CN104051653A - Inversion-type organic light-emitting device and preparation method thereof - Google Patents
Inversion-type organic light-emitting device and preparation method thereof Download PDFInfo
- Publication number
- CN104051653A CN104051653A CN201310076703.8A CN201310076703A CN104051653A CN 104051653 A CN104051653 A CN 104051653A CN 201310076703 A CN201310076703 A CN 201310076703A CN 104051653 A CN104051653 A CN 104051653A
- Authority
- CN
- China
- Prior art keywords
- layer
- electroluminescence device
- lithium
- negative electrode
- organic electroluminescence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 229910000480 nickel oxide Inorganic materials 0.000 claims abstract description 44
- 150000001339 alkali metal compounds Chemical class 0.000 claims abstract description 24
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 claims abstract description 19
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims abstract description 19
- AYTVLULEEPNWAX-UHFFFAOYSA-N cesium;azide Chemical compound [Cs+].[N-]=[N+]=[N-] AYTVLULEEPNWAX-UHFFFAOYSA-N 0.000 claims abstract description 15
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims abstract description 14
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical class C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims abstract description 13
- -1 (8-hydroxyquinoline)-aluminum Chemical group 0.000 claims abstract description 12
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000012448 Lithium borohydride Substances 0.000 claims abstract description 10
- 229910052792 caesium Inorganic materials 0.000 claims abstract description 10
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 10
- 229910000026 rubidium carbonate Inorganic materials 0.000 claims abstract description 10
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 claims abstract description 9
- WPFGFHJALYCVMO-UHFFFAOYSA-L rubidium carbonate Chemical compound [Rb+].[Rb+].[O-]C([O-])=O WPFGFHJALYCVMO-UHFFFAOYSA-L 0.000 claims abstract description 9
- 229910052808 lithium carbonate Inorganic materials 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 295
- 238000005401 electroluminescence Methods 0.000 claims description 51
- 230000005540 biological transmission Effects 0.000 claims description 43
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 28
- 238000004020 luminiscence type Methods 0.000 claims description 25
- 238000001704 evaporation Methods 0.000 claims description 24
- 230000008020 evaporation Effects 0.000 claims description 24
- 229910052741 iridium Inorganic materials 0.000 claims description 23
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 23
- 239000000126 substance Substances 0.000 claims description 21
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 20
- 238000002207 thermal evaporation Methods 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 239000004411 aluminium Substances 0.000 claims description 15
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 claims description 12
- XSCHRSMBECNVNS-UHFFFAOYSA-N quinoxaline Chemical compound N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 claims description 12
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 238000005566 electron beam evaporation Methods 0.000 claims description 10
- 239000002346 layers by function Substances 0.000 claims description 9
- GUWHRJQTTVADPB-UHFFFAOYSA-N lithium azide Chemical compound [Li+].[N-]=[N+]=[N-] GUWHRJQTTVADPB-UHFFFAOYSA-N 0.000 claims description 9
- 238000007738 vacuum evaporation Methods 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 8
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical class C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 claims description 7
- ZEOMRHKTIYBETG-UHFFFAOYSA-N 2-phenyl-1,3,4-oxadiazole Chemical compound O1C=NN=C1C1=CC=CC=C1 ZEOMRHKTIYBETG-UHFFFAOYSA-N 0.000 claims description 6
- 239000004305 biphenyl Substances 0.000 claims description 6
- 229920002554 vinyl polymer Polymers 0.000 claims description 6
- BCIKXVCYWZORHA-UHFFFAOYSA-N 5,6,11,12-tetraphenylchrysene Chemical compound C1(=CC=CC=C1)C1=C(C2=CC=CC=C2C=2C(=C(C=3C=CC=CC=3C=21)C1=CC=CC=C1)C1=CC=CC=C1)C1=CC=CC=C1 BCIKXVCYWZORHA-UHFFFAOYSA-N 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- LPCWDYWZIWDTCV-UHFFFAOYSA-N 1-phenylisoquinoline Chemical compound C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 LPCWDYWZIWDTCV-UHFFFAOYSA-N 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 125000006617 triphenylamine group Chemical group 0.000 claims description 2
- 238000002347 injection Methods 0.000 abstract description 9
- 239000007924 injection Substances 0.000 abstract description 9
- 239000005416 organic matter Substances 0.000 abstract 2
- 239000007983 Tris buffer Substances 0.000 abstract 1
- 239000002585 base Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 48
- 238000001771 vacuum deposition Methods 0.000 description 31
- 229910052757 nitrogen Inorganic materials 0.000 description 23
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 14
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 14
- 238000004140 cleaning Methods 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 7
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 7
- 238000004506 ultrasonic cleaning Methods 0.000 description 7
- 238000005406 washing Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 6
- VEUMBMHMMCOFAG-UHFFFAOYSA-N 2,3-dihydrooxadiazole Chemical compound N1NC=CO1 VEUMBMHMMCOFAG-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 150000005360 2-phenylpyridines Chemical class 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- WPUSEOSICYGUEW-UHFFFAOYSA-N 4-[4-(4-methoxy-n-(4-methoxyphenyl)anilino)phenyl]-n,n-bis(4-methoxyphenyl)aniline Chemical compound C1=CC(OC)=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 WPUSEOSICYGUEW-UHFFFAOYSA-N 0.000 description 2
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 2
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 2
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- CECAIMUJVYQLKA-UHFFFAOYSA-N iridium 1-phenylisoquinoline Chemical compound [Ir].C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 CECAIMUJVYQLKA-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- SNTWKPAKVQFCCF-UHFFFAOYSA-N 2,3-dihydro-1h-triazole Chemical class N1NC=CN1 SNTWKPAKVQFCCF-UHFFFAOYSA-N 0.000 description 1
- MBHNWCYEGXQEIT-UHFFFAOYSA-N Fluphenazine hydrochloride Chemical compound Cl.Cl.C1CN(CCO)CCN1CCCN1C2=CC(C(F)(F)F)=CC=C2SC2=CC=CC=C21 MBHNWCYEGXQEIT-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
- H10K85/6565—Oxadiazole compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to an inversion-type organic light-emitting device and a preparation method thereof. The inversion-type organic light-emitting device includes a substrate, a cathode, an organic light-emitting function layer, and an anode, which are sequentially laminated, and a pn junction layer arranged between the cathode and the organic light-emitting function layer. The pn junction layer includes a p-type layer and an n-type layer, which are sequentially laminated on the cathode. The p-type layer is formed by doping lithium or caesium into nickel oxide. The n-type layer is formed by doping an alkali metal compound into an organic matter. The alkali metal compound is lithium carbonate, cesium azide, lithium borohydride, lithium fluoride or rubidium carbonate. The organic matter is (8-hydroxyquinoline)-aluminum, 4,7-diphenyl-o-phenanthroline, 1,3,5-tris(1-phenyl-1H-benzimidazole-2-base) benzene, 2,9-dimethyl-4,7-diphenyl-1, 10-orthophenanthroline or 1,2,4-triazole derivative. The inversion-type organic light-emitting device solves a problem that current carrier injection is difficult and is comparatively high in light-emitting efficiency.
Description
Technical field
The present invention relates to electroluminescent technology field, particularly relate to a kind of inversion type organic electroluminescence device and preparation method thereof.
Background technology
Organic electroluminescent (Organic Light Emission Diode), hereinafter to be referred as OLED, have that brightness is high, material range of choice is wide, driving voltage is low, entirely solidify the characteristics such as active illuminating, have high definition, wide viewing angle simultaneously, and the advantage such as fast response time, be a kind of Display Technique and light source that has potentiality, meet the development trend that information age mobile communication and information show, and the requirement of green lighting technique, be current lot of domestic and foreign researcher's focal point.
At present, the development of OLED is very rapid, in order to obtain its more application, and simpler manufacture craft, researchers have developed the OLED luminescent device of various structures, for example top emission light-emitting device, inverted type light-emitting device.
But for the inversion OLED luminescent device of lower bright dipping, conventionally need a high transparent electrode as negative electrode, conventional its transmitance of sheet metal only has 60～70% left and right at present, and excessively thin metallic film brings higher challenge to the encapsulation of device.And although its transmitance of transparent conductive oxide film is high, because its work content is higher, unfavorable to the injection of electronics, make the luminous efficiency of device be difficult to improve.
Summary of the invention
Based on this, be necessary the inversion type organic electroluminescence device that provides a kind of luminous efficiency higher.
A kind of preparation method of inversion type organic electroluminescence device further, is provided.
A kind of inversion type organic electroluminescence device, comprise the substrate, negative electrode, organic luminescence function layer and the anode that stack gradually, also comprise the pn knot layer being arranged between described negative electrode and organic luminescence function layer, described pn knot layer comprises the p-type layer and the N-shaped layer that stack gradually on described negative electrode; Wherein, described p-type layer is doped in nickel oxide and is formed by lithium or caesium, described N-shaped layer is doped in organic substance and is formed by alkali metal compound, described alkali metal compound is lithium carbonate, cesium azide, lithium borohydride, lithium fluoride or rubidium carbonate, described organic substance is (oxine)-aluminium, 4,7-diphenyl-o-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene or 1,2,4-triazole derivative.
In an embodiment, the mass percent that described lithium or caesium account for described p-type layer is 1～10% therein.
In an embodiment, the mass percent that described alkali metal compound accounts for described N-shaped layer is 5～30% therein.
In an embodiment, the thickness of described p-type layer is 2～15 nanometers therein.
In an embodiment, the thickness of described N-shaped layer is 5～20 nanometers therein.
In an embodiment, described negative electrode is formed by indium tin oxide, indium-zinc oxide, aluminium zinc oxide or gallium zinc oxide therein.
In an embodiment, described organic luminescence function layer comprises the electron transfer layer, luminescent layer and the hole transmission layer that stack gradually on described N-shaped layer therein.
Therein in an embodiment, described electron transfer layer is by 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole, 4,7-diphenyl-o-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene or 1,2,4-triazole derivative form;
Described luminescent layer is formed by luminescent material, or be doped in electron transport material or hole mobile material and form by luminescent material, described luminescent material is 4-(dintrile methyl)-2-butyl-6-(1, 1, 7, 7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 5, 6, 11, 12-tetraphenyl naphthonaphthalene, two (4, 6-difluorophenyl pyridine-N, C2) pyridine formyl closes iridium, two (4, 6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes iridium, two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) close iridium or three (1-phenyl-isoquinolin) and close iridium or three (2-phenylpyridine) and close iridium,
Described hole transmission layer is by Phthalocyanine Zinc, CuPc, 4,4', 4''-tri-(2-naphthyl phenyl amino) triphenylamine, N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines or 4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine forms.
In an embodiment, the thickness of described electron transfer layer is 10～60 nanometers therein, and the thickness of described luminescent layer is 10～20 nanometers, and the thickness of described hole transmission layer is 20～60 nanometers.
A preparation method for inversion type organic electroluminescence device, comprises the steps:
Substrate is provided, adopts vacuum sputtering to form negative electrode on described substrate;
Adopt electron beam evaporation technique evaporation nickel oxide and Lithium Azide simultaneously, or while evaporation oxidation nickel and cesium azide, on described negative electrode, forming p-type layer, described p-type layer is doped in nickel oxide and is formed by lithium or caesium;
Adopt thermal evaporation techniques evaporation alkali metal compound and organic substance simultaneously, on described p-type layer, form N-shaped layer, described p-type layer and N-shaped layer form the pn knot layer being laminated on described negative electrode; Wherein, described N-shaped layer is doped in described organic substance and is formed by described alkali metal compound, and described alkali metal compound is lithium carbonate, cesium azide, lithium borohydride, lithium fluoride or rubidium carbonate, and described organic substance is (oxine)-aluminium, 4,7-diphenyl-o-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene or 1,2,4-triazole derivative;
Adopt vacuum evaporation to form organic light emitting functional layer on described N-shaped layer;
Adopt thermal evaporation techniques to form anode on described organic luminescence function layer, obtain organic electroluminescence device.
Above-mentioned inversion type organic electroluminescence device arranges pn knot layer between negative electrode and organic luminescence function layer, under the effect of external electrical field, in the interface formation separation of charge of pn knot layer, hole and electronics are moved to negative electrode and organic luminescence function layer respectively, thereby electronics is directly injected in organic luminescence function layer, therefore solve the problem of carrier injection difficulty, improved luminous efficiency.
Brief description of the drawings
Fig. 1 is the structural representation of the inversion type organic electroluminescence device of an execution mode;
Fig. 2 is preparation method's flow chart of the inversion type organic electroluminescence device of an execution mode;
Fig. 3 is the voltage-to-current density characteristic curve of the inversion type organic electroluminescence device of embodiment 1 and comparative example 1.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.A lot of details are set forth in the following description so that fully understand the present invention.But the present invention can implement to be much different from alternate manner described here, and those skilled in the art can do similar improvement without prejudice to intension of the present invention in the situation that, and therefore the present invention is not subject to the restriction of following public concrete enforcement.
Refer to Fig. 1, the inversion type organic electroluminescence device 100 of an execution mode, comprises the substrate 10, negative electrode 20, pn knot layer 30, organic luminescence function layer 40 and the anode 50 that stack gradually.
Substrate 10 is transparency carrier, can adopt clear glass or polyethersulfone resin substrate.Present embodiment adopts clear glass.
Negative electrode 20 is formed by indium tin oxide (ITO), indium-zinc oxide (IZO), aluminium zinc oxide (AZO) or gallium zinc oxide (GZO).The negative electrode 20 that this different materials forms has higher transmitance, is conducive to improve the light efficiency of inversion type organic electroluminescence device 100.
The thickness of negative electrode 20 is 70～200 nanometers.
Pn knot layer 30 comprises the p-type layer 31 and the N-shaped layer 32 that stack gradually on negative electrode 20.
P-type layer 31 is doped in nickel oxide (NiO) and is formed by lithium (Li) or caesium (Cs).Preferably, to account for the mass percent of p-type layer 31 be 1～10% for lithium or caesium.
The thickness of p-type layer 31 is preferably 2～15 nanometers.
N-shaped layer 32 is doped in organic substance and is formed by alkali metal compound.Preferably, to account for the mass percent of N-shaped layer 32 be 5～30% to alkali metal compound.
Alkali metal compound is lithium carbonate (Li
2cO
3), cesium azide (CsN
3), lithium borohydride (LiBH
4), lithium fluoride (LiF) or rubidium carbonate (Rb
2cO
3).
Organic substance is (oxine)-aluminium (Alq
3), 4,7-diphenyl-o-phenanthroline (Bphen), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP) or 1,2,4-triazole derivative (TAZ).
The thickness of N-shaped layer 32 is preferably 5～20 nanometers.
Organic luminescence function layer 40 comprises the electron transfer layer 41, luminescent layer 42 and the hole transmission layer 43 that stack gradually on N-shaped layer 32.
Electron transfer layer 41 is by 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), 4,7-diphenyl-o-phenanthroline (Bphen), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP) or 1,2,4-triazole derivative forms (TAZ).
The thickness of electron transfer layer 41 is preferably 10～60 nanometers.
Luminescent layer 42 is formed by luminescent material.
In other execution mode, luminescent layer 42 is doped in electron transport material or hole mobile material and is formed by luminescent material.Wherein, to account for the mass percent of luminescent layer 42 be 1～15% to luminescent material.
Luminescent material is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 5,6,11,12-tetraphenyl naphthonaphthalene (Rubrene), two (4,6-difluorophenyl pyridine-N, C2) pyridine formyl closes iridium (FIrpic), two (4,6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes iridium (FIr6), two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) and closes iridium (Ir (MDQ)
2(acac)) or three (1-phenyl-isoquinolin) close iridium (Ir (piq) 3) or three (2-phenylpyridines) close iridium ((Ir (ppy) 3)).
Electron transport material is 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), (oxine)-aluminium (Alq
3), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA), 4,7-diphenyl-o-phenanthroline (Bphen), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi) or 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP).
Hole mobile material is 4,4', 4''-tri-(2-naphthyl phenyl amino) triphenylamine (2-TNATA), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA) or N, N, N', N '-tetramethoxy phenyl)-benzidine (MeO-TPD).
The thickness of luminescent layer 42 is preferably 10～20 nanometers.
Hole transmission layer 43 is by Phthalocyanine Zinc (ZnPc), CuPc (CuPc), 4,4', 4''-tri-(2-naphthyl phenyl amino) triphenylamine (2-TNATA), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB) or 4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA) forms.
The thickness of hole transmission layer 43 is preferably 20～60 nanometers.
Anode 50 is formed, or is formed by any two kinds of alloys that form in these several metals by silver (Ag), aluminium (Al), gold (Au), platinum (Pt).
The thickness of anode 50 is preferably 70～200 nanometers.
Above-mentioned inversion type organic electroluminescence device 100 arranges pn knot layer 30 between negative electrode 20 and organic luminescence function layer 40, under the effect of external electrical field, in the interface formation separation of charge of pn knot layer 30, hole and electronics are moved to negative electrode 20 and organic luminescence function layer 40 respectively, thereby electronics is directly injected in organic luminescence function layer 40, therefore solve the problem of carrier injection difficulty, improved luminous efficiency.
Refer to Fig. 2, the preparation method of the inversion type organic electroluminescence device of an execution mode, comprises the steps:
Step S110: substrate is provided, adopts vacuum sputtering to form negative electrode on substrate.
Substrate adopts transparent glass substrate.Transparent glass substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, after cleaning up, in ultrasonic wave, process 20 minutes with isopropyl alcohol, acetone successively, and then dry up with nitrogen.
5 × 10
-4under the vacuum degree of Pa, indium tin oxide (ITO), indium-zinc oxide (IZO), aluminium zinc oxide (AZO) or gallium zinc oxide (GZO) are sputtered on clean, dry glass substrate, on glass substrate, form negative electrode.
The thickness of negative electrode is preferably 70～200 nanometers.
Step S120: adopt electron beam evaporation technique evaporation nickel oxide and Lithium Azide simultaneously, or while evaporation oxidation nickel and cesium azide, on negative electrode, form p-type layer.
Be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, by electron beam evaporation technique, evaporation nickel oxide (NiO) and Lithium Azide (LiN simultaneously
3), on cathode surface, form p-type layer.Or evaporation nickel oxide (NiO) and cesium azide (CsN simultaneously
3), on cathode surface, form p-type layer.P-type layer is doped in nickel oxide and is formed by lithium or caesium.
Lithium Azide (LiN
3) decomposes becomes Li and nitrogen, Li is doped in nickel oxide (NiO).Cesium azide (CsN
3) decomposes becomes Cs and nitrogen, Cs is doped in nickel oxide (NiO).
The thickness of p-type layer is preferably 2～15 nanometers.
Step S130: adopt thermal evaporation techniques evaporation alkali metal compound and organic substance simultaneously, form N-shaped layer on p-type layer, p-type layer and N-shaped layer form the pn knot layer being laminated on negative electrode.
Be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, by thermal evaporation technique evaporation alkali metal compound and organic substance simultaneously, on p-type layer, form N-shaped layer.P-type layer and N-shaped layer form the pn knot layer being laminated on negative electrode.
N-shaped layer is doped in organic substance and is formed by alkali metal compound.Preferably, to account for the mass percent of N-shaped layer be 5～30% to alkali metal compound.
Alkali metal compound is lithium carbonate (Li
2cO
3), cesium azide (CsN
3), lithium borohydride (LiBH
4), lithium fluoride (LiF) or rubidium carbonate (Rb
2cO
3).
Organic substance is (oxine)-aluminium (Alq
3), 4,7-diphenyl-o-phenanthroline (Bphen), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP) or 1,2,4-triazole derivative (TAZ).
The thickness of N-shaped layer is preferably 5～20 nanometers.
Step S140: adopt vacuum evaporation to form organic light emitting functional layer on N-shaped layer.
Vacuum degree is 5 × 10
-4pa.
On N-shaped layer, evaporation forms electron transfer layer, luminescent layer and hole transmission layer successively.
Electron transfer layer is by 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), 4,7-diphenyl-o-phenanthroline (Bphen), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP) or 1,2,4-triazole derivative forms (TAZ).
The thickness of electron transfer layer is preferably 10～60 nanometers.
Luminescent layer is formed by luminescent material.
In other execution mode, luminescent layer is doped in electron transport material or hole mobile material and is formed by luminescent material.Wherein, to account for the mass percent of luminescent layer be 1～15% to luminescent material.
Luminescent material is 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), 5,6,11,12-tetraphenyl naphthonaphthalene (Rubrene), two (4,6-difluorophenyl pyridine-N, C2) pyridine formyl closes iridium (FIrpic), two (4,6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes iridium (FIr6), two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) and closes iridium (Ir (MDQ)
2(acac)) or three (1-phenyl-isoquinolin) close iridium (Ir (piq) 3) or three (2-phenylpyridines) close iridium ((Ir (ppy) 3)).
Electron transport material is 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), (oxine)-aluminium (Alq3), 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA), 4,7-diphenyl-o-phenanthroline (Bphen), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi) or 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP).
Hole mobile material is 4,4', 4''-tri-(2-naphthyl phenyl amino) triphenylamine (2-TNATA), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA) or N, N, N', N '-tetramethoxy phenyl)-benzidine (MeO-TPD).
The thickness of luminescent layer is preferably 10～20 nanometers.
Hole transmission layer is by Phthalocyanine Zinc (ZnPc), CuPc (CuPc), 4,4', 4''-tri-(2-naphthyl phenyl amino) triphenylamine (2-TNATA), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB) or 4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA) forms.
The thickness of hole transmission layer is preferably 20～60 nanometers.
Step S150: adopt thermal evaporation techniques to form anode on organic luminescence function layer, obtain organic electroluminescence device.
Be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt thermal evaporation techniques on hole transmission layer, to form anode.
Anode is formed, or is formed by any two kinds of alloys that form in these several metals by silver (Ag), aluminium (Al), gold (Au), platinum (Pt).
The thickness of anode is preferably 70～200 nanometers.
The preparation method of above-mentioned inversion type organic electroluminescence device adopts electron beam evaporation technique on negative electrode, to form p-type layer, adopt thermal evaporation on p-type layer, to form N-shaped layer, obtain the pn knot layer between negative electrode and organic luminescence function layer, prepare the inversion type organic electroluminescence device that luminous efficiency is high.This preparation method's technique is simple, is easy to extensive preparation.
Preparation pn knot layer and organic luminescence function layer are all in vacuum degree 5 × 10
-4under Pa, carry out evaporation.In higher vacuum degree 5 × 10
-4under Pa, can avoid the film that deposition forms to produce defect, be conducive to improve quality of forming film, thereby obtain the inversion type organic electroluminescence device of stable performance.
It is below specific embodiment.
Embodiment 1
Structure is: Glass/ITO/Li:NiO/Li
2cO
3: Alq
3/ PBD/DCJTB:Alq
3the preparation of the inversion type organic electroluminescence device of/CuPc/Ag
(1) provide transparent glass substrate, be expressed as Glass.Glass substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, after cleaning up, in ultrasonic wave, process 20 minutes with isopropyl alcohol, acetone successively, and then dry up with nitrogen;
(2) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, tin indium oxide (ITO) is sputtered onto on cleaning, dry glass substrate, on glass substrate, forms negative electrode, be expressed as ITO.The thickness of negative electrode is 100 nanometers;
(3) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt electron beam evaporation technique evaporation oxidation nickel (NiO) and Lithium Azide (LiN simultaneously
3), obtain the NiO film that metal Li adulterates, form the p-type layer being laminated on negative electrode.P-type layer is expressed as Li:NiO, and wherein to account for the mass percent of p-type layer be 5% to Li, and the thickness of p-type layer is 5nm;
(4) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt thermal evaporation techniques evaporation alkali metal compound lithium carbonate (Li simultaneously
2cO
3) and organic substance (oxine)-aluminium (Alq
3), form the N-shaped layer being laminated on p-type layer.N-shaped layer is by lithium carbonate (Li
2cO
3) be doped in (oxine)-aluminium (Alq
3) middle formation, be expressed as Li
2cO
3: Alq
3, wherein lithium carbonate (Li
2cO
3) mass percent that accounts for N-shaped layer is 10%, thickness is 10nm, p-type layer and N-shaped layer form the pn knot layer being laminated on negative electrode;
(5) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt vacuum evaporation on N-shaped layer, to form successively electron transfer layer, luminescent layer and hole transmission layer.Electron transfer layer is by 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1, and 3,4-oxadiazole (PBD) forms, and the thickness of electron transfer layer is 10 nanometers; Luminescent layer is doped in (oxine)-aluminium (Alq by 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB)
3) middle formation, be expressed as DCJTB:Alq
3, wherein to account for the mass percent of luminescent layer be 1% to DCJTB, the thickness of luminescent layer is 20 nanometers; Hole transmission layer is formed by CuPc (CuPc), and the thickness of hole transmission layer is 30 nanometers, and the electron transfer layer, luminescent layer and the hole transmission layer that stack gradually form organic light emitting functional layer, are expressed as PBD/DCJTB:Alq
3/ CuPc;
(6) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt thermal evaporation on hole transmission layer, to form anode.Anode is formed by silver (Ag), and the thickness of anode is 100 nanometers.
The substrate, negative electrode, pn knot layer, organic luminescence function layer and the anode that stack gradually, obtaining structure is Glass/ITO/Li:NiO/Li
2cO
3: Alq
3/ PBD/DCJTB:Alq
3the inversion type organic electroluminescence device of/CuPc/Ag.
Embodiment 2
Structure is Glass/AZO/Cs:NiO/CsN
3: the preparation of the inversion type organic electroluminescence device of Bphen/BCP/Rubrene/ZnPc/Au
(1) provide transparent glass substrate, be expressed as Glass.Glass substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, after cleaning up, in ultrasonic wave, process 20 minutes with isopropyl alcohol, acetone successively, and then dry up with nitrogen;
(2) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, aluminium zinc oxide (AZO) is sputtered onto on cleaning, dry glass substrate, on glass substrate, forms negative electrode, be expressed as AZO.The thickness of negative electrode is 70 nanometers;
(3) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt electron beam evaporation technique evaporation oxidation nickel (NiO) and cesium azide (CsN simultaneously
3), obtain the NiO film that metal Cs adulterates, form the p-type layer being laminated on negative electrode.P-type layer is expressed as Cs:NiO, and wherein to account for the mass percent of p-type layer be 1% to Cs, and the thickness of p-type layer is 2nm;
(4) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt thermal evaporation techniques evaporation alkali metal compound cesium azide (CsN simultaneously
3) and organic substance 4,7-diphenyl-o-phenanthroline (Bphen), forms the N-shaped layer being laminated on p-type layer.N-shaped layer is by cesium azide (CsN
3) be doped in formation in 4,7-diphenyl-o-phenanthroline (Bphen), be expressed as CsN
3: Bphen, wherein cesium azide (CsN
3) mass percent that accounts for N-shaped layer is 5%, thickness is 5nm, p-type layer and N-shaped layer form the pn knot layer being laminated on negative electrode;
(5) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt vacuum evaporation on N-shaped layer, to form successively electron transfer layer, luminescent layer and hole transmission layer.Electron transfer layer is by 2,9-dimethyl-4,7-biphenyl-1, and 10-phenanthrolene (BCP) forms, and the thickness of electron transfer layer is 60 nanometers; Luminescent layer is formed by 5,6,11,12-tetraphenyl naphthonaphthalene (Rubrene), and the thickness of luminescent layer is 10 nanometers; Hole transmission layer is formed by Phthalocyanine Zinc (ZuPc), and the thickness of hole transmission layer is 60 nanometers, and the electron transfer layer, luminescent layer and the hole transmission layer that stack gradually form organic light emitting functional layer, are expressed as BCP/Rubrene/ZnPc;
(6) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt thermal evaporation on hole transmission layer, to form anode.Anode is formed by gold (Au), and the thickness of anode is 100 nanometers.
The substrate, negative electrode, pn knot layer, organic luminescence function layer and the anode that stack gradually, obtaining structure is Glass/AZO/Cs:NiO/CsN
3: the inversion type organic electroluminescence device of Bphen/BCP/Rubrene/ZnPc/Au.
Embodiment 3
Structure is Glass/GZO/Li:NiO/LiBH
4: TPBi/TAZ/Ir (ppy)
3: the preparation of the inversion type organic electroluminescence device of TPBi/2-TNATA/Al
(1) provide transparent glass substrate, be expressed as Glass.Glass substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, after cleaning up, in ultrasonic wave, process 20 minutes with isopropyl alcohol, acetone successively, and then dry up with nitrogen;
(2) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, gallium zinc oxide (GZO) is sputtered onto on cleaning, dry glass substrate, on glass substrate, forms negative electrode, be expressed as GZO.The thickness of negative electrode is 200 nanometers;
(3) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt electron beam evaporation technique evaporation oxidation nickel (NiO) and Lithium Azide (LiN simultaneously
3), obtain the NiO film that metal Li adulterates, form the p-type layer being laminated on negative electrode.P-type layer is expressed as Li:NiO, and wherein to account for the mass percent of p-type layer be 10% to Li, and the thickness of p-type layer is 15nm;
(4) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt thermal evaporation techniques evaporation alkali metal compound lithium borohydride (LiBH simultaneously
4) and organic substance 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), forms the N-shaped layer being laminated on p-type layer.N-shaped layer is by lithium borohydride (LiBH
4) be doped in formation in 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), be expressed as LiBH
4: TPBi, wherein lithium borohydride (LiBH
4) mass percent that accounts for N-shaped layer is 30%, thickness is 20nm, p-type layer and N-shaped layer form the pn knot layer being laminated on negative electrode;
(5) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt vacuum evaporation on N-shaped layer, to form successively electron transfer layer, luminescent layer and hole transmission layer.Electron transfer layer forms (TAZ) by 1,2,4-triazole derivative and forms, and the thickness of electron transfer layer is 10 nanometers; Luminescent layer closes iridium ((Ir (ppy) by three (2-phenylpyridines)
3)) be doped in formation in 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), be expressed as Ir (ppy)
3: TPBi, wherein Ir (ppy)
3the mass percent that accounts for luminescent layer is 15%, and the thickness of luminescent layer is 10 nanometers; Hole transmission layer is by 4,4', 4''-tri-(2-naphthyl phenyl amino) triphenylamine (2-TNATA) forms, the thickness of hole transmission layer is 20 nanometers, the electron transfer layer, luminescent layer and the hole transmission layer that stack gradually form organic light emitting functional layer, are expressed as TAZ/Ir (ppy)
3: TPBi/2-TNATA;
(6) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt thermal evaporation on hole transmission layer, to form anode.Anode is formed by aluminium (Al), and the thickness of anode is 200 nanometers.
The substrate, negative electrode, pn knot layer, organic luminescence function layer and the anode that stack gradually, obtaining structure is Glass/GZO/Li:NiO/LiBH
4: TPBi/TAZ/Ir (ppy)
3: the inversion type organic electroluminescence device of TPBi/2-TNATA/Al.
Embodiment 4
Structure is Glass/IZO/Li:NiO/RbCO
3: BCP/BCP/Ir (MDQ)
2(acac): the preparation of the inversion type organic electroluminescence device of NPB/m-MTDATA/Pt
(1) provide transparent glass substrate, be expressed as Glass.Glass substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, after cleaning up, in ultrasonic wave, process 20 minutes with isopropyl alcohol, acetone successively, and then dry up with nitrogen;
(2) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, indium-zinc oxide (IZO) is sputtered onto on cleaning, dry glass substrate, on glass substrate, forms negative electrode, be expressed as IZO.The thickness of negative electrode is 200 nanometers;
(3) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt electron beam evaporation technique evaporation oxidation nickel (NiO) and Lithium Azide (LiN simultaneously
3), obtain the NiO film that metal Li adulterates, form the p-type layer being laminated on negative electrode.P-type layer is expressed as Li:NiO, and wherein to account for the mass percent of p-type layer be 5% to Li, and the thickness of p-type layer is 10nm;
(4) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt thermal evaporation techniques evaporation alkali metal compound rubidium carbonate (Rb simultaneously
2cO
3) and organic substance 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP), forms the N-shaped layer being laminated on p-type layer.N-shaped layer is by rubidium carbonate (Rb
2cO
3) being doped in 2,9-dimethyl-4,7-biphenyl-1, forms in 10-phenanthrolene (BCP), is expressed as RbCO
3: BCP, wherein rubidium carbonate (Rb
2cO
3) mass percent that accounts for N-shaped layer is 15%, thickness is 20nm, p-type layer and N-shaped layer form the pn knot layer being laminated on negative electrode;
(5) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt vacuum evaporation on N-shaped layer, to form successively electron transfer layer, luminescent layer and hole transmission layer.Electron transfer layer is by 2,9-dimethyl-4,7-biphenyl-1, and 10-phenanthrolene (BCP) forms, and the thickness of electron transfer layer is 10 nanometers; Luminescent layer closes iridium (Ir (MDQ) by two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanediones)
2(acac)) be doped in N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4, form in 4'-diamines (NPB), are expressed as Ir (MDQ)
2(acac): NPB, wherein Ir (MDQ)
2(acac) mass percent that accounts for luminescent layer is 8%, and the thickness of luminescent layer is 10 nanometers; Hole transmission layer is by 4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA) forms, the thickness of hole transmission layer is 20 nanometers, the electron transfer layer, luminescent layer and the hole transmission layer that stack gradually form organic light emitting functional layer, are expressed as BCP/Ir (MDQ)
2(acac): NPB/m-MTDATA;
(6) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt thermal evaporation on hole transmission layer, to form anode.Anode is formed by platinum (Pt), and the thickness of anode is 70 nanometers.
The substrate, negative electrode, pn knot layer, organic luminescence function layer and the anode that stack gradually, obtaining structure is Glass/IZO/Li:NiO/RbCO
3: BCP/BCP/Ir (MDQ)
2(acac): the inversion type organic electroluminescence device of NPB/m-MTDATA/Pt.
Embodiment 5
Structure is Glass/AZO/Li:NiO/LiF:TAZ/BPhen/Ir (MDQ)
2(acac): the preparation of the inversion type organic electroluminescence device of NPB/NPB/Al-Ag
(1) provide transparent glass substrate, be expressed as Glass.Glass substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, after cleaning up, in ultrasonic wave, process 20 minutes with isopropyl alcohol, acetone successively, and then dry up with nitrogen;
(2) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, sputtered aluminum zinc oxide (AZO), to clean, dry glass substrate, forms negative electrode on glass substrate, is expressed as AZO.The thickness of negative electrode is 100 nanometers;
(3) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt electron beam evaporation technique evaporation oxidation nickel (NiO) and Lithium Azide (LiN simultaneously
3), obtain the NiO film that metal Li adulterates, form the p-type layer being laminated on negative electrode.P-type layer is expressed as Li:NiO, and wherein to account for the mass percent of p-type layer be 5% to Li, and the thickness of p-type layer is 5nm;
(4) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt thermal evaporation techniques evaporation alkali metal compound lithium fluoride (LiF) and organic substance 1,2 simultaneously, 4-triazole derivative (TAZ), forms the N-shaped layer being laminated on p-type layer.N-shaped layer is doped in 1,2,4-triazole derivative (TAZ) and is formed by lithium fluoride (LiF), is expressed as RbCO
3: BCP, wherein to account for the mass percent of N-shaped layer be 10% to lithium fluoride (LiF), and thickness is 10nm, and p-type layer and N-shaped layer form the pn knot layer being laminated on negative electrode;
(5) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt vacuum evaporation on N-shaped layer, to form successively electron transfer layer, luminescent layer and hole transmission layer.Electron transfer layer is formed by 4,7-diphenyl-o-phenanthroline (Bphen), and the thickness of electron transfer layer is 20 nanometers; Luminescent layer closes iridium (Ir (MDQ) by two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanediones)
2(acac)) be doped in N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4, form in 4'-diamines (NPB), are expressed as Ir (MDQ)
2(acac): NPB, wherein Ir (MDQ)
2(acac) mass percent that accounts for luminescent layer is 8%, and the thickness of luminescent layer is 10 nanometers; Hole transmission layer is by N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB) forms, the thickness of hole transmission layer is 30 nanometers, and the electron transfer layer, luminescent layer and the hole transmission layer that stack gradually form organic light emitting functional layer, is expressed as BPhen/Ir (MDQ)
2(acac): NPB/NPB;
(6) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt thermal evaporation on hole transmission layer, to form anode.Anode is formed by aluminium-Yin (Al-Ag), and the thickness of anode is 100 nanometers.
The substrate, negative electrode, pn knot layer, organic luminescence function layer and the anode that stack gradually, obtaining structure is Glass/AZO/Li:NiO/LiF:TAZ/BPhen/Ir (MDQ)
2(acac): the inversion type organic electroluminescence device of NPB/NPB/Al-Ag.
Comparative example 1
Structure is: Glass/ITO/PBD/DCJTB:Alq
3the preparation of the inversion type organic electroluminescence device of/CuPc/Ag
(1) provide transparent glass substrate, be expressed as Glass.Glass substrate is placed in the deionized water that contains washing agent and carries out ultrasonic cleaning, after cleaning up, in ultrasonic wave, process 20 minutes with isopropyl alcohol, acetone successively, and then dry up with nitrogen;
(2) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, sputter tin indium oxide (ITO), to clean, dry glass substrate, forms negative electrode on glass substrate, is expressed as ITO.The thickness of negative electrode is 100 nanometers;
(3) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt vacuum evaporation on negative electrode, to form successively electron transfer layer, luminescent layer and hole transmission layer.Electron transfer layer is by 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1, and 3,4-oxadiazole (PBD) forms, and the thickness of electron transfer layer is 10 nanometers; Luminescent layer is by 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB) is doped in (oxine)-aluminium (Alq3) and forms, and is expressed as DCJTB:Alq
3, wherein to account for the mass percent of luminescent layer be 1% to DCJTB, the thickness of luminescent layer is 20 nanometers; Hole transmission layer is formed by CuPc (CuPc), and the thickness of hole transmission layer is 30 nanometers, and the electron transfer layer, luminescent layer and the hole transmission layer that stack gradually form organic light emitting functional layer, are expressed as PBD/DCJTB:Alq
3/ CuPc;
(4) be 5 × 10 in vacuum degree
-4in the vacuum coating system of Pa, adopt thermal evaporation on hole transmission layer, to form anode.Anode is formed by silver (Ag), and the thickness of anode is 100 nanometers.
The substrate, negative electrode, pn knot layer, organic luminescence function layer and the anode that stack gradually, obtaining structure is Glass/ITO/PBD/DCJTB:Alq
3the inversion type organic electroluminescence device of/CuPc/Ag.
Table 1 is the luminescent properties data of the inversion type organic electroluminescence device of embodiment 1～5 and comparative example 1, as can be seen from Table 1, the inversion type organic electroluminescence device of embodiment 1～5 is compared with the inversion type organic electroluminescence device of comparative example 1, because the injection barrier of electronics reduces, therefore the injection efficiency of electronics be can improve, thereby lower starting resistor and higher luminous efficiency obtained.
The luminescent properties data of the inversion type organic electroluminescence device of table 1 embodiment 1～5 and comparative example 1
| Embodiment and comparative example | Starting resistor (V) | Luminous efficiency (lm/W) |
| Embodiment 1 | 2.5 | 12.3 |
| Embodiment 2 | 2.5 | 11.2 |
| Embodiment 3 | 2.7 | 18.7 |
| Embodiment 4 | 2.5 | 13.2 |
| Embodiment 5 | 2.5 | 11.2 |
| Comparative example 1 | 3.2 | 8.1 |
Fig. 3 is the voltage-to-current density characteristic curve of the inversion type organic electroluminescence device of embodiment 1 and the inversion type organic electroluminescence device of comparative example 1, under identical driving voltage, because the inversion type organic electroluminescence device electronic injection of embodiment 1 is more prone to, and the inversion type organic electroluminescence device electronic injection difficulty of comparative example 1, therefore under identical driving voltage, the inversion type organic electroluminescence device of embodiment 1 has higher Injection Current.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. an inversion type organic electroluminescence device, comprise the substrate, negative electrode, organic luminescence function layer and the anode that stack gradually, it is characterized in that, also comprise the pn knot layer being arranged between described negative electrode and organic luminescence function layer, described pn knot layer comprises the p-type layer and the N-shaped layer that stack gradually on described negative electrode; Wherein, described p-type layer is doped in nickel oxide and is formed by lithium or caesium, described N-shaped layer is doped in organic substance and is formed by alkali metal compound, described alkali metal compound is lithium carbonate, cesium azide, lithium borohydride, lithium fluoride or rubidium carbonate, described organic substance is (oxine)-aluminium, 4,7-diphenyl-o-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene or 1,2,4-triazole derivative.
2. inversion type organic electroluminescence device according to claim 1, is characterized in that, the mass percent that described lithium or caesium account for described p-type layer is 1～10%.
3. inversion type organic electroluminescence device according to claim 1, is characterized in that, the mass percent that described alkali metal compound accounts for described N-shaped layer is 5～30%.
4. inversion type organic electroluminescence device according to claim 1, is characterized in that, the thickness of described p-type layer is 2～15 nanometers.
5. inversion type organic electroluminescence device according to claim 1, is characterized in that, the thickness of described N-shaped layer is 5～20 nanometers.
6. inversion type organic electroluminescence device according to claim 1, is characterized in that, described negative electrode is formed by indium tin oxide, indium-zinc oxide, aluminium zinc oxide or gallium zinc oxide.
7. inversion type organic electroluminescence device according to claim 1, is characterized in that, described organic luminescence function layer comprises the electron transfer layer, luminescent layer and the hole transmission layer that stack gradually on described N-shaped layer.
8. inversion type organic electroluminescence device according to claim 7, is characterized in that, described electron transfer layer is by 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole, 4,7-diphenyl-o-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene or 1,2,4-triazole derivative forms;
Described luminescent layer is formed by luminescent material, or be doped in electron transport material or hole mobile material and form by luminescent material, described luminescent material is 4-(dintrile methyl)-2-butyl-6-(1, 1, 7, 7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans, 5, 6, 11, 12-tetraphenyl naphthonaphthalene, two (4, 6-difluorophenyl pyridine-N, C2) pyridine formyl closes iridium, two (4, 6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes iridium, two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) close iridium or three (1-phenyl-isoquinolin) and close iridium or three (2-phenylpyridine) and close iridium,
Described hole transmission layer is by Phthalocyanine Zinc, CuPc, 4,4', 4''-tri-(2-naphthyl phenyl amino) triphenylamine, N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines or 4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine forms.
9. inversion type organic electroluminescence device according to claim 7, is characterized in that, the thickness of described electron transfer layer is 10～60 nanometers, and the thickness of described luminescent layer is 10～20 nanometers, and the thickness of described hole transmission layer is 20～60 nanometers.
10. a preparation method for inversion type organic electroluminescence device, is characterized in that, comprises the steps:
Substrate is provided, adopts vacuum sputtering to form negative electrode on described substrate;
Adopt electron beam evaporation technique evaporation nickel oxide and Lithium Azide simultaneously, or while evaporation oxidation nickel and cesium azide, on described negative electrode, forming p-type layer, described p-type layer is doped in nickel oxide and is formed by lithium or caesium;
Adopt thermal evaporation techniques evaporation alkali metal compound and organic substance simultaneously, on described p-type layer, form N-shaped layer, described p-type layer and N-shaped layer form the pn knot layer being laminated on described negative electrode; Wherein, described N-shaped layer is doped in described organic substance and is formed by described alkali metal compound, and described alkali metal compound is lithium carbonate, cesium azide, lithium borohydride, lithium fluoride or rubidium carbonate, and described organic substance is (oxine)-aluminium, 4,7-diphenyl-o-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene or 1,2,4-triazole derivative;
Adopt vacuum evaporation to form organic light emitting functional layer on described N-shaped layer;
Adopt thermal evaporation techniques to form anode on described organic luminescence function layer, obtain organic electroluminescence device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310076703.8A CN104051653A (en) | 2013-03-11 | 2013-03-11 | Inversion-type organic light-emitting device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310076703.8A CN104051653A (en) | 2013-03-11 | 2013-03-11 | Inversion-type organic light-emitting device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104051653A true CN104051653A (en) | 2014-09-17 |
Family
ID=51504252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310076703.8A Pending CN104051653A (en) | 2013-03-11 | 2013-03-11 | Inversion-type organic light-emitting device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104051653A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393180A (en) * | 2014-10-17 | 2015-03-04 | 京东方科技集团股份有限公司 | Organic light-emitting diode and preparation method thereof, display substrate, and display apparatus |
| US10177332B2 (en) | 2017-01-16 | 2019-01-08 | Shanghai Tianma AM-OLED Co., Ltd. | Organic light-emitting display panel and device |
| CN113097399A (en) * | 2021-03-31 | 2021-07-09 | 合肥京东方卓印科技有限公司 | Organic electroluminescent device, display substrate and display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1902984A (en) * | 2003-12-26 | 2007-01-24 | 株式会社半导体能源研究所 | Light-emitting element |
| KR20090105316A (en) * | 2008-04-02 | 2009-10-07 | 단국대학교 산학협력단 | Organic electroluminescent element |
| CN102201541A (en) * | 2010-03-23 | 2011-09-28 | 株式会社半导体能源研究所 | Luminous element, light producing device, electronic device and lighting device |
| CN102916135A (en) * | 2011-08-05 | 2013-02-06 | 海洋王照明科技股份有限公司 | Inverted organic light-emitting device and preparation method thereof |
-
2013
- 2013-03-11 CN CN201310076703.8A patent/CN104051653A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1902984A (en) * | 2003-12-26 | 2007-01-24 | 株式会社半导体能源研究所 | Light-emitting element |
| KR20090105316A (en) * | 2008-04-02 | 2009-10-07 | 단국대학교 산학협력단 | Organic electroluminescent element |
| CN102201541A (en) * | 2010-03-23 | 2011-09-28 | 株式会社半导体能源研究所 | Luminous element, light producing device, electronic device and lighting device |
| CN102916135A (en) * | 2011-08-05 | 2013-02-06 | 海洋王照明科技股份有限公司 | Inverted organic light-emitting device and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393180A (en) * | 2014-10-17 | 2015-03-04 | 京东方科技集团股份有限公司 | Organic light-emitting diode and preparation method thereof, display substrate, and display apparatus |
| US10177332B2 (en) | 2017-01-16 | 2019-01-08 | Shanghai Tianma AM-OLED Co., Ltd. | Organic light-emitting display panel and device |
| CN113097399A (en) * | 2021-03-31 | 2021-07-09 | 合肥京东方卓印科技有限公司 | Organic electroluminescent device, display substrate and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103594659A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103137881B (en) | Organnic electroluminescent device and preparation method thereof | |
| CN103730589A (en) | Top emission organic light-emitting device and manufacturing method thereof | |
| CN104934544A (en) | Organic electroluminescent light emitting device and preparation method thereof | |
| CN103730590A (en) | Organic electroluminescence device and manufacturing method of organic electroluminescence device | |
| CN103594653A (en) | Top-emitting organic electroluminescent device and preparation method thereof | |
| CN104051655A (en) | Inverted organic light emission diode device and manufacturing method thereof | |
| CN103137876B (en) | Organnic electroluminescent device and preparation method thereof | |
| CN104051653A (en) | Inversion-type organic light-emitting device and preparation method thereof | |
| CN103730579A (en) | Organic electroluminescence device and manufacturing method of organic electroluminescence device | |
| CN104218162A (en) | Organic light emission diode device and preparation method thereof | |
| CN103594635A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104218156A (en) | Organic light emission diode device and preparation method thereof | |
| CN104183718A (en) | Organic light emission diode and preparation method thereof | |
| CN104576954A (en) | Organic electroluminescent component and manufacturing method thereof | |
| CN103594652A (en) | Double-face luminescence organic electroluminescent device and preparation method thereof | |
| CN103682108A (en) | Organic light-emitting device and preparation method thereof | |
| CN104183761A (en) | Inverted organic light emission diode and preparation method thereof | |
| CN103594660A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104183713A (en) | Top-emission organic light emission diode and preparation method thereof | |
| CN103928618A (en) | Organic electroluminescence apparatus and preparation method thereof | |
| CN103137887A (en) | Electroluminescence component and preparation method of electroluminescence component | |
| CN103928631A (en) | Organic electroluminescence apparatus and preparation method thereof | |
| CN104051631A (en) | Organic light-emitting device and preparation method thereof | |
| CN103855311A (en) | Organic electroluminescence device and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140917 |