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CN100365834C - Light emitting diode with thermal channel bonding layer and light emitting diode array - Google Patents

Light emitting diode with thermal channel bonding layer and light emitting diode array Download PDF

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CN100365834C
CN100365834C CNB2004100556540A CN200410055654A CN100365834C CN 100365834 C CN100365834 C CN 100365834C CN B2004100556540 A CNB2004100556540 A CN B2004100556540A CN 200410055654 A CN200410055654 A CN 200410055654A CN 100365834 C CN100365834 C CN 100365834C
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heat
emitting diode
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CN1734797A (en
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谢明勋
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Epistar Corp
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Abstract

The invention discloses a light-emitting diode with a hot channel bonding layer, which is characterized in that a metal lug or a semiconductor lug is formed in the bonding layer between a combination substrate and an LED lamination layer to penetrate through the bonding layer so as to form a heat dissipation channel, so that the heat dissipation effect of the light-emitting diode is improved, and the stability and the light-emitting efficiency of the light-emitting diode are further improved. The light emitting diode at least comprises: a high heat dissipation substrate; an insulating layer; an LED lamination formed on the insulating layer; and an adhesive layer with a bump thermal via between the substrate and the insulating layer, wherein the bump penetrates or partially penetrates the adhesive layer. The invention also discloses a light-emitting diode array with the hot channel bonding layer.

Description

具有热通道黏结层的发光二极管及发光二极管阵列 Light-emitting diode and light-emitting diode array with thermal channel bonding layer

技术领域 technical field

本发明涉及一种具有黏结层的发光二极管，尤其关于一种具有热通道黏结层的发光二极管。The invention relates to a light-emitting diode with an adhesive layer, in particular to a light-emitting diode with a thermal channel adhesive layer.

背景技术 Background technique

发光二极管的应用颇为广泛，例如，可应用于光学显示装置、交通号志、数据储存装置、通讯装置、照明装置、以及医疗装置。如何提高发光二极管的亮度，是在发光二极管的制造上的重要课题。Light-emitting diodes are widely used, for example, in optical display devices, traffic signs, data storage devices, communication devices, lighting devices, and medical devices. How to improve the brightness of light-emitting diodes is an important issue in the manufacture of light-emitting diodes.

在台湾专利公告第550834号发明中公开了一种发光二极管构造及其制法，将一发光二极管外延结构成长于一吸光第一基板上，再利用一高分子材料的软质介电黏结层将该发光二极管外延表面与一高热导系数第二基板做接合，以增加芯片散热效果，增加发光二极管发光效率。在上述发明专利案中将外延层成长于该吸光第一基板上，再采用黏结层将外延层与高热导系数第二基板连结后去除吸光第一基板以降低热阻、增加散热功能、及增加发光效率；然而，因该发光二极管结构热阻相当于该外延层热阻、该软质介电黏结层热阻及该高热导系数第二基板热阻的总和，其中，高分子材料的软质介电黏结层的热导系数约介于0.1W/mk到0.3W/mk之间，热导系数很小，导致该发光二极管元件仍无法充分发挥高热导基板的散热特性，具有散热不佳的缺点。Invention No. 550834 of Taiwan Patent Announcement discloses a light-emitting diode structure and its manufacturing method. A light-emitting diode epitaxial structure is grown on a light-absorbing first substrate, and then a soft dielectric bonding layer of a polymer material is used to bond The epitaxial surface of the light-emitting diode is bonded with a second substrate with high thermal conductivity to increase the cooling effect of the chip and increase the luminous efficiency of the light-emitting diode. In the above invention patent, the epitaxial layer is grown on the light-absorbing first substrate, and then the epitaxial layer is connected to the second substrate with high thermal conductivity by using an adhesive layer, and then the light-absorbing first substrate is removed to reduce thermal resistance, increase heat dissipation, and increase light emission. efficiency; however, because the thermal resistance of the light-emitting diode structure is equivalent to the sum of the thermal resistance of the epitaxial layer, the thermal resistance of the soft dielectric bonding layer and the thermal resistance of the second substrate with high thermal conductivity, among them, the soft dielectric of the polymer material The thermal conductivity of the electrical bonding layer is between 0.1W/mk and 0.3W/mk, and the thermal conductivity is very small. As a result, the light-emitting diode element still cannot fully utilize the heat dissipation characteristics of the high thermal conductivity substrate, and has the disadvantage of poor heat dissipation. .

发明内容 Contents of the invention

鉴于上述发明具有散热不佳的缺点，本发明要解决的主要技术问题是具有黏结层的发光二极管的散热问题，本发明要解决的另一技术问题是提供高功率发光二极管一解决散热问题的方法。In view of the above-mentioned invention having the disadvantage of poor heat dissipation, the main technical problem to be solved by the present invention is the heat dissipation problem of the light-emitting diode with an adhesive layer. Another technical problem to be solved by the present invention is to provide a high-power light-emitting diode-a method for solving the heat dissipation problem .

为解决上述发明的缺点，本案发明人提出一个发明概念，认为若于LED叠层及基板之间，以金属凸块或半导体凸块形成的热通道穿透或部分穿透结合LED叠层及基板的黏结层，可将LED叠层产生的热透过凸块形成的热通道传导到基板，以有效解决具有黏结层发光二极管的散热问题及高功率发光二极管的散热问题。In order to solve the shortcomings of the above invention, the inventor of this case proposed an inventive concept, thinking that if the thermal channel formed by the metal bump or semiconductor bump penetrates or partially penetrates the LED stack and the substrate between the LED stack and the substrate The adhesive layer can conduct the heat generated by the LED stack to the substrate through the thermal channel formed by the bumps, so as to effectively solve the heat dissipation problem of the LED with the adhesive layer and the heat dissipation problem of the high-power LED.

为达到上述目的，本发明提供一种具有热通道黏结层的发光二极管，包含一高散热基板、形成于该高散热基板上的一具有凸块热通道的黏结层，其中，通过凸块穿透或部分穿透黏结层以形成热通道、形成于该具有凸块热通道的黏结层上的一反射层、形成于该反射层上的一绝缘层、形成于该绝缘层上的一透明导电层，其中，该透明导电层的上表面包含一第一表面区域与一第二表面区域、形成于该第一表面区域上的一第一接触层、形成于该第一接触层上的一第一束缚层、形成于该第一束缚层上的一发光层、形成于该发光层上的一第二束缚层、形成于该第二束缚层上的一第二接触层、形成于该第二接触层上的一第一接线电极、以及形成于该第二表面区域上的一第二接线电极；亦可以在该高散热基板与该具有凸块热通道的黏结层之间形成一绝缘层，而不影响本发明目的。In order to achieve the above object, the present invention provides a light-emitting diode with a thermal channel bonding layer, including a high heat dissipation substrate, an bonding layer with a bump thermal channel formed on the high heat dissipation substrate, wherein the bump penetrates Or partly penetrate the adhesive layer to form a thermal channel, a reflective layer formed on the adhesive layer with a bump thermal channel, an insulating layer formed on the reflective layer, a transparent conductive layer formed on the insulating layer , wherein the upper surface of the transparent conductive layer includes a first surface area and a second surface area, a first contact layer formed on the first surface area, a first contact layer formed on the first contact layer Constraint layer, a light-emitting layer formed on the first confinement layer, a second confinement layer formed on the light-emitting layer, a second contact layer formed on the second confinement layer, a second contact layer formed on the second contact layer, and a second wiring electrode formed on the second surface area; an insulating layer may also be formed between the high heat dissipation substrate and the bonding layer with the heat channel of the bump, and Does not affect the purpose of the present invention.

前述高散热基板，包含选自于GaP、Si、SiC及金属所构成材料组群中的至少一种材料；前述的凸块热通道可以是金属凸块热通道或者是半导体凸块热通道，包含选自于In、Sn、Al、Au、Pt、Zn、Ge、Ag、Ti、Pb、Pd、Cu、AuBe、AuGe、Ni、PbSn、AuZn、GaP、Si及SiC所构成材料组群中的至少一种材料或其它可代替的材料；前述黏结层包含选自于聚酰亚胺(PI)、苯并环丁烷(BCB)及过氟环丁烷(PFCB)所构成材料组群中的至少一种材料或其它可代替的材料；前述反射层，包含选自于In、Sn、Al、Au、Pt、Zn、Ag、Ti、Pb、Pd、Ge、Cu、AuBe、AuGe、Ni、PbSn及AuZn所构成材料组群中的至少一种材料；前述绝缘层选自SiNx、SiO2、Al2O3及TiO2所构成材料组群中的至少一种材料或其它可代替的材料；前述透明导电层包含选自于氧化铟锡、氧化镉锡、氧化锑锡、氧化锌及氧化锌锡所构成材料组群中的至少一种材料；前述第一接触层包含选自于GaP、GaAs、GaAsP、InGaP、AlGaInP、AlGaAs、GaN、InGaN及AlGaN所构成材料组群中的至少一种材料；前述第一束缚层包含AlGaInP、AlInP、AlN、GaN、AlGaN、InGaN及AlGaInN所构成材料组群中的至少一种材料；前述发光层包含AlGaInP、InGaP、GaN、AlGaN、InGaN及AlGaInN所构成材料组群中的至少一种材料；前述第二束缚层包含AlGaInP、AlInP、AlN、GaN、AlGaN、InGaN及AlGaInN所构成材料组群中的至少一种材料；前述第二接触层包含选自于GaP、GaAs、GaAsP、InGaP、AlGaInP、AlGaAs、GaN、InGaN及AlGaN所构成材料组群中的至少一种材料。The aforementioned high heat dissipation substrate includes at least one material selected from the material group consisting of GaP, Si, SiC and metal; the aforementioned bump thermal channel may be a metal bump thermal channel or a semiconductor bump thermal channel, including At least one selected from the material group consisting of In, Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, PbSn, AuZn, GaP, Si and SiC A material or other alternative materials; the aforementioned bonding layer includes at least one material selected from the group consisting of polyimide (PI), benzocyclobutane (BCB) and perfluorocyclobutane (PFCB). A material or other alternative materials; the aforementioned reflective layer, comprising selected from In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn and At least one material in the material group formed by AuZn; the aforementioned insulating layer is selected from at least one material or other replaceable materials in the material group formed by SiNx, SiO2, Al2O3 and TiO2; the aforementioned transparent conductive layer comprises a material selected from At least one material in the material group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide and zinc tin oxide; the aforementioned first contact layer is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, At least one material in the material group consisting of AlGaAs, GaN, InGaN, and AlGaN; the aforementioned first confinement layer includes at least one material in the material group consisting of AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN, and AlGaInN; The aforementioned light-emitting layer includes at least one material in the material group consisting of AlGaInP, InGaP, GaN, AlGaN, InGaN, and AlGaInN; At least one material in the group; the aforementioned second contact layer includes at least one material selected from the material group consisting of GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN and AlGaN.

附图说明 Description of drawings

图1为一示意图，显示依本发明一优选实施例的一种发光二极管构造；FIG. 1 is a schematic diagram showing a structure of a light emitting diode according to a preferred embodiment of the present invention;

图2为一示意图，显示依本发明另一优选实施例的一种发光二极管构造；FIG. 2 is a schematic diagram showing a structure of a light emitting diode according to another preferred embodiment of the present invention;

图3为一示意图，显示依本发明又一优选实施例的一种发光二极管阵列构造。FIG. 3 is a schematic diagram showing a light emitting diode array structure according to another preferred embodiment of the present invention.

附图标记说明Explanation of reference signs

7     连接发光二极管阵列的电极7 Connect the electrodes of the LED array

8     第二接线电极                  9     第一接线电极8 The second wiring electrode 9 The first wiring electrode

10    具有凸块热通道的高散热基板10 High heat dissipation substrate with bump thermal channel

11    高散热基板                    12    凸块热通道11 High heat dissipation substrate 12 Bump thermal channel

13    黏结层                        14    反射层13 Adhesive layer 14 Reflective layer

15    绝缘层                        16    透明导电层15 Insulation layer 16 Transparent conductive layer

17    第一接触层                    18    第一束缚层17 The first contact layer 18 The first binding layer

19    发光层                        20    第二束缚层19 luminescent layer 20 second binding layer

111   绝缘层                        112   绝缘层111 Insulation layer

具体实施方式 Detailed ways

实施例1Example 1

请参阅图1，依本发明一优选实施例具有热通道黏结层的发光二极管，包含一高散热基板11、形成于该高散热基板上的一具有凸块热通道12的黏结层13，其中，通过凸块穿透或部分穿透黏结层以形成热通道、形成于该具有凸块热通道的黏结层上的一反射层14、形成于该反射层上的一绝缘层15、形成于该绝缘层上的一透明导电层16，其中，该透明导电层的上表面包含一第一表面区域与一第二表面区域、形成于该第一表面区域上的一第一接触层17、形成于该第一接触层上的一第一束缚层18、形成于该第一束缚层上的一发光层19、形成于该发光层上的一第二束缚层20、形成于该第二束缚层上的一第二接触层21、形成于该第二接触层上的一第一接线电极9、以及形成于该透明导电层第二表面区域上的一第二接线电极8；亦可以在该高散热基板与该具有凸块热通道的黏结层之间形成一绝缘层，而不影响本发明目的。Please refer to FIG. 1 , according to a preferred embodiment of the present invention, a light-emitting diode with a thermal channel adhesive layer includes a high heat dissipation substrate 11, an adhesive layer 13 with a bump thermal channel 12 formed on the high heat dissipation substrate, wherein, The bump penetrates or partially penetrates the adhesive layer to form a thermal channel, a reflective layer 14 formed on the adhesive layer with a bump thermal channel, an insulating layer 15 formed on the reflective layer, and an insulating layer formed on the insulating layer. A transparent conductive layer 16 on the layer, wherein the upper surface of the transparent conductive layer includes a first surface area and a second surface area, a first contact layer 17 formed on the first surface area, formed on the A first confinement layer 18 on the first contact layer, a light-emitting layer 19 formed on the first confinement layer, a second confinement layer 20 formed on the light-emitting layer, a light-emitting layer 20 formed on the second confinement layer A second contact layer 21, a first connection electrode 9 formed on the second contact layer, and a second connection electrode 8 formed on the second surface area of the transparent conductive layer; An insulating layer is formed between the bonding layer with the thermal channel of the bump, which does not affect the purpose of the present invention.

实施例2Example 2

请参阅图2，依本发明另一优选实施例具有热通道的黏结发光二极管，包含一具有凸块热通道的高散热基板10，形成于该具有凸块热通道的高散热基板上的绝缘层111、形成于该绝缘层上的黏结层13，通过凸块使得绝缘层穿透或部分穿透黏结层、形成于该绝缘层以及黏结层上的一透明导电层16，其中，该透明导电层的上表面包含一第一表面区域与一第二表面区域、形成于该第一表面区域上的一第一接触层17、形成于该第一接触层上的一第一束束缚层18、形成于该第一束缚层上的一发光层19、形成于该发光层上的一第二束缚层20、形成于该第二束缚层上的一第二接触层21、形成于该第二接触层上的一第一接线电极9、以及形成于该透明导电层第二表面区域上的一第二接线电极8。Please refer to FIG. 2 , according to another preferred embodiment of the present invention, a bonded light-emitting diode with thermal channels includes a high heat dissipation substrate 10 with bump thermal channels, and an insulating layer formed on the high heat dissipation substrate with bump thermal channels 111. An adhesive layer 13 formed on the insulating layer, through which the insulating layer penetrates or partially penetrates the adhesive layer, a transparent conductive layer 16 formed on the insulating layer and the adhesive layer, wherein the transparent conductive layer The upper surface of the upper surface comprises a first surface area and a second surface area, a first contact layer 17 formed on the first surface area, a first confinement layer 18 formed on the first contact layer, formed A light emitting layer 19 on the first binding layer, a second binding layer 20 formed on the light emitting layer, a second contact layer 21 formed on the second binding layer, a second contact layer formed on the second contact layer A first connection electrode 9 on the transparent conductive layer, and a second connection electrode 8 formed on the second surface area of the transparent conductive layer.

实施例3Example 3

请参阅图3，依本发明又一优选实施例具有热通道的黏结发光二极管阵列，其与图1的第一优选实施例类似，不同处在其于绝缘层15的上表面包含多个第一表面区域与多个第二表面区域、形成于该绝缘层多个第一表面区域上的多个透明导电层16，该多个透明导电层的上具有多个第一表面区域及多个第二表面区域、形成于该多个透明导电层的多个第一表面区域上的多个LED叠层，该LED叠层依序包含第一接触层17、第一束缚层18、发光层19、第二束缚层20、第二接触层21、形成于该绝缘层第二表面区域上及LED叠层之间的绝缘层112、形成于该透明导电层第二表面区域上与相邻LED叠层的第二接触层相接的电极7、形成于特定第二接触层上的一第一接线电极9、以及形成于该特定透明导电层第二表面区域上的一第二接线电极8，上述多个LED叠层依需求而电连接，得到一发光二极管阵列。Please refer to FIG. 3 , according to another preferred embodiment of the present invention, there is a bonded light-emitting diode array with thermal channels, which is similar to the first preferred embodiment in FIG. Surface area and a plurality of second surface areas, a plurality of transparent conductive layers 16 formed on the plurality of first surface areas of the insulating layer, the plurality of transparent conductive layers have a plurality of first surface areas and a plurality of second A surface area, a plurality of LED stacks formed on the plurality of first surface areas of the plurality of transparent conductive layers, the LED stack sequentially includes a first contact layer 17, a first binding layer 18, a light emitting layer 19, a first Two binding layers 20, a second contact layer 21, an insulating layer 112 formed on the second surface area of the insulating layer and between LED stacks, and an insulating layer 112 formed on the second surface area of the transparent conductive layer and adjacent LED stacks The electrode 7 connected to the second contact layer, a first connection electrode 9 formed on the specific second contact layer, and a second connection electrode 8 formed on the second surface area of the specific transparent conductive layer, the above-mentioned multiple The LED stacks are electrically connected as required to obtain an LED array.

前述高散热基板或具有凸块热通道的高散热基板，包含选自于GaP、Si、SiC及金属所构成材料组群中的至少一种材料；前述的凸块热通道可以是金属凸块热通道或者是半导体凸块热通道，包含选自于In、Sn、Al、Au、Pt、Zn、Ge、Ag、Ti、Pb、Pd、Cu、AuBe、AuGe、Ni、PbSn、AuZn、GaP、Si及SiC所构成材料组群中的至少一种材料或其它可代替的材料；前述黏结层包含选自于聚酰亚胺(PI)、苯并环丁烷(BCB)及过氟环丁烷(PFCB)所构成材料组群中的至少一种材料或其它可代替的材料；前述反射层，包含选自于In、Sn、Al、Au、Pt、Zn、Ag、Ti、Pb、Pd、Ge、Cu、AuBe、AuGe、Ni、PbSn及AuZn所构成材料组群中的至少一种材料；前述绝缘层选自SiNx、SiO2、Al2O3及TiO2所构成材料组群中的至少一种材料或其它可代替的材料；前述透明导电层包含选自于氧化铟锡、氧化镉锡、氧化锑锡、氧化锌及氧化锌锡所构成材料组群中的至少一种材料；前述第一接触层包含选自于GaP、GaAs、GaAsP、InGaP、AlGaInP、AlGaAs、GaN、InGaN及AlGaN所构成材料组群中的至少一种材料；前述第一束缚层包含AlGaInP、AlInP、AlN、GaN、AlGaN、InGaN及AlGaInN所构成材料组群中的至少一种材料；前述发光层包含AlGaInP、InGaP、GaN、AlGaN、InGaN及AlGaInN所构成材料组群中的至少一种材料；前述第二束缚层包含AlGaInP、AlInP、AlN、GaN、AlGaN、InGaN及AlGaInN所构成材料组群中的至少一种材料；前述第二接触层包含选自于GaP、GaAs、GaAsP、InGaP、AlGaInP、AlGaAs、GaN、InGaN及AlGaN所构成材料组群中的至少一种材料。The aforesaid high heat dissipation substrate or the high heat dissipation substrate with a bump thermal channel includes at least one material selected from the group of materials composed of GaP, Si, SiC and metal; the aforementioned bump thermal channel may be a metal bump thermal channel. Channel or semiconductor bump thermal channel, containing selected from In, Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, PbSn, AuZn, GaP, Si And at least one material in the material group composed of SiC or other alternative materials; the aforementioned bonding layer includes polyimide (PI), benzocyclobutane (BCB) and perfluorocyclobutane ( PFCB) constitutes at least one material in the material group or other alternative materials; the aforementioned reflective layer comprises selected from In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, At least one material in the material group consisting of Cu, AuBe, AuGe, Ni, PbSn, and AuZn; the aforementioned insulating layer is selected from at least one material in the material group consisting of SiNx, SiO2, Al2O3, and TiO2, or other alternatives material; the aforementioned transparent conductive layer includes at least one material selected from the material group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide, and zinc tin oxide; the aforementioned first contact layer includes at least one material selected from At least one material from the material group consisting of GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN, and AlGaN; the aforementioned first confinement layer includes AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN, and AlGaInN At least one material in the material group; the aforementioned light-emitting layer includes at least one material in the material group consisting of AlGaInP, InGaP, GaN, AlGaN, InGaN, and AlGaInN; the aforementioned second confinement layer includes AlGaInP, AlInP, AlN, GaN , AlGaN, InGaN, and AlGaInN constitute at least one material in the material group; the aforementioned second contact layer includes a material selected from the group consisting of GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN, and AlGaN of at least one material.

上述仅为用以说明本发明概念的优选实施例，本发明的范围不限于该等优选实施例，凡依本发明概念所做的变更，皆属本发明申请专利的范围。The above are only preferred embodiments for illustrating the concept of the present invention. The scope of the present invention is not limited to these preferred embodiments. Any changes made according to the concept of the present invention are within the scope of the patent application of the present invention.

Claims (34)

1. light-emitting diode with passage of heat gluing layer comprises at least:
One high heat-radiating substrate;
One insulating barrier;
One LED lamination is formed on this insulating barrier; And
One a gluing layer with projection passage of heat between this high heat-radiating substrate and insulating barrier wherein, penetrates or the partial penetration gluing layer by projection.
2. the light-emitting diode with passage of heat gluing layer as claimed in claim 1 wherein, is contained in this high heat-radiating substrate and this and has between the gluing layer of the projection passage of heat and form one second insulating barrier.
3. the light-emitting diode with passage of heat gluing layer as claimed in claim 1 or 2, wherein, this insulating barrier and second insulating barrier are selected from least a material in SiNx, SiO2, Al2O3 and the TiO2 institute constituent material cohort.
4. the light-emitting diode with passage of heat gluing layer as claimed in claim 1 wherein, is contained in and forms a transparency conducting layer between this insulating barrier and this LED lamination.
5. the light-emitting diode with passage of heat gluing layer as claimed in claim 1 wherein, also is contained in this LED lamination top and forms a transparency conducting layer.
6. as claim 4 or 5 described light-emitting diodes with passage of heat gluing layer, wherein, this transparency conducting layer comprises at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the zinc-tin oxide institute constituent material cohort.
7. the light-emitting diode with passage of heat gluing layer as claimed in claim 1 wherein, also is contained on this gluing layer with projection passage of heat and formation one reflector between this insulating barrier.
8. the light-emitting diode with passage of heat gluing layer as claimed in claim 7, wherein, this reflector comprises at least a material that is selected from In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn and the AuZn institute constituent material cohort.
9. the light-emitting diode with passage of heat gluing layer as claimed in claim 1, wherein, this projection passage of heat can be the metal coupling passage or the semiconductor projection passage of heat, and the passage of heat comprises at least a material that is selected from In, Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, PbSn, AuZn, GaP, Si and the SiC institute constituent material cohort.
10. the light-emitting diode with passage of heat gluing layer as claimed in claim 1, wherein, this gluing layer comprises at least a material that is selected from polyimides, benzocyclobutane and the mistake fluorine cyclobutane institute constituent material cohort.
11. the light-emitting diode with passage of heat gluing layer as claimed in claim 1, wherein, this high heat-radiating substrate comprises at least a material that is selected from GaP, Si, SiC and the metal institute constituent material cohort.
12. the light-emitting diode with passage of heat gluing layer as claimed in claim 1, wherein, this LED lamination comprises:
One first contact layer;
One first bond course is formed on this first contact layer;
One luminescent layer is formed on this first bond course;
One second bond course is formed on this luminescent layer; And
One second contact layer is formed on this second bond course.
13. the light-emitting diode with passage of heat gluing layer as claimed in claim 12, wherein, this first contact layer comprises at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN and the AlGaN institute constituent material cohort.
14. the light-emitting diode with passage of heat gluing layer as claimed in claim 12, wherein, this first bond course comprises at least a material in AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN and the AlGaInN institute constituent material cohort.
15. the light-emitting diode with passage of heat gluing layer as claimed in claim 12, wherein, this luminescent layer comprises at least a material in AlGaInP, InGaP, GaN, AlGaN, InGaN and the AlGaInN institute constituent material cohort.
16. the light-emitting diode with passage of heat gluing layer as claimed in claim 12, wherein, this second bond course comprises at least a material in AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN and the AlGaInN institute constituent material cohort.
17. the light-emitting diode with passage of heat gluing layer as claimed in claim 12, wherein, this second contact layer comprises at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN and the AlGaN institute constituent material cohort.
18. the light emitting diode matrix with passage of heat gluing layer comprises at least:
One high heat-radiating substrate;
One insulating barrier,
A plurality of LED laminations are formed on this insulating barrier, and wherein, these a plurality of LED laminations that are formed on this insulating barrier are electrically connected formation one light emitting diode matrix on demand; And
One a gluing layer with projection passage of heat between this high heat-radiating substrate and insulating barrier wherein, penetrates or the partial penetration gluing layer by projection.
19. the light emitting diode matrix with passage of heat gluing layer as claimed in claim 18 wherein, is contained in this high heat-radiating substrate and this and has between the gluing layer of the projection passage of heat and form one second insulating barrier.
20. as claim 18 or 19 described light emitting diode matrixs with passage of heat gluing layer, wherein, this insulating barrier and second insulating barrier are selected from least a material in SiNx, SiO2, Al2O3 and the TiO2 institute constituent material cohort.
21. the light emitting diode matrix with passage of heat gluing layer as claimed in claim 18 wherein, is contained in and forms a transparency conducting layer between this insulating barrier and this LED lamination.
22. the light emitting diode matrix with passage of heat gluing layer as claimed in claim 18 wherein, also is contained in this LED lamination top and forms a transparency conducting layer.
23. as claim 21 or 22 described light emitting diode matrixs with passage of heat gluing layer, wherein, this transparency conducting layer comprises at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the zinc-tin oxide institute constituent material cohort.
24. the light emitting diode matrix with passage of heat gluing layer as claimed in claim 18 wherein, also is contained on this gluing layer with projection passage of heat and formation one reflector between this insulating barrier.
25. the light emitting diode matrix with passage of heat gluing layer as claimed in claim 24, wherein, this reflector comprises at least a material that is selected from In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn and the AuZn institute constituent material cohort.
26. the light emitting diode matrix with passage of heat gluing layer as claimed in claim 18, wherein, this projection passage of heat can be the metal coupling passage or the semiconductor projection passage of heat, and the passage of heat comprises at least a material that is selected from In, Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, PbSn, AuZn, GaP, Si and the SiC institute constituent material cohort.
27. the light emitting diode matrix with passage of heat gluing layer as claimed in claim 18, wherein, this gluing layer comprises at least a material that is selected from polyimides, benzocyclobutane and the mistake fluorine cyclobutane institute constituent material cohort.
28. the light emitting diode matrix with passage of heat gluing layer as claimed in claim 18, wherein, this high heat-radiating substrate comprises at least a material that is selected from GaP, Si, SiC and the metal institute constituent material cohort.
29. the light emitting diode matrix with passage of heat gluing layer as claimed in claim 18, wherein, this LED lamination comprises:
One first contact layer;
One first bond course is formed on this first contact layer;
One luminescent layer is formed on this first bond course;
One second bond course is formed on this luminescent layer; And
One second contact layer is formed on this second bond course.
30. the light emitting diode matrix with passage of heat gluing layer as claimed in claim 29, wherein, this first contact layer comprises at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN and the AlGaN institute constituent material cohort.
31. the light emitting diode matrix with passage of heat gluing layer as claimed in claim 29, wherein, this first bond course comprises at least a material in AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN and the AlGaInN institute constituent material cohort.
32. the light emitting diode matrix with passage of heat gluing layer as claimed in claim 29, wherein, this luminescent layer comprises at least a material in AlGaInP, InGaP, GaN, AlGaN, InGaN and the AlGaInN institute constituent material cohort.
33. the light emitting diode matrix with passage of heat gluing layer as claimed in claim 29, wherein, this second bond course comprises at least a material in AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN and the AlGaInN institute constituent material cohort.
34. the light emitting diode matrix with passage of heat gluing layer as claimed in claim 29, wherein, this second contact layer comprises at least a material that is selected from GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN and the AlGaN institute constituent material cohort.
CNB2004100556540A 2004-08-02 2004-08-02 Light emitting diode with thermal channel bonding layer and light emitting diode array Expired - Lifetime CN100365834C (en)

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