CN103972359A - Light emitting diode and on-chip packaging structure thereof - Google Patents

Abstract

A light-emitting diode, including: a substrate; a semiconductor epitaxial layer, which includes a first semiconductor epitaxial layer, an active intermediate layer, and a second semiconductor epitaxial layer; a reflective layer; a metal layer; and a carbide layer; wherein, the active intermediate layer and The distance between the carbide layers may be 1 to 10 microns. In addition, the present invention also relates to a chip-on-board packaging structure, which includes: a circuit carrier board; a semiconductor epitaxial layer, which includes a first semiconductor epitaxial layer, an active intermediate layer, and a second semiconductor epitaxial layer; a reflective layer; and a metal layer ; And a carbide layer; wherein, the distance between the active intermediate layer and the carbide layer may be 1 to 10 microns. Accordingly, the light-emitting diode and its chip-on-board packaging structure of the present invention can quickly remove high-temperature hot spots and increase the output light rate.

Description

Light-emitting diode and its package structure on chip board

technical field

The present invention relates to a light-emitting diode and its chip-on-chip package structure, in particular to a light-emitting diode that can quickly remove hot spots and increase output light rate and a chip-on-chip package structure using the same.

Background technique

In 1962 AD, Nick Holonyak Jr. of General Electric Company developed the first practical visible light-emitting diode (Light Emitting Diode, LED). Diode development should also emerge. Under the premise of the pursuit of sustainable development by human beings today, the advantages of low power consumption and long-lasting luminescence of light-emitting diodes have gradually replaced the indicator lights or lights used for lighting or various electrical equipment in daily life. light source etc. What's more, LEDs are developing towards multi-color and high brightness, and have been applied in large outdoor display billboards or traffic signals.

Taking the known blue light-emitting diode as an example, its indium-doped gallium nitride is a known multiple quantum well (multiple quantum wells, MQW), wherein, the indium atom with 49 electrons is much larger than the gallium atom and the Nitrogen atoms make the indium atoms easy to separate from the crystal lattice, which causes defects in the MQW and makes the blue light emitting diode unable to function. More specifically, the presence of indium atoms in the GaN lattice causes problems of inverse piezoelectricity, which drives the indium atoms away from their equilibrium positions, and internal stress, which causes the indium atoms to generate bad row. The aforementioned irreversible degradation process will rapidly reduce the luminous efficiency of the light emitting diode.

In the known LED, when electrons and holes recombine, about 1/3 of the energy is radiated in the form of photons, and about 2/3 of the energy is converted into heat and dissipated in the form of lattice vibration. Accordingly, if the heat energy in the lattice of the LED cannot be removed quickly, it will lead to the degradation problem of the LED as mentioned above, which will lead to a rapid decrease in the luminous efficiency of the LED. Accordingly, the applicant filed the Taiwan Patent Application No. No. 100146548, No. 100146551 and No. 101120872 have disclosed that the stacked structure or multi-layer structure composed of diamond-like carbon and conductive materials can effectively improve the heat dissipation efficiency of LEDs and alleviate or eliminate the adverse effects of thermal expansion of LEDs. Although related previous documents reveal that diamond-like carbon can quickly remove heat from light-emitting diodes to achieve the purpose of overall heat dissipation due to its superhard material characteristics. However, in fact, as shown in Figure 1, the hot spots with a size smaller than 1 nanometer generated in the MQW are the real cause of the degradation of the LED directly. After detailed research, the applicant proposed that by limiting the distance between the MQW and the diamond-like carbon layer, the hot spot can be quickly removed from the light-emitting diode through phonon transfer, so as to optimize the heat dissipation efficiency of the light-emitting diode, and then maintain the light-emitting diode. luminous efficiency.

Contents of the invention

The object of the present invention is to provide a light-emitting diode and its on-chip packaging structure, so as to improve the defects in the known technology.

In order to achieve the above object, the light emitting diode provided by the present invention includes:

a substrate;

A semiconductor epitaxial layer, which is located on the surface of the substrate, the semiconductor epitaxial layer includes a first semiconductor epitaxial layer, an active intermediate layer, and a second semiconductor epitaxial layer;

a reflective layer sandwiched between the semiconductor epitaxial layer and the substrate;

a metal layer sandwiched between the reflective layer and the substrate; and

a carbide layer sandwiched between the metal layer and the substrate;

Wherein, the distance between the active intermediate layer and the carbide layer is 1 to 10 microns.

Said light emitting diode, wherein, the distance between the active intermediate layer and the carbide layer is 2 microns.

Said LED, wherein the metal layer is titanium, zirconium, molybdenum or tungsten.

Said light emitting diode, wherein the carbide layer is diamond-like carbon, graphene or a combination thereof.

The light-emitting diode, wherein the diamond-like carbon has a conductive tetrahedral structure, and the carbon atom content of the diamond-like carbon is higher than 95%, and more than 25% of the carbon atoms of the diamond-like carbon have a twisted tetrahedral bond knot structure.

Said light emitting diode, wherein, the metal layer and the carbide layer are multi-layer structures stacked on each other.

The light emitting diode, wherein the first semiconductor epitaxial layer is sandwiched between the reflective layer and the active intermediate layer, and the active intermediate layer is sandwiched between the first semiconductor epitaxial layer and the second semiconductor epitaxial layer .

In the above light emitting diode, the semiconductor epitaxial layer contains a dopant, and the dopant is indium.

In the light-emitting diode, the substrate includes an insulating layer and a circuit substrate, and the material of the insulating layer is at least one selected from the group consisting of diamond-like carbon, aluminum oxide, ceramics, and diamond-containing epoxy resin.

Said LED, wherein the circuit substrate is a metal plate, a ceramic plate or a silicon substrate.

The light emitting diode, wherein, includes a second electrode, and the second electrode is arranged on the surface of the second semiconductor epitaxial layer.

Said LED, wherein, the first semiconductor epitaxial layer, the reflective layer, the metal layer and the carbide layer are of P-type electrical type, and the second semiconductor epitaxial layer and the second electrode are of N-type electrical type.

Said light emitting diode, wherein, the carbide layer is used to provide heat radiation of the semiconductor epitaxial layer by means of ultrasonic waves.

The chip-on-board packaging structure (chip on board, COB) provided by the present invention includes:

a circuit carrier including at least one electrical connection pad;

A semiconductor epitaxial layer, which is located on the surface of the circuit carrier, the semiconductor epitaxial layer includes a first semiconductor epitaxial layer, an active intermediate layer and a second semiconductor epitaxial layer;

a reflective layer sandwiched between the semiconductor epitaxial layer and the circuit carrier;

a metal layer sandwiched between the reflective layer and the circuit carrier; and

a carbide layer sandwiched between the metal layer and the circuit carrier;

Wherein, the distance between the active intermediate layer and the carbide layer is 1 to 10 microns.

In the chip-on-board package structure, the distance between the active intermediate layer and the carbide layer is 2 microns.

In the package-on-chip structure, the metal layer is titanium, zirconium, molybdenum or tungsten.

In the chip-on-board package structure, the carbide layer is diamond-like carbon, graphene or a combination thereof.

The above chip-on-chip package structure, wherein the diamond-like carbon has a conductive tetrahedral structure, and the carbon atom content of the diamond-like carbon is higher than 95%, and more than 25% of the carbon atoms of the diamond-like carbon have a twist Tetrahedral bonding structure.

In the package-on-chip structure described above, the metal layer and the carbide layer are multi-layer structures stacked on each other.

The package on chip structure, wherein, the second semiconductor epitaxial layer is sandwiched between the reflective layer and the active intermediate layer, and the active intermediate layer is sandwiched between the first semiconductor epitaxial layer and the second semiconductor epitaxial layer. between layers, and the first semiconductor epitaxial layer partially does not cover the active intermediate layer and the second semiconductor epitaxial layer.

In the chip-on-board packaging structure, the semiconductor epitaxial layer contains a dopant, and the dopant is indium.

In the chip-on-board package structure, wherein the circuit carrier includes an insulating layer and a circuit substrate, the material of the insulating layer is selected from the group consisting of diamond-like carbon, aluminum oxide, ceramics, and diamond-containing epoxy resin at least one of .

In the package-on-chip structure described above, the circuit substrate is a metal plate, a ceramic plate or a silicon substrate.

In the chip-on-board package structure, the second semiconductor epitaxial layer is of P-type electrical type, and the first semiconductor epitaxial layer is of N-type electrical type.

In the package-on-chip structure, the carbide layer is used to provide ultrasonic heat dissipation for the semiconductor epitaxial layer.

The package-on-chip structure includes a substrate disposed on the first semiconductor epitaxial layer.

In the chip-on-board package structure, the substrate is a sapphire substrate.

The chip-on-board package structure includes a soldering layer, and the soldering layer is arranged between the circuit carrier board and the carbide layer.

The light-emitting diode of the present invention and the chip-on-chip packaging structure using it, because of its structural design of ultrasonic heat dissipation, can quickly remove the hot spots generated during the operation of the light-emitting diode to stabilize its lattice structure, thereby To optimize its heat dissipation efficiency to maintain its luminous efficiency.

Description of drawings

FIG. 1 is a schematic diagram of the size of the heat source generated in a light-emitting diode versus the temperature of the heat source.

FIG. 2A to FIG. 2E are schematic structural diagrams of the fabrication process of the light-emitting diode according to Embodiment 1 of the present invention.

FIG. 3A to FIG. 3F are schematic diagrams of the manufacturing process of the package-on-chip structure according to Embodiment 2 of the present invention.

FIG. 4 is a schematic structural diagram of a chip-on-chip package structure according to Embodiment 3 of the present invention.

5A and 5B are diagrams of light field analysis results of Test Example 1 of the present invention.

6A and 6B are diagrams of thermal resistance analysis results in Test Example 3 of the present invention.

7A and 7B are graphs showing the temperature distribution results of Test Example 4 of the present invention.

8A and 8B are graphs showing the temperature distribution results of Test Example 5 of the present invention.

Explanation of main component symbols in the attached drawings:

Light-emitting diodes 1, 3; substrates 10, 30; reflective layers 11, 31; semiconductor epitaxial layers 12, 32; first semiconductor epitaxial layers 121, 321; active intermediate layers 122, 322; second semiconductor epitaxial layers 123, 323; Two electrodes 13; first electrodes 34; metal layers 151, 351; carbide layers 152, 352; multilayer structures 15, 35; first metal welding layer 36; second metal welding layer 37; circuit carrier 7; insulating layer 1070, 70; circuit substrates 1071, 71; solder 72; electrical connection pads 73; on-chip packaging structures 300, 400.

Detailed ways

The light-emitting diode provided by the present invention, by adjusting the structural design of the multi-quantum well layer and the carbide layer, can dissipate heat through ultrasonic waves in the process of generating heat during the operation of the light-emitting diode, and quickly remove hot spots in the light-emitting diode to stabilize light emission The lattice structure of the diode optimizes the heat dissipation efficiency of the LED and maintains its luminous efficiency.

An aspect of the present invention provides a light-emitting diode, including: a substrate; a semiconductor epitaxial layer located on the surface of the substrate, the semiconductor epitaxial layer includes a first semiconductor epitaxial layer, an active intermediate layer, and a second semiconductor epitaxial layer epitaxial layer; a reflective layer sandwiched between the semiconductor epitaxial layer and the substrate; a metal layer sandwiched between the reflective layer and the substrate; and a carbide layer sandwiched between the metal layer and the substrate; wherein, the distance between the active intermediate layer and the carbide layer can be 1 to 10 microns.

In the above light emitting diode of the present invention, the distance between the active intermediate layer and the carbide layer is preferably 2 microns.

In the above light-emitting diode of the present invention, the reflective layer may be composed of silver, or aluminum, or an alloy thereof. However, it should be understood that the material of the reflective layer is not limited thereto. For example, it may also be indium tin oxide (ITO), aluminum zinc oxide (AZO), zinc oxide (ZnO) ), graphene (graphene), nickel (Ni), cobalt (Co), palladium (Pd), platinum (Pt), gold (Au), zinc (Zn), tin (Sn), antimony (Sb), lead ( Pb), copper (Cu), copper silver (CuAg), nickel silver (NiAg), alloys thereof, or metal mixtures thereof. The above-mentioned copper silver (CuAg) and nickel silver (NiAg) refer to eutectic metals, which can not only achieve the reflective effect, but also achieve the effect of forming ohmic contact.

In the above light emitting diode of the present invention, the metal layer can be titanium, zirconium, molybdenum, or tungsten, and the thickness of the metal layer is 5 nm to 500 nm. Furthermore, the carbide layer can be diamond-like carbon, graphene, or a combination thereof, and the thickness of the carbide layer can be 5 nm to 1000 nm. Accordingly, the metal layer and the carbide layer can be formed into a multilayer structure stacked on each other. In an aspect of the present invention, the metal layer and the carbide layer can be independently stacked with 1 to 10 layers to form a multilayer structure with 2 to 20 layers stacked with each other.

In the light-emitting diode of the present invention, the methods for forming the metal layer and the carbide layer are not particularly limited. For example, the metal layer or the carbide layer can be formed by arc deposition or sputtering. In one aspect of the present invention, the carbide layer can be formed on the metal layer by arc deposition. In another aspect of the present invention, the carbide layer is formed on the metal layer by sputtering.

In the above-mentioned light-emitting diode of the present invention, the carbide layer is formed between the substrate and the semiconductor epitaxial layer, so the carbide layer needs to have a conductive function. Therefore, when the selected carbide layer is a diamond-like carbon, the diamond-like carbon It needs to be a conductive tetrahedral structure, and the carbon atom content of the diamond-like carbon is higher than 95%, and more than 25% of the carbon atoms of the diamond-like carbon have a twisted tetrahedral bonding structure. Accordingly, the metal layer and the carbide layer between the semiconductor epitaxial layer and the substrate can have the property of conduction.

In the light-emitting diode of the present invention, the first semiconductor epitaxial layer is sandwiched between the reflective layer and the active intermediate layer, and the active intermediate layer is sandwiched between the first semiconductor epitaxial layer and the second semiconductor epitaxial layer between. In one aspect of the present invention, the light-emitting diode can be a straight-through light-emitting diode, and its first semiconductor epitaxial layer can be completely covered by the active intermediate layer and the second semiconductor epitaxial layer, wherein the first semiconductor epitaxial layer , the reflective layer, the metal layer and the carbide layer have the same electrical properties and are electrically connected to each other. The light-emitting diode may further include a second electrode disposed on the surface of the second semiconductor epitaxial layer, wherein the second electrode and the second semiconductor epitaxial layer have the same electrical property to be electrically connected to each other. In a specific aspect of the present invention, the first semiconductor epitaxial layer, the reflective layer, the metal layer and the carbide layer are P-type electrical, and the second semiconductor epitaxial layer and the second electrode are N-type electrical. sex. Accordingly, the light emitting diode of the present invention can form a straight-through light emitting diode.

In the above light-emitting diode of the present invention, the semiconductor epitaxial layer may contain a dopant, and the dopant may be indium. Accordingly, the active intermediate layer of the semiconductor epitaxial layer can be formed as a multiple quantum well layer to improve the efficiency of converting electrical energy into light energy in the LED, but the invention is not limited thereto.

In the above light-emitting diode of the present invention, the substrate may include an insulating layer and a circuit substrate, wherein the material of the insulating layer may be selected from a group consisting of diamond-like carbon, aluminum oxide, ceramics, and diamond-containing epoxy resin at least one of; the circuit substrate can be a metal plate, a ceramic plate or a silicon substrate.

Generally speaking, it is known that diamond material can transfer heat at an ultrasonic speed of 15,000m/s due to its superhard material properties, which is equivalent to five times the heat transfer speed of silver. If it is used in light-emitting diodes, its average temperature can be reduced Or it can make the temperature distribution even and achieve the purpose of effective heat dissipation. The important technical feature of the present invention is to quickly remove the hot spot in the semiconductor epitaxial layer by means of ultrasonic heat dissipation, so as to optimize the luminous efficiency of the light emitting diode. Therefore, in the light-emitting diode of the present invention, the location of the hot spot is generally the active intermediate layer of the semiconductor epitaxial layer, so the distance between the active intermediate layer and the diamond material becomes very important. For example, in the above-mentioned light-emitting diode of the present invention, diamond-like carbon can be selected as the carbide layer and arranged between the semiconductor epitaxial layer and the substrate, so that the diamond-like carbon can provide the semiconductor epitaxial layer with an ultrasonic heat dissipation function to eliminate hot spots the goal of. In addition, the diamond-like carbon can also be the insulating layer of the substrate, as long as the distance between the diamond-like carbon and the hot spot is close enough to enable it to have the effect of ultrasonic heat dissipation, the present invention does not particularly limit its location.

Another object of the present invention is to provide a package structure on chip (chip on board, COB). By adjusting the structural design of the multi-quantum well layer and the carbide layer, the light-emitting diodes of the package structure on the chip can be used to generate heat during operation. During the process, heat is dissipated by means of ultrasonic waves, and hot spots in the LEDs are quickly removed to stabilize the lattice structure of the LEDs, thereby optimizing the heat dissipation efficiency of the LEDs and maintaining their luminous efficiency.

An aspect of the present invention provides a chip on board (COB), comprising: a circuit carrier including at least one electrical connection pad; a semiconductor epitaxial layer located on the surface of the circuit carrier , the semiconductor epitaxial layer includes a first semiconductor epitaxial layer, an active intermediate layer, and a second semiconductor epitaxial layer; a reflective layer, which is sandwiched between the semiconductor epitaxial layer and the circuit carrier; a metal layer, It is sandwiched between the reflective layer and the circuit carrier; and a carbide layer is sandwiched between the metal layer and the circuit carrier; wherein, the distance between the active intermediate layer and the carbide layer Can be 1 to 10 microns.

In the chip-on-board package structure of the present invention, the distance between the active intermediate layer and the carbide layer is preferably 2 microns.

In the chip-on-package structure of the present invention, the reflective layer may be composed of silver, or aluminum, or an alloy thereof. However, it should be understood that the material of the reflective layer is not limited thereto. For example, it may also be indium tin oxide (ITO), aluminum zinc oxide (AZO), zinc oxide (ZnO) ), graphene (graphene), nickel (Ni), cobalt (Co), palladium (Pd), platinum (Pt), gold (Au), zinc (Zn), tin (Sn), antimony (Sb), lead ( Pb), copper (Cu), copper silver (CuAg), nickel silver (NiAg), alloys thereof, or metal mixtures thereof. The above-mentioned copper silver (CuAg) and nickel silver (NiAg) refer to eutectic metals, which can not only achieve the reflective effect, but also achieve the effect of forming ohmic contact.

In the chip-on-chip package structure of the present invention, the metal layer can be titanium, zirconium, molybdenum, or tungsten, and the thickness of the metal layer is 5 nm to 500 nm. Furthermore, the carbide layer can be diamond-like carbon, graphene, or a combination thereof, and the thickness of the carbide layer can be 5 nm to 1000 nm. Accordingly, the metal layer and the carbide layer can be formed into a multilayer structure stacked on each other. In an aspect of the present invention, the metal layer and the carbide layer can be independently stacked with 1 to 10 layers to form a multilayer structure with 2 to 20 layers stacked with each other.

In the chip-on-chip package structure of the present invention, the method for forming the metal layer and the carbide layer is not particularly limited. For example, the metal layer or the carbide layer can be formed by arc deposition or sputtering. In one aspect of the present invention, the carbide layer can be formed on the metal layer by arc deposition. In another aspect of the present invention, the carbide layer is formed on the metal layer by sputtering.

In the packaging structure on chip board of the present invention, because the carbide layer is formed between the circuit carrier board and the semiconductor epitaxial layer, the carbide layer needs to have the function of conducting electricity. Therefore, when the selected carbide layer is diamond-like carbon , the diamond-like carbon must have a conductive tetrahedral structure, and the carbon atom content of the diamond-like carbon is higher than 95%, and more than 25% of the carbon atoms of the diamond-like carbon have a twisted tetrahedral bonding structure. Accordingly, the metal layer and the carbide layer between the semiconductor epitaxial layer and the substrate can have the property of conduction.

In the chip-on-board package structure of the present invention, the second semiconductor epitaxial layer is sandwiched between the reflective layer and the active intermediate layer, and the active intermediate layer is sandwiched between the first semiconductor epitaxial layer and the second semiconductor epitaxial layer. Between the semiconductor epitaxial layers, and the first semiconductor epitaxial layer partially does not cover the active intermediate layer and the second semiconductor epitaxial layer, thereby exposing a part of the first semiconductor epitaxial layer to provide an electrical connection.

In the chip-on-board packaging structure of the present invention, the multi-layer structure formed by the metal layer and the carbide layer can be respectively arranged on the surface of the second semiconductor epitaxial layer and the first semiconductor epitaxial layer, as electrodes and electrically connected to the circuit carrier. Specifically, in order to allow the semiconductor epitaxial layer to be electrically connected to the circuit carrier, the second semiconductor epitaxial layer and the metal layer and carbide layer disposed thereon can be of P-type electrical property; and the first The semiconductor epitaxial layer and the metal layer and carbide layer disposed thereon can be N-type electrical. Accordingly, the semiconductor epitaxial layer can be electrically connected to the circuit carrier.

In the chip-on-board package structure of the present invention, a soldering layer may also be included, which is arranged between the circuit carrier and the carbide layer, so that the semiconductor epitaxial layer can be firmly electrically connected to the circuit carrier .

In the chip-on-board package structure of the present invention, the semiconductor epitaxial layer may contain a dopant, and the dopant may be indium. Accordingly, the active intermediate layer of the semiconductor epitaxial layer can be formed as a multiple quantum well layer to improve the efficiency of converting electrical energy into light energy in the LED, but the invention is not limited thereto.

In the chip-on-board packaging structure of the present invention, the circuit carrier may include an insulating layer and a circuit substrate, wherein the material of the insulating layer may be selected from diamond-like carbon, aluminum oxide, ceramics, and diamond-containing epoxy At least one of resin group; the circuit substrate can be a metal plate, a ceramic plate or a silicon substrate.

Generally speaking, it is known that diamond material can transfer heat at an ultrasonic speed of 15,000m/s due to its superhard material properties, which is equivalent to five times the heat transfer speed of silver. If it is used in light-emitting diodes, its average temperature can be reduced Or it can make the temperature distribution even and achieve the purpose of effective heat dissipation. The important technical feature of the present invention is to quickly remove the hot spot in the semiconductor epitaxial layer by means of ultrasonic heat dissipation, so as to optimize the luminous efficiency of the light emitting diode. In the above chip-on-chip package structure of the present invention, the location where the hot spot is usually generated is the active intermediate layer of the semiconductor epitaxial layer. Therefore, the distance between the active intermediate layer and the diamond material becomes very important. For example, in the above-mentioned on-chip package structure of the present invention, diamond-like carbon can be selected as the carbide layer and arranged between the semiconductor epitaxial layer and the circuit carrier, so that the diamond-like carbon can provide the semiconductor epitaxial layer with ultrasonic heat dissipation. function to achieve the purpose of eliminating hot spots. In addition, the diamond-like carbon can also be the insulating layer of the substrate, as long as the distance between the diamond-like carbon and the hot spot is close enough to enable it to have the effect of ultrasonic heat dissipation, the present invention does not particularly limit its location.

Furthermore, in the chip-on-chip package structure of the present invention, the chip-on-chip package structure may further include a substrate disposed on the first semiconductor epitaxial layer. Specifically, a flip-chip light-emitting diode can be prepared on the substrate first, and the light-emitting diode is electrically connected and packaged on the circuit carrier through a soldering layer by flip-chip technology to form the chip board upper packaging structure. Therefore, if the substrate is a transparent substrate, it can remain on the semiconductor epitaxial layer, otherwise it needs to be removed. In a specific aspect of the present invention, the substrate may be a sapphire substrate remaining on the semiconductor epitaxial layer, but the present invention is not limited thereto.

The implementation of the present invention is illustrated by specific specific examples below, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied by other different specific embodiments, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

These drawings in the embodiments of the present invention are simplified schematic diagrams. However, these icons only show the components related to the present invention, and the components shown are not the appearance of the actual implementation. The number, shape and other proportions of the components in the actual implementation are a selective design, and the layout of the components is state may be more complex.

Embodiment one

The object of the present invention is to provide a light-emitting diode, which, by adjusting the structural design of the light-emitting diode, enables it to dissipate heat by means of ultrasonic waves and quickly remove hot spots in the active intermediate layer, thereby optimizing the heat dissipation efficiency of the light-emitting diode and maintaining its light emission efficiency.

Please refer to FIGS. 2A to 2E , which are schematic structural diagrams of the manufacturing process of the light emitting diode 1 according to the first embodiment of the present invention, wherein the light emitting diode 1 prepared in the first embodiment is a straight-through light emitting diode. First, as shown in FIG. 2A , a substrate 10 is provided, which includes an insulating layer 1070 and a circuit substrate 1071 . Next, as shown in FIG. 2B , a multi-layer structure 15 formed by stacking two metal layers 151 and two carbide layers 152 is formed on the substrate 10 by sputtering, wherein the metal layers 151 are made of titanium. , the carbide layers 152 are conductive diamond-like carbon, and the thicknesses of the metal layers 151 and the carbide layers 152 are each independently 100 nanometers. Next, please refer to FIG. 2C , a reflective layer 11 is formed on the metal layer 151 , wherein the reflective layer 11 is aluminum. In addition, because the prepared light-emitting diode 1 is a straight-through light-emitting diode, the above-mentioned metal layer 151, carbide layer 152 and reflective layer 11 must have the same electrical properties. In this embodiment one, the reflective layer 11, the metal Layer 151 and the carbide layer 152 are P-type electrical.

Please continue to refer to FIG. 2D, a semiconductor epitaxial layer 12 is formed above the reflective layer 11, wherein the semiconductor epitaxial layer 12 includes a first semiconductor epitaxial layer 121, an active intermediate layer 122, and a second semiconductor epitaxial layer 123, Wherein, the first semiconductor epitaxial layer 121, the active intermediate layer 122 and the second semiconductor epitaxial layer 123 are laminated, and the first semiconductor epitaxial layer 121 is interposed between the reflective layer 11 and the active intermediate layer 122. , the active intermediate layer 122 is sandwiched between the first semiconductor epitaxial layer 121 and the second semiconductor epitaxial layer 123 . In the first embodiment, the semiconductor epitaxial layer 12 is made of indium gallium nitride (InGaN), and the first semiconductor epitaxial layer 121 is a P-type epitaxial layer, and the second semiconductor epitaxial layer 123 is an N-type epitaxial layer. Here, it should be noted that the important technical feature of the present invention lies in the structural design of the carbide layer so that it can dissipate heat by means of ultrasonic waves. Therefore, in this embodiment one, the distance between the active intermediate layer 122 and the above-mentioned at least one carbide layer 152 is designed to be 2 microns, so that the diamond-like carbon as the carbide layer 152 can provide the semiconductor epitaxial layer 12 with ultrasonic heat dissipation. , quickly remove heat at an ultrasonic speed of 15,000 m/s, and reduce hot spots generated in the active intermediate layer 122 . In addition, the applicable material of the semiconductor epitaxial layer 12 of the present invention is not limited thereto, and other commonly used materials in the field can also be used. Furthermore, in the first embodiment, the active intermediate layer 122 is a multi-quantum well layer, which is used to improve the efficiency of converting electrical energy into light energy in the LED 1 .

Finally, please refer to FIG. 2E , a second electrode 13 is formed on the second semiconductor epitaxial layer 123 , wherein the second electrode is N-type electrical. In the light-emitting diode 1 of the first embodiment, the multilayer structure 15 formed by the metal layer 151 and the carbide layer 152 also functions as an electrode, and the reflective layer 11, the metal layer 151 and the carbide layer 152 and the first semiconductor epitaxial layer 121 are both P-type electrical; the second semiconductor epitaxial layer 123 and the second electrode 13 are both N-type electrical. It is a straight-through light-emitting diode.

Accordingly, as shown in FIG. 2A to FIG. 2E , the above-mentioned light-emitting diode 1 is manufactured, which includes: a substrate 10, which includes an insulating layer 1070, and a circuit substrate 1071; a semiconductor epitaxial layer 12, which is located on the substrate 10 , the semiconductor epitaxial layer 12 includes a first semiconductor epitaxial layer 121, an active intermediate layer 122, and a second semiconductor epitaxial layer 123, wherein the first semiconductor epitaxial layer 121 is sandwiched between the substrate 10 and the active intermediate layer 122, the active intermediate layer 122 is sandwiched between the first semiconductor epitaxial layer 121 and the second semiconductor epitaxial layer 123; a reflective layer 11, which is sandwiched between the substrate 10 and the semiconductor epitaxial layer 12; A multilayer structure 15 formed by stacking two metal layers 151 and two carbide layers 152, wherein the metal layer 151 is titanium and the metal layer 151 above the multilayer structure 15 is sandwiched between the reflective layer 11 and the Between the substrates 10, the carbide layer 152 is a conductive diamond-like substance and the carbide layer 152 under the multilayer structure 15 is sandwiched between the metal layer 151 and the substrate 10; wherein, the active intermediate layer 122 and The distance between the carbide layers is 2 microns, the first semiconductor epitaxial layer 121, the reflective layer 11, the metal layer 151 and the carbide layer 152 are P-type electrical, and the second semiconductor epitaxial layer 123 and The second electrode 13 is also N-type electrical. Accordingly, the light emitting diode 1 of the first embodiment, which is a straight-through light emitting diode, can be prepared.

Embodiment two

In addition to the straight-through light emitting diode of the first embodiment above, the important technical features of the present invention can also be applied to the on-chip packaging structure, thereby optimizing its luminous efficiency.

Please refer to FIGS. 3A to 3F , which are schematic diagrams of the manufacturing process of the chip-on-chip packaging structure 300 according to Embodiment 2 of the present invention. In Embodiment 2, the required light-emitting diode 3 is prepared first, which is a flip-chip light-emitting diode. .

First, as shown in FIG. 3A , a substrate 30 is provided. In the third embodiment, the substrate 30 is a sapphire substrate. Next, as shown in FIG. 3B, a semiconductor epitaxial layer 32 is formed above the substrate 30, wherein the semiconductor epitaxial layer 32 includes a first semiconductor epitaxial layer 321, an active intermediate layer 322, and a second semiconductor epitaxial layer 323. , wherein the first semiconductor epitaxial layer 321, the active intermediate layer 322 and the second semiconductor epitaxial layer 323 are stacked, and the first semiconductor epitaxial layer 321 is sandwiched between the substrate 30 and the active intermediate layer 322 , the active intermediate layer 322 is sandwiched between the first semiconductor epitaxial layer 321 and the second semiconductor epitaxial layer 323 . After the semiconductor epitaxial layer 32 is completed, part of the second semiconductor epitaxial layer 323 and part of the active intermediate layer 322 are removed to expose the underlying first semiconductor epitaxial layer 321 . In the second embodiment, the semiconductor epitaxial layer 32 is made of indium gallium nitride (InGaN), the first semiconductor epitaxial layer 321 is N-type, and the second semiconductor epitaxial layer 323 is P-type. In addition, the applicable material of the semiconductor epitaxial layer 32 of the present invention is not limited thereto, and other commonly used materials in the field can also be used. Furthermore, in the second embodiment, the active intermediate layer 322 is a multi-quantum well layer, which is used to improve the efficiency of converting electrical energy into light energy in the LED 3 .

Please continue to refer to FIG. 3C , a reflective layer 31 is formed on the portion of the unremoved second semiconductor epitaxial layer 323 . In the second embodiment, the reflective layer 31 is silver. However, the step of forming the reflective layer 31 can be selectively performed by those skilled in the art to which the present invention belongs. In other words, if the reflective layer is not intended to be provided, the step of forming the reflective layer 31 can be skipped.

Furthermore, referring to FIG. 3D, a multilayer structure 35 stacked with a metal layer 351 and a carbide layer 352 is formed on the reflective layer 31 by an arc deposition method, wherein the metal layer 351 is titanium and the The carbide layer 352 is an electrically conductive diamond-like carbon. In addition, a first electrode 34 is formed on the exposed first semiconductor epitaxial layer 321 . The material of the first electrode 34 is not particularly limited as long as it can form an electrical connection with the first semiconductor epitaxial layer 321 . In this second embodiment, the first electrode 34 is also a multi-layer structure (not shown) formed by a metal layer and a carbide layer, and by adjusting the number of layers stacked on each other, the first electrode 34 and the carbide Object layer 352 forms a coplanar surface. Furthermore, considering that the light emitting diode 3 needs to be electrically connected to the circuit board, the first electrode 34 and the first semiconductor epitaxial layer 321 are N-type electrical; the metal layer 351, the carbide layer 352 and the first The second semiconductor epitaxial layer 323 is P-type electrical. Next, as shown in FIG. 3E , on the surface of the first electrode 34 and the surface of the carbide layer 352, a first metal welding layer 36 and a second metal welding layer 37 are respectively formed, wherein the first metal welding layer 36 The surface of and the surface of the second metal soldering layer 37 form a coplanar surface. In this embodiment, the first metal soldering layer 36 and the second metal soldering layer 37 are composed of a gold layer and a gold-tin layer, and the gold-tin layer is a eutectic conductive material layer.

Finally, please refer to FIG. 3F , the light-emitting diode 3 prepared above is electrically connected and packaged on a circuit carrier 7 and the substrate 30 is removed by using laser lift-off technology to prepare this embodiment. The chip-on-chip package structure 300 . As shown in FIG. 3F , the chip-on-chip package structure 300 includes: a circuit carrier 7 ; and the light-emitting diode 3 manufactured above, which is electrically connected through the first metal soldering layer 36 and the second metal soldering layer 37 The circuit carrier 7 , wherein the circuit carrier 7 includes an insulating layer 70 , a circuit substrate 71 , and electrical connection pads 73 . Here, it should be noted that the important technical feature of the present invention is that the on-chip packaging structure can dissipate heat through ultrasonic waves through the carbide layer, and the distance between the active intermediate layer 322 and the carbide layer 352 is designed to be 2 microns , so that the diamond-like carbide layer 352 can be dissipated by ultrasonic waves, and the hot spots generated in the active intermediate layer 322 can be quickly removed at an ultrasonic speed of 15,000 m/s.

In addition, in the chip-on-chip package structure 300, the solder 72 formed on the surface of the electrical connection pad 73 can be used to connect the first metal soldering layer 36 and the second metal soldering layer 37 to the The electrical connection pad 73 of the circuit carrier 7 is electrically connected.

Accordingly, as shown in FIG. 3A to FIG. 3F , the chip-on-chip package structure 300 prepared above includes: a circuit carrier 7; a semiconductor epitaxial layer 32, which is located on the circuit carrier 7, and the semiconductor epitaxial layer 32 includes a first semiconductor epitaxial layer 321, an active intermediate layer 322, and a second semiconductor epitaxial layer 323; a reflective layer 31, which is sandwiched between the circuit carrier 7 and the second semiconductor epitaxial layer 323; A metal layer 351 is sandwiched between the reflective layer 31 and the circuit carrier 7; a carbide layer 352 is sandwiched between the metal layer 351 and the circuit carrier; and a first electrode 34 is provided On the partially exposed first semiconductor epitaxial layer 321; wherein, the second semiconductor epitaxial layer 323 is sandwiched between the reflective layer 31 and the active intermediate layer 322, and the active intermediate layer 322 is sandwiched between the first Between the semiconductor epitaxial layer 321 and the second semiconductor epitaxial layer 323, and the semiconductor epitaxial layer 32 is packaged on the circuit carrier 7 through a first metal soldering layer 36 and a second metal soldering layer 37, and the active middle The distance between layer 322 and the carbide layer 352 is 2 microns. In addition, the first electrode 34 and the first semiconductor epitaxial layer 321 are N-type electrical; the metal layer 351 , the carbide layer 352 and the second semiconductor epitaxial layer 323 are P-type electrical.

Embodiment Three

Please refer to FIG. 4 , which is a schematic structural diagram of a package-on-chip structure 400 according to the third embodiment. The preparation process of the third embodiment is roughly similar to that of the second embodiment above, except that after the prepared light-emitting diode 3 is electrically connected and packaged on the circuit carrier 7, since the substrate 30 used is a sapphire substrate, Therefore, without removing the substrate 30 , a package-on-chip structure 400 can also be prepared.

Accordingly, as shown in FIG. 4, the chip-on-chip package structure 400 obtained in the third embodiment includes: a circuit carrier 7; a semiconductor epitaxial layer 32, which is located on the circuit carrier 7, and the semiconductor epitaxial Layer 32 includes a first semiconductor epitaxial layer 321, an active intermediate layer 322, and a second semiconductor epitaxial layer 323; a reflective layer 31, which is sandwiched between the circuit carrier 7 and the second semiconductor epitaxial layer 323; A metal layer 351 is sandwiched between the reflective layer 31 and the circuit carrier 7; a carbide layer 352 is sandwiched between the metal layer 351 and the circuit carrier 7; a first electrode 34 is provided on the first semiconductor epitaxial layer 321; and a substrate 30 disposed on the first semiconductor epitaxial layer 321; wherein the second semiconductor epitaxial layer 323 is sandwiched between the reflective layer 31 and the active intermediate layer 322 , the active intermediate layer 322 is sandwiched between the first semiconductor epitaxial layer 321 and the second semiconductor epitaxial layer 323, and the semiconductor epitaxial layer 32 is formed by a first metal soldering layer 36 and a second metal soldering layer 37 It is packaged on the circuit carrier 7 , and the distance between the active intermediate layer 322 and the carbide layer 352 is 2 microns. In addition, the first electrode 34 and the first semiconductor epitaxial layer 321 are N-type electrical; the metal layer 351 , the carbide layer 352 and the second semiconductor epitaxial layer 323 are P-type electrical.

Embodiment Four

The preparation process of Embodiment 4 is similar to that of Embodiment 2 above, except that the insulating layer of the circuit carrier used is a type of diamond (the composition of which is the same as that of the carbide layer). Accordingly, the chip-on-board packaging structure completed in the fourth embodiment can simultaneously conduct ultrasonic heat dissipation through the carbide layer and the insulating layer.

Comparative example one

The first comparative example is substantially the same as the first embodiment, except that the through-type light-emitting diode of the first comparative example does not contain a carbide layer. Accordingly, the through-type light-emitting diode produced in Comparative Example 1 cannot conduct ultrasonic heat dissipation through the carbide layer.

Comparative example two

This comparative example is substantially the same as that of the second embodiment, except that the package structure on the chip of the comparative example does not contain a carbide layer. Accordingly, the package-on-chip structure prepared in the comparative example cannot conduct ultrasonic heat dissipation through the carbide layer.

Test example one

In this test example 1, under the same electroluminescent conditions, a near-field optical microscope is used to analyze the light field distribution of the through-type light-emitting diodes prepared in Example 1 and Comparative Example 1 to show the defects caused by hot spots. . Please refer to Figures 5A and 5B, which are the light field analysis results of Example 1 and Comparative Example 1, respectively. In Figure 5A, no black spots due to non-luminescence were observed, showing the straight-through luminescence of Example 1 When the diode is energized and illuminated (350 mA, 7 minutes), there will be no defects caused by hot spots; on the contrary, in Figure 5B, it can be found that there is a black spot in the center due to no light , showing that under the same conditions, the through-type light-emitting diode of Comparative Example 1 has defects caused by hot spots.

Test example two

This test example two is under the same electroluminescent condition, analyze the temperature of the package structure on the chip board of embodiment two and comparative example two after continuous electroluminescence (350 milliampere) reaches 16 minutes, wherein, embodiment two The temperature of the packaging structure on the chip board reaches 61.12°C to 68.21°C; while the temperature of Comparative Example 2 is 72.44°C to 84.11°C, much higher than that of Example 2. Therefore, it can be seen from the above results that the chip-on-chip packaging structure with ultrasonic heat dissipation function manufactured according to the present invention can dissipate heat by means of ultrasonic waves provided by diamond-like carbon, quickly remove heat, and reduce hot spots generated in the semiconductor epitaxial layer.

Test example three

In the third test example, at 25° C., a T3Ster thermal resistance meter was used to analyze the on-chip packaging structures prepared in the second embodiment and the second comparative example, so as to show the thermal conductivity. Please refer to FIGS. 6A and 6B , which are independent diagrams of thermal resistance analysis results of Example 2 and Comparative Example 2, wherein the horizontal axis represents thermal resistance in K/W; the vertical axis represents heat capacity in Ks/W. Please refer to FIG. 6A , which is the thermal resistance analysis result of the second embodiment of the present invention, wherein the thermal resistance between the circuit board and the LED is 0.98K/W. Please refer to FIG. 6B , which is the thermal resistance analysis result of Comparative Example 2 of the present invention, showing that the thermal resistance between the circuit board and the LED is 1.51K/W. When the packaging structure on the chip board contains a carbide layer formed by diamond-like carbon, and the distance between the carbide layer and the active intermediate layer is 2 microns, the thermal resistance between the two can be effectively reduced.

Test example four

In the fourth test example, a thermal image analyzer is used to analyze the temperature distribution of the through-type light-emitting diode chips prepared in the first embodiment and the first comparative example under the same electroluminescence condition. Please refer to FIGS. 7A and 7B , which are graphs showing the temperature distribution results of Embodiment 1 and Comparative Example 1, respectively. As shown in Figures 7A and 7B, under the same electroluminescence condition (350 mA), the temperature of the through-type light-emitting diode in Example 1 is about 58°C to 60°C; on the contrary, the temperature of the through-type light-emitting diode in Comparative Example 1 Then it is about 73°C to 76°C. Therefore, it can be seen from the above results that the through-type light-emitting diode with ultrasonic heat dissipation function manufactured according to the present invention can dissipate heat by means of ultrasonic waves provided by diamond-like carbon, quickly remove heat, and reduce hot spots generated in the semiconductor epitaxial layer.

Test example five

In the fifth test example, under the same electroluminescent condition, a thermal image analyzer is used to analyze the temperature distribution of the package structure on the chip prepared in the fourth example and the second comparative example. Please refer to FIGS. 8A and 8B , which are graphs showing the temperature distribution results of Embodiment 4 and Comparative Example 2, respectively. As shown in Figures 8A and 8B, under the same electroluminescence condition (700 mA), the temperature of the chip-on-chip package structure of Example 4 is about 55°C to 59°C; on the contrary, the temperature of the chip-on-chip package structure of Comparative Example 2 The temperature is about 65°C to 77°C. Therefore, it can be seen from the above results that when the carbide layer and the insulating layer contain diamond-like carbon at the same time, the synergistic effect produced by the two will make the chip-on-chip packaging structure prepared by the present invention have a better heat dissipation effect. Accordingly, the on-chip packaging structure with ultrasonic heat dissipation function manufactured according to the present invention can indeed dissipate heat by means of ultrasonic waves provided by diamond-like carbon, quickly remove heat, and reduce hot spots generated in the semiconductor epitaxial layer.

Accordingly, the results of the above-mentioned test examples 1 to 5 show that in the through-type light-emitting diode and chip-on-chip packaging structure of the present invention, because it contains diamond-like carbon and adjusts the distance between the active intermediate layer and the diamond-like carbon to be within 1 to 10 microns, it can The diamond-like carbon can quickly remove hot spots generated in the active intermediate layer through ultrasonic heat dissipation, thereby improving the overall thermal stability of the package structure on the chip board, improving its luminous efficiency and prolonging its product life.

To sum up, the light-emitting diode of the present invention and the chip-on-chip package structure using it, because of its structural design of ultrasonic heat dissipation, can quickly remove the hot spots generated during the operation of the light-emitting diode to stabilize its heat. The lattice structure optimizes its heat dissipation efficiency to maintain its luminous efficiency.

The above-mentioned embodiments are only examples for convenience of description, and the scope of rights claimed by the present invention should be based on the scope of claims in the application, rather than limited to the above-mentioned embodiments.

Claims (28)

1. a light-emitting diode, comprising:

One substrate;

Semiconductor epitaxial loayer, it is positioned at this substrate surface, and this semiconductor epitaxial layers comprises one first semiconductor epitaxial layers, an active intermediate and one second semiconductor epitaxial layers;

One reflector, it is folded between this semiconductor epitaxial layers and this substrate;

One metal level, it is folded between this reflector and this substrate; And

Monocarbide layer, it is folded between this metal level and this substrate;

Wherein, the distance between this active intermediate and this carbide lamella is 1 to 10 micron.

2. light-emitting diode as claimed in claim 1, wherein, the distance between this active intermediate and this carbide lamella is 2 microns.

3. light-emitting diode as claimed in claim 1, wherein, this metal level is titanium, zirconium, molybdenum or tungsten.

4. light-emitting diode as claimed in claim 1, wherein, this carbide lamella is diamond like carbon, Graphene or its combination.

5. light-emitting diode as claimed in claim 4, wherein, this diamond like carbon is the tetrahedral structure of a conductivity, and such adamantine carbon content is higher than more than 95%, and such adamantine 25% above carbon atom has a distorted tetrahedral bond structure.

6. light-emitting diode as claimed in claim 1, wherein, this metal level and this carbide lamella are mutual stacking sandwich construction.

7. light-emitting diode as claimed in claim 1, wherein, this first semiconductor epitaxial layers is folded between this reflector and this active intermediate, and this active intermediate is folded between this first semiconductor epitaxial layers and this second semiconductor epitaxial layers.

8. light-emitting diode as claimed in claim 1, wherein, this semiconductor epitaxial layers contains an alloy, and this alloy is indium.

9. light-emitting diode as claimed in claim 1, wherein, this substrate comprises an insulating barrier and a circuit substrate, and the material of this insulating barrier is selected at least one of free diamond like carbon, aluminium oxide, pottery and diamantiferous epoxy resin institute cohort group.

10. light-emitting diode as claimed in claim 9, wherein, this circuit substrate is a metallic plate, a ceramic wafer or a silicon substrate.

11. light-emitting diodes as claimed in claim 1, wherein, comprise one second electrode, and this second electrode is arranged at this second semiconductor epitaxial layers surface.

12. light-emitting diodes as claimed in claim 1, wherein, this first semiconductor epitaxial layers, this reflector, this metal level and carbide lamella are that P type is electrical, and this second semiconductor epitaxial layers and this second electrode are that N-type is electrical.

13. light-emitting diodes as claimed in claim 1, wherein, this carbide lamella is to provide the ultrasonic wave mode of this semiconductor epitaxial layers to dispel the heat.

Encapsulating structure on 14. 1 kinds of chip boards, comprising:

One circuit board, it comprises at least one electric connection pad;

Semiconductor epitaxial loayer, it is positioned at this circuit board surface, and this semiconductor epitaxial layers comprises one first semiconductor epitaxial layers, an active intermediate and one second semiconductor epitaxial layers;

One reflector, it is folded between this semiconductor epitaxial layers and this circuit board;

One metal level, it is folded between this reflector and this circuit board; And

Monocarbide layer, it is folded between this metal level and this circuit board;

Wherein, the distance between this active intermediate and this carbide lamella is 1 to 10 micron.

Encapsulating structure on 15. chip boards as claimed in claim 14, wherein, the distance between this active intermediate and this carbide lamella is 2 microns.

Encapsulating structure on 16. chip boards as claimed in claim 14, wherein, this metal level is titanium, zirconium, molybdenum or tungsten.

Encapsulating structure on 17. chip boards as claimed in claim 14, wherein, this carbide lamella is diamond like carbon, Graphene or its combination.

Encapsulating structure on 18. chip boards as claimed in claim 14, wherein, this diamond like carbon is the tetrahedral structure of a conductivity, and such adamantine carbon content is higher than more than 95%, and such adamantine 25% above carbon atom has a distorted tetrahedral bond structure.

Encapsulating structure on chip board described in 19. claims 14, wherein, this metal level and this carbide lamella are mutual stacking sandwich construction.

Encapsulating structure on 20. chip boards as claimed in claim 14, wherein, this second semiconductor epitaxial layers is folded between this reflector and this active intermediate, this active intermediate is folded between this first semiconductor epitaxial layers and this second semiconductor epitaxial layers, and this first semiconductor epitaxial layer segment does not cover this active intermediate and this second semiconductor epitaxial layers.

Encapsulating structure on 21. chip boards as claimed in claim 14, wherein, this semiconductor epitaxial layers contains an alloy, and this alloy is indium.

Encapsulating structure on 22. chip boards as claimed in claim 14, wherein, this circuit board comprises an insulating barrier and a circuit substrate, and the material of this insulating barrier is to select at least one of free diamond like carbon, aluminium oxide, pottery and diamantiferous epoxy resin institute cohort group.

Encapsulating structure on 23. chip boards as claimed in claim 22, wherein, this circuit substrate is a metallic plate, a ceramic wafer or a silicon substrate.

Encapsulating structure on 24. chip boards as claimed in claim 14, wherein, this second semiconductor epitaxial layers is that P type is electrical, and this first semiconductor epitaxial layers is that N-type is electrical.

Encapsulating structure on 25. chip boards as claimed in claim 14, wherein, this carbide lamella is to provide the ultrasonic wave mode of this semiconductor epitaxial layers to dispel the heat.

Encapsulating structure on 26. chip boards as claimed in claim 14, wherein, comprises a substrate, and this substrate is arranged on this first semiconductor epitaxial layers.

Encapsulating structure on 27. chip boards as claimed in claim 26, wherein, this substrate is a sapphire substrate.

Encapsulating structure on 28. chip boards as claimed in claim 14, wherein, comprises a weld layer, and this weld layer is arranged between this circuit board and this carbide lamella.