CN104051427B - A kind of contact hole resistance test structure and method - Google Patents
A kind of contact hole resistance test structure and method Download PDFInfo
- Publication number
- CN104051427B CN104051427B CN201310078658.XA CN201310078658A CN104051427B CN 104051427 B CN104051427 B CN 104051427B CN 201310078658 A CN201310078658 A CN 201310078658A CN 104051427 B CN104051427 B CN 104051427B
- Authority
- CN
- China
- Prior art keywords
- contact hole
- active area
- resistance
- string
- column
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000005530 etching Methods 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000010998 test method Methods 0.000 claims description 8
- 229910000831 Steel Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000010959 steel Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 4
- 241000784303 Ochrosia compta Species 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- SJHPCNCNNSSLPL-CSKARUKUSA-N (4e)-4-(ethoxymethylidene)-2-phenyl-1,3-oxazol-5-one Chemical compound O1C(=O)C(=C/OCC)\N=C1C1=CC=CC=C1 SJHPCNCNNSSLPL-CSKARUKUSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention provides a kind of contact hole resistance test structure and method, this test structure includes: the active area being formed in Semiconductor substrate, described active area includes that at least string the first active area and at least string the second active area, string the first active area and string the second active area are spaced；Described each column the first active area is respectively arranged at two ends with contact hole, and each column the first active area is connected with adjacent column the first active area by contact hole and formed cascaded structure, and the two ends of described cascaded structure are test port；Described each column the second active area is provided with virtual grid, and these virtual grid are for ensureing that the technique load testing contact hole in structure is similar to the technique load of contact hole in tested structure.The contact hole resistance that the present invention provides tests structure and method, the contact hole resistance obtained in test structure i.e. reflects the resistance of contact hole in actual cell, avoiding the contact hole of actual cell when open circuit or over etching, the resistance of test structure still shows normal situation.
Description
Technical field
The present invention relates to a kind of technical field of semiconductors, particularly relate to a kind of contact hole resistance test structure and method.
Background technology
In electron tunneling oxide layer (EPROM Tunneling Oxide, ETOX) flush memory device, before contact hole is connection
Road transistor and the passage of rear road metal wiring, should connect grid, be connected to source electrode and drain electrode again, and it is good with bad that it etches
Directly influence the characteristic of flush memory device and the yield of product.Therefore, in the manufacturing process of flush memory device, contact hole etching work
Skill is to be rich in a challenging technique, especially when the manufacture of flush memory device develop into 65nm the least time, contact hole carve
After having lost, the detection to its resistance becomes the most crucial.
Tradition is used for testing the test structure of contact hole resistance and uses on-link mode (OLM), as it is shown in figure 1, at active area 3A
Two ends are respectively provided with a contact hole 1A, then connect with metal wire 2A and next unit, are together in series by the mode of link,
Afterwards by the way of applying voltage survey electric current at the two ends of series connection, draw the resistance of total, at the number divided by contact hole
Amount, it is possible to obtain a resistance value, this resistance value adds between two contact hole 1A active equal to the resistance of single contact hole
The half of district's 3A resistance, by calculating the resistance that just can get single contact hole 1A.But found by practice, this traditional
Test structure can not record the resistance of contact hole in actual flash cell exactly, when the contact hole of actual cell is at open circuit
(Open) or during over etching (Over etch), wafer acceptance test (Wafer Acceptance Test, WAT) structure
Resistance data shows the most normal, and as shown in Figures 2 and 3, Fig. 2 is the transmission electron microscope TEM section shape of actual cell
Looks, Fig. 3 is traditional test structure transmission electron microscope TEM section pattern, it can be seen that the etching resistance of contact hole 1B in reality
The thickness of barrier 6B silicon nitride only has about 2.7nm, contact hole 1B over etching to enter active area 3B about 32nm, and tests knot
It is 18nm that the thickness of section display its etching barrier layer 6A of structure be about 6.3nm, contact hole 1A to be etched with the degree of depth of source region 3A, carves
Erosion degree of depth difference is the most big, and the resistance of contact hole also has significant difference, and therefore, this traditional test structure can not be used again
In detecting this important manufacturing process.For the detection of the contact hole resistance of ETOX flash cell, flash cell itself is not
Can bring as resistance test structure, because a contact hole is on source electrode or drain electrode in actual cell, another contact hole exists
On grid, no current path between two contact holes.
Therefore, detecting the resistance of contact hole in flash cell the most more accurately is that those skilled in the art need to solve
Problem.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of contact hole resistance test structure
And method, for solving the problem that in prior art, the detection of flash cell contact hole resistance is not accurate enough.
For achieving the above object and other relevant purposes, the present invention provides a kind of contact hole resistance test structure, described survey
Examination structure at least includes:
The active area being formed in Semiconductor substrate, described active area includes at least string the first active area and at least string
Second active area, string the first active area and string the second active area are spaced；
Described each column the first active area is respectively arranged at two ends with contact hole, and each column the first active area passes through contact hole and adjacent column
First active area series connection forms cascaded structure, and the two ends of described cascaded structure are test port；
Described each column the second active area is provided with virtual grid, and these virtual grid are for ensureing to test contact hole in structure
Technique load is similar to the technique load of contact hole in tested structure.
Preferably, every string the first active area includes at least one sub first active area, the two of every height the first active area
End is equipped with contact hole.
Preferably, on every height the first active area, contact hole passes through metal wire and the contact hole on adjacent sub first active area
Being connected, described metal wire is aluminum steel or copper cash.
Preferably, the scribe line area that described test structure is arranged on wafer.
Preferably, it is provided with shallow trench isolation regions between described first active area and the second active area.
The present invention also provides for a kind of contact hole resistance method of testing, and described method of testing at least includes step:
Apply voltage V at the two ends of cascaded structure, described cascaded structure is to be respectively arranged at two ends with at each column the first active area
Contact hole, each column the first active area is connected with adjacent column the first active area by contact hole and is formed cascaded structure, records whole string
The current value of connection structure is Id；
The resistance of whole cascaded structure is obtained by Ohm's law
The resistance of whole cascaded structure is again
Wherein, N is the number of contact hole, RcFor the resistance of single contact hole, RaaIt is the resistance of the first active area, obtains list
The resistance of individual contact hole I.e.
Preferably, etching technics is used to form contact hole on described first active area.
Preferably, every string the first active area includes at least one sub first active area, the two of every height the first active area
End is equipped with contact hole.
Preferably, on every height the first active area, contact hole passes through metal wire and the contact hole on adjacent sub first active area
Being connected, described metal wire is aluminum steel or copper cash.
As it has been described above, the contact hole resistance test structure of the present invention and method, have the advantages that by active
Arranging virtual grid in district, the technique load making test structure is similar to the load of the technique of unitunder test structure, so, and test knot
The contact hole resistance obtained in structure i.e. reflects the resistance of contact hole in actual cell, it is to avoid the contact hole of actual cell is being opened
When road or over etching, the resistance of test structure still shows normal situation.
Accompanying drawing explanation
Fig. 1 is shown as traditional contact hole test structural representation.
Fig. 2 is shown as section TEM figure during actual cell structure contact hole over etching.
Fig. 3 is shown as the section TEM figure of traditional test structure contact hole.
Fig. 4 a is shown as the contact hole test structural representation of the present invention.
Fig. 4 b is shown as the contact hole test structure profile along AA ' direction of the present invention.
Fig. 4 c is shown as the contact hole test structure profile along BB ' direction of the present invention.
Fig. 5 is shown as the section TEM figure of actual cell structure contact hole.
Fig. 6 is shown as the section TEM figure of the test structure contact hole of the present invention.
Element numbers explanation
1,1A, 1B contact hole
2,2A metal wire
3,3A, 3B active area
31 first active areas
32 second active areas
4 virtual grid
5 shallow trench isolation regions
6,6A, 6B etching barrier layer
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also be by the most different concrete realities
The mode of executing is carried out or applies, the every details in this specification can also based on different viewpoints and application, without departing from
Various modification or change is carried out under the spirit of the present invention.
Refer to accompanying drawing.It should be noted that the diagram provided in the present embodiment illustrates the present invention the most in a schematic way
Basic conception, the most graphic in component count time only display with relevant assembly in the present invention rather than is implemented according to reality, shape
Shape and size are drawn, and during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random change, and its assembly cloth
Office's kenel is likely to increasingly complex.
The present invention provides a kind of contact hole resistance test structural approach, and this contact hole test structure at least includes source region 3
(Active Area, AA), contact hole 1(Connect, CT) and virtual grid 4(Dummy Control Gate, Dummy CG), please
See Fig. 4 a and Fig. 4 b.
Described active area 3 is formed in Semiconductor substrate, and Semiconductor substrate described here includes N-type or P-type semiconductor silicon
Substrate, in the present embodiment, described Semiconductor substrate is N-type semiconductor silicon substrate.Described active area 3 includes that at least string first has
Source region 31 and at least string the second active area 32, and string the first active area 31 and string the second active area 32 be spaced, as
Shown in Fig. 4 b.Described first active area 31 and the second active area 32 are all p-type, and the ion of injection is boron.
A kind of as the present invention optimizes structure, is provided with shallow trench isolation between described first active area and the second active area
District 5, is used for isolating active area 3, prevents from leaking electricity between active area 3.
Described contact hole 1 is located at the two ends of each column the first active area 31, and each column the first active area 31 is by described contact hole 1
Connecting with the first active area 31 of adjacent column and form cascaded structure, the two ends of this cascaded structure are the test lead of test structure
Mouthful.Preferably, every string the first active area 31 includes at least one sub first active area, and the two ends of every height the first active area
It is designed with contact hole 1.In the present embodiment, described first active area 31 is divided into five row, every string the first active area 31 to include two
Height the first active area.Further, the contact hole 1 on every height the first active area is by metal wire 2 and adjacent sub
Contact hole 1 on one active area 31 is connected.Further, described metal wire 2 is aluminum steel or copper cash, but is not limited to this.This
In embodiment, described metal wire 2 uses aluminum steel.
Described contact hole 2 uses etching technics and is formed on described first active area 31, has first before etching
Deposited one layer of etching barrier layer 6 in source region 31, in the present embodiment, etching barrier layer 6 is silicon nitride SiN, but is not limited to this.
To stop on the first active area 31 when contact hole 1 etching wears etching barrier layer 6, if etching barrier layer 6 is the thinnest, contact hole
1 is easy to etched many and causes the first active area 31 over etching, and the resistance of contact hole 1 also can increase accordingly.
Described virtual grid 4 are located on each column the second active area 32, and these virtual grid 4 are same as ensureing contact hole 1 in test structure
Technique load with in tested structure contact hole 1B technique load similar.Wherein, described tested structure is actual sudden strain of a muscle
Memory cell structure, additionally, structure would generally be tested in the periphery manufacture of tested structure, tests actual list by this test structure
The technological parameter of unit.Preferably, the scribe line area that described test structure is arranged on wafer.The load of described technique and contact hole
Etching technics relevant, in described test structure contact hole 1 technique load with tested structure in contact hole 1B technique bear
Carry similar referring to and, if actual flash cell contact hole 1B occurs over etching in process, test the contact hole of structure the most accordingly
1 also can occur over etching；If actual flash cell contact hole 1B opens a way, the contact hole 1 testing structure accordingly is also opened
Road；If actual flash cell contact hole 1B etching is normal, the contact hole 1 testing structure the most accordingly is also normal, thus just protects
Demonstrate,prove test structure and can be accurately detected the contact hole 1B resistance of actual flash cell, do not have the biggest error.
It should be noted that in order to ensure to keep consistent with actual flash memory unit structure, described second active area 32 is with empty
Intend also having between grid 4 structures such as floating boom, tunnel oxide layer, side wall, figure is not drawn into.
Respectively actual cell structure contact hole and the present invention test the section TEM of structure contact hole as shown in Figure 5 and Figure 6
Figure, result display actual cell structure is similar with the pattern of test structure, etching barrier layer 6B in the section of actual cell structure
Thickness be about 7.5nm, and test the thickness of etching barrier layer 6 in the section of structure and be about 7.1nm, and both etching depths
Also differing the least, data are the most close, show that contact hole 1 resistance of described test structure can reflect actual flash memory list exactly
The resistance of the contact hole 1B of meta structure.
The present invention also provides for a kind of contact hole resistance method of testing, for obtaining the resistance of above-mentioned test structure, described survey
Method for testing at least comprises the following steps:
Apply voltage V at the two ends of cascaded structure, described cascaded structure is to set respectively at each column the first active area 31 two ends
Having contact hole 1, each column the first active area 31 is connected with adjacent column the first active area 31 by contact hole 1 and is formed cascaded structure, surveys
The current value obtaining whole cascaded structure is Id；The resistance of whole cascaded structure is obtained by Ohm's lawWhole tandem junction
The resistance of structure is againWherein, N is the number of contact hole, RcFor the resistance of single contact hole, RaaIt is
The resistance of one active area, obtains the resistance of single contact holeI.e.
In the present embodiment, described first active area 31 is divided into five row, each shows two son the first active areas, every height
The two ends of one active area are provided with contact hole 1, i.e. contact hole 1 number and are altogether 20, and contact hole 1 resistance is
Further, etching technics is used to form contact hole 1, every height the first active area on described first active area 31
Upper contact hole is connected with the contact hole 1 on adjacent sub first active area by metal wire 2, and described metal wire 2 is aluminum steel or copper cash.
Be the accompanying drawing 4a profile along BB ' direction as illustrated in fig. 4 c, it is understood that be the first active area 31 be string, son
First active area is the situation of, and in this case, the number of contact hole 1 is two, i.e. N value is 2, if at cascaded structure
Test port add the voltage of 1V, the most above-mentioned contact hole resistance isRaaIt is the first active area resistance, for
The fixed value known.
In sum, the present invention provides a kind of contact hole resistance test structure and method, by setting on the second active area
Putting virtual grid, the technique load making test structure is similar to the load of the technique of unitunder test structure, so, obtains in test structure
Contact hole resistance i.e. reflect the resistance of contact hole in actual cell, it is to avoid the contact hole of actual cell is in open circuit or mistake
During etching, the resistance of test structure still shows normal situation.
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any ripe
Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage knowing this technology.Cause
This, have usually intellectual such as complete with institute under technological thought without departing from disclosed spirit in art
All equivalences become are modified or change, and must be contained by the claim of the present invention.
Claims (9)
1. a contact hole resistance test structure, it is characterised in that described test structure at least includes:
The active area being formed in Semiconductor substrate, described active area includes at least string the first active area and at least string second
Active area, string the first active area and string the second active area are spaced；
Each column the first active area is respectively arranged at two ends with contact hole, and each column the first active area is active with adjacent column first by contact hole
District's series connection forms cascaded structure, and the two ends of described cascaded structure are test port；
Each column the second active area is provided with virtual grid, and these virtual grid are for ensureing to test the technique load of contact hole in structure
Similar to the technique load of contact hole in tested structure.
Contact hole resistance the most according to claim 1 test structure, it is characterised in that: every string the first active area include to
Few son first active area, the two ends of every height the first active area are equipped with contact hole.
Contact hole resistance the most according to claim 2 test structure, it is characterised in that: contact on every height the first active area
Hole is connected with the contact hole on adjacent sub first active area by metal wire, and described metal wire is aluminum steel or copper cash.
Contact hole resistance the most according to claim 1 test structure, it is characterised in that: described test structure is arranged at wafer
On scribe line area.
Contact hole resistance the most according to claim 1 test structure, it is characterised in that: described first active area and second has
Shallow trench isolation regions it is provided with between source region.
6. a contact hole resistance method of testing, it is characterised in that described method of testing at least includes step:
Apply voltage V at the two ends of cascaded structure, described cascaded structure is to be respectively arranged at two ends with contact at each column the first active area
Hole, each column the first active area is connected with adjacent column the first active area by contact hole and is formed cascaded structure, records whole tandem junction
The current value of structure is Id；
The resistance of whole cascaded structure is obtained by Ohm's law
The resistance of whole cascaded structure is again
Wherein, N is the number of contact hole, RcFor the resistance of single contact hole, RaaIt is the resistance of the first active area, obtains single connecing
The resistance of contact holeI.e.
Contact hole resistance method of testing the most according to claim 6, it is characterised in that: use etching technics described first
Contact hole is formed on active area.
Contact hole resistance method of testing the most according to claim 6, it is characterised in that: every string the first active area include to
Few son first active area, the two ends of every height the first active area are equipped with contact hole.
Contact hole resistance method of testing the most according to claim 8, it is characterised in that: contact on every height the first active area
Hole is connected with the contact hole on adjacent sub first active area by metal wire, and described metal wire is aluminum steel or copper cash.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310078658.XA CN104051427B (en) | 2013-03-13 | 2013-03-13 | A kind of contact hole resistance test structure and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310078658.XA CN104051427B (en) | 2013-03-13 | 2013-03-13 | A kind of contact hole resistance test structure and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104051427A CN104051427A (en) | 2014-09-17 |
| CN104051427B true CN104051427B (en) | 2016-12-28 |
Family
ID=51504076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310078658.XA Active CN104051427B (en) | 2013-03-13 | 2013-03-13 | A kind of contact hole resistance test structure and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104051427B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289250B (en) * | 2019-05-16 | 2020-11-24 | 上海华力集成电路制造有限公司 | Wafer acceptance test pattern for source-side via resistance of flash memory |
| CN112928038B (en) * | 2021-01-25 | 2022-06-17 | 长江存储科技有限责任公司 | Detection method |
| CN113009226B (en) * | 2021-02-03 | 2022-08-30 | 长江存储科技有限责任公司 | Method and device for obtaining contact resistance |
| CN113161322B (en) * | 2021-04-22 | 2022-09-30 | 广州粤芯半导体技术有限公司 | Electrical property test structure |
| CN114300441B (en) * | 2021-11-30 | 2025-03-14 | 上海华力集成电路制造有限公司 | Inter-gate film merging WAT test structure and detection method |
| CN114999953A (en) * | 2022-06-21 | 2022-09-02 | 上海华力集成电路制造有限公司 | WAT electrical property test layout |
| CN115117024B (en) * | 2022-06-29 | 2025-02-07 | 上海华虹宏力半导体制造有限公司 | Test structure and manufacturing method and test method thereof |
| CN116230575B (en) * | 2023-04-26 | 2023-09-29 | 长鑫存储技术有限公司 | Semiconductor test structure and semiconductor parameter test method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101673728A (en) * | 2009-08-21 | 2010-03-17 | 上海宏力半导体制造有限公司 | Model and method for measuring resistance of contact holes or through holes in bipolar transistor components |
| CN102890195A (en) * | 2011-07-20 | 2013-01-23 | 上海华虹Nec电子有限公司 | Structure and method for testing resistances of contact holes on same type active region with substrate |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07211759A (en) * | 1994-01-25 | 1995-08-11 | Fujitsu Ltd | Semiconductor device testing method |
| KR100555504B1 (en) * | 2003-06-27 | 2006-03-03 | 삼성전자주식회사 | Test structure of semiconductor device capable of detecting defect size and test method using the same |
-
2013
- 2013-03-13 CN CN201310078658.XA patent/CN104051427B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101673728A (en) * | 2009-08-21 | 2010-03-17 | 上海宏力半导体制造有限公司 | Model and method for measuring resistance of contact holes or through holes in bipolar transistor components |
| CN102890195A (en) * | 2011-07-20 | 2013-01-23 | 上海华虹Nec电子有限公司 | Structure and method for testing resistances of contact holes on same type active region with substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104051427A (en) | 2014-09-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104051427B (en) | A kind of contact hole resistance test structure and method | |
| US9869713B2 (en) | Through-silicon via (TSV) crack sensors for detecting TSV cracks in three-dimensional (3D) integrated circuits (ICs) (3DICs), and related methods and systems | |
| US10079187B2 (en) | Semiconductor devices and methods for testing a gate insulation of a transistor structure | |
| CN103094253B (en) | A kind of grid oxide layer test structure | |
| US9093335B2 (en) | Calculating carrier concentrations in semiconductor Fins using probed resistance | |
| CN104658940B (en) | A kind of measurement structure of fin field-effect transistor electrology characteristic | |
| CN107346752A (en) | Semi-conductor test structure and forming method thereof and method of testing | |
| CN105161136B (en) | A kind of flush memory device test structure and its manufacturing method | |
| CN103887283B (en) | Residual polycrystalline silicon monitoring of structures | |
| CN103107163B (en) | Semiconductor test structure and forming method and testing method thereof | |
| CN110335861A (en) | A kind of semiconductor devices and preparation method thereof | |
| CN105990357B (en) | Semiconductor devices and preparation method, the test structure of semiconductor devices and method | |
| CN102142383B (en) | Method for detecting positions of wells | |
| CN205248238U (en) | Reliability test structure | |
| CN104103628B (en) | Test structure for transistor overlap capacitance and test method thereof | |
| CN206471330U (en) | Semi-conductor test structure | |
| CN105097782B (en) | A kind of the test structure and test method of gate oxide integrity | |
| CN203910786U (en) | Semiconductor testing structure | |
| CN105118794A (en) | Structure for testing contact resistance of sharing contact holes of SRAM and polycrystalline silicon | |
| CN102779810B (en) | Metal oxide semiconductor test structure and method of forming the same | |
| CN106531720B (en) | Leakage tests structure and crystal circle structure | |
| CN103872018A (en) | Test structure for integrity of MOS transistor array gate oxide layer | |
| CN110289250B (en) | Wafer acceptance test pattern for source-side via resistance of flash memory | |
| CN112864036B (en) | Test method and device | |
| CN103915415A (en) | Reliability analysis test structure for integrated circuit and test method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |