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CN103824866A - 一种阵列基板及其制备方法、液晶显示面板 - Google Patents

一种阵列基板及其制备方法、液晶显示面板 Download PDF

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CN103824866A
CN103824866A CN201410075645.1A CN201410075645A CN103824866A CN 103824866 A CN103824866 A CN 103824866A CN 201410075645 A CN201410075645 A CN 201410075645A CN 103824866 A CN103824866 A CN 103824866A
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insulating layer
gate
layer
patterned
organic insulating
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徐向阳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to PCT/CN2014/077594 priority patent/WO2015131443A1/zh
Priority to US14/382,963 priority patent/US20160231629A1/en
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Abstract

本发明公开了一种阵列基板及其制备方法、液晶显示面板。所述阵列基板包括玻璃基板，形成于玻璃基板上的图案化的栅极金属层，形成于栅极金属层上的栅极绝缘层，形成于栅极绝缘层上的图案化的有机绝缘层，该有机绝缘层在其与栅极金属层中的晶体管栅极对应的区域设置有开孔，以及形成于有机绝缘层上的图案化的有源层，该有源层的一部分沉积于所述有机绝缘层的开孔的两侧和开孔的内部，以及形成于有源层上的图案化的源漏极金属层。与现有技术相比，本发明提出的阵列基板的负载较小，逻辑功耗较低，使用寿命较长。此外，由于设置的有机绝缘层较厚且平坦，因此能够有效防止静电现象，并且避免金属线的爬坡断线，提高阵列基板生产良率。

Description

一种阵列基板及其制备方法、液晶显示面板
技术领域
本发明涉及图像显示技术，特别是关于一种阵列基板及其制备方法、液晶显示面板。
背景技术
使用液晶显示面板作为核心部件的显示装置已经广泛地应用于人们的日常生活和工作中。液晶显示面板的工作性能对显示装置的成像效果，例如对可视视角、明暗程度和色彩等有着显著的影响。
一个液晶显示面板通常由阵列基板、彩色滤光片基板和液晶层组成。其中，阵列基板是由多个以阵列形式排布的晶体管，以及与每一个晶体管对应配置的像素单元（pixel）组成。晶体管作为启动像素单元工作的逻辑开关元件，通过扫描线接收来自扫描驱动电路的扫描信号，通过数据线接收来自数据驱动电路的数据信号，并在扫描信号的作用下导通，从而将数据信号传输给对应的像素单元。像素单元的液晶分子在数据信号的作用下发生相应的偏转，透过一定量的光，同时外围的灰阶调节电路还对光的强度进行调节，从而完成图像显示。由此可知，液晶显示面板是被动显示，其功耗可以大致分为三个部分：背光功耗、驱动电路板功耗和面板功耗。背光功耗主要取决于LED灯的亮度和发光效率；驱动电路板功耗主要取决于信号频率，驱动电流以及线路损耗；面板功耗主要为逻辑功耗，也即驱动阵列基板上晶体管工作所需的能耗。其中，面板设计的好坏会直接影响面板功耗的大小。
当前随着显示技术的不断发展，液晶显示面板的尺寸正在不断地增大，面板中的元件和布线的数量也在成倍增加，如何降低面板功耗成为了液晶技术发展的一个难题。尤其是，如何减少因金属线彼此间的耦合容抗所引起的面板功耗损失是一个亟待解决的技术问题。
发明内容
为解决上述问题，本发明提供了一种新的功耗较低的阵列基板及其制备方法，以及相应的液晶显示面板。
所述阵列基板，其中包括：
玻璃基板；
形成于所述玻璃基板上的图案化的栅极金属层；
形成于所述栅极金属层上的栅极绝缘层；
形成于所述栅极绝缘层上的图案化的有机绝缘层，所述有机绝缘层在其与所述栅极金属层中的晶体管栅极对应的区域设置有开孔；
形成于所述有机绝缘层上的图案化的有源层，所述有源层的一部分沉积于所述有机绝缘层的开孔的两侧和开孔的内部；
形成于所述有源层上的图案化的源漏极金属层。
优选地，上述阵列基板中，所述有机绝缘层的开孔为通孔，以暴露所述栅极绝缘层中的与所述栅极金属层中的晶体管栅极对应的区域。
根据本发明的实施例，上述有机绝缘层的厚度可以是
Figure BDA0000472189610000021
根据本发明的实施例，上述有机绝缘层的材料可以是聚丙烯酸。
根据本发明的实施例，上述阵列基板，还可以包括：
形成于所述源漏极金属层上的图案化的钝化保护层；
形成于所述钝化保护层上的图案化的像素电极层。
此外，本发明还提供一种包括有上述阵列基板的液晶显示面板。
此外，本发明还提出了一种上述阵列基板的制备方法，包括以下步骤：
提供一玻璃基板；
在玻璃基板上形成图案化的栅极金属层；
在栅极金属层上形成栅极绝缘层；
在栅极绝缘层上形成图案化的有机绝缘层，且所述有机绝缘层在其与栅极金属层中的晶体管栅极对应的区域设置开孔；
在有机绝缘层上形成图案化的有源层，且使有源层的一部分沉积于有机绝缘层的开孔的两侧和开孔的内部；
在有源层上形成图案化的源漏极金属层。
优选地，可以将上述有机绝缘层的开孔设置为通孔，以暴露所述栅极绝缘层中的与所述栅极金属层中的晶体管栅极对应的区域。
根据本发明的实施例，上述制备方法还可以包括以下步骤：
在源漏极金属层上形成图案化的钝化保护层；
在钝化保护层上形成图案化的像素电极层。
优选地，上述制备方法中，可以将有机绝缘层的厚度设置为
Figure BDA0000472189610000031
Figure BDA0000472189610000032
与现有技术相比，本发明提出在制作液晶显示面板的阵列基板时，在栅极金属层上设置一层有机绝缘层（一种高透过率低介电常数的光刻胶），以增加栅极金属层与源漏极金属层之间的距离，从而降低金属线交叉处以及金属线彼此间的耦合容抗，进而减小整个阵列基板的负载，降低面板的逻辑功耗，延长使用寿命。此外，由于有机绝缘层较厚且平坦，因此还能够有效防止静电现象，并且避免金属线的爬坡断线，从而提高显示面板的生产良率，降低生产成本。本发明提出的技术方案适用于例如PSVA等各种类型的液晶显示面板。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例共同用于解释本发明，并不构成对本发明的限制。在附图中：
图1是本发明的阵列基板的一个实施例的结构剖视图；
图2是根据本发明的制备方法制作图1阵列基板过程中沉积栅极金属层的剖视图；
图3是根据本发明的制备方法制作图1阵列基板过程中沉积栅极绝缘层的剖视图；
图4是根据本发明的制备方法制作图1阵列基板过程中沉积有机绝缘层的剖视图；
图5是根据本发明的制备方法制作图1阵列基板过程中沉积有源层和源漏极金属层的剖视图；
图6是根据本发明的制备方法制作图1阵列基板过程中沉积钝化保护层的剖视图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，以下结合具体实施例和附图对本发明作进一步地详细说明。
如图1所示，是采用本发明提出的制备方法制成的一种阵列基板的示意图，该阵列基板可以是低功耗的PSVA型阵列基板，包括：
玻璃基板110；
形成于玻璃基板110上的图案化的栅极金属层120。
形成于栅极金属层120上的栅极绝缘层130；
形成于栅极绝缘层130上的图案化的有机绝缘层140，其中有机绝缘层140在其与栅极金属层120中的晶体管栅极121对应的区域设置有开孔141，以暴露栅极绝缘层130中的与栅极金属层120中的晶体管栅极121对应的区域；
形成于有机绝缘层140上的图案化的有源层150，其中有源层150的一部分沉积于有机绝缘层140的开孔141的两侧和开孔141的内部；
形成于有源层150上的图案化的源漏极金属层160；
形成于源漏极金属层160上的图案化的钝化保护层170；
形成于钝化保护层170上的图案化的像素电极层180。
如图1～图6所示，是制作上述PSVA型阵列基板的具体工艺流程，包括以下步骤：
1）提供一玻璃基板110。
2）采用溅射镀膜法（Sputtering）在玻璃基板110上沉积一层金属，例如钼、铬或铜等金属材料。该金属层的厚度可以是然后利用掩膜板通过曝光、显影、刻蚀和剥离等光刻工艺对此金属层进行图案化处理，以形成包括多个晶体管栅极121和多条栅极金属线122的栅极金属层120（参见图2）。
3）采用等离子增强化学气相沉积法（PECVD）在栅极金属层120上沉积一层绝缘材料，例如氮化硅，作为栅极绝缘层130，用以保护栅极金属层120（参见图3）。该栅极绝缘层130的厚度可以是
Figure BDA0000472189610000042
4）在栅极绝缘层130上涂布一层高透过率低介电常数的有机绝缘材料，例如聚丙烯酸。该涂层的厚度优选为
Figure BDA0000472189610000043
用以增加栅极金属层120与源漏极金属层160之间的距离，从而降低金属线彼此间（例如栅极金属线与漏极金属线之间，栅极金属线与源极金属线之间）的耦合容抗。然后利用掩膜板通过曝光、显影等工艺对此涂层进行图案化处理，以形成有机绝缘层140。该有机绝缘层140中在与栅极金属层120的晶体管栅极121对应的区域具有开孔141。开孔141一般为通孔，用以暴露栅极绝缘层130中的与栅极金属层120的晶体管栅极121对应的区域（参见图4）。
5）采用等离子增强化学气相沉积法（PECVD）在有机绝缘层140上沉积氢化非晶硅a-Si:H以及用于制作漏极金属线和源极金属线的金属材料，其厚度可以是
Figure BDA0000472189610000051
然后利用灰阶掩膜板通过曝光、显影、1次S/D湿法刻蚀、1次a-Si干法刻蚀和沟道光刻胶灰化、2次沟道S/D湿法刻蚀、沟道N+干刻、剥离等构图工艺进行图案化处理，以形成包括多个晶体管沟道的有源层150，以及包括多条漏极金属线和源极金属线的源漏极金属层160。其中，源漏极金属层160沉积在有源层150上，有源层150的一部分沉积在有机绝缘层140的开孔141的两侧，以及在开孔141的内部直接沉积在栅极绝缘层130上（参见图5），以减小有源层150中的晶体管沟道151与栅极金属层120中所对应的栅极121之间的距离，以确保驱动晶体管正常工作。
6）采用等离子增强化学气相沉积法（PECVD）在源漏极金属层160上沉积一层绝缘材料，例如氮化硅SiNx，作为钝化保护层170，用以保护源漏极金属层160。该钝化保护层170的厚度可以是
Figure BDA0000472189610000053
然后利用掩膜板通过曝光、显影、刻蚀和剥离等光刻工艺对此钝化保护层170进行图案化处理，以使该钝化保护层170中具有贯通的开孔171，用以暴露源漏极金属层160中的漏极金属线和/或源极金属线的一部分（参见图6）。
7）采用溅射镀膜法（Sputtering）在钝化保护层170上沉积一层透明导电材料，例如ITO或者IZO，其厚度可以是
Figure BDA0000472189610000052
然后利用掩膜板通过曝光、显影、刻蚀和剥离等光刻工艺进行图案化处理，以形成图案化的像素电极层180。该像素电极层180的一部分沉积在钝化保护层170的开孔171的两侧，以及在开孔171的内部直接沉积在源漏极金属层160中的漏极金属线和/或源极金属线上（参见图1）。
本发明通过上述方法，在阵列基板的栅极金属层上设置一层有机绝缘层（一种高透过率低介电常数的光刻胶），以增加栅极金属层与源漏极金属层之间的距离，从而降低金属线交叉处及金属线彼此间的耦合容抗，有效减小整个阵列基板的负载，降低阵列基板逻辑功耗，延长使用寿命。此外，由于有机绝缘层较厚且平坦，因此还能够有效防止静电现象，并且避免金属线的爬坡断线，从而提高面板生产良率，降低生产成本。
当然，本发明提出的阵列基板及其制备方法，远不限于上述实施例，还可以适用于其他类型的阵列基板。
此外，本发明还提出了一种包括上述阵列基板的液晶显示面板。
以上所述，仅为本发明较佳的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉该技术的人员在本发明所揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应该以权利要求的保护范围为准。

Claims (10)

1.一种阵列基板，其特征在于，包括：
玻璃基板；
形成于所述玻璃基板上的图案化的栅极金属层；
形成于所述栅极金属层上的栅极绝缘层；
形成于所述栅极绝缘层上的图案化的有机绝缘层，所述有机绝缘层在其与所述栅极金属层中的晶体管栅极对应的区域设置有开孔；
形成于所述有机绝缘层上的图案化的有源层，所述有源层的一部分沉积于所述有机绝缘层的开孔的两侧和开孔的内部；
形成于所述有源层上的图案化的源漏极金属层。
2.如权利要求1所述的阵列基板，其特征在于：
所述有机绝缘层的开孔为通孔，以暴露所述栅极绝缘层中的与所述栅极金属层中的晶体管栅极对应的区域。
3.如权利要求1或2所述的阵列基板，其特征在于：
所述有机绝缘层的厚度为
Figure FDA0000472189600000011
4.如权利要求1或2所述的阵列基板，其特征在于：
所述有机绝缘层的材料为聚丙烯酸。
5.如权利要求1或2所述的阵列基板，其特征在于，还包括：
形成于所述源漏极金属层上的图案化的钝化保护层；
形成于所述钝化保护层上的图案化的像素电极层。
6.一种液晶显示面板，其特征在于，包括如权利要求1～5任意一项所述的阵列基板。
7.一种阵列基板的制备方法，包括以下步骤：
提供一玻璃基板；
在玻璃基板上形成图案化的栅极金属层；
在栅极金属层上形成栅极绝缘层；
在栅极绝缘层上形成图案化的有机绝缘层，且所述有机绝缘层在其与栅极金属层中的晶体管栅极对应的区域设置开孔；
在有机绝缘层上形成图案化的有源层，且使有源层的一部分沉积于有机绝缘层的开孔的两侧和开孔的内部；
在有源层上形成图案化的源漏极金属层。
8.如权利要求7所述的制备方法，其特征在于：
将所述有机绝缘层的开孔设置为通孔，以暴露所述栅极绝缘层中的与所述栅极金属层中的晶体管栅极对应的区域。
9.如权利要求7或8所述的制备方法，其特征在于，还包括以下步骤：
在源漏极金属层上形成图案化的钝化保护层；
在钝化保护层上形成图案化的像素电极层。
10.如权利要求7或8所述的制备方法，其特征在于：
将有机绝缘层的厚度设置为
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Application publication date: 20140528