CN103794428A - Etching device and etching method - Google Patents
Etching device and etching method Download PDFInfo
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- CN103794428A CN103794428A CN201110459321.4A CN201110459321A CN103794428A CN 103794428 A CN103794428 A CN 103794428A CN 201110459321 A CN201110459321 A CN 201110459321A CN 103794428 A CN103794428 A CN 103794428A
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- etching
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- etching device
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- 238000005530 etching Methods 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000007788 liquid Substances 0.000 claims abstract description 57
- 238000002347 injection Methods 0.000 claims abstract description 16
- 239000007924 injection Substances 0.000 claims abstract description 16
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 5
- 238000003860 storage Methods 0.000 claims description 17
- 230000008602 contraction Effects 0.000 claims description 9
- 239000012530 fluid Substances 0.000 claims description 9
- 238000005507 spraying Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 25
- 239000007921 spray Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 229910017813 Cu—Cr Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-NJFSPNSNSA-N Xenon-133 Chemical compound [133Xe] FHNFHKCVQCLJFQ-NJFSPNSNSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229940106670 xenon-133 Drugs 0.000 description 1
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Abstract
The invention provides an etching device and an etching method. The etching device comprises multiple parallelly-arranged jet pipes (1) and a first nozzle connected with the jet pipes (1) and further comprises a liquid spraying device (3) at an upstream side of the jet pipes (1), wherein the liquid spraying device (3) comprises a liquid injection portion, a liquid storing portion (5) communicated with the liquid injection portion, and a second nozzle (6) at a bottom portion of the liquid storing portion (5). The etching device effectively solves a problem of non-uniform etching.
Description
Technical field
The present invention relates to optical etching technology field, in particular to a kind of etching device and lithographic method.
Background technology
Plasma panel is a kind of self-luminous, lightweight, visual angle is wide, thin thickness, total digitalization, the dynamic good New flat panel display part of display effect.
In display, some parts all need to use photoengraving technique such as maintaining show electrode, bus electrode, and this technique all needs to use etching device.Wherein the gap length of sustain discharge electrode is very large on display unit electric discharge firing voltage and voltage margin impact.Etching device of the prior art comprises the parallel jet pipe and the nozzle being connected with jet pipe arranging, and when use, substrate moves towards etching device, move to etching device under, adopt the mode of nozzle spray to carry out etching with formation electrode.
Utilize above-mentioned etching device to be prone to the inhomogeneous problem of etching, and then cause the width of (BUS) electrode that confluxes making inhomogeneous.
Summary of the invention
The present invention aims to provide a kind of etching device and lithographic method, to solve the inhomogeneous problem of etching in prior art.
To achieve these goals, according to an aspect of the present invention, provide a kind of etching device, comprise: the parallel multiple jet pipes and the first nozzle being connected with jet pipe that arrange, etching device also comprises: liquid-jet device, be positioned at the upstream side of jet pipe, and liquid-jet device comprises: liquid injection unit; Liquid storage portion, is communicated with liquid injection unit; Second nozzle, is positioned at the bottom of liquid storage portion.
Further, liquid injection unit comprises the flexible pipe of multiple parallel settings.
Further, liquid storage portion comprises body and contraction flow region, and contraction flow region is positioned at the below of body and extends gradually downward with shrinking, and second nozzle is connected to the bottom of contraction flow region.
Further, second nozzle has adjustable fluid gap.
Further, extend along the direction perpendicular to jet pipe in the fluid gap of second nozzle.
According to a further aspect in the invention, provide a kind of lithographic method, comprised the following steps: utilized the second nozzle of liquid-jet device to make etching liquid naturally flow to the surface of parts to be etched; Thereby utilize the first nozzle being connected with jet pipe to make electrode to the jet surface etching liquid of parts to be etched.
Apply technical scheme of the present invention, increased liquid-jet device in etching device, be arranged on the upstream side of jet pipe, this liquid-jet device comprises: liquid injection unit, liquid storage portion and second nozzle, and wherein, liquid storage portion is communicated with liquid injection unit; Second nozzle is positioned at the bottom of liquid storage portion.Apply liquid-jet device of the present invention, etching liquid is injected in liquid storage portion by liquid injection unit, etching liquid flows out from second nozzle by self gravitation effect, the substrate that is positioned at second nozzle below moves, make liquid continuously flow to the surface of this substrate, because expulsion pressure is very little, be difficult for causing uneven distribution.Like this, can allow etching liquid uniformly spray at substrate surface, be conducive to like this improve the affinity of substrate surface and etching liquid, reduce because nozzle directly sprays cause circular-arc inhomogeneous.Improve the uniformity of show electrode, improve the stability of discharge cell.
Accompanying drawing explanation
The Figure of description that forms the application's a part is used to provide a further understanding of the present invention, and schematic description and description of the present invention is used for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows according to the schematic top plan view of the embodiment of etching device of the present invention, wherein in figure, also shows substrate to be etched;
Fig. 2 shows the cross-sectional schematic of the liquid-jet device of the etching device of Fig. 1; And
Fig. 3 shows according to the schematic flow sheet of the embodiment of lithographic method of the present invention.
Embodiment
It should be noted that, in the situation that not conflicting, the feature in embodiment and embodiment in the application can combine mutually.Describe below with reference to the accompanying drawings and in conjunction with the embodiments the present invention in detail.
Inventor is through a series of verification experimental verification, and the etching effect of etching device is not only subject to the restriction of emulsion character and master state, is more subject to etching condition as the impact of the concentration of etching liquid, temperature, degree of fatigue and etch period etc.Concrete situation is as follows:
The impact of concentration: the concentration of etching liquid, generally refers to the content of etching host.Etching liquid concentration deficiency, not only can increase etch period, and easily causes etching not thorough.Concentration is excessive, and etch period is accelerated, and whole process is difficult to control, and easily causes etching excessive, corrodes and dissolves the photosensitive layer that is subject to light, reduces adhesive force.
The impact of temperature: in the metastable situation of other etching conditions.Etching temperature is higher, and etching speed is faster, otherwise slower.General etching temperature should be controlled at 35 ℃ of left and right.Temperature changes with nozzle angle, and angle is less, and to be ejected into temperature on substrate higher, and it is lower that fan-shaped angle is ejected into more greatly temperature on substrate.
The impact of pressure: pressure changes with nozzle angle, angle is less, and to be ejected into pressure on substrate larger, and it is less that fan-shaped angle is ejected into more greatly pressure on substrate.
Inventor finds through series of experiments, nozzle Temperature Distribution in the time spraying is discrepant, fan-shaped outside and middle part are variant, the pressure being ejected on glass substrate also has deviation, thereby cause the circular-arc ripple of etching, and then make show electrode etching inhomogeneous, affect the stability of discharge cell.
For the problems referred to above, inventor has adjusted the first bleed type, and change wobble frequency and all cannot eliminate this inhomogeneous ripple completely, research by analysis, the infiltrative type of finding etching liquid and substrate surface does not with great difficulty produce that this type of is inhomogeneous.
As shown in Figure 1, comprise according to the embodiment of etching device of the present invention: the parallel multiple jet pipes 1 and the first nozzle (not shown) being connected with jet pipe 1 that arrange, etching device also comprises: liquid-jet device 3, be positioned at the upstream side of jet pipe 1, as shown in Figure 2, this liquid-jet device 3 comprises: liquid injection unit, liquid storage portion 5 and second nozzle 6, wherein, liquid storage portion 5 is communicated with liquid injection unit, and second nozzle 6 is positioned at the bottom of liquid storage portion 5.
As shown in Figure 1, substrate 10 moves right in the scope of the etching device that enters the present embodiment, the liquid-jet device of application the present embodiment makes etching liquid be injected in liquid storage portion by liquid injection unit, etching liquid flows out from second nozzle by self gravitation effect, the substrate that is positioned at second nozzle below moves, make liquid continuously flow to the surface of this substrate, because expulsion pressure is very little, be difficult for causing uneven distribution.Like this, can allow etching liquid uniformly spray at substrate surface, be conducive to like this improve the affinity of substrate surface and etching liquid, reduce because nozzle directly sprays cause circular-arc inhomogeneous.Improve the uniformity of show electrode, improve the stability of discharge cell.
In order to guarantee injection rate, with the fluid flow that guarantees to need, as shown in Figure 2, liquid injection unit comprises the flexible pipe 4 of multiple parallel settings.Liquid storage portion 5 comprises body 51 and contraction flow region 52, and contraction flow region 52 is positioned at the below of body 51 and extends gradually downward with shrinking, and second nozzle 6 is connected to the bottom of contraction flow region 52.Fluid storage portion 5 is maintain second nozzle pressure stable, only has the pressure that increases fluid storage portion 5 guarantee second nozzles to be consistent.
Preferably, the fluid gap of second nozzle is adjustable.Object is the flow of being convenient to adjust second nozzle hydrojet.Extend along the direction perpendicular to jet pipe 1 in the fluid gap of second nozzle.
Carry out the manufacture of plasma display by following steps:
A, cleaning glass substrate, sputter BUS electrode (Cr-Cu-Cr)
B, the pr that makes show electrode apply, dry and exposure, particularly, first gluing, expose again, development and ultra-violet curing.
C, utilize above-mentioned etching device to carry out etching, increased a kind of liquid-jet device with soaking function; Particularly, substrate moves right and enters etching device below, first utilizes the second nozzle of liquid-jet device that etching liquid is evenly sprayed to substrate surface, then enters spray region, utilizes the first nozzle being connected with jet pipe 1 to spray substrate; Substrate moves on the roller of equipment, and all nozzles (the first and second nozzles) are all arranged on the top of substrate.
D, utilize light source testing fixture analyze experimental data, therefrom Optimizing Process Parameters.
E, finally by the upper and lower base plate machining to, sealing-in exhaust, be finally filled with high containing xenon-133 gas to obtain the display of Uniform Discharge.
The display lighting efficiency of utilizing said method to produce is high, and technique is simple, without extra process equipment.
The present invention also provides a kind of lithographic method, as shown in Figure 3, comprises the following steps according to the embodiment of lithographic method of the present invention:
S10: utilize the second nozzle 6 of liquid-jet device 3 to make etching liquid naturally flow to the surface of parts to be etched.
Preferably, utilize above-mentioned etching device, the liquid-jet device that it has soaking function, allows etching liquid uniformly spray at substrate surface, is conducive to like this improve the affinity of substrate surface and etching liquid, reduces because nozzle directly sprays cause circular-arc inhomogeneous.Improve the uniformity of show electrode, improve the stability of discharge cell.
S20: thus utilize the first nozzle being connected with jet pipe 1 to make electrode to the jet surface etching liquid of parts to be etched.
By light source inspection desk, the electrode making is observed, confirmed that its uniformity has obtained good lifting.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (6)
1. an etching device, comprising: the parallel multiple jet pipes (1) and the first nozzle being connected with described jet pipe (1) that arrange, it is characterized in that, and described etching device also comprises:
Liquid-jet device (3), is positioned at the upstream side of jet pipe (1), and described liquid-jet device (3) comprising:
Liquid injection unit;
Liquid storage portion (5), is communicated with described liquid injection unit;
Second nozzle (6), is positioned at the bottom of described liquid storage portion (5).
2. etching device according to claim 1, is characterized in that, described liquid injection unit comprises the flexible pipe (4) of multiple parallel settings.
3. etching device according to claim 1, it is characterized in that, described liquid storage portion (5) comprises body (51) and contraction flow region (52), described contraction flow region (52) is positioned at the below of described body (51) and shrinks gradually downward ground and extend, and described second nozzle (6) is connected to the bottom of described contraction flow region (52).
4. etching device according to claim 1, is characterized in that, described second nozzle (6) has adjustable fluid gap.
5. according to the etching device described in any one in claim 1 to 4, it is characterized in that, extend along the direction perpendicular to described jet pipe (1) in the fluid gap of described second nozzle (6).
6. a lithographic method, is characterized in that, right to use requires the etching device described in any one in 1 to 5, comprises the following steps:
Utilize the second nozzle (6) of liquid-jet device (3) to make etching liquid naturally flow to the surface of parts to be etched;
Utilize with jet pipe (1) thus the first nozzle being connected makes electrode to the jet surface etching liquid of described parts to be etched.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110459321.4A CN103794428A (en) | 2011-12-31 | 2011-12-31 | Etching device and etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110459321.4A CN103794428A (en) | 2011-12-31 | 2011-12-31 | Etching device and etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103794428A true CN103794428A (en) | 2014-05-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110459321.4A Pending CN103794428A (en) | 2011-12-31 | 2011-12-31 | Etching device and etching method |
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| Country | Link |
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| CN (1) | CN103794428A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107435148A (en) * | 2017-08-08 | 2017-12-05 | 无锡格菲电子薄膜科技有限公司 | Apparatus and method for etching a continuous product |
| CN108878325A (en) * | 2018-06-27 | 2018-11-23 | 云谷（固安）科技有限公司 | Coating machine and its coating liquid delivery device |
Citations (7)
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|---|---|---|---|---|
| JPH1018058A (en) * | 1996-07-05 | 1998-01-20 | Sumitomo Metal Ind Ltd | Method for controlling flow rate of etchant in photo-etching machine |
| KR100232593B1 (en) * | 1997-01-24 | 1999-12-01 | 구자홍 | Etching system for plasma display panel and method thereof |
| JP2000045081A (en) * | 1998-07-29 | 2000-02-15 | Toppan Printing Co Ltd | Metal etching method |
| KR20050086220A (en) * | 2004-02-25 | 2005-08-30 | 삼성에스디아이 주식회사 | Plasma display panel and device for manufacturing rib of pdp and method thereof |
| CN1925723A (en) * | 2005-08-31 | 2007-03-07 | 显示器生产服务株式会社 | Substrate processing device |
| CN1975983A (en) * | 2005-11-28 | 2007-06-06 | 株式会社日立高科技 | Substrate processing device, substrate processing method and substrate manufacture method |
| CN102154648A (en) * | 2010-02-12 | 2011-08-17 | 住友精密工业株式会社 | Etching method |
-
2011
- 2011-12-31 CN CN201110459321.4A patent/CN103794428A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1018058A (en) * | 1996-07-05 | 1998-01-20 | Sumitomo Metal Ind Ltd | Method for controlling flow rate of etchant in photo-etching machine |
| KR100232593B1 (en) * | 1997-01-24 | 1999-12-01 | 구자홍 | Etching system for plasma display panel and method thereof |
| JP2000045081A (en) * | 1998-07-29 | 2000-02-15 | Toppan Printing Co Ltd | Metal etching method |
| KR20050086220A (en) * | 2004-02-25 | 2005-08-30 | 삼성에스디아이 주식회사 | Plasma display panel and device for manufacturing rib of pdp and method thereof |
| CN1925723A (en) * | 2005-08-31 | 2007-03-07 | 显示器生产服务株式会社 | Substrate processing device |
| CN1975983A (en) * | 2005-11-28 | 2007-06-06 | 株式会社日立高科技 | Substrate processing device, substrate processing method and substrate manufacture method |
| CN102154648A (en) * | 2010-02-12 | 2011-08-17 | 住友精密工业株式会社 | Etching method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107435148A (en) * | 2017-08-08 | 2017-12-05 | 无锡格菲电子薄膜科技有限公司 | Apparatus and method for etching a continuous product |
| CN108878325A (en) * | 2018-06-27 | 2018-11-23 | 云谷（固安）科技有限公司 | Coating machine and its coating liquid delivery device |
| CN108878325B (en) * | 2018-06-27 | 2021-03-26 | 云谷（固安）科技有限公司 | Coating machine and coating liquid output device thereof |
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Application publication date: 20140514 |