CN109216405A - The manufacturing method of AMOLED metal mask plate - Google Patents
The manufacturing method of AMOLED metal mask plate Download PDFInfo
- Publication number
- CN109216405A CN109216405A CN201710525447.4A CN201710525447A CN109216405A CN 109216405 A CN109216405 A CN 109216405A CN 201710525447 A CN201710525447 A CN 201710525447A CN 109216405 A CN109216405 A CN 109216405A
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- Prior art keywords
- amoled
- substrate
- mask plate
- metal mask
- manufacturing
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920001621 AMOLED Polymers 0.000 title claims abstract description 47
- 239000002184 metal Substances 0.000 title claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 238000005323 electroforming Methods 0.000 claims abstract description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 238000011282 treatment Methods 0.000 claims description 5
- 238000011161 development Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Printing Plates And Materials Therefor (AREA)
- Manufacture Or Reproduction Of Printing Formes (AREA)
Abstract
A kind of manufacturing method of AMOLED metal mask plate, comprising: form the substrate with conductive pattern electrode layer；Electroforming growth is carried out to substrate, forms AMOLED metal mask plate；AMOLED metal mask plate is separated from substrate；And electroforming is repeated to substrate and grows to form AMOLED metal mask plate.The manufacturing method high production efficiency of AMOLED metal mask plate provided by the invention, while production cycle and production cost can also be effectively reduced.
Description
Technical field
The present invention relates to a kind of manufacturing methods of AMOLED metal mask plate, belong to technical field of AMOLED display.
Background technique
AMOLED (Active Matrix Organic Light Emitting Diode, active matrix organic light-emitting two
Polar body) display using OLED be used as illuminating source, in terms of display performance with LCD (Liquid Crystal Display, liquid
Crystal display) it compares, have and shows that fast reaction speed, ultra-wide visual angle, superelevation contrast and saturation degree, (color covers colour gamut broadness
Lid rate can reach NTSC110%) the advantages of.On display screen structure, AMOLED actively shines, and power consumption is the 60% of LCD, is not required to
Backlight module is wanted, the advantages of display screen can accomplish ultrathin flexible.AMOLED structure ratio LCD is simple, however at this stage,
The manufacturing cost of AMOLED is still higher than LCD, and high cost is to restrict one of an important factor for displayer further expands.
AMOLED and the LCD panel maximum difference in manufacturing process are exactly to need using luminous organic material as luminous
Organic film technique in source.Vacuum vapour deposition is presently the most the small size AMOLED of mature and existing most volume productions
Organic film technique that product uses.During vapor deposition, need using FMM (Fine pitch Metal Mask/or
Shield Mask, precision metallic hollow out mask plate) it is blocked for plated film, pixel graphics are generated, then will be had under vacuum conditions
The heating of machine material is allowed to evaporate and selects deposition to form a film on substrate by hollow metal mask plate.Hollow metal mask plate belongs to
Core mold and consumptive material in AMOLED processing procedure.
The metal mask plate of traditional big opening size generally uses mechanical processing method, is carried out according to the dimension of picture of opening
The processing method bore, cut, file, ground.Small open metal hollowed-out mask uses method for chemially etching.With display technology development and
Small panel is to high-resolution requirement, and to the precision of mask plate, more stringent requirements are proposed, and the method for precise electrotyping is increasingly becoming system
The preferred method of standby high-precision metal mask plate.The manufacturing method of precise electrotyping is usually to prepare graphic mask plate, then in base
Gluing on plate carries out one or many ultraviolet alignment exposures, carries out selectively electroforming using the restriction effect of glue-line later；Entirely
Complex technical process, substrate need to be prepared again every time, and the period is long, at high cost, be unfavorable for industrial applications and popularization.
Summary of the invention
The purpose of the present invention is to provide a kind of manufacturing method of AMOLED metal mask plate, high production efficiency, together
When can also be effectively reduced production cycle and production cost.
The embodiment of the present invention provides a kind of manufacturing method of AMOLED metal mask plate, comprising: being formed has conductive pattern
The substrate of shape electrode layer；Electroforming growth is carried out to substrate, forms AMOLED metal mask plate；By AMOLED metal mask plate
It is separated from substrate；And electroforming is repeated to substrate and grows to form AMOLED metal mask plate.
Further, it includes: to provide substrate and in substrate that being formed, which has the method for the substrate of conductive pattern electrode layer,
Conductive layer is formed on substrate；Photoresist layer is formed on the electrically conductive, and it is figuratum to be exposed development formation tool to photoresist layer
Photoresist layer；Conductive layer is etched to form the figuratum conductive pattern electrode layer of tool；And it washes away on conductive pattern electrode layer
Photoresist layer to form the substrate of the conductive pattern electrode layer of tool.
Further, forming photoresist layer on the electrically conductive further includes before starting the cleaning processing to conductive layer surface.
Further, substrate is carried out before electroforming growth further including carrying out substrate cleaning and surface passivating treatment.
Further, substrate is repeated before electroforming growth to further include carrying out substrate at cleaning and surface passivation
Reason.
Further, conductive pattern electrode layer with a thickness of 20~200 nanometers.
Further, conductive pattern electrode layer includes multiple conductive spirtes, the distance between adjacent conductive spirte
For D；AMOLED metal mask plate includes multiple exposure mask spirtes, and the height of exposure mask spirte is d, in which: d < D/2.
Further, the range of the height d of exposure mask spirte is 5~30 microns.
Further, being formed has the method for the substrate of conductive pattern electrode layer using one in printing, selective deposition
Kind.
Present pre-ferred embodiments provide the manufacture that AMOLED metal mask plate is prepared using reusable substrate
Method.The substrate directly uses conductive conductive pattern electrode layer, and surface, can be in this base after surface treatment without photoresist
Plate, which powers on, casts out satisfactory high-precision A MOLED metal mask plate.After AMOLED is removed with metal mask plate, substrate can
It reuses, the manufacturing method high production efficiency, while production cycle and production cost can also be effectively reduced.
Detailed description of the invention
Fig. 1 to 8 is the section knot of each step of manufacturing method of the AMOLED metal mask plate of present pre-ferred embodiments
Structure schematic diagram.
Specific embodiment
It is of the invention to reach the technical approach and effect that predetermined goal of the invention is taken further to illustrate, below in conjunction with
Accompanying drawings and embodiments, to a specific embodiment of the invention, structure, feature and its effect, detailed description is as follows.
The manufacturing method of the AMOLED metal mask plate of present pre-ferred embodiments includes the following steps:
As shown in Figure 1, providing substrate 110 and forming conductive layer 120 ' in substrate 110.
Substrate 110 is, for example, that the planarizing materials such as glass, silicon wafer, metal plate are made.It is heavy using vapor deposition, sputtering or chemistry
The methods of product adheres to one layer of conductive layer 120 ' in substrate 110.
The material and thickness of conductive layer 120 ' can be formed by material used in pattern and electroforming according to the later period and be arranged on demand.
The material of conductive layer 120 ' is, for example, metal or oxide.The thickness of conductive layer 120 ' is, for example, 20~200 nanometers.
As shown in Fig. 2, above forming photoresist layer 130 ' in conductive layer 120 '.
Before conductive layer 120 ' above forms photoresist layer 130 ' further include the surface of conductive layer 120 ' is carried out degreasing,
The cleaning treatments such as degranulation.
As shown in figure 3, being exposed using mask plate 140 to photoresist layer 130 '.In the present embodiment, photoresist layer 130 '
Material be positive-tone photo glue material, the pattern of selected mask plate 140 is consistent with the pattern of required reservation, but not with this
It is limited.
Has figuratum photoresist layer 130 as shown in figure 4, carrying out development to the photoresist layer 130 ' after exposure and being formed.Specifically
Ground washes away the part being exposed in photoresist layer 130 ' using developer solution, and the part not being exposed, which remains to be formed, has figure
The photoresist layer 130 of case.
Have figuratum lead as shown in figure 5, be etched and to be formed to conductive layer 120 ' using the barrier effect of photoresist layer 130
Electrograph shape electrode layer 120.
The selection of the material of conductive layer 120 ' will affect etching accuracy and the electroforming performance in later period.Material property, table
Surface treatment, mechanical strength influence whether separating effect and reusability.The material of conductive layer 120 ' be, for example, copper, nickel or its
Its non-metallic conducting material.
Specifically, according to 120 ' material of conductive layer, suitable etching reagent (such as weak acid or mixed acid) is selected, according to upper layer
Photoresist layer 130 figure to conductive layer 120 ' carry out chemical etching, obtain and the consistent conductive pattern of the pattern of photoresist layer 130
Electrode layer 120.It is formed by the thickness of conductive pattern electrode layer 120 and the consistency of thickness of conductive layer 120 '.
As shown in fig. 6, washing away the photoresist layer 130 on conductive pattern electrode layer 120, being formed has conductive pattern electrode layer
120 substrate 100.Being formed by substrate 100 includes substrate 110 and the conductive pattern being arranged in substrate 110 electricity
Pole layer 120.
Conductive pattern electrode layer 120 includes multiple conductive spirtes 121, in the present embodiment, adjacent two conductive subgraphs
The distance between shape 121 is D.
In the present embodiment, the above-mentioned substrate 100 with conductive pattern electrode layer 120 is formed using the method for etching, first
The layer conductive layer 120 ' of a flood is set in substrate 110, conductive pattern electrode layer 120 is formed by etch patterning, is belonged to
In the method for subtracting material.In other embodiments, the methods of printing, selective deposition can also be used by increasing in substrate 110
Conductive pattern electrode layer 120 is arranged in material.
As shown in fig. 7, carrying out electroforming growth to substrate 100, AMOLED metal mask plate 200 is formed.
Specifically, after conductive pattern electrode layer 120 is powered, electroforming material is led in each of conductive pattern electrode layer 120 one
Electrical patterns 121 form an exposure mask spirte 210.It is worth noting that during electroforming, due to electroforming material substantially by
It is grown according to isotropism, exposure mask spirte 210 also can be along being parallel to while growing tall perpendicular to 110 direction of substrate
The direction length and width of substrate 110, to prevent the pattern in two adjacent exposure mask spirtes 210 to be connected with each other, therefore it is adjacent
The distance between two conductive spirtes 121 be the height d of D and exposure mask spirte 210 (because of the thickness of conductive spirte 121
Spend relatively thin, ignore the thickness of conductive spirte 121 here) between must satisfy lower formula: d < D/2.The height of exposure mask spirte 210
The range of degree d (that is to say AMOLED with the thickness of metal mask plate 200) is generally 5~30 microns.
In the present embodiment, substrate 100 is carried out before electroforming growth further including carrying out substrate 100 cleaning and surface passivation
Processing carries out electroforming to substrate 100 again after processing.
As shown in figure 8, AMOLED metal mask plate 200 is separated from substrate 100,100 He of substrate is obtained after separation
AMOLED metal mask plate 200.
It carries out cleaning and surface passivating treatment again to the substrate 100 after separation, can repeat to carry out electroforming in substrate 100
Growth forms AMOLED with metal mask plate 200 (as shown in Figure 7) again.
The AMOLED system of metal mask plate 200 is prepared using reusable substrate 100 the present invention provides a kind of
Make method.The substrate 100 directly uses conductive conductive pattern electrode layer 120, and surface is without photoresist, after surface treatment
It can be powered in this substrate 100 and cast out satisfactory high-precision A MOLED metal mask plate 200.AMOLED metal mask plate
200 removing after, substrate 100 is reusable, the manufacturing method high production efficiency, at the same can also be effectively reduced the production cycle and
Production cost.
The above described is only a preferred embodiment of the present invention, be not intended to limit the present invention in any form, though
So the present invention has been disclosed as a preferred embodiment, and however, it is not intended to limit the invention, any technology people for being familiar with this profession
Member, without departing from the scope of the present invention, when the technology contents using the disclosure above make a little change or modification
It is right according to the technical essence of the invention for the equivalent embodiment of equivalent variations, but without departing from the technical solutions of the present invention
Any simple modification, equivalent change and modification made by above embodiments, all of which are still within the scope of the technical scheme of the invention.
Claims (9)
1. a kind of manufacturing method of AMOLED metal mask plate characterized by comprising
Form the substrate (100) with conductive pattern electrode layer (120)；
Electroforming growth is carried out to the substrate (100), forms AMOLED with metal mask plate (200)；
The AMOLED is separated with metal mask plate (200) from the substrate (100)；And
Repeat electroforming to the substrate (100) to grow to form the AMOLED with metal mask plate (200).
2. the manufacturing method of AMOLED metal mask plate according to claim 1, which is characterized in that being formed has conduction
The method of the substrate (100) of pattern electrodes layer (120) includes:
Substrate (110) are provided and form conductive layer (120 ') on the substrate (110)；
Photoresist layer (130 ') are formed on the conductive layer (120 '), development shape is exposed to the photoresist layer (130 ')
At the figuratum photoresist layer (130) of tool；
The conductive layer (120 ') is etched to form the figuratum conductive pattern electrode layer (120) of tool；And
The photoresist layer (130) on the conductive pattern electrode layer (120) is washed away to form the conductive pattern electrode layer of tool
(120) the substrate (100).
3. the manufacturing method of AMOLED metal mask plate according to claim 2, which is characterized in that in the conductive layer
It further includes before starting the cleaning processing to conductive layer (120 ') surface that the photoresist layer (130 ') is formed on (120 ').
4. the manufacturing method of AMOLED metal mask plate according to claim 1, which is characterized in that the substrate
(100) it carries out before electroforming growth further including carrying out the substrate (100) cleaning and surface passivating treatment.
5. the manufacturing method of AMOLED metal mask plate according to claim 1, which is characterized in that the substrate
(100) repeat before electroforming growth to further include carrying out the substrate (100) cleaning and surface passivating treatment.
6. the manufacturing method of AMOLED metal mask plate according to claim 1, which is characterized in that the conductive pattern
Electrode layer (120) with a thickness of 20~200 nanometers.
7. the manufacturing method of AMOLED metal mask plate according to claim 1, which is characterized in that the conductive pattern
Electrode layer (120) includes multiple conductive spirtes (121), and the distance between adjacent described conductive spirte (121) is D；
AMOLED metal mask plate (200) includes multiple exposure mask spirtes (210), and the height of the exposure mask spirte (210) is d,
Wherein: d < D/2.
8. the manufacturing method of AMOLED metal mask plate according to claim 7, the height of the exposure mask spirte (210)
The range for spending d is 5~30 microns.
9. the manufacturing method of AMOLED metal mask plate according to claim 1, which is characterized in that formed described in having
The method of the substrate (100) of conductive pattern electrode layer (120) is using one of printing, selective deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710525447.4A CN109216405A (en) | 2017-06-30 | 2017-06-30 | The manufacturing method of AMOLED metal mask plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710525447.4A CN109216405A (en) | 2017-06-30 | 2017-06-30 | The manufacturing method of AMOLED metal mask plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109216405A true CN109216405A (en) | 2019-01-15 |
Family
ID=64961107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710525447.4A Pending CN109216405A (en) | 2017-06-30 | 2017-06-30 | The manufacturing method of AMOLED metal mask plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109216405A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110670014A (en) * | 2018-07-03 | 2020-01-10 | 上海和辉光电有限公司 | Mother plate core mold, mask plate and manufacturing method thereof |
| CN114032497A (en) * | 2021-07-30 | 2022-02-11 | 达运精密工业股份有限公司 | Metal mask manufacturing method and metal mask |
| CN115717256A (en) * | 2021-08-24 | 2023-02-28 | 苏州苏大维格科技集团股份有限公司 | A metal mask plate electroforming master plate, metal mask plate and preparation method thereof |
| CN115948710A (en) * | 2022-10-20 | 2023-04-11 | 京东方科技集团股份有限公司 | Evaporation mask plate, manufacturing method thereof and evaporation equipment |
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| EP0713929A1 (en) * | 1994-10-28 | 1996-05-29 | SCITEX DIGITAL PRINTING, Inc. | Thin film pegless permanent orifice plate mandrel |
| CN1392905A (en) * | 2000-09-26 | 2003-01-22 | 伊斯曼柯达公司 | Method for producing metal mask and metal mask |
| CN101435093A (en) * | 2007-11-15 | 2009-05-20 | 微邦科技股份有限公司 | Electroforming metal structure and manufacturing method thereof |
-
2017
- 2017-06-30 CN CN201710525447.4A patent/CN109216405A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0713929A1 (en) * | 1994-10-28 | 1996-05-29 | SCITEX DIGITAL PRINTING, Inc. | Thin film pegless permanent orifice plate mandrel |
| CN1392905A (en) * | 2000-09-26 | 2003-01-22 | 伊斯曼柯达公司 | Method for producing metal mask and metal mask |
| CN101435093A (en) * | 2007-11-15 | 2009-05-20 | 微邦科技股份有限公司 | Electroforming metal structure and manufacturing method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110670014A (en) * | 2018-07-03 | 2020-01-10 | 上海和辉光电有限公司 | Mother plate core mold, mask plate and manufacturing method thereof |
| CN114032497A (en) * | 2021-07-30 | 2022-02-11 | 达运精密工业股份有限公司 | Metal mask manufacturing method and metal mask |
| CN114032497B (en) * | 2021-07-30 | 2023-05-05 | 达运精密工业股份有限公司 | Method for manufacturing metal mask and metal mask |
| CN115717256A (en) * | 2021-08-24 | 2023-02-28 | 苏州苏大维格科技集团股份有限公司 | A metal mask plate electroforming master plate, metal mask plate and preparation method thereof |
| CN115948710A (en) * | 2022-10-20 | 2023-04-11 | 京东方科技集团股份有限公司 | Evaporation mask plate, manufacturing method thereof and evaporation equipment |
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| CB02 | Change of applicant information | ||
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Address after: 215026, Suzhou, Jiangsu province Suzhou Industrial Park, Su Hong Road, North Bell Street, No. 478 Applicant after: SUZHOU SUDAVIG SCIENCE AND TECHNOLOGY GROUP Co.,Ltd. Applicant after: Suzhou University Address before: 215026, Suzhou, Jiangsu province Suzhou Industrial Park, Su Hong Road, North Bell Street, No. 478 Applicant before: SVG OPTRONICS, Co.,Ltd. Applicant before: Suzhou University |
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Application publication date: 20190115 |