CN103779330A - Test structure for monitoring circuit shorting or circuit breaking after metal technology - Google Patents
Test structure for monitoring circuit shorting or circuit breaking after metal technology Download PDFInfo
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- CN103779330A CN103779330A CN201210410222.1A CN201210410222A CN103779330A CN 103779330 A CN103779330 A CN 103779330A CN 201210410222 A CN201210410222 A CN 201210410222A CN 103779330 A CN103779330 A CN 103779330A
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Abstract
The invention discloses a test structure for monitoring circuit shorting or circuit breaking after a metal technology. The test structure comprises at least three parallel lines separated from each other for certain distance. Enclosed rectangles are formed by outer and inner metal lines, the middle metal lines present to be omega-line-shaped, and the outermost side metal lines are provided with T-shaped protrusions. The end parts of the T-shaped protrusions are arranged in the omega-shaped incurves of the middle metal lines. Meanwhile, regions of four inner angles of the innermost side rectangular metal lines are provided with four metal islands. With application of the aforementioned test structure, problems of technology defects of circuit shorting or circuit breaking after the metal technology can be effectively monitored.
Description
Technical field
The present invention relates to field of semiconductor manufacture, refer to especially the test structure that a kind of silicon chip is permitted short circuit after Acceptance Tests (WAT:Wafer Acceptance Test) monitoring smithcraft or opened circuit.
Background technology
After tradition monitoring metal etch, the short circuit structure that a situation arises often adopts comb shape structure, as shown in Figure 1, this structure is made up of metal wire 401 and metal wire 402, metal wire 401 and 402 forms respectively comb shape, be staggered, between metal wire 401 and metal wire 402, be equidistant, leakage current between test port 1 and port 2 404 can be monitored the short-circuit conditions between metal 401 and metal 402 like this, this structure can only be monitored situation about being short-circuited between vertical bar shaped metal 402a and Curved metal 401a, and the situation while only having a direction, and due to the exposure feature of mask aligner, dimension of picture deviation to some extent in X and Y direction after exposure, more there is the difference of etch topography and etching precision in X and Y direction in etching, therefore on single direction, monitor the requirement that cannot meet technique, simultaneously this structure can only be monitored short circuit and the metal that cannot effective monitoring may cause opens circuit.
Another test structure, as shown in Figure 2, between the metal wire 411 and 413 of comb shape structure, insert snakelike cabling metal wire 412, keep and metal wire 411 and 413 uniform distances, by the leakage current characteristic between test port 1 and port 3 416 or between port 2 415 and port 3 416, and the resistance characteristic between test port 3 416 and port 4 417, can be at monitoring metal wire 411 and metal wire 413, when be short-circuited situation between metal wire 412 and metal wire 413, monitoring metal wire 412 is placed on the problem that opens circuit in bending situation, but do not consider equally the directional problems of photoetching and etching, cause not comprehensive on monitoring process.Meanwhile, also have a kind of severe situation in technique is manufactured, the short-circuit conditions between metal island and metal wire cannot be tested and obtain in this structure, so still cannot effectively provide comprehensive process monitoring.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of test structure of monitoring short circuit after smithcraft or opening circuit, the defect that can effectively monitor short circuit in smithcraft or open circuit.
For addressing the above problem, short circuit or the test structure that opens circuit after monitoring smithcraft of the present invention, comprise: the metal wire of at least 3 equidistant parallel cablings, outermost and inner side metal wire surround sealing rectangle, intermetallic metal line surrounds non-sealing rectangle, and on the every limit of intermetallic metal line, all have in several fonts curved, on the every limit of respective inside metal wire, corresponding intermetallic metal line also has in several fonts of parallel equidistant curved, outside metal wire has T font projection line end, projection line end be positioned over curved in several words of intermetallic metal line in, in four interior angles of sealing rectangle that described inner side metal wire forms, all place a metal island district.
Further, the metal wire of described at least 3, in the middle of it, metal wire is three-back-shaped nonocclusive rectangle, inner side metal wire and outside metal wire are to form three-back-shaped sealing or nonocclusive rectangle.
Further, in several fonts on described intermetallic metal line, on curved every limit, be to be one, or multiple, and the corresponding increase of T font bump count of the interior curved inside and outside side metal wire of each several word, guarantee to be eachly interiorly placed with T word line end in curved, curved corresponding increase in several words of inner side metal wire simultaneously.
Further, several words of described metal wire are curved is to enclosed construction inside bend, or bending laterally.
Further, when described several words are curved while being bending laterally, T font projection line end is positioned on the metal wire of inner side and to be positioned over several words curved.
Further, described test structure is an independent use, or multiple array of lining up uses.
Further, in the time that described test structure is multiple composition arrays use, the inside and outside different layers metal wire of at least 3 in each test structure unit need to interconnect according to all outer layer metal lines in each unit, each intermetallic metal line interconnects and the structural relation of the interconnective correspondence of each inner layer metal line links together, and draws the test port of each layer of metal of all array elements.
Further, when the metal of described composition test structure figure changes polysilicon into, the defect such as can monitor equally the short circuit of polysilicon or open circuit.
Further, described test structure is to be positioned over chip region, or is positioned in scribe line area.
Short circuit or the test structure that opens circuit after monitoring smithcraft of the present invention, by the metal parallel equidistant cablings of at least 3 layers and the curved and T-shaped line end of several words is set, the short circuit metal causing under several typical mal-conditions in equal energy monitoring process in X, Y direction and the defect opening circuit, the reliability of raising technique.
Accompanying drawing explanation
Fig. 1 is conventional metals short circuit monitoring structural representation;
Fig. 2 is another conventional metals short circuit monitoring structural representation;
Fig. 3 is metal control and measuring construction unit domain of the present invention one embodiment schematic diagram;
Fig. 4 is Fig. 3 AA region partial schematic diagram;
Fig. 5 is schematic partial cross-sectional view after the etching of Fig. 3 AA region;
Fig. 6 is schematic diagram after the etching of Fig. 3 BB region;
Fig. 7 is another embodiment schematic diagram of metal control and measuring construction unit domain of the present invention.
Description of reference numerals
204a, 204b, 204c, 204d are metal island districts, the 201,202,203,401,402,403,411,412, the 413rd, and metal wire, the 101,102,103,104,121,122,123,124, the 125th, port.
Embodiment
Short circuit or the test structure that opens circuit after monitoring smithcraft of the present invention, the first embodiment as shown in Figure 3, the metal wire 201 of at least 3 equidistant parallel cablings, 202 and 203, outside metal wire 201 and inner side metal wire 203 surround sealing rectangle, intermetallic metal line 202 surrounds non-sealing rectangle, form port 2 102 and port 5 105, and on the every limit of intermetallic metal line 202, all have in several fonts curved, on the every limit of respective inside metal wire 203, corresponding intermetallic metal line 202 also has in several fonts of parallel equidistant curved, outside metal wire 201 has T font projection line end, projection line end be positioned over curved in several words of intermetallic metal line 202 in, the curved quantity of several words on every limit is 1, also can make according to actual needs multiple.In four interior angles of sealing rectangle that described inner side metal wire 203 forms, all place a metal island district 204a, 204b, 204c, 204d, form 4 ports (port four).Rectangular configuration can make test monitoring structure in X-axis and Y direction, all can have graphic monitoring.
Inner side metal wire 203 and the 202 interval S b=0.1～1 micron placements of intermetallic metal line, inner side metal wire 203 width W b=0.1～50 micron, surround closed-loop, and inner side metal wire 203 is drawn and is formed test port 3 103.
Four metal island district 204a, 204b, 204c, 204d and inner side metal wires 203 Sc=0.1～1 micron of keeping at a distance, width W d=Ld=0.1～1 micron in metal island district, four metal island district 204a, 204b, 204c, 204d are drawn to (accompanying drawing of the present invention at the middle and upper levels metal is not shown) by upper strata metal, be joined together to form test port 4 104.
By the leakage current between test port 1 and port 2 102, can monitor the curved intermetallic short-circuit conditions of T-shaped metal wire and a few word; Electric leakage between test port 2 102 and port 3 103, can monitor two curved intermetallic short-circuit conditions of several words; Test port 3 103 and port 4 104, can monitor the short-circuit conditions between the curved and metal island district of metal interior angle; The metallic resistance characteristic of test port 2 102 and port 5 105, can monitor the problem that opens circuit at close quarters metal wire.
Curved and the T word line end energy effective monitoring photoetching of curved interior placement and the problem of the short circuit that etching causes in several words, as shown in Figure 4, it is the local enlarged diagram of the curved and T-shaped cabling region AA of several words of the monitoring pattern shown in Fig. 3, dotted line represents the actual graphical after etching forms, after chemical wet etching, all can there is sphering in the place of metal wire right-angle turning, and interior exterior angle sphering has difference, interior exterior angle circular arc interval S 2 is less than metal wire separation S1, add the error of etching, be easy to cause the short circuit in this region.Therefore, the resistance between the port five shown in resolution chart 3 and port three, the just short-circuit conditions of energy observation circuit.
Meanwhile, line up the curved metal routing of several words and can also monitor the short circuit problem causing due to stress after etching.As shown in Figure 5, it is the schematic cross-section in the region of AA shown in Fig. 3, the annealing of metal wire 202 and the metal wire 203 interior angle side after etching after due to etching, can cause the variation of stress, interior angle lateral stress is comparatively concentrated, causes metal interior angle side bottom to occur bulge 304a and 304b, and the appearance of bulge can worsen the short circuit of metal, S3(or S4) <S2<S1, so the short-circuit conditions of a few word cabling under can this figure of effective monitoring.
Between outside metal wire 201 and inner side metal wire 203, placing intermetallic metal line 202 can effective monitoring photoetching and the problem that opens circuit that causes of etching.As shown in Figure 4, intermetallic metal line 202 is the metal wires that belong to close quarters, and outside metal wire 201 and inner side metal wire 203 be in half close quarters, and photoetching is different for the lithographic capabilities of close quarters and half close quarters.The live width of compact district is little easy quarter in theory, and by the situation that may have W2<W1 or W3<W1, just easily open circuit in W2 and W3 region.
As shown in Figure 3, on four angles of inner side, place metal island district 204a, 204b, 204c, 204d at the metal wire of rectangle, can monitor the short-circuit conditions between metal island district 204a, 204b, 204c, 204d and metal wire 203 by the electric leakage between test port 3 103 and port 4 104.
For the metallic pattern of island, after photoetching and etching, all can cause the variation of more serious figure, this variation is greater than the metal of ordinary straight bar shaped, reference view 3 and Fig. 6, Fig. 6 is the local enlarged diagram in test structure BB region, dotted line is the figure of metal after photoetching and etching, except metal wire 203 interior angle sides meeting spherings, the sphering of metal island 204 can cause the figure after photoetching and etching larger than master figure, thereby the 5<S2<S6 of interval S shown in making is the short circuit problem occurring in another kind of severe situation.
By such test structure, in the curved problem that causes short circuit of several words of monitoring, can monitor metal island to the curved short circuit problem of metal interior angle, can also effective monitoring explained hereafter in short circuit metal, the problem that opens circuit in the severe situation of several typical cases, and adjusting process in time according to this.
As shown in Figure 7, be that the present invention monitors short circuit metal and the another kind of domain structure of the structure that opens circuit, i.e. the second embodiment.The parameters such as its spacing setting and live width are same as the previously described embodiments, different from the domain structure shown in Fig. 3 is, this figure is non-closed-loop, to be arranged in upper and lower symmetrical structure according to X-axis mirror image, then inner side, the metal in centre and outside in order correspondence connects together, a few word cablings and T-shaped metal routing are kept equally, and medial angle is placed with metal island district formation port 4 124, at X, in Y-direction, there is identical graphic monitoring, the principle of its realization is identical with the invention described above the first embodiment, for example can monitor the short-circuit conditions between T word line style and a few word line by the leakage current between measurement port 1 and port 2 122 or port 5 125, electric leakage between test port 2 122 and port 3 123 can be monitored the short-circuit conditions of several words between curved, resistance characteristic between test port 2 122 and port 5 125 can be monitored the open circuit conditions of close quarters metal wire etc.
The structure of above-mentioned the one the second embodiment can be used separately, also can line up array and use, and lining up array can increase pattern density and improve accuracy of detection.The mode of lining up array use is that the metal wire in each test structure unit is linked together according to corresponding structural relation.The all outsides metal wire that is each test cell links together, and all intermetallic metal lines link together, and all inner sides metal wire links together, and forms total test port of each layer of metal.When metal wire, the rest may be inferred during more than 3 connects.
Test structure of the present invention, while changing metal wire into polysilicon, can monitor equally the similar short circuit occurring in polysilicon process or the defect opening circuit, its using method is identical with the test structure of above-mentioned metal wire, can use by single structure, or the mode of composition array.
Above-mentioned test structure, comprises first and second embodiment, is to be positioned over chip region, and when chip region, usable area is more nervous, or test structure is that array uses need take larger area time, also can be positioned over scribe line area.
These are only the preferred embodiments of the present invention, be not intended to limit the present invention.For a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (9)
1. the test structure monitoring short circuit after smithcraft or open circuit, is characterized in that: comprise:
The metal wire of at least 3 equidistant parallel cablings, outermost and the rectangle that inner side metal wire surrounds sealing or do not seal, intermetallic metal line surrounds non-sealing rectangle, and on the every limit of intermetallic metal line, all have in several fonts curved, on the every limit of respective inside metal wire, corresponding intermetallic metal line also has in several fonts of parallel equidistant curved, outside metal wire has T font projection line end, projection line end be positioned over curved in several words of intermetallic metal line in, in four interior angles of sealing rectangle that described inner side metal wire forms, all place a metal island district.
2. short circuit or the test structure that opens circuit after monitoring smithcraft as claimed in claim 1, it is characterized in that: the described metal wire of at least 3, in the middle of it, metal wire is three-back-shaped nonocclusive rectangle, and inner side metal wire and outside metal wire are to form three-back-shaped sealing or nonocclusive rectangle.
3. short circuit or the test structure that opens circuit after monitoring smithcraft as claimed in claim 1, it is characterized in that: curved in several fonts on the described every limit of intermetallic metal line is to arrange one, or multiple, and the corresponding increase of T font bump count on the every limit of outside metal wire, to guarantee the each interior T word line end that is placed with outside metal wire in curved of intermetallic metal line; Simultaneously in several words of inner side metal wire curved with the corresponding increase of intermetallic metal line with the equidistant cabling of keeping parallelism.
4. short circuit or the test structure that opens circuit after monitoring smithcraft as claimed in claim 3, is characterized in that: described several words of intermetallic metal line are curved is the inside bend to enclosed construction, or bending laterally.
5. short circuit or the test structure that opens circuit after monitoring smithcraft as claimed in claim 4, it is characterized in that: when several fonts of described intermetallic metal line are curved while being bending laterally, T font projection line end is positioned on the metal wire of inner side and to be positioned over several words of intermetallic metal line curved.
6. short circuit or the test structure that opens circuit after monitoring smithcraft as claimed in claim 1, is characterized in that: described test structure is an independent use, or multiple array of lining up uses.
7. short circuit or the test structure that opens circuit after monitoring smithcraft as claimed in claim 6, it is characterized in that: in the time that described test structure is multiple composition arrays use, the inside and outside different layers metal wire of at least 3 in each test structure unit need to interconnect according to all outer layer metal lines in each unit, each intermetallic metal line interconnects and the structural relation of the interconnective correspondence of each inner layer metal line links together, and draws the test port of each layer of metal of all array elements.
8. short circuit or the test structure that opens circuit after monitoring smithcraft as claimed in claim 1, is characterized in that: when the metal of described composition test structure pattern line changes polysilicon into, can monitor equally short circuit or the open defect of polysilicon.
9. short circuit or the test structure that opens circuit after monitoring smithcraft as claimed in claim 1, is characterized in that: described test structure is to be positioned over chip region, or is positioned in scribe line area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210410222.1A CN103779330A (en) | 2012-10-24 | 2012-10-24 | Test structure for monitoring circuit shorting or circuit breaking after metal technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210410222.1A CN103779330A (en) | 2012-10-24 | 2012-10-24 | Test structure for monitoring circuit shorting or circuit breaking after metal technology |
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| Publication Number | Publication Date |
|---|---|
| CN103779330A true CN103779330A (en) | 2014-05-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210410222.1A Pending CN103779330A (en) | 2012-10-24 | 2012-10-24 | Test structure for monitoring circuit shorting or circuit breaking after metal technology |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107817438A (en) * | 2017-09-15 | 2018-03-20 | 郑州云海信息技术有限公司 | A kind of golden finger interface of simulating aoxidizes the method for testing and device for causing hardware error |
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| CN1953173A (en) * | 2005-10-19 | 2007-04-25 | 国际商业机器公司 | Wiring test structures for determining open and short circuits in semiconductor devices and forming method of the same |
| CN1975994A (en) * | 2005-11-29 | 2007-06-06 | 国际商业机器公司 | Method of detecting defect evoked by processing image |
| DE102006045131A1 (en) * | 2006-09-25 | 2008-03-27 | Qimonda Ag | Die has strip conductor test structure, which has two conductive structures, arranged for detecting short-circuit damage between two conductive structures |
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2012
- 2012-10-24 CN CN201210410222.1A patent/CN103779330A/en active Pending
Patent Citations (8)
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|---|---|---|---|---|
| US6294397B1 (en) * | 1999-03-04 | 2001-09-25 | Advanced Micro Devices, Inc. | Drop-in test structure and abbreviated integrated circuit process flow for characterizing production integrated circuit process flow, topography, and equipment |
| US6452412B1 (en) * | 1999-03-04 | 2002-09-17 | Advanced Micro Devices, Inc. | Drop-in test structure and methodology for characterizing an integrated circuit process flow and topography |
| US6362634B1 (en) * | 2000-01-14 | 2002-03-26 | Advanced Micro Devices, Inc. | Integrated defect monitor structures for conductive features on a semiconductor topography and method of use |
| TW544830B (en) * | 2000-06-27 | 2003-08-01 | Agere Syst Guardian Corp | A method of testing an integrated circuit |
| US20050122123A1 (en) * | 2002-03-27 | 2005-06-09 | Stine Brian E. | Zoom in pin nest structure, test vehicle having the structure, and method of fabricating the structure |
| CN1953173A (en) * | 2005-10-19 | 2007-04-25 | 国际商业机器公司 | Wiring test structures for determining open and short circuits in semiconductor devices and forming method of the same |
| CN1975994A (en) * | 2005-11-29 | 2007-06-06 | 国际商业机器公司 | Method of detecting defect evoked by processing image |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107817438A (en) * | 2017-09-15 | 2018-03-20 | 郑州云海信息技术有限公司 | A kind of golden finger interface of simulating aoxidizes the method for testing and device for causing hardware error |
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Application publication date: 20140507 |