CN105143380B - Adhesive tapes and tapes for wafer processing - Google Patents

Abstract

The object of the present invention is to provide a kind of adhesive tape for wafer processing, there is the uniform expansion and pick of the process for being suitable for being truncated gluing oxidant layer using expansion, and machinability in blade dicing processes and pick are also excellent.The present invention uses following adhesive tape, which is characterized in that adhesive phase is laminated on the face of a side of base material film, in the 4000~650cm based on infrared absorption spectrum analysis for comparing thick 1 μm of the region from the surface of the base material film side of described adhesive layer^{- 1}Infrared spectroscopy and from the surface with base material film side opposite side of described adhesive layer thick 1 μm of region 4000~650cm based on infrared absorption spectrum analysis^{- 1}Infrared spectroscopy when, matching degree is 95% hereinafter, the adhesive phase in thick 1 μm of region contains the compound (A) with radiation-curable carbon-to-carbon double bond and at least one kind of compound (B) in Polyisocyanate esters, melamine formaldehyde resin and epoxy resin in the molecule from the surface of base material film side opposite side.

Description

Adhesive tapes and tapes for wafer processing

technical field

The present invention relates to an expandable tape for wafer processing, etc., which can be used to fix a semiconductor wafer in a dicing process for cutting a semiconductor wafer into chip-shaped elements, and can also be used for bonding after dicing It can be used in the die bonding process or the mounting process between chip-chip or chip-substrate, and can be used when the adhesive layer is cut along the chip by extension.

Background technique

In the manufacturing process of semiconductor devices such as ICs, in order to reduce the thickness of the wafer after forming the circuit pattern, a back grinding process is performed to grind the back surface of the wafer, and a tape for wafer processing having adhesiveness and elasticity is attached to the back surface of the wafer. A dicing process of cutting a wafer into chip units, an expansion process of expanding (expanding) a tape for wafer processing, a pick-up process of picking up the cut chips, and bonding the picked-up chips to a lead frame or a package substrate, etc. The above (or, in the case of a stacked package, a die bonding (mount) process in which chips are stacked and bonded together).

In the above-mentioned back grinding step, in order to protect the circuit pattern-forming surface (wafer surface) of the wafer from contamination, a surface protection tape is used. When the surface protection tape is peeled off from the wafer surface after the back surface grinding of the wafer is completed, the wafer processing tape (dicing/die bonding tape) described below is attached to the wafer back surface, and then the wafer processing tape side is fixed. On the suction stage, the surface protection tape was peeled off after the treatment to reduce the adhesive force with the wafer was performed on the surface protection tape. The wafer from which the surface protection tape has been peeled off is then picked up from the suction stage in a state where the tape for wafer processing is adhered to the back surface, and is supplied to the next dicing process. In addition, the above-mentioned so-called treatment for reducing the adhesive force is an energy ray irradiation treatment when the surface protective tape is composed of an energy ray-curable component such as ultraviolet rays, and is an energy ray irradiation treatment when the surface protective tape is composed of a thermosetting component. heat treatment.

In the dicing process to the mounting process after the above-mentioned back grinding process, a tape for wafer processing in which an adhesive layer and an adhesive layer are sequentially laminated on the base film is used. Usually, when a wafer is used, first, the adhesive layer of the wafer is bonded to the back surface of the wafer to fix the wafer, and the wafer and the adhesive layer are diced into chip units using a dicing blade. After that, by expanding the tape in the radial direction of the wafer, an expanding step of widening the gap between the chips is performed. This expansion process is implemented for the purpose of improving the visibility of the chip by a CCD camera or the like in the subsequent pickup process, and preventing chip damage caused by contact between adjacent chips when the chip is picked up. damaged. After that, the chip is peeled off from the adhesive layer together with the adhesive layer in a pick-up process, picked up, and directly bonded to a lead frame, a package substrate, or the like in a mounting process. In this way, by using the tape for wafer processing, the chip with the adhesive layer can be directly bonded to the lead frame, the package substrate, etc., so it is possible to omit the application process of the adhesive or to separately bond the die bonding film on each chip. process.

However, in the dicing step, as described above, the wafer is diced together with the adhesive layer using a dicing blade, so not only chips of the wafer but also chips of the adhesive layer are generated. In addition, when chips of the adhesive layer are clogged in the dicing grooves of the wafer, the chips adhere to each other, resulting in poor pick-up and the like, and there is a problem in that the yield of the semiconductor device decreases.

In order to solve such a problem, a method has been proposed in which only the wafer is diced with a knife in the dicing step, and the adhesive layer is cut for each chip by expanding the tape for wafer processing in the expanding step (for example, the patent document 1). According to the cutting method of the adhesive layer using the tension at the time of expansion, chips of the adhesive are not generated, and there is no adverse effect on the pick-up process.

In addition, in recent years, as a method of cutting a wafer, a so-called stealth dicing method, which can cut a wafer in a non-contact manner using a laser processing apparatus, has been proposed. For example, Patent Document 2 discloses, as a stealth dicing method, a method for cutting a semiconductor substrate, which includes a method of attaching a sheet with an adhesive layer (die bonding resin layer) interposed therebetween by condensing focal light. The inside of the semiconductor substrate of the material is irradiated with laser light to form a reformed region caused by multiphoton absorption in the inside of the semiconductor substrate, and the modified region is used as a predetermined cutting part; and by expanding the sheet, along the process of A step of cutting the semiconductor substrate and the adhesive layer by the scheduled cutting portion.

In addition, as another wafer cutting method using a laser processing apparatus, for example, Patent Document 3 proposes a wafer dividing method including mounting an adhesive layer for die bonding on the back surface of the wafer (adhesive bonding). film); the process of laminating an extensible protective adhesive tape on the adhesive layer side of the wafer to which the adhesive layer is attached; along a dicing street (street) from the surface of the wafer to which the protective adhesive tape is attached A step of irradiating a laser beam to divide into individual chips; a step of expanding a protective adhesive tape to apply a tensile force to the adhesive layer and breaking the adhesive layer for each chip; and bonding the chip to which the broken adhesive layer was attached from the protective The process of disengaging from the belt.

According to the wafer cutting methods described in Patent Document 2 and Patent Document 3, since the wafer is cut in a non-contact manner by the irradiation of laser light and the expansion of the tape, the physical load on the wafer is small, and it is possible to avoid the current mainstream phenomenon. The wafer is cut by cutting chips (chips) of the wafer as in the case of blade dicing. In addition, since the adhesive layer is cut by expansion, chips of the adhesive layer are not generated. Therefore, it has attracted attention as an excellent technology that can replace blade dicing.

As described in the above-mentioned Patent Documents 1 to 3, in the method of cutting the adhesive layer by expansion, in order to reliably cut the adhesive layer along the chip for the wafer to be used, it is necessary to make the base film uniform and in all directions. The homogeneity of the expansibility is sufficiently transmitted to the adhesive layer through the adhesive layer.

This is because, when offset occurs at the interface between the pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer, sufficient tensile force is not transmitted to the pressure-sensitive adhesive layer at that location, and the pressure-sensitive adhesive layer cannot be cut.

However, in general, in the case of a wafer processing tape designed so that the interface between the pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer does not shift, there is a method of increasing the peel strength between the pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer. In the pick-up process, there is a problem that the divided chips cannot be peeled off. Conversely, when the peeling strength between the adhesive layer and the adhesive layer is made too low, a problem in that chip dispersion is likely to occur in the blade dicing process arises.

prior art literature

Patent Literature

Patent Document 1 Japanese Patent Laid-Open No. 2007-5530

Patent Document 2 Japanese Patent Laid-Open No. 2003-338467

Patent Document 3 Japanese Patent Laid-Open No. 2004-273895

SUMMARY OF THE INVENTION

The problem to be solved by the invention

Therefore, an object of the present invention is to provide a tape for wafer processing which has uniform expandability and pick-up properties suitable for a process of cutting an adhesive layer by expansion, and is also excellent in machinability and pick-up properties in a blade dicing process .

The object of this invention can be achieved by the following means.

<1> A pressure-sensitive adhesive tape in which a pressure-sensitive adhesive layer is laminated on one surface of a base film, and the pressure-sensitive adhesive layer has a thickness of 1 μm from the surface of the pressure-sensitive adhesive layer on the base film side. 4,000 to 650 cm ⁻¹ of infrared spectrum by infrared absorption spectrum analysis of the region, and infrared absorption spectrum analysis of a region of 1 μm thick from the surface of the adhesive layer on the opposite side to the base film side. In the infrared spectrum of 4000 to 650 cm ⁻¹ , the degree of matching is 95% or less, and the adhesive layer in a region with a thickness of 1 μm from the surface on the opposite side of the base film side contains carbon- A compound (A) of a carbon double bond, and a compound (B) of at least one selected from polyisocyanates, melamine-formaldehyde resins, and epoxy resins.

<2> The pressure-sensitive adhesive tape according to <1>, wherein the pressure-sensitive adhesive layer has a thickness of 1.5 to 15 μm.

<3> The pressure-sensitive adhesive tape according to <1> or <2>, wherein the radiation curable carbon-carbon double bond has an iodine value of 0.5 to 30.

<4> The pressure-sensitive adhesive tape according to any one of <1> to <3>, wherein the compound having a radiation-curable carbon-carbon double bond has a molecular weight of 300,000 to 2,000,000.

<5> A tape for wafer processing, wherein at least a portion of the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape according to any one of <1> to <4> to which a wafer is to be bonded is laminated. In the adhesive layer, the adhesive layer is not laminated on the portion to be attached to the dicing frame.

<6> A method of manufacturing a semiconductor device, characterized in that:

The method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using the tape for wafer processing described in <5>, comprising:

(a) the process of laminating the surface protection tape on the surface of the wafer formed with the circuit pattern;

(b) a back grinding process for grinding the back surface of the wafer;

(c) a step of laminating the adhesive layer of the tape for wafer processing to the back surface of the wafer in a state where the wafer is heated to 70 to 80° C.;

(d) a step of peeling off the surface protection tape from the wafer surface;

(e) a step of irradiating laser light along the cut-off line of the wafer to form a modified region caused by multiphoton absorption inside the wafer;

(f) expanding the tape for wafer processing so as to cut the wafer and the adhesive layer of the tape for wafer processing along a cutting line to obtain a plurality of chips with the adhesive layer;

(g) a step of removing the slack generated in the expanding step by heating and shrinking the portion not overlapping the chip in the expanded tape for wafer processing and maintaining the gap between the chips;

(h) The process of picking up the said chip|tip with the said adhesive bond layer from the adhesive bond layer of the said tape for wafer processing.

<7> A method of manufacturing a semiconductor device, characterized in that:

The method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using the tape for wafer processing described in <5>, comprising:

(a) the process of laminating the surface protection tape on the surface of the wafer formed with the circuit pattern;

(b) a back grinding process for grinding the back surface of the wafer;

(c) a step of laminating the adhesive layer of the tape for wafer processing to the back surface of the wafer in a state where the wafer is heated to 70 to 80° C.;

(d) a step of peeling off the surface protection tape from the wafer surface;

(e) a process of irradiating laser light along the cutting line on the surface of the wafer to cut the wafer into chips;

(f) an expanding step of obtaining a plurality of chips with the adhesive layer by expanding the tape for wafer processing to cut the adhesive layer for each chip;

(g) a step of removing the slack generated in the expanding step by heating and shrinking the portion not overlapping the chip in the expanded tape for wafer processing and maintaining the gap between the chips;

(h) The process of picking up the said chip|tip with the said adhesive bond layer from the adhesive bond layer of the said tape for wafer processing.

<8> A method of manufacturing a semiconductor device, characterized in that:

The method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using the tape for wafer processing described in <5>, comprising:

(a) the process of laminating the surface protection tape on the surface of the wafer formed with the circuit pattern;

(b) a back grinding process for grinding the back surface of the wafer;

(c) a step of laminating the adhesive layer of the tape for wafer processing to the back surface of the wafer in a state where the wafer is heated to 70 to 80° C.;

(d) a step of peeling off the surface protection tape from the wafer surface;

(e) the process of cutting the wafer along the cutting line with a dicing blade and cutting it into chips;

(f) an expanding step of obtaining a plurality of chips with the adhesive layer by expanding the tape for wafer processing to cut the adhesive layer for each chip;

(g) a step of removing the slack generated in the expanding step by heating and shrinking the portion not overlapping the chip in the expanded tape for wafer processing and maintaining the gap between the chips;

(h) The process of picking up the said chip|tip with the said adhesive bond layer from the adhesive bond layer of the said tape for wafer processing.

<9> A method of manufacturing a semiconductor device, characterized in that:

The method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using the tape for wafer processing described in <5>, comprising:

(a) a step of cutting the wafer on which the circuit pattern is formed with a dicing blade to a depth smaller than the thickness of the wafer along a predetermined cutting line;

(b) a process of attaching a surface protection tape on the wafer surface;

(c) grinding the backside of the wafer and cutting it into a backside grinding process;

(d) a step of laminating the adhesive layer of the tape for wafer processing to the back surface of the wafer cut into the chip in a state where the wafer is heated to 70 to 80° C.;

(e) a step of peeling off a surface protection tape from the wafer surface cut into the chip;

(f) an expanding step of obtaining a plurality of chips with the adhesive layer by expanding the tape for wafer processing to cut the adhesive layer for each chip;

(g) in the expanded tape for wafer processing, by heating and shrinking the portion not overlapping with the chip to remove the slack generated in the expanding step, and maintaining the gap between the chips;

(h) The process of picking up the said chip|tip with an adhesive bond layer from the adhesive bond layer of the said tape for wafer processing.

<10> A method of manufacturing a semiconductor device, characterized in that:

The method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using the tape for wafer processing described in <5>, comprising:

(a) the process of laminating the surface protection tape on the surface of the wafer formed with the circuit pattern;

(b) a process of irradiating laser light along the cut-off line of the wafer to form a modified region caused by multiphoton absorption inside the wafer;

(c) a back grinding process for grinding the back surface of the wafer;

(d) a step of laminating the adhesive layer of the tape for wafer processing to the back surface of the wafer in a state where the wafer is heated to 70 to 80° C.;

(e) a step of peeling off the surface protection tape from the wafer surface;

(f) expanding the wafer processing tape so that the wafer and the adhesive layer of the wafer processing tape are cut along a cutting line to obtain a plurality of chips with the adhesive layer;

(g) a step of removing the slack generated in the expanding step by heating and shrinking the portion not overlapping the chip in the expanded tape for wafer processing and maintaining the gap between the chips;

(h) The process of picking up the said chip|tip with the said adhesive bond layer from the adhesive bond layer of the said tape for wafer processing.

effect of invention

According to the present invention, it is possible to provide a tape for wafer processing which has uniform spreadability and pick-up properties suitable for the process of cutting the adhesive layer by expansion, and which is excellent in machinability and pick-up property in the blade dicing process.

Description of drawings

FIG. 1 is a cross-sectional view showing a tape for wafer processing according to an embodiment of the present invention.

2 is a cross-sectional view showing a state in which a surface protection tape is attached to a wafer.

3 is a cross-sectional view for explaining a step of bonding a wafer and a ring frame to the tape for wafer processing of the present invention.

4 is a cross-sectional view illustrating a step of peeling off the surface protection tape from the surface of the wafer.

5 is a cross-sectional view showing a state in which a modified region is formed in a wafer by laser processing.

(a) is a cross-sectional view showing a state in which the tape for wafer processing of the present invention is mounted on an expansion device, and (b) is a cross-sectional view showing a process of cutting a wafer into chips by expansion of the tape for wafer processing, (c) is a cross-sectional view showing the tape for wafer processing, the adhesive layer, and the chip after expansion.

FIG. 7 is a cross-sectional view for explaining a heat shrinking step.

Detailed ways

Hereinafter, embodiments of the present invention will be described in detail based on the drawings.

FIG. 1 is a cross-sectional view showing a tape 10 for wafer processing according to an embodiment of the present invention. In the tape 10 for wafer processing of the present invention, when the wafer is cut into chips by spreading, the adhesive layer 13 is cut along the chips. The tape 10 for wafer processing includes a base film 11, an adhesive layer 12 provided on the base film 11, and an adhesive layer 13 provided on the adhesive layer 12, and the backside of the wafer is bonded to the adhesive layer 13 superior. In addition, each layer may be pre-cut (pre-cut) into a predetermined shape in accordance with the use process and apparatus. In addition, the tape 10 for wafer processing of the present invention may be in a form cut into one wafer, or may be a long sheet formed with a plurality of tapes cut into one wafer and wound into a roll cylindrical shape. Hereinafter, the configuration of each layer will be described. In addition, the material obtained by laminating the base film 11 and the pressure-sensitive adhesive layer 12 is used as the pressure-sensitive adhesive tape 15 .

<Substrate film>

The material of the base film 11 is not particularly limited as long as it has uniform and isotropic expandability in the expanding process. In general, compared with non-crosslinked resins, crosslinked resins have a larger restoring force with respect to stretching, and have larger shrinkage stress when heated in a stretched state after the expansion step. Therefore, the slack generated in the tape after the expansion process can be removed by thermal shrinkage, whereby the tape can be stretched and the distance between the chips can be stably maintained. Therefore, it is preferable to use a crosslinked resin, especially a thermoplastic crosslinked resin, as a base film.

Examples of such thermoplastic crosslinked resins include ionomer resins obtained by crosslinking ethylene-(meth)acrylic acid binary copolymers or ethylene-(meth)acrylic acid-(meth)acrylic acids with metal ions, for example. . They are suitable for the expansion process from the viewpoint of uniform expandability, and are particularly suitable from the viewpoint of generating a strong restoring force when heated due to crosslinking. Although the metal ion contained in the said ionomer resin is not specifically limited, From the viewpoint of low contamination property, the zinc ion with low solubility is especially preferable.

As such thermoplastic cross-linked resin, the base film 11 may have a multilayer structure, which is composed of ethylene-(meth)acrylic acid binary copolymer or ethylene-(meth)acrylic acid-(meth)acrylic acid alkyl ester. The ternary copolymer, which is a main polymer constituent, is composed of an ionomer resin obtained by cross-linking metal ions.

They are suitable for the expansion process from the viewpoint of uniform expandability, and are particularly suitable from the viewpoint of generating a strong restoring force when heated due to crosslinking. Although the metal ion contained in the said ionomer resin is not specifically limited, Zinc, sodium, etc. are mentioned, Of these, zinc is preferable. This is because sodium ions in the ionomer resin move to circuits formed on semiconductor wafers, possibly causing contamination or corrosion with metal impurities. In the alkyl group of the alkyl (meth)acrylate of the ternary copolymer, since the longer the alkyl group, the more flexible the resin, the number of carbon atoms is preferably 1 to 4. Examples of such alkyl (meth)acrylates include methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, methyl acrylate, ethyl acrylate, and propyl acrylate. , Butyl acrylate, etc.

In addition to the above-mentioned ionomer resins, as such thermoplastic cross-linked resins, it is also suitable to use electron beam irradiation to low density polyethylene having a specific gravity of 0.910 or more to less than 0.930 or ultra-low density polyethylene having a specific gravity of less than 0.910. A thermoplastic cross-linked resin that is cross-linked by energy rays. This thermoplastic cross-linked resin has a certain uniform expansion property because both a cross-linked site and a non-cross-linked site exist in the resin. In addition, since a strong restoring force is generated during heating, it is also suitable for removing the slack of the tape generated in the spreading process. By appropriately adjusting the amount of energy ray irradiated to low-density polyethylene or ultra-low-density polyethylene, a resin having sufficient uniform expandability can be obtained.

In addition to the above-mentioned ionomer resins and polyethylene cross-linked by energy rays as thermoplastic cross-linked resins, those cross-linked by irradiating ethylene-vinyl acetate copolymers with energy rays such as electron beams are also suitable. Thermoplastic cross-linked resin. Since this thermoplastic crosslinked resin generates a strong restoring force during heating, it is suitable for removing the slack of the tape generated in the spreading process.

Furthermore, in the example shown in FIG. 1 , the base film 11 is a single layer, but it is not limited to this, and a multilayer structure in which two or more thermoplastic crosslinked resins are laminated may be used. The thickness of the base film 11 is not particularly limited, but is preferably about 50 to 200 μm, more preferably 100 μm to 150μm.

As a method for producing the multilayer base film 11, a conventionally known extrusion method, lamination method, or the like can be used. In the case of using a lamination method, an adhesive may be interposed between layers. As the adhesive, a conventionally known adhesive can be used.

<Adhesive layer>

The pressure-sensitive adhesive layer 12 can be formed by applying the pressure-sensitive adhesive composition on the base film 11 .

The pressure-sensitive adhesive layer 12 constituting the tape 10 for wafer processing of the present invention has retention properties such that no peeling from the pressure-sensitive adhesive layer 13 occurs at the time of dicing, and defects such as chip dispersion are not caused, or it is easy to pick up. What is necessary is just a substance with the characteristics of peeling from the adhesive layer 13 . Specifically, the infrared spectrum of 4000 to 650 cm ⁻¹ based on infrared absorption spectrum analysis in the region of thickness 1 μm from the surface of the adhesive layer 12 on the base film 11 side was compared with that from the adhesive layer 12 and the The matching degree was 95% or less in the infrared spectrum of 4000 to 650 cm ⁻¹ based on the infrared absorption spectrum analysis of the region on the opposite side of the base film 11 from the surface with a thickness of 1 μm.

Since the degree of matching between the surface near the base film of the adhesive layer 12 and the adjacent surface on the opposite side of the base film 11 by an infrared absorption spectrometer is 95% or less, the adhesive on the base film layer 11 side The properties of the layer 12 are different from those of the adhesive layer 12 on the adhesive layer 13 side. The adhesive layer 12 on the substrate film layer 11 side has good adhesion to the substrate, and the adhesive layer 12 on the adhesive layer 13 side has good adhesion. The adhesiveness with the adhesive bond layer 13 is excellent before radiation curing, and no misalignment occurs at the interface between the adhesive bond layer 13 and the adhesive bond layer 12 when it is divided into chips. In addition, not only does the peelability decrease after radiation curing and the pick-up property is excellent, but also when the blade is diced, since it is composed of adhesives of different properties, their cohesive force becomes small, and the chips themselves including the adhesive layer 13 are also Also becomes brittle. As a result, the chips adhering to the adhesive layer 13 at the ends become brittle, so that no excessive force is applied during the pick-up process, and the pick-up performance is good in the blade dicing process. In addition, the vicinity mentioned here means the range within 1 micrometer deep from the surface. In addition, the matching degree of the infrared spectrum is preferably 70% or more. Even if it is less than 70%, there is no problem, but if it is 70% or more, the adhesiveness between the adhesives becomes more favorable, and delamination between layers is less likely to occur during dicing and pickup.

The infrared absorption spectrum analysis of the adhesive layer 12 was performed by the ATR method (Attenuated Total Reflection, attenuated total reflection method) of FT-IR. The cross-section of the pressure-sensitive adhesive layer 12 was exposed, and the infrared spectrum (the spectrum on the base material side) of a region having a thickness of 1 μm from the surface on the side of the base film 11 was obtained.

Moreover, the infrared spectrum (the adhesive layer side spectrum) of the area|region with a thickness of 1 micrometer from the surface on the opposite side to the base film 11 side of the adhesive layer 12 was obtained. Comparing the two infrared spectra, the matching degree is calculated. In the measurement of such a small area, it is preferable to perform the micro-ATR method which combines an infrared microscope and an ATR method.

In addition, the calculation of the matching degree uses the correlation method. Specifically, the slope of the spectrum at each wave number in the graph of the infrared spectrum (vertical axis: intensity, horizontal axis: wave number) of 4000 to 650 cm ⁻¹ is obtained by using the substrate side The correlation coefficient was obtained from the slope of the spectrum and the slope of the spectrum on the adhesive layer side.

In the present invention, the ATR method by FT-IR can be performed in accordance with the ATR method used for the surface analysis of a general solid sample, and can be performed using, for example, an ATR method mode such as NEXUS470 manufactured by Nicolet. Specifically, the following conditions were used, and a sample cell was used: ZnSe prism, number of scans: 100 times, incident angle: 45 degrees, and baseline: a straight line connecting 4000 cm ⁻¹ and 650 cm ⁻¹ . It should be noted that the measurement wavelength in the ATR method is determined by the following mathematical formula 1 to the penetration depth d of the measurement sample, and although it varies according to the refractive index n ₂ of the measurement sample, in general acrylic adhesives It can be approximated by 1.5 in the agent, etc. Therefore, the sample penetration amount d of each incident light can be approximated to be the same among the measurement samples. In addition, the refractive index of the sample can be measured using an Abbe refractometer or the like, and when the refractive index n ₂ of the measurement sample is significantly different from 1.5, the submerged depth d is set to a depth equivalent to the refractive index 1.5 to correct the absorption intensity.

Diving depth d=λ/(2π(sin ² θ−(n ₂ /n ₁ ) ² ) ^1/2 )... Equation (1)

Here, λ represents the measurement wavelength in the ATR crystal, θ represents the incident angle, n ₂ represents the refractive index of the measurement sample, and n ₁ represents the refractive index of the ATR crystal (2.4 in the case of ZnSe).

In the tape for wafer processing of the present invention, the composition of the pressure-sensitive adhesive composition constituting the pressure-sensitive adhesive layer 12 is not particularly limited, but in order to improve pick-up after dicing, an energy ray-curable composition is preferable, and it is preferable to cure A material that is easily peeled off from the adhesive layer 13 afterward. Specifically, in the adhesive composition, as the matrix resin, a resin having a polymer (A) containing 60 mol % or more of an alkane having 6 to 12 carbon atoms can be preferably exemplified. (meth)acrylate of the base chain, and has an energy ray-curable carbon-carbon double bond with an iodine value of 5 to 30. In addition, the energy ray mentioned here means light rays like ultraviolet rays, or ionizing radiation rays, such as an electron beam.

In such a polymer (A), the preferable introduction amount of the energy ray-curable carbon-carbon double bond is 5 to 30 in terms of iodine value, and more preferably 10 to 30. This is because the polymer (A) itself has stability and is easy to manufacture. In addition, when the iodine value is less than 5, the effect of reducing the adhesive force after energy ray irradiation may not be sufficiently obtained, and when the iodine value exceeds 30, the flow of the adhesive after energy ray irradiation may not be obtained. The property becomes insufficient, the gap between the expanded chips of the tape 10 for wafer processing cannot be obtained sufficiently, and the image of each chip may be difficult to recognize at the time of pickup.

Moreover, it is preferable that it is -70 degreeC - 15 degreeC, and, as for the glass transition temperature of a polymer (A), it is more preferable that it is -66 degreeC - -28 degreeC. If the glass transition temperature is −70° C. or higher, the heat resistance against heat generated by energy beam irradiation is sufficient, and if it is 15° C. or lower, chip scattering after dicing of a wafer with a rough surface state can be sufficiently obtained. prevent effect.

The above-mentioned polymer (A) may be produced in any manner, for example, a polymer obtained by mixing an acrylic copolymer with a compound having an energy ray-curable carbon-carbon double bond; or a functional group-containing acrylic copolymer can be used. A polymer obtained by reacting a methacrylic copolymer (A1) having a functional group with a compound (A2) having a functional group capable of reacting with the functional group and having an energy ray-curable carbon-carbon double bond.

Among them, as the functional group-containing methacrylic copolymer (A1), monomers (A1-1) having carbon-carbon double bonds, such as alkyl acrylate or alkyl methacrylate, can be exemplified. A copolymer obtained by copolymerizing with a monomer (A1-2) having a carbon-carbon double bond and having a functional group. Examples of the monomer (A1-1) include hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, and dodecane acrylate having an alkyl chain having 6 to 12 carbon atoms. Alkyl acrylate, decyl acrylate, lauryl acrylate, or as a monomer having an alkyl chain carbon number of 5 or less, amyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, or with They are the same methacrylate etc.

In addition, when there are many components whose carbon number of the alkyl chain is less than 6 in monomer (A1-1), the peeling force of the pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer is increased, and chips may be generated in the pick-up process. In the case of bad condition such as rupture. In addition, if there are many components having more than 12 carbon atoms, it tends to become solid at room temperature, so the workability is poor, and sufficient adhesive force between the pressure-sensitive adhesive layer and the pressure-sensitive adhesive layer cannot be obtained. A situation in which an unsatisfactory state occurs in the cut-off of the adhesive layer.

In addition, as the monomer (A1-1), since the glass transition temperature is lower as the monomer having a large carbon number in the alkyl chain is used, it is possible to prepare a monomer having a desired glass transition temperature by appropriately selecting it. adhesive composition. In addition to the glass transition temperature, a low molecular weight compound having a carbon-carbon double bond such as vinyl acetate, styrene, and acrylonitrile may be blended for the purpose of improving various properties such as compatibility. In this case, these low molecular weight compounds are blended within a range of 5 mass % or less of the total mass of the monomer (A1-1).

On the other hand, as a functional group which the monomer (A1-2) has, a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group, an isocyanate group, etc. can be mentioned, as specific examples of the monomer (A1-2) , acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, ethylene glycol monoacrylic acid can be listed Esters, ethylene glycol monomethacrylates, N-methylol acrylamide, N-methylol methacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-methacrylates -Alkylaminoethyl esters, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride, glycidyl acrylate, glycidyl methacrylate, allyl base glycidyl ether, etc.

In addition, in the compound (A2), as the functional group to be used, when the functional group possessed by the compound (A1) is a carboxyl group or a cyclic acid anhydride group, a hydroxyl group, an epoxy group, an isocyanate group, etc. can be mentioned, and in the case of a hydroxyl group In the case of cyclic acid anhydride group, isocyanate group, etc., in the case of amino group, epoxy group, isocyanate group, etc., in the case of epoxy group, carboxyl group, cyclic group, etc. An acid anhydride group, an amino group, etc. are mentioned as a specific example, and the thing similar to the specific example of a monomer (A1-2) is mentioned. In addition, as the compound (A2), a compound obtained by urethane-forming a part of the isocyanate group of the polyisocyanate compound with a monomer having a hydroxyl group or a carboxyl group and an energy ray-curable carbon-carbon double bond can also be used.

In addition, by leaving unreacted functional groups in the reaction of the compound (A1) and the compound (A2), a desired substance can be produced in terms of properties such as an acid value and a hydroxyl value. If the OH group remains so that the hydroxyl value of the polymer (A) may be 5 to 100, the risk of a pickup error can be further reduced by reducing the adhesive force after energy ray irradiation.

In addition, if the COOH group remains so that the acid value of the polymer (A) is 0.5 to 30, the improvement effect after the restoration of the adhesive layer after expanding the tape for wafer processing of the present invention can be obtained, which is preferable. . Here, if the hydroxyl value of the polymer (A) is too low, the effect of reducing the adhesive force after energy ray irradiation is insufficient, and if it is too high, the fluidity of the adhesive after energy ray irradiation may be impaired. trend. On the other hand, if the acid value is too low, the effect of improving the recovery properties of the tape is insufficient, and if it is too high, the fluidity of the adhesive tends to be impaired.

In the synthesis of the above-mentioned polymer (A), ketone-based, ester-based, alcohol-based, and aromatic-based solvents can be used as the organic solvent when the reaction is carried out by solution polymerization. Propanol, benzyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone, etc. are generally good solvents for acrylic polymers and have a boiling point of 60-120°C. As polymerization initiators, α, α' are usually used - Radical generators such as azobis-series such as azobisisobutyronitrile, and organic peroxides such as benzoyl peroxide. In this case, a catalyst and a polymerization inhibitor can be used in combination as necessary, and a polymer (A) having a desired molecular weight can be obtained by adjusting the polymerization temperature and the polymerization time. In addition, for molecular weight adjustment, it is preferable to use a thiol or carbon tetrachloride-based solvent. It should be noted that this reaction is not limited to solution polymerization, and other methods such as bulk polymerization and suspension polymerization may be used.

The polymer (A) can be obtained as described above, but in the present invention, the molecular weight of the polymer (A) is preferably about 300,000 to 2,000,000. If it is less than 300,000, the cohesive force becomes small, the interface with the adhesive layer tends to be misaligned during expansion, and sufficient tensile force cannot be transmitted to the adhesive layer, resulting in insufficient division of the adhesive layer. In order to prevent this shift as much as possible, the molecular weight is preferably 300,000 or more. In addition, when the molecular weight is more than 2 million, there is a possibility of gelation during synthesis and application. In addition, the molecular weight in this invention means the mass average molecular weight in terms of polystyrene.

Moreover, in the tape 10 for wafer processing of this invention, the resin composition which comprises the adhesive layer 12 may have the compound (B) which functions as a crosslinking agent in addition to the polymer (A). Specifically, it is at least one compound selected from the group consisting of polyisocyanates, melamine-formaldehyde resins, and epoxy resins. These can be used individually or in combination of 2 or more types. The compound (B) reacts with the polymer (A) or the base film, and utilizes the cross-linked structure produced as a result of the reaction, and it is possible to increase the concentration of the polymers (A) and (B) as the main components after the application of the adhesive composition. The cohesion of the binder of the ingredients.

It does not specifically limit as polyisocyanates, For example, 4, 4'- diphenylmethane diisocyanate, toluene diisocyanate, xylylene diisocyanate, 4, 4'- diphenyl ether diisocyanate, 4, 4'- diphenyl ether diisocyanate, 4, 4'- diphenyl ether diisocyanate, 4, Aromatic isocyanates such as 4'-[2,2-bis(4-phenoxyphenyl)propane]diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate , isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate, lysine diisocyanate, lysine triisocyanate, etc. CORONATEL (manufactured by Nippon Polyurethane Co., Ltd., trade name) or the like is used. Specifically, as the melamine-formaldehyde resin, NIKALACMX-45 (manufactured by Sanwa Chemical Co., Ltd., trade name), MELAN (manufactured by Hitachi Chemical Co., Ltd., trade name), etc. can be used. As the epoxy resin, TETRAD-X (manufactured by Mitsubishi Chemical Corporation, trade name) or the like can be used. In the present invention, polyisocyanates are particularly preferably used.

The addition amount of the compound (B) is selected so as to be 0.1 to 10 parts by mass, preferably 0.5 to 5 parts by mass, with respect to 100 parts by mass of the polymer (A). By selecting within this range, an appropriate cohesion force can be obtained, and the crosslinking reaction does not rapidly proceed, so that the workability of blending and coating of the adhesive becomes favorable.

Moreover, in this invention, it is preferable that the photopolymerization initiator (C) is contained in the adhesive layer 12. The photopolymerization initiator (C) contained in the pressure-sensitive adhesive layer 12 is not particularly limited, and conventionally known photopolymerization initiators can be used. For example, benzophenone, 4,4'- dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4,4'-dichlorobenzophenone etc. are mentioned. Acetophenones such as benzophenones, acetophenone, diethoxyacetophenone, etc., anthraquinones such as 2-ethylanthraquinone, tert-butylanthraquinone, 2-chlorothioxanthone, benzoin ethyl base ether, benzoin isopropyl ether, benzyl, 2,4,5-triarylimidazole dimer (Norphine dimer), acridine-based compounds, etc., which can be used alone or in combination 2 more than one species. As an addition amount of a photoinitiator (C), 0.1-10 mass parts is preferable with respect to 100 mass parts of polymer (A), and 0.5-5 mass parts is more preferable.

In addition, a tackifier, an adhesion modifier, a surfactant, etc., or other modifiers, etc. can be blended into the energy-ray-curable adhesive used in the present invention as necessary. In addition, inorganic compound fillers may be appropriately added.

The thickness of the adhesive layer 12 is preferably 1.3 to 16 μm, more preferably 1.5 to 15 μm, further preferably 2 to 10 μm. In addition, the pressure-sensitive adhesive layer 12 may have a structure in which a plurality of layers are laminated.

＜Adhesive layer＞

In the tape for wafer processing of the present invention, the adhesive layer 13 is peeled off from the adhesive layer 12 and adhered to the chip when the chip is picked up after the wafer is bonded and diced. In addition, it is also used as an adhesive for fixing chips on substrates or lead frames. The adhesive layer 13 is not particularly limited as long as it is a film-like adhesive commonly used in wafers, and is preferably an acrylic adhesive, a mixed adhesive of epoxy resin/phenol resin/acrylic resin, or the like. The thickness can be appropriately set, but is preferably about 5 to 150 μm.

In the tape 10 for wafer processing of the present invention, the adhesive layer 13 may be formed by directly or indirectly laminating a film (hereinafter referred to as an adhesive film) thinned in advance on the base film 11 . It is preferable to set the temperature at the time of lamination to the range of 10-100 degreeC, and apply the linear pressure of 0.01-10 N/m. In addition, such an adhesive film may be a film in which the adhesive layer 13 is formed on the spacer. In this case, the spacer may be peeled off after lamination, or it may be used as a cover film of the tape 10 for wafer processing as it is. , peeled off when bonding wafers.

The above-mentioned adhesive film may be laminated on the entire surface of the adhesive layer 12. However, a pre-cut (pre-cut) adhesive film cut into a shape corresponding to the wafer to be bonded may be laminated on the adhesive. on layer 12. In this way, when the adhesive films corresponding to the wafers are laminated, as shown in FIG. 3 , the adhesive layer 13 is present on the part where the wafer W is to be bonded, and the adhesive layer 13 is not present on the part where the ring frame 20 is bonded The adhesive layer 12 is present. In general, since the adhesive layer 13 is difficult to peel from the adherend, by using a pre-cut adhesive film, the ring frame 20 and the adhesive layer 12 can be attached to each other, and an adhesive tape after use can be obtained. It is difficult to produce a degumming effect on the ring frame 20 during peeling.

＜Use＞

The adhesive tape 10 for wafer processing of this invention is an adhesive tape used in the manufacturing method of the semiconductor device which includes at least the expansion process of cutting off the adhesive bond layer 13 by expansion. Therefore, other steps, the order of steps, and the like are not particularly limited. For example, it can be used suitably in the following manufacturing methods (A)-(E) of a semiconductor device.

Manufacturing method of semiconductor device (A)

A method of manufacturing a semiconductor device including the following steps:

(a) the process of laminating the surface protection tape on the surface of the wafer formed with the circuit pattern;

(b) a back grinding process for grinding the back surface of the wafer;

(c) a step of laminating the adhesive layer of the tape for wafer processing to the back surface of the wafer in a state where the wafer is heated to 70 to 80° C.;

(d) a step of peeling off the surface protection tape from the wafer surface;

(e) a step of irradiating laser light along the cut-off line of the wafer to form a modified region caused by multiphoton absorption inside the wafer;

(f) expanding the wafer processing tape so that the wafer and the adhesive layer of the wafer processing tape are cut along a cutting line to obtain a plurality of chips with the adhesive layer;

(g) a step of removing the slack generated in the expanding step by heating and shrinking the portion not overlapping the chip in the expanded tape for wafer processing and maintaining the gap between the chips;

(h) The process of picking up the said chip|tip with the said adhesive bond layer from the adhesive bond layer of the said tape for wafer processing.

Manufacturing method of semiconductor device (B)

A method of manufacturing a semiconductor device including the following steps:

(a) the process of laminating the surface protection tape on the surface of the wafer formed with the circuit pattern;

(b) a back grinding process for grinding the back surface of the wafer;

(c) a step of laminating the adhesive layer of the tape for wafer processing to the back surface of the wafer in a state where the wafer is heated to 70 to 80° C.;

(d) a step of peeling off the surface protection tape from the wafer surface;

(e) a process of irradiating laser light along the cutting line on the surface of the wafer to cut the wafer into chips;

(f) an expanding step of obtaining a plurality of chips with the adhesive layer by expanding the tape for wafer processing to cut the adhesive layer for each chip;

(g) a step of removing the slack generated in the expanding step by heating and shrinking the portion not overlapping the chip in the expanded tape for wafer processing and maintaining the gap between the chips;

(h) The process of picking up the said chip|tip with the said adhesive bond layer from the adhesive bond layer of the said tape for wafer processing.

Manufacturing method of semiconductor device (C)

A method of manufacturing a semiconductor device including the following steps:

(a) the process of laminating the surface protection tape on the surface of the wafer formed with the circuit pattern;

(b) a back grinding process for grinding the back surface of the wafer;

(c) a step of laminating the adhesive layer of the tape for wafer processing to the back surface of the wafer in a state where the wafer is heated to 70 to 80° C.;

(d) a step of peeling off the surface protection tape from the wafer surface;

(e) the process of cutting the wafer along the cutting line with a dicing blade and cutting it into chips;

(f) an expanding step of obtaining a plurality of chips with the adhesive layer by expanding the tape for wafer processing to cut the adhesive layer for each chip;

(g) a step of removing the slack generated in the expanding step by heating and shrinking the portion not overlapping the chip in the expanded tape for wafer processing and maintaining the gap between the chips;

(h) The process of picking up the said chip|tip with the said adhesive bond layer from the adhesive bond layer of the said tape for wafer processing.

Manufacturing method of semiconductor device (D)

A method of manufacturing a semiconductor device including the following steps:

(a) a step of cutting the wafer on which the circuit pattern is formed with a dicing blade to a depth smaller than the thickness of the wafer along a predetermined cutting line;

(b) a process of attaching a surface protection tape on the wafer surface;

(c) grinding the backside of the wafer and cutting it into a backside grinding process;

(d) a step of laminating the adhesive layer of the tape for wafer processing to the back surface of the wafer cut into the chip in a state where the wafer is heated to 70 to 80° C.;

(e) a step of peeling off a surface protection tape from the wafer surface cut into the chip;

(f) an expanding step of obtaining a plurality of chips with the adhesive layer by expanding the tape for wafer processing to cut the adhesive layer for each chip;

(g) in the expanded tape for wafer processing, by heating and shrinking the portion that does not overlap with the chip to remove the slack generated in the expanding step, and maintaining the gap between the chips;

(h) The process of picking up the said chip|tip with an adhesive bond layer from the adhesive bond layer of the said tape for wafer processing.

Manufacturing method of semiconductor device (E)

A method of manufacturing a semiconductor device including the following steps:

(a) the process of laminating the surface protection tape on the surface of the wafer formed with the circuit pattern;

(b) a process of irradiating laser light along the cut-off line of the wafer to form a modified region caused by multiphoton absorption inside the wafer;

(c) a back grinding process for grinding the back surface of the wafer;

(d) a step of laminating the adhesive layer of the tape for wafer processing to the back surface of the wafer in a state where the wafer is heated to 70 to 80° C.;

(e) a step of peeling off the surface protection tape from the wafer surface;

(f) expanding the wafer processing tape so that the wafer and the adhesive layer of the wafer processing tape are cut along a cutting line to obtain a plurality of chips with the adhesive layer;

(g) a step of removing the slack generated in the expanding step by heating and shrinking the portion not overlapping the chip in the expanded tape for wafer processing and maintaining the gap between the chips;

(h) The process of picking up the said chip|tip with the said adhesive bond layer from the adhesive bond layer of the said tape for wafer processing.

＜How to use＞

2-5, the usage method of the tape when the tape 10 for wafer processing of this invention is applied to the manufacturing method (A) of the said semiconductor device is demonstrated. First, as shown in FIG. 2 , on the surface of the wafer W on which the circuit pattern is formed, a surface protection tape 14 for circuit pattern protection containing an ultraviolet curable component in an adhesive is attached, and the back surface of the back surface of the wafer W is ground. grinding process.

After the back grinding process is completed, as shown in FIG. 3 , the wafer W is placed on the heating stage 25 of the wafer mounter with the front side facing down, and then the wafer processing tape 10 is attached to the back surface of the wafer W. . The tape 10 for wafer processing used here is a tape in which an adhesive film that is pre-cut (pre-cut) into a shape corresponding to the wafer W to be bonded is laminated, and the surface to which the wafer W is bonded is exposed. The adhesive layer 12 is exposed around the region of the adhesive layer 13 . The portion of the wafer processing tape 10 where the adhesive layer 13 is exposed is bonded to the back surface of the wafer W, and the portion around the adhesive layer 13 where the adhesive layer 12 is exposed is bonded to the ring frame 20 . At this time, the heating stage 25 is set to 70-80 degreeC, and heat bonding is performed using this.

Then, the wafer W to which the wafer processing tape 10 is bonded is unloaded from the heating stage 25 , and is placed on the suction stage 26 with the wafer processing tape 10 side facing down, as shown in FIG. 4 . After that, from above the wafer W that is adsorbed and fixed on the adsorption stage 26, the energy ray light source 27 is used to irradiate, for example, ultraviolet rays of 1000 mJ/cm ² to the substrate surface side of the surface protection tape 14 to reduce the adhesion of the surface protection tape 14 to the wafer W. After the relay, the surface protective tape 14 is peeled off from the surface of the wafer W.

Then, as shown in FIG. 5 , a portion of the wafer W to be divided with laser light L is irradiated along the cut-off line to form a modified region 32 in the wafer W by multiphoton absorption.

Then, as shown in FIG. 6( a ), the wafer processing tape 10 to which the wafer W and the ring frame 20 are bonded is placed on the stage 21 of the expansion apparatus with the base film 11 side facing down.

Then, as shown in FIG. 6( b ), with the ring frame 20 fixed, the hollow cylindrical ejector member 22 of the expansion device is raised in the A direction to expand (expand) the wafer processing tape 10 . As expansion conditions, the expansion speed is, for example, 5 to 500 mm/sec, and the expansion amount (ejection amount) is, for example, 5 to 25 mm. By stretching the tape 10 for wafer processing in the radial direction of the wafer W in this way, the wafer W is cut into units of chips 34 starting from the modified region 32 . At this time, the adhesive layer 13 can suppress the elongation (deformation) caused by expansion at the portion bonded to the back surface of the wafer W without causing breakage, but at the position between the chips 34, the tension caused by the expansion of the tape concentrates and breaks. . Therefore, as shown in FIG. 6( c ), the adhesive layer 13 is also cut off together with the wafer W. As shown in FIG. Thereby, the plurality of chips 34 with the adhesive layer 13 can be obtained.

Then, as shown in FIG. 7 , a process of returning the ejector member 22 to its original position to remove the slack of the wafer processing tape 10 generated in the previous expansion process is performed to stably hold the chip 34 interval. In this step, for example, the hot air at 90 to 120° C. is blown using the hot air nozzle 29 to the annular heat-shrinking region 28 between the region where the chip 34 exists and the annular frame 20 in the tape 10 for wafer processing, so that the base The material film 11 is heated and shrunk to tighten the tape 10 for wafer processing. After that, the adhesive layer 12 is subjected to energy ray curing treatment, thermal curing treatment, or the like to weaken the adhesive force of the adhesive layer 12 to the adhesive layer 13, and then the chip 34 is pinned from the base film 11 side with a pin. By ejecting, the chip 34 and the adhesive layer 13 are peeled off from the adhesive layer 12, and the chip 34 is picked up.

[Example]

Hereinafter, in order to clarify the effects of the present invention, Examples and Comparative Examples will be described in detail, but the present invention is not limited to these Examples.

[Production of tape for wafer processing]

(1) Preparation of base film

Zinc ionomer (density 0.93 g/cm ³ , zinc ion content 5 mass) of ethylene-methacrylic acid-ethyl methacrylate (mass ratio 7.5:1.4:1.1) ternary copolymer synthesized by radical polymerization method %, chlorine content of less than 1 mass %, Vicat softening point of 55°C, melting point of 85°C) resin beads were melted at 140°C and formed into a 100 μm-thick long film using an extruder to produce a base film.

(2) Preparation of acrylic copolymer

(a-1)

As the acrylic copolymer (A1) having a functional group, a copolymer composed of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate, and acrylic acid and having a mass average molecular weight of 800,000 was prepared. Then, 2-isocyanatoethyl methacrylate was added as a compound (A2) having an energy ray-curable carbon-carbon double bond so that the iodine value was 20, and the glass transition temperature was -60°C. , acrylic copolymer (a-1) with a hydroxyl value of 30 mgKOH/g and an acid value of 5 mgKOH/g.

(a-2)

As an acrylic copolymer (A1) having a functional group, it is composed of n-butyl acrylate, 2-hydroxyethyl acrylate, and acrylic acid. The mass average molecular weight is 700,000, the glass transition temperature is -70°C, and the hydroxyl value is 20 mgKOH/ g, acrylic copolymer (a-2) with an acid value of 3 mgKOH/g.

(a-3)

As the acrylic copolymer (A1) having a functional group, a copolymer composed of lauryl acrylate, 2-hydroxyethyl acrylate, and acrylic acid and having a mass average molecular weight of 800,000 was prepared. Then, 2-isocyanatoethyl methacrylate was added as the compound (A2) having an energy ray-curable carbon-carbon double bond so that the iodine value was 20, and the glass transition temperature was 5°C, The acrylic copolymer (a-3) having a hydroxyl value of 50 mgKOH/g and an acid value of 6 mgKOH/g.

(a-4)

As an acrylic copolymer (A1) having a functional group, it is composed of lauryl acrylate, 2-hydroxyethyl acrylate and acrylic acid, the mass average molecular weight is 800,000, the glass transition temperature is -10°C, and the hydroxyl value is 30 mgKOH/g , the acrylic copolymer (a-4) with an acid value of 3 mgKOH/g.

(3) Preparation of adhesive composition

(d-1)

To the epoxy resin "YDCN-703" (manufactured by Todo Chemical Co., Ltd., trade name, cresol novolak type epoxy resin, epoxy equivalent 210) 30 parts by mass, a phenolic resin as a curing agent for the epoxy resin " MILEX XLC-LL" (manufactured by Mitsui Chemicals Co., Ltd., trade name, phenolic resin) 25 parts by mass, 1.8 parts by mass of "A-1160" (manufactured by Nippon UNICAR Co., Ltd., trade name) as a silane coupling agent, and "A-1160" as a silane coupling agent -189" (manufactured by Japan UNICAR Co., Ltd., trade name) 1.0 parts by mass, "AEROSIL R972" (manufactured by Japan AEROSIL Co., Ltd., trade name) as a silica filler (particle), average particle size: 0.016 μm, specific surface area 120 m ² /g) 22.2 parts by mass of the composition, cyclohexanone was added, stirred and mixed, and then kneaded using a bead mill for an additional 90 minutes.

To this was added “HTR-860P-3” (manufactured by Nagase ChemteX Co., Ltd., product) as an acrylic rubber (high molecular weight component) containing 3 mass % of monomer units derived from glycidyl acrylate or glycidyl methacrylate. name, mass average molecular weight 800,000) 200 parts by mass, and "CURESOL 2PZ-CN" (manufactured by Shikoku Chemical Industry Co., Ltd., trade name, 1-cyanoethyl-2-phenylimidazole) as curing accelerator 0.01 mass parts, stirring and mixing to obtain an adhesive composition (d-1).

<Example 1>

With respect to 100 parts by mass of the acrylic copolymer (a-1), 3 parts by mass of CORONATE L (manufactured by Nippon Polyurethane) was added as a polyisocyanate, and 3 parts by mass of IRGACURE 184 (manufactured by Ciba-Geigy, Japan) was added as a photopolymerization initiator, The obtained mixture was dissolved in ethyl acetate, and the adhesive composition 1 was prepared by stirring.

Next, 6 parts by mass of CORONATE L (manufactured by Nippon Polyurethane) was added as a polyisocyanate with respect to 100 parts by mass of the acrylic copolymer (a-2), and the obtained mixture was dissolved in ethyl acetate, and stirred to prepare an adhesive Composition 2.

Then, the adhesive compositions 1 and 2 were sequentially applied on a release liner composed of a polyethylene terephthalate film subjected to mold release treatment so that the thickness after drying was 5 μm, respectively, and the total It was 10 micrometers, and after drying at 110 degreeC for 3 minutes, it bonded with the base film, and produced the pressure-sensitive adhesive sheet which formed the pressure-sensitive adhesive layer on the base film.

Then, the adhesive composition (d-1) was applied on the release liner composed of the polyethylene terephthalate film subjected to the mold release treatment so that the thickness after drying might be 20 μm, and at 110 It dried for 5 minutes at degree C, and produced the adhesive film which formed the adhesive bond layer on the release liner.

The pressure-sensitive adhesive sheet is cut into the shape shown in FIG. 3 and the like that can be attached to the ring frame so as to cover the opening. Moreover, the adhesive film is cut out into the shape shown in FIG. 3 etc. which can cover the back surface of a wafer. After that, the adhesive layer side of the adhesive sheet and the adhesive layer side of the adhesive film are attached so as to form a portion where the adhesive layer 12 is exposed around the adhesive film as shown in FIG. 3 and the like. combined to produce a tape for wafer processing.

<Example 2>

An adhesive was prepared in the same manner as in the adhesive composition 1 of Example 1, except that the acrylic copolymer (a-3) was used instead of the acrylic copolymer (a-1) as the adhesive composition 3 Composition 3. Using this pressure-sensitive adhesive composition 3, by the same method as in Example 1, the adhesive compositions 3 and 2 were applied to the release liner in this order to produce a tape for wafer processing.

<Example 3>

An adhesive was prepared in the same manner as in the adhesive composition 2 of Example 1, except that the acrylic copolymer (a-4) was used as the adhesive composition 4 instead of the acrylic copolymer (a-2). Composition 4. Using this pressure-sensitive adhesive composition 4, by the same method as in Example 1, the pressure-sensitive adhesive compositions 1 and 4 were applied to the release liner in this order to produce a tape for wafer processing.

<Example 4>

In Example 3, the adhesive composition 3 was used in place of the adhesive composition 1, and by the same method as in Example 1, the adhesive compositions 3 and 4 were applied to the release liner in this order. , to produce tape for wafer processing.

<Example 5>

In Example 1, the adhesive composition 3 was used instead of the adhesive composition 2, and by the same method as in Example 1, the adhesive compositions 1 and 3 were applied to the release liner in this order. , to produce a tape for wafer processing.

<Example 6>

In Example 1, it apply|coated on a release liner so that the thickness after drying might become 15 micrometers without changing each thickness ratio, and the tape for wafer processing was produced.

<Example 7>

In Example 1, it apply|coated on a release liner so that the thickness after drying might become 2 micrometers without changing each thickness ratio, and the tape for wafer processing was produced.

<Example 8>

In Example 1, without changing each thickness ratio, it apply|coated on a release liner so that the thickness after drying might be 1.5 micrometers, and the tape for wafer processing was produced.

<Example 9>

In Example 1, the adhesive composition 1 was coated on the release liner so that the thickness after drying of the adhesive composition 1 was 1 μm and the thickness after drying the adhesive composition 2 was 9 μm to prepare a wafer for processing. adhesive tape.

<Example 10>

In Example 1, the adhesive composition 1 was coated on the release liner so that the thickness after drying of the adhesive composition 1 was 2 μm and the thickness after drying the adhesive composition 2 was 8 μm to prepare a wafer for processing. adhesive tape.

<Example 11>

In Example 1, the adhesive composition 1 was coated on the release liner so that the thickness after drying of the adhesive composition 1 was 3 μm and the thickness after drying of the adhesive composition 2 was 7 μm to prepare a wafer for processing. adhesive tape.

<Example 12>

In Example 1, the adhesive composition 1 was coated on the release liner so that the thickness after drying of the adhesive composition 1 was 4 μm and the thickness after drying of the adhesive composition 2 was 6 μm to prepare a wafer for processing. adhesive tape.

<Example 13>

In Example 1, the adhesive composition 1 was coated on the release liner so that the thickness after drying of the adhesive composition 1 was 0.6 μm and the thickness after drying of the adhesive composition 2 was 0.7 μm to prepare a wafer. Processing tape.

<Example 14>

In Example 1, the adhesive composition 1 was coated on the release liner so that the dried thickness of the adhesive composition 1 was 9 μm and the dried thickness of the adhesive composition 2 was 7 μm, to prepare a wafer for processing. adhesive tape.

<Comparative Example 1>

Adhesive composition 1 was prepared in the same manner as in Example 1. Using only this adhesive composition 1, by the same method as Example 1, a tape for wafer processing was produced.

<Comparative Example 2>

Adhesive composition 2 was formulated in the same manner as in Example 1. Using only this adhesive composition 2, by the same method as Example 1, the tape for wafer processing was produced.

<Comparative Example 3>

Adhesive compositions 1 and 2 were prepared in the same manner as in Example 1. Using this pressure-sensitive adhesive composition, by the same method as in Example 1, the adhesive compositions 2 and 1 were applied to the release liner in this order, to produce a tape for wafer processing.

[Physical properties and evaluation of tapes for wafer processing]

(1) Determination of infrared absorption spectrum

Each tape for wafer processing obtained in the Example and the comparative example was cut|disconnected by the slicer to expose the pressure-sensitive adhesive layer, and the infrared absorption spectrum of the pressure-sensitive adhesive layer in the vicinity of the base film and the pressure-sensitive adhesive layer was measured. At this time, the ATR method mode of NEXUS470 manufactured by Nicolet was used. Specifically, the conditions were set as follows: use of sample cell: ZnSe prism, number of scans: 100 times, incident angle: 45 degrees, baseline: straight line connecting 4000 cm ^-1 and 650 cm ^-1 . (In addition, the penetration depth d of the measurement wavelength can be approximated to the same depth between samples in a normal acrylic adhesive or the like, as described above, and the absorption intensity is corrected to achieve the same depth as necessary.) The agreement rate (matching degree) of the obtained spectrum was calculated|required, and Table 1 shows the result.

It should be noted that the correlation method was used to calculate the matching degree. Specifically, for the slope of the spectrum at each wave number in the graph of the infrared spectrum (vertical axis: intensity, horizontal axis: wave number) of 4000 to 650 cm ⁻¹ , the slope of the spectrum on the substrate side and the adhesive layer side are used. The slope of the spectrum was used to obtain the correlation coefficient.

(2) Determination of truncation rate

The tapes for wafer processing of the Examples and Comparative Examples were subjected to suitability in the following semiconductor processing steps corresponding to the manufacturing method (A) of the semiconductor device described below by the method shown below. test.

(a) A surface protection tape is attached to the wafer surface on which the circuit pattern was formed.

(b) A back grinding step of grinding the back surface of the wafer is performed.

(c) While the wafer is heated to 70° C., the adhesive layer of the wafer processing tape is bonded to the back surface of the wafer, and the ring frame for wafer processing and the adhesive of the wafer processing tape are attached to the back surface of the wafer. The exposed part of the layer without overlapping with the adhesive layer is bonded.

(d) Peeling the surface protection tape from the wafer surface.

(e) Laser light is irradiated along the cut-off line of the wafer to form a modified region by multiphoton absorption inside the wafer.

(f) By extending the tape for wafer processing by 10%, the wafer and the adhesive layer are cut along the cutting line to obtain a plurality of chips with the adhesive layer.

(g) The portion of the tape for wafer processing that does not overlap with the chip (the region where the chip exists and the annular region between the annular frame) is heated to 120° C. to shrink to remove (f) ), the slack that occurs in the expansion process, maintains the gap between the chips.

(h) Picking up the chip with the adhesive layer from the adhesive layer of the tape for wafer processing.

In the step (f), by using DDS-2300 manufactured by DISCO Co., Ltd., the ring frame for dicing attached to the tape for wafer processing is under the expansion ring of DDS-2300 manufactured by DISCO Co., Ltd. A portion of the outer periphery of the wafer bonding portion of the tape for wafer processing that did not overlap with the wafer was pressed against the circular ejector member to expand. In addition, as conditions of the steps (f) and (g), the expansion speed was 300 mm/sec and the expansion amount (ejection amount) was 20 mm. Here, the expansion amount refers to the amount of change in the relative position of the annular frame and the ejector member before and after the depression.

For the tapes for wafer processing of Examples 1 to 14 and Comparative Examples 1 to 3, the cutting of the adhesive layer in the step (f) was evaluated by observing the presence or absence of cutting of 100 chips immediately after the step (g). Rate. The results are shown in Table 1.

(3) Evaluation of Pickup (1)

The pick-up evaluation of the chip|tip cut|disconnected by the stealth dicing method was performed.

After going through the steps (a) to (f), and before the step (h) after the step (g), the surface of the tape for wafer processing on the opposite side to the surface on which the adhesive layer is laminated is applied to the substrate film. , using a metal halide high-pressure mercury lamp, in a nitrogen atmosphere, irradiated with ultraviolet rays under the conditions of 30mW/cm ² and 200mJ/cm ² at 365nm. After that, with respect to 100 chips singulated into 10.0×10.0 mm pieces, in the step (h), a pick-up test by a chip sorting device (manufactured by Canon Machinery, trade name CAP-300II) was performed, and the ejector pin was ejected at the tip of the ejector pin. When the height was 0.3 mm, the product in which the pressure-sensitive adhesive layer peeled off from the pressure-sensitive adhesive layer was held on the chip was regarded as a pick-up successful product, and the pickup success rate was calculated. The results are shown in Table 1.

(4) Evaluation of chip flying in the blade dicing process

After the steps (a) to (d), instead of the step (e), the semiconductor wafer fixed to the ring frame is fully diced along the set predetermined dividing line under the following dicing conditions with a dicing device. .

(dicing condition 1: silicon wafer 50 μm thick)

Dicing machine: manufactured by DISCO, trade name "DFD-340"

Blade: manufactured by DISCO, trade name "27HEEE"

Blade speed: 40000rpm

Scribing speed: 100mm/sec

Scribing depth: 25μm

Cutting Mode: Down Cut

Scribing size: 1.0×1.0mm

At this time, about 100 chips, the number of chips scattered was evaluated.

The evaluation results are shown in Table 1.

(5) Evaluation of Pickup (2)

The evaluation of the pick-up property of the chip|tip cut by the blade dicing method was performed.

After the steps (a) to (d), instead of the step (e), the semiconductor wafer fixed to the ring frame is fully diced along the set predetermined dividing line under the following dicing conditions with a dicing device. .

(dicing condition 1: silicon wafer 50 μm thick)

Dicing machine: manufactured by DISCO, trade name "DFD-340"

Blade: manufactured by DISCO, trade name "27HEEE"

Blade speed: 40000rpm

Scribing speed: 100mm/sec

Scribing depth: 25μm

Cutting Mode: Down Cut

Scribing size: 10.0×10.0mm

Thereafter, the surface of the tape for wafer processing and the surface on the opposite side of the surface on which the adhesive layer was laminated on the base film was subjected to a nitrogen atmosphere at 30 mW/cm ² and 200 mJ/ at 365 nm using a metal halide high pressure mercury lamp. The conditions of cm ² were irradiated with UV light. After that, the diced 100 chips were subjected to a pick-up test by a chip sorting apparatus (manufactured by Canon Machinery, trade name CAP-300II) in the step (h), and the adhesive layer peeled from the adhesive layer The product held on the chip is regarded as a successful pick-up, and the pick-up success rate is calculated.

Moreover, it can be judged that the pick-up success rate is 90% or more as a pass.

(Pickup condition: Silicon wafer 50μm thick)

Chip bonding machine: "CAP-300II" manufactured by Canon Machinery

Number of thimbles: 4

Spacing of thimbles: 9.0×9.0mm

The curvature of the tip end of the thimble: 0.25mm

Thimble ejection amount: 0.30mm

Thimble ejection speed: 300mm/min

Thimble eject hold time: 100ms

The results are shown in Table 1.

[Table 1]

As shown in Table 1, in the pressure-sensitive adhesive layer 12 of the tapes for wafer processing of Examples 1 to 14, the surface of the pressure-sensitive adhesive layer near the base film and the surface near the pressure-sensitive adhesive layer were analyzed by infrared absorption spectroscopy. The matching degree of the infrared spectrum at 4000 to 650 cm ⁻¹ is 95% or less. In addition, in the pressure-sensitive adhesive layer in the vicinity of the pressure-sensitive adhesive layer of Examples 1 to 14, the pressure-sensitive adhesive composition 1 using the acrylic copolymer (a-1) or the acrylic copolymer (a-1) was used. -3) Adhesive composition 3, the tapes for wafer processing of Examples 1 to 8 contain a compound (A) having a radiation-curable carbon-carbon double bond in the molecule, and a compound (A) selected from the group consisting of polyisocyanates and melamine. -A tape for wafer processing of at least one compound (B) of a formaldehyde resin and an epoxy resin.

The tapes for wafer processing of Examples 1 to 14 are obviously tapes for wafer processing which can be easily peeled off from the semiconductor chip without applying stress to the semiconductor chip at the time of pick-up after the blade dicing step, and have suitable properties. The process of cutting the adhesive layer by expansion has uniform expansion properties and excellent pick-up properties.

On the other hand, as shown in Comparative Examples 1 and 2, when the pressure-sensitive adhesive layer was constituted with one pressure-sensitive adhesive composition, the matching degree of infrared absorption spectrum was 100%. From Comparative Examples 1 and 2, it is apparent that when the degree of matching between the surface near the base film of the pressure-sensitive adhesive layer and the surface near the pressure-sensitive adhesive layer is 95% or more in the infrared spectrum at 4000 to 650 cm ⁻¹ by infrared absorption spectrum analysis , chip scattering or poor pick-up may occur during the blade dicing process. In addition, in the pressure-sensitive adhesive layer near the pressure-sensitive adhesive layer of Comparative Example 3, the pressure-sensitive adhesive composition 2 using the acrylic copolymer (a-2) was used, and the acrylic copolymer (a-2) was in the molecular It does not have a radiation curable carbon-carbon double bond. From Comparative Example 3, it is obvious that if the adhesive layer near the release film does not contain the compound (A) having a radiation-curable carbon-carbon double bond in the molecule, and a compound (A) selected from the group consisting of polyisocyanates, melamine-formaldehyde resins, and epoxy resins At least one compound (B) among the resins is excellent in cutoff even if the matching degree in the infrared absorption spectrum of the surface near the base film and the surface near the adhesive layer is 95% or less, but the pickup success rate is deteriorated.

The manufacturing methods B to D of the semiconductor device described above perform the same steps as the expanding step, the heat shrinking step, and the pick-up step in the manufacturing method A of the semiconductor device except that the expanding step is already broken into individual chips. . Further, in the above-described manufacturing method E of the semiconductor device, the step of irradiating the laser light to form the modified region is performed earlier than the manufacturing method A of the semiconductor device. Therefore, it is apparent that the results obtained when the tapes 10 for wafer processing of Examples 1 to 14 and Comparative Examples 1 to 3 were used were equivalent to the results shown in Table 1, and also in the manufacturing methods B to E of the semiconductor device. , it is useful to use the tape 10 for wafer processing of the present invention from the viewpoints of cutting properties, blade dicing properties, and pick-up properties.

Explanation of reference numerals

10 Tape for wafer processing

11 Substrate film

12 Adhesive Layer

13 Adhesive layer

14 Surface protection tape

15 Adhesive tape

20 Ring Box

21 stage

22 Ejection member

25 Heating table

26 Adsorption table

27 Energy ray light source

28 Heat shrink area

29 Hot air nozzle

32 Modified areas

34 chips

L laser

W chip

Claims (10)

1. An adhesive tape, characterized in that, A pressure-sensitive adhesive layer is laminated on one side of the base film, The infrared spectrum of 4000 to 650 cm ⁻¹ based on the infrared absorption spectrum analysis of the region with a thickness of 1 μm from the surface of the pressure-sensitive adhesive layer on the base film side, and the infrared spectrum from the pressure-sensitive adhesive layer and the The infrared spectrum of 4000 to 650 cm ⁻¹ in the region with a thickness of 1 μm from the surface on the opposite side of the base film side by infrared absorption spectrum analysis was obtained by the method of obtaining the correlation coefficient from the slope of the two spectra at each wave number. The matching degree obtained is more than 70% and less than 95%, The pressure-sensitive adhesive layer in a region having a thickness of 1 μm from the surface opposite to the base film side contains: an alkyl (meth)acrylate having an alkyl chain having 6 to 12 carbon atoms and a hydroxyl group by polymerizing An acrylic copolymer obtained by reacting a monomer having a carboxyl group and a monomer having a carboxyl group with a monomer having a radiation-curable carbon-carbon double bond and having a radiation-curable carbon-carbon double bond in the molecule. (A); and polyisocyanates, The ATR method was used for the measurement of the infrared spectrum, and the correlation method was used for the calculation of the matching degree, that is, for the infrared spectrum of 4000 to 650 cm ⁻¹ , the vertical axis is the intensity and the horizontal axis is the wave number. The slope of the spectrum below, the correlation coefficient was calculated|required using the slope of the spectrum on the base film side and the slope of the spectrum on the adhesive layer side. 2. The adhesive tape according to claim 1, wherein The thickness of the adhesive layer is 1.5 to 15 μm. 3. The adhesive tape according to claim 1 or 2, characterized in that, The compound (A) having the radiation-curable carbon-carbon double bond has an iodine value of 0.5 to 30. 4. The adhesive tape according to claim 1 or 2, characterized in that, The molecular weight of the compound (A) having the radiation-curable carbon-carbon double bond is 300,000 to 2,000,000. 5. A tape for wafer processing, characterized in that, The adhesive layer of the adhesive tape according to claim 1 or 2 is laminated with an adhesive layer at least at a portion where the wafer is to be bonded to the adhesive layer, The said adhesive layer is not laminated|stacked on the part to be attached to the dicing frame. 6. A method of manufacturing a semiconductor device, characterized in that: The method of manufacturing a semiconductor device is a method of manufacturing a semiconductor device using the tape for wafer processing described in claim 5, comprising: (a) the process of laminating the surface protection tape on the surface of the wafer formed with the circuit pattern; (b) a back grinding process for grinding the back surface of the wafer; (c) a step of laminating the adhesive layer of the tape for wafer processing to the back surface of the wafer in a state where the wafer is heated to 70 to 80° C.; (d) a step of peeling off the surface protection tape from the wafer surface; (e) a step of irradiating laser light along the cut-off line of the wafer to form a modified region caused by multiphoton absorption inside the wafer; (f) expanding the tape for wafer processing so as to cut the wafer and the adhesive layer of the tape for wafer processing along a cutting line to obtain a plurality of chips with the adhesive layer; (g) a step of removing the slack generated in the expanding step by heating and shrinking the portion not overlapping the chip in the expanded tape for wafer processing and maintaining the gap between the chips; (h) The pick-up process of picking up the said chip|tip with the said adhesive bond layer from the adhesive bond layer of the said tape for wafer processing. 7. A method of manufacturing a semiconductor device, characterized in that: The method of manufacturing a semiconductor device is a method of manufacturing a semiconductor device using the tape for wafer processing described in claim 5, comprising: (a) the process of laminating the surface protection tape on the surface of the wafer formed with the circuit pattern; (b) a back grinding process for grinding the back surface of the wafer; (c) a step of laminating the adhesive layer of the tape for wafer processing to the back surface of the wafer in a state where the wafer is heated to 70 to 80° C.; (d) a step of peeling off the surface protection tape from the wafer surface; (e) a process of irradiating laser light along the cutting line on the surface of the wafer to cut the wafer into chips; (f) an expanding step of obtaining a plurality of chips with the adhesive layer by expanding the tape for wafer processing to cut the adhesive layer for each chip; (g) a step of removing the slack generated in the expanding step by heating and shrinking the portion not overlapping the chip in the expanded tape for wafer processing and maintaining the gap between the chips; (h) The pick-up process of picking up the said chip|tip with the said adhesive bond layer from the adhesive bond layer of the said tape for wafer processing. 8. A method of manufacturing a semiconductor device, characterized in that: The method of manufacturing a semiconductor device is a method of manufacturing a semiconductor device using the tape for wafer processing described in claim 5, comprising: (a) the process of laminating the surface protection tape on the surface of the wafer formed with the circuit pattern; (b) a back grinding process for grinding the back surface of the wafer; (c) a step of laminating the adhesive layer of the tape for wafer processing to the back surface of the wafer in a state where the wafer is heated to 70 to 80° C.; (d) a step of peeling off the surface protection tape from the wafer surface; (e) the process of cutting the wafer along the cutting line with a dicing blade and cutting it into chips; (f) an expanding step of obtaining a plurality of chips with the adhesive layer by expanding the tape for wafer processing to cut the adhesive layer for each chip; (g) a step of removing the slack generated in the expanding step by heating and shrinking the portion not overlapping the chip in the expanded tape for wafer processing and maintaining the gap between the chips; (h) The pick-up process of picking up the said chip|tip with the said adhesive bond layer from the adhesive bond layer of the said tape for wafer processing. 9. A method of manufacturing a semiconductor device, characterized in that: The method of manufacturing a semiconductor device is a method of manufacturing a semiconductor device using the tape for wafer processing described in claim 5, comprising: (a) a step of cutting the wafer on which the circuit pattern is formed with a dicing blade to a depth smaller than the thickness of the wafer along a predetermined cutting line; (b) a process of attaching a surface protection tape on the wafer surface; (c) grinding the backside of the wafer and cutting it into a backside grinding process; (d) a step of attaching the adhesive layer of the tape for wafer processing to the back surface of the wafer cut into the chip in a state where the wafer is heated to 70 to 80° C.; (e) a step of peeling off a surface protection tape from the wafer surface cut into the chip; (f) an expanding step of obtaining a plurality of chips with the adhesive layer by expanding the tape for wafer processing to cut the adhesive layer for each chip; (g) in the expanded tape for wafer processing, by heating and shrinking the portion not overlapping with the chip to remove the slack generated in the expanding step, and maintaining the gap between the chips; (h) The pick-up process of picking up the said chip|tip with an adhesive bond layer from the adhesive bond layer of the said tape for wafer processing. 10. A method of manufacturing a semiconductor device, characterized in that: The method of manufacturing a semiconductor device is a method of manufacturing a semiconductor device using the tape for wafer processing described in claim 5, comprising: (a) the process of laminating the surface protection tape on the surface of the wafer formed with the circuit pattern; (b) a process of irradiating laser light along the cut-off line of the wafer to form a modified region caused by multiphoton absorption inside the wafer; (c) a back grinding process for grinding the back surface of the wafer; (d) a step of laminating the adhesive layer of the tape for wafer processing to the back surface of the wafer in a state where the wafer is heated to 70 to 80° C.; (e) a step of peeling off the surface protection tape from the wafer surface; (f) expanding the tape for wafer processing so as to cut the wafer and the adhesive layer of the tape for wafer processing along a cutting line to obtain a plurality of chips with the adhesive layer; (g) a step of removing the slack generated in the expanding step by heating and shrinking the portion not overlapping the chip in the expanded tape for wafer processing and maintaining the gap between the chips; (h) The process of picking up the said chip|tip with the said adhesive bond layer from the adhesive bond layer of the said tape for wafer processing.