CN104246884B - For the CrTi systems alloy of the bonding film layer in magnetic recording media - Google Patents
For the CrTi systems alloy of the bonding film layer in magnetic recording media Download PDFInfo
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- CN104246884B CN104246884B CN201380020226.1A CN201380020226A CN104246884B CN 104246884 B CN104246884 B CN 104246884B CN 201380020226 A CN201380020226 A CN 201380020226A CN 104246884 B CN104246884 B CN 104246884B
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- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 51
- 239000000956 alloy Substances 0.000 title claims abstract description 51
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 24
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 24
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 12
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 11
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 238000005477 sputtering target Methods 0.000 claims description 6
- 239000013077 target material Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 21
- 239000012790 adhesive layer Substances 0.000 description 16
- 239000010410 layer Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000005389 magnetism Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000003870 refractory metal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 241000849798 Nita Species 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000009725 powder blending Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7373—Non-magnetic single underlayer comprising chromium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
- B22F3/15—Hot isostatic pressing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Record Carriers (AREA)
Abstract
The invention provides the bonding film layer CrTi system's alloys for using in the magnetic recording medium and the target for sputtering, and use the perpendicular magnetic recording medium of the alloy.The alloy is a kind of CrTi systems alloy, and it has by atomic ratio measuring by (Cr, Mo, W)x(Ti, Ta, Zr)100‑X, the composition formula that 40≤X≤70 represent；One or two elements that Cr elements wherein in alloy are selected from Mo and W replace in the range of following Mo+W：10 atom % to X/2 atoms %；And the Ti elements in alloy are selected from one or two elements in Ta and Zr and replace in the range of Ta+Zr≤20 atom % (including 0 atom %).
Description
Cross-Reference to Related Applications
This application claims the priority of the Japanese patent application No. 2012-94409 submitted on April 18th, 2012, its is complete
Portion's content is incorporated herein by reference.
Technical field
The present invention relates to the bonding film layer CrTi system's alloys for being used to use in the magnetic recording medium and use the alloy
For the target and perpendicular magnetic recording medium that sputter.
Background technology
In recent years, existing significant progressive in Magnetographic Technology, in order to increase drive capacity, constantly improve magnetic is remembered
Packing density in recording medium, and the perpendicular magnetic of more high record density is reached compared with conventional use of longitudinal magnetic recording medium
Record system has been enter into practical application.And, have also been studied wherein using perpendicular magnetic recording system by heat or microwave
The method for carrying out auxiliary record.Perpendicular magnetic recording system is that wherein easy magnetizing axis is oriented in the magnetic perpendicular to perpendicular magnetic recording medium
System on the direction of the medium side of film, and the method for applying to high record density.
In perpendicular magnetic recording system, wherein the two-layer equation perpendicular magnetic that soft magnetism backing layer and perpendicular magnetic recording layer are combined
Recording medium is effective for reaching high record density with the combination of magnetic monopole type magnetic head.However, because soft magnetism backing layer
Film thickness has tens nm so much to hundreds of nm, and the film thickness may cause the surface of deterioration, and may be to perpendicular magnetic
The formation of recording layer and the floatability of magnetic head are adversely affected.And, its membrane stress high can cause deterioration to
The bonding of glass substrate.
As the means for solving this problem, a kind of magnetic recording media is used for, wherein in glass substrate and soft magnetism
The adhesive layer for strengthening cohesive is formed between property backing layer, for example, such as in Japanese Patent Publication publication number 2006-114162
Described in (patent document 1).Alloy used needs to be amorphous to ensure profile pattern in adhesive layer, and needs
With to substrate and magnetospheric good adhesive property.
For example, used as adhesion-layer materials, Japanese Patent Publication publication number 2008-10088 (patent document 2) is proposed
CrTi, CrTa etc., they are to turn into amorphous by adding Ti, Ta etc. to the Cr with high adherence.Additionally, Japan is specially
Open publication number 2010-92567 (patent document 3) of profit proposes NiTa alloy, and it is to turn into amorphous by adding Ta to Ni
State.
Quote inventory
Patent document
[PTL1] Japanese Patent Publication publication number 2006-114162
[PTL2] Japanese Patent Publication publication number 2008-10088
[PTL3] Japanese Patent Publication publication number 2010-92567
Summary of the invention
However, when using above-mentioned material when, not less than certain level (5nm) film thickness for discharging in sputter procedure
Accumulation electric charge on the surface of the film is required, because the ratio resistance of the film is high.Additionally, ought be big using having in this way
During the film of thickness, its long-term use may cause the gradually increase of number of particles in adhesive layer, it is possible to cause in magnetic recording medium
More defects are produced in matter.
Propose the present invention regarding to the issue above, and the present invention be directed to by using wherein in sputter procedure in film
Even if the adhesive layer that the electric charge accumulated on surface can also easily discharge with relatively thin film thickness, there is provided one kind includes less
The perpendicular magnetic recording medium of defect.It is considered herein that under, inventor conducts in-depth research, and therefore obtains a kind of alloy,
Its ratio resistance that can reduce adhesive layer, i.e. electrical conductivity can be increased, even and if wherein being splashed with relatively thin film thickness
The electric charge for being accumulated during penetrating on the surface of the film can also easily discharge.By the Gao Rong that Mo and W is selected from one or two
The Cr of more than 10 atom % obtains alloy to improve electrical conductivity in point metal substitution CrTi systems alloy.Additionally, inventor also passes through
The Ti during the refractory metal of Zr and Ta replaces CrTi systems alloy is selected from one or two, the conductance for having and more improving is obtained
The alloy of rate.Additionally, have also obtained using the sputtering target material for magnetic recording media of this alloy, and use this alloy
Perpendicular magnetic recording medium.
An embodiment of the invention,
There is provided a kind of bonding film layer CrTi systems alloy for using in the magnetic recording medium, CrTi systems alloy
With by atomic ratio measuring by (Cr, Mo, W)X(Ti,Ta,Zr)100-X, the composition formula that 40≤X≤70 represent；Wherein
One or two elements that Cr elements in the alloy are selected from Mo and W take in the range of following Mo+W
Generation：10 atom % to X/2 atoms %；And
One or two elements that Ti elements in the alloy are selected from Ta and Zr (are wrapped in Ta+Zr≤20 atom %
Include 0 atom %) in the range of replace.
Another embodiment of the invention, there is provided use the sputtering target material of above-mentioned CrTi systems alloy.
Yet another embodiment of the invention, there is provided the perpendicular magnetic recording using above-mentioned CrTi systems alloy is situated between
Matter.
As described above, the present invention provides sputtering target material, it is with high conductivity and can reduce glass in magnetic recording media
The amorphous alloy of the film thickness of the adhesive layer formed between glass substrate and soft magnetism liner film.Can be by reducing adhesive layer
Film thickness reduces the particle in adhesive layer, so as to provide the perpendicular magnetic recording medium with fewer defect.As described above, should at this
For in the alloy of adhesive layer, the present invention to present enhancing electrical conductivity and reduces the effect of the thickness of adhesive layer.
In order to reduce the film thickness of adhesive layer, inventor checked can keep as the non-of the conventional character of adhesive layer
The composition of the electrical conductivity of adhesive layer is improved while crystalline state, and it was found that electrical conductivity can replace CrTi by with Mo and/or W
It is the part Cr improvement in alloy.Furthermore, it is possible to pass through to combine more than three kinds elements, while closing the atomic ratio of Cr, Mo and W
In suitable scope, holding is equal to the amorphous state property of the amorphous state property of conventional composition.
Embodiment is described
The present invention is will be specifically explained below.Unless otherwise mentioned, as used herein " % " represents atom %.
(a)Mo+W：10 atom % to X/2 atoms %
In alloy of the invention, Cr is improved to glass substrate and the element of the cohesive of soft magnetism liner film,
And it is to show similar quality and with the conductance higher of the electrical conductivity than Cr to be in periodic table with the Mo and W of Cr identicals race
The element of rate.By with the part Cr in these elements substitution CrTi systems alloy, obtaining high conductivity.However, because working as Mo and W
Total content can't see significant effect when being less than 10 atom %, so the total content of Mo and W is set to more than 10 atom %
In the range of.The total content of Mo and W is preferably more than 15 atom %.Its upper limit sets and arrives relative to the Cr's as basic element
Content is X/2 atoms %.
(b)(Cr,Mo,W)X(Ti,Ta,Zr)100-X, 40≤X≤70
The amorphous state property of the species influence alloy of element contained in the ratio and alloy of (Cr, Mo, W) in Cr systems alloy.
When the ratio of (Cr, Mo, W) is less than 40% or more than 70%, the required amorphous state property deterioration for adhesive layer.(Cr,
Mo, W) ratio be suitably 45 to 65%.Furthermore, it is possible to pass through to combine more than three kinds elements improvement amorphous state properties, because closing
The element that gold contains is more various, can more strengthen more amorphous state properties.
(c) Ta+Zr≤20 atom % (including 0 atom %)
Refractory metal Ta and/or Zr are to improve the element of electrical conductivity by replacing part Ti.Additionally, in periodic table
In the Zr with Ti identicals race, and Ta shows the property similar to the property of Ti, and can be by with Ta and/or Zr
Element replaces Ti (that is, 0 atom %<Ta+Zr electrical conductivity) is further improved.However, because the addition more than 20 atom % is caused
Its effect is evened up, and its upper limit is set to 20 atom %.
[embodiment]
The present invention is illustrated below with reference to embodiment.
To there is the material powder blending of the simple metal (purity is more than 3N) of the composition shown in table 1, and use
Blend is used as the material powder for consolidating for HIP (high temperature insostatic pressing (HIP)).It is used to be blended using V-type blender.Will be straight with 200mm
The carbon steel tank of footpath and 10mm length is filled with material powder, and with final vacuum and vacuum sealing, to prepare what is consolidated for HIP
Base.The base of powder be will be filled with 1050 DEG C of temperature, the pressure of 120MPa and HIP consolidates under conditions of the retention time of 2 hours
Knot.Then, a diameter of 95mm is prepared by the induration and thickness is the non-retentive alloy sputtering target material of 2mm.Use the sputtering target
Material, prepares thin bond-line film on the glass substrate.
The inside of room is evacuated to 1 × 10-4Below Pa, is filled with 99.99% purity Ar gas in 0.6Pa, and
Sputtered.First, the adhesive layer of 20nm is formed on clean glass substrate, and is formed on for anti-oxidation
The pure Ta films of 5nm.The pure Ta films are formed using commercially available pure Ta targets.
Using the monofilm for preparing in this way as sample, amorphous state property is evaluated by X-ray diffraction, and
Electrical conductivity is evaluated by the reciprocal of ratio resistance determined by four-terminal method.Used as the evaluation of crystal structure, amorphous sample is commented
Valency is " good ", and partly observes that the sample of crystallite is evaluated as " poor " wherein in amorphous state state.Using based on being taken
The relative value for making the value of 1 Cr50Ti in No. 8 comparative examples evaluates electrical conductivity；With 1 to the sample of the relative value less than 1.1
It is evaluated as " poor ", 1.1 to those less than 1.3 are evaluated as " general ", 1.3 to those less than 1.5 are evaluated as " good ", and
More than 1.5 sample is evaluated as " outstanding ".These results are shown in Table 1.
[table 1]
Table 1
Annotation：The numeral of underscore falls beyond the scope of the present invention.
Numbering 1 to 9 shown in table 1 is embodiments of the invention, and numbering 10 to 14 is comparative example.
As shown in table 1, comparative example 10 is the alloy being made up of two kinds of elements of Cr and Ti, and therefore shows poor conductance
Rate.Because more than 70% Cr, Mo and W total content high and low Ti contents, No. 11 amorphous state properties of display difference of comparative example.
Because the low total content and Mo and W of 35% Cr, Mo and W all do not exist, No. 12 amorphous state properties of display difference of comparative example.
Because Mo and W do not exist, comparative example 13 is poor in electrical conductivity.Similar to comparative example 13, comparative example
No. 14 are attributed to Mo and W all in the absence of the electrical conductivity of display difference.Conversely, finding to be shown as 1 to No. 9 of the embodiment of the present invention
The electrical conductivity of color and outstanding amorphous state property, because they all meet condition of the invention.
As described above, it is proposed, according to the invention, obtaining can reduce the ratio resistance of adhesive layer and can increase the conjunction of electrical conductivity
Gold, even and if wherein with relatively thin film thickness, the electric charge for being accumulated in sputter procedure on the surface of the film can also be easy
Ground release.Used selected from one or two refractory metals substitution CrTi systems alloy in Mo and W by with more than 10 atom %
Cr obtain alloy improving electrical conductivity.And, replace alloy by with one or two refractory metals selected from Zr and Ta
In Ti obtain the alloy of electrical conductivity for having and more improving.Sputtering for magnetic recording media can be provided using these alloys
Target, and provide perpendicular magnetic recording medium using the alloy.
Claims (6)
1. a kind of bonding film layer CrTi systems alloy for using in the magnetic recording medium, CrTi systems alloy has by original
Son is than meter by (Cr, Mo, W)X(Ti,Ta,Zr)100-X, the composition formula that 40≤X≤70 represent, wherein
The total content selected from one or two elements in Mo and W in the alloy is 10 atom % to X/2 atoms %；And
And
The total content selected from one or two elements in Ta and Zr in the alloy is 0 atom %~20 atoms %.
2. CrTi systems according to claim 1 alloy, wherein in the alloy selected from one or two in Ta and Zr
Total content of element is more than 0 atom % but in below 20 atom %.
3. CrTi systems according to claim 1 and 2 alloy, wherein the alloy has presses atomic ratio measuring by (Cr, Mo, W)X
(Ti,Ta,Zr)100-X, the composition formula that 45≤X≤65 represent.
4. CrTi systems according to claim 1 and 2 alloy, wherein in the alloy selected from the one kind in Mo and W or two
The total content for planting element is 15 atom % to X/2 atoms %.
5. the sputtering target material of CrTi systems according to any one of claim 1 to 4 alloy is used.
6. the perpendicular magnetic recording medium of CrTi systems according to any one of claim 1 to 4 alloy is used.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012094409A JP5964121B2 (en) | 2012-04-18 | 2012-04-18 | CrTi alloy for adhesion film layer and sputtering target material used for magnetic recording medium, and perpendicular magnetic recording medium using the same |
| JP2012-094409 | 2012-04-18 | ||
| PCT/JP2013/060887 WO2013157468A1 (en) | 2012-04-18 | 2013-04-11 | CrTi-BASED ALLOY FOR ADHESION FILM LAYER FOR USE IN MAGNETIC RECORDING MEDIUM, TARGET MATERIAL FOR SPUTTERING, AND PERPENDICULAR MAGNETIC RECORDING MEDIUM OBTAINED USING SAME |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104246884A CN104246884A (en) | 2014-12-24 |
| CN104246884B true CN104246884B (en) | 2017-06-06 |
Family
ID=49383427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380020226.1A Expired - Fee Related CN104246884B (en) | 2012-04-18 | 2013-04-11 | For the CrTi systems alloy of the bonding film layer in magnetic recording media |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP5964121B2 (en) |
| CN (1) | CN104246884B (en) |
| MY (1) | MY170825A (en) |
| SG (1) | SG11201405474QA (en) |
| TW (1) | TWI576835B (en) |
| WO (1) | WO2013157468A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG11202009585QA (en) * | 2018-03-28 | 2020-10-29 | Jx Nippon Mining & Metals Corp | Perpendicular magnetic recording medium |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5851656A (en) * | 1996-01-12 | 1998-12-22 | Fuji Electric Co., Ltd. | Magnetic recording medium |
| US6071607A (en) * | 1996-04-26 | 2000-06-06 | Fujitsu Limited | Magnetic recording medium and magnetic disk device |
| CN1637867A (en) * | 2003-12-24 | 2005-07-13 | 日立环球储存科技荷兰有限公司 | Magnetic recording medium |
| JP2007273000A (en) * | 2006-03-31 | 2007-10-18 | Hoya Corp | Magnetic recording medium |
| CN102314890A (en) * | 2010-07-09 | 2012-01-11 | 株式会社日立制作所 | Magnetic recording media and magnetic recording system |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11134631A (en) * | 1997-10-27 | 1999-05-21 | Hitachi Metals Ltd | Magnetic record medium |
| US6509111B1 (en) * | 1999-09-24 | 2003-01-21 | Hitachi, Ltd. | Magnetic recording media and magnetic disk apparatus |
| JP2001319314A (en) * | 2000-02-29 | 2001-11-16 | Hitachi Ltd | Magnetic recording medium, method of manufacturing the same, and magnetic recording apparatus using the same |
| JP2004039196A (en) * | 2002-07-08 | 2004-02-05 | Showa Denko Kk | Magnetic recording medium, its manufacturing method, and magnetic recording/reproducing device |
| US6942933B2 (en) * | 2002-07-08 | 2005-09-13 | Showa Denko Kabushiki Kaisha | Magnetic recording medium, production process thereof, and magnetic recording and reproducing apparatus |
| US20050112019A1 (en) * | 2003-10-30 | 2005-05-26 | Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.) | Aluminum-alloy reflection film for optical information-recording, optical information-recording medium, and aluminum-alloy sputtering target for formation of the aluminum-alloy reflection film for optical information-recording |
| JP2006179133A (en) * | 2004-12-24 | 2006-07-06 | Hitachi Global Storage Technologies Netherlands Bv | Magnetic recording medium and magnetic storage device using the same |
| US8025993B2 (en) * | 2007-02-23 | 2011-09-27 | Seagate Technology Llc | Recording media interlayer structure |
| JP2009059431A (en) * | 2007-08-31 | 2009-03-19 | Showa Denko Kk | Magnetic recording medium and magnetic recording and reproducing apparatus |
| KR101098206B1 (en) * | 2008-04-15 | 2011-12-23 | 가부시키가이샤 알박 | Thin film transistor and method for manufacturing thin film transistor |
| US8685547B2 (en) * | 2009-02-19 | 2014-04-01 | Seagate Technology Llc | Magnetic recording media with enhanced writability and thermal stability |
| US8279739B2 (en) * | 2009-08-20 | 2012-10-02 | Showa Denko K.K. | Heat-assisted magnetic recording medium and magnetic storage device |
| JP5734599B2 (en) * | 2010-08-17 | 2015-06-17 | 山陽特殊製鋼株式会社 | CrTi alloy sputtering target material and method for producing perpendicular magnetic recording medium using them |
-
2012
- 2012-04-18 JP JP2012094409A patent/JP5964121B2/en active Active
-
2013
- 2013-04-11 SG SG11201405474QA patent/SG11201405474QA/en unknown
- 2013-04-11 MY MYPI2014702929A patent/MY170825A/en unknown
- 2013-04-11 WO PCT/JP2013/060887 patent/WO2013157468A1/en active Application Filing
- 2013-04-11 CN CN201380020226.1A patent/CN104246884B/en not_active Expired - Fee Related
- 2013-04-17 TW TW102113605A patent/TWI576835B/en not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5851656A (en) * | 1996-01-12 | 1998-12-22 | Fuji Electric Co., Ltd. | Magnetic recording medium |
| US6071607A (en) * | 1996-04-26 | 2000-06-06 | Fujitsu Limited | Magnetic recording medium and magnetic disk device |
| CN1637867A (en) * | 2003-12-24 | 2005-07-13 | 日立环球储存科技荷兰有限公司 | Magnetic recording medium |
| JP2007273000A (en) * | 2006-03-31 | 2007-10-18 | Hoya Corp | Magnetic recording medium |
| CN102314890A (en) * | 2010-07-09 | 2012-01-11 | 株式会社日立制作所 | Magnetic recording media and magnetic recording system |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201411611A (en) | 2014-03-16 |
| SG11201405474QA (en) | 2014-10-30 |
| JP2013222488A (en) | 2013-10-28 |
| WO2013157468A1 (en) | 2013-10-24 |
| MY170825A (en) | 2019-09-04 |
| TWI576835B (en) | 2017-04-01 |
| CN104246884A (en) | 2014-12-24 |
| JP5964121B2 (en) | 2016-08-03 |
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