containing ratio by the rate of change shown in Figure 11 and Figure 12.
Figure 14 is rate of change is the chart described with each temperature about each containing ratio of cathode current when-5%.
Symbol description
10 ... photocathode, 12 ... substrate, 14 ... intermediate layer, 16 ... basal layer, 18 ... photoelectron injection layer.
Detailed description of the invention
Hereinafter, it is described in detail about the photocathode involved by present embodiment with reference to accompanying drawing.
Fig. 1 is the figure of the cross section structure representing the photomultiplier tube applied by the photocathode (photoelectric surface) involved by present embodiment as infiltration type.Photomultiplier tube 30 possesses: the entrance window 34 passed through by incident illumination and the container 32 being sealed to form by an opening entrance window 34 of the side pipe of tubular.It is provided with penetrating photoelectronic photocathode 10 in container 32, by the photoelectron guiding focusing electrode 36 in multiplication portion 40 of injection, the multiplication portion 40 of multiplied electron and the anode 38 collecting electronics through multiplication.Additionally, photomultiplier tube 30 work using the substrate 12 of photocathode 10 as entrance window 34 in the way of and be configured.
The multiplication portion 40 arranged between focusing electrode 36 and anode 38, is made up of multiple dynodes 42.Focusing electrode 36, dynode 42, photocathode 10 and anode 38 electrically connect with stem lead (stempin) 44, and this stem lead 44 is set to the base plate 57 of the end of the through container 32 being arranged on photocathode 10 opposition side.
Fig. 2 is the sectional view of the part amplification of the structure representing the photocathode involved by present embodiment.In this photocathode 10, as in figure 2 it is shown, substrate 12 sequentially forms intermediate layer 14, basal layer 16 and photoelectron injection layer 18.Photocathode 10 as from substrate 12 side incident illumination h ν, from photoelectron penetrate layer 18 penetrate photoelectron e-Infiltration type and be schematically illustrated.
Substrate 12 is by being formed by hafnium oxide (HfO thereon2) substrate in intermediate layer 14 that constitutes constitutes.Substrate 12 is preferably the substrate of the light through wavelength 177nm～1000nm.As such substrate, there is the substrate being made up of high purity synthetic vitreous silica or pyrex (such as Kovar glass (kovarglass)), PYREX glass (registered trade mark).This substrate 12 is preferably the thickness with 1～5mm, thus can keep best transmitance and mechanical strength.
Intermediate layer 14 is preferably by HfO2Formed.HfO2Light for wavelength 300nm～1000nm demonstrates high permeability.It addition, HfO2When being formed on Sb, the island structure of Sb is made to attenuate.This intermediate layer 14 by being deposited with HfO on the substrate 12 of the entrance window 34 of the container 32 being equivalent to glass-vacuum tube having carried out clean process2And formed.Evaporation such as can adopt the EB vapour deposition method using EB (electronbeam: electron beam) evaporation coating device to complete.Especially, by making intermediate layer 14 and basal layer 16 become HfO2The combination of-MgO and obtain penetrating the effect of the cushion of layer 18 and substrate 12 as photoelectron, and can obtain preventing the effect of the reflection of light.
Basal layer 16 is preferably manganese oxide, MgO or TiO2Deng the basal layer of light through wavelength 117nm～1000nm.Especially, by being formed basal layer 16 by MgO, the high sensitivity of quantum efficiency more than 20% or more than 35% can be obtained.By arranging MgO basal layer, obtain penetrating as photoelectron the effect of the cushion of layer 18 and substrate 12, and can obtain preventing the effect of the reflection of light.This basal layer 16 is by being formed the oxide of regulation evaporation.
Photoelectron injection layer 18 by making potassium metal vapors and the reaction of caesium metal vapors on the alloy firm of SbBi, or makes rubidium metal vapors and the reaction of caesium metal vapors be formed.This photoelectron injection layer 18 is formed as the porous layer being made up of Sb-Bi-K-Cs or Sb-Bi-Rb-Cs.Photoelectron injection layer 18 works as the photoelectron injection layer of photocathode 10.The alloy firm of SbBi is deposited on basal layer 16 by sputtering vapour deposition method or EB vapour deposition method etc..The thickness of photoelectron injection layer 18 isScope.
Herein, the inventor of the present invention studies through concentrated, found that: by making the Bi containing more than ormal weight in the Sb of photoelectron injection layer 18, make the carrier caused by lattice defect become many, so that the conductivity of photocathode becomes greatly.Thus, it has been found that by the linearity of photocathode 10 can be made to improve containing Bi.It addition, highly sensitive photocathode can cause that dark current becomes big problem, but find Sb to reduce dark current containing Bi by enabling.
Fig. 3 is that (a) is the concept map of the photocathode without Bi, and (b) is the concept map of the photocathode containing Bi for the concept map by making can reduce in Sb the thought of dark current containing Bi is described.As shown in Fig. 3 (a), without in the photocathode of Bi, the thermionic energy (under room temperature 0.038eV) impurity energy level place near conduction band excites, and penetrates thus producing dark current owing to becoming thermoelectron.As shown in Fig. 3 (b), photocathode 10 involved by present embodiment can produce surface potential barrier (under the containing ratio 2.1mol% of Bi Ea value=0.06eV) by making to contain Bi in Sb, so can by being stopped that thermoelectron suppresses the generation of dark current by surface potential barrier.On the other hand, when the containing ratio of Bi is more, the Ea value of surface potential barrier becomes further big and causes that quantum efficiency declines, and inventors herein have recognized that the containing ratio that can substantially ensure that the Bi corresponding to sensitivity necessary to suitable application area.
When photocathode 10 is used for the foreign body detecting device of quasiconductor, on little foreign body, during irradiating laser, scattering light is very faint, and during irradiating laser, scattering light becomes big on big foreign body.Therefore, photocathode 10 is required there is the sensitivity detecting faint scattering light as far as possible, and, being required to have can the wider dynamic range of any one in corresponding faint scattering light and bigger scattering light.So, in the field requiring measurement that dynamic range is wide as semiconductor checking device, in order to ensure necessary sensitivity and the linearity in this field, in photoelectron injection layer 18, Bi is relative to the ratio of integral molar quantity relative to Sb and Bi of the mole of the containing ratio of SbBi, i.e. Bi, it is preferably more than 8.8mol%, below 32mol%, more preferably more than 8.8mol%, below 29mol%.It addition, the linearity of the photocathode 10 during in order to ensure low temperature, it is preferred to more than 16.7mol%, below 32mol%.
When photocathode 10 being applied to the special requirement sensitivity of such as high-energy physics experiment etc. and is necessary the field doing one's utmost to reduce dark current, in order to be substantially reduced dark current and guarantee the sensitivity of necessity, in photoelectron injection layer 18, the Bi containing ratio relative to SbBi is preferably below 16.7mol%, more preferably more than 0.4mol%, below 16.7mol%.It addition, more preferably more than 0.4mol%, below 6.9mol%, because extra high sensitivity can be obtained.
The action of photocathode 10 and photomultiplier tube 30 is illustrated.As depicted in figs. 1 and 2, in photomultiplier tube 30, the incident illumination h ν through entrance window 34 is incident to photocathode 10.Light h ν is incident from substrate 12 side, arrives photoelectron injection layer 18 through substrate 12, intermediate layer 14 and basal layer 16.Photoelectron injection layer 18 works as being used for penetrating photoelectronic active layer, and photon is absorbed and produces photoelectron e herein-.The photoelectron e produced in photoelectron injection layer 18-The injection of layer 18 surface is penetrated from photoelectron.The photoelectron e of injection-Double through multiplication portion 40, anode 38 collect.
Then, the sample about the sample of the photocathode involved by embodiment with the photocathode involved by its comparative example illustrates.The sample of the photocathode involved by embodiment have formed on pyrex 12 by hafnium oxide (HfO2) basal layer 16 being made up of MgO of the intermediate layer 14 that constitutes and its upper formation.The basal layer 16 of this sample is formed the SbBi alloy film of the Bi of the containing ratio including regulation, the alloy film of SbBi is exposed in potassium metal vapors and caesium metal vapors until confirming that photocathode sensitivity becomes maximum, thus forming photoelectron injection layer 18.The SbBi layer of photoelectron injection layer 18 is(penetrate layer according to photoelectron to be scaled)。
Sample about the photocathode involved by comparative example, adopt the sample (Comparative examples A 1 of the existing product of bialkali photocathode, Comparative examples A 2) and the sample (comparative example B) of multialkali photocathode, described bialkali photocathode is form the basal layer of manganese oxide on pyrex substrate and be formed on Sb film and make potassium metal vapors and the reaction of caesium metal vapors form the photocathode of photoelectron injection layer, described multialkali photocathode is through on glass substrate at UV, Sb film makes sodium metal vapors, potassium metal vapors and caesium metal vapors react and form photoelectron and penetrate the photocathode of layer.It addition, as the sample of the photocathode involved by comparative example, except photoelectron outgoing plane is entirely free of Bi, use with the sample of the photocathode involved by embodiment sample (the comparative example C1 of mutually isostructural photocathode, comparative example C2, Comparative Example D, Comparative Example E).
Fig. 4～Fig. 7 illustrates, the sample of the photocathode that Bi containing ratio is 0.4～32mol% involved by embodiment, Bi containing ratio be 0mol% and in addition the sample (comparative example C2) of photocathode involved by comparative example mutually isostructural with embodiment, manganese oxide is as the spectral sensitivity characteristic of the sample (Comparative examples A 1) of the existing product of the bialkali photocathode of basal layer and the sample (comparative example B) of multialkali photocathode.nullFig. 4 is 0mol% for representing about Bi containing ratio、0.4mol%、0.9mol%、The chart of each the quantum efficiency relative to wavelength of the sample of the photocathode of 1.8mol%，Fig. 5 is 2.0mol% for representing about Bi containing ratio、2.1mol%、6.9mol%、The chart of each the quantum efficiency relative to wavelength of the sample of the photocathode of 8.8mol%，Fig. 6 is for representing that Bi containing ratio is 10.5mol%、11.4mol%、11.7mol%、The chart of each the quantum efficiency relative to wavelength of the sample of the photocathode of 12mol%，Fig. 7 is for representing that Bi containing ratio is 13mol%、16.7mol%、29mol%、The chart of each the quantum efficiency relative to wavelength of the sample of the photocathode of 32mol%.The transverse axis of chart shown in Fig. 4～Fig. 7 represents that wavelength (nm), the longitudinal axis represent quantum efficiency (%).Fig. 4～Fig. 7 all show the manganese oxide spectral sensitivity characteristic as the sample (Comparative examples A 1) of the existing product of the bialkali photocathode of basal layer and the sample (comparative example B) of multialkali photocathode.
From Fig. 4 and Fig. 5 be appreciated that the sample (ZK4300) of Bi containing ratio 0.4mol%, the sample (ZK4295) of Bi containing ratio 0.9mol%, the sample (ZK4304) of Bi containing ratio 1.8mol%, the sample (ZK4293) of Bi containing ratio 2.0mol%, the sample (ZK4175) of Bi containing ratio 2.1mol%, Bi containing ratio 6.9mol% the sample (ZK4152) peak value in wavelength 300～430nm demonstrate more than 35% quantum efficiency.It is, therefore, to be understood that be below 6.9mol% by making contained Bi Sb and Bi penetrating layer 18 relative to photoelectron, it is possible to guarantee to become in the field of special requirement sensitivity sufficient sensitivity more than 35% quantum efficiency.Furthermore, it is possible to confirm in the sample (comparative example C2) of Bi containing ratio 0mol%, it is also possible to guarantee high sensitivity, but dark current can become big as be described hereinafter, can't fully obtain the linearity.
nullIt is appreciated that from Fig. 5～7，The sample (ZK4305) of Bi containing ratio 8.8mol%、The sample (ZK4174) of Bi containing ratio 10.5mol%、The sample (ZK4004) of Bi containing ratio 11.4mol%、The sample (ZK4302) of Bi containing ratio 11.7mol%、The sample (ZK4298) of Bi containing ratio 12mol%、The sample (ZK4291) of Bi containing ratio 13mol%、The sample (ZK4142) of Bi containing ratio 16.7mol%，Peak value place between wavelength 300～500nm demonstrates the quantum efficiency of more than 20%，And compared with the sample (Comparative examples A 1) of the existing product of the bialkali photocathode of basal layer, in whole wavelength, demonstrate higher quantum efficiency with manganese oxide.It is, therefore, to be understood that be below 16.7mol% by making the contained Bi SbBi penetrating layer relative to photoelectron, it can be ensured that the quantum efficiency higher than existing bialkali photocathode.Especially, when Bi containing ratio is less than 16.7%, under wavelength 500～600nm, demonstrate the quantum efficiency higher than the sample of existing product.It is, therefore, to be understood that by making to penetrate the SbBi of layer relative to photoelectron, containing the Bi of below 16.7mol%, compared with existing bialkali photocathode, it is possible to increase the sensitivity under 500～600nm, i.e. green sensitivities～red sensitivity.
It can be understood from figure 7 that the peak value place that the sample (ZK4192) of Bi containing ratio 29mol% is between wavelength 320～440nm demonstrates the quantum efficiency of more than 20%.It is, therefore, to be understood that by penetrating in layer at photoelectron, make relative to the SbBi Bi containing below 29mol%, it is possible to obtain becoming in the field that such incident light quantities such as semiconductor checking device are bigger abundant sensitivity more than 20% quantum efficiency.It addition, in wavelength 450～500nm, demonstrate bigger or equal quantum efficiency compared with the sample of multialkali photocathode (comparative example B).
Secondly, the experimental result that the cathode sensitivity of each Bi containing ratio of photocathode, anode sensitivity, dark current, negative electrode blueness sensivity index and dark counting (darkcounts) are compared is displayed in Table 1.In table 1, as the photocathode involved by embodiment, the measurement result of the sample of display Bi containing ratio 0.4～16.7mol%, as the photocathode involved by comparative example, the measurement result of the sample (comparative example C1, Comparative Example D, Comparative Example E) that manganese oxide becomes the photocathode of 0mol% as the sample (Comparative examples A 1) of the existing product of the bialkali photocathode of basal layer and Bi containing ratio is shown.The sample of Bi containing ratio 0.4～16.7mol% and Bi containing ratio become the sample (comparative example C1, Comparative Example D, Comparative Example E) of the photocathode of 0mol% be respectively provided with formed on the substrate 12 by hafnium oxide (HfO2) intermediate layer 14 constituted and the basal layer 16 being made up of MgO being formed thereon.
[table 1]
Negative electrode blueness sensivity index in table 1 is lumen sensitivity cathode current (A/lm-b) when being put into by the filter of 1/2 thickness of blue filter CS-5-5-8 (corning company system) when measuring before photomultiplier tube 30.
Dark counting in table 1 is, in the dark state cut off by the light being incident to photocathode 10, for the value relatively compared by the photoelectronic number penetrated from photoelectron injection layer 18, is the value being measured under the room temperature environment of 25 DEG C and obtaining.Specifically, this dark counting is based on the result of the Fig. 8 obtained by the determinator that photoelectron is counted and calculates.Fig. 8 is the measurement number representing the photoelectronic each intensity penetrating layer injection in dark state from photoelectron, and for representing about figure as the sample (Comparative examples A 1) of the existing product of basal layer of Bi containing ratio 0mol% (comparative example C1), the sample of the photocathode of 2.1mol%, 6.9mol%, 10.5mol%, 16.7mol% and manganese oxide.The transverse axis of Fig. 8 represents the passage (channel) of determinator, and transverse axis represents the photoelectronic measurement number detected in each passage.Dark counting in table 1 represents the integrated value of the measurement number in the passage of more than the 1/3 of the peak value of the photoelectronic measurement number shown in Fig. 8.(specifically, peak value is 200ch, so 1/3 is 200/3=67 passage) so, by compare peak value more than 1/3 passage in measurement number integrated value, it is possible to the impact of the instability etc. in the circuit of remover.
As can be understood from Table 1, about the manganese oxide sample (Comparative examples A 1) as the existing product of basal layer, although obtain relatively low value about dark current and dark counting, but sufficient negative electrode blueness sensivity index can not be obtained.The sample of the photocathode containing Bi involved by embodiment, obtains relatively low value about dark current and dark counting, and can obtain negative electrode blueness sensitivity higher compared with Comparative examples A 1.
The relation of the value of the dark counting shown in table 1 and Bi containing ratio is as shown in Figure 9.Fig. 9 describes the sample of photocathode of Bi containing ratio 0.4～16.7mol% and Bi containing ratio is 0mol% and intermediate layer is HfO2The chart of value of dark counting of sample (comparative example C1, Comparative Example D, Comparative Example E) of photocathode.The transverse axis of the chart shown in Fig. 9 represents Bi containing ratio (mol%), and the longitudinal axis represents the value of dark counting.
Being appreciated that compared with the sample of the photocathode of Bi containing ratio 0mol% (comparative example C1, Comparative Example D, Comparative Example E) from Fig. 9, Bi containing ratio is the sample of the photocathode of more than 0.4mol% is all that the value of dark counting has been reduced more than half.Additionally, the 13mol% place between Bi more than containing ratio 10.5mol% and below 16.7mol%, it also seen that the minimizing of dark counting.
In the region that in Fig. 9, Bi containing ratio is relatively low, the relation of the value of dark counting and Bi containing ratio is as shown in Figure 10.Figure 10 describes the sample of photocathode of Bi containing ratio 0.4～2.1mol% and Bi containing ratio is 0mol% and intermediate layer is HfO2The chart of value of dark counting of sample (comparative example C1, Comparative Example D, Comparative Example E) of photocathode.The transverse axis of the chart shown in Figure 10 represents Bi containing ratio (mol%), and the longitudinal axis represents the value of dark counting.
It is appreciated that the dark counting that Bi containing ratio is the sample of the photocathode of 0.4mol% significantly decreases compared with the sample of the photocathode of Bi containing ratio 0mol% (comparative example C1, Comparative Example D, Comparative Example E) from Figure 10.As long as it is, therefore, to be understood that trace ground is containing Bi, as long as namely Bi containing ratio is bigger than 0mol%, it becomes possible to obtain the effect making the value of dark counting reduce.It is appreciated that by making in Sb containing Bi in accordance with the above, with manganese oxide as compared with the sample of the existing product of basal layer, higher negative electrode blueness sensivity index (with reference to table 1) can being obtained and the value of dark counting can be reduced.
Figure 11 and Figure 12 represents the linearity of the sample of the photocathode of Bi containing ratio 2.0～32mol%.Figure 11 is the chart of the respective rate of change relative to cathode current of sample of the photocathode representing Bi containing ratio 2.0mol%, 2.1mol%, 6.9mol%, 8.8mol%, 10.5mol%, 11.7mol%, 12mol%, 13.3mol%, and Figure 12 is the chart of the respective rate of change relative to cathode current of sample of the photocathode representing Bi containing ratio 16.7mol%, 29mol%, 32mol%.The transverse axis of the chart shown in Figure 11 and Figure 12 represents cathode current (A), and the longitudinal axis represents rate of change (%).In addition, pass through in the test system of reflecting mirror at the light beam of the light source by having the colour temperature specified, benchmark light quantity obtained for the light quantity being divided into 1:4 by dim light filter is incident to the photocathode of sample, the reference light current value of regulation 1:4 is rate of change 0%, and the rate of change of the photoelectric current of the 1:4 when light quantity of 1:4 being increased is as rate of change.Figure 13 is the rate of change shown in Figure 11 and Figure 12, and to be cathode current when-5% map the chart obtained for each containing ratio.The transverse axis of Figure 13 represents Bi containing ratio (mol%), and the longitudinal axis represents the cathode current (A) during rate of change-5%.Furthermore it is known that the higher limit of the linearity of bialkali photocathode (Sb-K-Cs) involved by Comparative examples A 1, A2 is 0.01 μ A, in fig. 13 by 1.0 × 10-8The position of A is represented by dotted lines.Additionally, it is known that the higher limit of the linearity of multialkali photocathode (Sb-Na-K-Cs) involved by comparative example B is 10 μ A, in fig. 13 by 1.0 × 10-5The position of A represents in dash-dot line.
It is appreciated that the sample of Bi more than containing ratio 8.8mol% demonstrates the linearity higher limit (1.0 × 10 with multialkali photocathode from Figure 13-5A) the equal linearity.Additionally, Bi containing ratio is lower than in the photocathode of 8.8mol%, change the changing greatly relative to Bi containing ratio of the linearity, the linearity is greatly decreased along with the minimizing of Bi containing ratio, on the other hand, Bi containing ratio is in the photocathode of more than 8.8mol%, and the change of the linearity is less relative to the change of Bi containing ratio.Therefore, even make Bi containing ratio vary slightly due to foozle, the linearity is without sharply changing, it is possible to stably guarantee high linearity.Therefore, by making to penetrate the SbBi Bi that contains more than 8.8mol% of layer 18 relative to photoelectron, it is possible to stably obtain the linearity that the higher limit of the linearity with multialkali photocathode is almost equal.
Figure 14 is rate of change is that cathode current when-5% carries out, by each temperature, the chart obtained of mapping about each containing ratio, which show the sample (Comparative examples A 2) as the existing product of the bialkali photocathode of basal layer of the manganese oxide involved by the sample (ZK4142) of the photocathode of the sample (ZK4198) of photocathode about the Bi containing ratio 32mol% involved by embodiment, Bi containing ratio 16.7mol% and comparative example, carry out the measurement result when mensuration of the linearity at low ambient temperatures.The transverse axis of Figure 14 represents the temperature (DEG C) measuring environment, and the longitudinal axis represents the cathode current (A) during rate of change-5%.
It is appreciated that from Figure 14, manganese oxide reduces its linearity as the sample (Comparative examples A 2) of the existing product of the bialkali photocathode of basal layer along with temperature and is dramatically reduced, compared with linearity when linearity when-100 DEG C is with room temperature (25 DEG C), reduce by 1 × 10-4More than times.On the other hand, about the sample (ZK4142) of Bi containing ratio 16.7mol%, compared with linearity when linearity when-100 DEG C is with room temperature (25 DEG C), only reduce by 0.1 times.It addition, about the sample (ZK4198) of Bi containing ratio 32mol%, compared with linearity when linearity when-100 DEG C is with room temperature, almost without decline.It is, therefore, to be understood that by Bi containing ratio is set to below 32mol%, it is possible to make linearity during low temperature improve tremendously.The photocathode that such linearity made when low temperature improves is applicable to the observation etc. of the black dull material (darkmatter) in the universe that high-energy physics scholar carries out.In this observation, use Liquid Argon flasher (-189 DEG C), liquid xenon flasher (-112 DEG C).As shown in figure 14, in the Comparative examples A 2 of prior art, under the environment of-100 DEG C, cathode current only has 1.0 × 10-11(A), it is impossible to be measured.When using liquid xenon flasher, it is preferred to use ZK4142 (Bi=16.7mol%), when using Liquid Argon flasher, it is preferred to use ZK4198 (Bi=32mol%).
This concludes the description of preferred embodiment, but be not limited to above-mentioned embodiment, various deformation can be carried out.Such as, in photocathode 10, the material that substrate 12, basal layer 16 comprise is not limited to the material of above-mentioned record.Additionally, it is possible to be not provided with intermediate layer 14.The forming method of each layer of photocathode, is not limited to the method described in above-mentioned embodiment respectively.
It addition, except photomultiplier tube, the photocathode involved by present embodiment is also applied in the electron tube of image intensifier tube (II pipe) etc..By combining NaI flasher and photocathode, it is possible to identify faint X ray and strong X ray, it is possible to obtain the image that contrast is good.
Additionally, the embodiment of image intensifier tube (high-speed shutter pipe) uses this photocathode, the existing product of resistance ratio making photocathode are little, even if not using special conductive substrates (W metal etc.), it is also possible to reach shutter more at a high speed with high sensitivity.
Industry utilizes probability
The present invention provides a kind of photocathode that various characteristic can be made to improve.
Claims (56)
1. a photocathode, it is characterised in that
Possessing photoelectron injection layer, this photoelectron injection layer contains Sb and Bi and penetrates photoelectron to outside according to the incidence of light,
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of below 29mol%,
Peak value place in wavelength 320～440nm demonstrates the quantum efficiency of more than 20%.
2. photocathode as claimed in claim 1, it is characterised in that
Light incident side at the light of described photoelectron injection layer is also equipped with by HfO2The intermediate layer formed.
3. photocathode as claimed in claim 1 or 2, it is characterised in that
Light incident side at the light of described photoelectron injection layer is also equipped with the basal layer formed by MgO.
4. photocathode as claimed in claim 1 or 2, it is characterised in that
Described photoelectron injection layer is by making potassium metal vapors and caesium metal vapors react and be formed on the alloy firm of SbBi.
5. photocathode as claimed in claim 3, it is characterised in that
Described photoelectron injection layer is by making potassium metal vapors and caesium metal vapors react and be formed on the alloy firm of SbBi.
6. photocathode as claimed in claim 1 or 2, it is characterised in that
Described photoelectron injection layer is to be formed by making potassium metal vapors and rubidium metal vapors and caesium metal vapors react on the alloy firm of SbBi.
7. photocathode as claimed in claim 3, it is characterised in that
Described photoelectron injection layer is to be formed by making potassium metal vapors and rubidium metal vapors and caesium metal vapors react on the alloy firm of SbBi.
8. a photocathode, it is characterised in that
Possessing photoelectron injection layer, this photoelectron injection layer contains Sb and Bi and penetrates photoelectron to outside according to the incidence of light,
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of below 32mol%,
Light incident side at the light of described photoelectron injection layer is also equipped with by HfO2The intermediate layer formed.
9. photocathode as claimed in claim 8, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of below 29mol%.
10. photocathode as claimed in claim 8, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of below 16.7mol%.
11. the photocathode as described in any one in claim 8～10, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of more than 0.4mol%.
12. the photocathode as described in any one in claim 8～10, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of more than 8.8mol%.
13. the photocathode as described in any one in claim 8～10, it is characterised in that
Light incident side at the light of described photoelectron injection layer is also equipped with the basal layer formed by MgO.
14. photocathode as claimed in claim 11, it is characterised in that
Light incident side at the light of described photoelectron injection layer is also equipped with the basal layer formed by MgO.
15. photocathode as claimed in claim 12, it is characterised in that
Light incident side at the light of described photoelectron injection layer is also equipped with the basal layer formed by MgO.
16. the photocathode as described in any one in claim 8～10, it is characterised in that
Described photoelectron injection layer is by making potassium metal vapors and caesium metal vapors react and be formed on the alloy firm of SbBi.
17. photocathode as claimed in claim 11, it is characterised in that
Described photoelectron injection layer is by making potassium metal vapors and caesium metal vapors react and be formed on the alloy firm of SbBi.
18. photocathode as claimed in claim 12, it is characterised in that
Described photoelectron injection layer is by making potassium metal vapors and caesium metal vapors react and be formed on the alloy firm of SbBi.
19. photocathode as claimed in claim 13, it is characterised in that
Described photoelectron injection layer is by making potassium metal vapors and caesium metal vapors react and be formed on the alloy firm of SbBi.
20. photocathode as claimed in claim 14, it is characterised in that
Described photoelectron injection layer is by making potassium metal vapors and caesium metal vapors react and be formed on the alloy firm of SbBi.
21. photocathode as claimed in claim 15, it is characterised in that
Described photoelectron injection layer is by making potassium metal vapors and caesium metal vapors react and be formed on the alloy firm of SbBi.
22. the photocathode as described in any one in claim 8～10, it is characterised in that
Described photoelectron injection layer is to be formed by making potassium metal vapors and rubidium metal vapors and caesium metal vapors react on the alloy firm of SbBi.
23. photocathode as claimed in claim 11, it is characterised in that
Described photoelectron injection layer is to be formed by making potassium metal vapors and rubidium metal vapors and caesium metal vapors react on the alloy firm of SbBi.
24. photocathode as claimed in claim 12, it is characterised in that
Described photoelectron injection layer is to be formed by making potassium metal vapors and rubidium metal vapors and caesium metal vapors react on the alloy firm of SbBi.
25. photocathode as claimed in claim 13, it is characterised in that
Described photoelectron injection layer is to be formed by making potassium metal vapors and rubidium metal vapors and caesium metal vapors react on the alloy firm of SbBi.
26. photocathode as claimed in claim 14, it is characterised in that
Described photoelectron injection layer is to be formed by making potassium metal vapors and rubidium metal vapors and caesium metal vapors react on the alloy firm of SbBi.
27. photocathode as claimed in claim 15, it is characterised in that
Described photoelectron injection layer is to be formed by making potassium metal vapors and rubidium metal vapors and caesium metal vapors react on the alloy firm of SbBi.
28. a photocathode, it is characterised in that
Possessing photoelectron injection layer, this photoelectron injection layer contains Sb and Bi and penetrates photoelectron to outside according to the incidence of light,
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of below 32mol%,
Light incident side at the light of described photoelectron injection layer is also equipped with the basal layer formed by MgO.
29. photocathode as claimed in claim 28, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of below 29mol%.
30. photocathode as claimed in claim 28, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of below 16.7mol%.
31. the photocathode as described in any one in claim 28～30, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of more than 0.4mol%.
32. the photocathode as described in any one in claim 28～30, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of more than 8.8mol%.
33. the photocathode as described in any one in claim 28～30, it is characterised in that
Described photoelectron injection layer is by making potassium metal vapors and caesium metal vapors react and be formed on the alloy firm of SbBi.
34. photocathode as claimed in claim 31, it is characterised in that
Described photoelectron injection layer is by making potassium metal vapors and caesium metal vapors react and be formed on the alloy firm of SbBi.
35. photocathode as claimed in claim 32, it is characterised in that
Described photoelectron injection layer is by making potassium metal vapors and caesium metal vapors react and be formed on the alloy firm of SbBi.
36. the photocathode as described in any one in claim 28～30, it is characterised in that
Described photoelectron injection layer is to be formed by making potassium metal vapors and rubidium metal vapors and caesium metal vapors react on the alloy firm of SbBi.
37. photocathode as claimed in claim 31, it is characterised in that
Described photoelectron injection layer is to be formed by making potassium metal vapors and rubidium metal vapors and caesium metal vapors react on the alloy firm of SbBi.
38. photocathode as claimed in claim 32, it is characterised in that
Described photoelectron injection layer is to be formed by making potassium metal vapors and rubidium metal vapors and caesium metal vapors react on the alloy firm of SbBi.
39. a photocathode, it is characterised in that
Possessing photoelectron injection layer, this photoelectron injection layer contains Sb and Bi and penetrates photoelectron to outside according to the incidence of light,
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of below 32mol%,
Described photoelectron injection layer is by making potassium metal vapors and caesium metal vapors react and be formed on the alloy firm of SbBi.
40. photocathode as claimed in claim 39, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of below 29mol%.
41. photocathode as claimed in claim 39, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of below 16.7mol%.
42. the photocathode as described in any one in claim 39～41, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of more than 0.4mol%.
43. the photocathode as described in any one in claim 39～41, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of more than 8.8mol%.
44. a photocathode, it is characterised in that
Possessing photoelectron injection layer, this photoelectron injection layer contains Sb and Bi and penetrates photoelectron to outside according to the incidence of light,
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of below 32mol%,
Described photoelectron injection layer is to be formed by making potassium metal vapors and rubidium metal vapors and caesium metal vapors react on the alloy firm of SbBi.
45. photocathode as claimed in claim 44, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of below 29mol%.
46. photocathode as claimed in claim 44, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of below 16.7mol%.
47. the photocathode as described in any one in claim 44～46, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of more than 0.4mol%.
48. the photocathode as described in any one in claim 44～46, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of more than 8.8mol%.
49. a photocathode, it is characterised in that
Possess:
Photoelectron injection layer, penetrates photoelectron containing Sb and Bi and according to the incidence of light to outside；
The substrate of photopermeability, is formed at the light incident side of the light of described photoelectron injection layer；And
Basal layer, the light incident side penetrating the light of layer at described photoelectron is formed between described substrate and described photoelectron injection layer and is formed by MgO,
Form described basal layer on the substrate or via by HfO2Formed intermediate layer and form described basal layer,
Described basal layer is formed described photoelectron injection layer,
It is used for Liquid Argon flasher or the optical detection device of liquid xenon flasher.
50. photocathode as claimed in claim 49, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of below 6.9mol%.
51. the photocathode as described in claim 49 or 50, it is characterised in that
Containing relative to Sb and Bi in described photoelectron injection layer is the Bi of more than 0.4mol%.
52. photocathode as claimed in claim 50, it is characterised in that
Peak value place in wavelength 300～430nm demonstrates the quantum efficiency of more than 35%.
53. the photocathode as described in any one in claim 49～52, it is characterised in that
Penetrate the light incident side of the light of layer at described photoelectron, possess by HfO2The described intermediate layer formed.
54. the photocathode as described in any one in claim 49～53, it is characterised in that
Described photoelectron injection layer is formed by making potassium metal vapors and the reaction of caesium metal vapors on the alloy firm of SbBi.
55. the photocathode as described in any one in claim 49～53, it is characterised in that
Described photoelectron injection layer by making potassium metal vapors and rubidium metal vapors react with caesium metal vapors and be formed on the alloy firm of SbBi.
56. a photomultiplier tube, it is characterised in that
Possess in claim 49～55 photocathode described in any one and collect the anode of electronics.
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| JP2008-155777 | 2008-06-13 | ||
| JP2008155777A JP5308078B2 (en) | 2008-06-13 | 2008-06-13 | Photocathode |
| CN200880129779.XA CN102067264B (en) | 2008-06-13 | 2008-11-07 | Photocathode |
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| EP (2) | EP3288060A1 (en) |
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| JP5899187B2 (en) | 2013-11-01 | 2016-04-06 | 浜松ホトニクス株式会社 | Transmission type photocathode |
| JP6419572B2 (en) * | 2014-12-26 | 2018-11-07 | 浜松ホトニクス株式会社 | Photocathode, photoelectric conversion tube, image intensifier, and photomultiplier tube |
| US9766366B2 (en) | 2015-09-14 | 2017-09-19 | Halliburton Energy Services, Inc. | Dark current correction in scinitillator detectors for downhole nuclear applications |
| GB2582466A (en) * | 2017-12-11 | 2020-09-23 | Rapiscan Systems Inc | X-Ray Tomography inspection systems and methods |
| CN110783157B (en) * | 2019-10-24 | 2021-11-05 | 北方夜视技术股份有限公司 | Composite optical film applied to multi-alkali photoelectric cathode and preparation method thereof |
| CN111816533B (en) * | 2019-11-13 | 2022-03-25 | 北方夜视技术股份有限公司 | Double-alkali photoelectric cathode and preparation method thereof |
| CN111261472B (en) * | 2020-03-31 | 2022-03-25 | 北方夜视技术股份有限公司 | Low-thermal-emission photocathode, photomultiplier and preparation method thereof |
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| US2645721A (en) * | 1952-02-16 | 1953-07-14 | Gen Electric | Image intensification apparatus |
| NL233704A (en) * | 1957-12-06 | |||
| JPS52105766A (en) * | 1976-03-03 | 1977-09-05 | Hamamatsu Tv Co Ltd | Photoelectron emitting surface |
| FR2515870A1 (en) * | 1981-11-04 | 1983-05-06 | Labo Electronique Physique | PHOTOCATHODE FOR ELECTRONIC TUBE ENTRY COMPRISING A SEMICONDUCTOR DEVICE WITH TRANSMISSION PHOTO-EMISSION |
| JP3179537B2 (en) | 1991-11-19 | 2001-06-25 | 浜松ホトニクス株式会社 | Photocathode and photomultiplier tube |
| US6770884B2 (en) | 2002-07-11 | 2004-08-03 | Triumf | High resolution 3-D position sensitive detector for gamma rays |
| EP1730795A2 (en) * | 2004-03-31 | 2006-12-13 | Matsushita Electric Industrial Co., Ltd. | Organic photoelectric conversion element utilizing an inorganic buffer layer placed between an electrode and the active material |
| KR100647305B1 (en) * | 2004-12-23 | 2006-11-23 | 삼성에스디아이 주식회사 | Optoelectronic device and lamp and display panel using same |
| JP4926504B2 (en) * | 2006-03-08 | 2012-05-09 | 浜松ホトニクス株式会社 | Photocathode, electron tube provided with the photocathode, and method for producing photocathode |
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| EP2309529B1 (en) | 2017-10-04 |
| WO2009150760A1 (en) | 2009-12-17 |
| EP2309529A4 (en) | 2015-06-03 |
| US8796923B2 (en) | 2014-08-05 |
| CN102067264A (en) | 2011-05-18 |
| JP5308078B2 (en) | 2013-10-09 |
| JP2009301905A (en) | 2009-12-24 |
| CN103887126B (en) | 2017-06-20 |
| CN105788997B (en) | 2018-10-19 |
| US20110089825A1 (en) | 2011-04-21 |
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