CN105336568A - Rapid annealing method of power device and the power device - Google Patents
Rapid annealing method of power device and the power device Download PDFInfo
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Abstract
本发明提供了一种功率器件快速退火方法和一种功率器件，其中，所述功率器件快速退火方法，包括：在所述功率器件的第一面淀积金属层之后，在所述金属层上淀积保护层；在所述第二面进行离子注入，并对所述第二面进行热退火处理，激活注入的离子；在所述第二面淀积金属层，清除所述第一面上的保护层。本发明的技术方案通过在功率器件的第一面制作工艺完成后，在功率器件的第一面上淀积保护层，实现了在退火过程中对功率器件第一面上制作工艺的保护，提高了功率器件的性能，同时使用常规退火处理，降低了制造成本。
The present invention provides a rapid annealing method for a power device and a power device, wherein the rapid annealing method for a power device includes: after depositing a metal layer on the first surface of the power device, depositing a metal layer on the metal layer Depositing a protective layer; performing ion implantation on the second surface, and performing thermal annealing on the second surface to activate the implanted ions; depositing a metal layer on the second surface, cleaning the first surface protective layer. The technical scheme of the present invention realizes the protection of the fabrication process on the first surface of the power device during the annealing process by depositing a protective layer on the first surface of the power device after the fabrication process of the first surface of the power device is completed, and improves The performance of the power device is improved, and the manufacturing cost is reduced by using conventional annealing treatment.
Description
技术领域technical field
本发明涉及半导体器件及其工艺制造技术领域，具体而言，涉及一种功率器件快速退火方法和一种功率器件。The invention relates to the technical field of semiconductor devices and their manufacturing techniques, in particular to a rapid annealing method for a power device and a power device.
背景技术Background technique
在制作功率器件的过程中，在完成硅晶片正面工艺后，为了在功率器件的背面形成发射极和减小接触电阻，常常需要对硅晶片进行背面减薄，再进行离子注入，但是在离子注入后，必须对硅晶片进行一次快速热退火，该快速热退火过程可以修复注入离子对功率器件造成的损伤，同时激活注入的离子。但是如果通过传统的快速热退火方法进行热退火处理，将导致功率器件进行正面工艺时在硅晶片正面形成的金属层融化，损坏功率器件的正面工艺，导致功率器件失效，但是如果不进行快速热退火处理，或是快速热退火处理的温度或时间达不到要求，都会导致背面注入的离子无法使用，也即无法形成背面注入区，影响功率器件性能。In the process of making power devices, after completing the front-side process of the silicon wafer, in order to form the emitter on the back of the power device and reduce the contact resistance, it is often necessary to thin the back of the silicon wafer and then perform ion implantation, but in ion implantation Finally, a rapid thermal annealing must be performed on the silicon wafer. This rapid thermal annealing process can repair the damage caused by the implanted ions to the power device and activate the implanted ions at the same time. However, if the thermal annealing treatment is carried out by the traditional rapid thermal annealing method, the metal layer formed on the front side of the silicon wafer will melt when the power device is subjected to the front-side process, which will damage the front-side process of the power device and cause the power device to fail. Annealing, or rapid thermal annealing if the temperature or time does not meet the requirements, will result in the unusable ions implanted in the back, that is, the inability to form a back implanted region, which will affect the performance of power devices.
目前，为了解决该问题采用的方法是使用激光快速热退火设备，实现功率器件背面注入离子激活，由于采用了激光作为热源，该方法可以在功率器件的背面退火温度没有传递到功率器件正面金属层的时候就完成注入离子的激活，采用这种方法对器件的背面进行快速热退火，其退火过程中对功率器件正面金属层的影响将减到最少，其工艺流程如下：At present, the method used to solve this problem is to use laser rapid thermal annealing equipment to realize the activation of implanted ions on the back of the power device. Since the laser is used as the heat source, this method can prevent the annealing temperature from the back of the power device from being transferred to the metal layer on the front of the power device. The activation of the implanted ions is completed when the implanted ions are activated. Using this method to perform rapid thermal annealing on the back of the device, the impact on the front metal layer of the power device will be minimized during the annealing process. The process flow is as follows:
(1)、在完成功率器件正面工艺后，使用酸溶液或混合酸溶液对硅片进行清洗，去除硅片背面的氧化物、硅化物、正面工艺过程中残留的氧气和/或碳氢化合物。(1) After the front-side process of the power device is completed, the silicon wafer is cleaned with an acid solution or a mixed acid solution to remove oxides, silicides on the back of the silicon wafer, and oxygen and/or hydrocarbons remaining during the front-side process.
(2)、刻蚀功率器件的背面，以减小功率器件的厚度。(2) Etching the back side of the power device to reduce the thickness of the power device.
(3)、向功率器件的背面注入离子。(3) Ions are implanted into the back of the power device.
(4)、使用激光快速热退火系统对硅片进行快速热退火处理，激活功率器件背面注入的离子。(4) Use a laser rapid thermal annealing system to perform rapid thermal annealing on the silicon wafer to activate the ions implanted on the back of the power device.
(5)、在功率器件的背面制备金属层，完成功率器件的制作。(5) Prepare a metal layer on the back of the power device to complete the fabrication of the power device.
虽然采用激光快速热退火处理对功率器件背面注入离子激活非常有效，但是由于激光退火设备造价昂贵，使用成本也较普通快速退火设备高，提高了器件的制造成本。同时为了减小对正面金属的影响，激光快速热退火的时间和温度还是会受到限制，也影响到了工艺灵活度，限制了功率器件性能的进一步提升。Although the laser rapid thermal annealing treatment is very effective for the activation of implanted ions on the back of the power device, the laser annealing equipment is expensive and the cost of use is higher than that of ordinary rapid annealing equipment, which increases the manufacturing cost of the device. At the same time, in order to reduce the impact on the front metal, the time and temperature of laser rapid thermal annealing will still be limited, which also affects the process flexibility and limits the further improvement of power device performance.
因此如何在提高功率器件性能的同时降低功率器件的制造成本成为目前亟待解决的技术问题。Therefore, how to reduce the manufacturing cost of the power device while improving the performance of the power device has become a technical problem to be solved urgently.
发明内容Contents of the invention
本发明正是基于上述技术问题至少之一，提出了一种功率器件快速退火方法，通过在功率器件的第一面制作工艺完成后，在功率器件的第一面上淀积保护层，实现了在退火过程中对功率器件第一面上制作工艺的保护，提高了功率器件的性能，同时使用常规退火处理，降低了制造成本。Based on at least one of the above-mentioned technical problems, the present invention proposes a rapid annealing method for a power device, which realizes The protection of the manufacturing process on the first surface of the power device during the annealing process improves the performance of the power device, and at the same time, the conventional annealing treatment reduces the manufacturing cost.
有鉴于此，根据本发明的一个方面，提供了一种功率器件快速退火方法，包括：在所述功率器件的第一面淀积金属层之后，在所述金属层上淀积保护层；在所述第二面进行离子注入，并对所述第二面进行热退火处理，激活注入的离子；在所述第二面淀积金属层，清除所述第一面上的保护层。In view of this, according to one aspect of the present invention, a rapid annealing method for a power device is provided, comprising: after depositing a metal layer on the first surface of the power device, depositing a protective layer on the metal layer; Ion implantation is performed on the second surface, and thermal annealing is performed on the second surface to activate the implanted ions; a metal layer is deposited on the second surface to remove the protective layer on the first surface.
通过在功率器件的第一面淀积金属层之后，也即在完成第一面的制作工艺之后，在金属层上淀积保护层，使得在功率器件的第二面进行离子注入后，进行热退火处理激活注入的离子时，如果第一面的金属层融化，则由于保护层的存在仍然可以保持该金属层原有的形貌，不会导致器件失效，与现有技术中使用激光快速热退火装置相比，无需使用激光快速热退火装置，降低了制造成本，同时，由于保护层的存在，对第一面的金属层形成有效的保护，使得退火的温度和时间不受限制，提高了工艺灵活度，退火的时间和温度可以更好的满足工艺要求，提高了功率器件背面注入的离子的激活率，从而提高了功率器件的性能。By depositing a metal layer on the first side of the power device, that is, after the first side of the manufacturing process is completed, a protective layer is deposited on the metal layer, so that after ion implantation is performed on the second side of the power device, thermal When the annealing treatment activates the implanted ions, if the metal layer on the first surface melts, the original shape of the metal layer can still be maintained due to the existence of the protective layer, which will not cause device failure. Compared with the annealing device, there is no need to use a laser rapid thermal annealing device, which reduces the manufacturing cost. At the same time, due to the existence of the protective layer, the metal layer on the first surface is effectively protected, so that the annealing temperature and time are not limited, and the Process flexibility, annealing time and temperature can better meet the process requirements, improve the activation rate of ions implanted on the back of the power device, thereby improving the performance of the power device.
根据本发明的另一方面，还提供了一种功率器件，所述功率器件采用如上述任一技术方案所述的功率器件快速退火方法进行快速退火。According to another aspect of the present invention, a power device is also provided, and the power device is rapidly annealed by using the rapid annealing method for a power device described in any of the above technical solutions.
附图说明Description of drawings
图1示出了根据本发明的实施例的功率器件快速退火方法的示意流程图。FIG. 1 shows a schematic flowchart of a rapid annealing method for a power device according to an embodiment of the present invention.
具体实施方式detailed description
为了能够更清楚地理解本发明的上述目的、特征和优点，下面结合附图和具体实施方式对本发明进行进一步的详细描述。需要说明的是，在不冲突的情况下，本申请的实施例及实施例中的特征可以相互组合。In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that, in the case of no conflict, the embodiments of the present application and the features in the embodiments can be combined with each other.
在下面的描述中阐述了很多具体细节以便于充分理解本发明，但是，本发明还可以采用其他不同于在此描述的其他方式来实施，因此，本发明并不限于下面公开的具体实施例的限制。In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, therefore, the present invention is not limited to the specific embodiments disclosed below limit.
图1示出了根据本发明的实施例的功率器件快速退火方法的示意流程图。FIG. 1 shows a schematic flowchart of a rapid annealing method for a power device according to an embodiment of the present invention.
如图1所示，根据本发明的实施例的功率器件快速退火方法，包括：步骤102，在所述功率器件的第一面淀积金属层之后，在所述金属层上淀积保护层；步骤104，在所述第二面进行离子注入，并对所述第二面进行热退火处理，激活注入的离子；步骤106，在所述第二面淀积金属层，清除所述第一面上的保护层。As shown in FIG. 1, the rapid annealing method for a power device according to an embodiment of the present invention includes: Step 102, after depositing a metal layer on the first surface of the power device, depositing a protective layer on the metal layer; Step 104, perform ion implantation on the second surface, and perform thermal annealing on the second surface to activate the implanted ions; step 106, deposit a metal layer on the second surface, and remove the first surface protective layer on top.
通过在功率器件的第一面淀积金属层之后，也即在完成第一面的制作工艺之后，在金属层上淀积保护层，使得在功率器件的第二面进行离子注入后，进行热退火处理激活注入的离子时，如果第一面的金属层融化，则由于保护层的存在仍然可以保持该金属层原有的形貌，不会导致器件失效，与现有技术中使用激光快速热退火装置相比，无需使用激光快速热退火装置，降低了制造成本，同时，由于保护层的存在，对第一面的金属层形成有效的保护，使得退火的温度和时间不受限制，提高了工艺灵活度，退火的时间和温度可以更好的满足工艺要求，提高了功率器件背面注入的离子的激活率，从而提高了功率器件的性能。By depositing a metal layer on the first side of the power device, that is, after the first side of the manufacturing process is completed, a protective layer is deposited on the metal layer, so that after ion implantation is performed on the second side of the power device, thermal When the annealing treatment activates the implanted ions, if the metal layer on the first surface melts, the original shape of the metal layer can still be maintained due to the existence of the protective layer, which will not cause device failure. Compared with the annealing device, there is no need to use a laser rapid thermal annealing device, which reduces the manufacturing cost. At the same time, due to the existence of the protective layer, the metal layer on the first surface is effectively protected, so that the annealing temperature and time are not limited, and the Process flexibility, annealing time and temperature can better meet the process requirements, improve the activation rate of ions implanted on the back of the power device, thereby improving the performance of the power device.
在上述技术方案中，优选地，所述保护层为氧化硅或氮化硅或多晶硅。In the above technical solution, preferably, the protective layer is silicon oxide or silicon nitride or polysilicon.
在该技术方案中，由于在功率器件的第一面制作工艺完成后，在功率器件的第一面上淀积保护层主要是为了在功率器件的第二面注入离子之后，在对功率器件的第二面退火处理时，保护第一面上的金属层在融化时不变形，因此，保护层需要耐高温，而且不与金属层中的金属发生化学反应，在第二面的离子激活完成时，保护层需要容易清除。作为较为优选的实施例，可以使用氧化硅或氮化硅或多晶硅作为保护层材料。In this technical solution, since the first surface of the power device is fabricated, the protective layer is deposited on the first surface of the power device mainly for the purpose of implanting ions on the second surface of the power device and protecting the power device During the annealing treatment of the second side, the metal layer on the first side is protected from deformation during melting. Therefore, the protective layer needs to be resistant to high temperature and does not chemically react with the metal in the metal layer. When the ion activation on the second side is completed , the protective layer needs to be easily removed. As a more preferred embodiment, silicon oxide or silicon nitride or polysilicon can be used as the protective layer material.
在上述技术方案中，优选地，所述保护层的厚度为1μm至10μm。In the above technical solution, preferably, the protective layer has a thickness of 1 μm to 10 μm.
在上述技术方案中，优选地，所述热退火处理的热源采用灯光辐射，且单面或双面加热所述功率器件。In the above technical solution, preferably, the heat source of the thermal annealing treatment adopts lamp radiation, and heats the power device on one or both sides.
在该技术方案中，通过使用灯光辐射作为热退火处理的热源，与现有技术中使用激光作为热源相比，降低了制造成本，同时，在热退火处理过程中，可以采用单面或双面加热功率器件，以提高注入离子的激活率，单点或多点进行测温，以控制功率器件各点的温度，提高功率器件的性能。In this technical solution, by using lamp radiation as the heat source for thermal annealing, compared with the prior art using laser as a heat source, the manufacturing cost is reduced. At the same time, in the process of thermal annealing, single-sided or double-sided Heating the power device to increase the activation rate of implanted ions, and measuring the temperature at one or more points to control the temperature of each point of the power device and improve the performance of the power device.
在上述技术方案中，优选地，所述在所述第二面进行离子注入之前且在淀积所述保护层之后，刻蚀所述功率器件的第二面，以减小所述功率器件的厚度。In the above technical solution, preferably, before performing ion implantation on the second surface and after depositing the protection layer, the second surface of the power device is etched to reduce the thickness.
在该技术方案中，通过在功率器件的第二面注入离子之前，刻蚀功率器件的第二面，减小功率器件的厚度，使得向功率器件的第二面注入离子时，注入的离子可以更加均匀的分布在功率器件的第二面，同时在退火处理时，更加容易激活注入的离子，提高注入离子的激活率，从而提高功率器件的性能。In this technical solution, the thickness of the power device is reduced by etching the second face of the power device before implanting ions into the second face of the power device, so that when ions are implanted into the second face of the power device, the implanted ions can It is more evenly distributed on the second surface of the power device, and at the same time, it is easier to activate the implanted ions during the annealing process, increasing the activation rate of the implanted ions, thereby improving the performance of the power device.
在上述技术方案中，优选地，在所述刻蚀所述功率器件的第二面之前且在淀积所述保护层之后，还包括：清洗所述功率器件。In the above technical solution, preferably, before etching the second surface of the power device and after depositing the protection layer, further comprising: cleaning the power device.
在该技术方案中，由于微量的污染也可能导致功率器件的失效，因此，功率器件在制造过程中，功率器件必须经过严格的清洗，清洗主要是清洗功率器件的表面污染杂质，包括有机物和无机物，清洗方法有物理清洗和化学清洗，在刻蚀功率器件的第二面之前，对功率器件进行清洗，以提高功率器件的成品率，避免因微量的污染导致功率器件失效。In this technical solution, since a small amount of pollution may also cause the failure of the power device, the power device must be strictly cleaned during the manufacturing process of the power device. The cleaning is mainly to clean the surface contamination impurities of the power device, including organic and inorganic substances. The cleaning methods include physical cleaning and chemical cleaning. Before etching the second side of the power device, the power device is cleaned to improve the yield of the power device and avoid failure of the power device due to trace pollution.
在上述技术方案中，优选地，所述清洗所述功率器件具体为：使用酸溶液或混合酸溶液对所述功率器件进行清洗。In the above technical solution, preferably, the cleaning of the power device specifically includes: cleaning the power device with an acid solution or a mixed acid solution.
在该技术方案中，使用酸溶液或混合酸溶液对功率器件进行清洗，去除功率器件第二面上的氧化物、硅化物以及第一面制作工艺过程中残留的氧气和/或碳氢化合物，以保证功率器件表面的无污染，提高功率器件的成品率。其中，酸溶液可以是硝酸和/或硫酸。In this technical solution, the power device is cleaned with an acid solution or a mixed acid solution to remove oxides, silicides on the second side of the power device, and oxygen and/or hydrocarbons remaining during the manufacturing process of the first side, In order to ensure the pollution-free surface of the power device and improve the yield of the power device. Wherein, the acid solution may be nitric acid and/or sulfuric acid.
下面结合具体的实施例详细说明本发明的实施例的功率器件快速退火方法，具体来说，本发明的实施例的功率器件快速退火方法的具体步骤为：The following describes the rapid annealing method for power devices according to the embodiments of the present invention in detail in conjunction with specific embodiments. Specifically, the specific steps of the rapid annealing method for power devices according to the embodiments of the present invention are:
步骤1，在完成功率器件正面(相当于功率器件的第一面)工艺后，在硅片正面的金属层上淀积钝化材料保护层。Step 1, after finishing the process on the front side of the power device (equivalent to the first side of the power device), deposit a protective layer of passivation material on the metal layer on the front side of the silicon wafer.
步骤2，使用酸溶液或混合酸溶液对硅片进行清洗，去除背面的氧化物、硅化物、正面工艺过程中残留的氧气和/或碳氢化合物。In step 2, the silicon wafer is cleaned with an acid solution or a mixed acid solution to remove oxides, silicides on the back side, and oxygen and/or hydrocarbons remaining during the front side process.
步骤3，刻蚀硅片的背面(相当于功率器件的第二面)，以减小功率器件的厚度。Step 3, etching the back side of the silicon wafer (equivalent to the second side of the power device), so as to reduce the thickness of the power device.
步骤4，向功率器件的背面注入离子。Step 4, implanting ions into the back of the power device.
步骤5，使用常规快速热退火系统对硅片进行快速热退火处理，激活功率器件背面注入的离子。Step 5, using a conventional rapid thermal annealing system to perform rapid thermal annealing on the silicon wafer to activate the ions implanted on the back of the power device.
步骤6，在功率器件的背面淀积金属层。Step 6, depositing a metal layer on the back of the power device.
步骤7，去除功率器件正面的钝化材料保护层，完成功率器件的制作。Step 7, removing the protective layer of passivation material on the front of the power device to complete the fabrication of the power device.
根据本发明的实施例的功率器件采用如上述任一技术方案所述的功率器件快速退火方法进行快速退火。The power device according to the embodiment of the present invention performs rapid annealing using the rapid annealing method for a power device described in any of the above technical solutions.
根据本发明的功率器件，在功率器件的制作过程中通过在功率器件的第一面制作工艺完成后，在功率器件的第一面上淀积保护层，实现了在退火过程中对功率器件第一面上制作工艺的保护，提高了功率器件的性能，同时使用常规退火处理，降低了制造成本。According to the power device of the present invention, in the manufacturing process of the power device, after the manufacturing process on the first surface of the power device is completed, a protective layer is deposited on the first surface of the power device, so that the first surface of the power device can be protected during the annealing process. On the one hand, the protection of the manufacturing process improves the performance of the power device, and at the same time, the conventional annealing treatment is used to reduce the manufacturing cost.
以上仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。The above are only preferred embodiments of the present invention, and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.
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