CN104051655A - Inverted organic light emission diode device and manufacturing method thereof - Google Patents
Inverted organic light emission diode device and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims description 73
- 238000005401 electroluminescence Methods 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 29
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 24
- JTDNNCYXCFHBGG-UHFFFAOYSA-L tin(ii) iodide Chemical compound I[Sn]I JTDNNCYXCFHBGG-UHFFFAOYSA-L 0.000 claims description 24
- UAYWVJHJZHQCIE-UHFFFAOYSA-L zinc iodide Chemical compound I[Zn]I UAYWVJHJZHQCIE-UHFFFAOYSA-L 0.000 claims description 24
- 230000005540 biological transmission Effects 0.000 claims description 20
- 229910052741 iridium Inorganic materials 0.000 claims description 20
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 20
- 238000001704 evaporation Methods 0.000 claims description 19
- 230000008020 evaporation Effects 0.000 claims description 19
- 238000004020 luminiscence type Methods 0.000 claims description 19
- 238000001771 vacuum deposition Methods 0.000 claims description 19
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 18
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 17
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 16
- 229910021595 Copper(I) iodide Inorganic materials 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 238000002207 thermal evaporation Methods 0.000 claims description 13
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 12
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims description 12
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical group I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 claims description 12
- 229940108184 stannous iodide Drugs 0.000 claims description 12
- 229910052725 zinc Inorganic materials 0.000 claims description 12
- 239000011701 zinc Substances 0.000 claims description 12
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 claims description 10
- -1 4, 6-difluorophenyl Chemical group 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000004305 biphenyl Substances 0.000 claims description 8
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 8
- XSCHRSMBECNVNS-UHFFFAOYSA-N quinoxaline Chemical compound N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 claims description 8
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 claims description 8
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- OSQXTXTYKAEHQV-WXUKJITCSA-N 4-methyl-n-[4-[(e)-2-[4-[4-[(e)-2-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]ethenyl]phenyl]phenyl]ethenyl]phenyl]-n-(4-methylphenyl)aniline Chemical group C1=CC(C)=CC=C1N(C=1C=CC(\C=C\C=2C=CC(=CC=2)C=2C=CC(\C=C\C=3C=CC(=CC=3)N(C=3C=CC(C)=CC=3)C=3C=CC(C)=CC=3)=CC=2)=CC=1)C1=CC=C(C)C=C1 OSQXTXTYKAEHQV-WXUKJITCSA-N 0.000 claims description 6
- HSEVUSRQUCWDNF-UHFFFAOYSA-N NCC=1C=C(C=CC1)N(C1=CC=C(C=C1)C1=CC=C(N(C2=CC=CC=C2)C2=CC(=CC=C2)CN)C=C1)C1=CC=CC=C1 Chemical class NCC=1C=C(C=CC1)N(C1=CC=C(C=C1)C1=CC=C(N(C2=CC=CC=C2)C2=CC(=CC=C2)CN)C=C1)C1=CC=CC=C1 HSEVUSRQUCWDNF-UHFFFAOYSA-N 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical class C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 claims description 6
- LPCWDYWZIWDTCV-UHFFFAOYSA-N 1-phenylisoquinoline Chemical compound C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 LPCWDYWZIWDTCV-UHFFFAOYSA-N 0.000 claims description 4
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 claims description 4
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical class C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 4
- BCIKXVCYWZORHA-UHFFFAOYSA-N 5,6,11,12-tetraphenylchrysene Chemical compound C1(=CC=CC=C1)C1=C(C2=CC=CC=C2C=2C(=C(C=3C=CC=CC=3C=21)C1=CC=CC=C1)C1=CC=CC=C1)C1=CC=CC=C1 BCIKXVCYWZORHA-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims description 4
- 235000010290 biphenyl Nutrition 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 4
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 4
- 229920002554 vinyl polymer Polymers 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 238000002347 injection Methods 0.000 abstract description 15
- 239000007924 injection Substances 0.000 abstract description 15
- 238000013461 design Methods 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 abstract description 3
- 238000000926 separation method Methods 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 description 29
- 239000010408 film Substances 0.000 description 28
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- 239000011521 glass Substances 0.000 description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- 238000004506 ultrasonic cleaning Methods 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 4
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- CECAIMUJVYQLKA-UHFFFAOYSA-N iridium 1-phenylisoquinoline Chemical compound [Ir].C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 CECAIMUJVYQLKA-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 150000005360 2-phenylpyridines Chemical class 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 2
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- YRZZLAGRKZIJJI-UHFFFAOYSA-N oxyvanadium phthalocyanine Chemical compound [V+2]=O.C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 YRZZLAGRKZIJJI-UHFFFAOYSA-N 0.000 description 2
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to an inverted organic light emission diode device comprising a substrate, a cathode layer, a pn junction layer, an organic light emission function layer, and an anode layer. The layers are successively laminated. The cathode layer is a transparent conductive oxide film; the pn junction layer includes a p type layer approaching the cathode layer and an n type layer arranged on the p type layer; and a light emission layer is arranged in the organic light emission function layer. According to the inverted organic light emission diode device, the transparent conductive oxide film is used for forming the cathode layer and serving as an emergent electrode; and the pn junction layer is designed on the cathode layer and generates charge separation at an exterior electric field, and electrons and holes are respectively transmitted to the organic light emission function layer and the cathode layer from the junctions of the pn junction layer. Therefore, the electrons are injected into the organic light emission function layer, thereby solving a problem of difficult electron injection. The inverted organic light emission diode device prepared based on the design can obtain the high luminous efficiency.
Description
Technical field
The present invention relates to electroluminescent technology field, especially relate to a kind of inversion type organic electroluminescence device and preparation method thereof.
Background technology
Organic electroluminescent (Organic Light Emission Diode, hereinafter to be referred as OLED), have that brightness is high, material range of choice is wide, driving voltage is low, entirely solidify the characteristics such as active illuminating, have the advantages such as high definition, wide viewing angle and fast response time simultaneously, a kind of Display Technique and light source that has potentiality, meeting information age mobile communication and the development trend of information demonstration and the requirement of green lighting technique, is current lot of domestic and foreign researcher's focal point.
At present, the development of OLED is very rapid, and in order to obtain its more application, researchers have developed the OLED luminescent device of various structures, such as top emission light-emitting device or inverted type light-emitting device etc.At present OLED device can be prepared into large area, high efficiency AMOLED device with TFT configuration, and the TFT of existing use comprises two kinds of P type and N-types.P type comprises LTPS and oxide TFT, and N-type TFT processes with outside α-Si preparation, also can use LTPS and Preparation, adopts the OLED of inversion type can expand the preparation scheme of AMOLED and reduce costs.
But for the inversion OLED luminescent device of lower bright dipping, conventionally need a high transparent electrode as negative electrode, conventional its transmitance of sheet metal of tradition only has 60～70% left and right, and excessively thin metallic film brings challenges to the encapsulation of device.And although its transmitance of transparent conductive oxide film is high, because its work content is higher, unfavorable to the injection of electronics, make the luminous efficiency of device be difficult to improve.
Summary of the invention
Based on this, be necessary to provide inversion type organic electroluminescence device that a kind of luminous efficiency is higher and preparation method thereof.
A kind of inversion type organic electroluminescence device, comprise the substrate being cascading, cathode layer, pn ties layer, organic luminescence function layer and anode layer, described cathode layer is transparent conductive oxide film, described pn knot layer comprises near the p-type layer of described cathode layer and is located at the N-shaped layer on described p-type layer, wherein, the material of described p-type layer is cuprous iodide, zinc iodide, cesium iodide or stannous iodide are entrained in CuPc, the composite material forming in Phthalocyanine Zinc or ranadylic phthalocyanine, described cuprous iodide, zinc iodide, the mass percent that cesium iodide or stannous iodide account for described p-type layer is 1～20%, the material of described N-shaped layer is ten hexafluoro CuPcs or ten hexafluoro Phthalocyanine Zinc, in described organic luminescence function layer, be provided with luminescent layer.
In an embodiment, described transparent conductive oxide film is indium and tin oxide film, indium-zinc oxide film, aluminium zinc oxide film or gallium zinc oxide film therein.
Therein in an embodiment, described organic luminescence function layer also comprises the hole transmission layer of the close described anode layer that is located at described luminescent layer one side and is located at least one in the electron transfer layer of close described cathode layer of described luminescent layer opposite side.
Therein in an embodiment, the material of described hole transmission layer is 4,4 ＇, 4 ＂-tri-(2-naphthyl phenyl amino) triphenylamine, N, N ＇-diphenyl-N, N ＇-bis-(1-naphthyl)-1,1 ＇-biphenyl-4,4 ＇-diamines, 4,4 ＇, 4 ＂-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine, N, N ＇-diphenyl-N, N ＇-bis-(3-aminomethyl phenyl)-1,1 ＇-biphenyl-4,4 ＇-diamines or 4,4 ＇, 4 ＂-tri-(carbazole-9-yl) triphenylamine.
Therein in an embodiment, the material of described electron transfer layer is 2-(4-xenyl)-5-(4-the tert-butyl group) phenyl-1,3,4-diazole, 4,7-diphenyl-o-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene or 1,2,4-triazole derivative.
Therein in an embodiment, the material of described luminescent layer is that phosphor material is entrained in the composite material forming in material of main part, wherein, described phosphor material is 4-(dintrile methyl)-2-butyl-6-(1, 1, 7, 7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, two (4, 6-difluorophenyl pyridine-N, C2) pyridine formyl closes iridium, two (4, 6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes iridium, two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) close iridium, three (1-phenyl-isoquinolin) close iridium and three (2-phenylpyridine) and close at least one in iridium, described material of main part is 4, 4 ＇-bis-(9-carbazole) biphenyl, oxine aluminium, 1, 3, 5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene or N, N ＇-diphenyl-N, N ＇-bis-(1-naphthyl)-1, 1 ＇-biphenyl-4, described in 4 ＇-diamines, the mass percent of phosphor material and described material of main part is 1～10%.
In an embodiment, the material of described luminescent layer is 4,4 ＇-bis-(2,2-diphenylethyllene)-1,1 ＇-biphenyl, 4,4 ＇-bis-[4-(di-p-tolyl amino) styryl] biphenyl or 5,6,11,12-tetraphenyl naphthonaphthalene therein.
In an embodiment, the material of described anode layer is at least one in Ag, Al, Au and Pt therein.
A manufacture method for inversion type organic electroluminescence device, comprises the steps:
In vacuum coating system, at the surface sputtering layer of transparent conductive oxide film of substrate as cathode layer;
In vacuum coating system, pass through thermal evaporation techniques, on described cathode layer surface, evaporation is prepared p-type layer and is prepared N-shaped layer at the surperficial evaporation of described p-type layer, form pn knot layer, wherein, the material of described p-type layer is that cuprous iodide, zinc iodide, cesium iodide or stannous iodide are entrained in the composite material forming in CuPc, Phthalocyanine Zinc or ranadylic phthalocyanine, described cuprous iodide, zinc iodide, cesium iodide or stannous iodide account for 1～20% of mass percent in described p-type layer, and the material of described N-shaped layer is ten hexafluoro CuPcs or ten hexafluoro Phthalocyanine Zinc;
In vacuum coating system, on described N-shaped layer, evaporation is prepared the organic luminescence function layer that comprises luminescent layer, and utilize thermal evaporation or electron beam evaporation technique to prepare anode layer on described organic luminescence function layer, obtain described inversion type organic electroluminescence device.
Above-mentioned inversion type organic electroluminescence device adopts transparent conductive oxide film to form cathode layer and conduct goes out optoelectronic pole, and on cathode layer, design a pn and tied layer, under external electrical field, there is separation of charge in this pn knot layer, transmit to organic luminescence function layer and cathode layer respectively from the node of pn knot layer in electronics and hole, thereby make electronic injection in organic luminescence function layer.Aspect the injection of external electrical, owing to having adopted the combination of P type semiconductor and transparent conductive oxide film, solve the problem of electronic injection difficulty, therefore electronic injection ratio is easier to, the inversion type organic electroluminescence device of preparation, can obtain higher luminous efficiency on this basis.
Brief description of the drawings
Fig. 1 is the structural representation of the inversion type organic electroluminescence device of an execution mode;
The voltage-to-current density characteristic curve of Fig. 2 inversion type organic electroluminescence device that to be embodiment 1 make with comparative example 1.
Embodiment
Below in conjunction with drawings and the specific embodiments, inversion type organic electroluminescence device is described in further detail.
As shown in Figure 1, the inversion type organic electroluminescence device 100 of an execution mode comprises the substrate 110, cathode layer 120, pn knot layer 130, organic luminescence function layer 140 and the anode layer 150 that are cascading.
Substrate 110 preferably adopts clear glass to make.
Cathode layer 120 is transparent conductive oxide film, as indium tin oxide (ITO) film, indium-zinc oxide (IZO) film, aluminium zinc oxide (AZO) film or gallium zinc oxide (GZO) film.The thickness of cathode layer 120 is between 70～200nm.
Pn knot layer 130 comprises near the p-type layer 132 of cathode layer 120 and is located at the N-shaped layer 134 on p-type layer 132.The material of p-type layer 132 is that the material of described p-type layer is that cuprous iodide, zinc iodide, cesium iodide or stannous iodide are entrained in the composite material forming in CuPc, Phthalocyanine Zinc or ranadylic phthalocyanine, wherein, to account for the mass percent of p-type layer 132 be 1～20% for cuprous iodide, zinc iodide, cesium iodide or stannous iodide.The thickness of p-type layer 132 is 4～15nm.The material of N-shaped layer 134 is ten hexafluoro CuPcs or ten hexafluoro Phthalocyanine Zinc.The thickness of N-shaped layer 134 is 1～10nm.
Organic luminescence function layer 140 comprises the electron transfer layer 142 that is located on pn knot layer 130, is located at the luminescent layer 144 on electron transfer layer 142 and is located at the hole transmission layer 146 on luminescent layer 144.
The material of electron transfer layer 142 is 2-(4-xenyl)-5-(4-the tert-butyl group) phenyl-1,3,4-diazole (PBD), 4,7-diphenyl-o-phenanthroline (Bphen), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP) or 1,2,4-triazole derivative (TAZ).The thickness of electron transfer layer 142 is between 20～60nm.
The material of hole transmission layer 146 is 4,4 ＇, 4 ＂-tri-(2-naphthyl phenyl amino) triphenylamine (2-TNATA), N, N ＇-diphenyl-N, N ＇-bis-(1-naphthyl)-1,1 ＇-biphenyl-4,4 ＇-diamines (NPB), 4,4 ＇, 4 ＂-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA), N, N ＇-diphenyl-N, N ＇-bis-(3-aminomethyl phenyl)-1,1 ＇-biphenyl-4,4 ＇-diamines (TPD) or 4,4 ＇, 4 ＂-tri-(carbazole-9-yl) triphenylamine (TCTA).The thickness of hole transmission layer 146 is between 20～60nm.
The material phosphor material of luminescent layer 144 is entrained in the composite material forming in material of main part.Wherein, phosphor material is 4-(dintrile methyl)-2-butyl-6-(1, 1, 7, 7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), two (4, 6-difluorophenyl pyridine-N, C2) pyridine formyl closes iridium (FIrpic), two (4, 6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes iridium (FIr6), two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) close iridium (Ir (MDQ) 2 (acac)), three (1-phenyl-isoquinolin) close iridium (Ir (piq) 3) and three (2-phenylpyridines) close at least one in iridium (Ir (ppy) 3).Material of main part is 4,4 ＇-bis-(9-carbazole) biphenyl (CBP), oxine aluminium (Alq
3), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi) or N, N ＇-diphenyl-N, N ＇-bis-(1-naphthyl)-1,1 ＇-biphenyl-4,4 ＇-diamines (NPB).The mass percent of phosphor material and material of main part is 1～10%.Or the material of luminescent layer 144 is 4,4 ＇-bis-(2,2-diphenylethyllene)-1,1 ＇-biphenyl (DPVBi), 4,4 ＇-bis-[4-(di-p-tolyl amino) styryl] biphenyl (DPAVBi) or 5,6,11,12-tetraphenyl naphthonaphthalene (Rubrene).The thickness of luminescent layer 144 is between 1～20nm.
The material of anode layer 150 is at least one in Ag, Al, Au and Pt.
Above-mentioned inversion type organic electroluminescence device adopts transparent conductive oxide film to form cathode layer and conduct goes out optoelectronic pole, and on cathode layer, design a pn and tied layer, under external electrical field, there is separation of charge in this pn knot layer, transmit to organic luminescence function layer and cathode layer respectively from the node of pn knot layer in electronics and hole, thereby make electronic injection in organic luminescence function layer.Aspect the injection of external electrical, owing to having adopted the combination of P type semiconductor and transparent conductive oxide film, solve the problem of electronic injection difficulty, therefore electronic injection ratio is easier to, the inversion type organic electroluminescence device of preparation, can obtain higher luminous efficiency on this basis.
In addition, present embodiment also provides a kind of manufacture method of inversion type organic electroluminescence device, comprises the steps:
Step 1: in vacuum coating system, at clean substrate surface sputter layer of transparent conductive oxide film as cathode layer.
Substrate preferably adopts clear glass to make.
Cathode layer is transparent conductive oxide film, as indium tin oxide (ITO) film, indium-zinc oxide (IZO) film, aluminium zinc oxide (AZO) film or gallium zinc oxide (GZO) film.The thickness of cathode layer is between 70～200nm.
Step 2: in vacuum coating system, by thermal evaporation techniques, evaporation is prepared p-type layer and prepared N-shaped layer at the surperficial evaporation of p-type layer on cathode layer surface, forms pn knot layer.
Pn knot layer comprises near the p-type layer of cathode layer and is located at the N-shaped layer on p-type layer.The material of p-type layer is that the material of described p-type layer is that cuprous iodide, zinc iodide, cesium iodide or stannous iodide are entrained in the composite material forming in CuPc, Phthalocyanine Zinc or ranadylic phthalocyanine, wherein, to account for the mass percent of p-type layer be 1～20% for cuprous iodide, zinc iodide, cesium iodide or stannous iodide.The thickness of p-type layer is 4～15nm.The material of N-shaped layer is ten hexafluoro CuPcs or ten hexafluoro Phthalocyanine Zinc.The thickness of N-shaped layer is 1～10nm.
Step 3: in vacuum coating system, evaporation is prepared the organic luminescence function layer that comprises luminescent layer on N-shaped layer, and utilizes thermal evaporation or electron beam evaporation technique to prepare anode layer on organic luminescence function layer, obtains inversion type organic electroluminescence device.
Organic luminescence function layer comprises the electron transfer layer that is located on pn knot layer, is located at the luminescent layer on electron transfer layer and is located at the hole transmission layer on luminescent layer.
The material of electron transfer layer is 2-(4-xenyl)-5-(4-the tert-butyl group) phenyl-1,3,4-diazole (PBD), 4,7-diphenyl-o-phenanthroline (Bphen), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP) or 1,2,4-triazole derivative (TAZ).The thickness of electron transfer layer is between 20～60nm.
The material of hole transmission layer is 4,4 ＇, 4 ＂-tri-(2-naphthyl phenyl amino) triphenylamine (2-TNATA), N, N ＇-diphenyl-N, N ＇-bis-(1-naphthyl)-1,1 ＇-biphenyl-4,4 ＇-diamines (NPB), 4,4 ＇, 4 ＂-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA), N, N ＇-diphenyl-N, N ＇-bis-(3-aminomethyl phenyl)-1,1 ＇-biphenyl-4,4 ＇-diamines (TPD) or 4,4 ＇, 4 ＂-tri-(carbazole-9-yl) triphenylamine (TCTA).The thickness of hole transmission layer is between 20～60nm.
The material phosphor material of the luminescent layer of preparation is entrained in the composite material forming in material of main part.Wherein, phosphor material is 4-(dintrile methyl)-2-butyl-6-(1, 1, 7, 7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), two (4, 6-difluorophenyl pyridine-N, C2) pyridine formyl closes iridium (FIrpic), two (4, 6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes iridium (FIr6), two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) close iridium (Ir (MDQ) 2 (acac)), three (1-phenyl-isoquinolin) close iridium (Ir (piq) 3) and three (2-phenylpyridines) close at least one in iridium (Ir (ppy) 3).Material of main part is 4,4 ＇-bis-(9-carbazole) biphenyl (CBP), oxine aluminium (Alq
3), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi) or N, N ＇-diphenyl-N, N ＇-bis-(1-naphthyl)-1,1 ＇-biphenyl-4,4 ＇-diamines (NPB).The mass percent of phosphor material and material of main part is 1～10%.Or the material of luminescent layer is 4,4 ＇-bis-(2,2-diphenylethyllene)-1,1 ＇-biphenyl (DPVBi), 4,4 ＇-bis-[4-(di-p-tolyl amino) styryl] biphenyl (DPAVBi) or 5,6,11,12-tetraphenyl naphthonaphthalene (Rubrene).The thickness of luminescent layer is between 1～20nm.
The material of anode layer is at least one in Ag, Al, Au and Pt.
In this preparation technology, the operating pressure of preparation is 1 × 10
-5～1 × 10
-3pa, the evaporation rate of organic material is between 0.1-2nm/s, and the evaporation rate of inorganic material is between 0.01-0.5nm/s, and the sputtering rate of oxide semiconductor film is between 1-5nm/s.
Above-mentioned preparation process principle is simple, low for equipment requirements, easy to utilize.
Be below specific embodiment and comparative example part, wherein, "/" represents stacked, and ": " represents that the former is entrained in and in the latter, form composite material.
Embodiment 1
The structure of inversion type organic electroluminescence device is: glass substrate/ITO (100nm)/CuI:CuPc (5%, 5nm)/F
16cuPc (4nm)/Bphen (30nm)/DCJTB:Alq
3(1%, 1nm)/NPB (30nm)/Ag (100nm).
The manufacture method of the present embodiment inversion type organic electroluminescence device, comprises following step:
Step 1, provide glass substrate, substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, after cleaning up, in ultrasonic wave, process 20 minutes with isopropyl alcohol, acetone successively, and then dry up with nitrogen.
Step 2, be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, preparing a layer thickness in substrate surface sputter is that the ito thin film of 100nm is as cathode layer.
Step 3, be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, prepare successively p-type layer and the N-shaped layer of pn knot layer by thermal evaporation techniques on cathode layer surface, wherein, the material of p-type layer is that CuI is entrained in the composite material (mass percent that CuI accounts for p-type layer is 10%) forming in CuPc, and thickness is 5nm; The material of the N-shaped layer of preparation is F
16znPc, thickness is 4nm.
Step 4, to prepare successively thickness on pn knot layer surface be that the Bphen of 30nm is as the DCJTB:Alq of electron transfer layer, thickness 1nm
3(1%) NPB that is 30nm as luminescent layer and thickness is as hole transmission layer.Wherein luminescent layer is that luminescent material DCJTB is entrained in material of main part Alq
3in, DCJTB and Alq
3mass percent be 1%.
Step 5, utilize Ag that thermal evaporation techniques is 100nm in hole transmission layer surface preparation a layer thickness as anode layer.
In above-mentioned preparation technology, the operating pressure of preparation is 5 × 10
-4pa, the evaporation rate of organic material is 0.1nm/s, and the evaporation rate of inorganic material is 0.01nm/s, and the sputtering rate of ITO is 5nm/s.
Embodiment 2
The structure of inversion type organic electroluminescence device is: glass substrate/AZO (70nm)/ZnI
2: ZnPc (20%, 15nm)/F
16znPc (10nm)/TPBi (60nm)/Ir (piq)
3: CBP (8%, 12nm)/2-TNATA (60nm)/Al (70nm).
The manufacture method of the present embodiment inversion type organic electroluminescence device, comprises following step:
Step 1, provide glass substrate, substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, after cleaning up, in ultrasonic wave, process 20 minutes with isopropyl alcohol, acetone successively, and then dry up with nitrogen.
Step 2, in vacuum coating system, preparing a layer thickness in substrate surface sputter is that the AZO film of 70nm is as cathode layer.
Step 3, be 1 × 10 in vacuum degree
-3in the vacuum coating system of Pa, by thermal evaporation techniques, prepare successively p-type layer and the N-shaped layer of pn knot layer on cathode layer surface, wherein, the material of the p-type layer of preparation is ZnI
2be entrained in the composite material (ZnI forming in ZnPc
2the mass percent that accounts for p-type layer is 20%), thickness is 15nm; The material of the N-shaped layer of preparation is F
16znPc, thickness is 10nm.
Step 4, prepare successively thickness on pn knot layer surface be the Ir (piq) that the TPBi of 60nm is 12nm as electron transfer layer, thickness
3: the 2-TNATA that CBP (8%) is 60nm as luminescent layer and thickness is as hole transmission layer.Wherein luminescent layer is luminescent material Ir (piq)
3be entrained in material of main part CBP Ir (piq)
3with the mass percent of CBP be 8%.
Step 5, utilize electron beam evaporation technique to prepare Al layer that thickness is 70nm on hole transmission layer surface as anode layer.
In this preparation technology, the operating pressure of preparation is 1 × 10
-3pa, the evaporation rate of organic material is 2nm/s, and the evaporation rate of inorganic material is 0.5nm/s, and the sputtering rate of AZO is 2nm/s.
Embodiment 3
The structure of inversion type organic electroluminescence device is: glass substrate/GZO (200nm)/SnI
2: VOPc (1%, 4nm)/F
16cuPc (1nm)/PBD (20nm)/Ir (ppy)
3: CBP (10%, 15nm)/m-MTDATA (20nm)/Au (200nm).
The manufacture method of the inversion type organic electroluminescence device of the present embodiment, comprises following step:
Step 1, provide glass substrate, substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, after cleaning up, in ultrasonic wave, process 20 minutes with isopropyl alcohol, acetone successively, and then dry up with nitrogen.
Step 2, in vacuum coating system, preparing thickness in substrate surface sputter is that the GZO film of 200nm is as cathode layer.
Step 3, be 1 × 10 in vacuum degree
-5in the vacuum coating system of Pa, by thermal evaporation techniques, prepare successively p-type layer and N-shaped layer in pn knot layer at cathode surface, wherein the material of the p-type layer of preparation is SnI
2be entrained in the composite material (SnI forming in VOPc
2the mass percent that accounts for p-type layer is 5%), thickness is 4nm; The material of the N-shaped layer of preparation is F
16cuPc, thickness is 1nm.
Step 4, prepare successively thickness on pn knot layer surface be the Ir (ppy) that the PBD layer of 20nm is 15nm as electron transfer layer, thickness
3: the m-MTDATA that CBP (10%) is 20nm as luminescent layer and thickness is as hole transmission layer.Wherein luminescent layer is luminescent material Ir (ppy)
3be entrained in material of main part CBP Ir (ppy)
3with the mass percent of CBP be 10%.Step 5, utilize thermal evaporation techniques to prepare Au layer that thickness is 200nm on hole transmission layer surface as anode layer.
In this preparation technology, the operating pressure of preparation is 1 × 10
-5pa, the evaporation rate of organic material is 1nm/s, and the evaporation rate of inorganic material is 0.1nm/s, and the sputtering rate of GZO is 1nm/s.
Embodiment 4
The structure of inversion type organic electroluminescence device is: glass substrate/IZO (100nm)/CsI:CuPc (2%, 8nm)/F
16cuPc (10nm)/BCP (30nm)/DPVBi (20nm)/TPD (40nm)/Pt (70nm).
The manufacture method of the inversion type organic electroluminescence device of the present embodiment, comprises following step:
Step 1, provide glass substrate, substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, use successively isopropyl alcohol after cleaning up, acetone is processed 20 minutes in ultrasonic wave, and then dries up with nitrogen.
Step 2, in vacuum coating system, preparing a layer thickness in substrate surface sputter is that the IZO film of 100nm is as cathode layer.
Step 3, be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, pass through thermal evaporation techniques at cathode surface, p-type layer and the N-shaped layer of preparing successively pn knot layer, the material of the p-type layer of preparation is that CsI is entrained in the composite material (mass percent that CsI accounts for p-type layer is 2%) forming in CuPc, thickness is 8nm; The material of the N-shaped layer of preparation is F
16cuPc, thickness is 10nm.
Step 4, TPD that prepare successively thickness on pn knot layer surface be the BCP of the 30nm DPVBi that is 20nm as electron transfer layer, thickness is 40nm as luminescent layer and thickness are as hole transmission layer.
Step 5, utilize Pt that electron beam evaporation technique is 70nm in hole transmission layer surface preparation a layer thickness as anode layer.
In this preparation technology, the operating pressure of preparation is 5 × 10
-4pa, the evaporation rate of organic material is 1nm/s, and the evaporation rate of inorganic material is 0.1nm/s, and the sputtering rate of IZO is 2nm/s.
Comparative example 1
The structure of inversion type organic electroluminescence device is: glass substrate/ITO (100nm)/Bphen (30nm)/DCJTB:Alq
3(1%, 1nm)/NPB (30nm)/Ag (100nm).
The manufacture method of this inversion type organic electroluminescence device, comprises following step:
Step 1, provide glass substrate, substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, use successively isopropyl alcohol after cleaning up, acetone is processed 20 minutes in ultrasonic wave, and then dries up with nitrogen.
Step 2, in vacuum coating system, preparing a layer thickness in substrate surface sputter is that the ito thin film of 100nm is as cathode layer.
Step 3, be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, preparing successively thickness at cathode surface is the DCJTB:Alq that the Bphen of 30nm is 1nm as electron transfer layer, thickness
3(DCJTB and Alq
3mass percent be 1%) NPB that is 30nm as luminescent layer, thickness is as hole transmission layer.
Step 4, utilize thermal evaporation or electron beam evaporation technique to prepare Ag that thickness is 100nm on hole transmission layer surface as anode layer.
Table 1 is embodiment 1,2,3,4 and the luminescent properties data of the device of comparative example 1 made, as follows:
Table 1
| ? | Starting resistor | Luminous efficiency (lm/W) |
| Embodiment 1 | 2.5 | 10.0 |
| Embodiment 2 | 2.5 | 13.2 |
| Embodiment 3 | 2.6 | 19.8 |
| Embodiment 4 | 2.8 | 12.1 |
| Comparative example 1 | 3.2 | 6.2 |
As can be seen from Table 1, the inversion type organic electroluminescence device that embodiment 1-4 makes, compared with the device of comparative example, because the injection barrier of electronics reduces, therefore can improve the injection efficiency of electronics, thereby obtains lower starting resistor and light efficiency.
Fig. 2 is the organic electroluminescence device of embodiment 1 made and the voltage-to-current density characteristic curve of the organic electroluminescence device that comparative example 1 is made.As can be seen from Figure: under the identical condition of driving voltage, due to the electronic injection difficulty of comparative example 1, and the electronic injection of embodiment 1 is easy, and therefore embodiment 1 has higher Injection Current.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (9)
1. an inversion type organic electroluminescence device, it is characterized in that, comprise the substrate being cascading, cathode layer, pn ties layer, organic luminescence function layer and anode layer, described cathode layer is transparent conductive oxide film, described pn knot layer comprises near the p-type layer of described cathode layer and is located at the N-shaped layer on described p-type layer, wherein, the material of described p-type layer is cuprous iodide, zinc iodide, cesium iodide or stannous iodide are entrained in CuPc, the composite material forming in Phthalocyanine Zinc or ranadylic phthalocyanine, described cuprous iodide, zinc iodide, the mass percent that cesium iodide or stannous iodide account for described p-type layer is 1～20%, the material of described N-shaped layer is ten hexafluoro CuPcs or ten hexafluoro Phthalocyanine Zinc, in described organic luminescence function layer, be provided with luminescent layer.
2. inversion type organic electroluminescence device as claimed in claim 1, is characterized in that, described transparent conductive oxide film is indium and tin oxide film, indium-zinc oxide film, aluminium zinc oxide film or gallium zinc oxide film.
3. inversion type organic electroluminescence device as claimed in claim 1, it is characterized in that, described organic luminescence function layer also comprises the hole transmission layer of the close described anode layer that is located at described luminescent layer one side and is located at least one in the electron transfer layer of close described cathode layer of described luminescent layer opposite side.
4. inversion type organic electroluminescence device as claimed in claim 3, it is characterized in that, the material of described hole transmission layer is 4,4 ＇, 4 ＂-tri-(2-naphthyl phenyl amino) triphenylamine, N, N ＇-diphenyl-N, N ＇-bis-(1-naphthyl)-1,1 ＇-biphenyl-4,4 ＇-diamines, 4,4 ＇, 4 ＂-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine, N, N ＇-diphenyl-N, N ＇-bis-(3-aminomethyl phenyl)-1,1 ＇-biphenyl-4,4 ＇-diamines or 4,4 ＇, 4 ＂-tri-(carbazole-9-yl) triphenylamine.
5. inversion type organic electroluminescence device as claimed in claim 3, is characterized in that, the material of described electron transfer layer is 2-(4-xenyl)-5-(4-the tert-butyl group) phenyl-1,3,4-diazole, 4,7-diphenyl-o-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene or 1,2,4-triazole derivative.
6. inversion type organic electroluminescence device as claimed in claim 1, it is characterized in that, the material of described luminescent layer is that phosphor material is entrained in the composite material forming in material of main part, wherein, described phosphor material is 4-(dintrile methyl)-2-butyl-6-(1, 1, 7, 7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, two (4, 6-difluorophenyl pyridine-N, C2) pyridine formyl closes iridium, two (4, 6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes iridium, two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) close iridium, three (1-phenyl-isoquinolin) close iridium and three (2-phenylpyridine) and close at least one in iridium, described material of main part is 4, 4 ＇-bis-(9-carbazole) biphenyl, oxine aluminium, 1, 3, 5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene or N, N ＇-diphenyl-N, N ＇-bis-(1-naphthyl)-1, 1 ＇-biphenyl-4, described in 4 ＇-diamines, the mass percent of phosphor material and described material of main part is 1～10%.
7. inversion type organic electroluminescence device as claimed in claim 1, it is characterized in that, the material of described luminescent layer is 4,4 ＇-bis-(2,2-diphenylethyllene)-1,1 ＇-biphenyl, 4,4 ＇-bis-[4-(di-p-tolyl amino) styryl] biphenyl or 5,6,11,12-tetraphenyl naphthonaphthalene.
8. inversion type organic electroluminescence device as claimed in claim 1, is characterized in that, the material of described anode layer is at least one in Ag, Al, Au and Pt.
9. a manufacture method for inversion type organic electroluminescence device, is characterized in that, comprises the steps:
In vacuum coating system, at the surface sputtering layer of transparent conductive oxide film of substrate as cathode layer;
In vacuum coating system, pass through thermal evaporation techniques, on described cathode layer surface, evaporation is prepared p-type layer and is prepared N-shaped layer at the surperficial evaporation of described p-type layer, form pn knot layer, wherein, the material of described p-type layer is that cuprous iodide, zinc iodide, cesium iodide or stannous iodide are entrained in the composite material forming in CuPc, Phthalocyanine Zinc or ranadylic phthalocyanine, described cuprous iodide, zinc iodide, cesium iodide or stannous iodide account for 1～20% of mass percent in described p-type layer, and the material of described N-shaped layer is ten hexafluoro CuPcs or ten hexafluoro Phthalocyanine Zinc;
In vacuum coating system, on described N-shaped layer, evaporation is prepared the organic luminescence function layer that comprises luminescent layer, and utilize thermal evaporation or electron beam evaporation technique to prepare anode layer on described organic luminescence function layer, obtain described inversion type organic electroluminescence device.
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Application publication date: 20140917 |