CN104246884A - CrTi-based alloy for adhesion film layer for use in magnetic recording medium, target material for sputtering, and perpendicular magnetic recording medium obtained using same - Google Patents
CrTi-based alloy for adhesion film layer for use in magnetic recording medium, target material for sputtering, and perpendicular magnetic recording medium obtained using same Download PDFInfo
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- CN104246884A CN104246884A CN201380020226.1A CN201380020226A CN104246884A CN 104246884 A CN104246884 A CN 104246884A CN 201380020226 A CN201380020226 A CN 201380020226A CN 104246884 A CN104246884 A CN 104246884A
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- alloy
- magnetic recording
- recording medium
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7373—Non-magnetic single underlayer comprising chromium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
- B22F3/15—Hot isostatic pressing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Record Carriers (AREA)
Abstract
Provided are a CrTi-based alloy for adhesion film layers for use in magnetic recording media, a target material for sputtering, and a perpendicular magnetic recording medium obtained using the alloy. This alloy is a CrTi-based alloy in which the empirical formula in terms of atomic ratio is represented by (Cr,Mo,W)X(Ti,Ta,Zr)100-X, where 40<=X<=70, in which the Cr element has been replaced with one or the two elements selected from between Mo and W in such an amount that the proportion of Mo+W is in the range of 10 at% to X/2 at%, and in which the Ti element has been replaced with one or the two elements selected from between Ta and Zr in such an amount that (Ta+Zr)<=20 at% (including 0 at%).
Description
The cross reference of related application
This application claims the right of priority of the Japanese patent application No. 2012-94409 submitted on April 18th, 2012, its full content is bonded to this by reference.
Technical field
The present invention relates to bonding rete CrTi system alloy for using in the magnetic recording medium and use this alloy for the target that sputters and perpendicular magnetic recording medium.
Background technology
In recent years, existing significant progressive in Magnetographic Technology, in order to increase drive capacity, continued to improve the recording density in magnetic recording media, and the perpendicular magnetic recording system reaching more high record density compared with the longitudinal magnetic recording medium used with routine enters practical application.And, have also been studied the method being carried out auxiliary record by heat or microwave wherein applying perpendicular magnetic recording system.Perpendicular magnetic recording system is that wherein easy magnetizing axis is oriented in the system on the direction in the medium face of the magnetic film perpendicular to perpendicular magnetic recording medium, and is the method being applicable to high record density.
In perpendicular magnetic recording system, the two-layer equation perpendicular magnetic recording medium wherein soft magnetism backing layer and perpendicular magnetic recording layer combined and the combination of magnetic monopole type magnetic head are effective for reaching high record density.But because the film thickness of soft magnetism backing layer has tens nm so much to hundreds of nm, this film thickness may cause the surface of deterioration, and may cause adverse effect to the floatability of the formation of perpendicular magnetic recording layer and magnetic head.And its high membrane stress can cause the bonding to glass substrate of deterioration.
As the means addressed this is that, employ a kind of magnetic recording media, wherein formed between glass substrate and soft magnetism backing layer for strengthening fusible bonding coat, such as, as described in Japanese Patent Publication publication number 2006-114162 (patent documentation 1).Alloy used in bonding coat needs to be amorphous to guarantee profile pattern, and needs have substrate and magnetospheric good adhesive property.
Such as, as adhesion-layer materials, Japanese Patent Publication publication number 2008-10088 (patent documentation 2) proposes CrTi, CrTa etc., and they become amorphous by adding Ti, Ta etc. to the Cr with high adherence.In addition, Japanese Patent Publication publication number 2010-92567 (patent documentation 3) proposes NiTa alloy, and it becomes amorphous by adding Ta to Ni.
Quote inventory
Patent documentation
[PTL1] Japanese Patent Publication publication number 2006-114162
[PTL2] Japanese Patent Publication publication number 2008-10088
[PTL3] Japanese Patent Publication publication number 2010-92567
Summary of the invention
But when using above-mentioned material, the film thickness being not less than certain level (5nm) is required for being released in sputter procedure the electric charge accumulated on the surface of the film, because the ratio resistance of this film is high.In addition, when use has the film of heavy thickness by this way, its Long-Time Service may cause the increase gradually of number of particles in bonding coat, and can cause producing more defect in the magnetic recording medium.
The present invention is proposed for the problems referred to above, even and if the present invention is directed to the bonding coat that also can easily discharge by using the electric charge wherein accumulated on the surface of the film in sputter procedure to have thinner film thickness, a kind of perpendicular magnetic recording medium comprising less defect is provided.Under this considers, inventors performed deep research, and therefore obtain a kind of alloy, it can reduce the ratio resistance of bonding coat, that is, can increase conductivity, and even if wherein there is thinner film thickness, the electric charge accumulated in sputter procedure on the surface of the film also can easily discharge.The Cr being replaced 10 more than atom % in CrTi system alloy by the refractory metal being selected from Mo and W with one or both obtains alloy to improve conductivity.In addition, inventor also replaces the Ti in CrTi system alloy by the refractory metal being selected from Zr and Ta with one or both, obtain the alloy with the conductivity more improved.In addition, have also obtained the sputtering target material for magnetic recording media using this alloy, and use the perpendicular magnetic recording medium of this alloy.
According to one embodiment of the invention,
Provide a kind of bonding rete CrTi system alloy for using in the magnetic recording medium, described CrTi system alloy has by atomic ratio measuring by (Cr, Mo, W)
x(Ti, Ta, Zr)
100-X, the composition formula that 40≤X≤70 represent; Wherein
One or both elements that Cr element in described alloy is selected from Mo and W replace in the scope of following Mo+W: 10 atom % to X/2 atom %; And
One or both elements that Ti element in described alloy is selected from Ta and Zr replace in the scope of Ta+Zr≤20 atom % (comprising 0 atom %).
According to another embodiment of the invention, provide the sputtering target material using above-mentioned CrTi system alloy.
According to another embodiment more of the present invention, provide the perpendicular magnetic recording medium using above-mentioned CrTi system alloy.
As mentioned above, the invention provides sputtering target material, it is the amorphous alloy having high conductivity and can reduce the film thickness of the bonding coat formed between glass substrate and soft magnetism liner film in magnetic recording media.The particle in bonding coat can be reduced by the film thickness reducing bonding coat, thus the perpendicular magnetic recording medium with less defect is provided.As mentioned above, in this application in the alloy of bonding coat, the present invention presents the effect of thickness strengthening conductivity and reduce bonding coat.
In order to reduce the film thickness of bonding coat, inventor checked the composition that can improve the conductivity of bonding coat while keeping the amorphous state property as the conventional character of bonding coat, and finds that conductivity can by the part Cr replaced in CrTi system alloy improves with Mo and/or W.And, can, by conjunction with more than three kinds elements, make the atomic ratio of Cr, Mo and W in suitable scope simultaneously, keep the amorphous state property of the amorphous state property being equal to conventional composition.
Embodiment describes
The present invention will be specifically described below.Unless otherwise mentioned, as used herein " % " represents atom %.
(a) Mo+W:10 atom % to X/2 atom %
In alloy according to the present invention, Cr is the fusible element improved glass substrate and soft magnetism liner film, and Mo and W being in the race identical with Cr in periodic table is the element showing similar quality and have the conductivity higher than the conductivity of Cr.By replacing the part Cr in CrTi system alloy with these elements, obtain high conductivity.But, because can't see significant effect when the total content of Mo and W is less than 10 atom %, so the total content of Mo and W is set in the scope of 10 more than atom %.The total content of Mo and W is preferably 15 more than atom %.It is X/2 atom % that its upper limit is set to relative to the content of the Cr as fundamental element.
(b)(Cr，Mo，W)
X(Ti，Ta，Zr)
100-X，40≤X≤70
The amorphous state property of the species influence alloy of element contained in the ratio of (Cr, Mo, W) and alloy in Cr system alloy.When the ratio of (Cr, Mo, W) be less than 40% or be greater than 70% time, amorphous state property deterioration required for bonding coat.The ratio of (Cr, Mo, W) is suitably 45 to 65%.In addition, by improving amorphous state property in conjunction with more than three kinds elements, because the element that alloy contains is more various, more amorphous state property can more can be strengthened.
(c) Ta+Zr≤20 atom % (comprising 0 atom %)
Refractory metal Ta and/or Zr is the element improving conductivity by replacing part Ti.In addition, the Zr of the race identical with Ti is in periodic table, and the Ta performance character similar to the character of Ti, and can by improve conductivity further with Ta and/or Zr element replacement Ti (that is, 0 atom % < Ta+Zr).But, because the interpolation being greater than 20 atom % makes its effect even up, its upper limit is set to 20 atom %.
[embodiment]
The present invention is illustrated below with reference to embodiment.
By blended for the material powder of the simple metal (purity is more than 3N) with composition shown in Table 1, and use blend as the material powder for HIP consolidation (high temperature insostatic pressing (HIP)).V-type blender is used to be used for blended.The carbon steel tank material powder with 200mm diameter and 10mm length is filled, and with final vacuum and vacuum seal, with the base for the preparation of HIP consolidation.By the base that is filled with powder HIP consolidation under the condition of the retention time of the temperature of 1050 DEG C, the pressure of 120MPa and 2 hours.Subsequently, prepare diameter by this induration and be 95mm and thickness is the non-retentive alloy sputtering target material of 2mm.Use this sputtering target material, prepare thin bond-line film on the glass substrate.
The inside of room is evacuated to 1 × 10
-4below Pa, is filled with the purity Ar gas with 99.99%, and sputters at 0.6Pa.First, clean glass substrate forms the bonding coat of 20nm, and form the pure Ta film of the 5nm being used for anti-oxidation thereon.Commercially available pure Ta target is used to form this pure Ta film.
Use the monofilm prepared by this way as sample, evaluate amorphous state property by X-ray diffraction, and evaluate conductivity by the inverse of the ratio resistance measured by four-terminal method.As the evaluation of crystal structure, amorphous sample is evaluated as " well ", and the sample wherein partly observing crystallite in amorphous state state is evaluated as " poor ".The relative value based on the value of the Cr50Ti in No. 8 comparative examples being taken as 1 is used to evaluate conductivity; Have 1 to be evaluated as " poor " to the sample of the relative value being less than 1.1,1.1 are evaluated as " generally " to those being less than 1.3, and 1.3 are evaluated as " well " to those being less than 1.5, and the sample of more than 1.5 is evaluated as " remarkably ".These results are shown in Table 1.
[table 1]
Table 1
Annotation: the numeral of underscore drops on beyond scope of the present invention.
Numbering 1 to 9 is in Table 1 embodiments of the invention, and numbering 10 to 14 is comparative examples.
As shown in table 1, No. 10, comparative example is the alloy be made up of Cr and Ti two kinds of elements, and therefore shows poor conductivity.Because high Cr, Mo and W total content of more than 70% and low Ti content, the amorphous state property of No. 11, comparative example display difference.Because the low total content of Cr, Mo and W of 35% and Mo and W do not exist, the amorphous state property of No. 12, comparative example display difference.
Because Mo and W does not exist, No. 13, comparative example is poor in conductivity.Being similar to No. 13, comparative example, there is not the conductivity of display difference owing to Mo and W in No. 14, comparative example.On the contrary, 1 to No. 9 outstanding conductivity of display as the embodiment of the present invention and outstanding amorphous state property is found, because they all meet condition of the present invention.
As mentioned above, according to the present invention, obtain the alloy that namely ratio resistance that can reduce bonding coat can increase conductivity, even and if wherein there is thinner film thickness, the electric charge accumulated in sputter procedure on the surface of the film also can easily discharge.By obtaining alloy to improve conductivity with 10 more than the atom % Cr that one or both refractory metals be selected from Mo and W replace in CrTi system alloy.And, by with one or both refractory metals being selected from Zr and Ta, the Ti replaced in alloy obtains the alloy with the conductivity more improved.These alloys can be used to be provided for the sputtering target material of magnetic recording media, and to use this alloy to provide perpendicular magnetic recording medium.
Claims (6)
1. the bonding rete CrTi system alloy for using in the magnetic recording medium, described CrTi system alloy has by atomic ratio measuring by (Cr, Mo, W)
x(Ti, Ta, Zr)
100-X, the composition formula that 40≤X≤70 represent, wherein
One or both elements that Cr element in described alloy is selected from Mo and W replace in the scope of following Mo+W: 10 atom % to X/2 atom %; And
One or both elements that Ti element in described alloy is selected from Ta and Zr replace in the scope of Ta+Zr≤20 atom % (comprising 0 atom %).
2. CrTi system according to claim 1 alloy, one or both elements that the Ti element in wherein said alloy is selected from Ta and Zr replace in the scope of 0 atom % < Ta+Zr≤20 atom %.
3. CrTi system according to claim 1 and 2 alloy, wherein said alloy has by atomic ratio measuring by (Cr, Mo, W)
x(Ti, Ta, Zr)
100-X, the composition formula that 45≤X≤65 represent.
4. CrTi system according to any one of claim 1 to 3 alloy, one or both elements that the Cr element in wherein said alloy is selected from Mo and W replace in the scope of following Mo+W: 15 atom % to X/2 atom %.
5. use the sputtering target material of CrTi system according to any one of claim 1 to 4 alloy.
6. use the perpendicular magnetic recording medium of CrTi system according to any one of claim 1 to 4 alloy.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012094409A JP5964121B2 (en) | 2012-04-18 | 2012-04-18 | CrTi alloy for adhesion film layer and sputtering target material used for magnetic recording medium, and perpendicular magnetic recording medium using the same |
| JP2012-094409 | 2012-04-18 | ||
| PCT/JP2013/060887 WO2013157468A1 (en) | 2012-04-18 | 2013-04-11 | CrTi-BASED ALLOY FOR ADHESION FILM LAYER FOR USE IN MAGNETIC RECORDING MEDIUM, TARGET MATERIAL FOR SPUTTERING, AND PERPENDICULAR MAGNETIC RECORDING MEDIUM OBTAINED USING SAME |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104246884A true CN104246884A (en) | 2014-12-24 |
| CN104246884B CN104246884B (en) | 2017-06-06 |
Family
ID=49383427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380020226.1A Expired - Fee Related CN104246884B (en) | 2012-04-18 | 2013-04-11 | For the CrTi systems alloy of the bonding film layer in magnetic recording media |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP5964121B2 (en) |
| CN (1) | CN104246884B (en) |
| MY (1) | MY170825A (en) |
| SG (1) | SG11201405474QA (en) |
| TW (1) | TWI576835B (en) |
| WO (1) | WO2013157468A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG11202009585QA (en) * | 2018-03-28 | 2020-10-29 | Jx Nippon Mining & Metals Corp | Perpendicular magnetic recording medium |
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| US5851656A (en) * | 1996-01-12 | 1998-12-22 | Fuji Electric Co., Ltd. | Magnetic recording medium |
| US6071607A (en) * | 1996-04-26 | 2000-06-06 | Fujitsu Limited | Magnetic recording medium and magnetic disk device |
| US20040005481A1 (en) * | 2002-07-08 | 2004-01-08 | Showa Denko K.K. | Magnetic recording medium, production process thereof, and magnetic recording and reproducing apparatus |
| CN1637867A (en) * | 2003-12-24 | 2005-07-13 | 日立环球储存科技荷兰有限公司 | Magnetic recording medium |
| JP2007273000A (en) * | 2006-03-31 | 2007-10-18 | Hoya Corp | Magnetic recording medium |
| CN102314890A (en) * | 2010-07-09 | 2012-01-11 | 株式会社日立制作所 | Magnetic recording media and magnetic recording system |
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| JPH11134631A (en) * | 1997-10-27 | 1999-05-21 | Hitachi Metals Ltd | Magnetic record medium |
| US6509111B1 (en) * | 1999-09-24 | 2003-01-21 | Hitachi, Ltd. | Magnetic recording media and magnetic disk apparatus |
| JP2001319314A (en) * | 2000-02-29 | 2001-11-16 | Hitachi Ltd | Magnetic recording medium, method of manufacturing the same, and magnetic recording apparatus using the same |
| JP2004039196A (en) * | 2002-07-08 | 2004-02-05 | Showa Denko Kk | Magnetic recording medium, its manufacturing method, and magnetic recording/reproducing device |
| US20050112019A1 (en) * | 2003-10-30 | 2005-05-26 | Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.) | Aluminum-alloy reflection film for optical information-recording, optical information-recording medium, and aluminum-alloy sputtering target for formation of the aluminum-alloy reflection film for optical information-recording |
| JP2006179133A (en) * | 2004-12-24 | 2006-07-06 | Hitachi Global Storage Technologies Netherlands Bv | Magnetic recording medium and magnetic storage device using the same |
| US8025993B2 (en) * | 2007-02-23 | 2011-09-27 | Seagate Technology Llc | Recording media interlayer structure |
| JP2009059431A (en) * | 2007-08-31 | 2009-03-19 | Showa Denko Kk | Magnetic recording medium and magnetic recording and reproducing apparatus |
| KR101098206B1 (en) * | 2008-04-15 | 2011-12-23 | 가부시키가이샤 알박 | Thin film transistor and method for manufacturing thin film transistor |
| US8685547B2 (en) * | 2009-02-19 | 2014-04-01 | Seagate Technology Llc | Magnetic recording media with enhanced writability and thermal stability |
| US8279739B2 (en) * | 2009-08-20 | 2012-10-02 | Showa Denko K.K. | Heat-assisted magnetic recording medium and magnetic storage device |
| JP5734599B2 (en) * | 2010-08-17 | 2015-06-17 | 山陽特殊製鋼株式会社 | CrTi alloy sputtering target material and method for producing perpendicular magnetic recording medium using them |
-
2012
- 2012-04-18 JP JP2012094409A patent/JP5964121B2/en active Active
-
2013
- 2013-04-11 SG SG11201405474QA patent/SG11201405474QA/en unknown
- 2013-04-11 MY MYPI2014702929A patent/MY170825A/en unknown
- 2013-04-11 WO PCT/JP2013/060887 patent/WO2013157468A1/en active Application Filing
- 2013-04-11 CN CN201380020226.1A patent/CN104246884B/en not_active Expired - Fee Related
- 2013-04-17 TW TW102113605A patent/TWI576835B/en not_active IP Right Cessation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5851656A (en) * | 1996-01-12 | 1998-12-22 | Fuji Electric Co., Ltd. | Magnetic recording medium |
| US6071607A (en) * | 1996-04-26 | 2000-06-06 | Fujitsu Limited | Magnetic recording medium and magnetic disk device |
| US20040005481A1 (en) * | 2002-07-08 | 2004-01-08 | Showa Denko K.K. | Magnetic recording medium, production process thereof, and magnetic recording and reproducing apparatus |
| CN1637867A (en) * | 2003-12-24 | 2005-07-13 | 日立环球储存科技荷兰有限公司 | Magnetic recording medium |
| JP2007273000A (en) * | 2006-03-31 | 2007-10-18 | Hoya Corp | Magnetic recording medium |
| CN102314890A (en) * | 2010-07-09 | 2012-01-11 | 株式会社日立制作所 | Magnetic recording media and magnetic recording system |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201411611A (en) | 2014-03-16 |
| SG11201405474QA (en) | 2014-10-30 |
| JP2013222488A (en) | 2013-10-28 |
| WO2013157468A1 (en) | 2013-10-24 |
| MY170825A (en) | 2019-09-04 |
| TWI576835B (en) | 2017-04-01 |
| JP5964121B2 (en) | 2016-08-03 |
| CN104246884B (en) | 2017-06-06 |
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