CN104181733A - Display device and transistor array substrate thereof - Google Patents
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Abstract
Description
技术领域technical field
本发明涉及一种显示装置,特别是指一种液晶显示装置及其晶体管阵列基板。The invention relates to a display device, in particular to a liquid crystal display device and a transistor array substrate thereof.
背景技术Background technique
目前的广视角(wider viewing angle)显示技术已发展出利用水平电场(horizontal electric field)来驱动液晶分子的显示器,其例如是边缘电场切换(Fringe Field Switching,FFS)显示器以及横向电场效应(In-Plane-Switching,IPS)显示器。The current wide viewing angle (wider viewing angle) display technology has developed a display that uses a horizontal electric field (horizontal electric field) to drive liquid crystal molecules, such as a fringe field switching (Fringe Field Switching, FFS) display and a lateral electric field effect (In- Plane-Switching, IPS) display.
详细而言,这种类型的显示器具有多个像素电极,而这些像素电极能产生上述水平电场。利用对水平电场强度的改变可以控制液晶分子在平行于基板的平面上的偏转幅度,以使显示器的像素显示出不同的灰阶。对此,许多液晶显示器的制造厂研究如何提高上述水平电场的强度,以加大液晶分子能够偏转的幅度,从而提高显示器的液晶效率。In detail, this type of display has a plurality of pixel electrodes capable of generating the above-mentioned horizontal electric field. The deflection amplitude of the liquid crystal molecules on the plane parallel to the substrate can be controlled by changing the strength of the horizontal electric field, so that the pixels of the display can display different gray scales. In this regard, many liquid crystal display manufacturers are researching how to increase the intensity of the above-mentioned horizontal electric field, so as to increase the deflection range of liquid crystal molecules, thereby improving the liquid crystal efficiency of the display.
发明内容Contents of the invention
本发明提供一种晶体管阵列基板,其共用电极具有多条沟槽,而这些沟槽能提高水平电场的强度。The invention provides a transistor array substrate, the common electrode of which has a plurality of grooves, and the grooves can increase the strength of the horizontal electric field.
本发明提供一种显示装置,其包括上述晶体管阵列基板。The present invention provides a display device, which includes the above-mentioned transistor array substrate.
本发明的一实施例提供一种晶体管阵列基板,包括基板、多条信号线、多个晶体管、绝缘层、多个像素电极以及共用电极。基板具有表面。多条信号线配置在表面上。各条信号线在表面上具有一信号线投影区域。多个晶体管配置在表面上,并电性连接这些信号线。绝缘层配置在这些信号线与这些晶体管上。多个像素电极形成在绝缘层上,并电性连接这些晶体管。各个像素电极的外围具有多个彼此相对的像素边缘。各个像素电极在表面上具有一像素投影区域。共用电极配置在绝缘层下,并具有多个沟槽。这些沟槽其中之一位于其中一个像素边缘的正下方,且沟槽具有一第一边缘。第一边缘沿着与其邻近的像素边缘而延伸,并在表面上具有一个投影区段。投影区段位于与其相邻的像素投影区域与信号线投影区域之间。An embodiment of the present invention provides a transistor array substrate, including a substrate, a plurality of signal lines, a plurality of transistors, an insulating layer, a plurality of pixel electrodes and a common electrode. The substrate has a surface. A plurality of signal lines are arranged on the surface. Each signal line has a signal line projection area on the surface. A plurality of transistors are arranged on the surface and electrically connected to these signal lines. An insulating layer is disposed on the signal lines and the transistors. A plurality of pixel electrodes are formed on the insulating layer and electrically connected with these transistors. The periphery of each pixel electrode has a plurality of pixel edges facing each other. Each pixel electrode has a pixel projection area on the surface. The common electrode is arranged under the insulating layer and has a plurality of grooves. One of the trenches is directly below one of the pixel edges, and the trench has a first edge. The first edge extends along adjacent pixel edges and has a projected section on the surface. The projection section is located between the adjacent pixel projection area and the signal line projection area.
本发明的另一实施例提供一种显示装置,其包括液晶显示面板、背光模块以及电路板组件。液晶显示面板包括上述晶体管阵列基板、对向基板以及液晶层,其中液晶层配置在晶体管阵列基板与对向基板之间。背光模块电性连接液晶显示面板,而电路板组件驱动液晶显示面板显示图像画面。Another embodiment of the present invention provides a display device, which includes a liquid crystal display panel, a backlight module, and a circuit board assembly. The liquid crystal display panel includes the above-mentioned transistor array substrate, an opposite substrate and a liquid crystal layer, wherein the liquid crystal layer is arranged between the transistor array substrate and the opposite substrate. The backlight module is electrically connected to the liquid crystal display panel, and the circuit board component drives the liquid crystal display panel to display images.
基于上述,由于沟槽位在像素电极的其中一条像素边缘的正下方,且第一边缘沿着与其邻近的像素边缘而延伸,加上第一边缘在基板表面上的投影区段是位于与其相邻的像素投影区域与信号线投影区域之间,因此上述沟槽能提高像素电极所产生的水平电场的强度,以增加液晶分子能够偏转的幅度。Based on the above, since the groove is located directly below one of the pixel edges of the pixel electrode, and the first edge extends along the adjacent pixel edge, and the projection section of the first edge on the substrate surface is located at the same Between the adjacent pixel projection area and the signal line projection area, the groove can increase the intensity of the horizontal electric field generated by the pixel electrode, so as to increase the deflection range of the liquid crystal molecules.
为了能更进一步了解本发明为达成既定目的所采取的技术、方法及功效,请参阅以下有关本发明的详细说明、图式,相信本发明的目的、特征与特点,当可由此得以深入且具体的了解,然而所附图式与附件仅提供参考与说明用,并非用来对本发明加以限制者。In order to further understand the technology, method and effect adopted by the present invention to achieve the intended purpose, please refer to the following detailed description and drawings of the present invention, and believe that the purpose, characteristics and characteristics of the present invention can be deepened and concretely obtained from this However, the accompanying drawings and appendices are provided for reference and illustration only, and are not intended to limit the present invention.
附图说明Description of drawings
图1A是本发明一实施例的晶体管阵列基板的布线示意图。FIG. 1A is a schematic wiring diagram of a transistor array substrate according to an embodiment of the present invention.
图1B是图1A中沿线I-I剖面所绘示的剖面示意图。FIG. 1B is a schematic cross-sectional view along the line I-I in FIG. 1A .
图1C是图1A中沿线II-II剖面所绘示的剖面示意图。FIG. 1C is a schematic cross-sectional view along line II-II in FIG. 1A .
图2A是本发明另一实施例的晶体管阵列基板的布线示意图。FIG. 2A is a schematic wiring diagram of a transistor array substrate according to another embodiment of the present invention.
图2B是图2A中沿线III-III剖面所绘示的剖面示意图。FIG. 2B is a schematic cross-sectional view along line III-III in FIG. 2A .
图3是本发明另一实施例的晶体管阵列基板的布线示意图。FIG. 3 is a schematic diagram of wiring of a transistor array substrate according to another embodiment of the present invention.
图4A是本发明一实施例的显示装置的立体示意图。FIG. 4A is a schematic perspective view of a display device according to an embodiment of the present invention.
图4B是图4A中的显示装置的分解示意图。FIG. 4B is an exploded schematic view of the display device in FIG. 4A .
图4C是图4B中液晶显示面板的剖面示意图。FIG. 4C is a schematic cross-sectional view of the liquid crystal display panel in FIG. 4B .
【符号说明】【Symbol Description】
100、200、300、422:晶体管阵列基板100, 200, 300, 422: transistor array substrate
110:基板110: Substrate
120d、120s:信号线120d, 120s: signal line
130:晶体管130: Transistor
130c:通道层130c: Channel layer
130d:漏极130d: drain
130g:栅极130g: grid
130s:源极130s: source
140、240、340:共用电极140, 240, 340: common electrode
151、152:绝缘层151, 152: insulating layer
160、360:像素电极160, 360: pixel electrode
160e、360e:像素边缘160e, 360e: Pixel edge
160s、360s:狭槽160s, 360s: slot
170:栅极绝缘层170: Gate insulating layer
242:电极条242: electrode strip
400:显示装置400: display device
410:组装壳体410: Assembling the shell
412、414:壳体组件412, 414: Housing components
420:液晶显示面板420: Liquid crystal display panel
426:液晶层426: liquid crystal layer
430:电路板组件430: Circuit Board Assembly
432:硬式线路板432: hard circuit board
434:可挠式线路板434: Flexible circuit board
440:背光模块440: Backlight module
424:对向基板424: opposite substrate
E11、E21、E31:第一边缘E11, E21, E31: first edge
E22、E22、E32:第二边缘E22, E22, E32: Second edge
H:接触窗H: contact window
H1:开口H1: open
L1、L2:距离L1, L2: Distance
P1:像素区P1: pixel area
S1、S2、S3:沟槽S1, S2, S3: grooves
具体实施方式Detailed ways
图1A是本发明一实施例的晶体管阵列基板的布线示意图,而图1B是图1A中沿线I-I剖面所绘示的剖面示意图。请参阅图1A与图1B,本实施例的晶体管阵列基板100包括基板110、多条信号线120d与120s、多个晶体管130、共用电极140、绝缘层151以及多个像素电极160。基板110为透明板,其例如是玻璃板或透明塑料板(例如压克力板),并且具有表面112,而这些信号线120d与120s以及这些晶体管130皆配置在表面112上。因此,各条信号线120d与120s在表面112上具有信号线投影区域,其形状与范围如图1A所示的信号线120d与120s。FIG. 1A is a schematic diagram of wiring of a transistor array substrate according to an embodiment of the present invention, and FIG. 1B is a schematic cross-sectional view taken along line I-I in FIG. 1A . Referring to FIG. 1A and FIG. 1B , the transistor array substrate 100 of this embodiment includes a substrate 110 , a plurality of signal lines 120 d and 120 s, a plurality of transistors 130 , a common electrode 140 , an insulating layer 151 and a plurality of pixel electrodes 160 . The substrate 110 is a transparent plate, such as a glass plate or a transparent plastic plate (such as an acrylic plate), and has a surface 112 , and the signal lines 120d and 120s and the transistors 130 are disposed on the surface 112 . Therefore, each of the signal lines 120d and 120s has a signal line projection area on the surface 112, the shape and range of which are shown in FIG. 1A for the signal lines 120d and 120s.
这些信号线120d与120s电性连接这些晶体管130。具体而言,这些信号线120d可为多条彼此并列的数据线(data line),而这些信号线120s可为多条彼此并列的扫描线(scan line)。这些信号线120d与120s彼此交错,以形成多个像素区P1。这些晶体管130分别形成在这些像素区P1内,而各个晶体管130可皆为场效晶体管(Field-Effect Transistor,FET)。所以,各个晶体管130具有通道层(channel)130c、栅极(gate)130g、源极(source)130s以及漏极(drain)130d,其中这些信号线120s(即扫描线)分别连接这些栅极130g,而这些信号线120d(即数据线)分别连接这些源极。如此,信号线120d与120s能电性连接晶体管130。The signal lines 120d and 120s are electrically connected to the transistors 130 . Specifically, the signal lines 120d may be multiple data lines parallel to each other, and the signal lines 120s may be multiple scan lines parallel to each other. These signal lines 120d and 120s intersect each other to form a plurality of pixel regions P1. The transistors 130 are respectively formed in the pixel regions P1, and each of the transistors 130 may be a field-effect transistor (Field-Effect Transistor, FET). Therefore, each transistor 130 has a channel layer (channel) 130c, a gate (gate) 130g, a source (source) 130s, and a drain (drain) 130d, wherein these signal lines 120s (ie scan lines) are respectively connected to these gates 130g , and these signal lines 120d (ie, data lines) are respectively connected to these sources. In this way, the signal lines 120d and 120s can be electrically connected to the transistor 130 .
绝缘层151配置在这些信号线120d、120s与这些晶体管130上。晶体管阵列基板100可还包括另一层绝缘层152,其中绝缘层152覆盖这些信号线120d、120s与这些晶体管130,并位在绝缘层151与基板110之间。绝缘层152覆盖信号线120d、120s与晶体管130,而绝缘层151覆盖绝缘层152,如图1B所示。此外,晶体管阵列基板100可还包括栅极绝缘层170(请参阅图1B)。栅极绝缘层170形成在基板110上,并覆盖基板110、信号线120s以与门极130g。栅极绝缘层170能将栅极130g与通道层130C分开,以产生栅极电容效应(gate capacitive effect),使晶体管130得以具有开关的功能。The insulating layer 151 is disposed on the signal lines 120d and 120s and the transistors 130 . The transistor array substrate 100 may further include another insulating layer 152 , wherein the insulating layer 152 covers the signal lines 120 d , 120 s and the transistors 130 , and is located between the insulating layer 151 and the substrate 110 . The insulating layer 152 covers the signal lines 120d, 120s and the transistor 130, and the insulating layer 151 covers the insulating layer 152, as shown in FIG. 1B. In addition, the transistor array substrate 100 may further include a gate insulating layer 170 (see FIG. 1B ). The gate insulating layer 170 is formed on the substrate 110 and covers the substrate 110 , the signal line 120s and the gate 130g. The gate insulating layer 170 can separate the gate 130g from the channel layer 130C to generate a gate capacitive effect, so that the transistor 130 can have a switch function.
这些像素电极160形成在绝缘层151上,并电性连接这些晶体管130。详细而言,多个接触窗(contact window)H(仅显示在图1B中,且图1B仅示出一个)形成于绝缘层151与152内。接触窗H是贯穿绝缘层151与绝缘层152而形成,并且位在这些漏极130d的正上方。像素电极160从绝缘层151的上表面分别延伸至接触窗H内,从而连接晶体管130的漏极130d。The pixel electrodes 160 are formed on the insulating layer 151 and electrically connected to the transistors 130 . In detail, a plurality of contact windows H (only shown in FIG. 1B , and FIG. 1B shows only one) are formed in the insulating layers 151 and 152 . The contact window H is formed through the insulating layer 151 and the insulating layer 152, and is located directly above the drain electrodes 130d. The pixel electrodes 160 respectively extend from the upper surface of the insulating layer 151 into the contact windows H, so as to be connected to the drain 130 d of the transistor 130 .
由于信号线120s(即扫描线)连接栅极130g,信号线120d(即数据线)连接源极,且像素电极160连接漏极130d,因此这些信号线120s能开启及关闭这些晶体管130,从而控制信号线120d输入像素电压至像素电极160,以使像素电极160能驱动液晶分子偏转。此外,各个像素电极160具有多个彼此并列的狭槽160s,而这些狭槽160s的延伸方向彼此相同。Since the signal line 120s (that is, the scanning line) is connected to the gate 130g, the signal line 120d (that is, the data line) is connected to the source, and the pixel electrode 160 is connected to the drain 130d, these signal lines 120s can turn on and off these transistors 130, thereby controlling The signal line 120d inputs the pixel voltage to the pixel electrode 160 so that the pixel electrode 160 can drive the liquid crystal molecules to deflect. In addition, each pixel electrode 160 has a plurality of slots 160s juxtaposed to each other, and the extending directions of these slots 160s are the same as each other.
共用电极140能提供共用电压(common voltage),并配置在绝缘层151下,其中共用电极140可夹置在绝缘层151与152之间。像素电极160从接触窗H穿过共用电极140,但不与共用电极140接触,所以像素电极160与共用电极140电性绝缘。此外,共用电极140与这些像素电极160重叠,且共用电极140的分布范围涵盖这些狭槽160s,即共用电极140在基板110上所占据的区域涵盖这些狭槽160s在基板110上所占据的区域。The common electrode 140 can provide a common voltage and is disposed under the insulating layer 151 , wherein the common electrode 140 can be sandwiched between the insulating layers 151 and 152 . The pixel electrode 160 passes through the common electrode 140 from the contact window H, but is not in contact with the common electrode 140 , so the pixel electrode 160 is electrically insulated from the common electrode 140 . In addition, the common electrode 140 overlaps with these pixel electrodes 160, and the distribution range of the common electrode 140 covers these slots 160s, that is, the area occupied by the common electrode 140 on the substrate 110 covers the area occupied by these slots 160s on the substrate 110 .
当像素电压输入至像素电极160时,利用这些狭槽160s以及共用电极140提供的共用电压,像素电极160能产生水平电场,以使液晶分子可以在平行于基板110的平面上偏转。如此,晶体管阵列基板100可用来制造边缘电场切换显示器或横向电场效应显示器。另外,须说明的是,在图1A所示的实施例中,狭槽160s可沿着信号线120d而延伸,但在其他实施例中,狭槽160s也可沿着信号线120s而延伸。When the pixel voltage is input to the pixel electrode 160 , the pixel electrode 160 can generate a horizontal electric field by using the common voltage provided by the slots 160 s and the common electrode 140 , so that the liquid crystal molecules can be deflected on a plane parallel to the substrate 110 . In this way, the transistor array substrate 100 can be used to manufacture fringe field switching displays or lateral field effect displays. In addition, it should be noted that, in the embodiment shown in FIG. 1A , the slot 160s may extend along the signal line 120d, but in other embodiments, the slot 160s may also extend along the signal line 120s.
图1C是图1A中沿线II-II剖面所绘示的剖面示意图。请参阅图1A与图1C,各个像素电极160在表面112上具有像素投影区域,其形状与范围如图1A所示的像素电极160,而各个像素电极160的外围具有多个彼此相对的像素边缘160e。这些像素边缘160e皆朝着同一方向而延伸,其中狭槽160s沿着像素边缘160e而延伸,即像素边缘160e与狭槽160s二者的走向相同。此外,在图1A的实施例中,这些像素边缘160e还可以沿着这些信号线120d而延伸。不过,在其他实施例中,当狭槽160s沿着信号线120s而延伸时,像素边缘160e也可以沿着信号线120s而延伸。FIG. 1C is a schematic cross-sectional view along line II-II in FIG. 1A . 1A and 1C, each pixel electrode 160 has a pixel projection area on the surface 112, the shape and range of which are the pixel electrodes 160 shown in FIG. 160e. The pixel edges 160e all extend toward the same direction, and the slot 160s extends along the pixel edge 160e, that is, the direction of the pixel edge 160e and the slot 160s are the same. In addition, in the embodiment of FIG. 1A, the pixel edges 160e can also extend along the signal lines 120d. However, in other embodiments, when the slot 160s extends along the signal line 120s, the pixel edge 160e may also extend along the signal line 120s.
共用电极140具有多个沟槽S1,而这些沟槽S1其中之一位于其中一条像素边缘160e的正下方,并被像素电极160局部遮盖,即沟槽S1与像素电极160部份重叠。详细而言,沟槽S1具有第一边缘E11与第二边缘E12,其中第二边缘E12位在第一边缘E11的对面。从图1A与图1C来看,第一边缘E11沿着与其邻近的像素边缘160e而延伸,并平行于此邻近的像素边缘160e,其中这些第一边缘E11未被这些像素电极160遮盖,但这些第二边缘E12则被这些像素电极160遮盖。The common electrode 140 has a plurality of grooves S1 , and one of the grooves S1 is located directly below one of the pixel edges 160 e and partially covered by the pixel electrode 160 , that is, the groove S1 partially overlaps the pixel electrode 160 . In detail, the trench S1 has a first edge E11 and a second edge E12 , wherein the second edge E12 is opposite to the first edge E11 . From FIG. 1A and FIG. 1C, the first edge E11 extends along the adjacent pixel edge 160e, and is parallel to the adjacent pixel edge 160e, wherein these first edges E11 are not covered by these pixel electrodes 160, but these The second edge E12 is covered by the pixel electrodes 160 .
具体而言,第一边缘E11与第二边缘E12在表面112上各自具有投影区段,其中第一边缘E11的投影区段位于与其相邻的像素投影区域(如图1A所示的像素电极160)以及信号线120d的投影区域(如图1A所示的信号线120d)之间,其中第一边缘E11的投影区段位于与其相邻的像素投影区域之外,而第二边缘E12的投影区段则与其相邻的像素投影区域重叠。Specifically, the first edge E11 and the second edge E12 each have a projection section on the surface 112, wherein the projection section of the first edge E11 is located in the adjacent pixel projection area (the pixel electrode 160 shown in FIG. 1A ) and the projection area of the signal line 120d (as shown in FIG. A segment then overlaps its adjacent pixel projection area.
承上述,在同一个沟槽S1中,像素边缘160e会位在第一边缘E11与第二边缘E12之间,即第一边缘E11与像素边缘160e之间的距离L2以及第二边缘E12与像素边缘160e之间的距离L1二者皆不会等于零。此外,一个像素区P1内可存有一条或两条沟槽S1,而这些沟槽S1未与这些信号线120d、120s交错,即沟槽S1完全位在像素区P1内。另外,在同一像素区P1内,狭槽160s与沟槽S1不重叠,即沟槽S1不会位在狭槽160s的正下方。Based on the above, in the same groove S1, the pixel edge 160e will be located between the first edge E11 and the second edge E12, that is, the distance L2 between the first edge E11 and the pixel edge 160e and the distance between the second edge E12 and the pixel Neither of the distances L1 between the edges 160e will be equal to zero. In addition, one or two trenches S1 may be stored in a pixel region P1, and these trenches S1 are not intersected with the signal lines 120d, 120s, that is, the trenches S1 are completely located in the pixel region P1. In addition, in the same pixel region P1 , the slot 160s does not overlap with the trench S1 , that is, the trench S1 is not directly below the slot 160s.
由于共用电极140具有这些位于像素边缘160e正下方的沟槽S1,而各条沟槽S1具有沿着像素边缘160e而延伸,且未被像素电极160遮盖的第一边缘E11,因此在同一条沟槽S1中,在像素边缘160e与第一边缘E11之间会产生具有较强水平分量的电场。如此,这些沟槽S1能提高像素电极160所产生的水平电场的强度,以增加液晶分子能够偏转的幅度,从而提高显示器的液晶效率。Since the common electrode 140 has these grooves S1 located directly below the pixel edge 160e, and each groove S1 has a first edge E11 extending along the pixel edge 160e and not covered by the pixel electrode 160, therefore, in the same groove In the slot S1, an electric field with a strong horizontal component is generated between the pixel edge 160e and the first edge E11. In this way, the grooves S1 can increase the intensity of the horizontal electric field generated by the pixel electrode 160 to increase the deflection range of the liquid crystal molecules, thereby improving the liquid crystal efficiency of the display.
值得一提的是,在本实施例中,共用电极140可以与这些信号线120d、120s以及晶体管130重叠,而且共用电极140还可以全面性地覆盖这些信号线120d。如此,当晶体管阵列基板100运作时,共用电极140可作为电磁屏蔽层,以降低信号线120d及120s对像素电极160的干扰。It is worth mentioning that, in this embodiment, the common electrode 140 may overlap the signal lines 120d, 120s and the transistor 130, and the common electrode 140 may completely cover the signal lines 120d. In this way, when the transistor array substrate 100 is in operation, the common electrode 140 can serve as an electromagnetic shielding layer to reduce the interference of the signal lines 120d and 120s on the pixel electrode 160 .
图2A是本发明另一实施例的晶体管阵列基板的布线示意图,而图2B是图2A中沿线III-III剖面所绘示的剖面示意图。请参阅图2A与图2B,本实施例的晶体管阵列基板200与前述晶体管阵列基板100二者结构相似,功效大致上相同,因此以下主要介绍晶体管阵列基板200不同于晶体管阵列基板100的差异特征。至于二者相同的特征则不再作详细描述。FIG. 2A is a schematic wiring diagram of a transistor array substrate according to another embodiment of the present invention, and FIG. 2B is a schematic cross-sectional view along line III-III in FIG. 2A . Please refer to FIG. 2A and FIG. 2B , the structure of the transistor array substrate 200 of this embodiment is similar to that of the aforementioned transistor array substrate 100 , and the functions are basically the same. Therefore, the differences between the transistor array substrate 200 and the transistor array substrate 100 are mainly introduced below. As for the same features of the two, no more detailed description will be given.
晶体管阵列基板200包括共用电极240,且共用电极240也具有多条彼此并列的沟槽S2。不过,不同于前述实施例中的共用电极140,这些沟槽S2与这些信号线120s交错。也就是说,沟槽S2会从其中一个像素区P1延伸至另一个像素区P1,并且通过至少两个像素区P1,如图2A所示。此外,在本实施例中,沟槽S2与狭槽160s二者的走向可相同于信号线120d(即数据线)的走向,但在其他实施例中,沟槽S2与狭槽160s二者的走向也可以相同于信号线120s(即扫描线)的走向。The transistor array substrate 200 includes a common electrode 240 , and the common electrode 240 also has a plurality of trenches S2 parallel to each other. However, unlike the common electrodes 140 in the foregoing embodiments, the trenches S2 intersect with the signal lines 120s. That is to say, the trench S2 extends from one pixel region P1 to the other pixel region P1 and passes through at least two pixel regions P1 , as shown in FIG. 2A . In addition, in this embodiment, the direction of both the groove S2 and the slot 160s can be the same as the direction of the signal line 120d (that is, the data line), but in other embodiments, the direction of both the groove S2 and the slot 160s The direction may also be the same as that of the signal line 120s (ie, the scanning line).
一些像素电极160可沿着其中一条沟槽S2而呈直线排列,而像素电极160的部分边缘会与其邻近的沟槽S2边缘切齐。详细而言,各条沟槽S2具有第一边缘E21与第二边缘E22,且第二边缘E22位在第一边缘E21的对面。第一边缘E21未被像素电极160遮盖,并沿着与其邻近的像素边缘160e而延伸,而第二边缘E22与像素电极160的像素边缘160e切齐,如图2A及图2B所示。利用第一边缘E11,这些沟槽S2也能提高像素电极160所产生的水平电场的强度,进而提高显示器的液晶效率。Some pixel electrodes 160 can be arranged in a straight line along one of the trenches S2 , and some edges of the pixel electrodes 160 are aligned with the edges of the adjacent trenches S2 . In detail, each groove S2 has a first edge E21 and a second edge E22, and the second edge E22 is located opposite to the first edge E21. The first edge E21 is not covered by the pixel electrode 160 and extends along the adjacent pixel edge 160e, while the second edge E22 is aligned with the pixel edge 160e of the pixel electrode 160, as shown in FIG. 2A and FIG. 2B. Utilizing the first edge E11, the grooves S2 can also increase the intensity of the horizontal electric field generated by the pixel electrode 160, thereby improving the liquid crystal efficiency of the display.
须说明的是,虽然沟槽S2与这些信号线120s交错,且沟槽S2通过至少两个像素区P1,但这些沟槽S2并不会将共用电极240分裂成两个以上的部件。所以,沟槽S2的整体边缘是连续的,而非彼此分离。也就是说,沟槽S2的第一边缘E21与第二边缘E22二者会经由其他边缘而相连。It should be noted that although the trenches S2 intersect with the signal lines 120s, and the trenches S2 pass through at least two pixel regions P1, these trenches S2 do not split the common electrode 240 into more than two parts. Therefore, the overall edges of trenches S2 are continuous rather than separated from each other. That is to say, both the first edge E21 and the second edge E22 of the trench S2 are connected via other edges.
另外,在图2A所示的实施例中,共用电极240只具有沟槽S2,而不具有前述实施例中的沟槽S1,但在其他实施例中,共用电极240也可以具有两种不同长度的沟槽,即共用电极240不仅具有沟槽S2,而且也可以具有沟槽S1。此外,依据多种不同的产品需求及规格,沟槽S1与S2在数量及排列方式上可以有多种不同的设计。例如,图2A中的其中至少一条沟槽S2可以更换成沟槽S1。或者,共用电极240可具有相同数量的沟槽S1与S2,且这些沟槽S1与S2彼此交错地并列。因此,图1A与图2A所示的这些沟槽S1与S2仅供举例说明,并非限定本发明。In addition, in the embodiment shown in FIG. 2A , the common electrode 240 only has the groove S2 instead of the groove S1 in the previous embodiment, but in other embodiments, the common electrode 240 can also have two different lengths. The grooves, that is, the common electrode 240 not only has the groove S2, but may also have the groove S1. In addition, according to various product requirements and specifications, the grooves S1 and S2 may have various designs in terms of quantity and arrangement. For example, at least one of the grooves S2 in FIG. 2A can be replaced with a groove S1. Alternatively, the common electrode 240 may have the same number of grooves S1 and S2 , and the grooves S1 and S2 are juxtaposed alternately. Therefore, the grooves S1 and S2 shown in FIG. 1A and FIG. 2A are only for illustration, not limiting the present invention.
共用电极240可还具有多个开口H1与多条电极条242。详细而言,各个开口H1形成在其中一条信号线120d(即数据线)的正上方,并沿着此信号线120d而延伸。这些开口H1皆没有与任何沟槽S2相连,所以部分共用电极240会形成在其中一个开口H1以及与其相邻的沟槽S2之间,而此部分共用电极240为电极条242,其中部分第一边缘E21会成为电极条242的边缘,而各条电极条242会沿着像素边缘160e而延伸。这些电极条242不会被像素电极160遮盖,且电极条242与像素电极160之间会产生较强的水平电场,从而增加液晶分子能够偏转的幅度。The common electrode 240 may further have a plurality of openings H1 and a plurality of electrode strips 242 . In detail, each opening H1 is formed directly above one of the signal lines 120d (ie, the data line), and extends along the signal line 120d. These openings H1 are not connected to any trench S2, so part of the common electrode 240 will be formed between one of the openings H1 and its adjacent trench S2, and this part of the common electrode 240 is an electrode strip 242, and some of the common electrodes 240 are first The edge E21 becomes the edge of the electrode strips 242, and each electrode strip 242 extends along the pixel edge 160e. These electrode strips 242 will not be covered by the pixel electrodes 160 , and a strong horizontal electric field will be generated between the electrode strips 242 and the pixel electrodes 160 , thereby increasing the deflection range of the liquid crystal molecules.
此外,由于各个开口H1形成在其中一条信号线120d的正上方,因此这些开口H1会缩小共用电极240与信号线120d之间的重叠区域,以削弱在共用电极240与信号线120d之间所造成的电容耦合效应,进而减轻信号线120d内的信号延迟情形。此外,在本实施例中,多个开口H1是沿着信号线120d而排列,但是在其他实施例中,位于同一条信号线120d的正上方的这些信号线120d可以彼此相连,以形成一条狭长沟槽。In addition, since each opening H1 is formed directly above one of the signal lines 120d, these openings H1 will reduce the overlapping area between the common electrode 240 and the signal line 120d, so as to weaken the interference caused between the common electrode 240 and the signal line 120d. Capacitive coupling effect, thereby reducing the signal delay in the signal line 120d. In addition, in this embodiment, the multiple openings H1 are arranged along the signal line 120d, but in other embodiments, these signal lines 120d located directly above the same signal line 120d can be connected to each other to form a long and narrow groove.
另外,依据多种不同的产品需求及规格,图2A中的其中至少一个开口H1可以被共用电极240填满,甚至可以如同图1A所示的实施例,共用电极240也可以全面性地覆盖这些信号线120d。所以图2A所示的这些开口H1仅供举例说明,并非限定本发明。In addition, according to various product requirements and specifications, at least one of the openings H1 in FIG. 2A can be filled by the common electrode 240, and even like the embodiment shown in FIG. 1A, the common electrode 240 can also completely cover these openings. Signal line 120d. Therefore, the openings H1 shown in FIG. 2A are only for illustration, not limiting the present invention.
图3是本发明另一实施例的晶体管阵列基板的布线示意图。请参阅图3,本实施例的晶体管阵列基板300与前述晶体管阵列基板100二者结构相似,功效大致上相同,而二者相同的特征以下不再作详细描述。不过,晶体管阵列基板300与100二者之间仍存有差异,其在于晶体管阵列基板300的像素电极360的外形不同于像素电极160的外形,且晶体管阵列基板300的共用电极340具有形状不同于沟槽S1的沟槽S3。FIG. 3 is a schematic diagram of wiring of a transistor array substrate according to another embodiment of the present invention. Referring to FIG. 3 , the structure of the transistor array substrate 300 of this embodiment is similar to that of the aforementioned transistor array substrate 100 , and their functions are substantially the same, and the same features of the two will not be described in detail below. However, there are still differences between the transistor array substrate 300 and 100, which are that the shape of the pixel electrode 360 of the transistor array substrate 300 is different from that of the pixel electrode 160, and the common electrode 340 of the transistor array substrate 300 has a shape different from that of the pixel electrode 160. trench S1 to trench S3.
具体而言,在晶体管阵列基板300中,像素电极360具有多个狭槽360s。狭槽360s的形状为V形,且这些狭槽360s彼此并列,其中同一个像素电极360内的这些狭槽360s的走向彼此相同,如图3所示。在本实施例中,同一个像素电极360的这些狭槽360s可沿着信号线120d而排列,但在其他实施例中,同一个像素电极360的这些狭槽360s也可沿着信号线120s而排列。因此,单一个像素电极360内的这些狭槽360s的排列方向不受图3的披露而被限制。此外,各个像素电极360还具有一对彼此相对的像素边缘360e,而像素边缘360e会沿着与其相邻的狭槽360s而延伸,所以像素边缘360e的形状也为V形,如图3所示。Specifically, in the transistor array substrate 300, the pixel electrode 360 has a plurality of slots 360s. The shape of the slots 360s is V-shaped, and these slots 360s are juxtaposed to each other, and the directions of these slots 360s in the same pixel electrode 360 are the same as each other, as shown in FIG. 3 . In this embodiment, the slots 360s of the same pixel electrode 360 can be arranged along the signal line 120d, but in other embodiments, the slots 360s of the same pixel electrode 360 can also be arranged along the signal line 120s. arrangement. Therefore, the arrangement direction of the slots 360s in a single pixel electrode 360 is not limited by the disclosure of FIG. 3 . In addition, each pixel electrode 360 also has a pair of pixel edges 360e opposite to each other, and the pixel edges 360e extend along the adjacent slot 360s, so the shape of the pixel edges 360e is also V-shaped, as shown in FIG. 3 .
共用电极340具有多条彼此并列的沟槽S3,而沟槽S3位于其中一条像素边缘360e的正下方。沟槽S3具有第一边缘E31与第二边缘E32,其中第二边缘E32位在第一边缘E31的对面。第一边缘E31是沿着与其邻近的像素边缘360e而延伸,且不被像素电极360遮盖。由于像素边缘360e的形状为V形,所以沿着像素边缘360e而延伸的第一边缘E31的形状也为V形。The common electrode 340 has a plurality of trenches S3 parallel to each other, and the trench S3 is located directly below one of the pixel edges 360e. The trench S3 has a first edge E31 and a second edge E32, wherein the second edge E32 is opposite to the first edge E31. The first edge E31 extends along the adjacent pixel edge 360 e and is not covered by the pixel electrode 360 . Since the shape of the pixel edge 360e is V-shaped, the shape of the first edge E31 extending along the pixel edge 360e is also V-shaped.
在本实施例中,第二边缘E32被像素电极360遮盖,但是在其他实施例中,第二边缘E32也可以与像素电极360的像素边缘360e切齐。此外,在图3所示的实施例中,共用电极340可以与这些信号线120d、120s以及晶体管130重叠,而且共用电极340还可以全面性地覆盖这些信号线120d。如此,当晶体管阵列基板300运作时,共用电极340可作为电磁屏蔽层,以降低信号线120d及120s对像素电极360的干扰。In this embodiment, the second edge E32 is covered by the pixel electrode 360 , but in other embodiments, the second edge E32 can also be aligned with the pixel edge 360 e of the pixel electrode 360 . In addition, in the embodiment shown in FIG. 3 , the common electrode 340 may overlap the signal lines 120d, 120s and the transistor 130, and the common electrode 340 may completely cover the signal lines 120d. In this way, when the transistor array substrate 300 is in operation, the common electrode 340 can serve as an electromagnetic shielding layer to reduce the interference of the signal lines 120d and 120s on the pixel electrode 360 .
不过,在其他实施例中,共用电极340也可以具有多个如图2A所示的开口H1与多条电极条242,其中这些开口H1可沿着信号线120d或120s而排列。如此,可缩小共用电极340与信号线120d或120s之间的重叠区域,从而削弱在共用电极340与信号线120d或120s之间所造成的电容耦合效应。此外,上述共用电极340所具有的这些开口H1可彼此相连,以形成一条狭长沟槽。However, in other embodiments, the common electrode 340 may also have a plurality of openings H1 and a plurality of electrode strips 242 as shown in FIG. 2A , wherein the openings H1 may be arranged along the signal line 120d or 120s. In this way, the overlapping area between the common electrode 340 and the signal line 120d or 120s can be reduced, thereby weakening the capacitive coupling effect caused between the common electrode 340 and the signal line 120d or 120s. In addition, the openings H1 of the common electrode 340 may be connected to each other to form a long and narrow trench.
图4A是本发明一实施例的显示装置的立体示意图,而图4B是图4A中的显示装置的分解示意图。请参阅图4A与图4B,本实施例的显示装置400可以是电脑屏幕(如图4A与图4B所示)或电视机等显示器。或者,显示装置400可以是手持电子设备(portable electronic device)的屏幕,其中此手持电子设备例如是手机、智慧手机、平板电脑、笔记型电脑、数码相机、数字摄影机或掌上型游戏机等。FIG. 4A is a perspective view of a display device according to an embodiment of the present invention, and FIG. 4B is an exploded view of the display device in FIG. 4A . Referring to FIG. 4A and FIG. 4B , the display device 400 of this embodiment may be a computer screen (as shown in FIG. 4A and FIG. 4B ) or a display such as a TV. Alternatively, the display device 400 may be a screen of a portable electronic device, such as a mobile phone, a smart phone, a tablet computer, a notebook computer, a digital camera, a digital video camera, or a handheld game console.
显示装置400包括组装壳体410、液晶显示面板420、背光模块440及电路板组件430,其中组装壳体410可包括两个壳体组件412与414。利用壳体组件412与414二者的结合,液晶显示面板420、背光模块440以及电路板组件430得以装设在组装壳体410内。液晶显示面板420电性连接电路板组件430。背光模块440与液晶显示面板420相对而设,而且背光模块440可作为液晶显示面板420的背光源。The display device 400 includes an assembly case 410 , a liquid crystal display panel 420 , a backlight module 440 and a circuit board assembly 430 , wherein the assembly case 410 may include two case assemblies 412 and 414 . By combining the housing components 412 and 414 , the liquid crystal display panel 420 , the backlight module 440 and the circuit board component 430 are installed in the assembled housing 410 . The liquid crystal display panel 420 is electrically connected to the circuit board assembly 430 . The backlight module 440 is disposed opposite to the liquid crystal display panel 420 , and the backlight module 440 can be used as a backlight source of the liquid crystal display panel 420 .
电路板组件430可以是一种装设(mount)有多个电子元件的软硬电路板(flex-rigid circuit board),并且包括硬式线路板(rigid circuit board)432与可挠式线路板(flexible circuit board)434,其中上述电子元件包括多个被动元件以及多个主动元件,而这些被动元件以及这些主动元件可以构成驱动电路以及供电电路,其中驱动电路能驱动液晶显示面板420显示图像画面,而供电电路能控制外界电能输入至背光模块440与液晶显示面板420。The circuit board assembly 430 can be a flex-rigid circuit board (flex-rigid circuit board) with multiple electronic components installed (mount), and includes a rigid circuit board (rigid circuit board) 432 and a flexible circuit board (flexible circuit board) 434, wherein the above-mentioned electronic components include a plurality of passive components and a plurality of active components, and these passive components and these active components can constitute a driving circuit and a power supply circuit, wherein the driving circuit can drive the liquid crystal display panel 420 to display image images, and The power supply circuit can control external power input to the backlight module 440 and the liquid crystal display panel 420 .
此外,可挠式线路板434连接于硬式线路板432与液晶显示面板420之间。利用可挠式线路板434,电路板组件430能电性连接液晶显示面板420。另外,电路板组件430也可利用多条导线来电性连接液晶显示面板420,所以电路板组件430不限定仅为软硬电路板。In addition, the flexible circuit board 434 is connected between the rigid circuit board 432 and the liquid crystal display panel 420 . Using the flexible circuit board 434 , the circuit board assembly 430 can be electrically connected to the liquid crystal display panel 420 . In addition, the circuit board assembly 430 can also use a plurality of wires to electrically connect the liquid crystal display panel 420 , so the circuit board assembly 430 is not limited to be only a soft and hard circuit board.
图4C是图4B中液晶显示面板的剖面示意图。请参阅图4C,液晶显示面板420包括晶体管阵列基板422、对向基板424以及液晶层426,其中液晶层426配置在晶体管阵列基板422与对向基板424之间,而晶体管阵列基板422与对向基板424可经由框胶(图未示出)而彼此结合,其中此框胶会围绕及密封液晶层426。FIG. 4C is a schematic cross-sectional view of the liquid crystal display panel in FIG. 4B . Please refer to FIG. 4C, the liquid crystal display panel 420 includes a transistor array substrate 422, an opposite substrate 424 and a liquid crystal layer 426, wherein the liquid crystal layer 426 is arranged between the transistor array substrate 422 and the opposite substrate 424, and the transistor array substrate 422 and the opposite The substrates 424 can be combined with each other through a sealant (not shown), wherein the sealant will surround and seal the liquid crystal layer 426 .
晶体管阵列基板422可为前述实施例中的晶体管阵列基板100、200或300,而液晶显示面板420可以是边缘电场切换(FFS)显示器或横向电场效应(IPS)专用的面板。因此,液晶层426可以包含水平配向的液晶材料。此外,对向基板424可以是彩色滤光基板(color filter arraysubstrate)。The transistor array substrate 422 can be the transistor array substrate 100 , 200 or 300 in the foregoing embodiments, and the liquid crystal display panel 420 can be a fringe field switching (FFS) display or a panel dedicated to lateral field effect (IPS). Accordingly, the liquid crystal layer 426 may include a horizontally aligned liquid crystal material. In addition, the opposite substrate 424 may be a color filter array substrate.
综上所述,本发明实施例中的共用电极具有多个沟槽,而沟槽位在像素电极的其中一个像素边缘的正下方,并且具有未被像素电极遮盖的部分边缘(例如第一边缘),其中此部分边缘是沿着像素电极的像素边缘而延伸。因此,这些沟槽能提高像素电极所产生的水平电场的强度,以增加液晶分子能够偏转的幅度,从而提高显示器的液晶效率。To sum up, the common electrode in the embodiment of the present invention has a plurality of grooves, and the groove is located directly below one of the pixel edges of the pixel electrode, and has a part of the edge not covered by the pixel electrode (for example, the first edge ), wherein the part of the edge extends along the pixel edge of the pixel electrode. Therefore, these grooves can increase the intensity of the horizontal electric field generated by the pixel electrodes, so as to increase the deflection range of the liquid crystal molecules, thereby improving the liquid crystal efficiency of the display.
以上所述仅为本发明的优选可行实施例,凡依本发明权利要求范围所做的均等变化与修饰,皆应属本发明的涵盖范围。The above descriptions are only preferred feasible embodiments of the present invention, and all equivalent changes and modifications made according to the claims of the present invention shall fall within the scope of the present invention.
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