CN105489244A - Erasing method of nonvolatile storage - Google Patents
Erasing method of nonvolatile storage Download PDFInfo
- Publication number
- CN105489244A CN105489244A CN201410535686.4A CN201410535686A CN105489244A CN 105489244 A CN105489244 A CN 105489244A CN 201410535686 A CN201410535686 A CN 201410535686A CN 105489244 A CN105489244 A CN 105489244A
- Authority
- CN
- China
- Prior art keywords
- sector
- storage unit
- erase verification
- storage
- erase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000012795 verification Methods 0.000 claims description 110
- 239000000758 substrate Substances 0.000 claims description 13
- 238000010200 validation analysis Methods 0.000 abstract description 11
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 1
Landscapes
- Read Only Memory (AREA)
Abstract
The invention discloses an erasing method of a nonvolatile storage. The method comprises the following steps: S1, sequentially judging whether every sector in a storage block passes erasure validation or not; if the current sector passes the erasure validation, marking the current sector passing the erasure validation and carrying out erasure validation on the next sector of the current sector; and if the current sector does not pass the erasure validation, erasing the rest sectors including the current sector and except the sectors passing the erasure validation in the storage block; and S2, carrying out over-erasure validation on the rest sectors after the erasing and carrying out over-erasure programming on the storage unit not passing the over-erasure validation. The method disclosed by the invention has the advantages that the sectors passing the erasure validation can be prevented from over-erasure and with the increase of the erasure times, the number of the sectors passing the erasure validation in the storage block is gradually increased, the number of the rest sectors needing erasure is smaller and smaller, so that the time of over-erasure programming is saved and the erasing speed of the nonvolatile storage is increased.
Description
Technical field
The present invention relates to semiconductor memory technologies field, be specifically related to a kind of method for deleting of nonvolatile memory.
Background technology
There are two kinds of basic units of storage in nonvolatile memory, i.e. eraseable memory unit (erasecell) and memory cells (programcell), also be " 1 " and " 0 ", therefore, correspondence also exists the basic operation of erasing and these two kinds of non-volatile memory cells of programming.Wherein, the process that " 0 " becomes " 1 " is called erasing, otherwise, be then called programming.
The storage block (Block) of nonvolatile memory generally includes multiple sector (Sector), each sector comprises multiple storage unit, when adding negative pressure to the grid of storage unit, when substrate adds negative pressure, data in sector in storage unit are wiped free of, and are become " 1 " from " 0 " by the data in storage unit.In prior art, when carrying out memory block erasing to nonvolatile memory, first-selected erase verification (EV) is carried out successively to sector in storage block, judge that the information stored in storage unit is " 1 " or " 0 ", when the information stored is " 0 ", just whole storage block is wiped, pass through erase verification (OEV) inspection again and whether there is the excessively dark storage unit of erasing, if exist and wiped dark storage unit, then carried out erasing programming to wiping dark storage unit, the voltage wiping dark storage unit is corrected, be located at threshold voltage or be greater than threshold voltage, when sectors all in storage block are all by EV or when reaching maximum erasing times to the erasing times of storage block, terminate the erasing to storage block.
But, when utilizing above-mentioned prior art to carry out memory block erasing, for all storage unit all by the sector of erase verification still need perform erasing flow process, the storage unit in this sector is easily caused to produce erasing, need when carrying out erase verification afterwards to spend the voltage of plenty of time to the storage unit crossing erasing to correct, thus cause erasing speed slow.
Summary of the invention
In view of this, the embodiment of the present invention provides a kind of method for deleting of nonvolatile memory, to accelerate the erasing speed of nonvolatile memory.
Embodiments provide a kind of method for deleting of nonvolatile memory, described nonvolatile memory comprises multiple storage block, and each storage block comprises multiple sector, and each sector comprises multiple storage unit, and described method comprises:
S1 judges that in storage block, whether each sector is by erase verification successively, if current sector is by erase verification, then marks the current sector by erase verification, carries out erase verification to the next sector of current sector; If current sector is not by erase verification, then in storage block except by except erase verification and erase operation is carried out in the residue sector comprising current sector;
S2 carried out erase verification to the storage unit in the residue sector after erase operation, carried out erasing programming to the storage unit not passing through erase verification.
Further, described method also comprises:
Repeat above-mentioned steps S1 to S2, until all sectors all by erase verification or till reaching threshold value erasing times to the erasing times of described residue sector.
Further, describedly judge in storage block, whether each sector is comprised by erase verification successively:
Read the storage information in storage block in each sector in each storage unit successively;
For current sector, when the storage information of storage unit each in this sector is all 1, judge that erase verification is passed through in this sector; When the storage information of storage unit each in this sector is not all 1, judge that erase verification is not passed through in this sector.
Further, describedly to comprise except carrying out erase operation by except erase verification and the residue sector comprising current sector in storage block:
Positive voltage is added to the wordline by the storage unit in the sector of erase verification, substrate high voltage;
To in storage block except by except erase verification and the wordline comprising the storage unit in the residue sector of current sector adds negative voltage, substrate high voltage.
Further, described high-tension scope is 10V-15V.
Further, describedly erase verification carried out to the storage unit in the residue sector after erase operation comprised:
After judging erase operation, in described residue sector, whether the threshold voltage of each storage unit is less than predetermined threshold voltage, and the storage unit that if so, then judgment threshold voltage is less than predetermined threshold voltage did not pass through erase verification.
Further, described judge erase operation after residue sector in the threshold voltage of each storage unit whether be less than predetermined threshold voltage and comprise:
Read the storage information in each storage unit in the residue sector after erase operation successively, for each storage unit, when storage information is 0 in this storage unit, judge that the threshold voltage of this storage unit is greater than predetermined threshold voltage; When storage information is 1 in this storage unit, judge that the threshold voltage of this storage unit is less than predetermined threshold voltage.
Further, the described storage unit to not passing through erase verification was carried out erasing programming and was comprised: the positive voltage to the storage unit the not passing through erase verification program voltage carried out when wiping programming being a set potential.
The present invention is by judging in storage block, whether each sector passes through erase verification successively, if erase verification is passed through in current sector, then the current sector by erase verification is marked, erase verification is carried out to the next sector of current sector, if erase verification is not passed through in current sector, then in storage block except by except erase verification and erase operation is carried out in the residue sector comprising current sector, erase verification was carried out to the storage unit in the residue sector after erase operation, erasing programming was carried out to the storage unit not passing through erase verification.In erase process, do not need to apply erasing voltage to the sector by erase verification, prevented erasing, and along with the increase of erasing times, also increased gradually by the number of the sector of erase verification in described storage block, thus need the growing number of the residue sector of carrying out erase operation few, thus save the time of carrying out wiping programming by the sector of erase verification, improve the erasing speed of nonvolatile memory.
Accompanying drawing explanation
Exemplary embodiment of the present invention will be described in detail by referring to accompanying drawing below, the person of ordinary skill in the art is more clear that above-mentioned and other feature and advantage of the present invention, in accompanying drawing:
Fig. 1 is the method for deleting process flow diagram of the nonvolatile memory that the embodiment of the present invention provides;
Fig. 2 is the method for deleting of the nonvolatile memory of embodiment of the present invention schematic diagram when carrying out erase operation.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.It also should be noted that, for convenience of description, illustrate only part related to the present invention in accompanying drawing but not full content.
Fig. 1 is the method for deleting process flow diagram of the nonvolatile memory of the embodiment of the present invention, and the method is applicable in nonvolatile memory carries out data erase, and details are as follows for this realization flow:
Step S1, to judge in storage block that whether each sector is by erase verification, if current sector is by erase verification, performs step S1a, marks, carry out erase verification to the next sector of current sector to the current sector by erase verification successively; If current sector is not by erase verification, perform step S1b, in storage block except by except erase verification and erase operation is carried out in the residue sector comprising current sector.
Particularly, describedly judge in storage block, whether each sector can be comprised by erase verification successively:
Storage information in step S11, successively reading storage block in each sector in each storage unit.
In this step, can successively in storage block each sector send the instruction of reading information, for the current sector in storage block, the storage information in this sector in each storage unit is read according to described reading information command in this sector.
Step S12, for current sector, when the storage information of storage unit each in this sector is all 1, judge that erase verification is passed through in this sector; When the storage information of storage unit each in this sector is not all 1, judge that erase verification is not passed through in this sector.
Judge whether this sector passes through erase verification according to the storage information in storage unit each in current sector, when in this sector, the storage information of each storage unit is 1, judge that erase verification is passed through in this sector, when the storage information of storage unit a part of in this sector is 1, when the storage information of another part storage unit is 0, judge that erase verification is not passed through in this sector.
Step S1a, the current sector by erase verification to be marked, erase verification is carried out to the next sector of current sector.
In this step, when current sector in storage block is by erase verification, this current sector by erase verification is marked, erase verification is carried out to next sector, particularly, can will pass through the sector storage of erase verification in latch, to by the information temporary storage in the sector of erase verification, to be all 1 level state with the information maintained in the sector by erase verification in each storage unit.
Step S1b, in storage block except by except erase verification and erase operation is carried out in the residue sector comprising current sector.
Fig. 2 is the method for deleting of the nonvolatile memory of embodiment of the present invention schematic diagram when carrying out erase operation, as shown in Figure 2, describedly can to comprise except carrying out erase operation by except erase verification and the residue sector comprising current sector in storage block:
Step S1b1, positive voltage is added to the wordline by the storage unit in the sector of erase verification, substrate high voltage.
Described storage unit is also a metal-oxide-semiconductor usually, have a source electrode, a drain electrode, a grid, also has a floating grid in addition, visible, its structure is slightly different with general metal-oxide-semiconductor, many floating grids, the wordline of storage unit is connected with the grid of metal-oxide-semiconductor, adds positive voltage V to the wordline of the storage unit of the sector by erase verification
pOS, substrate high voltage, wherein, described positive voltage V
pOScan be 3V, described high-tension scope can be 10V-15V, as shown in Figure 2, in figure, inside sector 2, the storage information of each storage unit is all 1, therefore positive voltage is added to the wordline of storage unit each in sector 2, substrate high voltage, is applied to 0 voltage by the bit line of the storage unit in the sector of erase verification, source electrode and substrate, prevents from, by the sector of erase verification, erasing occurred.
Step S1b2, in storage block except by except erase verification and the wordline comprising the storage unit in the residue sector of current sector adds negative voltage, substrate high voltage.
In the present embodiment, successively erase verification is carried out to sector each in storage block, sector by erase verification is marked, in erase process afterwards, the wordline of the storage unit in labeled sector is added positive voltage, substrate high voltage, will not add negative voltage by the wordline of the storage unit of the sector of erase verification, substrate high voltage.Namely in storage block except by except erase verification and erase operation is carried out in the residue sector comprising current sector.As shown in Figure 2, in figure, in sector 1, sector 3 and sector N, the storage information of each storage unit is not all 1, and namely sector 1, sector 3 and sector N be not by erase verification, therefore adds negative voltage V to the wordline of each storage unit in sector 1, sector 3 and sector N
nEG, substrate high voltage, thus only carry out erase operation to the sector not by erase verification, describedly high-tensionly ranges preferably between 10V-15V, can produce high voltage by charge pump.
Step S2, erase verification was carried out to the storage unit in the residue sector after erase operation, erasing programming was carried out to the storage unit not passing through erase verification.
Erase verification was carried out to the storage unit of carrying out in the residue sector after erase operation (namely not by the sector of erase verification), erasing programming was carried out to the storage unit not passing through erase verification.
Wherein, describedly erase verification carried out to the storage unit in the described residue sector after erase operation comprised:
Step S21, judge erase operation after in described residue sector the threshold voltage of each storage unit whether be less than predetermined threshold voltage, the storage unit that if so, then judgment threshold voltage is less than predetermined threshold voltage did not pass through erase verification.
Described predetermined threshold voltage is the minimum value meeting normal erase state threshold voltages scope in a technological process, particularly, the value of described predetermined threshold voltage can for the minimum value avoiding each storage unit to produce the threshold voltage ranges of each storage unit of leakage current, if in described residue sector, the threshold voltage of each storage unit is less than predetermined threshold voltage after erase operation, can leakage current be there is in the storage unit that then threshold voltage is less than predetermined threshold voltage, wherein, even if leakage current refers to that the grounded-grid of storage unit also has electric current and exists, thus affect the storage feature of nonvolatile memory, therefore, storage unit threshold voltage being less than to predetermined threshold voltage is needed to carry out erasing programming, the threshold voltage of each storage unit in nonvolatile memory is made to be more than or equal to predetermined threshold voltage, the described storage unit to not passing through erase verification was carried out erasing programming and can be comprised, it is the positive voltage of a set potential to the storage unit (namely threshold voltage is less than the storage unit of predetermined threshold voltage) the not passing through erase verification program voltage carried out when wiping programming, particularly, when determining the numerical value of concrete program voltage can by nonvolatile memory in the physical characteristics of each storage unit and lot of experiment validation draw, the present invention does not limit concrete numerical value.
Particularly, after judging erase operation described in step S21, in described residue sector, whether the threshold voltage of each storage unit is less than predetermined threshold voltage and can comprises:
Storage information after step S211, successively reading erase operation in described residue sector in each storage unit, for each storage unit, when storage information is 0 in this storage unit, judges that the threshold voltage of this storage unit is greater than predetermined threshold voltage; When storage information is 1 in this storage unit, judge that the threshold voltage of this storage unit is less than predetermined threshold voltage.
In this step, can judge according to the storage information in each storage unit in residue sector described after the erase operation read whether the threshold voltage of this storage unit is less than predetermined threshold voltage, when storage information in this storage unit is 0, show that the threshold voltage of this storage unit is higher, be in programming state, judge that the threshold voltage of this storage unit is greater than predetermined threshold voltage; When in this storage unit, storage information is 1, show that the threshold voltage of this storage unit is lower, be in erase status, judge that the threshold voltage of this storage unit is less than predetermined threshold voltage.
Preferably, the method for deleting of nonvolatile memory that the embodiment of the present invention provides also can comprise:
Repeat above-mentioned steps S1 to S2, until all sectors all by erase verification or till reaching threshold value erasing times to the erasing times of described residue sector.
In to storage block after all sector execution of step S1 to S2, the information of storage unit in a part of sector is had at least to become complete 1 state in storage block, repeated execution of steps S1 to S2, judge in storage block, whether each sector passes through erase verification, if erase verification is passed through in current sector, then the current sector by erase verification is marked, erase verification is carried out to the next sector of current sector, in the process of repeated execution of steps S1 to S2, can be many by the growing number of the sector of erase verification, therefore, along with the carrying out of erase operation, need the growing number of the sector of carrying out erase operation few, accordingly, the number carrying out the sector of erase verification is also fewer and feweri, thus greatly saved the time of erasing programming, accelerate the erasing speed of nonvolatile memory.
The method for deleting of the nonvolatile memory that the embodiment of the present invention provides, by judging in storage block, whether each sector passes through erase verification successively, if erase verification is passed through in current sector, then the current sector by erase verification is marked, erase verification is carried out to the next sector of current sector, if erase verification is not passed through in current sector, then in storage block except by except erase verification and erase operation is carried out in the residue sector comprising current sector, erase verification was carried out to the storage unit in the residue sector after erase operation, erasing programming was carried out to the storage unit not passing through erase verification.In erase process, do not need to apply erasing voltage to the sector by erase verification, prevented erasing, and along with the increase of erasing times, also increased gradually by the number of the sector of erase verification in described storage block, thus need the growing number of the residue sector of carrying out erase operation few, thus save the time of carrying out wiping programming by the sector of erase verification, improve the erasing speed of nonvolatile memory.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, to those skilled in the art, the present invention can have various change and change.All do within spirit of the present invention and principle any amendment, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a method for deleting for nonvolatile memory, described nonvolatile memory comprises multiple storage block, and each storage block comprises multiple sector, and each sector comprises multiple storage unit, it is characterized in that, described method comprises:
S1 judges that in storage block, whether each sector is by erase verification successively, if current sector is by erase verification, then marks the current sector by erase verification, carries out erase verification to the next sector of current sector; If current sector is not by erase verification, then in storage block except by except erase verification and erase operation is carried out in the residue sector comprising current sector;
S2 carried out erase verification to the storage unit in the residue sector after erase operation, carried out erasing programming to the storage unit not passing through erase verification.
2. the method for deleting of nonvolatile memory according to claim 1, is characterized in that, described method also comprises:
Repeat above-mentioned steps S1 to S2, until all sectors all by erase verification or till reaching threshold value erasing times to the erasing times of described residue sector.
3. the method for deleting of nonvolatile memory according to claim 1, is characterized in that, describedly judges in storage block, whether each sector is comprised by erase verification successively:
Read the storage information in storage block in each sector in each storage unit successively;
For current sector, when the storage information of storage unit each in this sector is all 1, judge that erase verification is passed through in this sector; When the storage information of storage unit each in this sector is not all 1, judge that erase verification is not passed through in this sector.
4. the method for deleting of nonvolatile memory according to claim 1, is characterized in that, describedly comprises except carrying out erase operation by except erase verification and the residue sector comprising current sector in storage block:
Positive voltage is added to the wordline by the storage unit in the sector of erase verification, substrate high voltage;
To in storage block except by except erase verification and the wordline comprising the storage unit in the residue sector of current sector adds negative voltage, substrate high voltage.
5. the method for deleting of nonvolatile memory according to claim 4, is characterized in that, described high-tension scope is 10V-15V.
6. the method for deleting of nonvolatile memory according to claim 1, is characterized in that, describedly carries out erase verification to the storage unit in the residue sector after erase operation and comprises:
After judging erase operation, in described residue sector, whether the threshold voltage of each storage unit is less than predetermined threshold voltage, and the storage unit that if so, then judgment threshold voltage is less than predetermined threshold voltage did not pass through erase verification.
7. the method for deleting of nonvolatile memory according to claim 6, is characterized in that, described judge erase operation after residue sector in the threshold voltage of each storage unit whether be less than predetermined threshold voltage and comprise:
Read the storage information in each storage unit in the residue sector after erase operation successively, for each storage unit, when storage information is 0 in this storage unit, judge that the threshold voltage of this storage unit is greater than predetermined threshold voltage; When storage information is 1 in this storage unit, judge that the threshold voltage of this storage unit is less than predetermined threshold voltage.
8. the method for deleting of nonvolatile memory according to claim 1, is characterized in that, the described storage unit to not passing through erase verification was carried out erasing programming and comprised:
It is the positive voltage of a set potential to the storage unit the not passing through erase verification program voltage carried out when wiping programming.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410535686.4A CN105489244A (en) | 2014-10-11 | 2014-10-11 | Erasing method of nonvolatile storage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410535686.4A CN105489244A (en) | 2014-10-11 | 2014-10-11 | Erasing method of nonvolatile storage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105489244A true CN105489244A (en) | 2016-04-13 |
Family
ID=55676184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410535686.4A Pending CN105489244A (en) | 2014-10-11 | 2014-10-11 | Erasing method of nonvolatile storage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105489244A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106158034A (en) * | 2016-07-06 | 2016-11-23 | 北京兆易创新科技股份有限公司 | A kind of method for deleting of memory cell |
| CN109872760A (en) * | 2017-12-01 | 2019-06-11 | 北京兆易创新科技股份有限公司 | A kind of memory method for deleting and device |
| CN109872759A (en) * | 2017-12-01 | 2019-06-11 | 北京兆易创新科技股份有限公司 | A kind of memory method for deleting and device |
| CN111240587A (en) * | 2019-12-30 | 2020-06-05 | 深圳市芯天下技术有限公司 | Erasing method and device of nonvolatile memory |
| CN111599399A (en) * | 2019-02-21 | 2020-08-28 | 晶豪科技股份有限公司 | Erase method used in flash memory |
| CN111785313A (en) * | 2020-06-28 | 2020-10-16 | 深圳市芯天下技术有限公司 | Method, system, storage medium and terminal for reducing over-erasure phenomenon and erasure time |
| CN113409863A (en) * | 2021-06-28 | 2021-09-17 | 芯天下技术股份有限公司 | Method and device for reducing erasing time, electronic equipment and storage medium |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1432181A (en) * | 2000-04-04 | 2003-07-23 | 阿特梅尔股份有限公司 | Page mode erase in flash memory array |
| CN1512514A (en) * | 2002-12-26 | 2004-07-14 | ��ʽ���������Ƽ� | Data erasing method of nonvolatile semiconductor memory |
| US20070076465A1 (en) * | 2005-10-04 | 2007-04-05 | Elite Semiconductor Memory Technology, Inc. | Erase method to reduce erase time and to prevent over-erase |
| CN102543194A (en) * | 2010-12-28 | 2012-07-04 | 上海复旦微电子股份有限公司 | Erasing method for flash memory |
| CN102568594A (en) * | 2010-12-16 | 2012-07-11 | 北京兆易创新科技有限公司 | Over-erasing processing method and system for nonvolatile memory |
| US20120224432A1 (en) * | 2011-03-03 | 2012-09-06 | Chung-Meng Huang | Over-erase verification and repair methods for flash memory |
| CN103426474A (en) * | 2012-05-16 | 2013-12-04 | 北京兆易创新科技股份有限公司 | Nonvolatile memory erase method and device |
| CN104008777A (en) * | 2013-02-25 | 2014-08-27 | 北京兆易创新科技股份有限公司 | Erasing method of nonvolatile memory, and apparatus thereof |
-
2014
- 2014-10-11 CN CN201410535686.4A patent/CN105489244A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1432181A (en) * | 2000-04-04 | 2003-07-23 | 阿特梅尔股份有限公司 | Page mode erase in flash memory array |
| CN1512514A (en) * | 2002-12-26 | 2004-07-14 | ��ʽ���������Ƽ� | Data erasing method of nonvolatile semiconductor memory |
| US20070076465A1 (en) * | 2005-10-04 | 2007-04-05 | Elite Semiconductor Memory Technology, Inc. | Erase method to reduce erase time and to prevent over-erase |
| CN102568594A (en) * | 2010-12-16 | 2012-07-11 | 北京兆易创新科技有限公司 | Over-erasing processing method and system for nonvolatile memory |
| CN102543194A (en) * | 2010-12-28 | 2012-07-04 | 上海复旦微电子股份有限公司 | Erasing method for flash memory |
| US20120224432A1 (en) * | 2011-03-03 | 2012-09-06 | Chung-Meng Huang | Over-erase verification and repair methods for flash memory |
| CN103426474A (en) * | 2012-05-16 | 2013-12-04 | 北京兆易创新科技股份有限公司 | Nonvolatile memory erase method and device |
| CN104008777A (en) * | 2013-02-25 | 2014-08-27 | 北京兆易创新科技股份有限公司 | Erasing method of nonvolatile memory, and apparatus thereof |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106158034A (en) * | 2016-07-06 | 2016-11-23 | 北京兆易创新科技股份有限公司 | A kind of method for deleting of memory cell |
| CN109872760A (en) * | 2017-12-01 | 2019-06-11 | 北京兆易创新科技股份有限公司 | A kind of memory method for deleting and device |
| CN109872759A (en) * | 2017-12-01 | 2019-06-11 | 北京兆易创新科技股份有限公司 | A kind of memory method for deleting and device |
| CN109872759B (en) * | 2017-12-01 | 2023-07-25 | 兆易创新科技集团股份有限公司 | Memory erasing method and device |
| CN111599399A (en) * | 2019-02-21 | 2020-08-28 | 晶豪科技股份有限公司 | Erase method used in flash memory |
| CN111599399B (en) * | 2019-02-21 | 2022-08-05 | 晶豪科技股份有限公司 | Erase method used in flash memory |
| CN111240587A (en) * | 2019-12-30 | 2020-06-05 | 深圳市芯天下技术有限公司 | Erasing method and device of nonvolatile memory |
| CN111785313A (en) * | 2020-06-28 | 2020-10-16 | 深圳市芯天下技术有限公司 | Method, system, storage medium and terminal for reducing over-erasure phenomenon and erasure time |
| CN111785313B (en) * | 2020-06-28 | 2021-04-06 | 深圳市芯天下技术有限公司 | Method, system, storage medium and terminal for reducing over-erasure phenomenon and erasure time |
| CN113409863A (en) * | 2021-06-28 | 2021-09-17 | 芯天下技术股份有限公司 | Method and device for reducing erasing time, electronic equipment and storage medium |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105489244A (en) | Erasing method of nonvolatile storage | |
| CN103730158B (en) | Nonvolatile semiconductor memory, scrubbing method and programmed method | |
| CN102568594B (en) | A kind of erasing disposal route and disposal system excessively of nonvolatile memory | |
| CN100557713C (en) | Flash memory device and driving method thereof | |
| CN102800362B (en) | The erasing processing method excessively of nonvolatile storage and the system of process | |
| TWI545572B (en) | Memory cell programming method, memory control circuit unit and memory storage apparatus | |
| CN107918523B (en) | Data storage device and data writing method thereof | |
| CN104765695A (en) | NAND FLASH bad block management system and method | |
| CN103811068A (en) | Method and system for erasing nonvolatile memory | |
| CN105575430A (en) | Erasing method of nonvolatile memory | |
| CN105575427B (en) | Erasing method of nonvolatile memory | |
| CN104751885B (en) | FLASH chip and erasing or the programmed method for coping with FLASH chip powered-off fault | |
| CN104376872A (en) | Method for processing erase interrupt of flash memory | |
| CN105989883B (en) | Memory programming method, memory storage device and memory control circuit unit | |
| CN113409860A (en) | Nonvolatile memory erasing method, device, storage medium and terminal | |
| CN104751889A (en) | Nonvolatile memory reset method | |
| CN105702292A (en) | Data recovery method and apparatus for nonvolatile memory | |
| CN101174472B (en) | Screening method for defective memory cells | |
| CN105023608A (en) | Flash memory and management method of bad block | |
| CN104575605B (en) | Memory device and method for starting system by using nonvolatile memory | |
| KR20070109684A (en) | How to erase NAND flash memory device | |
| CN113628659B (en) | Erasing method, device and computer readable storage medium | |
| CN103971746A (en) | Solid-state storage device and data erasing method thereof | |
| US9007829B2 (en) | Memory repairing method, and memory controller and memory storage apparatus using the same | |
| CN104616689A (en) | Operation method of memory |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160413 |
|
| RJ01 | Rejection of invention patent application after publication |