CN104679476B - Noisy-type generating random number device - Google Patents
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- CN104679476B CN104679476B CN201510105707.3A CN201510105707A CN104679476B CN 104679476 B CN104679476 B CN 104679476B CN 201510105707 A CN201510105707 A CN 201510105707A CN 104679476 B CN104679476 B CN 104679476B
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Abstract
A kind of noisy-type generating random number device of present invention offer, the noise current source, including：Cascode current source, resistance, the first common-source amplifier, the first mirror image device, the first CMOS tube, the second CMOS tube, the 3rd CMOS tube, the 4th CMOS tube, the first electric capacity and the second electric capacity；The grid of first CMOS tube and the connection of the grid of the second CMOS tube, so that the drain electrode of the second CMOS tube exports the first electric current；The grid of 3rd CMOS tube and the grid connection of the 4th CMOS tube, so that the drain electrode of the 4th CMOS tube exports the second electric current.The drain electrode of second CMOS tube and the drain electrode of the 4th CMOS tube are connected with current comparator respectively, so that the first electric current and the second electric current separately flow into current comparator, obtain random number series.So as to improve the speed of generation random number.
Description
Technical field
The present invention relates to the communications field, more particularly to a kind of noisy-type generating random number device.
Background technology
Random number sequence can be produced by comparator after generally Resistance Thermal Noise is amplified, i.e., based on Resistance Thermal Noise
True random number (Truly Random Number Generator, abbreviation TRNG).
In the prior art, noise signal is amplified by low-noise amplifier first, then by increasing backfeed loop
Effectively to control the influence of offset voltage and the influence of 1/f noise, and coupling is weakened by the relative operation that subtracts of post-processing module
The influence of noise is closed, so as to further improve the randomness of output sequence.
However, during realizing based on the true random number of Resistance Thermal Noise, due to the imbalance of noise amplifier, substrate
With the coupled interference of power supply, the influence of the finite bandwidth and 1/f noise of amplifier, cause generate true random number speed compared with
It is low.
The content of the invention
The present invention provides a kind of noisy-type generating random number device, and to solve, the speed of generation true random number is relatively low to ask
Topic.
The first aspect of the invention is to provide a kind of noisy-type generating random number device, including：Noise current source and electricity
Comparator is flowed, wherein,
The noise current source, including：Cascode current source, resistance, the first common-source amplifier, the amplification of the second common source
Device, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the first electric capacity and the second electric capacity；
The first end of the resistance respectively with the cascode current source, the grid of first common-source amplifier and institute
State the first end connection of the first electric capacity, the drain electrode of first common-source amplifier respectively with the draining of first metal-oxide-semiconductor, described
The grid of the grid of first metal-oxide-semiconductor and the second metal-oxide-semiconductor connects, and the drain electrode of first metal-oxide-semiconductor and the grid of the second metal-oxide-semiconductor connect
Connect, so that the drain electrode of second metal-oxide-semiconductor exports the first electric current；
The first end of the resistance respectively with the grid of second common-source amplifier and the first end of first electric capacity
Connection, the drain electrode of second common-source amplifier respectively with the draining of the 3rd metal-oxide-semiconductor, first end of second electric capacity, described
The grid of 3rd metal-oxide-semiconductor connects with the grid of the 4th metal-oxide-semiconductor, and the first end of second electric capacity is respectively with the described 3rd
The grid of metal-oxide-semiconductor connects with the grid of the 4th metal-oxide-semiconductor, the drain electrode of the 3rd metal-oxide-semiconductor and the grid of the 4th metal-oxide-semiconductor
Connection, so that the drain electrode of the 4th metal-oxide-semiconductor exports the second electric current；
The drain electrode of second metal-oxide-semiconductor and the drain electrode of the 4th metal-oxide-semiconductor are connected with the current comparator respectively, so that
First electric current and second electric current separately flow into the current comparator, obtain random number series.
Optionally, the cascode current source, in addition to：5th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor；
The drain electrode of 5th metal-oxide-semiconductor connects with the source electrode of the 6th metal-oxide-semiconductor, the drain electrode difference of the 6th metal-oxide-semiconductor
The grid of first end, the first common-source amplifier with the resistance and the first end of first electric capacity are connected.
Optionally, the cascode current source, in addition to：7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor；
The grid of 7th metal-oxide-semiconductor is connected with the grid of the 5th metal-oxide-semiconductor, the grid of the 8th metal-oxide-semiconductor and institute
State the grid connection of the 6th metal-oxide-semiconductor, the grid and the described 5th with the 7th metal-oxide-semiconductor respectively that drains of the 8th metal-oxide-semiconductor
The grid connection of metal-oxide-semiconductor, the drain electrode of the 7th metal-oxide-semiconductor are connected with the source electrode of the 8th metal-oxide-semiconductor.
Optionally, the cascode current source, in addition to：9th metal-oxide-semiconductor, the tenth metal-oxide-semiconductor, the 11st metal-oxide-semiconductor and
12 metal-oxide-semiconductors；
The drain electrode of 8th metal-oxide-semiconductor is connected with the drain electrode of the 9th metal-oxide-semiconductor, the source electrode of the 9th metal-oxide-semiconductor and institute
The drain electrode connection of the tenth metal-oxide-semiconductor is stated, the source electrode of the 11st metal-oxide-semiconductor is connected with the drain electrode of the 12nd metal-oxide-semiconductor, and described the
The grid of nine metal-oxide-semiconductors is connected with the grid of the 11st metal-oxide-semiconductor, grid and the 12nd metal-oxide-semiconductor of the tenth metal-oxide-semiconductor
Grid connection.
Optionally, first common-source amplifier is NMOS tube；Second common-source amplifier is NMOS tube.
Optionally, first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor and the 6th MOS
Pipe is PMOS；9th metal-oxide-semiconductor, the tenth metal-oxide-semiconductor, the 11st metal-oxide-semiconductor and the 12nd metal-oxide-semiconductor are NMOS tube.
Optionally, the current comparator is high speed current comparator.
Noisy-type generating random number device provided by the invention, the noise current source, including：Cascode current source,
Resistance, the first common-source amplifier, the first mirror image device, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the first electricity
Hold and the second electric capacity；The first end of the resistance respectively with the cascode current source, the grid of first common-source amplifier
Pole connects with the first end of first electric capacity, the drain electrode leakage with first metal-oxide-semiconductor respectively of first common-source amplifier
The grid connection of pole, the grid of first metal-oxide-semiconductor and the second metal-oxide-semiconductor, the grid of first metal-oxide-semiconductor and the second metal-oxide-semiconductor
Grid connects, so that the drain electrode of second metal-oxide-semiconductor exports the first electric current；The first end of the resistance is common with described second respectively
The grid of source amplifier connects with the first end of first electric capacity, and the drain electrode of second common-source amplifier is respectively with the 3rd
The grid of the draining of metal-oxide-semiconductor, the first end of second electric capacity, the grid of the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor connects
Connect, the first end of second electric capacity is connected with the grid of the 3rd metal-oxide-semiconductor and the grid of the 4th metal-oxide-semiconductor respectively, institute
The grid for stating the 3rd metal-oxide-semiconductor connects with the grid of the 4th metal-oxide-semiconductor, so that the electricity of drain electrode output second of the 4th metal-oxide-semiconductor
Stream.The drain electrode of second metal-oxide-semiconductor and the drain electrode of the 4th metal-oxide-semiconductor are connected with the current comparator respectively, so that described
First electric current and second electric current separately flow into the current comparator, obtain random number series.Improve generation random number
Speed.
Brief description of the drawings
Fig. 1 is the structural representation of the embodiment of noisy-type generating random number device one of the present invention；
Fig. 2 is the noise current source structural representation of the embodiment of noisy-type generating random number device one of the present invention.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
Part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
Noisy-type generating random number device provided in an embodiment of the present invention can apply to based on Resistance Thermal Noise generation with
During machine number.The noisy-type generating random number device provided below the present embodiment is described in detail.
Fig. 1 is the structural representation of the embodiment of noisy-type generating random number device one of the present invention, and Fig. 2 is noisy-type of the present invention
The noise current source structural representation of the embodiment of generating random number device one, as depicted in figs. 1 and 2, the noisy-type of the present embodiment
Generating random number device, including：Noise current source 1 and current comparator 2, wherein,
The noise current source 1, including：Cascode current source 11, resistance 12, the first common-source amplifier 13, second are common
Source amplifier 14, the first metal-oxide-semiconductor 15, the second metal-oxide-semiconductor 16, the 3rd metal-oxide-semiconductor 17, the 4th metal-oxide-semiconductor 18, the first electric capacity 191 and second
Electric capacity 192；
The first end of the resistance 12 respectively with the cascode current source 11, the grid of first common-source amplifier 13
Pole connects with the first end of first electric capacity 191, the drain electrode of first common-source amplifier 13 respectively with first metal-oxide-semiconductor
The grid connection of 15 drain, the grid of first metal-oxide-semiconductor 15 and the second metal-oxide-semiconductor 16, the drain electrode of first metal-oxide-semiconductor 15 and
The grid connection of second metal-oxide-semiconductor 16, so that the drain electrode of second metal-oxide-semiconductor 16 exports the first electric current InoiseA；The resistance 12
First end be connected respectively with the grid of second common-source amplifier 14 and the first end of first electric capacity 191, described
The drain electrode of two common-source amplifiers 14 respectively with the draining of the 3rd metal-oxide-semiconductor 17, the first end of second electric capacity 192, the described 3rd
The grid of metal-oxide-semiconductor 17 connects with the grid of the 4th metal-oxide-semiconductor 18, and the first end of second electric capacity 192 is respectively with described
The grid of three metal-oxide-semiconductors 17 connects with the grid of the 4th metal-oxide-semiconductor 18, the drain electrode of the 3rd metal-oxide-semiconductor 17 and the 4th MOS
The grid connection of pipe 18, so that the drain electrode of the 4th metal-oxide-semiconductor 18 exports the second electric current InoiseB.Second metal-oxide-semiconductor 16
Drain electrode and the drain electrode of the 4th metal-oxide-semiconductor 18 are connected with the current comparator 2 respectively, so that first electric current and described the
Two electric currents separately flow into the current comparator 2, obtain random number series.
Specifically, bias voltage caused by bias current injection thermal resistance 12Rs：Vbias=Ibias*Rs, biased by adjusting
Electric current Ibias value adjustment bias voltage Vbias size.
Noise voltage vnoise source is mainly the channel noise and resistance 12 of the 5th metal-oxide-semiconductor 111, so main point
Analyse the two devices, the power spectral density of the noise voltage at noise voltage vnoise is：
Wherein, CLFor C1 electric capacity, iRsFor the output current of resistance 12, i2The output current to be drained for the 5th metal-oxide-semiconductor 111,
Gm1 be the 5th metal-oxide-semiconductor 111 mutual conductance, rds2For the output resistance of the 5th metal-oxide-semiconductor 111, rds1For the output electricity of the 6th metal-oxide-semiconductor 112
Resistance, RsFor the resistance of resistance 12；
Further, the root-mean-square value of noise voltage vnoise noise voltage is：
So：
In CLIn the case of=1pF,vnoise6mV with
On.
It is to be understood that theoretical calculation carries out simple pre-estimation with amplifier equivalent input capacitance 1pF, it is contemplated that latter
Level high bandwidth amplifier, need during actual design further to reduce the size of CL electric capacity, above-mentioned estimation is only to resistance and ditch in addition
Road thermal noise does quantitative predication, and actual value can have differences with this value, and reason is to exist posting for 1/f noise and MOS device
Influence be present to end value in raw junction capacity.
Inoise is analyzed as follows：
inoise=vnoise*gm3
General value is as follows：Ibias ≈ 250nA, Rs ≈ 2M Ω, quiescent point close to 0.5V, common-source amplifier across
Gm3 is led with 10uS, amplifier equivalent input capacitance 1pF is estimated that only white noise probably just has 60nA or so, in equivalent inpnt
In the case that electric capacity is less than 1pF, actual value can be much larger than the value.
High-frequency noise filters out link.No matter because resistance noise source, amplifying element or other links in the first link
The noise signals such as the high frequency, middle low frequency and the 1/f noise that are introduced into are in the lump by high broadband common source type amplifier, so amplifier is defeated
Go out can be a variety of noise power spectrums superposition, it is only more powerful for amplifier inputs, it is more in bandwidth in addition
Some changes are understood less.Removed to be compared using current comparator electric current, it is necessary to do high-frequency to the current branch of equal attribute
Operation.
In the present embodiment, the noise current source, including：Cascode current source, resistance, the first common-source amplifier,
First mirror image device, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the first electric capacity and the second electric capacity；The electricity
The first end of resistance respectively with the cascode current source, the grid of first common-source amplifier and first electric capacity
One end connects, the drain electrode of first common-source amplifier respectively with the draining of first metal-oxide-semiconductor, the grid of first metal-oxide-semiconductor
Pole connects with the grid of the second metal-oxide-semiconductor, and the drain electrode of first metal-oxide-semiconductor connects with the grid of the second metal-oxide-semiconductor, so that described second
The drain electrode of metal-oxide-semiconductor exports the first electric current；The first end of the resistance respectively with the grid of second common-source amplifier and described
The first end connection of first electric capacity, the drain electrode of second common-source amplifier respectively with the draining of the 3rd metal-oxide-semiconductor, second electricity
The first end of appearance, the grid of the 3rd metal-oxide-semiconductor connect with the grid of the 4th metal-oxide-semiconductor, the first end of second electric capacity
It is connected respectively with the grid of the 3rd metal-oxide-semiconductor and the grid of the 4th metal-oxide-semiconductor, the drain electrode of the 3rd metal-oxide-semiconductor and described
The grid connection of 4th metal-oxide-semiconductor, so that the drain electrode of the 4th metal-oxide-semiconductor exports the second electric current.The drain electrode of second metal-oxide-semiconductor and
The drain electrode of 4th metal-oxide-semiconductor is connected with the current comparator respectively, so that first electric current and second electric current point
The current comparator is not flowed into, obtains random number series.Improve the speed of generation random number.
On the basis of above-described embodiment, cascode current source 11, it can also include：5th metal-oxide-semiconductor 111 and the 6th
Metal-oxide-semiconductor 112；
The drain electrode of 5th metal-oxide-semiconductor 111 connects with the source electrode of the 6th metal-oxide-semiconductor 112, the 6th metal-oxide-semiconductor 112
The first end of the drain electrode first end with the resistance 12, the grid of the first common-source amplifier 13 and first electric capacity 191 respectively
Connection.
Further, the cascode current source 11, in addition to：7th metal-oxide-semiconductor 113, the 8th metal-oxide-semiconductor 114,
The grid of 7th metal-oxide-semiconductor 113 is connected with the grid of the 5th metal-oxide-semiconductor 111, the 8th metal-oxide-semiconductor 114
Grid is connected with the grid of the 6th metal-oxide-semiconductor 112, the drain electrode of the 8th metal-oxide-semiconductor 114 respectively with the 7th metal-oxide-semiconductor 113
Grid connected with the grid of the 5th metal-oxide-semiconductor 111, the drain electrode and the 114 of the 8th metal-oxide-semiconductor of the 7th metal-oxide-semiconductor 113
Source electrode connects.
On the basis of above-described embodiment, the cascode current source 11, it can also include：9th metal-oxide-semiconductor 115,
Ten metal-oxide-semiconductors 116, the 11st metal-oxide-semiconductor 117 and the 12nd metal-oxide-semiconductor 118；
The drain electrode of 8th metal-oxide-semiconductor 114 is connected with the drain electrode of the 9th metal-oxide-semiconductor 115, the 9th metal-oxide-semiconductor 115
Source electrode is connected with the drain electrode of the tenth metal-oxide-semiconductor 116, source electrode and the 12nd metal-oxide-semiconductor 118 of the 11st metal-oxide-semiconductor 117
Drain electrode connection, the grid of the 9th metal-oxide-semiconductor 115 is connected with the grid of the 11st metal-oxide-semiconductor 117, the tenth metal-oxide-semiconductor
116 grid is connected with the grid of the 12nd metal-oxide-semiconductor 118.
Optionally, the first common-source amplifier in the present embodiment is NMOS tube；Second common-source amplifier is NMOS tube.
Optionally, first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor and the 6th MOS
Pipe is that PMOS, the 9th metal-oxide-semiconductor, the tenth metal-oxide-semiconductor, the 11st metal-oxide-semiconductor and the 12nd metal-oxide-semiconductor are NMOS tube.
Optionally, the current comparator is high speed current comparator.
In the present embodiment, to Resistance Thermal Noise (white noise) amplify, though for resistance noise source, amplifying element or
The noise signals such as high frequency, middle low frequency and 1/f noise that other links are introduced into by high broadband common source type amplifier, obtain width in the lump
Larger noise current signal is spent, is afterwards filtered the high frequency white noise signal of wherein one branch road by a High frequency filter link
Fall, realize digital quantization finally by electric current comparing element, obtain the random number of high-speed.It can be seen that the present invention is not relying on
It is of the invention in other words that requirement is only made to high bandwidth in the realization of low noise high bandwidth amplifier, by filtering out high-frequency noise ring
Section removes the radio-frequency component of wherein one branch road, and another way does not remove, and is compared the two-way electric current.In addition, phase
For voltage comparator, current comparator is smaller on misalignment rate, so in the larger feelings of high frequency white noise currents discharge amplitude
Under condition, even if not comparing by technologies such as the Offset controls for requiring higher feedback only by current comparator noise current,
It is also easier to obtain the quantization output of low imbalance.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations；To the greatest extent
The present invention is described in detail with reference to foregoing embodiments for pipe, it will be understood by those within the art that：Its according to
The technical scheme described in foregoing embodiments can so be modified, either which part or all technical characteristic are entered
Row equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme.
Claims (7)
- A kind of 1. noisy-type generating random number device, it is characterised in that including：Noise current source and current comparator, wherein,The noise current source, including：Cascode current source, resistance, the first common-source amplifier, the second common-source amplifier, One metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the first electric capacity and the second electric capacity；The first end of the resistance respectively with the cascode current source, the grid of first common-source amplifier and described The first end connection of one electric capacity, the drain electrode of first common-source amplifier respectively with the draining of first metal-oxide-semiconductor, described first The grid of the grid of metal-oxide-semiconductor and the second metal-oxide-semiconductor connects, and the drain electrode of first metal-oxide-semiconductor connects with the grid of the second metal-oxide-semiconductor, with The drain electrode of second metal-oxide-semiconductor is set to export the first electric current；The first end of the resistance is connected with the grid of second common-source amplifier and the first end of first electric capacity respectively, The drain electrode of second common-source amplifier respectively with the draining of the 3rd metal-oxide-semiconductor, the first end of second electric capacity, the described 3rd The grid of metal-oxide-semiconductor connects with the grid of the 4th metal-oxide-semiconductor, the first end of second electric capacity respectively with the 3rd metal-oxide-semiconductor Grid connected with the grid of the 4th metal-oxide-semiconductor, the drain electrode of the 3rd metal-oxide-semiconductor connects with the grid of the 4th metal-oxide-semiconductor, So that the drain electrode of the 4th metal-oxide-semiconductor exports the second electric current；The drain electrode of second metal-oxide-semiconductor and the drain electrode of the 4th metal-oxide-semiconductor are connected with the current comparator respectively, so that described First electric current and second electric current separately flow into the current comparator, obtain random number series.
- 2. device according to claim 1, it is characterised in that the cascode current source, in addition to：5th metal-oxide-semiconductor With the 6th metal-oxide-semiconductor；The drain electrode of 5th metal-oxide-semiconductor connects with the source electrode of the 6th metal-oxide-semiconductor, the drain electrode of the 6th metal-oxide-semiconductor respectively with institute State the first end of resistance, the grid of the first common-source amplifier connects with the first end of first electric capacity.
- 3. device according to claim 2, it is characterised in that the cascode current source, in addition to：7th metal-oxide-semiconductor, 8th metal-oxide-semiconductor；The grid of 7th metal-oxide-semiconductor is connected with the grid of the 5th metal-oxide-semiconductor, the grid of the 8th metal-oxide-semiconductor and described the The grid connection of six metal-oxide-semiconductors, the drain grid with the 7th metal-oxide-semiconductor and the 5th metal-oxide-semiconductor respectively of the 8th metal-oxide-semiconductor Grid connection, the drain electrode of the 7th metal-oxide-semiconductor is connected with the source electrode of the 8th metal-oxide-semiconductor.
- 4. device according to claim 3, it is characterised in that the cascode current source, in addition to：9th metal-oxide-semiconductor, Tenth metal-oxide-semiconductor, the 11st metal-oxide-semiconductor and the 12nd metal-oxide-semiconductor；The drain electrode of 8th metal-oxide-semiconductor is connected with the drain electrode of the 9th metal-oxide-semiconductor, the source electrode of the 9th metal-oxide-semiconductor and described the The drain electrode connection of ten metal-oxide-semiconductors, the source electrode of the 11st metal-oxide-semiconductor are connected with the drain electrode of the 12nd metal-oxide-semiconductor, and the described 9th The grid of metal-oxide-semiconductor is connected with the grid of the 11st metal-oxide-semiconductor, grid and the 12nd metal-oxide-semiconductor of the tenth metal-oxide-semiconductor Grid connects.
- 5. according to the device described in claim any one of 1-4, it is characterised in that first common-source amplifier is NMOS tube； Second common-source amplifier is NMOS tube.
- 6. device according to claim 4, it is characterised in that first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, Four metal-oxide-semiconductors, the 5th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor are PMOS；9th metal-oxide-semiconductor, the tenth metal-oxide-semiconductor, the 11st metal-oxide-semiconductor and the tenth Two metal-oxide-semiconductors are NMOS tube.
- 7. device according to claim 6, it is characterised in that the current comparator is high speed current comparator.
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