CN104576705B - A kind of array base palte and preparation method, display device - Google Patents
A kind of array base palte and preparation method, display device Download PDFInfo
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- CN104576705B CN104576705B CN201510041447.8A CN201510041447A CN104576705B CN 104576705 B CN104576705 B CN 104576705B CN 201510041447 A CN201510041447 A CN 201510041447A CN 104576705 B CN104576705 B CN 104576705B
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Abstract
The invention discloses a kind of array base palte and preparation method, display device, under conditions of existing process difficulty is not increased, to reduce the voltage drop between array base palte viewing area and non-display area, improves display quality.The array base palte, including underlay substrate, underlay substrate is divided into viewing area and non-display area, thin film transistor (TFT) is provided with underlay substrate, flatness layer is provided with thin film transistor (TFT), organic luminous layer is provided with flatness layer, array base palte also includes the Top electrode being arranged on organic luminous layer, and wherein at least part is more than the thickness of the Top electrode positioned at viewing area positioned at the thickness of the Top electrode of non-display area.
Description
Technical field
The present invention relates to organic light emitting display technical field, more particularly to a kind of array base palte and preparation method, display dress
Put.
Background technology
Prior art is used as using thin film transistor (TFT) as control element, Organic Light Emitting Diode (Organic Light
Emitting Diode, OLED) it is that the Display Technique that light launches medium has fine definition, wide viewing angle, easily realizes bending flexibility
Change the advantages such as display to be widely used.
The content of the invention
The embodiments of the invention provide a kind of array base palte and preparation method, display device, not increase existing work
Under conditions of skill difficulty, the voltage drop between array base palte viewing area and non-display area is reduced, improves display quality.
A kind of array base palte provided in an embodiment of the present invention, including underlay substrate, the underlay substrate include viewing area and
Non-display area, thin film transistor (TFT), organic luminous layer are provided with the underlay substrate and is arranged on the organic luminous layer
Top electrode, wherein at least part positioned at the non-display area the Top electrode thickness be more than positioned at the viewing area institute
State the thickness of Top electrode.
By array base palte provided in an embodiment of the present invention, because array base palte includes the upper electricity that is arranged on organic luminous layer
Pole, wherein at least part are more than the upper electricity positioned at the viewing area positioned at the thickness of the Top electrode of the non-display area
The thickness of pole, the i.e. embodiment of the present invention set the thickness of upper electrode layer using subregion, in the situation for the light transmittance for ensureing viewing area
Under, the resistivity of the Top electrode of non-display area is effectively reduced, reduces the generation of electrical contact area's loose contact situation, so as to
The making yield of enough uniformitys and product for improving display.
It is preferred that the thin film transistor (TFT) includes：Semiconductor active layer, the grid being sequentially located on the underlay substrate are exhausted
Edge layer, grid, insulating barrier, source electrode and drain electrode；Or,
The thin film transistor (TFT) includes：Grid, gate insulator, the semiconductor active being sequentially located on the underlay substrate
Layer, source electrode and drain electrode.
So, thin film transistor (TFT) can use top-gate type structure, can also use bottom-gate type configuration, in actual production more
Add flexible, conveniently.
It is preferred that it is provided with cushion between the underlay substrate and the thin film transistor (TFT).
So, the setting of cushion can play a part of flat substrate substrate, while can prevent in underlay substrate
Foreign atom is diffused into thin film transistor (TFT).
It is preferred that also including the flatness layer and pixel electrode being arranged on underlay substrate, the flatness layer is positioned at described thin
Between film transistor and organic luminous layer, the pixel electrode is located on the flatness layer, and passes through the via on flatness layer
The source electrode or drain electrode connection, the organic luminous layer exposed with thin film transistor (TFT) is located on the pixel electrode.
It is preferred that also including auxiliary electrode, the auxiliary electrode is located at the non-display area of underlay substrate, with pixel electricity
Pole is located at same layer, and the Top electrode is located on the auxiliary electrode and electrically connected with the auxiliary electrode, positioned at the auxiliary
The thickness of Top electrode on electrode is more than the thickness of the Top electrode above the pixel electrode.
So, the setting of auxiliary electrode can further reduce the resistivity of Top electrode.
It is preferred that Top electrode is anode, or the Top electrode is negative electrode.
So, it can both apply positive voltage to Top electrode, negative voltage can also be applied to Top electrode, in actual process
During it is more convenient, simple.
It is preferred that the material of the Top electrode is the monofilm of tin indium oxide or indium zinc oxide, or it is tin indium oxide and oxygen
Change the composite membrane of indium zinc.
So, the material selection of Top electrode is more convenient, simple.
The embodiment of the present invention additionally provides a kind of display device, and the display device includes above-mentioned array base palte.
Because the display device of the embodiment of the present invention includes above-mentioned array base palte, therefore the display dress of the embodiment of the present invention
The display uniformity put is preferable.
The embodiment of the present invention additionally provides a kind of preparation method of array base palte, includes the making, organic of thin film transistor (TFT)
The making of luminescent layer and the making of Top electrode, in the making of the Top electrode, make to be at least partially disposed at battle array by patterning processes
The thickness of the Top electrode of row substrate non-display area is more than the thickness of the Top electrode positioned at array base palte viewing area.
By the preparation method of array base palte provided in an embodiment of the present invention, because the preparation method makes obtained Top electrode
The thickness for being at least partially disposed at array base palte non-display area is more than the thickness for being located at array base palte viewing area, therefore the present invention is implemented
Example makes obtained Top electrode in the case where ensureing the light transmittance of viewing area, can be effectively reduced the Top electrode of non-display area
Resistivity, reduce the generation of electrical contact area's loose contact situation, so as to improve the uniformity that array base palte show and
The making yield of product.
It is preferred that the patterning processes make the Top electrode using intermediate tone mask plate or gray tone mask plate, specifically
Including：
Transparent conductive film is formed on organic luminous layer；
Photoresist is formed on the transparent conductive film, is exposed by intermediate tone mask plate or gray tone mask plate
Light, development, form photoresist and area, photoresist part of footprint and the unglazed photoresist area of coverage is completely covered, wherein, the photoresist
The non-display area that area corresponds to array base palte is completely covered, photoresist part of footprint corresponds to the viewing area of array base palte；
By etching, the transparent conductive film of the unglazed photoresist area of coverage is removed, and remove photoresist part of footprint
Photoresist, expose the transparent conductive film of photoresist part of footprint；
By etching, the transparent conductive film of the segment thickness exposed is removed, is formed and is shown positioned at array base palte
The Top electrode in area；
Remaining photoresist is removed, the Top electrode positioned at array base palte non-display area is formed, positioned at the upper of the non-display area
The thickness of electrode is more than the thickness of the Top electrode positioned at the viewing area.
So, Top electrode is made using intermediate tone mask plate or gray tone mask plate, it is more square during actual fabrication
Just, simply.
Brief description of the drawings
Fig. 1 is a kind of cross section structure schematic diagram of array base palte；
Fig. 2 is the cross section structure schematic diagram of another array base palte for reducing Top electrode resistivity；
Fig. 3 is the cross section structure schematic diagram of the array base palte of another reduction Top electrode resistivity；
Fig. 4 is a kind of cross section structure schematic diagram of array base palte provided in an embodiment of the present invention；
Fig. 5 is the cross section structure schematic diagram of another array base palte provided in an embodiment of the present invention；
Fig. 6 is the cross section structure schematic diagram of the array base palte provided in an embodiment of the present invention for being provided with auxiliary electrode；
Fig. 7 is the method flow diagram that a kind of array base palte provided in an embodiment of the present invention makes Top electrode；
Fig. 8 is that a kind of array base palte provided in an embodiment of the present invention deposits the cross section structure signal after transparent conductive film
Figure；
Fig. 9 is the cutting when transparent conductive film provided in an embodiment of the present invention to Fig. 8 depositions carries out lithographic process
Face structural representation.
Embodiment
As shown in figure 1, the primary structure of array base palte includes：Underlay substrate 10, the buffering being arranged on underlay substrate 10
Layer 11, the semiconductor active layer 12 being arranged on cushion 11, the gate insulator 13 being arranged on semiconductor active layer 12, if
The grid 14 on gate insulator 13 is put, the insulating barrier 15 being arranged on grid 14, the source electrode 16 being arranged on insulating barrier 15
With drain electrode 17, the flatness layer 18 being arranged on source electrode 16 and drain electrode 17, the pixel electrode 19 being arranged on flatness layer 18, it is arranged on
Organic light emission confining layers 110 on pixel electrode 19, the organic luminous layer 111 being arranged in organic light emission confining layers 110, set
Top electrode 112 on organic luminous layer 111.
Prior art is in order to improve the light utilization efficiency of organic luminous layer 111, the generally use electrically conducting transparent material of Top electrode 112
Material, and transparent conductive material typically has higher resistivity than single conductive metallic material；In addition, project display to improve
The display brightness of screen, it is also necessary to increase the light transmittance of transparent conductive material, then transparent lead is thinned in generally use for the increase of light transmittance
The mode of electric layer is realized.The reduction of transparency conducting layer thickness further increases its resistivity, in large-sized display screen,
Larger voltage drop can occur between viewing area and non-display area, influence the emission current injection of luminescent layer, cause display quality
Deterioration.
As shown in Fig. 2 in order to reduce the voltage drop between the viewing area of array base palte and non-display area, increase in non-display area
Add layer of metal routing layer 20, metal routing layer 20 electrically connects with Top electrode 112, reaches reduction resistance, and then reduce viewing area
The purpose of voltage drop between non-display area.In addition, as shown in figure 3, it is connected with Top electrode 112 using electrically conductive ink 30
Mode reduces resistance, and then reduces the voltage drop between viewing area and non-display area.
In summary, larger voltage drop can occur between array base palte viewing area and non-display area, influence luminescent layer
It is luminous, cause display quality to deteriorate；At present, it is necessary to newly increase conductive gold when reducing the voltage between viewing area and non-display area
Belong to routing layer and electrically conductive ink, add manufacturing process steps, improve manufacture craft difficulty, simultaneously as what is newly increased leads
Electric metal routing layer can occupy viewing area, reduce the aperture opening ratio of display, be unfavorable for the making of high-quality display screen.
The embodiments of the invention provide a kind of array base palte and preparation method, display device, not increase existing work
Under conditions of skill difficulty, the voltage drop between array base palte viewing area and non-display area is reduced, improves display quality.
In order that the object, technical solutions and advantages of the present invention are clearer, the present invention is made below in conjunction with accompanying drawing into
One step it is described in detail, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole implementation
Example.Based on the embodiment in the present invention, what those of ordinary skill in the art were obtained under the premise of creative work is not made
All other embodiment, belongs to the scope of protection of the invention.
The array base palte of specific embodiment of the invention offer is provided below in conjunction with the accompanying drawings.
As shown in figure 4, the specific embodiment of the invention provides a kind of array base palte, including underlay substrate 10, underlay substrate
10 are divided into viewing area 41 and non-display area 42, and thin film transistor (TFT) 43 is provided with underlay substrate 10, is set on thin film transistor (TFT) 43
Organic light emission confining layers 110 are equipped with, organic luminous layer 111 is provided with organic light emission confining layers 110, the array base palte also includes
The Top electrode 112 being arranged on organic luminous layer 111, wherein at least thickness of the part positioned at the Top electrode 112 of non-display area 42
More than the thickness of the Top electrode 112 positioned at viewing area 41.Top electrode in the specific embodiment of the invention can be used as organic light emission
The anode of diode, can also be as the negative electrode of Organic Light Emitting Diode, i.e., both can be to Top electrode during actual process
Apply positive voltage, negative voltage can also be applied to Top electrode.Preferably, in the specific embodiment of the invention Top electrode material
For tin indium oxide or the monofilm of indium zinc oxide, or it is tin indium oxide and the composite membrane of indium zinc oxide.
Preferably, the specific embodiment of the invention is provided with cushion, cushion between underlay substrate and thin film transistor (TFT)
Setting can play a part of flat substrate substrate, while can prevent the foreign atom in underlay substrate be diffused into film crystalline substance
In body pipe.
Thin film transistor (TFT) in the specific embodiment of the invention can be the thin film transistor (TFT) of top gate structure, or bottom gate
The thin film transistor (TFT) of structure, can also be the thin film transistor (TFT) of other structures certainly, the specific embodiment of the invention is not to film
The concrete structure of transistor is construed as limiting.
Preferably, the thin film transistor (TFT) in the specific embodiment of the invention includes：The semiconductor being sequentially located on underlay substrate
Active layer, gate insulator, grid, insulating barrier, source electrode and drain electrode；Or, the thin film transistor (TFT) bag in the specific embodiment of the invention
Include：Grid, gate insulator, semiconductor active layer, source electrode and the drain electrode being sequentially located on underlay substrate.
Specifically, as shown in figure 4, the thin film transistor (TFT) 43 in the specific embodiment of the invention is included on underlay substrate 10
Semiconductor active layer 12, the gate insulator 13 on semiconductor active layer 12, the grid on gate insulator 13
14, the insulating barrier 15 on grid 14, source electrode 16 and drain electrode 17 on insulating barrier 15.The specific embodiment of the invention with
, can be direct if the work function of the material of source electrode 16 is smaller in the case that the layer of the bottom surface of organic luminous layer 111 contact is as negative electrode
As cathode layer, organic luminous layer 111 is directly connected to source electrode 16, at this moment need not make pixel electrode so that manufacture craft
It is simpler.Organic light emission confining layers 110 in the specific embodiment of the invention play a part of to limit the position of organic luminous layer 111.
Specifically, as shown in figure 5, the array base palte in the specific embodiment of the invention also includes being arranged on flatness layer 18
Pixel electrode 19, the source electrode 16 that pixel electrode 19 is exposed by the via etched on flatness layer 18 with thin film transistor (TFT) connect
Connect, organic luminous layer 111 is located on pixel electrode 19.Lured by the electric signal being applied on pixel electrode 19 and Top electrode 112
Send out that organic luminous layer 111 is luminous, in the specific embodiment of the invention when anode of the Top electrode 112 as Organic Light Emitting Diode,
Negative electrode of the pixel electrode 19 as Organic Light Emitting Diode, when negative electrode of the Top electrode 112 as Organic Light Emitting Diode, pixel
Anode of the electrode 19 as Organic Light Emitting Diode, pixel is controlled by circuit structures such as the thin film transistor (TFT)s on array base palte
Voltage between electrode 19 and Top electrode 112, so as to control the illumination effect of organic luminous layer 111.The specific embodiment of the invention
The material of middle Top electrode is the monofilm of tin indium oxide or indium zinc oxide, or is the composite membrane of tin indium oxide and indium zinc oxide, this
Thickness in invention specific embodiment positioned at the Top electrode 112 of non-display area 42 is more than the Top electrode 112 positioned at viewing area 41
Thickness.Therefore, the specific embodiment of the invention is by the way that the subregion of Top electrode 112 is set, in the display contacted with organic luminous layer 111
The thicknesses of layers of the Top electrode 112 of transparent area is relatively thin, to improve the transmitance of light；In the film layer of the Top electrode 112 of non-display area
Thickness is thicker, to reduce the resistivity of Top electrode, under conditions of existing process difficulty is not increased, improves display quality and product
Yield.
As shown in fig. 6, the array base palte in the specific embodiment of the invention also includes auxiliary electrode 60, auxiliary electrode 60 and picture
Plain electrode 19 is located at same layer, and auxiliary electrode 60 is located at the non-display area 42 of underlay substrate 10, and Top electrode 112 is located at auxiliary electrode
Electrically connected on 60 with auxiliary electrode 60, the thickness of the Top electrode 112 on auxiliary electrode 60 is more than on pixel electrode 19
The thickness of the Top electrode 112 of side.The setting of auxiliary electrode 60 can further reduce the resistance of the Top electrode 112 of non-display area
Rate, because the thicknesses of layers of the Top electrode 112 of non-display area is thicker, therefore when Top electrode 112 electrically connects with auxiliary electrode 60, no
Easily there are the Top electrode crack conditions caused by contact hole is relatively deep, Top electrode 112 is relatively thin, so as to reduce electrical contact not
It is good, lift product yield.Certainly, the auxiliary electrode 60 in the specific embodiment of the invention can also use Fig. 2 in metal routing
20 identical design method of layer, similarly, because the thicknesses of layers of the Top electrode 112 of non-display area is thicker, Top electrode 112 deposits
When above thicker auxiliary electrode, it is not easy to crack conditions occur in the marginal zone of auxiliary electrode, connect so as to reduce electrical property
Touch bad.
The specific embodiment of the invention additionally provides a kind of display device for including above-mentioned array base palte, and the display device can
Think OLED display device etc..
The specific embodiment of the invention additionally provides a kind of preparation method of array base palte, including thin film transistor (TFT) making,
The making of flatness layer, the making of organic luminous layer, the making of Top electrode, wherein at least part is positioned at array base palte non-display area
The thickness of the Top electrode is more than the thickness of the Top electrode positioned at array base palte viewing area.
Preferably, as shown in fig. 7, the specific embodiment of the invention is made using intermediate tone mask plate or gray tone mask plate
Electrode, specifically include：
S701, transparent conductive film is formed (for example with the mode of deposition) on organic luminous layer；
S702, photoresist is formed (for example with the mode of coating) on the transparent conductive film, pass through mask plate (example
Such as intermediate tone mask plate or gray tone mask plate) it is exposed, develops, formation photoresist is completely covered area, photoresist part and covered
Cover region and the unglazed photoresist area of coverage, wherein, the non-display area that area corresponds to array base palte, photoresist portion is completely covered in the photoresist
The area of coverage is divided to correspond to the viewing area of array base palte；
S703, by etching, remove the transparent conductive film of the unglazed photoresist area of coverage, and remove photoresist part and cover
The photoresist of cover region, expose the transparent conductive film of photoresist part of footprint；
S704, by etching, remove the transparent conductive film of the segment thickness exposed, formation is located at array base palte
The Top electrode of viewing area；
S705, remaining photoresist is removed, the Top electrode positioned at array base palte non-display area is formed, positioned at the non-display area
Top electrode thickness be more than positioned at the viewing area Top electrode thickness.
The preparation method of the array base palte of specific embodiment of the invention offer is provided below in conjunction with the accompanying drawings.
As shown in figure 8, the specific embodiment of the invention makes cushion 11 first on underlay substrate 10, underlay substrate 10 can
To be glass substrate or flexible base board, the specific manufacturing process of cushion 11 is same as the prior art, no longer superfluous here
State.Then semiconductor active layer 12 is made on cushion 11, semiconductor active layer 12 can be amorphous silicon film or right
Amorphous silicon film carries out crystallizing manufactured polysilicon film, and the specific manufacturing process of semiconductor active layer 12 is same as the prior art, this
In repeat no more.Then gate insulator 13 is made on semiconductor active layer 12, gate insulator 13 can be silica
Film (SiO2), silicon nitride film (SiNx), silicon oxynitride film (SiO2Nx), specific manufacturing process and the existing skill of gate insulator 13
Art is identical, repeats no more here.Then grid 14 is made on gate insulator 13, grid 14 is metal molybdenum (Mo), metallic aluminium
(Al), the monofilm of the metal such as metallic nickel (Ni), or for various metals composition composite membrane, the specific manufacturing process of grid 14 with
Prior art is identical, repeats no more here.Then insulating barrier 15 is made on grid 14, insulating barrier 15 can be silicon dioxide film
(SiO2), silicon nitride film (SiNx), silicon oxynitride film (SiO2Nx), specific manufacturing process and the prior art phase of insulating barrier 15
Together, repeat no more here.Then source electrode 16 and drain electrode 17 are made on insulating barrier 15, source electrode 16 and the specific of drain electrode 17 made
Journey is same as the prior art, repeats no more here.Then flatness layer 18, the tool of flatness layer 18 are made on source electrode 16 and drain electrode 17
Body manufacturing process is same as the prior art, repeats no more here.Then pixel electrode 19, pixel electrode are made on flatness layer 18
19 specific manufacturing process is same as the prior art, repeats no more here.Then organic light emission limit is made on pixel electrode 19
Given layer 110, the specific manufacturing process of organic light emission confining layers 110 is same as the prior art, repeats no more here.Then organic
Organic luminous layer 111 is made in luminous confining layers 110, the specific manufacturing process of organic luminous layer 111 is same as the prior art, this
In repeat no more.Then layer of transparent conductive film 80 is deposited on organic luminous layer 111, by entering to transparent conductive film 80
The Top electrode of the specific embodiment of the invention is formed after row patterning processes.
The specific embodiment of the invention in order to reduce the resistivity of Top electrode, it is necessary to make the thicker Top electrode of thicknesses of layers,
In order to improve the light transmittance of Top electrode, it is necessary to make the relatively thin Top electrode of thicknesses of layers, the specific embodiment of the invention is not in order to
The resistivity of Top electrode is reduced under conditions of influence light transmittance, Top electrode subregion is set, it is aobvious what is contacted with organic luminous layer
Show transparent area, the thickness of the film layer of Top electrode is made it is relatively thin, to improve the transmitance of light；In non-display area, by Top electrode
Film layer thickness make it is thicker, to reduce the resistivity of Top electrode.
Specifically, as shown in figure 9, the specific embodiment of the invention is using intermediate tone mask plate or uses gray tone mask plate system
Make Top electrode, as the specific embodiment of the invention using intermediate tone mask plate 91 makes Top electrode, intermediate tone mask plate 91 includes half
Transparent area 911, shading region 912 and full transparent area (not shown).When it is implemented, coat light on transparent conductive film 80
Photoresist 90, it is exposed, developed by intermediate tone mask plate 91, is formed photoresist and area, photoresist part of footprint is completely covered
With unglazed photoresist area of coverage (not shown), wherein, the non-display area 42 that area corresponds to array base palte, light is completely covered in photoresist
Photoresist part of footprint corresponds to the viewing area 41 of array base palte, and the unglazed photoresist area of coverage, which corresponds to array base palte, need not retain electricity
The region of pole.By taking positive photoresist as an example, photoresist corresponding to viewing area 41 passes through the photoresist 90 of the specific embodiment of the invention
The semi-opaque region 911 of intermediate tone mask plate 91 carries out light irradiation, and photoresist corresponding to non-display area 42 passes through intermediate tone mask plate
91 shading region 912 carries out light irradiation, and certainly, the photoresist 90 in the specific embodiment of the invention can also be negative photoresist,
During if negative photoresist, the full transparent area of the corresponding intermediate tone mask plate 91 of non-display area 42.
Then by etching, the transparent conductive film of the unglazed photoresist area of coverage is removed, and remove photoresist part of footprint
Photoresist, expose the transparent conductive film of photoresist part of footprint；Then through etching, the part exposed is removed
The transparent conductive film of thickness, the Top electrode positioned at array base palte viewing area is formed, due to the transparent conductive film quilt of viewing area
A part is etched away, therefore is located at the thinner thickness of the transparent conductive film of viewing area；Remaining photoresist is finally removed, formation is located at
The Top electrode of array base palte non-display area, because the transparent conductive film of non-display area is not etched, therefore it is located at non-display area
Transparent conductive film thickness it is thicker, i.e., the Top electrode that the specific embodiment of the invention makes to obtain is located at the thickness of non-display area
More than the thickness positioned at viewing area, the Top electrode 112 that the specific embodiment of the invention eventually forms is as shown in Figure 5.
In summary, a kind of array base palte and preparation method that the specific embodiment of the invention provides, by face in array base palte
Subregion setting is carried out to the Top electrode of display exiting surface, to form the Top electrode region of different-thickness, is connect with organic luminous layer
The thicknesses of layers of the Top electrode in tactile display transparent area is relatively thin, to improve the transmitance of light, in the film of the Top electrode of non-display area
Thickness degree is thicker, to reduce its resistivity, while can also reduce the loose contact situation with auxiliary electrode cabling contact zone,
Under conditions of not increasing existing process difficulty, display quality and product yield are improved.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (9)
1. a kind of array base palte, including underlay substrate, the underlay substrate includes viewing area and non-display area, the underlay substrate
On be provided with thin film transistor (TFT), pixel electrode, organic luminous layer and the Top electrode being arranged on the organic luminous layer, it is special
Sign is, in addition to auxiliary electrode；Wherein at least part is more than positioned at the thickness of the Top electrode of the non-display area and is located at
The thickness of the Top electrode of the viewing area；The Top electrode positioned at the non-display area and the institute positioned at the viewing area
Top electrode is stated to be integrally formed；The auxiliary electrode is located at the non-display area of underlay substrate, is located at same layer with the pixel electrode,
The Top electrode is located on the auxiliary electrode and electrically connected with the auxiliary electrode, the Top electrode on the auxiliary electrode
Thickness be more than the thickness of the Top electrode above the pixel electrode.
2. array base palte according to claim 1, it is characterised in that the thin film transistor (TFT) includes：It is sequentially located at described
Semiconductor active layer, gate insulator, grid, insulating barrier, source electrode and drain electrode on underlay substrate；Or,
The thin film transistor (TFT) includes：Be sequentially located at grid on the underlay substrate, gate insulator, semiconductor active layer,
Source electrode and drain electrode.
3. array base palte according to claim 2, it is characterised in that between the underlay substrate and the thin film transistor (TFT)
It is provided with cushion.
4. array base palte according to claim 3, it is characterised in that also include the flatness layer being arranged on underlay substrate,
Between the thin film transistor (TFT) and organic luminous layer, the pixel electrode is located on the flatness layer flatness layer, and
The source electrode or drain electrode exposed by the via on flatness layer and thin film transistor (TFT) connects, and the organic luminous layer is positioned at described
On pixel electrode.
5. array base palte according to claim 1, it is characterised in that the Top electrode is anode, or the Top electrode is
Negative electrode.
6. array base palte according to claim 5, it is characterised in that the material of the Top electrode is tin indium oxide or oxidation
The monofilm of indium zinc, or be tin indium oxide and the composite membrane of indium zinc oxide.
7. a kind of display device, it is characterised in that the display device includes the array base described in any claims of claim 1-6
Plate.
8. a kind of preparation method of array base palte, including the making of thin film transistor (TFT), the making of pixel electrode, organic luminous layer
Making and the making of Top electrode, it is characterised in that when making pixel electrode, make and aid in layer in the non-display area of underlay substrate
Electrode；In the making of the Top electrode, by patterning processes make to be at least partially disposed at array base palte non-display area it is described on
The thickness of electrode is more than the thickness of the Top electrode positioned at array base palte viewing area；And make positioned at array base palte non-display area
The Top electrode is integrally formed with the Top electrode positioned at array base palte viewing area, the Top electrode and auxiliary electrode electricity
Connection, the thickness of the Top electrode on the auxiliary electrode are more than the thickness of the Top electrode above the pixel electrode.
9. according to the method for claim 8, it is characterised in that the patterning processes use intermediate tone mask plate or gray tone
Mask plate makes the Top electrode, specifically includes：
Transparent conductive film is formed on organic luminous layer；
Photoresist is formed on the transparent conductive film, is exposed, shown by intermediate tone mask plate or gray tone mask plate
Shadow, form photoresist and area, photoresist part of footprint and the unglazed photoresist area of coverage is completely covered, wherein, the photoresist is complete
The area of coverage corresponds to the non-display area of array base palte, and photoresist part of footprint corresponds to the viewing area of array base palte；
By etching, the transparent conductive film of the unglazed photoresist area of coverage is removed, and remove the light of photoresist part of footprint
Photoresist, expose the transparent conductive film of photoresist part of footprint；
By etching, the transparent conductive film of the segment thickness exposed is removed, is formed positioned at array base palte viewing area
Top electrode；
Remaining photoresist is removed, the Top electrode positioned at array base palte non-display area is formed, positioned at the Top electrode of the non-display area
Thickness be more than positioned at the viewing area Top electrode thickness.
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| CN104882463A (en) * | 2015-05-06 | 2015-09-02 | 深圳市华星光电技术有限公司 | Oled backboard structure |
| CN105449127B (en) | 2016-01-04 | 2018-04-20 | 京东方科技集团股份有限公司 | Diode displaying substrate and preparation method thereof, display device |
| CN105914226A (en) * | 2016-05-30 | 2016-08-31 | 京东方科技集团股份有限公司 | OLED display substrate and manufacturing method thereof, display device and mask plate |
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| CN112882607A (en) * | 2021-03-09 | 2021-06-01 | 中山大学 | Ultrathin single-substrate display structure and preparation method of transparent conductive film thereof |
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| CN115440777A (en) * | 2022-08-23 | 2022-12-06 | 深圳市华星光电半导体显示技术有限公司 | Array substrate and display panel |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004063461A (en) * | 2002-06-07 | 2004-02-26 | Semiconductor Energy Lab Co Ltd | Light emitting device and manufacturing method therefor |
| CN1582078A (en) * | 2003-08-05 | 2005-02-16 | Lg电子株式会社 | Top-emission active matrix electroluminescence device and method for fabricating the same |
| CN1812119A (en) * | 2004-12-14 | 2006-08-02 | 三星Sdi株式会社 | Organic light emitting display with auxiliary electrode line and method of fabricating the same |
| CN1862825A (en) * | 2005-05-11 | 2006-11-15 | Lg电子株式会社 | Light emitting device and manufacturing method thereof and light emitting display and manufacturing method thereof |
| CN103247762A (en) * | 2013-04-19 | 2013-08-14 | 昆山工研院新型平板显示技术中心有限公司 | Active type OLED (organic light-emitting diode) display device and manufacturing method thereof |
-
2015
- 2015-01-27 CN CN201510041447.8A patent/CN104576705B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004063461A (en) * | 2002-06-07 | 2004-02-26 | Semiconductor Energy Lab Co Ltd | Light emitting device and manufacturing method therefor |
| CN1582078A (en) * | 2003-08-05 | 2005-02-16 | Lg电子株式会社 | Top-emission active matrix electroluminescence device and method for fabricating the same |
| CN1812119A (en) * | 2004-12-14 | 2006-08-02 | 三星Sdi株式会社 | Organic light emitting display with auxiliary electrode line and method of fabricating the same |
| CN1862825A (en) * | 2005-05-11 | 2006-11-15 | Lg电子株式会社 | Light emitting device and manufacturing method thereof and light emitting display and manufacturing method thereof |
| CN103247762A (en) * | 2013-04-19 | 2013-08-14 | 昆山工研院新型平板显示技术中心有限公司 | Active type OLED (organic light-emitting diode) display device and manufacturing method thereof |
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|---|---|
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