CN104949964B - ICP emission spectrophotometer - Google Patents
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- CN104949964B CN104949964B CN201510146338.2A CN201510146338A CN104949964B CN 104949964 B CN104949964 B CN 104949964B CN 201510146338 A CN201510146338 A CN 201510146338A CN 104949964 B CN104949964 B CN 104949964B
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- 238000001514 detection method Methods 0.000 claims abstract description 44
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 42
- 230000003287 optical effect Effects 0.000 claims abstract description 21
- 238000012360 testing method Methods 0.000 claims abstract description 10
- 238000004458 analytical method Methods 0.000 claims description 14
- 238000000889 atomisation Methods 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 description 11
- 238000005259 measurement Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000004075 alteration Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000004445 quantitative analysis Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 206010010071 Coma Diseases 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000003705 background correction Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000013041 optical simulation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/443—Emission spectrometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/06—Scanning arrangements arrangements for order-selection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
- G01N21/68—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence using high frequency electric fields
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
- G01N21/73—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using plasma burners or torches
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
Disclose a kind of ICP emission spectrophotometer.Providing a kind of can change using two-dimensional detection portion and correspondingly pixel used in two-dimensional detection portion with the imaged shape of emergent light and obtain the ICP emission spectrophotometer of accurate intensity.ICP emission spectrophotometer (1) is generally comprised by inductively coupled plasma generating unit (10), light collecting part (20), optical splitter (30), two-dimensional detection portion (40) and control unit (50).Two-dimensional detection portion (40) has the ccd image sensor (41) with the multiple pixels being paved in planar, is imaged on the emergent light being emitted from optical splitter (30) in multiple images to detect to emergent light.Moreover, control unit (50) and the imaged shape of the emergent light as test object correspondingly determine the pixel for being used in the detection of emergent light in multiple pixels.
Description
Technical field
The present invention relates to the ICP of the analysis for the element (such as micro impurity element) for carrying out being included in solution sample
(Inductively Coupled Plasma；Inductively coupled plasma) emission spectrophotometer.
Background technique
Using inductively coupled plasma (ICP) in ICP ICP Atomic Emission Spectrophotometer solution sample carry out atomization or from
Sonization and spectrum analysis is carried out to luminous atom isolychn (spectrum line) at this moment come carry out the quantitative analysis of trace impurity/
Qualitative analysis is ICP emission spectrophotometer.Although moreover, being used in the optical splitter of ICP emission spectrophotometer
The type multi-path type that has the sequence type for the light for gradually detecting each wavelength being split and simultaneously detected, but it has been known that there is
Drive diffraction lattice etc. that the ICP that target wavelength is controlled in the position to detector incidence can shine in sequence type optical splitter
Spectroscopy apparatus (patent document 1).
It is following gradually metered dose apparatus for analyzing luminosity in the patent document 1 shown in Fig. 5: is made using collector lens 101
From being motivated to sample and luminescence imaging that luminous light source 100 issues, entrance slit will transmit through using collimator 103
102 light is guided to the grating 105 driven by grating driving circuit 104, is divided using 106, camera mirror by grating 105
The light of light images in the exit slit 108 driven by exit slit driving circuit 107, using detector 109 narrow from being emitted
The light that seam 108 is got is converted to electric current, is converted to concentration for electric current is exported using data processing circuit 110.According to this structure, public
It has opened since the intensity of light and the position of exit slit 108 are not related without changing, the refractive index dependent on wavelength is also constant
Change, therefore accurately coupled in exit slit 108 using camera mirror 106, resolution ratio is also good.
Existing technical literature.
Patent document.
Patent document 1: tekiaki 59-151027 bulletin.
Summary of the invention
Subject to be solved by the invention
In patent document 1, although keeping exit slit 108 mobile, exit slit 108 is the figurate hole of tool
Thin slab construction, detector 109 is reached by the light in the hole and is detected.It says, is shown absolutely not in Fig. 6 (a) again
In the ideal optical splitter of aberration, shape identical with the hole shape of entrance slit picture be imaged at Exit positions, using by
The wavelength detected shown in wavelength profile determines element, calculates concentration of element using intensity.However, at actual point
In light device, the principal element of spherical aberration, coma aberration etc. can not rule out, as a result, cannot be imaged out by incident light source
Shape as picture.
That is, by as on the exit slit using the entrance slit of 10 μ m 4mm shown in Fig. 6 (b)
Picture illustrated by, the influence of aberration changes according to the angle of diffraction lattice, this become by each wavelength (such as 194nm,
313nm, 435nm) and imaged shape changes (parsing result of optical simulation).When rotating diffraction lattice, as in Fig. 6 (b)
Y direction on move, if the position of exit slit is fixed, become the wavelength shift that can be detected simultaneously, and energy
Enough understand that elongated picture deforms wavelength out.Accordingly, there exist become generating a part by the light in the hole of exit slit,
And the case where damaging measurement intensity.Further, when in order not to damage intensity and the hole of exit slit is made to become larger, become not
It can be carried out fine wavelength separated (wavelength resolution decline).In addition, exit slit there are problems that as follows: determining
After summit, moves slit minutely to carry out the measurement of background positions, therefore generate the deviation of minute, not can be carried out
The correction of the influence of the fluctuation of plasma light etc..
The present invention is the invention completed in view of the above-mentioned origin of an incident, uses two-dimensional detection portion and energy its purpose is to provide a kind of
Enough and wavelength correspondingly changes pixel used in two-dimensional detection portion, obtains wavelength resolution height in the case where not damaging intensity
Measurement result ICP emission spectrophotometer.
Solution for solving the problem
ICP emission spectrophotometer of the invention has: inductively coupled plasma generating unit, by inductively etc.
Gas ions carry out atomization or ionization to the element of analysis object, obtain atom isolychn；Optical splitter shines to the atom
Line is divided to be detected；Two-dimensional detection portion has the multiple pixels being paved in planar, makes to be emitted from the optical splitter
Emergent light be imaged in multiple pixel to be detected to the emergent light；And control unit, with going out as test object
The imaged shape for penetrating light correspondingly determines the pixel that the detection of the emergent light is used in the multiple pixel.
As a mode of ICP emission spectrophotometer of the invention, for example, the control unit according to be used in
The detection intensity of the equal number of not used pixel of the pixel of the detection of the emergent light measures background intensity.
The effect of invention
According to the present invention, it using two-dimensional detection portion, is correspondingly determined with the wavelength of the emergent light as test object multiple
It is used in the pixel of the detection of the emergent light in pixel, therefore wavelength resolution will not be damaged.In addition, can not damage from point
It is detected in the case where the imaging of the emergent light of light device outgoing.It can be by background school simultaneously in addition, being capable of providing one kind
ICP emission spectrophotometer just more accurately to be measured.
Detailed description of the invention
Fig. 1 is the concept map for showing an example of ICP emission spectrophotometer of the invention.
Fig. 2 is the block diagram for showing an example of ICP emission spectrophotometer of the invention.
Fig. 3 is to show the wavelength 194nm obtained using the two-dimensional detection portion of ICP emission spectrophotometer of the invention
The schematic diagram of the acquisition process of wavelength profile.
Fig. 4 is to show the wavelength 435nm obtained using the two-dimensional detection portion of ICP emission spectrophotometer of the invention
The schematic diagram of the acquisition process of wavelength profile.
Fig. 5 is the synoptic diagram for showing the structure of previous ICP emission spectrophotometer.
(a) of Fig. 6 is the synoptic diagram for showing the optical splitter of previous ICP emission spectrophotometer, and (b) of Fig. 6 is to show
The schematic diagram for the picture for utilizing the emulation on the exit slit according to the difference of wavelength to obtain out.
Specific embodiment
Hereinafter, describing the embodiment appropriate of ICP emission spectrophotometer of the invention in detail based on Fig. 1 ~ Fig. 4.
Fig. 1 is the concept map for showing an example of ICP emission spectrophotometer of the invention.
ICP emission spectrophotometer 1 is by inductively coupled plasma generating unit 10, light collecting part 20, optical splitter 30, two dimension
Test section 40 and control unit 50 generally comprise.Inductively coupled plasma generating unit 10 by spray chamber 11, sprayer 12, etc. from
Daughter torch 13, high frequency coil 14, gas control unit 15 and high frequency electric source 16 generally comprise.
Inductively coupled plasma generating unit 10 and light splitting are configured in the light collecting part 20 that atom isolychn carries out optically focused
Between device 30, have entrance window 21, collector lens 22 and entrance slit 23.Atom isolychn is divided to detect
Optical splitter 30 have multiple spherical mirrors 31, diffraction lattice 32 and drive diffraction lattice 32 driving portion 33.Driving method example
Sine gauge mode, DD motor etc. in this way, bind directly with diffraction lattice 32 and are carried out.
Two-dimensional detection portion 40 is the two-dimensional detector for having ccd image sensor 41.Ccd image sensor 41 has
Multiple pixels that planar is paved with, it is multiple that two-dimensional detection portion 40 is imaged on the emergent light for the atom isolychn being emitted from optical splitter 30
Emergent light is detected on image.Although the description of the situation for keeping diffraction lattice 32 mobile, but two-dimensional detection portion 40 can also be made
It is mobile.
Control unit 50 is computer etc., whole to ICP emission spectrophotometer 1 to control, and as test object
The wavelength of emergent light of atom isolychn correspondingly determine to be used in emergent light in multiple pixels of ccd image sensor 41
The pixel of detection.In addition, control unit 50 according to the equal number of not used pixel of the pixel for the detection for being used in emergent light
Detection intensity measure background intensity.
Fig. 2 is the block diagram for showing an example of ICP emission spectrophotometer of the invention.
Argon gas as plasma gas is controlled by gas control unit 15 and is directed to plasma torch 13.Moreover,
By flowing high-frequency current from high frequency electric source 16 to frequency coil 14, so that the argon gas generates sense in the top of plasma torch 13
Answer coupled plasma 18 (following describe is plasma).
On the other hand, the argon gas as carrier gas being supplied in sprayer 12 is sprayed from the front end of sprayer 12
To spray chamber 11, the solution sample 17a of sample container 17 is drawn by the vacuum suction of the argon gas and from sprayer 12
Spray sample in front end.The solution sample 17a sprayed realizes the homogenization of particle and the stabilisation of air-flow in spray chamber 11, by
Gas control unit 15 controls and is directed to plasma torch 13.Moreover, the sample of solution sample 17a divides in plasma 18
Sub (or atom) is heated/motivates and shine.
Solution sample 17a refers to the master sample for known to the concentration containing element and being made calibration curve or wants to know dense
The unknown sample of degree.The solution sample to sample container 17 can be carried out automatically using manually, using automatic sampler etc.
The switching of 17a.
The original of atomization or ionization is carried out by element of the plasma 18 to the analysis object as solution sample 17a
Sub- isolychn be incident on to atom isolychn carry out optically focused light collecting part 20, pass through entrance window 21 and collector lens 22 and pass through into
It penetrates after slit 23, is incident in optical splitter 30.
The atom isolychn being taken into via entrance slit 23 is by by the spherical mirror 31 and diffraction lattice 32 in optical splitter 30
It is divided and is detected, be incident to two-dimensional detector 40, two-dimensional detection portion 40 is in planar using ccd image sensor 41
The multiple pixels being paved with are imaged on the emergent light of atom isolychn in multiple images to detect to emergent light.
Ccd image sensor 41 referred to by the multiple pixels being paved in planar be made of semiconductor chip it is small by
The detection faces that optical element (photodiode) two-dimensionally arranges, each pixel generation signal corresponding with the intensity of the light of light (as
Plain signal) and exported.Picture element signal is sent to control unit 50, and control unit 50 is made the luminescent spectrum of provision wavelengths, according to
The peak wavelength discrimination element for coming across spectrum carries out quantitative analysis according to peak intensity.
The emergent light of the atom isolychn detected carries out data processing in control unit 50 and is resolved, and is sent out according to atom
The wavelength of light (spectrum line) carries out determining for element (such as the micro impurity element) for the analysis object for being included in solution sample 17a
Property analysis and according to the intensity of atom isolychn (spectrum line) carry out element quantitative analysis.Optical splitter 30 and two dimension are passed through
The atom isolychn of test section 40 is amplified by amplification operational part 51, is recorded in control unit 50 as determination data.Amplification fortune
Calculation portion 51 carries out length scanning control to optical splitter 30, and the control of detector voltage, time of integration etc. are carried out to two-dimensional detection portion 40
System.
Fig. 3 and Fig. 4 is the schematic diagram for showing the acquisition process of the wavelength profile using two-dimensional detection portion.
In embodiments, the ccd image sensor 41 arranged to every 30 pixel on direction in length and breadth is shown
Detection faces 41a, detection faces 41a obtain the specific wavelength in summit position light the (imaging of emergent light of analysis result
Shape) S, the predicting shape T in pre-determined pixel and background shape BG.Fig. 3 with 194nm as an example, Fig. 4 with
435nm is as an example.According to the difference of wavelength domain, the shape of analysis imaging S of detection faces 41a is imaged in due to wavelength
Domain and it is different, due to the aberration of optical system, there is also the wavelength for the picture for becoming bowed shape (referring to Fig. 4).
Moreover, the situation for showing driving diffraction lattice 32 to keep analysis imaging S mobile towards (f) from (a), shows acquisition
The case where wavelength profile data.In addition, showing the case where analysis imaging S is Chong Die with predicting shape T in (c), that is, in overlapping
Time point is measured as the position of the summit of wavelength profile, thus implements the quantitative determination at specific wavelength position.
In the case where keeping two-dimensional detection portion 40 mobile, shape, the number of the pixel used control offset same as before.
Only the pixel simulation in the position of the shape of the analysis imaging S of the exit position for each wavelength being split uses
It is obtained in actual intensity.Moreover, control unit 50 and the wavelength of the emergent light as test object correspondingly determine detection faces 41a
Multiple pixels in be used in emergent light detection pixel.That is, with along the shape for the picture being imaged in the same manner as predicting shape T
Mode determine the pixel of exposure, other pixels do not expose.Thus, compared with previous rectangular exit slit, do not deposit
In the deficiency of intensity, wavelength profile shape becomes clear.
Although the decision of the pixel used in each wavelength parses the pre- of the light found out using by optical splitter 30 in advance
Shape T is surveyed, but can also carry out measurement in advance in all pixels of detection faces 41a before practical measurement, according to it
Strength distributing information is found out.
Although movement ((a) ~ (f)) of the analysis imaging S on detection faces 41a is carried out by driving diffraction lattice 32
, but two-dimensional detection portion 40 can also be driven to keep detection faces 41a mobile.As long as the resolution ratio of moving distance be pettiness i.e.
Can, by the measurement of minute movement, the higher wavelength profile shape of resolution ratio can be obtained.It can also make two in quantitative analysis
It ties up test section 40 to stop, obtaining the intensity of set time.Although in addition, can also not make analysis imaging S minutely move and
It is off and measures intensity like that, but mobile mode is made easily to obtain high-resolution wavelength profile.
Further, if measuring the intensity of background shape BG in quantitative analysis, become being able to carry out and in the past cannot
Background measurement while progress.With in summit position simultaneously measured using the identical shape of pixel slightly offset from position
The intensity of the background shape BG set.That is, control unit 50 can be according to the pixel of the predicting shape T with the detection for being used in emergent light
The detection intensity of equal number of not used pixel measures background intensity.Background correction can be carried out simultaneously, and becoming can
Carry out more accurate measurement.
In addition, exposing all pixels in background measurement in advance, selecting arbitrary pixel, thus, it is possible to arbitrary
Position carries out background measurement simultaneously.In addition, being reduced in same area if paying attention to obtaining the accurate intensity of specific wavelength
Pixel number, if paying attention to obtaining intensity, as long as increasing pixel on the contrary.Moreover, because using two-dimensional detection portion 40,
Therefore previous exit slit, photomultiplier tube etc. can also be removed.
In addition, the present invention is not limited to the invention of above-mentioned embodiment, it can suitably be deformed, be improved.
In addition to this, material, shape, size, numerical value, form, the number, allocation position of each structural element in above-mentioned embodiment
As long as of the invention being then arbitrary and being not limited Deng that can reach.For example, in the present embodiment, although being provided with optically focused
Portion 20, but collector lens 22, entrance slit 23 are not required.Furthermore it is also possible to replace collector lens 22 using mirror.
Industrial availability
ICP emission spectrophotometer of the invention is able to carry out further than previous ICP emission spectrophotometer
The light detection of higher precision, is able to carry out adaptation.
Symbol description
1:ICP emission spectrophotometer；10: inductively coupled plasma generating unit；18: inductively coupled plasma；
20: light collecting part；22: collector lens；23: entrance window slit；30: optical splitter；31: spherical mirror；32: diffraction lattice；33: driving
Portion；40: two-dimensional detection portion (test section)；41:CCD imaging sensor；50: control unit；BG: the imaged shape of background wavelength；S:
Analysis imaging (imaged shape of emergent light)；T: predicting shape.
Claims (2)
1. a kind of ICP emission spectrophotometer, has:
Inductively coupled plasma generating unit, by inductively coupled plasma to analysis object element carry out atomization or from
Sonization obtains atom isolychn；
Optical splitter is divided the atom isolychn to detect；
Two-dimensional detection portion has the multiple pixels being paved in planar, the emergent light being emitted from the optical splitter is made to be imaged on this
To be detected to the emergent light in multiple pixels；And
Control unit, the imaged shape with the emergent light as test object is correspondingly from the multiple pixel along prediction shape
The pixel for being used in the detection of emergent light is determined in the pixel that the mode of shape exposes.
2. ICP emission spectrophotometer according to claim 1,
The control unit is strong according to the detection with the equal number of not used pixel of the pixel for the detection for being used in the emergent light
Degree is to measure background intensity.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-072522 | 2014-03-31 | ||
| JP2014072522A JP6316064B2 (en) | 2014-03-31 | 2014-03-31 | ICP emission spectrometer |
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| Publication Number | Publication Date |
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| CN104949964A CN104949964A (en) | 2015-09-30 |
| CN104949964B true CN104949964B (en) | 2019-10-11 |
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| US (1) | US9500524B2 (en) |
| JP (1) | JP6316064B2 (en) |
| CN (1) | CN104949964B (en) |
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| JP6219760B2 (en) * | 2014-03-26 | 2017-10-25 | 株式会社日立ハイテクサイエンス | ICP emission spectrometer |
| JP6762615B2 (en) * | 2017-03-21 | 2020-09-30 | 株式会社日立ハイテクサイエンス | ICP emission spectroscopic analyzer |
| DE102017115660A1 (en) * | 2017-07-12 | 2019-01-17 | Endress+Hauser Conducta Gmbh+Co. Kg | Optical system |
| CN108037076A (en) * | 2017-12-30 | 2018-05-15 | 杭州谱育科技发展有限公司 | Light path system before inductively-coupled plasma spectrometer |
| KR102508505B1 (en) * | 2018-08-27 | 2023-03-09 | 삼성전자주식회사 | Plasma monitoring apparatus and plasma processing system |
| US10436643B1 (en) * | 2018-09-28 | 2019-10-08 | Shimadzu Corporation | Spectrometer and retainer used in same |
| JP7226775B2 (en) * | 2019-01-18 | 2023-02-21 | 国立研究開発法人産業技術総合研究所 | Inductively coupled plasma analysis system and inductively coupled plasma analysis method |
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| JP2012208050A (en) * | 2011-03-30 | 2012-10-25 | Tokyo Electron Ltd | Measuring device and plasma processor |
| JP2014055785A (en) * | 2012-09-11 | 2014-03-27 | Shimadzu Corp | High frequency power source for plasma and icp emission spectrophotometric analyzer using the same |
-
2014
- 2014-03-31 JP JP2014072522A patent/JP6316064B2/en active Active
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2015
- 2015-03-31 US US14/674,052 patent/US9500524B2/en active Active
- 2015-03-31 CN CN201510146338.2A patent/CN104949964B/en active Active
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| Publication number | Publication date |
|---|---|
| CN104949964A (en) | 2015-09-30 |
| US9500524B2 (en) | 2016-11-22 |
| US20150276484A1 (en) | 2015-10-01 |
| JP6316064B2 (en) | 2018-04-25 |
| JP2015194402A (en) | 2015-11-05 |
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