CN105428299B - A kind of production method of deep groove isolation structure - Google Patents
A kind of production method of deep groove isolation structure Download PDFInfo
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- CN105428299B CN105428299B CN201410417668.6A CN201410417668A CN105428299B CN 105428299 B CN105428299 B CN 105428299B CN 201410417668 A CN201410417668 A CN 201410417668A CN 105428299 B CN105428299 B CN 105428299B
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- 238000002955 isolation Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 114
- 229920005591 polysilicon Polymers 0.000 claims abstract description 111
- 238000005530 etching Methods 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 31
- 238000000137 annealing Methods 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 4
- 230000004927 fusion Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 40
- 230000000694 effects Effects 0.000 description 11
- 230000008901 benefit Effects 0.000 description 6
- 238000011049 filling Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- -1 SOI Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The present invention provides a kind of production method of deep groove isolation structure, at least includes the following steps: S1: providing a substrate, forms at least one deep trouth in the substrate, and fill up polysilicon in the deep trouth；S2: being annealed so that the grain structure of the polysilicon recombinates；S3: Cl is used2The polysilicon carve as etching gas with the mixed gas of HBr, removes polysilicon extra outside the deep trouth；S4: SF is used6Over etching is carried out to the polysilicon as etching gas, flat polysilicon surface is obtained at the top of the deep trouth.The present invention can not only improve inside deep trouth and the polysilicon seam phenomenon on surface, improve polysilicon degree of fusion, the over etching amount that polysilicon is reduced while the polysilicon surface of flat-satin can be obtained at the top of the deep trouth simultaneously, reduces the sinking degree at the top of deep trouth.
Description
Technical field
The invention belongs to field of semiconductor manufacture, are related to a kind of production method of deep groove isolation structure.
Background technique
Deep trench isolation technology refers to carves the groove that depth is greater than 3 microns between device, using silica or polycrystalline
Silicon backfill, is allowed to planarize with chemical mechanical grinding (CMP).The advantages of deep trench isolation, has: 1) reducing device area；2) reduce
Parasitic capacitance between emitter-substrate；3) increase the breakdown voltage between bipolar transistor collector.The disadvantage is that technique is multiple
It is miscellaneous, higher cost.
It is applied in many particular devices with the development of science and technology, deep trench isolation technology is more and more, as cmos image passes
In sensor, bipolar junction transistor (BJT) and power device, as the isolation structure between adjacent cells in device, usually
It is filled in deep trouth using polysilicon.
Currently, the extra polysilicon of carving technology removal crystal column surface is generallyd use back, but it is difficult be not lost excessively
Flat surface is obtained in the case where polysilicon at the top of deep trouth.Fig. 1 a to Fig. 1 e shows the shape of existing deep groove isolation structure
At process, wherein Fig. 1 a is shown as forming scanning electron microscope (SEM) figure of deep trouth in wafer by etching；Fig. 1 b is aobvious
It is shown as filling the SEM figure after polysilicon in deep trouth, there is extra polysilicon outside deep trouth；Fig. 1 c is shown as dotted line in Fig. 1 b
The enlarged drawing of part shown in frame, it is seen that seam (Seam) phenomenon occurs in the polysilicon surface above deep trouth；Fig. 1 d is shown as logical
It crosses back after carving polysilicon extra outside removal deep trouth, occurs seam at the top of deep trouth and (sink) phenomenon of sinking；Fig. 1 e is shown as
The enlarged drawing of part shown in dotted line frame in Fig. 1 d, it is seen that it is very uneven at the top of deep trouth, subsequent process flow will be generated not
Good influence reduces device performance.
Therefore it provides a kind of production method of new deep groove isolation structure is necessary with solving the above problems.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of production of deep groove isolation structure
There is serious seam and sink existing in method, the deep groove isolation structure top polysilicon silicon face for solving to make in the prior art
As uneven surface is easy the problem of causing adverse effect, deterioration device performance to subsequent process flow.
In order to achieve the above objects and other related objects, the present invention provides a kind of production method of deep groove isolation structure, until
Less the following steps are included:
S1: a substrate is provided, forms at least one deep trouth in the substrate, and fill up polysilicon in the deep trouth；
S2: being annealed so that the grain structure of the polysilicon recombinates；
S3: Cl is used2The polysilicon carve as etching gas with the mixed gas of HBr, removes the depth
Extra polysilicon outside slot；
S4: SF is used6Over etching is carried out to the polysilicon as etching gas, is obtained at the top of the deep trouth flat
Polysilicon surface.
Optionally, in the step S2, annealing region is 700~900 DEG C, and annealing time is 10~60 minutes.
Optionally, in the step S2, anneal by tube furnace or be annealed using quick thermal annealing method.
Optionally, in the step S3 and step S4, quarter and over etching are returned in same etching machine to the polysilicon
Substep carries out in the same reaction cavity of platform.
Optionally, in the step S3 and step S4, quarter and over etching are returned in different etchings to the polysilicon
It is successively carried out on board.
Optionally, the depth of the deep trouth is greater than or equal to 3 microns.
Optionally, in the step S4, the time range of over etching is 5~20 seconds.
As described above, the production method of deep groove isolation structure of the invention, has the advantages that 1) present invention is in depth
Polysilicon is filled in slot and has carried out a high-temperature annealing step later, so that polysilicon grain recombinates, is conducive to more in deep trouth
Crystal silicon further fuses, and improves the polysilicon seam phenomenon on deep trouth inside and surface, improves polysilicon degree of fusion；2) of the invention
Polysilicon after polysilicon is filled returns quarter process and is divided into main etching part and over etching part, and wherein main etching part uses
Cl2For mixed gas with HBr as etching gas, effect is polysilicon extra outside the removal deep trouth；Over etching part
Using SF6As etching gas, on the other hand on the one hand it is at the top of the deep trouth that effect is to avoid etching polysilicon insufficient
Obtain the polysilicon surface of flat-satin；3) compared with the prior art, the present invention obtains flat-satin at the top of the deep trouth
The over etching amount of polysilicon can be reduced while polysilicon surface, reduce the sinking degree at the top of deep trouth；4) using the present invention
Method production deep groove isolation structure can be widely applied to imaging sensor, bipolar junction transistor, power device etc., mention
High device performance.
Detailed description of the invention
Fig. 1 a~Fig. 1 e is shown as the forming process of deep groove isolation structure in the prior art.
Fig. 2 is shown as the process flow chart of the production method of deep groove isolation structure of the invention.
Fig. 3 is shown as forming showing at least one deep trouth in the production method of deep groove isolation structure of the invention in the substrate
It is intended to.
Fig. 4 is shown as filling up the schematic diagram of polysilicon in the production method of deep groove isolation structure of the invention in deep trouth.
Fig. 5 is shown as in the production method of deep groove isolation structure of the invention carrying out back carving to polysilicon more outside removal deep trouth
The schematic diagram of remaining polysilicon.
Fig. 6 is shown as in the production method of deep groove isolation structure of the invention carrying out over etching at the top of deep trouth to polysilicon
Obtain the schematic diagram of flat polysilicon surface.
Fig. 7 a~Fig. 7 c is shown as Cl in the case where not annealed2With HBr as etching gas and to polysilicon point
SEM figure at the top of deep trouth at other over etching 20 seconds, 10 seconds, 0 second.
Fig. 8 a~Fig. 8 c is shown as Cl after 800 DEG C of annealing2With HBr as etching gas and to polysilicon, mistake is carved respectively
SEM figure at the top of deep trouth at erosion 20 seconds, 10 seconds, 5 seconds.
Fig. 9 a~Fig. 9 c is shown as Cl after 800 DEG C of annealing2With HBr as main etching gas, by SF6As over etching gas
Body, and respectively to polysilicon over etching 20 seconds, 10 seconds, 5 seconds when deep trouth at the top of SEM figure.
Component label instructions
S1~S4 step
1 substrate
2 deep trouths
3 polysilicons
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to Fig. 2 to Fig. 9 c.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
The present invention provides a kind of production method of deep groove isolation structure, referring to Fig. 2, being shown as the process flow of this method
Figure, at least includes the following steps:
Step S1: a substrate is provided, forms at least one deep trouth in the substrate, and fill up polycrystalline in the deep trouth
Silicon；
Step S2: being annealed so that the grain structure of the polysilicon recombinates；
Step S3: Cl is used2The polysilicon carve as etching gas with the mixed gas of HBr, removes institute
State polysilicon extra outside deep trouth；
Step S4: SF is used6Over etching is carried out to the polysilicon as etching gas, is put down at the top of the deep trouth
Smooth polysilicon surface.
Referring initially to Fig. 3 and Fig. 4, step S1 is executed: a substrate 1 being provided, forms at least one depth in the substrate 1
Slot 2, and polysilicon 3 is filled up in the deep trouth 2.
Specifically, the substrate 1 includes but is not limited to the conventional semiconductors substrates such as Si, Ge, SiGe, SOI, sapphire, this
In embodiment, the substrate 1 is by taking Si as an example.
The depth of the deep trouth is greater than or equal to 3 microns, in the present embodiment, preferably 3~5 microns.In the substrate 1
The method for forming deep trouth 2 are as follows: be then coated with photoresist as mask layer in the 1 surface deposit passivation layer of substrate first and go forward side by side
Row exposure development defines deep slot pattern, then etching mask layer forms etching window and removes part using deep etching technique
Substrate forms the deep trouth 2.The reactive ion etching skill with anisotropic etch can be used in the deep etching technique
Art (RIE) or Bosch technique alternately etch.Cryo-etching can also be used, by taking Si substrate as an example, at 100 DEG C or so, by anti-
Answer gas SF6And O2Si is performed etching under action of plasma, under the bombardment of ion, the etch rate of side wall is slower, and
The etch rate of vertical direction remains unchanged, to meet preferable anisotropy.
The method of polysilicon 3 is filled in the deep trouth 2 are as follows: in the substrate surface deposit polycrystalline silicon 3, and in high temperature item
It flows back under part, the polysilicon 3 is enabled to be filled up completely the completely described deep trouth 2.Due to the deep trouth 2 depth-to-width ratio compared with
Greatly, wherein the polysilicon 3 filled has seam (seam) effect (reference can be made to Fig. 1 c), i.e., polysilicon at the top of deep trouth, which is formed, falls three
Angular notch is the result flowed into due to polysilicon from deep trouth two sides.In fact, not only at the top of deep trouth, in deep trouth
Polysilicon may also exist because of seam effect and connect not close phenomenon.
Therefore it then executes step S2: being annealed so that the grain structure of the polysilicon 3 recombinates.
Specifically, can carry out annealing by tube furnace or be annealed using the methods of rapid thermal annealing.Wherein, tube furnace
The characteristics of annealing is that heating rate and rate of temperature fall are slow, and heating-up time and temperature fall time are or so 1~2 hour,
But the advantages of tube annealing be can mass disposal wafer, such as once can simultaneously anneal to 150 wafers；Fast speed heat is moved back
The method of fire is primary only to anneal to wafer, advantage be heating rate and rate of temperature fall quickly.
Specifically, annealing region is 700~900 DEG C, annealing time is 10~60 minutes.In the present embodiment, annealing
Temperature preferably uses 800 DEG C, and annealing time is 20~30 minutes.
This step has carried out a high-temperature annealing step after filling polysilicon in deep trouth, so that polysilicon grain weight
Group, the polysilicon be conducive in deep trouth further fuse, and improve the polysilicon seam phenomenon on deep trouth inside and surface, improve polycrystalline
Silicon degree of fusion.
Again referring to Fig. 5, executing step S3: using Cl2With the mixed gas of HBr as etching gas to the polysilicon
3 carve, and remove polysilicon extra outside the deep trouth.
The purpose for carrying out back carving after deposit polycrystalline silicon is to remove polysilicon extra outside deep trouth and planarization.This
Step mainly removes polysilicon extra outside the deep trouth as the entire main etch step returned during carving.In this step
Using dry etching, and utilize Cl2Mixed gas with HBr is suitble to the polysilicon selective of large area to carve as etching gas
Erosion.
Finally referring to Fig. 6, executing step S4: using SF6Over etching is carried out to the polysilicon as etching gas,
Flat polysilicon surface is obtained at the top of the deep trouth.
Compared to Cl2+ HBr, SF6This fluoride gas can generate more polymer to be formed more to etched surface
Good protective effect.Due to SF6Polymer is easy to produce in etching process, these polymer are in prolonged etching process
Polysilicon surface can be largely gathered in and connect into small sheet resist layer, so as to form the non-selective etch to polysilicon.
Therefore, during large area polysilicon selective etch in step s3, it is not suitable for selecting SF6As main etching gas.Phase
Instead, this step uses SF to the over etching of polysilicon in the process6As over etching gas, it can not only prevent etching insufficient
The problem of (under etch), polysilicon surface can also be repaired, the polysilicon table of flat-satin is obtained at the top of the deep trouth
Face can also mitigate deep trouth top polysilicon silicon sinking (sink) degree, prevent at the top of deep trouth simultaneously because polymer aggregational acts on
Polysilicon consumption it is excessive.
Specifically, using SF in this step6The time range for carrying out over etching to the polysilicon as etching gas is 5
~20 seconds, preferably 10 seconds.Meanwhile the over etching of the Hui Keyu of the step S3 this step can in same etching machine bench
Substep carries out in same reaction cavity, as two steps in same technique formula, utilizes the different gas circuits point of same equipment
It Gong Ying not Cl2+ HBr gas and Cl2+ HBr gas.Certainly, the over etching of this step of the Hui Keyu of the step S3 can also be not
It is successively carried out on same etching machine bench, different technique formulas is respectively adopted.
It should be pointed out that using Cl in the step S32+ HBr uses SF as main etching gas, step S46As mistake
While etching gas, other inert gases such as nitrogen, argon gas etc. can be passed through, effect is to adjust the intracorporal air pressure of reaction chamber,
It should not excessively limit the scope of the invention herein.
In order to verify deep groove isolation structure of the invention production method effect, done following three groups of contrast tests:
(1) Fig. 7 a~Fig. 7 c is please referred to, it, will in the case where being respectively indicated as not annealed after filling polysilicon in deep trouth
Cl2Carve as main etching gas and over etching gas with HBr, when the over etching time is respectively 20 seconds, 10 seconds, 0 second
SEM slice map at the top of deep trouth.As it can be seen that there is seam phenomenon (Fig. 7 c) at the top of deep trouth, with mistake when main etching process finishes
The extension of etch period, deep trouth top polysilicon silicon sinking degree increase, and seam phenomenon also becomes apparent (Fig. 7 a and Fig. 7 b).
(2) Fig. 8 a~Fig. 8 c is please referred to, is respectively indicated as filling in deep trouth after polysilicon and the case where through 800 DEG C of annealing
Under, by Cl2Carve as main etching gas and over etching gas with HBr, the over etching time is respectively 20 seconds, 10 seconds, 5 seconds
When deep trouth at the top of SEM slice map.As it can be seen that it is existing to joined the polysilicon seam that annealing steps can be obviously improved at the top of deep trouth
As, but by Cl2With HBr as over etching gas, so that the polysilicon surface at the top of deep trouth seems coarse, effect is still not enough managed
Think.
(3) Fig. 9 a~Fig. 9 c is please referred to, is respectively indicated as filling in deep trouth after polysilicon and the case where through 800 DEG C of annealing
Under, by Cl2With HBr as main etching gas, by SF6As over etching gas, the over etching time is respectively 20 seconds, 10 seconds, 5 seconds
When deep trouth at the top of SEM slice map.As it can be seen that joined annealing steps and by over etching gas by Cl2+ HBr replaces with SF6, no
The polysilicon seam phenomenon at the top of deep trouth can be only significantly improved, the deep trouth top polysilicon silicon table of flat-satin can also be obtained
Face, meanwhile, under the identical over etching time, the polysilicon amount of consumption is relatively fewer, can reach within over etching 10 seconds ideal
Polysilicon surface (Fig. 9 b).
These results suggest that the production method of deep groove isolation structure of the invention can achieve the polycrystalline improved at the top of deep trouth
The purpose of silicon seam phenomenon, and polysilicon sinking degree is reduced, the polysilicon surface of flat-satin is obtained, is established for subsequent technique
Device performance is improved on good basis.
In conclusion the production method of deep groove isolation structure of the invention, has the advantages that 1) present invention is in depth
Polysilicon is filled in slot and has carried out a high-temperature annealing step later, so that polysilicon grain recombinates, is conducive to more in deep trouth
Crystal silicon further fuses, and improves the polysilicon seam phenomenon on deep trouth inside and surface, improves polysilicon degree of fusion；2) of the invention
Polysilicon after polysilicon is filled returns quarter process and is divided into main etching part and over etching part, and wherein main etching part uses
Cl2For mixed gas with HBr as etching gas, effect is polysilicon extra outside the removal deep trouth；Over etching part
Using SF6As etching gas, on the other hand on the one hand it is at the top of the deep trouth that effect is to avoid etching polysilicon insufficient
Obtain the polysilicon surface of flat-satin；3) compared with the prior art, the present invention obtains flat-satin at the top of the deep trouth
The over etching amount of polysilicon can be reduced while polysilicon surface, reduce the sinking degree at the top of deep trouth；4) using the present invention
Method production deep groove isolation structure can be widely applied to imaging sensor, bipolar junction transistor, power device etc., mention
High device performance.So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (7)
1. a kind of production method of deep groove isolation structure, which is characterized in that at least include the following steps:
S1: a substrate is provided, forms at least one deep trouth in the substrate, and fill up polysilicon in the deep trouth；
S2: being annealed so that the grain structure of the polysilicon recombinates；
S3: Cl is used2The polysilicon carve as etching gas with the mixed gas of HBr, is removed more outside the deep trouth
Remaining polysilicon；
S4: SF is used6Over etching is carried out to the polysilicon as etching gas, flat polycrystalline is obtained at the top of the deep trouth
Silicon face, simultaneously because SF6The aggtegation of the polymer generated in etching process reduces the over etching amount of polysilicon, subtracts
Polysilicon sinking degree at the top of few deep trouth.
2. the production method of deep groove isolation structure according to claim 1, it is characterised in that: in the step S2, move back
Fiery temperature range is 700~900 DEG C, and annealing time is 10~60 minutes.
3. the production method of deep groove isolation structure according to claim 1, it is characterised in that: in the step S2, lead to
Tube furnace is crossed anneal or anneal using quick thermal annealing method.
4. the production method of deep groove isolation structure according to claim 1, it is characterised in that: in the step S3 and step
In S4, time quarter of the polysilicon and over etching are carried out step by step in the same reaction cavity of same etching machine bench.
5. the production method of deep groove isolation structure according to claim 1, it is characterised in that: in the step S3 and step
In S4, time quarter of the polysilicon and over etching are successively carried out on different etching machine bench.
6. the production method of deep groove isolation structure according to claim 1, it is characterised in that: the depth of the deep trouth is greater than
Or it is equal to 3 microns.
7. the production method of deep groove isolation structure according to claim 1, it is characterised in that: in the step S4, mistake
The time range of etching is 5~20 seconds.
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| CN107910260A (en) * | 2017-11-14 | 2018-04-13 | 扬州扬杰电子科技股份有限公司 | A kind of polysilicon returns carving method |
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