Summary of the invention
The object of the invention is to; input response speed for above-mentioned voltage mode control DC-DC transducer is slow; and control loop is vulnerable to the problem of the interference of electric current; propose a kind of digital-to-analogue and mix the LED drive circuit of light modulation; this circuit can be realized constant turn-off time control model, and has digital-to-analogue mixing dimming function.At power switch pipe Q
1under turn-on condition, when the first resistance R
1when both end voltage reaches the threshold voltage of comparator of setting, the peak current setting detected, Q
1turn-off.In addition, the turn-off time of system is constant.Whole circuit structure is simple, and it is convenient to control; Sluggish control response speed is fast; Loop compensation is succinct; The stability of a system is good.
For achieving the above object, the present invention adopts following technical scheme to be solved:
Digital-to-analogue is mixed a LED drive circuit for light modulation, comprises as lower unit:
Dimming control unit, comprises analog light-adjusting circuit and digital light-adjusting circuit, and wherein, described analog light-adjusting circuit is used for receiving driving voltage V
aDJ1, and by regulating driving voltage V
aDJ1magnitude of voltage and export peak current detection threshold voltage V
cST1, and will be input to peak current detection sampling unit; Described digital light-adjusting circuit is used for receiving enable signal V
eN, and at enable signal V
eNcontrol under, to peak current detection sampling unit and constant turn-off time control unit output enable signal V
eN1, simultaneously to constant turn-off time control unit output enable signal V
eN2;
Peak current detection sampling unit, the peak current detection threshold voltage V sending for receiving the reception analog light-adjusting circuit of dimming control unit
cST1and the output enable signal V of digital light-adjusting circuit transmission
eN1; And at enable signal V
eN1control under, by input voltage V
iNwith by input voltage V
iNthrough pressure drop V
sNSthe voltage V obtaining
1with peak value detection threshold voltage V
cST1compare, to realize the detection of peak current, and by output signal V
3input constant turn-off time control unit;
Constant turn-off time control unit: the enable signal V sending for receiving dimming control unit digital light-adjusting circuit
eN1with enable signal V
eN2, receive the output signal V that peak current detection sampling unit sends simultaneously
3; And at enable signal V
eN1with enable signal V
eN2under control, in the time peak current being detected, regulate input voltage V
aDJ2, obtain an output voltage V
2, and by output voltage V
2be delivered to power switch pipe Q
1;
Power switch pipe Q
1: the output voltage V sending for receiving constant turn-off time control unit
2, and according to output voltage V
2produce a constant turn-off time T
oFF;
DC power supply first capacitor C in parallel of input
1after obtain input voltage V
iN, the first resistance R
1the input voltage V at two ends
iNwith voltage V
1be connected to peak current detection unit; The output voltage V of constant turn-off time control unit output
2be connected to a driving Driver, for power ratio control switching tube Q
1turn-on and turn-off; Power switch pipe Q
1with Schottky diode D
1with the second capacitor C
2parallel connection, and with the first inductance L
1series connection.
Further, described dimming control unit comprises analog light-adjusting circuit and digital light-adjusting circuit.
Further, described analog light-adjusting circuit comprises that amplifier, NMOS manage M
101, the second resistance R
2, the 3rd resistance R
3with current source I
s1; Described digital light-adjusting circuit 12 comprises that the first Schmidt trigger and the second Schmidt trigger, inverter, PMOS manage M
102, PMOS manages M
104, NMOS manages M
103, NMOS manages M
105with the 3rd capacitor C
3; Wherein:
Described amplifier, its in-phase input end is connected to driving voltage V
aDJ1, and by the 3rd resistance R
3ground connection; Its end of oppisite phase is by the second resistance R
2ground connection; Its output is connected to NMOS pipe M
101grid; NMOS manages M
101drain electrode be connected to the input threshold voltage V of peak current detection sampling unit
cST1, its source class is by the second resistance R
2ground connection; Current source I
s1input access internal electric source V
dD, its output is by the 3rd resistance R
3receive ground, and access V
aDJ1;
Described the first Schmidt trigger, its input is connected on NMOS pipe M
103drain electrode, be connected on the 3rd capacitor C simultaneously
3positive pole, its output is connected on the input of inverter, accesses enable signal V simultaneously
eN1; Its power end meets respectively internal electric source V
dDand ground;
Described the second Schmidt trigger, its input is connected on the output of inverter, connects PMOS pipe M simultaneously
104with NMOS pipe M
105drain electrode; Its output is connected to the enable signal V of an input of NAND gate in constant turn-off time control unit
eN2on; Its power end is connected on respectively internal electric source V
dDand on the ground;
Described inverter, its input is connected on the output of Schmidt trigger, and its output is connected to PMOS pipe M
104grid on; PMOS manages M
102, its source electrode connects internal electric source V
dD, its grid directly arrives ground; PMOS manages M
104, its source electrode access internal electric source V
dD; NMOS manages M
103, its grid connection enables input signal V
eN, its source class ground connection; NMOS manages M
105, its source class ground connection, its grid access enables input signal V
eN; The 3rd capacitor C
3, its minus earth.
Further, described peak current detection sampling unit, comprises inverter, current source I
s2, the 4th resistance R
4, the 5th resistance R
5, the 6th resistance R
6, the 7th resistance R
7, high voltage PMOS pipe M
203, high voltage PMOS pipe M
205, high pressure NMOS pipe M
204, high pressure NMOS pipe M
206, NMOS manages M
201, NMOS manages M
202, NMOS manages M
207, NMOS manages M
208, NMOS manages M
209, NMOS manages M
210, NMOS manages M
211, NMOS manages M
212, NMOS manages M
215, NMOS manages M
220, NMOS manages M
221, NMOS manages M
223, NMOS manages M
224, NMOS manages M
226, PMOS manages M
213, PMOS manages M
214, PMOS manages M
216, PMOS manages M
217, PMOS manages M
218, PMOS manages M
219, PMOS manages M
222with PMOS pipe M
225; Wherein:
Described inverter, its input connection enables input signal V
eN1, its output termination NMOS pipe M
207;
Described current source I
s2, its input termination internal electric source V
dD, its output is connected on NMOS pipe M
207and M
208drain electrode on, be connected on NMOS pipe M simultaneously
208and M
209grid on; Described NMOS pipe M
208, M
209, M
210, M
211, M
212structure current mirror in a row, NMOS manages M
208, M
209, M
210, M
211, M
212grid be all connected to NMOS pipe M
208grid on, source electrode is ground connection all;
Described NMOS pipe M
209drain electrode be connected on the NMOS pipe M of composition differential pair
201, M
202source electrode on; Wherein NMOS pipe M
210drain electrode be connected on high pressure NMOS pipe M
204source electrode on; NMOS manages M
211drain electrode be connected on high pressure NMOS pipe M
206source electrode on, NMOS manages M
212drain electrode be connected on PMOS pipe M
213drain electrode on;
Described NMOS pipe M
201and M
202form differential pair, their drain electrode is respectively by the 6th resistance R
6with the 7th resistance R
7be connected on input voltage V
iNupper, their grid is respectively by the 4th resistance R
4with the 5th resistance R
5be connected to input voltage V
1and V
iNon;
Described high voltage PMOS pipe M
203, M
205with NMOS pipe M
204, M
206drain electrode high-voltage tube, wherein, high voltage PMOS pipe M
203, M
205source electrode be connected on respectively differential pair NMOS pipe M
201, M
202drain electrode on, their drain electrode is connected to NMOS pipe M
204, M
206drain electrode on, their grid all connects input voltage V
b1; High pressure NMOS pipe M
204, M
206grid all connect input voltage V
b2, their source class is connected to the NMOS pipe M of composition differential pair
219, M
218grid on;
Described PMOS pipe M
213, M
216form current mirror, their source electrode is all received internal electric source V
dD, PMOS manages M
216drain electrode be connected to the PMOS pipe M of composition differential pair
218, M
219source electrode; PMOS manages M
217source electrode connects internal electric source V
dD, grid connects enable signal V
eN1, drain electrode connects PMOS pipe M
213drain electrode;
Described PMOS pipe M
214and M
222form current mirror, their source electrode meets internal electric source V
dD, wherein PMOS pipe M
214drain electrode meet NMOS pipe M
215drain electrode, PMOS manages M
222drain electrode meet NMOS pipe M
223drain electrode; Described NMOS pipe M
215and M
220also form current mirror, all ground connection of its source class, wherein NMOS pipe M
220drain electrode be connected on the PMOS pipe M of composition differential pair
218drain electrode on; Described NMOS pipe M
221and M
223also form current mirror, all ground connection of their source electrode, NMOS manages M
221drain electrode be connected on the PMOS pipe M of composition differential pair
219drain electrode on;
Described NMOS pipe M
224, its grid connects enable signal V
eN1, for controlling its on off state, its drain electrode is connected on NMOS pipe M
223drain electrode on, source ground; Described PMOS pipe M
225with NMOS pipe M
226form inverter, the input of this inverter is connected on NMOS pipe M
223drain electrode on, its output termination output signal V
3, wherein PMOS pipe M
225source electrode meet internal electric source V
dD, NMOS manages M
226source ground.
Further, described constant turn-off time control unit, comprises amplifier, comparator, rest-set flip-flop, inverter, inverter, NAND gate, the 4th capacitor C
4, the 8th resistance R
8, PMOS manages M
301, PMOS manages M
302, PMOS manages M
303with PMOS pipe M
304, NMOS manages M
305with NMOS pipe M
306; Wherein:
Described amplifier, its in-phase input end connects input voltage V
aDJ2, reverse input end is by the 8th resistance R
8ground connection, its output termination NMOS pipe M
305grid; Described comparator, its in-phase input end connects reference voltage V
rEF, its anti-phase termination PMOS pipe M
303drain electrode, the reset terminal R of its output termination rest-set flip-flop; Described rest-set flip-flop is made up of two NAND gate, and it is put number end S and is connected on the output of inverter, and its output is connected on the input of inverter; Described inverter, the output signal V of its input termination peak current detection sampling unit
3, described inverter, in an input of its output termination NAND gate; Another input termination enable signal V of described NAND gate
eN2, its output termination output voltage V
2;
Described PMOS pipe M
301, M
302, M
303and M
304form current mirror, wherein, PMOS manages M
301and M
302source electrode be connected on internal electric source V
dDupper, and drain electrode is connected on respectively PMOS pipe M
304and M
303source electrode on; By getting identical pipe sizing, obtain current relationship and be: I
d6=i
d7=i
d8=i
d9;
Described PMOS pipe M
304drain electrode connect NMOS pipe M
305drain electrode, PMOS manages M
303drain electrode by the 4th capacitor C
4ground connection; Described NMOS pipe M
305source electrode by the 8th resistance R
8ground connection, NMOS manages M
306grid meet the output signal V of peak current detection sampling unit
3, its drain electrode connects the inverting input of comparator, source ground.
Further, described peak current detection sampling unit comprises inverter, the 4th resistance R
4, the 5th resistance R
5, PMOS manages M
201, PMOS manages M
202, PMOS manages M
205, PMOS manages M
206, PMOS manages M
209, PMOS manages M
212, PMOS manages M
213, NMOS manages M
203, NMOS manages M
204, NMOS manages M
207, NMOS manages M
208, NMOS manages M
210, NMOS manages M
211, NMOS manages M
214with NMOS pipe M
215; Wherein:
Described inverter, its input connects PMOS pipe M
213drain electrode, output connects in constant turn-off time control unit NMOS pipe M
306grid, for controlling its switch; Described PMOS pipe M
212and M
213form current mirror, their source electrode all connects internal electric source V
dD, PMOS manages M
212drain electrode connect NMOS pipe M
214drain electrode, PMOS manages M
213drain electrode connect NMOS pipe M
215drain electrode;
Described NMOS pipe M
215, its grid connects high pressure NMOS pipe M
210source class, its source ground; NMOS manages M
214, M
211, M
208grid be all connected on NMOS pipe M
207grid on, all ground connection of their source electrode, wherein NMOS pipe M
211drain electrode meet high pressure NMOS pipe M
210source electrode, NMOS manages M
208drain electrode connect high pressure NMOS pipe M
206source electrode, NMOS manages M
207drain electrode connect high pressure NMOS pipe M
205source electrode; High pressure NMOS pipe M
210grid connect internal electric source V
dD, its drain electrode connects high voltage PMOS pipe M
209drain electrode; Described PMOS pipe M
209source electrode connect input voltage V
iN, its grid connects PMOS pipe M
202with high pressure NMOS pipe M
204drain electrode;
Described PMOS pipe M
201and M
202form current mirror, their source electrode connects input voltage V
iN, wherein PMOS pipe M
201, M
202drain electrode connect respectively NMOS pipe M
203, M
204drain electrode; Described high pressure NMOS pipe M
204, its grid connects the output threshold voltage V of analog light-adjusting circuit in dimming control unit
cST, and by the 5th resistance R
5connect input voltage V
iN, its source electrode and NMOS pipe M
203source electrode be all connected to high pressure NMOS pipe M
206drain electrode; Described NMOS pipe M
203, its grid is by the 4th resistance R
4connect input voltage V
1; Described high pressure NMOS pipe M
205and M
206form current mirror, wherein, NMOS manages M
205drain electrode connect current source I
s2.
Further, described constant turn-off time control unit comprises comparator, rest-set flip-flop, inverter and inverter, NAND gate, the 4th capacitor C
4, the 8th resistance R
8with NMOS pipe M
301; Wherein:
Described comparator, its in-phase input end connects reference voltage V
rEF, its inverting input connects NMOS pipe M
301drain electrode, and by the 8th resistance R
8be connected to output voltage V
aDJ2upper or by the 4th capacitor C
4ground connection, the reset terminal R of its output termination rest-set flip-flop; Described rest-set flip-flop is made up of two NAND gate, and it is put number end S and is connected on the output of inverter, and its output is connected on the input of inverter; Described inverter, the output signal V of its input termination peak current detection sampling unit
3; Described inverter, in an input of its output termination NAND gate; Another input termination enable signal V of described NAND gate
eN2, its output termination output voltage V
2; Described NMOS pipe M
301, its grid connects the output signal V of peak current detection sampling unit
3, its source ground.
The present invention compared with prior art has the following advantages:
1, the present invention is by comparing the first resistance R
1the threshold voltage of both end voltage and comparator triggers the shutoff of power switch pipe, does not need error amplifier and feedback network, therefore, compared with traditional voltage mode control, has response speed faster.
2, constant turn-off time control model LED drive circuit of the present invention is without external compensation network, and loop compensation is succinct, is easy to realize, and it is convenient to control; And switching frequency is only with V
iNincrease and increase, the stability of a system is good, has effectively avoided control loop in traditional system to be vulnerable to the problem of current interference.
Embodiment
Embodiment 1:
With reference to Fig. 2, Fig. 3, digital-to-analogue of the present invention is mixed the LED drive circuit of light modulation, comprises dimming control unit 1, peak current detection sampling unit 2 and constant turn-off time control unit 3.
Described dimming control unit 1, comprises analog light-adjusting circuit 11 and digital light-adjusting circuit 12, has two input a, b and three output c, d, e; Wherein, first input end a and the second input b input driving voltage V of connecting analog light adjusting circuit 11 respectively
aDJ1enable control signal V with the input of digital light-adjusting circuit 12
eN, dimming control unit 1 is by changing V
aDJ1and V
eNsimulate respectively light modulation and digital dimming; The first output c connects the enable signal V of the output of the second Schmidt trigger in digital light-adjusting circuit 12
eN2; The second output d connects the enable signal V of the first Schmidt trigger output in digital light-adjusting circuit 12
eN1; Current peak detection threshold V in the 3rd output e connecting analog light adjusting circuit 11
cST1, it is to pass through V
aDJ1change change.
Described peak current detection sampling unit 2, is provided with four input f, g, j, k and an output h; Wherein, the output current peak threshold voltage V of analog light-adjusting circuit 11 in first input end f and dimming control unit 1
cST1connect; The enable signal V of digital light-adjusting circuit 12 in the second input g and dimming control unit 1
eN1connect, for realizing the control of internal components operating state; The 3rd input j and four-input terminal k respectively with the first resistance R
1output V
1, circuit input V
iNconnect, for by the first resistance R
1on pressure drop V
sNSwith peak current detection threshold value V
cSTcompare the detection that realizes peak current; Output h is connected with the input in constant turn-off time control unit 3.
Described constant turn-off time control unit 3, is provided with four input m, n, o, p and an output q; Wherein, the output signal V in first input end m and peak current detection sampling unit 2
3connect; The second input n and the 3rd input o respectively with dimming control unit 1 in the enable signal V of output of digital light-adjusting circuit
eN1, V
eN2connect, control for unlatching and the shutoff of internal components; The driving voltage V of four-input terminal p and amplifier
aDJ2connect, for regulating the 4th capacitor C
4charge and discharge, thereby realize PMOS pipe Q
1the control of turn-off time; Output q and output voltage V
2connect.
DC power supply first capacitor C in parallel of input
1after obtain input voltage V
iN, the first resistance R
1the input voltage V at two ends
iNwith voltage V
1be connected to peak current detection unit 2; The output voltage V that constant turn-off time control unit 3 is exported
2be connected to a driving Driver, for power ratio control switching tube Q
1turn-on and turn-off; Power switch pipe Q
1with Schottky diode D
1with the second capacitor C
2parallel connection, and with the first inductance L
1series connection.
As power switch pipe Q
1when pipe conducting, Schottky diode D
1in reverse-biased, DC power supply is to the first inductance L
1charging, inductive current is linear to be increased, until to a certain degree, the electric current on LED is only provided by DC power supply, now DC power supply starts the second capacitor C
2charging, in the time peak current being detected, power switch pipe Q
1turn-off; Then due to the first inductance L
1in electric current can not suddenly change, it can produce and change contrary induced electromotive force with inductive current and stop reducing of inductive current, and makes diode D
1afterflow is carried out in conducting.This circuit of having applied just BUCK type DC-DC converter is opened up benefit structural principle, finally makes output voltage V
oUTstable, thus make to flow through the current stabilization on LED.
What the high voltage PMOS of the following stated and high pressure NMOS pipe were generally used bears pressure drop between 5V to 80V.
With reference to Fig. 3, dimming control unit 1 comprises analog light-adjusting circuit 11 and digital light-adjusting circuit 12.Wherein, analog light-adjusting circuit 11 comprises that amplifier 101, NMOS manage M
101, the second resistance R
2, the 3rd resistance R
3with current source I
s1; Digital light-adjusting circuit 12 comprises that the first Schmidt trigger 102 and the second Schmidt trigger 104, inverter 103, PMOS manage M
102, PMOS manages M
104, NMOS manages M
103, NMOS manages M
105with the 3rd capacitor C
3.Wherein:
Described amplifier 101, its in-phase input end is connected to driving voltage V
aDJ1, and by the 3rd resistance R
3ground connection; Its end of oppisite phase is by the second resistance R
2ground connection; Its output is connected to NMOS pipe M
101grid; NMOS manages M
101drain electrode be connected to the input threshold voltage V of peak current detection sampling unit 2
cST1, its source class is by the second resistance R
2ground connection; Current source I
s1input access internal electric source V
dD, its output is by the 3rd resistance R
3receive ground, and access V
aDJ1; Due to R
2=5R
5, therefore,
Wherein, V
iN-V
cST=V
cST1; V
cSTit is the 5th resistance R
5on pressure drop; V
cST1for peak current detection threshold value.
Described the first Schmidt trigger 102, its input is connected on NMOS pipe M
103drain electrode, be connected on the 3rd capacitor C simultaneously
3positive pole, its output is connected on the input of inverter 103, accesses enable signal V simultaneously
eN1; Its power end meets respectively internal electric source V
dDand ground.
Described the second Schmidt trigger 104, its input is connected on the output of inverter 103, connects PMOS pipe M simultaneously
104with NMOS pipe M
105drain electrode; Its output is connected to the enable signal V of an input of NAND gate 306 in constant turn-off time control unit 3
eN2on; Its power end is connected on respectively internal electric source V
dDand on the ground.
Described inverter 103, its input is connected on the output of Schmidt trigger 102, and its output is connected to PMOS pipe M
104grid on; PMOS manages M
102, its source electrode connects internal electric source V
dD, its grid directly arrives ground; PMOS manages M
104, its source electrode access internal electric source V
dD; NMOS manages M
103, its grid connection enables input signal V
eN, its source class ground connection; NMOS manages M
105, its source class ground connection, its grid access enables input signal V
eN; The 3rd capacitor C
3, its minus earth.
With reference to figure 4, the peak current detection sampling unit 2 of the present embodiment, comprises inverter 201, current source I
s2, the 4th resistance R
4, the 5th resistance R
5, the 6th resistance R
6, the 7th resistance R
7, high voltage PMOS pipe M
203, high voltage PMOS pipe M
205, high pressure NMOS pipe M
204, high pressure NMOS pipe M
206, NMOS manages M
201, NMOS manages M
202, NMOS manages M
207, NMOS manages M
208, NMOS manages M
209, NMOS manages M
210, NMOS manages M
211, NMOS manages M
212, NMOS manages M
215, NMOS manages M
220, NMOS manages M
221, NMOS manages M
223, NMOS manages M
224, NMOS manages M
226, PMOS manages M
213, PMOS manages M
214, PMOS manages M
216, PMOS manages M
217, PMOS manages M
218, PMOS manages M
219, PMOS manages M
222with PMOS pipe M
225.Wherein:
Described inverter 201, its input connection enables input signal V
eN1, its output termination NMOS pipe M
207;
Described current source I
s2, its input termination internal electric source V
dD, its output is connected on NMOS pipe M
207and M
208drain electrode on, be connected on NMOS pipe M simultaneously
208and M
209grid on; Described NMOS pipe M
208, M
209, M
210, M
211, M
212structure current mirror in a row, NMOS manages M
208, M
209, M
210, M
211, M
212grid be all connected to NMOS pipe M
208grid on, source electrode is ground connection all; NMOS manages M
208, M
209, M
210, M
211, M
212the size of upper current flowing is calculated according to each NMOS pipe size:
Described NMOS pipe M
209drain electrode be connected on the NMOS pipe M of composition differential pair
201, M
202source electrode on; Wherein NMOS pipe M
210drain electrode be connected on high pressure NMOS pipe M
204source electrode on; NMOS manages M
211drain electrode be connected on high pressure NMOS pipe M
206source electrode on, NMOS manages M
212drain electrode be connected on PMOS pipe M
213drain electrode on.
Described NMOS pipe M
201and M
202form differential pair, their drain electrode is respectively by the 6th resistance R
6with the 7th resistance R
7be connected on input voltage V
iNupper, their grid is respectively by the 4th resistance R
4with the 5th resistance R
5be connected to input voltage V
1and V
iNon.
Described high voltage PMOS pipe M
203, M
205with NMOS pipe M
204, M
206drain electrode high-voltage tube, wherein, high voltage PMOS pipe M
203, M
205source electrode be connected on respectively differential pair NMOS pipe M
201, M
202drain electrode on, their drain electrode is connected to NMOS pipe M
204, M
206drain electrode on, their grid all connects input voltage V
b1; High pressure NMOS pipe M
204, M
206grid all connect input voltage V
b2, their source class is connected to the NMOS pipe M of composition differential pair
219, M
218grid on, the input of serving as this differential pair.
Described PMOS pipe M
213, M
216form current mirror, their source electrode is all received internal electric source V
dD, PMOS manages M
216drain electrode be connected to the PMOS pipe M of composition differential pair
218, M
219source electrode; PMOS manages M
217source electrode connects internal electric source V
dD, grid connects enable signal V
eN1, drain electrode connects PMOS pipe M
213drain electrode.
Described PMOS pipe M
214and M
222form current mirror, their source electrode meets internal electric source V
dD, wherein PMOS pipe M
214drain electrode meet NMOS pipe M
215drain electrode, PMOS manages M
222drain electrode meet NMOS pipe M
223drain electrode; Described NMOS pipe M
215and M
220also form current mirror, all ground connection of its source class, wherein NMOS pipe M
220drain electrode be connected on the PMOS pipe M of composition differential pair
218drain electrode on; Described NMOS pipe M
221and M
223also form current mirror, all ground connection of their source electrode, NMOS manages M
221drain electrode be connected on the PMOS pipe M of composition differential pair
219drain electrode on.
Described NMOS pipe M
224, its grid connects enable signal V
eN1, for controlling its on off state, its drain electrode is connected on NMOS pipe M
223drain electrode on, source ground; Described PMOS pipe M
225with NMOS pipe M
226form inverter, the input of this inverter is connected on NMOS pipe M
223drain electrode on, its output termination output signal V
3, wherein PMOS pipe M
225source electrode meet internal electric source V
dD, NMOS manages M
226source ground.
With reference to figure 5, the constant turn-off time control unit 3 of the present embodiment, comprises amplifier 301, comparator 302, rest-set flip-flop 303, inverter 304, inverter 305, NAND gate 306, the 4th capacitor C
4, the 8th resistance R
8, PMOS manages M
301, PMOS manages M
302, PMOS manages M
303with PMOS pipe M
304, NMOS manages M
305with NMOS pipe M
306.Wherein:
Described amplifier 301, its in-phase input end connects input voltage V
aDJ2, reverse input end is by the 8th resistance R
8ground connection, its output termination NMOS pipe M
305grid; Described comparator 302, its in-phase input end connects reference voltage V
rEF, its anti-phase termination PMOS pipe M
303drain electrode, the reset terminal R of its output termination rest-set flip-flop; Described rest-set flip-flop is made up of two NAND gate, and it is put number end S and is connected on the output of inverter 304, and its output is connected on the input of inverter 305; Described inverter 304, the output signal V of its input termination peak current detection sampling unit 2
3, described inverter 305, in an input of its output termination NAND gate 306; Another input termination enable signal V of described NAND gate 306
eN2, its output termination output voltage V
2.
Described PMOS pipe M
301, M
302, M
303and M
304form current mirror, wherein, PMOS manages M
301and M
302source electrode be connected on internal electric source V
dDupper, and drain electrode is connected on respectively PMOS pipe M
304and M
303source electrode on; By getting identical pipe sizing, obtain current relationship and be: I
d6=i
d7=i
d8=i
d9.
Described PMOS pipe M
304drain electrode connect NMOS pipe M
305drain electrode, PMOS manages M
303drain electrode by the 4th capacitor C
4ground connection; Described NMOS pipe M
305source electrode by the 8th resistance R
8ground connection, NMOS manages M
306grid meet the output signal V of peak current detection sampling unit 2
3, its drain electrode connects the inverting input of comparator 302, source ground.
The LED drive circuit of the present embodiment, its turn-off time T
oFFconstant, mainly by the 8th resistance R
8, the 4th capacitor C
4, a constant output voltage V
aDJ2regulate in advance.T
oFFinitial time, the 4th capacitor C
4on voltage be zero, current mirror will provide electric charge to electric capacity subsequently, electric capacity start charging, charge constant is by R
8and C
4determine.When the 4th capacitor C
4voltage (the V at two ends
cOFF) charge to and reference voltage V
rEFwhile equating, the turn-off time finishes, capacitor discharge to zero.Power switch pipe Q
1turn-off time T
oFFcomputing formula be:
In addition, this circuit is subject to the control of peak current detection sampling unit 2, when the first resistance R
1when peak current detected, system ON time T
oNfinish turn-off time T
oFFstart.Once can know and peak current be detected, output signal V by analysis
3for high level, by this output signal V
3be connected to the NMOS pipe M in turn-off time control circuit
306grid, guarantee at T
oFFthe initial time of time period, the 4th capacitor C
4on electric charge be zero.
Embodiment 2:
Identical with embodiment 1 of the dimming control unit 1 of the present embodiment and constant turn-off time control unit 3.
With reference to Fig. 6, the peak current detection sampling unit 2 of the present embodiment comprises inverter 201, the 4th resistance R
4, the 5th resistance R
5, PMOS manages M
201, PMOS manages M
202, PMOS manages M
205, PMOS manages M
206, PMOS manages M
209, PMOS manages M
212, PMOS manages M
213, NMOS manages M
203, NMOS manages M
204, NMOS manages M
207, NMOS manages M
208, NMOS manages M
210, NMOS manages M
211, NMOS manages M
214with NMOS pipe M
215.Wherein:
Described inverter 201, its input connects PMOS pipe M
213drain electrode, output connects in constant turn-off time control unit 3 NMOS pipe M
306grid, for controlling its switch.Described PMOS pipe M
212and M
213form current mirror, their source electrode all connects internal electric source V
dD, PMOS manages M
212drain electrode connect NMOS pipe M
214drain electrode, PMOS manages M
213drain electrode connect NMOS pipe M
215drain electrode.
Described NMOS pipe M
215, its grid connects high pressure NMOS pipe M
210source class, its source ground; NMOS manages M
214, M
211, M
208grid be all connected on NMOS pipe M
207grid on, all ground connection of their source electrode, wherein NMOS pipe M
211drain electrode meet high pressure NMOS pipe M
210source electrode, NMOS manages M
208drain electrode connect high pressure NMOS pipe M
206source electrode, NMOS manages M
207drain electrode connect high pressure NMOS pipe M
205source electrode; High pressure NMOS pipe M
210grid connect internal electric source V
dD, its drain electrode connects high voltage PMOS pipe M
209drain electrode; Described PMOS pipe M
209source electrode connect input voltage V
iN, its grid connects PMOS pipe M
202with high pressure NMOS pipe M
204drain electrode.
Described PMOS pipe M
201and M
202form current mirror, their source electrode connects input voltage V
iN, wherein PMOS pipe M
201, M
202drain electrode connect respectively NMOS pipe M
203, M
204drain electrode; Described high pressure NMOS pipe M
204, its grid connects the output threshold voltage V of analog light-adjusting circuit in dimming control unit 1
cST, and by the 5th resistance R
5connect input voltage V
iN, its source electrode and NMOS pipe M
203source electrode be all connected to high pressure NMOS pipe M
206drain electrode; Described NMOS pipe M
203, its grid is by the 4th resistance R
4connect input voltage V
1; Described high pressure NMOS pipe M
205and M
206form current mirror, wherein NMOS pipe M
205drain electrode connect current source I
s2.
Its current relationship is:
Wherein, I
s2for current source current, I
d10for high pressure NMOS pipe M
206drain current, the breadth length ratio that W/L is metal-oxide-semiconductor.
In the present embodiment, utilize the first resistance R
1the differential voltage signal of upper generation detects.By by the first resistance R
1on pressure drop V
sNSwith current peak detection threshold voltage V
cSTcompare to realize the detection of peak current.The voltage of comparator anode input is V
iN-V
cST, the voltage of negative terminal input is V
iN-V
sNS.Once peak current be detected, i.e. V
sNSbe greater than V
cST, Q
1turn-off, ON time finishes, now comparator output high level.
V
cSTvalue be the input voltage V by the amplifier in-phase end in dimming control unit 1
aDJ1voltage decision, amplifier adopts degenerative connected mode, due to R
2=5R
5therefore switch NMOS manages M
101on the electric current that flows through can be expressed as:
Therefore, peak current detection threshold value V
cSTbe expressed as:
In addition, this circuit also provides two kinds to regulate detection threshold voltage V
cSTmethod, be all by change V
aDJ1magnitude of voltage is realized.
1, V
aDJ1disconnect, directly by reference voltage V
rEFbe provided as driving voltage.
The V of 0~1.20V is directly provided
aDJ1voltage is realized, in this way, and the V setting
cSTvalue between 0~240mV, change.
2, hold in the same way contact resistance R between ground in amplifier
2realize electric current I
s1can flow through resistance R
2thereby, produce V
aDJ1voltage, now, V
cSTvoltage can be expressed as:
The peak current detection sampling unit 2 of the LED drive circuit of above two embodiment can be found out, the core design of this element is comparator, the conversion speed of comparator directly affects the order of accuarcy of system ON time and turn-off time, and then can affect the working point of system, therefore require designed comparator should there is fast as far as possible conversion speed.Here adopt two-stage comparator circuit to realize, particular circuit configurations as shown in Figure 6.
The DC-DC transducer that the present embodiment adopts simultaneously, by comparing the first resistance R
1on pressure drop V
sNSpeak current detection threshold voltage V with comparator circuit
cSTtrigger main switch Q
1shutoff, and do not need error amplifier and feedback network, therefore, compared with traditional voltage mode control, there is faster response speed.
Embodiment 3:
The dimming control unit 1 of the present embodiment and peak current detection sampling unit 2 are identical with embodiment's 1.
With reference to Fig. 7, the constant turn-off time control unit 3 of the present embodiment comprises comparator 301, rest-set flip-flop 302, inverter 303 and inverter 304, NAND gate 305, the 4th capacitor C
4, the 8th resistance R
8with NMOS pipe M
301.Wherein:
Described comparator 301, its in-phase input end connects reference voltage V
rEF, its inverting input connects NMOS pipe M
301drain electrode, and by the 8th resistance R
8be connected to output voltage V
aDJ2upper or by the 4th capacitor C
4ground connection, the reset terminal R of its output termination rest-set flip-flop; Described rest-set flip-flop is made up of two NAND gate, and it is put number end S and is connected on the output of inverter 303, and its output is connected on the input of inverter 304; Described inverter 303, the output signal V of its input termination peak current detection sampling unit 2
3; Described inverter 304, in an input of its output termination NAND gate 305; Another input termination enable signal V of described NAND gate 305
eN2, its output termination output voltage V
2; Described NMOS pipe M
301, its grid connects the output signal V of peak current detection sampling unit 2
3, its source ground.
The LED drive circuit of the present embodiment, its turn-off time T
oFFconstant, mainly by the 8th resistance R
8, the 4th capacitor C
4, output voltage V
aDJ2regulate in advance.Due to circuit adopt be constant current drive mode, I
lEDcan well control, so output voltage V
aDJ2will be a constant value, can not change with the variation of input voltage and temperature.
T
oFFthe initial time in moment, the 4th capacitor C
4on voltage be zero, output voltage V subsequently
aDJ2to provide electric charge to electric capacity, electric capacity starts charging, and charge constant is by R
8and C
4determine.As the voltage (V at electric capacity two ends
cOFF) charge to and reference voltage V
rEFwhile equating, the turn-off time finishes, capacitor discharge to zero.T
oFFcomputing formula be:
By the turn-off time T in above-described embodiment 1 and embodiment 3
oFFand T
oFF' can find out: it is by the 8th resistance R
8, the 4th capacitor C
4with a constant voltage V
aDJ2determine, once therefore determine their parameter value, the turn-off time of circuit is invariable.Meanwhile, the constant turn-off time control model LED drive circuit proposing in the present invention is without external compensating network, and loop compensation is succinct, is easy to realize, and it is convenient to control; And switching frequency is only with V
iNincrease and increase, the stability of a system is good.
Below be only three preferred example of the present invention, do not form any limitation of the invention, obviously, under design of the present invention, can carry out different changes and improvement to its circuit, but these are all at the row of protection of the present invention.