CN104008777A - Erasing method of nonvolatile memory, and apparatus thereof - Google Patents
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Abstract
The invention provides an erasing method of a nonvolatile memory, and an apparatus thereof. The method comprises the following steps: carrying out pre-programming operation on a target erasing block, wherein the target erasing block comprises a plurality of target erasing sectors; erasing by applying erasing pulses to the pre-programmed target erasing sectors; carrying out erasing verification on the erased target erasing sectors; continuously erasing by applying erasing pulses to erasing verification failed target erasing sectors if the erasing verification failed target erasing sectors exist until the erasing verification of all the target erasing sectors in the target erasing block is successful; and carrying out over erasing correction on the erasing verification successful target erasing sectors. The method and the apparatus have the advantages of reduction of the erasing time of the target erasing block, reduction of the over-erased target erasing sectors, reduction of the over-erased correction quantity and the correction time, and improvement of the erasing accuracy and efficiency.
Description
Technical field
The present invention relates to semiconductor memory technologies field, particularly relate to a kind of method for deleting of nonvolatile memory, and, a kind of erasing apparatus of nonvolatile memory.
Background technology
Along with developing rapidly and widespread use of various electronic installations and embedded system, as computing machine, personal digital assistant, mobile phone, digital camera etc., need in a large number one repeatedly to programme, capacity is large, read and write, wipe quick and easy, simple, peripheral components is few, the memory device of cheap non-volatile (still can keep stored data message under powering-off state).Nonvolatile semiconductor memory member arises at the historic moment under this background demand.
For the general design of nonvolatile memory, can only delete with the form of full wafer, monoblock (block) or sector (sector), and can not be deleted by byte.
Taking flash memory (Flash Memory) as example, it is a kind of storer of based semiconductor, have and still can retain internal information, the functional characteristics such as online erasable after system power failure, flash memory injects mechanism by thermoelectron to be realized device programming, adopts tunnel effect realization to wipe.
In the time that nonvolatile memory is wiped, if certain sector is because erasing times is too much, cause this sector erasing time elongated, in the time that the block at this sector place is wiped, the block erasing time also can be elongated, cause the most at last in this block other sector owing to wiping for a long time the situation of wiping that produced, user experiences not good.
Therefore, one of problem that those skilled in the art are in the urgent need to address is, has proposed a kind of erase mechanism of nonvolatile memory, wipes risk in order to greatly to reduce, and improves the accuracy of wiping of storer.
Summary of the invention
Technical matters to be solved by this invention is to provide the method for deleting that relates to a kind of nonvolatile memory, and a kind of erasing apparatus of nonvolatile memory, in order to reduce the carrying out erasing time of target erase block, reduced the target of wiping and wipe sector.
In order to address the above problem, the invention discloses a kind of method of non-volatile memory erase, comprising:
Target erase block is carried out to pre-programmed operation; Described target erase block comprises that multiple targets wipe sector;
Wiping sector for described multiple targets through pre-programmed operation applies erasing pulse and wipes;
Multiple targets of wiping for described process are wiped sector and are wiped verification;
If the target of wiping verification failure described in existing is wiped sector, wipe sector for described target of wiping verification failure and apply erasing pulse and continue to wipe, until all targets in described target erase block are wiped sector erasing verification succeeds;
Wipe sector for the target of wiping verification succeeds and carried out wiping correction.
Preferably,, also comprise for wiping through multiple targets of wiping after sector wipes the step of verification described:
Wiping sector assign erasure for the target of wiping verification succeeds successfully identifies;
Wiping sector assign erasure for the target of wiping verification failure unsuccessfully identifies.
Preferably, exist the target of wiping verification failure to wipe sector if described, wipe sector for described target of wiping verification failure and apply erasing pulse and continue to wipe, comprise until all targets in described target erase block are wiped the step of sector erasing verification succeeds:
Sub-step S1, judges whether to exist the target of wiping unsuccessfully mark to wipe sector, if so, carries out sub-step S2, if not, carries out sub-step S4;
Sub-step S2, wipes sector for the described target with the mark of wiping unsuccessfully and applies erasing pulse and continue to wipe;
Sub-step S3, wipe sector through the target that continues to wipe and wipe verification for described, and wipe sector assign erasure for the target of wiping verification succeeds and successfully identify, wipe sector assign erasure for the target of wiping verification failure and unsuccessfully identify, then return to sub-step S1;
Sub-step S4, stops applying erasing pulse, finishes wiping of current goal erase block.
Preferably, described method also comprises:
In the time applying the number of times of erasing pulse and reach maximum preset erasing times, stop applying erasing pulse, finish wiping of current goal erase block.
Preferably, describedly wipe the step of verification and comprise for wipe sector through multiple targets of wiping:
Described target is wiped to storage unit in sector to be applied calibration voltage and generates threshold voltage;
Judge that whether described threshold voltage is higher than preset reference voltage;
If so, judge the verification succeeds of wiping of wiping sector for described target;
If not, judge wipe sector for described target wipe verification failure.
The present invention also provides a kind of device of non-volatile memory erase, comprising:
Pre-programmed module, for carrying out pre-programmed operation to target erase block; Described target erase block comprises that multiple targets wipe sector;
Wipe module, apply erasing pulse and wipe for wipe sector for described multiple targets through pre-programmed operation;
Wipe correction verification module, wipe sector for multiple targets of wiping for described process and wipe verification;
Wipe judge module, if wipe sector for the target of wiping verification failure described in existence, wipe sector for described target of wiping verification failure and apply erasing pulse and continue to wipe, until all targets in described target erase block are wiped sector erasing verification succeeds;
Cross and wipe correction module, carried out wiping correction for wiping sector for the target of wiping verification succeeds.
Preferably, described wipe correction verification module after, also comprise:
Success identification module, successfully identifies for wiping sector assign erasure for the target of wiping verification succeeds;
Failure identification module, unsuccessfully identifies for wiping sector assign erasure for the target of wiping verification failure.
Preferably, described in, wiping judge module comprises:
Judge submodule, exist the target of wiping unsuccessfully mark to wipe sector for judging whether, if so, call and continue to wipe submodule, if not, call and stop wiping submodule;
Continue to wipe submodule, apply erasing pulse and continue to wipe for the described target with the mark of wiping unsuccessfully being wiped to sector;
Syndrome module, for wiping sector through the target that continues to wipe and wipe verification for described, and wipe sector assign erasure for the target of wiping verification succeeds and successfully identify, wipe sector assign erasure for the target of wiping verification failure and unsuccessfully identify, then call judgement submodule;
Stop wiping submodule, for stopping applying erasing pulse, finish wiping of current goal erase block.
Preferably, described device also comprises:
Wipe end module, in the time applying the number of times of erasing pulse and reach maximum preset erasing times, stop applying erasing pulse, finish wiping of current goal erase block.
Preferably, described in, wiping correction verification module comprises:
Threshold voltage generates submodule, applies calibration voltage and generates threshold voltage for described target being wiped to sector storage unit;
Threshold voltage judges submodule, for judging that whether described threshold voltage is higher than preset reference voltage;
Verification succeeds submodule, for judging the verification succeeds of wiping of wiping sector for described target;
Verification failure submodule, for judge wipe sector for described target wipe verification failure.
Compared with prior art, the present invention includes following advantage:
The present invention wipes sector as minimum erase unit taking target in target erase block, target is wiped to sector to be applied erasing pulse and carries out erase operation, wipe sector and continue to apply erasing pulse and wipe wiping the target of verification failure, wipe sector and stop applying erasing pulse and wipe wiping the target of verification succeeds, until all targets in target erase block are wiped sector erasing verification succeeds, can reduce the carrying out erasing time of target erase block, reduce the target of wiping and wiped sector, reduced and wipe the quantity of correction and correct the needed time, improve accuracy and the efficiency of wiping.
Brief description of the drawings
Fig. 1 is the flow chart of steps of the embodiment of the method for a kind of non-volatile memory erase of the present invention;
Fig. 2 is the structured flowchart of the device embodiment of a kind of non-volatile memory erase of the present invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
One of core idea of the present invention is, in to target erase block, wipe sector as minimum erase unit taking target, target is wiped to sector to be applied erasing pulse and carries out erase operation, wipe sector and continue to apply erasing pulse and wipe wiping the target of verification failure, wipe sector and stop applying erasing pulse and wipe wiping the target of verification succeeds, until all targets in target erase block are wiped sector erasing verification succeeds, can reduce the carrying out erasing time of target erase block, reduce the target of wiping and wiped sector, improve the accuracy of wiping.
With reference to Fig. 1, show the flow chart of steps of the embodiment of the method for a kind of non-volatile memory erase of the present invention, described method specifically can comprise the steps:
Step 101, carries out pre-programmed operation to target erase block; Described target erase block comprises that multiple targets wipe sector;
Described target erase block comprises and can multiple targets wipe sector, and it is the minimum erase units in target erase block that described target is wiped sector.In embodiments of the present invention, described pre-programmed operation (Pre_Program) can be 0 value for the cell in target erase block (storage unit) is programmed; In specific implementation, pre-programmed operation is to write 0 for the cell in target erase block, that is to say and makes cell in high threshold voltage state, to improve the stability of erase operation.
Being understandable that, in practice, for the cell in target erase block, is not that each must carry out pre-programmed, and the data in some cell were exactly 0 originally, just can unnecessary execution pre-programmed operate so for this part cell; And only to carrying out the cell of pre-programmed operation, the cell that is 1 as data carries out pre-programmed operation.
Step 102, wipes sector for described multiple targets through pre-programmed operation and applies erasing pulse and wipe;
Complete after pre-programmed operation when the target in target erase block being wiped to sector, then start to apply erasing pulse the cell that has carried out the target of pre-programmed operation and wipe in sector is wiped.
Step 103, wipes sector through multiple targets of wiping and wipes verification for described;
In a preferred embodiment of the present invention, described step 103 can comprise following sub-step:
Step S11, wipes storage unit in sector to described target and applies calibration voltage and generate threshold voltage;
Step S12, judges that whether described threshold voltage is higher than preset reference voltage; If so, perform step S13, if not, perform step S14;
Step S13, judges the verification succeeds of wiping of wiping sector for described target;
Step S14, judge wipe sector for described target wipe verification failure.
In practice, judge that target is wiped to sector verification wipes whether successful method is in different operating process, uses different reference voltages and calibration voltage to go to read target and wipes the data of storing in the cell of sector.When some calibration voltages are added to cell, after the current conversion on cell is voltage, compare with reference voltage, judgement is " 1 " or " 0 ", can be determined and be wiped verification succeeds or failure by judged result.
Step 104, if the target of wiping verification failure described in existing is wiped sector, wipes sector for described target of wiping verification failure and applies erasing pulse and continue to wipe, until all targets in described target erase block are wiped sector erasing verification succeeds;
In a preferred embodiment of the present invention, described, for wiping through multiple targets of wiping after sector wipes the step of verification, described method can also comprise the steps:
Wiping sector assign erasure for the target of wiping verification succeeds successfully identifies;
Wiping sector assign erasure for the target of wiping verification failure unsuccessfully identifies.
In specific implementation, wipe sector for convenient identification through the target that applies erasing pulse and wipe and wipe successfully or wipe unsuccessfully, can according to target wipe the check results allocation identification of sector.For example, can wipe sector assign erasure and successfully identify (can use " 0 " mark) wiping the target of verification succeeds, wipe sector assign erasure and unsuccessfully identify (can use one token) wiping the target of verification failure.
Certainly, also can use in the present invention other mark to wipe sector to target and carry out mark, for example also can use one token to wipe verification succeeds target sector, use " 0 " erasure of marks verification failure target sector all can, the present invention does not limit this.
In a preferred embodiment of the present invention, described step 104 can comprise following sub-step:
Sub-step S1, judges whether to exist the target of wiping unsuccessfully mark to wipe sector, if so, carries out sub-step S2, if not, carries out sub-step S4;
Sub-step S2, wipes sector for the described target with the mark of wiping unsuccessfully and applies erasing pulse and continue to wipe;
Sub-step S3, wipe sector through the target that continues to wipe and wipe verification for described, and wipe sector assign erasure for the target of wiping verification succeeds and successfully identify, wipe sector assign erasure for the target of wiping verification failure and unsuccessfully identify, then return to sub-step S1;
Sub-step S4, stops applying erasing pulse, finishes wiping of current goal erase block.
In embodiments of the present invention, wipe sector as base unit taking minimum erase unit target, for example in a target erase block block, there is M target to wipe sector sector, in the time that target erase block is wiped to (erase), at the beginning M sector being applied to erasing pulse (erase pulse) together wipes, only continue to apply erasing pulse and wipe wiping the sector of verification failure (fail) afterwards, wipe and forbid applying erasing pulse for the sector that wipes verification succeeds (pass), until complete wiping target erase block, reduced greatly the incidence of wiping, minimizing need be carried out wiping the target of correction and wipes the quantity of sector and carry out wiping and correct the needed time.
Step 105, wipes sector for the target of wiping verification succeeds and carried out wiping correction.
In practice, also may exist and wipe for the region of wiping verification succeeds, also to carry out wiping correction, wipe verification succeeds until cross.
The described mistake that target is wiped to sector is wiped the cell that correction can adopt default program voltage to wipe in sector lower than the target of specific voltage value for threshold voltage and is programmed, can reduce the target of wiping and wipe sector, improve the consistance that cell threshold voltage distributes.When target wipe sector carrying out wipe verification succeeds, target is wiped sector while reaching predetermined threshold voltage ranges, completes the mistake that target is wiped to sector and wipes correction.
In a preferred embodiment of the present invention, described method can also comprise the steps:
In the time applying the number of times of erasing pulse and reach maximum preset erasing times, stop applying erasing pulse, finish wiping of current goal erase block.
In specific implementation, may the target after erase verification wiping sector can not all wipe successfully always, be absorbed in endless loop for fear of causing to wipe, maximum preset erasing times can be set, in the time applying the number of times of erasing pulse and reach maximum preset erasing times, can finish wiping of current goal erase block.
The present invention is applicable to wiping of larger erase block, is certainly applicable to too wiping of whole memory chip.
It should be noted that, for embodiment of the method, for simple description, therefore it is all expressed as to a series of combination of actions, but those skilled in the art should know, the present invention is not subject to the restriction of described sequence of movement, because according to the present invention, some step can adopt other orders or carry out simultaneously.Secondly, those skilled in the art also should know, the embodiment described in instructions all belongs to preferred embodiment, and related action and module might not be that the present invention is necessary.
With reference to Fig. 2, show the structured flowchart of the device embodiment of a kind of non-volatile memory erase of the present invention, specifically can comprise with lower module:
Pre-programmed module 201, for carrying out pre-programmed operation to target erase block; Described target erase block comprises that multiple targets wipe sector;
Wipe module 202, apply erasing pulse and wipe for wipe sector for described multiple targets through pre-programmed operation; Wipe correction verification module 203, for wiping sector through multiple targets of wiping and wipe verification for described;
In a preferred embodiment of the present invention, described wipe correction verification module 203 after, can also comprise as lower module:
Success identification module, successfully identifies for wiping sector assign erasure for the target of wiping verification succeeds;
Failure identification module, unsuccessfully identifies for wiping sector assign erasure for the target of wiping verification failure.
In a preferred embodiment of the present invention, described in wipe correction verification module 203 and can comprise following submodule:
Threshold voltage generates submodule, applies calibration voltage and generates threshold voltage for described target being wiped to sector storage unit;
Threshold voltage judges submodule, for judging that whether described threshold voltage is higher than preset reference voltage;
Verification succeeds submodule, for judging the verification succeeds of wiping of wiping sector for described target;
Verification failure submodule, for judge wipe sector for described target wipe verification failure.
Wipe judge module 204, if wipe sector for the target of wiping verification failure described in existence, wipe sector for described target of wiping verification failure and apply erasing pulse and continue to wipe, until all targets in described target erase block are wiped sector erasing verification succeeds;
In a preferred embodiment of the present invention, described in wipe judge module 204 and can comprise following submodule:
Judge submodule, exist the target of wiping unsuccessfully mark to wipe sector for judging whether, if so, call and continue to wipe submodule, if not, call and stop wiping submodule;
Continue to wipe submodule, apply erasing pulse and continue to wipe for the described target with the mark of wiping unsuccessfully being wiped to sector;
Syndrome module, for wiping sector through the target that continues to wipe and wipe verification for described, and wipe sector assign erasure for the target of wiping verification succeeds and successfully identify, wipe sector assign erasure for the target of wiping verification failure and unsuccessfully identify, then call judgement submodule;
Stop wiping submodule, for stopping applying erasing pulse, finish wiping of current goal erase block.
Cross to wipe and correct module 205, carried out wiping correction for wiping sector for the target of wiping verification succeeds.
In a preferred embodiment of the present invention, described device can also comprise as lower module:
Wipe end module, in the time applying the number of times of erasing pulse and reach maximum preset erasing times, stop applying erasing pulse, finish wiping of current goal erase block.
For device embodiment, because it is substantially similar to embodiment of the method, so description is fairly simple, relevant part is referring to the part explanation of embodiment of the method.
Because device embodiment of the present invention is substantially corresponding to aforesaid embodiment of the method, therefore not detailed part in the description of the present embodiment can, referring to the related description in previous embodiment, just not repeat at this.
Those skilled in the art should understand, embodiments of the invention can be provided as method, system or computer program.Therefore, the present invention can adopt complete hardware implementation example, completely implement software example or the form in conjunction with the embodiment of software and hardware aspect.And the present invention can adopt the form at one or more upper computer programs of implementing of computer-usable storage medium (including but not limited to magnetic disk memory, CD-ROM, optical memory etc.) that wherein include computer usable program code.
The present invention is with reference to describing according to process flow diagram and/or the block scheme of the method for the embodiment of the present invention, equipment (system) and computer program.Should understand can be by the flow process in each flow process in computer program instructions realization flow figure and/or block scheme and/or square frame and process flow diagram and/or block scheme and/or the combination of square frame.Can provide these computer program instructions to the processor of multi-purpose computer, special purpose computer, Embedded Processor or other programmable data processing device to produce a machine, the instruction that makes to carry out by the processor of computing machine or other programmable data processing device produces the device for realizing the function of specifying at flow process of process flow diagram or multiple flow process and/or square frame of block scheme or multiple square frame.
These computer program instructions also can be stored in energy vectoring computer or the computer-readable memory of other programmable data processing device with ad hoc fashion work, the instruction that makes to be stored in this computer-readable memory produces the manufacture that comprises command device, and this command device is realized the function of specifying in flow process of process flow diagram or multiple flow process and/or square frame of block scheme or multiple square frame.
These computer program instructions also can be loaded in computing machine or other programmable data processing device, make to carry out sequence of operations step to produce computer implemented processing on computing machine or other programmable devices, thereby the instruction of carrying out is provided for realizing the step of the function of specifying in flow process of process flow diagram or multiple flow process and/or square frame of block scheme or multiple square frame on computing machine or other programmable devices.
Although described the preferred embodiments of the present invention, once those skilled in the art obtain the basic creative concept of cicada, can make other change and amendment to these embodiment.So claims are intended to be interpreted as comprising preferred embodiment and fall into all changes and the amendment of the scope of the invention.
Finally, also it should be noted that, in this article, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thereby the process, method, article or the equipment that make to comprise a series of key elements not only comprise those key elements, but also comprise other key elements of clearly not listing, or be also included as the intrinsic key element of this process, method, article or equipment.The in the situation that of more restrictions not, the key element being limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment that comprises described key element and also have other identical element.
Method to a kind of non-volatile memory erase provided by the present invention and device are described in detail above, applied specific case herein principle of the present invention and embodiment are set forth, the explanation of above embodiment is just for helping to understand method of the present invention and core concept thereof; , for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention meanwhile.
Claims (10)
1. a method for non-volatile memory erase, is characterized in that, comprising:
Target erase block is carried out to pre-programmed operation; Described target erase block comprises that multiple targets wipe sector;
Wiping sector for described multiple targets through pre-programmed operation applies erasing pulse and wipes;
Multiple targets of wiping for described process are wiped sector and are wiped verification;
If the target of wiping verification failure described in existing is wiped sector, wipe sector for described target of wiping verification failure and apply erasing pulse and continue to wipe, until all targets in described target erase block are wiped sector erasing verification succeeds;
Wipe sector for the target of wiping verification succeeds and carried out wiping correction.
2. method according to claim 1, is characterized in that,, also comprises for wiping through multiple targets of wiping after sector wipes the step of verification described:
Wiping sector assign erasure for the target of wiping verification succeeds successfully identifies;
Wiping sector assign erasure for the target of wiping verification failure unsuccessfully identifies.
3. method according to claim 2, it is characterized in that, exist the target of wiping verification failure to wipe sector if described, wipe sector for described target of wiping verification failure and apply erasing pulse and continue to wipe, comprise until all targets in described target erase block are wiped the step of sector erasing verification succeeds:
Sub-step S1, judges whether to exist the target of wiping unsuccessfully mark to wipe sector, if so, carries out sub-step S2, if not, carries out sub-step S4;
Sub-step S2, wipes sector for the described target with the mark of wiping unsuccessfully and applies erasing pulse and continue to wipe;
Sub-step S3, wipe sector through the target that continues to wipe and wipe verification for described, and wipe sector assign erasure for the target of wiping verification succeeds and successfully identify, wipe sector assign erasure for the target of wiping verification failure and unsuccessfully identify, then return to sub-step S1;
Sub-step S4, stops applying erasing pulse, finishes wiping of current goal erase block.
4. method according to claim 1, is characterized in that, also comprises:
In the time applying the number of times of erasing pulse and reach maximum preset erasing times, stop applying erasing pulse, finish wiping of current goal erase block.
5. method according to claim 1, is characterized in that, describedly wipes the step of verification and comprises for wipe sector through multiple targets of wiping:
Described target is wiped to storage unit in sector to be applied calibration voltage and generates threshold voltage;
Judge that whether described threshold voltage is higher than preset reference voltage;
If so, judge the verification succeeds of wiping of wiping sector for described target;
If not, judge wipe sector for described target wipe verification failure.
6. a device for non-volatile memory erase, is characterized in that, comprising:
Pre-programmed module, for carrying out pre-programmed operation to target erase block; Described target erase block comprises that multiple targets wipe sector;
Wipe module, apply erasing pulse and wipe for wipe sector for described multiple targets through pre-programmed operation;
Wipe correction verification module, wipe sector for multiple targets of wiping for described process and wipe verification;
Wipe judge module, if wipe sector for the target of wiping verification failure described in existence, wipe sector for described target of wiping verification failure and apply erasing pulse and continue to wipe, until all targets in described target erase block are wiped sector erasing verification succeeds;
Cross and wipe correction module, carried out wiping correction for wiping sector for the target of wiping verification succeeds.
7. device according to claim 6, is characterized in that, described wipe correction verification module after, also comprise:
Success identification module, successfully identifies for wiping sector assign erasure for the target of wiping verification succeeds;
Failure identification module, unsuccessfully identifies for wiping sector assign erasure for the target of wiping verification failure.
8. device according to claim 7, is characterized in that, described in wipe judge module and comprise:
Judge submodule, exist the target of wiping unsuccessfully mark to wipe sector for judging whether, if so, call and continue to wipe submodule, if not, call and stop wiping submodule;
Continue to wipe submodule, apply erasing pulse and continue to wipe for the described target with the mark of wiping unsuccessfully being wiped to sector;
Syndrome module, for wiping sector through the target that continues to wipe and wipe verification for described, and wipe sector assign erasure for the target of wiping verification succeeds and successfully identify, wipe sector assign erasure for the target of wiping verification failure and unsuccessfully identify, then call judgement submodule;
Stop wiping submodule, for stopping applying erasing pulse, finish wiping of current goal erase block.
9. device according to claim 6, is characterized in that, also comprises:
Wipe end module, in the time applying the number of times of erasing pulse and reach maximum preset erasing times, stop applying erasing pulse, finish wiping of current goal erase block.
10. device according to claim 6, is characterized in that, described in wipe correction verification module and comprise:
Threshold voltage generates submodule, applies calibration voltage and generates threshold voltage for described target being wiped to sector storage unit;
Threshold voltage judges submodule, for judging that whether described threshold voltage is higher than preset reference voltage;
Verification succeeds submodule, for judging the verification succeeds of wiping of wiping sector for described target;
Verification failure submodule, for judge wipe sector for described target wipe verification failure.
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| CN105489244A (en) * | 2014-10-11 | 2016-04-13 | 北京兆易创新科技股份有限公司 | Erasing method of nonvolatile storage |
| CN105575427A (en) * | 2014-10-11 | 2016-05-11 | 北京兆易创新科技股份有限公司 | Erasing method of nonvolatile memory |
| CN105575430A (en) * | 2014-10-11 | 2016-05-11 | 北京兆易创新科技股份有限公司 | Erasing method of nonvolatile memory |
| CN106057246A (en) * | 2016-06-03 | 2016-10-26 | 北京兆易创新科技股份有限公司 | Method for replacing defective pixel units in non-volatile memory |
| CN106293538A (en) * | 2016-08-17 | 2017-01-04 | 武汉新芯集成电路制造有限公司 | The method for deleting of memorizer |
| CN109960468A (en) * | 2019-01-29 | 2019-07-02 | 华中科技大学 | A method and system for erasing non-volatile memory cells with verification function |
| CN110244972A (en) * | 2019-06-20 | 2019-09-17 | 阳光电源股份有限公司 | A kind of controller method for refreshing and diagnostic device |
| CN111240587A (en) * | 2019-12-30 | 2020-06-05 | 深圳市芯天下技术有限公司 | Erasing method and device of nonvolatile memory |
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