CN102610726B - Lighting components - Google Patents

Abstract

The invention discloses a light-emitting component, which at least comprises a light-emitting lamination, a first transparent conductive oxide layer positioned below the light-emitting lamination, a transparent insulating and blocking layer positioned below the first transparent conductive oxide layer, a second transparent conductive oxide layer positioned below the transparent insulating and blocking layer, and a metal reflecting layer positioned below the second transparent conductive oxide layer, wherein the metal reflecting layer and the second transparent conductive oxide layer form an omni-directional reflector (ODR), and the first transparent conductive oxide layer and the light-emitting lamination form ohmic contact, so that the light-emitting efficiency of the light-emitting component is improved.

Description

Lighting components

This application document is a divisional application of the No. 200810177820.2 patent application for invention filed on December 1, 2008 with the title of "light-emitting component".

technical field

The present invention relates to a light-emitting component, in particular to a light-emitting component structure with an insulating barrier layer (dielectric barrier layer) located between a first transparent conductive oxide layer and a second transparent conductive oxide layer.

Background technique

The light-emitting diode (light-emitting diode, LED) uses the energy difference between n-type semiconductors and p-type semiconductors to release energy in the form of light. This light-emitting principle is different from that of incandescent lamps. Principle, so light-emitting diodes are called cold light sources. In addition, light-emitting diodes have the advantages of high durability, long life, light weight, and low power consumption. Therefore, today's lighting market places high hopes on light-emitting diodes and regards them as a new generation of lighting tools.

Fig. 1 is a schematic diagram of the structure of a known light-emitting diode die (die). As shown in Fig. 1, a known light-emitting component 100 includes a conductive substrate 10; Omni-directional reflector 14 (omni-directional reflector, ODR) on the layer; Ohmic contact layer 15 on the omni-directional reflective layer 12, this ohmic contact layer 15 can be a transparent conductive material, such as transparent conductive oxide layer or thin metal; a light emitting stack 16 on the ohmic contact layer 15 ; and an electrode 18 disposed on the light emitting stack 16 .

In the known light emitting device 100 , the light emitting stack 16 includes at least a first conductive type semiconductor layer 160 , a light emitting layer 162 , and a second conductive type semiconductor layer 164 from top to bottom. And omnidirectional reflective layer 14 also comprises metal reflective layer 140, and its material can be metal materials such as gold, silver; Low refractive index layer 142, its material can be silicon dioxide or indium tin oxide (Indium Tin Oxide, ITO), in addition This all-round reflective layer 14 also includes a plurality of metal ohmic contact dots 144 (ohmic contact dot), which run through the above-mentioned low refractive index layer 142, and form electrical connections with the ohmic contact layer 15 and the metal reflective layer 140 respectively, thus conducting Through current, the light-emitting component 100 has better electrical characteristics.

However, in the manufacturing process of the above-mentioned known light-emitting component 100, the high-temperature process easily causes the ohmic contact layer 15 to react with the low-refractive index layer 142 in the omni-directional reflective layer 14, resulting in a decrease in the brightness of the light-emitting component 100: In addition, for The metal ohmic contact point 144 provided to make the light-emitting component 100 have good electrical conductivity easily absorbs the light emitted by the light-emitting layer 162 , which also reduces the luminous efficiency of the light-emitting component 100 .

In addition, the above-mentioned light-emitting component 100 can be further combined and connected with other components to form a light-emitting apparatus (light-emitting apparatus). FIG. 4 is a schematic structural view of a known light-emitting device. As shown in FIG. 4, the light-emitting device 600 includes a sub-mount 60 having at least one circuit 602; at least one solder 62 (solder) is located on the sub-mount 60, The light-emitting component 100 is bonded and fixed on the sub-carrier 60 through the solder 62, and the substrate 10 of the light-emitting component 100 is electrically connected to the circuit 602 on the sub-carrier 60; and the electrical connection structure 64 is used to electrically connect the light-emitting component. The electrode 18 of 100 and the circuit 602 on the sub-carrier 60; wherein, the above-mentioned sub-carrier 60 can be a lead frame (leadframe) or a large-size mosaic substrate (mounting substrate), so as to facilitate the circuit planning of the light emitting device 600 and improve its heat dissipation effect .

Contents of the invention

The present invention discloses a light-emitting component, comprising at least a light-emitting stack, a first transparent conductive oxide layer located under the light-emitting stack, a transparent insulating barrier layer located under the first transparent conductive oxide layer, a second transparent insulating barrier layer located below a transparent conductive oxide layer, and a metal reflective layer, wherein the metal reflective layer and the second transparent conductive oxide layer form an omni-directional reflector (omni-directional reflector, ODR), using the first transparent conductive oxide layer to form an ohmic contact with the light emitting stack, As a result, the luminous efficiency of the luminous component is increased.

Another object of the present invention is to use the transparent insulating barrier layer to avoid the problem of light absorption or shading caused by interaction between the first transparent conductive oxide layer, the second metal transparent conductive oxide layer and the metal reflective layer during the high-temperature manufacturing process.

In the following, specific embodiments will be described in detail in conjunction with the attached drawings, and it will be easier to understand the purpose, technical content, features and effects of the present invention.

Description of drawings

FIG. 1 is a schematic diagram of a known LED die structure.

Fig. 2 is a schematic structural diagram of an embodiment of the present invention.

Fig. 3 is a schematic structural diagram of another embodiment of the present invention.

Fig. 4 is a schematic structural diagram of a known light emitting device.

Explanation of reference signs

100: Light emitting components 10: Conductive substrate

12: Metal bonding layer 14: Omni-directional reflective layer

15: Ohmic contact layer 16: Luminous stack

18: Electrode 160: First conductivity type semiconductor layer

162: Light-emitting layer 164: Second conductivity type semiconductor layer

140: metal reflective layer 142: low refractive index layer

144: metal ohmic contact point 200: light-emitting component

20: Conductive substrate 22: Adhesive layer

24: Omni-directional reflective layer 26: The first transparent conductive oxide layer

28: Light-emitting stack 30: Electrode

240: Second transparent conductive oxide layer 242: Metal reflective layer

280: first conductivity type semiconductor layer 282: light emitting layer

284: second conductivity type semiconductor layer 32: transparent insulating barrier layer

320: Through hole 300: Light emitting component

40: Substrate 42: Adhesive layer

44: Omni-directional reflective layer 46: The first transparent conductive oxide layer

48: Luminous laminated layer 50: Transparent insulating barrier layer

440: Second transparent conductive oxide layer 442: Metal reflective layer

480: first conductivity type semiconductor layer 482: light emitting layer

484: second conductivity type semiconductor layer 52: first electrode

54: Second electrode 600: Light emitting device

60: Secondary carrier 602: Circuit

62: Solder 64: Electrical connection structure

Detailed ways

Embodiments of the present invention are described below with reference to the accompanying drawings.

FIG. 2 is a schematic structural diagram of an embodiment of the present invention. As shown in FIG. 2 , the light-emitting component 200 includes a conductive substrate 20, an adhesive layer 22 disposed on the conductive substrate 20, and an omnidirectional reflective layer 24 (omni- directional reflector, ODR), the first transparent conductive oxide layer 26 located on the above-mentioned omnidirectional reflective layer 24, the light-emitting laminated layer 28 arranged on the first transparent conductive oxide layer 26; and the electrode 30 located on the light-emitting laminated layer 28 Wherein, the above-mentioned omnidirectional reflective layer 24 and the first transparent conductive oxide layer 26 also include a transparent insulating barrier layer 32, and the omnidirectional reflective layer 24 also includes a second transparent conductive oxide layer 240 and a metal reflective layer 242 from top to bottom . In addition, the light emitting stack 28 includes at least a first conductivity type semiconductor layer 280, a light emitting layer 282, and a second conductivity type semiconductor layer 284 from top to bottom, wherein the material of the above light emitting stack 28 can be selected from aluminum (Al), Gallium (Ga), indium (In), phosphorus (P), arsenic (As) or nitrogen (N) and other III-V semiconductor materials, such as gallium nitride (GaN) series materials, aluminum gallium indium phosphide (AlGaInP ) series materials or gallium arsenide (GaAs) materials, etc.; and the structure of the light emitting layer 282 can be selected from single heterostructure (single heterostructure, SH), double heterostructure (double heterostructure, DH), double-sided double heterostructure structure (double-side doubleheterostructure, DDH) or multiple quantum wells (multi-quantum well, MQW).

In this embodiment, the material of the conductive substrate 20 can be semiconductor materials such as silicon (silicon), ceramic materials such as zinc oxide (ZnO), or metal materials such as copper, aluminum, molybdenum, or a combination of the above materials; the bonding layer 22 The material of the first transparent conductive oxide layer 26 and the second transparent conductive oxide layer 240 is selected from indium tin oxide (IndiumTin Oxide, ITO), aluminum oxide Zinc (Aluminum Zinc Oxide, AZO), cadmium tin oxide, antimony tin oxide, zinc oxide (ZnO), and zinc tin oxide material group, wherein the grain size of the first transparent conductive oxide layer 26 (grain size) , refractive index (reflective index) and other characteristics are different from the second transparent conductive oxide layer 240; in this embodiment, the average grain size of the first transparent conductive oxide layer 26 is larger than that of the second transparent conductive oxide layer 240, and The refractive index of the first transparent oxide layer 26 is smaller than that of the second transparent conductive oxide layer 240; moreover, the material of the metal reflective layer 242 can be indium (In), tin (Sn), aluminum (Al), gold (Au), platinum (Pt), zinc (Zn), silver (Ag), titanium (Ti), lead (Pb), germanium (Ge), copper (Cu), nickel (Ni), gold beryllium (AuBe) , gold germanium (AuGe), gold zinc (AuZn), lead tin (PbSn) and other highly reflective metals; and the material of the above-mentioned transparent insulating barrier layer 32 can be silicon dioxide (SiO ₂ ), silicon nitride ( SiN _x ) or aluminum oxide (Al ₂ O ₃ ), etc., the thickness thereof is about 5 to 300 nm.

In addition, in order to achieve good electrical conduction, the transparent insulating barrier layer 32 in this embodiment also includes one or more through holes 320, wherein the first transparent conductive oxide layer 26 fills the above-mentioned through holes. In the hole 320, and in contact with the second transparent conductive oxide layer 240 and form an electrical connection, in this embodiment, the area of the through hole 320 is less than 40% of the area of the transparent insulating barrier layer 32, preferably less than five percent of the area of the transparent insulating barrier layer 32 .

In this embodiment, since the first transparent conductive oxide layer 26 is used as the ohmic contact layer to form an ohmic contact with the light-emitting stack 28, in addition, the above-mentioned first transparent conductive oxide layer 26 is also in contact with the omnidirectional reflective layer 24 on the above-mentioned The second transparent conductive oxide layer 240 forms an electrical connection, so there is no need to use light-absorbing materials to enhance the electrical properties of the light-emitting component 200, and also reduce the chance of the light emitted by the light-emitting layer 282 being absorbed; moreover, because the first transparent conductive oxide layer 26 and the entire There is a transparent insulating barrier layer 32 between the second transparent conductive oxide layer 240 on the azimuth reflection layer 24 to prevent the first transparent conductive oxide layer 26 and the second transparent conductive oxide layer 240 from reacting in the high temperature environment during the process of manufacturing the light-emitting component , thereby increasing the brightness of the light emitting component 200 .

FIG. 3 is a schematic structural diagram of another embodiment of the present invention. As shown in FIG. 3 , the light-emitting component 300 includes a substrate 40, an adhesive layer 42 disposed on the substrate 40, and an omnidirectional reflective layer 44 (omni- directional reflector, ODR), the first transparent conductive oxide layer 46 located on the above-mentioned omnidirectional reflective layer 44, and the light emitting stack 48 disposed on the first transparent conductive oxide layer 46; wherein, the above-mentioned omnidirectional reflective layer 44 and The first transparent conductive oxide layer 46 further includes a transparent insulating barrier layer 50 , and the omnidirectional reflective layer 44 further includes a second transparent conductive oxide layer 440 and a metal reflective layer 442 from top to bottom.

In addition, the light emitting stack 48 includes at least a first conductivity type semiconductor layer 480, a light emitting layer 482, and a second conductivity type semiconductor layer 484 from top to bottom. In the above light emitting stack 48, there are exposed second conductivity type semiconductor layers 484; and the first electrode 52 and the second electrode 54 are respectively located on the surface of the first conductive type semiconductor layer 480 and the exposed second conductive type semiconductor layer 484, wherein the above-mentioned light-emitting stack 28 can be selected from materials including aluminum ( Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As) or nitrogen (N) and other III-V semiconductor materials, such as gallium nitride (GaN) series materials, aluminum gallium phosphide Indium (AlGaInP) series materials or gallium arsenide (GaAs) materials, etc.; and the structure of the light emitting layer 282 can be selected from single heterostructure (single heterostructure, SH), double heterostructure (double heterostructure, DH), double-sided double Heterostructure (double-side double heterostructure, DDH) or multiple quantum wells (multi-quantum well, MQW).

In this embodiment, the substrate 40 can be semiconductor materials such as silicon (silicon), gallium arsenide (GaAs), ceramic materials such as aluminum nitride (AlN), aluminum oxide (Al ₂ O ₃ ), or copper, aluminum, molybdenum Metal materials such as metal materials or materials combined with the above materials; the bonding layer 42 can be indium, tin, gold, aluminum, silver, alloys of the above metals or polyimide (PI), benzocyclobutene (BCB) and perfluorinated Substances such as cyclobutane (PFCB); the materials of the first transparent conductive oxide layer 46 and the second transparent conductive oxide layer 440 are selected from indium tin oxide (Indium Tin Oxide, ITO), aluminum zinc oxide (Aluminum Zinc Oxide, AZO), A material group composed of cadmium tin oxide, antimony tin oxide, zinc oxide (ZnO), and zinc tin oxide, wherein the first transparent conductive oxide layer 46 has characteristics such as grain size and refractive index Different from the second transparent conductive oxide layer 440, in this embodiment, the average grain size of the first transparent oxide layer 46 is larger than that of the second transparent conductive oxide layer 440, and the refractive index of the first transparent oxide layer 46 Compared with the second transparent conductive oxide layer 440, it is smaller; moreover, the material of the metal reflective layer 442 can be indium (In), tin (Sn), aluminum (Al), gold (Au), platinum (Pt), Zinc (Zn), Silver (Ag), Titanium (Ti), Lead (Pb), Germanium (Ge), Copper (Cu), Nickel (Ni), Gold Beryllium (AuBe), Gold Germanium (AuGe), Zinc gold (AuZn), lead tin (PbSn) and other highly reflective metals; and the material of the above-mentioned transparent insulating barrier layer 50 can be silicon dioxide (SiO ₂ ), silicon nitride (SiN _x ) or aluminum oxide (Al ₂ O ₃ ), etc., the thickness thereof is about 5 to 300 nm.

In this embodiment, since the first transparent conductive oxide layer 46 and the second transparent conductive oxide layer 440 in the omnidirectional reflection layer 44 have a transparent insulating barrier layer 50, it is used to prevent the first transparent conductive oxide layer 46 from contacting the second transparent conductive oxide layer 440. The transparent conductive oxide layer 440 reacts in the high temperature environment in the process of manufacturing the light emitting element, thereby improving the brightness of the light emitting element 300 .

The above-described embodiments are only to illustrate the technical ideas and characteristics of the present invention, and its purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly. When it cannot limit the protection scope of the present invention, that is, generally Equivalent changes or modifications made to the spirit disclosed in the present invention shall still fall within the protection scope of the present invention.

Claims (8)

1. a light-emitting component, at least comprises:

Luminous lamination;

First oxidic, transparent, conductive layers of simple layer, directly contacts with this luminous lamination and has first refractive rate;

Second oxidic, transparent, conductive layers of simple layer, directly contacts with this first oxidic, transparent, conductive layers, and this second oxidic, transparent, conductive layers has the second refractive index being different from this first refractive rate; And

Metallic reflector, directly contacts with this second oxidic, transparent, conductive layers,

Wherein this luminous lamination is electrically connected to this second oxidic, transparent, conductive layers by this first oxidic, transparent, conductive layers;

And do not exist to strengthen electrical light absorbent between this metallic reflector and the first oxidic, transparent, conductive layers.

2. light-emitting component as claimed in claim 1, wherein this first refractive rate is less than this second refractive index.

3. light-emitting component as claimed in claim 1, also comprises:

Substrate; And

Gluing layer, between this substrate and this metallic reflector.

4. a light-emitting component, at least comprises:

Metallic reflector;

First oxidic, transparent, conductive layers, has the first average grain size;

Second oxidic, transparent, conductive layers is between this metallic reflector and this first oxidic, transparent, conductive layers, this second oxidic, transparent, conductive layers has the second average grain size being different from this first average grain size, and this first average grain size is greater than this second average grain size; And

Luminous lamination, is electrically connected to this second oxidic, transparent, conductive layers by this first oxidic, transparent, conductive layers;

Wherein do not exist to strengthen electrical light absorbent between this metallic reflector and the first oxidic, transparent, conductive layers.

5. light-emitting component as claimed in claim 4, wherein this first oxidic, transparent, conductive layers directly contacts with this second oxidic, transparent, conductive layers.

6. light-emitting component as claimed in claim 4, also comprises:

Substrate; And

Gluing layer, between this substrate and this metallic reflector.

7. a light-emitting component, at least comprises:

Luminous lamination;

First oxidic, transparent, conductive layers, has first refractive rate;

Second oxidic, transparent, conductive layers, is electrically connected to this luminous lamination by this first oxidic, transparent, conductive layers, and this second oxidic, transparent, conductive layers has the second refractive index being different from this first refractive rate;

Metallic reflector, is electrically connected with this second oxidic, transparent, conductive layers; And

Transparent insulation barrier layer, does not contact with this metallic reflector and between this luminous lamination and this second oxidic, transparent, conductive layers.

8. light-emitting component as claimed in claim 7, also comprises:

Substrate; And

Gluing layer, between this substrate and this luminous lamination.