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CN105097776B - 绝缘体上硅器件及其金属间介质层结构和制造方法 - Google Patents

绝缘体上硅器件及其金属间介质层结构和制造方法 Download PDF

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CN105097776B
CN105097776B CN201410178535.8A CN201410178535A CN105097776B CN 105097776 B CN105097776 B CN 105097776B CN 201410178535 A CN201410178535 A CN 201410178535A CN 105097776 B CN105097776 B CN 105097776B
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CN105097776A (zh
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王智勇
王德进
马晶晶
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CSMC Technologies Corp
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Abstract

本发明涉及一种绝缘体上硅器件的金属间介质层结构，包括覆盖金属互连的富硅氧化物层、富硅氧化物层上的氟硅玻璃层、及氟硅玻璃层上的非掺杂硅酸盐玻璃层，所述富硅氧化物层的厚度为700埃±10％。本发明还涉及一种绝缘体上硅器件，以及一种绝缘体上硅器件的金属间介质层的制造方法。本发明厚度较大的富硅氧化物层可以将可动离子俘获在不饱和键上，使得可动离子难以穿过富硅氧化物层，实现了阻挡可动离子的目的。在栅氧化层完整性评估中有良好的表现，避免了可动离子在界面处的聚集造成器件的损坏。

Description

绝缘体上硅器件及其金属间介质层结构和制造方法
技术领域
本发明涉及半导体器件，特别是涉及一种绝缘体上硅器件的金属间介质层结构，一种具有该金属间介质层结构的器件，还涉及一种绝缘体上硅器件的金属间介质层的制造方法。
背景技术
传统的0.18微米逻辑1.8V/3.3V绝缘体上硅(SOI)工艺，后段工艺通常采用0.18微米逻辑工艺。但发明人经实验研究发现，该后段工艺会产生大量可动离子，这些可动离子沿金属引线、通孔(Via)、及金属之间的薄膜传导下去，聚集在Si-SiO2界面、多晶硅(Poly)边缘等处，影响界面态。对于普通体硅工艺，这些可动离子可以从衬底泄放出去，因此该聚集的表现并不明显。但对于SOI工艺，由于埋层氧化的存在，可动离子没法泄放出去，因此对器件的影响较明显，容易造成栅氧(GOX)、结(junction)或多晶硅边缘(Poly edge)的缺陷。在栅氧化层完整性(GOI)评估中，出现GOI fail。
发明内容
基于此，为了解决器件在栅氧化层完整性评估中失效的问题，有必要提供一种新型的绝缘体上硅器件的金属间介质层结构。
一种绝缘体上硅器件的金属间介质层结构，包括覆盖金属互连的富硅氧化物层、富硅氧化物层上的氟硅玻璃层、及氟硅玻璃层上的非掺杂硅酸盐玻璃层，所述富硅氧化物层的厚度为700埃±10％。
在其中一个实施例中，所述富硅氧化物层为原位富硅氧化物层。
在其中一个实施例中，所述非掺杂硅酸盐玻璃层的厚度为2000埃±10％。
在其中一个实施例中，还包括设于所述金属互连和氟硅玻璃层之间的氮化硅层。
还有必要提供一种绝缘体上硅器件。
一种绝缘体上硅器件，包括衬底、衬底上的埋氧层、埋氧层上的阱区、阱区内的源极和漏极结构、阱区上的栅极和层间介质层、层间介质层上的第一金属间介质层以及器件表面的焊盘层，所述第一金属间介质层的结构为权利要求1-4中任意一项所述的金属间介质层结构。
在其中一个实施例中，所述层间介质层包括一层氮化硅。
还有必要提供一种绝缘体上硅器件的金属间介质层的制造方法。
一种绝缘体上硅器件的金属间介质层的制造方法，包括下列步骤：形成金属互连线；淀积富硅氧化物和氟硅玻璃，覆盖所述金属互连线；等离子增强型化学气相淀积氟硅玻璃；进行化学机械抛光，去除多余的氟硅玻璃后形成富硅氧化物层和氟硅玻璃层，所述富硅氧化物层的厚度为700埃±10％；采用等离子增强型化学气相淀积在所述氟硅玻璃层上形成非掺杂硅酸盐玻璃层。
在其中一个实施例中，所述富硅氧化物层为原位富硅氧化物层，所述淀积富硅氧化物和氟硅玻璃步骤是在同一淀积腔体中进行。
在其中一个实施例中，所述非掺杂硅酸盐玻璃层的厚度为2000埃±10％。
在其中一个实施例中，所述形成金属互连线步骤和淀积富硅氧化物和氟硅玻璃步骤之间，还包括淀积形成氮化硅层的步骤。
上述SOI器件，后段工艺中产生的可动离子在经过富硅氧化物层向下方的结构运动时，厚度较大的富硅氧化物层可以将可动离子俘获在不饱和键上，使得可动离子难以穿过富硅氧化物层，实现了阻挡可动离子的目的。从而器件在栅氧化层完整性(GOI)评估中有良好的表现，避免了可动离子在界面处的聚集造成器件的损坏。
附图说明
图1是一实施例中绝缘体上硅器件的剖面示意图；
图2是一实施例中绝缘体上硅器件的金属间介质层的制造方法的流程图；
图3是可动离子被富硅氧化物层阻挡的示意图。
具体实施方式
为使本发明的目的、特征和优点能够更为明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。
图1是一实施例中绝缘体上硅(SOI)器件的剖面示意图，器件包括衬底10，衬底10上的埋氧层20，埋氧层20上的阱区32，阱区32内的源极(漏极)结构34，阱区32上的栅氧层(图1中未示)、栅极42和层间介质(ILD)层40，层间介质层40上的第一金属间介质层50以及器件表面的焊盘(PAD)层70。在本实施例中，层间介质层40中包括一层氮化硅。第一金属间介质层50和焊盘层70之间还可以有一层或多层第二金属间介质层60。其中，第一金属间介质层50采用了新型的IMD结构。
具体的，第一金属间介质层50包括覆盖该层金属互连52的富硅氧化物(siliconrich oxide,SRO)层54、富硅氧化物层54上的氟硅玻璃(FSG)层及氟硅玻璃层上的非掺杂硅酸盐玻璃(USG)层，其中氟硅玻璃层和非掺杂硅酸盐玻璃层在图1中是绘制在一起的。富硅氧化物层54的作用是阻挡可动离子，为了达到该目的其应该足够厚，在本实施例中的厚度为700埃±10％，优选为700埃。
发明人经实验研究发现，富硅氧化物层54本身富含硅不饱和键，在后段工艺中产生的可动离子在经过富硅氧化物层54向下方的结构运动时，厚度较大的富硅氧化物层54可以将可动离子俘获在不饱和键上，使得可动离子难以穿过富硅氧化物层54，如图3所示，实现了阻挡可动离子的目的。从而器件在栅氧化层完整性(GOI)评估中有良好的表现，避免了可动离子在界面处的聚集造成器件的损坏。
在本实施例中，富硅氧化物层54为原位(In-situ)富硅氧化物层，即淀积富硅氧化物和氟硅玻璃步骤是在同一淀积腔体中进行的。相比使用两台机台分别淀积富硅氧化物和氟硅玻璃方案，可以省去两次淀积中间的上下货、产品传送和在线等待的时间，提高生产效率。
在本实施例中，非掺杂硅酸盐玻璃层的厚度为2000埃±10％，优选为2000埃。
在其中一个实施例中，第一金属间介质层50还包括一层氮化硅，其形成于金属互连52与氟硅玻璃层之间。该层氮化硅可以进一步增强对可动离子的阻断效果。
本发明还提供一种绝缘体上硅器件的金属间介质层的制造方法，如图2所示，包括下列步骤：
S210，形成金属互连线。
可以用先淀积再刻蚀的方式在ILD上方形成金属互连线。
S220，淀积富硅氧化物和氟硅玻璃，覆盖金属互连线。
在本实施例中，淀积富硅氧化物和氟硅玻璃步骤是在同一淀积腔体中进行的，从而形成原位(In-situ)富硅氧化物层。在本实施例中，本步骤淀积8000埃厚的氟硅玻璃。
S230，等离子增强型化学气相淀积氟硅玻璃。
步骤S220完成后，再使用等离子增强型化学气相淀积(PECVD)的工艺淀积一层氟硅玻璃。在本实施例中，本步骤淀积11500埃厚的氟硅玻璃。
S240，进行化学机械抛光。
通过CMP将步骤S220和S230中淀积的氟硅玻璃抛光以达到平坦化的效果，在本实施例中是抛光至剩余6500埃厚的氟硅玻璃。抛光完成后得到富硅氧化物层和氟硅玻璃层。
S250，采用等离子增强型化学气相淀积在氟硅玻璃层上形成非掺杂硅酸盐玻璃层。
在本实施例中，淀积的非掺杂硅酸盐玻璃(USG)层厚度为2000埃。
本发明在保证高压/低压区域，场区边缘(Field edge)的测试结构GOI表现良好的情况下，对多晶硅边缘(Poly edge)的GOI有明显改善，特别是对P型多晶硅边缘(P Polyedge)。
在其中一个实施例中，步骤S210和S220之间还包括淀积氮化硅薄膜的步骤。该层氮化硅可以进一步增强对可动离子的阻断效果。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (10)

1.一种绝缘体上硅器件的金属间介质层结构，所述绝缘体上硅器件包括埋氧层，其特征在于，包括覆盖金属互连的富硅氧化物层、富硅氧化物层上的氟硅玻璃层、及氟硅玻璃层上的非掺杂硅酸盐玻璃层，所述富硅氧化物层的厚度为700埃±10％。
2.根据权利要求1所述的绝缘体上硅器件的金属间介质层结构，其特征在于，所述富硅氧化物层为原位富硅氧化物层。
3.根据权利要求1所述的绝缘体上硅器件的金属间介质层结构，其特征在于，所述非掺杂硅酸盐玻璃层的厚度为2000埃±10％。
4.根据权利要求1所述的绝缘体上硅器件的金属间介质层结构，其特征在于，还包括设于所述金属互连和氟硅玻璃层之间的氮化硅层。
5.一种绝缘体上硅器件，包括衬底、衬底上的埋氧层、埋氧层上的阱区、阱区内的源极和漏极结构、阱区上的栅极和层间介质层、层间介质层上的第一金属间介质层以及器件表面的焊盘层，其特征在于，所述第一金属间介质层的结构为权利要求1-4中任意一项所述的金属间介质层结构。
6.根据权利要求5所述的绝缘体上硅器件，其特征在于，所述层间介质层包括一层氮化硅。
7.一种绝缘体上硅器件的金属间介质层的制造方法，所述绝缘体上硅器件包括埋氧层，其特征在于，包括下列步骤：
形成金属互连线；
淀积富硅氧化物和氟硅玻璃，覆盖所述金属互连线；
等离子增强型化学气相淀积氟硅玻璃；
进行化学机械抛光，去除多余的氟硅玻璃后形成富硅氧化物层和氟硅玻璃层，所述富硅氧化物层的厚度为700埃±10％；
采用等离子增强型化学气相淀积在所述氟硅玻璃层上形成非掺杂硅酸盐玻璃层。
8.根据权利要求7所述的绝缘体上硅器件的金属间介质层的制造方法，其特征在于，所述富硅氧化物层为原位富硅氧化物层，所述淀积富硅氧化物和氟硅玻璃步骤是在同一淀积腔体中进行。
9.根据权利要求7所述的绝缘体上硅器件的金属间介质层的制造方法，其特征在于，所述非掺杂硅酸盐玻璃层的厚度为2000埃±10％。
10.根据权利要求7所述的绝缘体上硅器件的金属间介质层的制造方法，其特征在于，所述形成金属互连线步骤和淀积富硅氧化物和氟硅玻璃步骤之间，还包括淀积形成氮化硅层的步骤。
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