CN105204300A - Photoetching development method for manufacturing light emitting diode - Google Patents
Photoetching development method for manufacturing light emitting diode Download PDFInfo
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- CN105204300A CN105204300A CN201510551842.0A CN201510551842A CN105204300A CN 105204300 A CN105204300 A CN 105204300A CN 201510551842 A CN201510551842 A CN 201510551842A CN 105204300 A CN105204300 A CN 105204300A
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Abstract
The invention discloses a photoetching development method for manufacturing a light emitting diode. The photoetching development method is characterized by comprising the steps that pollutants on the surface of an LED chip are cleaned; a developmet solution is added in advance; step-by-step development is conducted for gradually shortening the development time, reducing the development solution amount and lowering the development rotation speed, wherein the total development time is T, the development time at each time is T1, T2, ......, T<n-1>, T <n>, T =T1+T2+...+T<n-1>+T<n>, T1 is larger than T2, T2 is larger than T3, and the rest can be;conducted in the same manner till T<n-1> is larger than T<n>; the development solution amount added at each time of development is V1, V2, ......, V<n-1>, V<n>, V1 is larger than V2, V2 is larger than V3, and the rest can be conducted in the same manner till V<n-1> is larger than V<n>; the development rotation speed of each time of development is R1, R2, ......, R<n-1>, R<n>, R1 is larger than R2, R2 is larger than R3, the rest can be conducted in the same manner till R<n-1> is larger than R<n>, n is a positive integer which is larger than or equal to 2. The photoetching development method can solve the residue problem of stripped degumming gelatin silks and increase the brightness of an LED.
Description
Technical field
The application relates to the making of light emitting diode, more specifically, relates to a kind of photoetching development method for making light emitting diode.
Background technology
Light emitting diode (Light ~ EmittingDiode is called for short LED) is a kind of is the semi-conductor electronic device of luminous energy by electric energy conversion.This electronic component occurred as far back as 1962, and can only send the ruddiness of low luminosity in early days, develop other monochromatic versions afterwards, the light that can send even to this day is throughout visible ray, infrared ray and ultraviolet, and luminosity also brings up to suitable luminosity.Along with the continuous progress of technology, purposes is also widely used in display, televisor daylighting decoration and illumination by developing into as pilot lamp, display board etc. at the beginning.
The production process that current LED light is carved mainly contains five steps such as even glue, soft roasting, exposure, hard roasting, development.Photoresist also known as photoresist, the photosensitive mixing material be made up of photosensitive resin, sensitizer and solvent three kinds of principal ingredients.According to its chemical reaction mechanism and development principle, photoresist can divide negative photoresist and positive photoresist two class.What form insoluble material after illumination is negative photoresist; Otherwise be insoluble to some solvent, what become soluble substance after illumination is positive photoresist.In the manufacturing process of LED electrical pole, the general negative photoresist that uses does photoetching, and be coated on by photoresist on epitaxial wafer, production process comprises: 1) negative glue does photoetching; 2) vacuum evaporation metal; 3) stripping is removed photoresist.
Existing photoetching development method generally adopts disposable development, and as shown in Figure 1, bottom the litho pattern after development, pattern can obviously fall in inside.This can remain a certain proportion of collodion silk when stripping first can be caused to remove photoresist; Secondly evaporation trapezoidal shape electrode base is out much wider than top, and this can reduce LED luminance.
In view of this, the invention provides a kind of newly for making the photoetching development method of light emitting diode to solve the problem.
Summary of the invention
This application discloses a kind of photoetching development method for making light emitting diode, it is characterized in that, comprise: cleaning LED chip surface contaminant, pre-interpolation developer solution, and substep development, for gradually reducing development time, development liquid measure and development rotating speed, wherein, total development time is T, the described development time of each development is T1, T2, ..., Tn-1, Tn, T=T1+T2+ ... + Tn-1+Tn, T1>T2>.....>Tn-1>Tn, the described development liquid measure that each development is added is V1, V2, ... Vn-1, Vn, V1>V2>.....>Vn-1>Vn, the described development rotating speed of each development is R1, R2, ... .Rn-1, Rn, R1>R2>.....>Rn-1>Rn, n be more than or equal to 2 positive integer.
Preferably, Tn=0.9Tn-1.
Preferably, Vn=0.9Vn-1.
Preferably, Rn=0.8Rn-1.
Preferably, V1=15 ~ 22 milliliter, R1=40 ~ 60 rev/min, T1=20 ~ 40 second.
Preferably, described substep development comprises further: after each development, rotate described LED chip, got rid of by the developer solution remained on described LED chip, then rotate described LED chip, the motion state of described LED chip is settled out.
Preferably, rotate described LED chip with the speed of 800 ~ 1200 revs/min, the described developer solution remained on described LED chip is got rid of.
Preferably, rotate described LED chip 1 ~ 2 second with the speed of 10 ~ 12 revs/min, the motion state of described LED chip is settled out.
Preferably, the step of described pre-interpolation developer solution comprises: add described developer solution 2 ~ 4 milliliters, develop while rotate described LED chip with 8 ~ 15 revs/min of speed, make described developer solution at the superficial residence 1 ~ 2 second of described LED chip, described LED chip is rotated again with the speed of 800 ~ 1200 revs/min, the developer solution remained on described LED chip is got rid of, then rotate described LED chip 1 ~ 2 second with the speed of 10 ~ 12 revs/min, the motion state of described LED chip is settled out.
Preferably, the step of described cleaning LED chip surface contaminant comprises: rotate described LED chip 3 ~ 5 seconds with the speed of 1000 ~ 1500 revs/min, rotate described LED chip 1 ~ 2 second with the speed of 10 ~ 12 revs/min again, described LED chip motion state is settled out.
The photoetching development method that the present invention proposes, compared with existing photoetching development method, has the following advantages:
1) problem peeled off the collodion silk that removes photoresist and remain is solved.
By substep development, gradually reduce development time, development liquid measure and development rotating speed make photoetching after figure pattern bottom can not fall in inside, figure pattern becomes level and smooth, after vacuum evaporation metal electrode, peel off remove photoresist do not have collodion silk remain.
2) brightness of LED is improved.
Adopt the litho pattern pattern of substep developing method level and smooth, vacuum evaporation trapezoidal electrode shape bottom width out and top width close, LED to issue efficiency higher by more than 3% than traditional disposable developing method.
Certainly, the arbitrary product implementing the application must not necessarily need to reach above-described all technique effects simultaneously.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide further understanding of the present application, and form a application's part, the schematic description and description of the application, for explaining the application, does not form the improper restriction to the application.In the accompanying drawings:
Fig. 1 develop by the disposable photoetching development method of utilization tradition after litho pattern bottom the schematic diagram of pattern;
Fig. 2 is the schematic flow sheet of the photoetching development method for making light emitting diode of the application one embodiment;
Fig. 3 for utilize photoetching development method of the present invention develop after litho pattern bottom the schematic diagram of pattern;
Fig. 4 is the scanning electron microscope (SEM) photograph of the figure according to the photoetching of traditional disposable developing method institute;
Fig. 5 is the scanning electron microscope (SEM) photograph of the figure according to photoetching development method institute of the present invention photoetching;
Fig. 6 is for according to the scanning electron microscope (SEM) photograph after traditional disposable developing method institute electrode evaporation;
Fig. 7 is the scanning electron microscope (SEM) photograph after foundation photoetching development method institute of the present invention electrode evaporation.
Embodiment
As employed some vocabulary to censure specific components in the middle of instructions and claim.Those skilled in the art should understand, and hardware manufacturer may call same assembly with different noun.This specification and claims are not used as with the difference of title the mode distinguishing assembly, but are used as the criterion of differentiation with assembly difference functionally." comprising " as mentioned in the middle of instructions and claim is in the whole text an open language, therefore should be construed to " comprise but be not limited to "." roughly " refer to that in receivable error range, those skilled in the art can solve the technical problem within the scope of certain error, reach described technique effect substantially.Instructions subsequent descriptions is implement the better embodiment of the application, and right described description is for the purpose of the rule that the application is described, and is not used to the scope limiting the application.The protection domain of the application is when being as the criterion depending on the claims person of defining.
Fig. 2 is the schematic flow sheet of the photoetching development method for making light emitting diode of the application one embodiment.As shown in Figure 2, comprise the following steps:
Step 201, cleaning LED chip surface contaminant.
In an embodiment of the present invention, rotate LED chip 3 ~ 5 seconds with the speed of 1000 ~ 1500 revs/min, object is that chip surface particulate contaminants is got rid of.
Then rotate chip 1 ~ 2 second with the speed of 10 ~ 12 revs/min, make that chip motion is in stable condition to get off.
Step 202, adds developer solution in advance.
In an embodiment of the present invention, add developer solution 2 ~ 4 milliliters, develop while rotate LED chip with 8 ~ 15 revs/min of speed, developer solution stops 1 ~ 2 second at chip surface, rotate described LED chip with the speed of 800 ~ 1200 revs/min again, the developer solution remained on described LED chip is got rid of.
After process like this, make developer solution soak photoresist surface, being convenient to developer solution in ensuing development step can be paved with rapidly photoresist surface.
Then rotate chip 1 ~ 2 second with the speed of 10 ~ 12 revs/min, make that chip motion is in stable condition to get off.
Step 203, substep development.
In the present invention, traditional disposable development is divided into substep development, gradually reduces development time, development liquid measure and development rotating speed, thus make the figure pattern after photoetching become level and smooth.
In an embodiment of the present invention, traditional disposable development is divided into n development, wherein n be more than or equal to 2 positive integer, those skilled in the art can select different development number of times according to design requirement.Suppose that total development time of disposable development is T, the development time of each development then corresponds to T1, T2 ..., Tn-1, Tn, T=T1+T2+ ... + Tn-1+Tn, wherein T1>T2>.....>Tn-1>Tn.Tn=0.9Tn-1 in the preferred embodiment of the present invention.The development liquid measure that each development is added then corresponds to V1, V2 ... Vn-1, Vn, wherein V1>V2>.....>Vn-1>Vn.Vn=0.9Vn-1 in the preferred embodiment of the present invention.The development rotating speed of each development corresponds to R1, R2 ... .Rn-1, Rn, wherein, and R1>R2>.....>Rn-1>Rn.Rn=0.8Rn-1 in the preferred embodiment of the present invention.
Concrete, step 203 comprises following sub-step.
Step 203-1, the 1st development.
In an embodiment of the present invention, add development liquid measure in this step and be designated as V1, V1=15 ~ 22 milliliter; During development, the development rotating speed of chip is R1, R1=40 ~ 60 rev/min; Developer solution is designated as T1 in the chip surface residence time and development time, T1=20 ~ 40 second.
Rotate described LED chip with the speed of 800 ~ 1200 revs/min again, the developer solution remained on described LED chip is got rid of.Rotate chip 1 ~ 2 second with the speed of 10 ~ 12 revs/min again, make that chip motion is in stable condition to get off.
Step 203-2, the 2nd development.
In an embodiment of the present invention, add development liquid measure in this step and be designated as V2, V2<V1, such as V2=13.5 ~ 19.8 milliliter; During development, the development rotating speed of chip is R2, R2<R1, such as R2=32 ~ 48 rev/min; Developer solution is designated as T2 in the chip surface residence time and development time, T2<T1, such as T2=18 ~ 36 second.
Rotate described LED chip with the speed of 800 ~ 1200 revs/min again, the developer solution remained on described LED chip is got rid of.Rotate chip 1 ~ 2 second with the speed of 10 ~ 12 revs/min again, make that chip motion is in stable condition to get off.
.....
Step 203-n, n-th development.
In an embodiment of the present invention, add development liquid measure in this step and be designated as Vn, Vn<Vn-1, such as Vn=0.9Vn-1; During development, the development rotating speed of chip is Rn, Rn<Rn-1, such as Rn=0.8Rn-1; Developer solution is designated as Tn in the chip surface residence time and development time, Tn<Tn-1, such as Tn=0.9Tn-1.
Rotate described LED chip with the speed of 800 ~ 1200 revs/min again, the developer solution remained on described LED chip is got rid of.Rotate chip 1 ~ 2 second with the speed of 10 ~ 12 revs/min again, make that chip motion is in stable condition to get off.
Fig. 3 for utilize photoetching development method of the present invention develop after litho pattern bottom the schematic diagram of pattern.
Comparison diagram 1 and Fig. 3 can find out, obviously fall in the inside bottom traditional disposable developing method litho pattern pattern, too much wider than top bottom trapezoidal electrode pattern.And photoetching development method of the present invention develop after litho pattern bottom pattern can not fall in inside, more few than the different widths at top bottom trapezoidal electrode pattern.
Fig. 4 is the scanning electron microscope (SEM) photograph of the figure according to the photoetching of traditional disposable developing method institute.Fig. 5 is the scanning electron microscope (SEM) photograph of the figure according to photoetching development method institute of the present invention photoetching.Fig. 6 is for according to the scanning electron microscope (SEM) photograph after traditional disposable developing method institute electrode evaporation.Fig. 7 is the scanning electron microscope (SEM) photograph after foundation photoetching development method institute of the present invention electrode evaporation.
As can be seen from above-mentioned scanning electron microscope (SEM) photograph, obviously fall in the inside bottom the pattern of tradition disposable developing method institute litho pattern, too much wider than top bottom trapezoidal electrode pattern, and electrode metal and photoresist stick together, and when can cause peeling off, photoresist collodion silk cannot be removed totally.And the pattern of photoetching development method institute of the present invention litho pattern is level and smooth, just slightly wider than top bottom trapezoidal metal electrode.Therefore compared to the disposable developing method of tradition, the present invention has the following advantages:
1) problem peeled off the collodion silk that removes photoresist and remain is solved.
By substep development, gradually reduce development time, development liquid measure and development rotating speed make photoetching after figure pattern bottom can not fall in inside, figure pattern becomes level and smooth, after vacuum evaporation metal electrode, peel off remove photoresist do not have collodion silk remain.
2) brightness of LED is improved.
Adopt the litho pattern pattern of substep developing method level and smooth, vacuum evaporation trapezoidal electrode shape bottom width out and top width close, LED to issue efficiency higher by more than 3% than traditional disposable developing method.
It should be noted that, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, commodity or system and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, commodity or system.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, commodity or the system comprising described key element and also there is other identical element.
The foregoing is only the embodiment of the application, be not limited to the application.To those skilled in the art, the application can have various modifications and variations.Any amendment done within all spirit in the application and principle, equivalent replacement, improvement etc., within the right that all should be included in the application.
Claims (10)
1., for making a photoetching development method for light emitting diode, it is characterized in that, comprise:
Cleaning LED chip surface contaminant;
Pre-interpolation developer solution; And
Substep development, for gradually reducing development time, development liquid measure and development rotating speed;
Wherein, total development time is T, the described development time of each development is T1, T2, ..., Tn-1, Tn, T=T1+T2+ ... + Tn-1+Tn, T1>T2>.....>Tn-1>Tn, the described development liquid measure that each development is added is V1, V2, ... Vn-1, Vn, V1>V2>.....>Vn-1>Vn, the described development rotating speed of each development is R1, R2, ... .Rn-1, Rn, R1>R2>.....>Rn-1>Rn, n be more than or equal to 2 positive integer.
2. photoetching development method as claimed in claim 1, is characterized in that, Tn=0.9Tn-1.
3. photoetching development method as claimed in claim 1, is characterized in that, Vn=0.9Vn-1.
4. photoetching development method as claimed in claim 1, is characterized in that, Rn=0.8Rn-1.
5. photoetching development method as claimed in claim 1, is characterized in that, V1=15 ~ 22 milliliter, R1=40 ~ 60 rev/min, T1=20 ~ 40 second.
6. photoetching development method as claimed in claim 1, is characterized in that, described substep development comprises further:
After each development, rotate described LED chip, the developer solution remained on described LED chip is got rid of, then rotate described LED chip, the motion state of described LED chip is settled out.
7. photoetching development method as claimed in claim 6, is characterized in that, rotate described LED chip with the speed of 800 ~ 1200 revs/min, got rid of by the described developer solution remained on described LED chip.
8. photoetching development method as claimed in claim 6, is characterized in that, rotate described LED chip 1 ~ 2 second with the speed of 10 ~ 12 revs/min, the motion state of described LED chip is settled out.
9. photoetching development method as claimed in claim 1, it is characterized in that, the step of described pre-interpolation developer solution comprises:
Add described developer solution 2 ~ 4 milliliters, develop while rotate described LED chip with 8 ~ 15 revs/min of speed, make described developer solution at the superficial residence 1 ~ 2 second of described LED chip, described LED chip is rotated again with the speed of 800 ~ 1200 revs/min, the developer solution remained on described LED chip is got rid of, then rotate described LED chip 1 ~ 2 second with the speed of 10 ~ 12 revs/min, the motion state of described LED chip is settled out.
10. photoetching development method as claimed in claim 1, it is characterized in that, the step of described cleaning LED chip surface contaminant comprises:
Rotate described LED chip 3 ~ 5 seconds with the speed of 1000 ~ 1500 revs/min, then rotate described LED chip 1 ~ 2 second with the speed of 10 ~ 12 revs/min, described LED chip motion state is settled out.
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| CN201510551842.0A CN105204300A (en) | 2015-09-01 | 2015-09-01 | Photoetching development method for manufacturing light emitting diode |
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| CN201510551842.0A CN105204300A (en) | 2015-09-01 | 2015-09-01 | Photoetching development method for manufacturing light emitting diode |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010050050A1 (en) * | 2000-06-13 | 2001-12-13 | Akira Nishiya | Developing treatment method and developing treatment unit |
| JP2007305864A (en) * | 2006-05-12 | 2007-11-22 | Matsushita Electric Ind Co Ltd | Developing method and manufacturing method of semiconductor device using the same |
| CN102385262A (en) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | Development method of photoetching process |
| CN102621828A (en) * | 2011-01-27 | 2012-08-01 | 无锡华润上华半导体有限公司 | Secondary development method |
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- 2015-09-01 CN CN201510551842.0A patent/CN105204300A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010050050A1 (en) * | 2000-06-13 | 2001-12-13 | Akira Nishiya | Developing treatment method and developing treatment unit |
| JP2007305864A (en) * | 2006-05-12 | 2007-11-22 | Matsushita Electric Ind Co Ltd | Developing method and manufacturing method of semiconductor device using the same |
| CN102385262A (en) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | Development method of photoetching process |
| CN102621828A (en) * | 2011-01-27 | 2012-08-01 | 无锡华润上华半导体有限公司 | Secondary development method |
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