[go: up one dir, main page]

CN103782380A - 半导体模块 - Google Patents

半导体模块 Download PDF

Info

Publication number
CN103782380A
CN103782380A CN201280039872.8A CN201280039872A CN103782380A CN 103782380 A CN103782380 A CN 103782380A CN 201280039872 A CN201280039872 A CN 201280039872A CN 103782380 A CN103782380 A CN 103782380A
Authority
CN
China
Prior art keywords
electrode
terminal
electrode pattern
semiconductor element
semiconductor module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201280039872.8A
Other languages
English (en)
Other versions
CN103782380B (zh
Inventor
图子祐辅
村上善则
谷本智
佐藤伸二
松井康平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Nissan Motor Co Ltd
Original Assignee
Fuji Electric Co Ltd
Nissan Motor Co Ltd
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Nissan Motor Co Ltd, Sanken Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of CN103782380A publication Critical patent/CN103782380A/zh
Application granted granted Critical
Publication of CN103782380B publication Critical patent/CN103782380B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
    • H01L2224/48132—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48235—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a via metallisation of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1027—IV
    • H01L2924/10272—Silicon Carbide [SiC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/1033—Gallium nitride [GaN]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13062—Junction field-effect transistor [JFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inverter Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

一种半导体模块，其具有：一对半导体元件（16，18），它们具有与第1电力系统（BT）电气连接的第1端子（12，14）、和与第2电力系统（M）电气连接的第2端子（13），彼此串联连接；散热器（7）；第1电极（10），其分别与所述第1端子的一个第1端子（12）、和所述一对半导体元件中的一个半导体元件（16）的一个电极电气连接；输出电极（11），其分别与所述第2端子（13）、和所述一对半导体元件中的另一个半导体元件（18）的一个电极电气连接；以及第2电极（9），其与所述第1端子的另一个第1端子（14）电气连接，所述第2电极（9）经由第1绝缘部件（8a）与所述散热器（7）连接，所述输出电极（11）经由第2绝缘部件（8b）与所述第2电极（9）连接。

Description

半导体模块
技术领域
本发明涉及一种半导体模块。
背景技术
已知一种电力变换装置，其通过对冷却片（散热器）的材质使用例如陶瓷等，降低电力变换装置（变换器）的对地寄生电容，从而能够降低成为噪声的原因的泄漏电流（专利文献1）。
专利文献1：日本特许第3,649,259号公报
发明内容
然而，在上述现有技术的结构中，与冷却片由金属形成的情况相比，能够降低电力变换装置的对地寄生电容，但例如陶瓷的导热系数比金属的导热系数低，因此可能无法充分地使电力变换装置冷却。
本发明的目的在于，降低电力变换装置的对地寄生电容，并且防止冷却电力变换装置的性能下降。
本发明通过下述方式实现上述目的，即，通过经由绝缘部件将输出电极与第2电极连接，经由其它绝缘部件将第2电极与散热器连接。
发明的效果
根据本发明，输出电极经由第2电极接地，输出电极与接地之间的寄生电容、和第2电极与接地之间的寄生电容成为串联连接的电路结构，因此，能够降低共模电流，并且，输出电极和第2电极由低电阻连接，因此能够防止冷却电力变换装置的性能下降。
附图说明
图1是表示使用本发明的一个实施方式所涉及的半导体模块的变换器电路的一个例子的电路图。
图2是用于说明共模电流的电路图。
图3A是表示本发明的一个实施方式所涉及的半导体模块的侧视图。
图3B是图3A的俯视图。
图4是用于说明图3A、图3B的半导体模块的作用效果的电路图。
图5A是表示图3A、图3B的半导体模块的变形例的侧视图。
图5B是图5A的俯视图。
图6A是表示本发明的其它实施方式所涉及的半导体模块的侧视图。
图6B是图6A的俯视图。
图7是用于说明图6A、6B的半导体模块的作用效果的电路图。
具体实施方式
本发明涉及一种电力模块和对其进行冷却的散热器，该电力模块构成利用例如SiC等宽带隙半导体元件的电力变换器的开关部分。在利用宽带隙半导体元件的电力变换器中，为了发挥该元件的特性并进行小型化，使电源电压高电压化，为了降低损耗而要求高速地进行元件的通断。
然而，高电压的变换器必须与接地（以下，也称为GND）绝缘，如果电源电压升高，高速地进行接通/断开，则每单位时间的电压变化量（dV/dt）变大，存在在电力模块和GND之间的绝缘层中寄生的静电电容中流过的电流增大的问题。
流过该静电电容的电流Icm，能够利用静电电容C和dV/dt，由Icm＝C×（dV/dt）表示，作为从高电压系统向GND泄漏的共模电流而定义。由于与该电流振幅和电流流过的环面积成正比的噪声向外部放射，因此共模电流成为难以依照EMC（Electro-MagneticCompatibility）标准的主要原因。另一方面，为了将电力变换器小型化，而要求使占据变换器体积的大部分的散热器缩小。
因此，在本发明中，通过将多个绝缘部件与AC电极图案、P电极图案、N电极图案层叠而与散热器连接，从而降低共模电流的振幅，并且通过缩小冷却路径，从而降低放射噪声，不使散热器大型化。
下面，基于附图，详细地对本发明的一个实施方式进行说明。在图1中，作为使用本发明的一个实施方式所涉及的半导体模块的系统的例子，示出三相的变换器电路。本例的半导体模块1是具有1相的电压切换机构的2in1模块，以下说明的具体结构利用2in1模块示出，但本发明所涉及的半导体模块也可以是将多相的功能集合而成的半导体模块。
图1所示的电力变换系统通过平滑用电容器C及电力变换装置INV，将供给电池BT等的第1电力变换为第2电力，并将其供给至三相交流电动机M，或者通过电力变换装置INV及平滑用电容器C，将三相交流电动机M的再生电力变换为第1电力，由此，对供给电池BT进行充电。
首先，参照表示现有结构的半导体模块101的图2，对共模电流进行说明。由开关元件和整流元件构成的P侧半导体元件102和N侧半导体元件103，由利用例如SiC和GaN等宽带隙半导体的MOSFET（Metal-Oxide-Semiconductor Field-Effect Transistor）、JFET（Junction gate Field-Effect Transistor）、BJT（Bipolar JunctionTransistor）、IGBT(Insulated Gate Bipolar Transistor)、二极管等元件构成。
它们与控制信号相对应而将电源电压接通/断开，生成交流电力。此时，AC端子部107在短时间内从几V变化至电源电压，由于该电压变化，而在AC电极图案和GND之间的寄生电容104中，流过如箭头线A所示的共模电流。
另外，由于在开关过渡时P端子108的电压也发生变动，因此，在P电极图案和GND之间的寄生电容105中流过电流，流过如箭头线B所示的共模电流。同样的现象在各相的半导体模块中发生，共模电流经由负载的对地电容（未图示）、电源的对地电容（未图示）、N电极图案和GND间的寄生电容106等，流过高电压系统和GND，向外部放射噪声。并且，该放射噪声的振幅与共模电流的振幅和流过的环面积成正比例。
《第1实施方式》
图4是表示本发明的第1实施方式所涉及的半导体模块的、包含寄生电容的电路图。本例的半导体模块1具有分别由开关元件和整流二极管构成的P侧半导体元件16、N侧半导体元件18、及散热器7，并设有与第1电力系统电气连接的P端子12及N端子14、与第2电力系统电气连接的AC端子13。另外，4表示AC端子13所连接的AC电极图案11与接地GND之间的寄生电容，5表示P端子12所连接的P电极图案10和接地GND之间的寄生电容，6表示N端子14所连接的N电极图案9与接地GND之间的寄生电容。
图3A是表示图4所示的第1实施方式所涉及的半导体模块的侧视图，图3B是俯视图，本例的半导体模块1具有与接地GND连接的散热器7，在该散热器7上经由绝缘层8a连接有N电极图案9，在该N电极图案9上经由其它绝缘层8b连接有P电极图案10和AC电极图案11。并且，在P电极图案10上安装有电流输入输出用的P端子12，在AC电极图案11上安装有电流输入输出用的AC端子13，在N电极图案9上安装有电流输入输出用的N端子14。
各电极图案9、10、11和绝缘层8a、8b优选由利用氮化硅的多层陶瓷基板构成。另外，在与散热器7相接的面上设有连接用的金属图案15，成为多层陶瓷基板和散热器7通过软钎焊或硬钎焊而电气且机械连接的结构。
在图示的P电极图案10的上表面，安装形成于P侧半导体元件16的下表面的电极并电气连接，在P侧半导体元件16的上表面形成的电极，利用接合线17a等与AC电极图案11电气连接。另外，在图示的AC电极图案11的上表面，安装形成于N侧半导体元件18的下表面的电极并电气连接，在N侧半导体元件18的上表面形成的电极，利用接合线17b等与N电极图案9电气连接。
另外，虽未图示，但在P侧半导体元件16以及N侧半导体元件18中的开关元件上连接有信号线，该信号线将其开关信号从驱动电路向所输入的电极输出。另外，未进行图示，但多层绝缘基板被壳体包围，利用绝缘性材料进行封闭。
如上所述，在接地的散热器7上，经由绝缘层8a设置N电极图案9，在该N电极图案9上，经由绝缘层8b设有P电极图案10和AC电极图案11，由此，决定图4所示的共模电流大小的AC电极图案11和接地GND之间的寄生电容，成为AC电极图案11和N电极图案9之间的寄生电容4与N电极图案9和接地GND之间的寄生电容6串联连接的电路结构。另外，P电极图案10和接地GND之间的寄生电容，成为P电极图案10和接地GND之间的寄生电容5与N电极图案9和接地GND之间的寄生电容6串联连接的电路结构。
在将大于或等于2个电容器C1、C2连接的情况下，整体的电容器电容C，在并联连接的情况下为C＝C1＋C2＋…，与此相对，在串联连接的情况下为C＝1/C1＋1/C2＋……，串联连接的静电电容较小。因此，在本例的半导体模块中，通过串联连接而使寄生电容变小，由此，由Icm＝C×（dV/dt）表示的共模电流也变小。
另一方面，从冷却的观点出发，在本例中，增加了一层绝缘层8b，但由于P电极图案10和N电极图案9、以及AC电极图案11和N电极图案9分别低电阻地连接，因此，冷却性能的下降极其微弱。
并且，如图3所示，从P端子12经由AC电极图案11至N端子14的电流路径，成为相对的结构，因此，P端子12和N端子14之间为低阻抗。因此，能够抑制开关过渡时的P端子12的电压变动。
另外，为了使N端子14的取出和与N侧半导体元件18之间的连接容易进行，如图5所示，N电极图案9也可以在多层陶瓷基板上侧的绝缘层8b上设有通孔19，将N电极图案9的一部分配置在绝缘层8b的上表面。
《第2实施方式》
图6A是表示本发明的第2实施方式所涉及的半导体模块的侧视图，图6B是俯视图。本例的半导体模块1具有与接地GND连接的散热器7，在该散热器7上经由绝缘层8c连接有N电极图案9a及P电极图案10a，在该N电极图案9a上经由其它绝缘层8d连接有AC电极图案11a。并且，在P电极图案10a上安装有电流输入输出用的P端子12，在AC电极图案11a上安装有电流输入输出用的AC端子13，在N电极图案9a上安装有电流输入输出用的N端子14。与上述的图3A、图3B所示的第1实施方式的半导体模块1相比，P电极图案10、10a的层叠位置不同。
各电极图案9a、10a、11a和绝缘层8c、8d，优选由使用氮化硅的多层陶瓷基板构成。另外，在与散热器7相接的面上设有连接用的金属图案15，成为通过软钎焊或硬钎焊将多层陶瓷基板和散热器7电气且机械连接的结构。
在图示的P电极图案10a的上表面，安装形成于P侧半导体元件16的下表面上的电极并电气地连接，形成在P侧半导体元件16的上表面的电极通过接合线等17c与AC电极图案11a电气连接。另外，在图示的AC电极图案11a的上表面，安装形成于N侧半导体元件18的下表面的电极并电气地连接，形成在N侧半导体元件18的上表面的电极通过接合线等17d与N电极图案9a电气连接。
另外，未进行图示，但在P侧半导体元件16以及N侧半导体元件17中的开关元件上连接有信号线，该信号线将其开关信号从驱动电路向所输入的电极输出。另外，未进行图示，但多层绝缘基板被壳体包围，通过绝缘性材料进行封闭。
特别地，在本例的半导体模块1中构成为，图6B的俯视中的P电极图案10a的面积和N电极图案9a的面积相同或大致相同，在AC电极图案11a的下层中的不存在N电极图案9a的部分处，充填有与绝缘层8c相同的陶瓷基材。
通过如上所述的结构，在图7所示的电路中，P电极图案10a和接地GND之间的寄生电容5a与第1实施方式相比变大，但N电极图案9a和接地GND之间的寄生电容6a与第1实施方式相比变小，同时与P电极图案10a和接地GND之间的寄生电容5a相当。由此，在某相（U、V、W的各相）的半导体模块中发生的共模电流不会流向供给电池BT侧和电动机M侧，而在相近的其它相的半导体模块内的寄生电容中循环。其结果，减小共模电流的环面积。
另外，通过使N电极图案9a和接地GND之间的寄生电容6a变小，从而也使与AC电极图案11a和N电极图案9a之间的寄生电容4a的串联电容即AC图案11a和接地GND之间的寄生电容（寄生电容4a和寄生电容6a的总电容）变小，因此，共模电流的振幅也变小。因此，降低放射噪声。
如上所述，在上述第1实施方式以及第2实施方式的半导体模块1中，作为向接地GND泄漏的泄漏电流的原因的AC电极图案11、11a经由N电极图案9、9a接地，因此，AC电极图案11、11a的对GND电容变小，由此，能够抑制共模电流。
另外，在上述第1实施方式的半导体模块1中，由于次于AC电极图案11、11a而成为泄漏电流的原因的P电极图案10、10a经由N电极图案9、9a接地，因此，P电极图案9、9a的对GND电容变小，并且，PN端子间的阻抗减小，因此，抑制开关过渡时的P电极图案9、9a的电压变动，由此能够抑制共模电流。
另外，根据上述第2实施方式的半导体模块1，由于P电极图案10a的对GND电容和N电极图案9a的对GND电容相当，因此，共模电流在彼此接近的半导体模块之间循环，其结果，环面积变小，能够抑制放射噪声。
并且，根据图5A及图5B所示的半导体模块1，P电极图案10及AC电极图案11与N电极图案9之间的接触面积（在层叠方向上重合的面积）变宽，因此使阻抗降低，并且从P电极图案10至散热器7的热阻变小，从AC电极图案11至散热器7的热阻变小，因此能够使散热器7小型化。
另外，在上述实施方式中，以进行所谓直流－交流变换的逆变器为例，对电力变换装置进行了说明，但例如在直流－直流变换（DC－DC变换）等中也能够获得相同的作用效果。
上述供给电池BT相当于本发明所涉及的第1电力系统，上述P端子12以及N端子14相当于本发明所涉及的第1端子，上述电动机M相当于本发明所涉及的第2电力系统，上述AC端子13相当于本发明所涉及的第2端子，上述P电极图案10、10a相当于本发明所涉及的第1电极，上述N电极图案9、9a相当于本发明所涉及的第2电极，上述AC电极图案11、11a相当于本发明所涉及的输出电极，上述绝缘层8a、8c相当于本发明所涉及的第1绝缘部件，上述绝缘层8b、8d相当于本发明所涉及的第2绝缘部件。
标号的说明
1：半导体模块
2：P侧半导体元件
3：N侧半导体元件
4、5、6、4a、5a、6a：寄生电容
7：散热器
8a、8b、8c、8d：绝缘层
9、9a：N电极图案
10、10a：P电极图案
11、11a：AC电极图案
12：P端子
13：AC端子
14：N端子
15：金属图案
16：P侧半导体元件
17a、17b：接合线
18：N侧半导体元件
19：通孔
BT：二次电池
C：平滑用电容器
M：电动机
INV：电力变换部

Claims (4)

1.一种半导体模块，其具有：
一对串联连接的半导体元件，它们具有与第1电力系统电气连接的第1端子、和与第2电力系统电气连接的第2端子；
散热器；
第1电极，其分别与所述第1端子中的一个第1端子、和所述一对半导体元件中的一个半导体元件的一个电极电气连接；
输出电极，其分别与所述第2端子、和所述一对半导体元件中的另一个半导体元件的一个电极电气连接；以及
第2电极，其与所述第1端子中的另一个第1端子电气连接，
所述一个半导体元件的另一个电极，与所述输出电极电气连接，
所述另一个半导体元件的另一个电极，与所述第2电极电气连接，
所述第2电极经由第1绝缘部件与所述散热器连接，
所述输出电极经由第2绝缘部件与所述第2电极连接。
2.根据权利要求1所述的半导体模块，其中，
所述第1电极经由所述第2绝缘部件与所述第2电极连接。
3.根据权利要求1所述的半导体模块，其中，
所述第1电极经由所述第1绝缘部件与所述散热器连接，
所述第1电极的面积和所述第2电极的面积大致相同。
4.根据权利要求1至3中任一项所述的半导体模块，其中，
所述第2电极包含：
与所述输出电极形成在同一面上的电极；
形成在所述第1绝缘部件上的电极；以及
将上述两个电极电气地连接的通孔。
CN201280039872.8A 2011-08-25 2012-08-24 半导体模块 Active CN103782380B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011184019A JP5798412B2 (ja) 2011-08-25 2011-08-25 半導体モジュール
JP2011-184019 2011-08-25
PCT/JP2012/071398 WO2013027819A1 (ja) 2011-08-25 2012-08-24 半導体モジュール

Publications (2)

Publication Number Publication Date
CN103782380A true CN103782380A (zh) 2014-05-07
CN103782380B CN103782380B (zh) 2019-12-13

Family

ID=47746554

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280039872.8A Active CN103782380B (zh) 2011-08-25 2012-08-24 半导体模块

Country Status (5)

Country Link
US (1) US8921998B2 (zh)
EP (1) EP2750184B1 (zh)
JP (1) JP5798412B2 (zh)
CN (1) CN103782380B (zh)
WO (1) WO2013027819A1 (zh)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105424260A (zh) * 2014-09-17 2016-03-23 富士电机株式会社 压力传感器装置以及压力传感器装置的制造方法
CN105529309A (zh) * 2014-10-17 2016-04-27 三菱电机株式会社 半导体装置
CN105720046A (zh) * 2014-12-18 2016-06-29 三菱电机株式会社 半导体模块以及半导体装置
JP2018535553A (ja) * 2016-03-30 2018-11-29 ミツビシ・エレクトリック・アールアンドディー・センター・ヨーロッパ・ビーヴィＭｉｔｓｕｂｉｓｈｉ Ｅｌｅｃｔｒｉｃ Ｒ＆Ｄ Ｃｅｎｔｒｅ Ｅｕｒｏｐｅ Ｂ．Ｖ． 少なくとも１つのダイを備えるパワー半導体モジュールの損傷レベル又は寿命予測を推定する方法及びデバイス
CN110034100A (zh) * 2017-11-15 2019-07-19 夏普株式会社 功率半导体组件及电子设备
CN111199959A (zh) * 2018-11-19 2020-05-26 台达电子企业管理（上海）有限公司 功率模块的封装结构
TWI735179B (zh) * 2020-03-11 2021-08-01 佳世達科技股份有限公司 電子裝置與其減低漏電流方法
CN114257061A (zh) * 2020-09-11 2022-03-29 丰田自动车株式会社 电力转换装置
CN114725055A (zh) * 2022-02-28 2022-07-08 华为数字能源技术有限公司 一种功率模块、电力系统和电子设备

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016012973A (ja) * 2014-06-27 2016-01-21 株式会社オートネットワーク技術研究所 回路装置
CN106489203B (zh) 2014-07-03 2018-09-18 日产自动车株式会社 半桥式功率半导体模块及其制造方法
JP6344477B2 (ja) * 2014-09-17 2018-06-20 富士電機株式会社 半導体モジュール
JP6288301B2 (ja) * 2014-11-28 2018-03-14 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
CN104867888A (zh) * 2015-05-04 2015-08-26 嘉兴斯达半导体股份有限公司 一种高散热性SiC的功率模块
WO2017002390A1 (ja) * 2015-06-30 2017-01-05 シャープ株式会社 回路モジュール
US10404186B2 (en) 2016-10-27 2019-09-03 General Electric Company Power module systems and methods having reduced common mode capacitive currents and reduced electromagnetic interference
JP6809294B2 (ja) * 2017-03-02 2021-01-06 三菱電機株式会社 パワーモジュール
JP2018195694A (ja) * 2017-05-17 2018-12-06 株式会社Ｓｏｋｅｎ 電力変換器
JP6888468B2 (ja) * 2017-08-01 2021-06-16 富士電機株式会社 鉄道車両用電力変換装置
JP7252705B2 (ja) * 2017-09-28 2023-04-05 デンカ株式会社 多層回路基板及びその製造方法
JP6954029B2 (ja) * 2017-11-15 2021-10-27 富士電機株式会社 電力変換装置および鉄道車両用電力変換装置
US10411609B2 (en) * 2017-12-22 2019-09-10 Panasonic Intellectual Property Management Co., Ltd. Substrate mounted inverter device
WO2020261433A1 (ja) * 2019-06-26 2020-12-30 三菱電機株式会社 半導体装置および電力変換装置
FR3131503A1 (fr) * 2021-12-28 2023-06-30 Thales Composant de puissance à filtrage local et convertisseur mettant en œuvre plusieurs composants de puissance à filtrage local
CN119234308A (zh) * 2022-05-19 2024-12-31 华为数字能源技术有限公司 具有共模传导发射屏蔽的功率转换器封装件
JP2024015805A (ja) * 2022-07-25 2024-02-06 マツダ株式会社 スイッチングデバイスおよびスイッチングモジュール

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030025196A1 (en) * 2001-08-01 2003-02-06 Hitachi, Ltd. Heat transfer structure and a semi-conductor device
CN100373604C (zh) * 2002-07-15 2008-03-05 国际整流器公司 高功率mcm封装
US20100065962A1 (en) * 2007-08-06 2010-03-18 Infineon Technologies Ag Power semiconductor module

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2777464B2 (ja) * 1990-07-18 1998-07-16 株式会社日立製作所 電子装置と、これを用いたエンジンの点火装置
DE4418426B4 (de) * 1993-09-08 2007-08-02 Mitsubishi Denki K.K. Halbleiterleistungsmodul und Verfahren zur Herstellung des Halbleiterleistungsmoduls
EP0661748A1 (en) * 1993-12-28 1995-07-05 Hitachi, Ltd. Semiconductor device
JP3429921B2 (ja) * 1995-10-26 2003-07-28 三菱電機株式会社 半導体装置
JP3649259B2 (ja) 1996-04-26 2005-05-18 株式会社安川電機 インバータ装置
JP2000031325A (ja) * 1998-07-13 2000-01-28 Hitachi Ltd 半導体パワーモジュール及びこれを用いたインバータ装置
US6747300B2 (en) * 2002-03-04 2004-06-08 Ternational Rectifier Corporation H-bridge drive utilizing a pair of high and low side MOSFETs in a common insulation housing
WO2004073065A1 (ja) * 2003-02-14 2004-08-26 Hitachi, Ltd. 半導体素子駆動用集積回路及び電力変換装置
JP2005020868A (ja) * 2003-06-25 2005-01-20 Fuji Electric Fa Components & Systems Co Ltd 電力変換回路
JP4195398B2 (ja) * 2004-01-29 2008-12-10 関西電力株式会社 半導体装置及びそれを用いた電力装置
JP2005332874A (ja) * 2004-05-18 2005-12-02 Hitachi Metals Ltd 回路基板及びこれを用いた半導体装置
US8154114B2 (en) * 2007-08-06 2012-04-10 Infineon Technologies Ag Power semiconductor module
JP5272191B2 (ja) * 2007-08-31 2013-08-28 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP5407198B2 (ja) * 2008-07-02 2014-02-05 富士電機株式会社 電力変換装置のパワーモジュール
JP5355506B2 (ja) * 2010-07-02 2013-11-27 本田技研工業株式会社 半導体装置
CN102340233B (zh) * 2010-07-15 2014-05-07 台达电子工业股份有限公司 功率模块
CN102339818B (zh) * 2010-07-15 2014-04-30 台达电子工业股份有限公司 功率模块及其制造方法
JP2012039825A (ja) * 2010-08-11 2012-02-23 Toyo Electric Mfg Co Ltd 電力変換装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030025196A1 (en) * 2001-08-01 2003-02-06 Hitachi, Ltd. Heat transfer structure and a semi-conductor device
CN100373604C (zh) * 2002-07-15 2008-03-05 国际整流器公司 高功率mcm封装
US20100065962A1 (en) * 2007-08-06 2010-03-18 Infineon Technologies Ag Power semiconductor module

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105424260B (zh) * 2014-09-17 2020-02-28 富士电机株式会社 压力传感器装置以及压力传感器装置的制造方法
CN105424260A (zh) * 2014-09-17 2016-03-23 富士电机株式会社 压力传感器装置以及压力传感器装置的制造方法
CN105529309A (zh) * 2014-10-17 2016-04-27 三菱电机株式会社 半导体装置
CN105529309B (zh) * 2014-10-17 2019-01-08 三菱电机株式会社 半导体装置
CN105720046A (zh) * 2014-12-18 2016-06-29 三菱电机株式会社 半导体模块以及半导体装置
CN105720046B (zh) * 2014-12-18 2018-07-24 三菱电机株式会社 半导体模块以及半导体装置
JP2018535553A (ja) * 2016-03-30 2018-11-29 ミツビシ・エレクトリック・アールアンドディー・センター・ヨーロッパ・ビーヴィＭｉｔｓｕｂｉｓｈｉ Ｅｌｅｃｔｒｉｃ Ｒ＆Ｄ Ｃｅｎｔｒｅ Ｅｕｒｏｐｅ Ｂ．Ｖ． 少なくとも１つのダイを備えるパワー半導体モジュールの損傷レベル又は寿命予測を推定する方法及びデバイス
CN110034100A (zh) * 2017-11-15 2019-07-19 夏普株式会社 功率半导体组件及电子设备
CN111199959A (zh) * 2018-11-19 2020-05-26 台达电子企业管理（上海）有限公司 功率模块的封装结构
CN111199959B (zh) * 2018-11-19 2021-11-02 台达电子企业管理（上海）有限公司 功率模块的封装结构
TWI735179B (zh) * 2020-03-11 2021-08-01 佳世達科技股份有限公司 電子裝置與其減低漏電流方法
CN114257061A (zh) * 2020-09-11 2022-03-29 丰田自动车株式会社 电力转换装置
CN114257061B (zh) * 2020-09-11 2024-02-20 丰田自动车株式会社 电力转换装置
CN114725055A (zh) * 2022-02-28 2022-07-08 华为数字能源技术有限公司 一种功率模块、电力系统和电子设备

Also Published As

Publication number Publication date
JP5798412B2 (ja) 2015-10-21
EP2750184B1 (en) 2020-10-07
EP2750184A4 (en) 2015-08-26
US8921998B2 (en) 2014-12-30
US20140159225A1 (en) 2014-06-12
CN103782380B (zh) 2019-12-13
EP2750184A1 (en) 2014-07-02
JP2013045974A (ja) 2013-03-04
WO2013027819A1 (ja) 2013-02-28

Similar Documents

Publication Publication Date Title
CN103782380B (zh) 半导体模块
US9685879B2 (en) Power semiconductor module and power conversion device
US8705257B2 (en) Switching module including a snubber circuit connected in parallel to a series-connected unit of flowing restriction elements
JP6513303B2 (ja) 電力用半導体モジュールおよび電力変換装置
US9116532B2 (en) Power semiconductor device module
CN110998838B (zh) 半导体模块
JP5591211B2 (ja) 電力変換装置
KR101998424B1 (ko) 반도체 모듈
JP5218541B2 (ja) スイッチングモジュール
US20090316457A1 (en) Inverter
JP6836201B2 (ja) 電力変換装置
JP6096614B2 (ja) パワー半導体モジュールおよびそれを用いた電力変換装置
WO2020158057A1 (ja) パワー半導体モジュールおよびそれを用いた電力変換装置
CN112204733A (zh) 半导体模块以及电力变换装置
CN114144965A (zh) 电路装置
CN112951819A (zh) 半导体器件模块及组装方法
WO2023042482A1 (ja) パワー半導体モジュールおよび電力変換装置
JP2007042796A (ja) 電力用半導体素子及びインバータ装置
JP5119741B2 (ja) スイッチングモジュール
JP2004187484A (ja) 電力変換器スタック構造
JP2024178741A (ja) 電気回路体および電力変換装置
WO2024053241A1 (ja) Ｄｃ／ｄｃコンバータ及び半導体機器
CN118872384A (zh) 使用印刷电路板的开关臂

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20171211

Address after: Kanagawa

Applicant after: NISSAN MOTOR Co.,Ltd.

Applicant after: FUJI ELECTRIC Co.,Ltd.

Address before: Kanagawa

Applicant before: NISSAN MOTOR Co.,Ltd.

Applicant before: Sanken Electric Co.,Ltd.

Applicant before: FUJI ELECTRIC Co.,Ltd.

GR01 Patent grant
GR01 Patent grant