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CN104134720A - Preparation method of organic and inorganic hybridization perovskite material growing by single-source flash evaporation method and plane solar cell of material - Google Patents

Preparation method of organic and inorganic hybridization perovskite material growing by single-source flash evaporation method and plane solar cell of material Download PDF

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CN104134720A
CN104134720A CN201410327199.9A CN201410327199A CN104134720A CN 104134720 A CN104134720 A CN 104134720A CN 201410327199 A CN201410327199 A CN 201410327199A CN 104134720 A CN104134720 A CN 104134720A
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inorganic hybridization
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徐闰
袁野
徐海涛
王文贞
葛升
徐飞
王林军
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SHANGHAI UNIVERSITY
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K71/10Deposition of organic active material
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    • H10K30/15Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/152Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
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Abstract

本发明涉及一种单源闪蒸法生长有机无机杂化钙钛矿材料及其平面型太阳能电池的制备方法,属于新型材料器件制造工艺领域。其中有机无机杂化钙钛矿薄膜制备方法是:用钙钛矿材料的溶液做单一蒸发源,采用小于1秒的时间将金属蒸发舟迅速加热至1000℃以上的温度,可制备出成份准确的有机无机杂化钙钛矿薄膜。采用单源闪蒸法制备的有机无机杂化钙钛矿薄膜具有蒸发速率快,薄膜无空洞,适合做平面型器件的特点。并采用TiO2或ZnO为n型材料,Spiro-OMeTAD为p型材料与i型的有机无机杂化钙钛矿薄膜一起构成p-i-n型平面太阳能电池器件,优化制备条件后可获得效率为6.26%的器件。

The invention relates to a preparation method of an organic-inorganic hybrid perovskite material grown by a single-source flash evaporation method and a planar solar cell, and belongs to the field of manufacturing technology of new material devices. Among them, the preparation method of organic-inorganic hybrid perovskite film is: use the solution of perovskite material as a single evaporation source, and use less than 1 second to rapidly heat the metal evaporation boat to a temperature above 1000 ° C, which can prepare a precise composition. Organic-inorganic hybrid perovskite thin films. The organic-inorganic hybrid perovskite film prepared by the single-source flash evaporation method has the characteristics of fast evaporation rate, no void in the film, and is suitable for planar devices. And TiO 2 or ZnO is used as n-type material, Spiro-OMeTAD is used as p-type material and i-type organic-inorganic hybrid perovskite film to form a pin-type planar solar cell device. After optimizing the preparation conditions, an efficiency of 6.26% can be obtained. device.

Description

单源闪蒸法生长有机无机杂化钙钛矿材料及其平面型太阳能电池的制备方法Organic-inorganic hybrid perovskite material grown by single-source flash evaporation method and its preparation method for planar solar cells

技术领域 technical field

本发明涉及一种单源闪蒸法生长有机无机杂化钙钛矿材料及其平面型太阳能电池的制备方法,属于新型材料器件制造工艺领域。 The invention relates to a preparation method of an organic-inorganic hybrid perovskite material grown by a single-source flash evaporation method and a planar solar cell, and belongs to the field of manufacturing technology of new material devices.

背景技术 Background technique

当今世界,随着地球资源的日益减少和人类对能源需求的不断增加,能源危机已经迫在眉睫。为了生存和发展,人类必须寻求可以替代常规能源的可再生的洁净新能源,其中的选择之一是太阳能发电。太阳能具有储存巨大,永不枯竭,清洁无污染、不受地域限制等优点,是人类最重要的新能源。 In today's world, with the dwindling of earth resources and the increasing demand for energy, the energy crisis is imminent. In order to survive and develop, human beings must seek renewable clean new energy sources that can replace conventional energy sources, and one of the options is solar power generation. Solar energy has the advantages of huge storage, inexhaustibility, cleanness and pollution-free, and no geographical restrictions. It is the most important new energy source for human beings.

目前太阳能电池主要包括晶体硅电池和薄膜太阳能电池,其中薄膜太阳能电池因生产用料少,价格便宜,可塑性好等优点成为太阳能光伏电池的发展趋势。现在,两种主流产业化的薄膜电池材料为碲化镉(CdTe)和铜铟镓硒(CIGS),它们均含有地壳中稀缺的元素(Te和In),因此不适合大规模生产。最近,一种以CH3NH3PbI3为代表的有机无机杂化钙钛矿材料薄膜太阳能电池获得了学术界的广泛关注。这类有机无机杂化钙钛矿材料所含元素均为地壳中富有元素,可大规模生产,且价格低廉。自2012年开始,以CH3NH3PbI3为主体吸收层太阳能电池的研究中,它的转换效率在短短一年内迅速飙升,突破了15%。截至到2014年6月,经验证的最高效率可达17.9%。这使得该材料极有可能成为下一代的主流薄膜太阳能电池材料,从而也吸引了国内外的大批研究人员的关注。该材料的制备方法主要为化学方法。如旋涂法和基于旋涂法的两步法等。这两种方法都可在基于多孔材料TiO2和ZnO中沉积出高质量的薄膜,从而获得高效率。但对于平面型器件却不太适合,主要的原因在于该材料在后期烘烤退火时材料易于凝聚形成大晶粒,从而使大晶粒之间出现空洞。这将减少光子的吸收,并同时减小并联电阻,使器件效率降低。与之相对的是,基于真空的方法可明显改善薄膜覆盖度。如Henry Snaith采用双源法可制备获得无空洞小晶粒的薄膜,但双源法控制复杂,两个独立的蒸发源需要能稳定的工作在确定比例的速率上。另外,为实现高质量薄膜,蒸发速率非常的慢,一般需要控制在0.5埃每秒以内。这样低的速率不适合大规模生产。 At present, solar cells mainly include crystalline silicon cells and thin-film solar cells, among which thin-film solar cells have become the development trend of solar photovoltaic cells due to the advantages of less production materials, low price, and good plasticity. At present, the two mainstream industrial thin-film battery materials are cadmium telluride (CdTe) and copper indium gallium selenide (CIGS), both of which contain elements (Te and In) that are scarce in the earth's crust, so they are not suitable for mass production. Recently, an organic-inorganic hybrid perovskite material thin-film solar cell represented by CH 3 NH 3 PbI 3 has attracted widespread attention from the academic community. This type of organic-inorganic hybrid perovskite material contains elements that are abundant in the earth's crust, can be produced on a large scale, and is cheap. Since 2012, in the research of solar cells with CH 3 NH 3 PbI 3 as the main absorption layer, its conversion efficiency has soared rapidly in just one year, breaking through 15%. As of June 2014, the verified highest efficiency can reach 17.9%. This makes this material very likely to become the mainstream thin-film solar cell material of the next generation, which has also attracted the attention of a large number of researchers at home and abroad. The preparation method of the material is mainly a chemical method. Such as spin coating method and two-step method based on spin coating method. Both methods deposit high-quality thin films in porous-based materials TiO2 and ZnO, resulting in high efficiencies. However, it is not suitable for planar devices. The main reason is that the material is easy to condense to form large grains during post-baking and annealing, so that voids appear between the large grains. This will reduce the absorption of photons, and at the same time reduce the parallel resistance, making the device less efficient. In contrast, vacuum-based methods can significantly improve film coverage. For example, Henry Snaith can prepare a thin film without voids and small grains by using the dual-source method, but the control of the dual-source method is complicated, and two independent evaporation sources need to be able to work stably at a certain rate. In addition, in order to achieve high-quality thin films, the evaporation rate is very slow, and generally needs to be controlled within 0.5 Angstroms per second. Such low rates are not suitable for large-scale production.

发明内容 Contents of the invention

针对现有技术存在的缺陷,本发明的目的是提供一种单源闪蒸法生长有机无机杂化钙钛矿材料及其平面型太阳能电池的制备方法。采用有机无机杂化钙钛矿材料的溶液或粉末做蒸发源,用单源闪蒸法直接制备钙钛矿薄膜作为太阳能电池的吸收层,并制备出相应的太阳能电池器件,为制备高转换效率的有机无机杂化钙钛矿薄膜太阳能电池提供一种新的工艺。 In view of the defects in the prior art, the object of the present invention is to provide a method for preparing organic-inorganic hybrid perovskite materials and planar solar cells grown by single-source flash evaporation. The solution or powder of organic-inorganic hybrid perovskite material is used as the evaporation source, and the perovskite film is directly prepared by the single-source flash evaporation method as the absorbing layer of the solar cell, and the corresponding solar cell device is prepared to prepare high conversion efficiency. The organic-inorganic hybrid perovskite thin-film solar cells provide a new process.

为达到上述目的,本发明采用如下技术方案: To achieve the above object, the present invention adopts the following technical solutions:

一种单源闪蒸法生长有机无机杂化钙钛矿材料及其平面型太阳能电池的制备方法,具有如下工艺过程和步骤: A method for preparing an organic-inorganic hybrid perovskite material grown by a single-source flash evaporation method and a planar solar cell has the following process and steps:

a、    将透明导电玻璃进行预处理; a. Pretreat the transparent conductive glass;

b、    在透明导电玻璃上沉积n型TiO2或ZnO,然后放入真空蒸发设备的样品台上作为衬底; b. Deposit n-type TiO 2 or ZnO on transparent conductive glass, then put it on the sample stage of vacuum evaporation equipment as substrate;

c、    把有机无机杂化钙钛矿材料溶解于有机溶剂中,制备成有机无机杂化钙钛矿溶液或粉末; c. Dissolve the organic-inorganic hybrid perovskite material in an organic solvent to prepare an organic-inorganic hybrid perovskite solution or powder;

d、    将金属蒸发舟进行预处理; d. Pretreat the metal evaporation boat;

e、    将有机无机杂化钙钛矿溶液或粉末均匀的平铺于金属蒸发舟上; e. Evenly spread the organic-inorganic hybrid perovskite solution or powder on the metal evaporation boat;

f、    在蒸发室气压低于5×10-3Pa的真空或惰性气体或氮气气氛的条件下,通过闪蒸法将有机无机杂化钙钛矿蒸镀到衬底上,形成薄膜; f. Under the conditions of a vacuum or an inert gas or nitrogen atmosphere in an evaporation chamber whose pressure is lower than 5×10 -3 Pa, the organic-inorganic hybrid perovskite is evaporated onto the substrate by a flash evaporation method to form a thin film;

g、    将蒸镀完成的薄膜进行后期退火处理; g. Perform post-annealing treatment on the evaporated film;

h、    在制备好的有机无机杂化钙钛矿薄膜材料上旋涂空穴传输层; h. Spin-coat the hole transport layer on the prepared organic-inorganic hybrid perovskite film material;

i、    蒸镀电极,获得平面型有机无机杂化钙钛矿太阳能电池。 i. Evaporate electrodes to obtain planar organic-inorganic hybrid perovskite solar cells.

所述步骤a中透明导电玻璃为FTO,即掺F的SnO2;或AZO,即掺Al的ZnO;或ITO,即掺Sn的In2O3;预处理步骤为:先采用曲拉通清洗玻璃表面,然后用去离子水将表面残余的曲拉通冲洗掉,之后采用丙酮超声清洗15分钟,然后用去离子水冲洗表面,之后再用乙醇超声清洗15分钟,再用去离子水冲洗表面,随后将其烘干;最后采用紫外臭氧或微波等离子体处理表面。 In the step a, the transparent conductive glass is FTO, that is, F-doped SnO 2 ; or AZO, that is, Al-doped ZnO; or ITO, that is, Sn-doped In 2 O 3 ; the pretreatment step is: first use Triton to clean The glass surface, then rinse off the residual triton with deionized water, then ultrasonically clean with acetone for 15 minutes, then rinse the surface with deionized water, then ultrasonically clean with ethanol for 15 minutes, and then rinse the surface with deionized water , which is then dried; finally, the surface is treated with UV-ozone or microwave plasma.

所述步骤b中在透明导电玻璃上沉积n型TiO2或ZnO,沉积方法可采用磁控溅射法、旋涂或喷雾法。所得的TiO2和ZnO将作为衬底使用,在其上沉积有机无机杂化钙钛矿材料。 In the step b, n-type TiO 2 or ZnO is deposited on the transparent conductive glass, and the deposition method can be magnetron sputtering, spin coating or spraying. The resulting TiO2 and ZnO will be used as substrates on which to deposit organic-inorganic hybrid perovskite materials.

所述步骤c中有机无机杂化钙钛矿溶液或粉末是指包括CH3NH3PbX3和CH3NH3SnX3在内的ABX3型有机无机杂化钙钛矿材料的溶液或粉末,其中A是指类似CH3NH3的正一价有机小分子基团,B是指正二价金属元素,X是指负一价卤族元素。 The organic-inorganic hybrid perovskite solution or powder in the step c refers to the solution or powder of the ABX 3 type organic-inorganic hybrid perovskite material including CH 3 NH 3 PbX 3 and CH 3 NH 3 SnX 3 , Wherein A refers to a positive monovalent organic small molecule group similar to CH 3 NH 3 , B refers to a positive divalent metal element, and X refers to a negative monovalent halogen element.

所述步骤d中金属蒸发舟是指钽片或钼片或钨片。对金属舟进行预处理,是指对金属表面先采用丙酮、乙醇和去离子水依次清洗,吹干后在用紫外臭氧或等离子体处理金属表面。 The metal evaporation boat in the step d refers to a tantalum sheet or a molybdenum sheet or a tungsten sheet. The pretreatment of the metal boat refers to cleaning the metal surface with acetone, ethanol and deionized water in sequence, and then treating the metal surface with ultraviolet ozone or plasma after drying.

所述步骤f中通过闪蒸法蒸镀有机无机杂化钙钛矿薄膜是指将蒸发室气压抽真空至低于5×10-3Pa,继续保持抽速以保持此真空度,或关闭真空泵或阀门,或通入惰性气体或氮气至1-100Pa,然后加载80-250A电流,将有机无机杂化钙钛矿溶液或粉末在小于1秒的时间内快速升温至1000-1500℃,整个蒸发过程小于5秒。衬底采用步骤b中所指的TiO2或ZnO,衬底可保持在室温条件,也可保持在100-150℃的温度。 Evaporating the organic-inorganic hybrid perovskite film by the flash evaporation method in the step f refers to evacuating the evaporation chamber to a pressure lower than 5×10 -3 Pa, continuing to maintain the pumping speed to maintain this vacuum degree, or turning off the vacuum pump Or a valve, or pass in an inert gas or nitrogen to 1-100Pa, and then apply a current of 80-250A to rapidly heat up the organic-inorganic hybrid perovskite solution or powder to 1000-1500°C in less than 1 second, and evaporate the entire The process is less than 5 seconds. The substrate is TiO 2 or ZnO referred to in step b, and the substrate can be kept at room temperature or at a temperature of 100-150°C.

所述步骤g中将蒸镀完成的薄膜进行后期退火处理是指将蒸镀完成的有机无机杂化钙钛矿薄膜在氮气气氛和90-150℃的条件下烘烤5-40分钟,形成致密、结晶良好的薄膜。 In the step g, post-annealing the vapor-deposited film refers to baking the vapor-deposited organic-inorganic hybrid perovskite film in a nitrogen atmosphere at 90-150°C for 5-40 minutes to form a dense , Well-crystallized film.

所述步骤h中在制备好的有机无机杂化钙钛矿薄膜材料上旋涂空穴传输层是指将Spiro-OMeTAD或P3HT作为空穴传输层旋涂在蒸镀完成的钙钛矿薄膜材料上。 Spin-coating the hole transport layer on the prepared organic-inorganic hybrid perovskite film material in the step h refers to spin-coating Spiro-OMeTAD or P3HT on the evaporated perovskite film material as the hole transport layer superior.

所述步骤i中蒸镀电极,获得平面型有机无机杂化钙钛矿太阳能电池是指在旋涂空穴传输层后的材料表面,用真空蒸发的方法蒸镀一定形状的金或银电极,从而获得平面型有机无机杂化钙钛矿太阳能电池。 Evaporating the electrode in the step i to obtain a planar organic-inorganic hybrid perovskite solar cell refers to evaporating a gold or silver electrode of a certain shape on the surface of the material after the hole transport layer is spin-coated by vacuum evaporation, Thus, a planar organic-inorganic hybrid perovskite solar cell is obtained.

本发明同现有技术相比,具有如下显著优点: Compared with the prior art, the present invention has the following significant advantages:

本发明提出一种操作简单生长速率极高的物理生长法,即单源闪蒸法制备有机无机杂化钙钛矿薄膜材料,并获得了高效率的太阳能电池器件,过程简单,易于操作,可重复性好。这种制备方法使用钙钛矿材料的溶液做蒸发源,在抽真空时使其在金属舟上形成平整的薄层,制备出的薄膜表面无空洞且均匀。本发明的单源闪蒸法属于高速蒸发法,易于大规模生产。通过此方法,最终可实现效率为6.26%的钙钛矿太阳能电池的制备。 The present invention proposes a physical growth method with simple operation and extremely high growth rate, that is, a single-source flash evaporation method to prepare organic-inorganic hybrid perovskite film materials, and obtain high-efficiency solar cell devices. The process is simple, easy to operate, and can Good repeatability. This preparation method uses the solution of the perovskite material as the evaporation source, and forms a flat thin layer on the metal boat when vacuuming, and the prepared film surface has no voids and is uniform. The single-source flash evaporation method of the present invention belongs to a high-speed evaporation method and is easy for large-scale production. Through this method, the preparation of perovskite solar cells with an efficiency of 6.26% can be finally realized.

附图说明 Description of drawings

图1为单源闪蒸法制备的CH3NH3PbI3薄膜X射线衍射图。 Fig. 1 is the X-ray diffraction pattern of CH 3 NH 3 PbI 3 thin film prepared by single-source flash evaporation method.

图2为单源闪蒸法制备的CH3NH3PbI3薄膜的扫描电子显微镜图。 Fig. 2 is a scanning electron microscope image of a CH 3 NH 3 PbI 3 thin film prepared by a single-source flash evaporation method.

图3为单源闪蒸法制备的CH3NH3PbI3薄膜太阳能电池的电流电压图,测试在1.5AM的光照条件下。 Fig. 3 is a current-voltage diagram of a CH 3 NH 3 PbI 3 thin-film solar cell prepared by a single-source flash evaporation method, tested under a light condition of 1.5 AM.

具体实施方式 Detailed ways

下面结合附图,对本发明的具体实施例作进一步的说明。 The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

实施例1Example 1

一种单源闪蒸法生长有机无机杂化钙钛矿材料及其平面型太阳能电池的制备方法,具有如下工艺过程和步骤: A method for preparing an organic-inorganic hybrid perovskite material grown by a single-source flash evaporation method and a planar solar cell has the following process and steps:

(1)    将透明导电玻璃SnO2:F作为沉积衬底,先采用曲拉通清洗表面,然后用清水将表面残余的曲拉通冲洗掉,之后采用丙酮超声清洗15分钟,然后用去离子水冲洗表面,之后再用乙醇超声清洗15分钟,再用去离子水冲洗表面,随后将其烘干。最后采用紫外臭氧处理10分钟。 (1) Use the transparent conductive glass SnO 2 :F as the deposition substrate, first use Triton to clean the surface, then rinse off the residual Triton on the surface with clean water, then use acetone to ultrasonically clean for 15 minutes, and then use deionized water Rinse the surface, then ultrasonically clean it with ethanol for 15 minutes, rinse the surface with deionized water, and dry it. Finally, UV-ozone treatment was used for 10 minutes.

(2)    在预处理后的透明导电玻璃SnO2:F上,采用磁控溅射的方法沉积TiO2,这一过程采用高纯TiO2作为溅射靶材,先将溅射室抽至5×10-3 Pa,然后通入Ar气,溅射气压保持在0.6Pa,溅射功率为150W,溅射时间36分钟,即可在透明导电玻璃SnO2:F上沉积一层50纳米厚的致密TiO2薄膜。 (2) On the pretreated transparent conductive glass SnO 2 :F, TiO 2 is deposited by magnetron sputtering. In this process, high-purity TiO 2 is used as the sputtering target, and the sputtering chamber is pumped to 5 ×10 -3 Pa, and then pass in Ar gas, the sputtering pressure is kept at 0.6Pa, the sputtering power is 150W, and the sputtering time is 36 minutes, a layer of 50nm thick can be deposited on the transparent conductive glass SnO 2 :F Dense TiO2 thin film.

(3)    将涂有50纳米的n型TiO2的透明导电玻璃SnO2:F放入真空蒸发设备的样品台上。随后把CH3NH3I与PbI2的粉末按照1.5:1的比例溶解于乙醇中,从而配制成CH3NH3PbI3溶液,其中溶液的质量百分比为40%。 (3) Put the transparent conductive glass SnO 2 :F coated with 50nm n-type TiO 2 on the sample stage of the vacuum evaporation equipment. Then the CH 3 NH 3 I and PbI 2 powders were dissolved in ethanol at a ratio of 1.5:1 to prepare a CH 3 NH 3 PbI 3 solution, wherein the mass percentage of the solution was 40%.

(4)    把CH3NH3PbI3溶液均匀的涂抹于钼片上。在腔体气压低于5×10-3 Pa和样品衬底温度为室温的条件下,通过闪蒸法蒸镀钙钛矿薄膜。将钙钛矿材料在1秒的时间内快速升温至1000℃,所用电流为200安培,整个蒸发时间为5秒。薄膜的厚度主要取决于溶液的用量和源与衬底之间的距离。一般500nm的薄膜需要的溶液量为100微升,源与衬底之间的距离约为12cm。通过该方法可实现无空洞的钙钛矿薄膜材料的高速沉积。薄膜的结构和表面形貌分别如图1和图2。 (4) Spread the CH 3 NH 3 PbI 3 solution evenly on the molybdenum sheet. The perovskite film was evaporated by flash evaporation under the condition that the chamber pressure was lower than 5×10 -3 Pa and the temperature of the sample substrate was room temperature. The temperature of the perovskite material is rapidly raised to 1000°C within 1 second, the current used is 200 amperes, and the entire evaporation time is 5 seconds. The thickness of the film mainly depends on the amount of solution used and the distance between the source and the substrate. Generally, the volume of solution required for a 500nm thin film is 100 microliters, and the distance between the source and the substrate is about 12cm. Through this method, high-speed deposition of void-free perovskite thin film materials can be achieved. The structure and surface morphology of the film are shown in Figure 1 and Figure 2, respectively.

(5)    在蒸镀完成的钙钛矿薄膜材料上旋涂空穴传输层Spiro-OMeTAD后,再蒸镀尺寸为0.5*1cm的银电极,完成钙钛矿太阳能电池的制备。 (5) Spin-coat the hole transport layer Spiro-OMeTAD on the vapor-deposited perovskite film material, and then vapor-deposit a silver electrode with a size of 0.5*1cm to complete the preparation of the perovskite solar cell.

通过以上方法所制得的有机无机杂化平面型太阳能电池在1.5AM的光照条件下,该器件短路电流可达15.7 mA/cm2,开路电压为820 mV,填充因子为0.49,该薄膜太阳能电池的能量效率为6.26%,如图3所示。无空穴传输层的器件效率为3.50%。 The organic-inorganic hybrid planar solar cell prepared by the above method has a short-circuit current of 15.7 mA/cm 2 , an open-circuit voltage of 820 mV, and a fill factor of 0.49 under the light conditions of 1.5 AM. The energy efficiency of 6.26%, as shown in Figure 3. The device efficiency without hole transport layer is 3.50%.

实施例2Example 2

本实施例步骤(1)、(2)、(3)与实施例1中的完全一致,不同之处在于, Steps (1), (2) and (3) of this embodiment are exactly the same as in Example 1, the difference is that

(4)    把CH3NH3PbI3溶液均匀的涂抹于钼片上。在蒸发室气压低于5×10-3 Pa后,充入氮气,使得蒸发室气压保持在0.6Pa。在样品衬底温度为室温的条件下,通过闪蒸法蒸镀钙钛矿薄膜。将钙钛矿材料在1秒的时间内快速升温至1000℃,所用电流为230安培,整个蒸发时间为5秒。 (4) Spread the CH 3 NH 3 PbI 3 solution evenly on the molybdenum sheet. After the pressure of the evaporation chamber is lower than 5×10 -3 Pa, nitrogen gas is filled to keep the pressure of the evaporation chamber at 0.6 Pa. Under the condition that the temperature of the sample substrate is room temperature, the perovskite film is evaporated by flash evaporation method. The temperature of the perovskite material is rapidly raised to 1000°C within 1 second, the current used is 230 amperes, and the entire evaporation time is 5 seconds.

(5)    在蒸镀完成的钙钛矿薄膜材料上旋涂空穴传输层Spiro-OMeTAD后,再蒸镀尺寸为2*2cm的银电极,完成钙钛矿太阳能电池的制备。 (5) Spin-coat the hole transport layer Spiro-OMeTAD on the vapor-deposited perovskite film material, and then vapor-deposit a silver electrode with a size of 2*2cm to complete the preparation of the perovskite solar cell.

步骤(4)中通入氮气后可以得到更大面积均匀的有机无机杂化钙钛矿薄膜。步骤(5)中通过沉积更大面积的银电极可获得与实例1中接近的太阳能电池效率,约为6%左右。  In the step (4), after passing nitrogen gas, a larger uniform organic-inorganic hybrid perovskite film can be obtained. In step (5), the solar cell efficiency close to that in Example 1 can be obtained by depositing a larger area of silver electrodes, which is about 6%. the

Claims (9)

1. a preparation method for single source flash method growth organic inorganic hybridization perovskite material and plane solar cell thereof, is characterized in that having following technical process and step:
A, transparent conducting glass is carried out to preliminary treatment;
B, on transparent conducting glass, deposit N-shaped TiO 2or ZnO, then put on the sample stage of vacuum evaporation apparatus as substrate;
C, organic inorganic hybridization perovskite material is dissolved in organic solvent, is prepared into organic inorganic hybridization perovskite solution or powder;
D, evaporation of metal boat is carried out to preliminary treatment;
E, organic inorganic hybridization perovskite solution or powder are laid on evaporation of metal boat uniformly;
F, at vaporization chamber air pressure lower than 5 × 10 -3under the condition of the vacuum of Pa or inert gas or nitrogen atmosphere, by flash method by organic inorganic hybridization perovskite evaporation to substrate, form film;
G, the film that evaporation is completed carry out post annealed processing;
H, on the organic inorganic hybridization perovskite thin film material preparing spin coating hole transmission layer;
I, electrode evaporation, obtain plane organic inorganic hybridization perovskite solar cell.
2. the preparation method of single source according to claim 1 flash method growth organic inorganic hybridization perovskite material and plane solar cell thereof, is characterized in that, in described step a, transparent conducting glass is FTO, mixes the SnO of F 2; Or AZO, mix the ZnO of Al; Or ITO, mix the In of Sn 2o 3; Pre-treatment step is: first adopt Qu Latong to clean glass surface, then with deionized water, the remaining Qu Latong in surface is rinsed out, adopt afterwards acetone ultrasonic cleaning 15 minutes, then use deionized water rinsing surface, use again afterwards ethanol ultrasonic cleaning 15 minutes, use again deionized water rinsing surface, subsequently by its oven dry; Finally adopt UV ozone or Microwave plasma treatment surface.
3. the preparation method of single source according to claim 1 flash method growth organic inorganic hybridization perovskite material and plane solar cell thereof, is characterized in that, deposits N-shaped TiO in described step b on transparent conducting glass 2or ZnO, deposition process adopts magnetron sputtering method, spin coating or spray-on process; The TiO of gained 2to use as substrate with ZnO, deposit organic inorganic hybridization perovskite material thereon.
4. the preparation method of single source according to claim 1 flash method growth organic inorganic hybridization perovskite material and plane solar cell thereof, is characterized in that, in described step c, organic inorganic hybridization perovskite solution or powder refer to and comprise CH 3nH 3pbX 3and CH 3nH 3snX 3at interior ABX 3solution or the powder of type organic inorganic hybridization perovskite material, wherein A refers to similar CH 3nH 3positive monovalence organic molecule group, B is the divalent metal element of making a comment or criticism, X refers to negative monovalence halogen.
5. the preparation method of single source according to claim 1 flash method growth organic inorganic hybridization perovskite material and plane solar cell thereof, is characterized in that, in described steps d, evaporation of metal boat refers to tantalum piece or molybdenum sheet or tungsten sheet; Evaporation of metal boat is carried out to preliminary treatment, refer to and first adopt acetone, ethanol and deionized water to clean successively to metal surface, dry up rear with UV ozone or plasma treatment metal surface.
6. the preparation method of single source according to claim 1 flash method growth organic inorganic hybridization perovskite material and plane solar cell thereof, it is characterized in that, in described step f, refer to vaporization chamber air pressure is evacuated to lower than 5 × 10 by flash method evaporation organic inorganic hybridization perovskite thin film -3pa, continue to keep pumping speed to keep this vacuum degree, or close vacuum pump or valve, or pass into inert gas or nitrogen to 1-100Pa, then load 80-250A electric current, organic inorganic hybridization perovskite solution or powder are rapidly heated to 1000-1500 DEG C within the time that is less than 1 second, and whole evaporation process is less than 5 seconds.
7. the preparation method of single source according to claim 1 flash method growth organic inorganic hybridization perovskite material and plane solar cell thereof, it is characterized in that, the film in described step g, evaporation being completed carries out post annealed processing and refers to that organic inorganic hybridization perovskite thin film that evaporation is completed toasts 5-40 minute under the condition of nitrogen atmosphere and 90-150 DEG C, forms film fine and close, well-crystallized.
8. the preparation method of single source according to claim 1 flash method growth organic inorganic hybridization perovskite material and plane solar cell thereof, it is characterized in that, in described step h, on the organic inorganic hybridization perovskite thin film material preparing, spin coating hole transmission layer refers to Spiro-OMeTAD or P3HT is spin-coated on as hole transmission layer on the perovskite thin film material that evaporation completes.
9. the preparation method of single source according to claim 1 flash method growth organic inorganic hybridization perovskite material and plane solar cell thereof, it is characterized in that, electrode evaporation in described step I, obtain plane organic inorganic hybridization perovskite solar cell and refer to the material surface after spin coating hole transmission layer, by gold or the silver electrode of the method evaporation definite shape of vacuum evaporation, thereby obtain plane organic inorganic hybridization perovskite solar cell.
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