CN103531914B - Based on the high-rder mode resonant slot antenna of hexagon substrate integration wave-guide - Google Patents
Based on the high-rder mode resonant slot antenna of hexagon substrate integration wave-guide Download PDFInfo
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Abstract
Description
技术领域technical field
本发明涉及微波毫米波天线技术领域,具体涉及一种基于六边形基片集成波导的高阶模谐振缝隙天线。The invention relates to the technical field of microwave and millimeter wave antennas, in particular to a high-order mode resonant slot antenna based on a hexagonal substrate integrated waveguide.
背景技术Background technique
传统的金属波导腔体缝隙天线具有主瓣宽度窄、辐射效率高、增益高和波束指向固定等优点,广泛应用于微波毫米波雷达和通信系统之中。完整的金属波导腔体缝隙天线系统由多个金属波导组成,在其中一部分终端短路的波导壁上刻蚀缝隙形成辐射单元,另一部分波导作为馈电网络。但是传统的金属波导腔体缝隙天线也存在设计困难、体积大、重量重、成本高、加工和平面集成困难等问题。The traditional metal waveguide cavity slot antenna has the advantages of narrow main lobe width, high radiation efficiency, high gain and fixed beam pointing, etc., and is widely used in microwave and millimeter wave radar and communication systems. A complete metal waveguide cavity slot antenna system is composed of multiple metal waveguides. Slits are etched on the wall of some of the waveguides whose terminals are short-circuited to form a radiation unit, and the other part of the waveguides is used as a feed network. However, the traditional metal waveguide cavity slot antenna also has problems such as difficult design, large volume, heavy weight, high cost, and difficulty in processing and planar integration.
基片集成波导的传播特性与矩形金属波导类似,利用基片集成波导技术构成的缝隙天线,有着与传统金属波导腔体缝隙天线相似的性能。但是现有的基于六边形基片集成波导缝隙天线激励的谐振模式一般较低导致辐射缝隙较少,一般只有一个缝隙,无法实现对多个辐射缝隙的同相馈电,而高阶模式激励困难且易受干扰模式影响,因而获得高增益与理想方向图较为困难。The propagation characteristics of the substrate-integrated waveguide are similar to those of the rectangular metal waveguide. The slot antenna formed by the substrate-integrated waveguide technology has similar performance to the traditional metal waveguide cavity slot antenna. However, the resonance modes excited by the existing integrated waveguide slot antennas based on hexagonal substrates are generally low, resulting in fewer radiation slots. Generally, there is only one slot, and it is impossible to feed multiple radiation slots in the same phase, and it is difficult to excite high-order modes. And it is easily affected by interference mode, so it is difficult to obtain high gain and ideal pattern.
发明内容Contents of the invention
本发明所要解决的技术问题是提供一种能够实现对两条弯折辐射缝隙同相馈电的基于六边形基片集成波导的高阶模谐振缝隙天线。The technical problem to be solved by the present invention is to provide a high-order mode resonant slot antenna based on a hexagonal substrate integrated waveguide that can realize in-phase feeding to two bent radiation slots.
本发明解决上述技术问题所采用的技术方案是:该基于六边形基片集成波导的高阶模谐振缝隙天线,包括介质基板以及设置在介质基板表面的上表面金属层、下表面金属层,所述介质基板上设置有贯穿于介质基板的金属化通孔阵列,所述金属化通孔阵列与上表面金属层、下表面金属层共同围成一个六边形基片集成波导腔体,在上表面金属层上刻蚀有T形共地共面波导输入端,在下表面金属层上刻蚀有两条弯折辐射缝隙,分别为第一弯折辐射缝隙、第二弯折辐射缝隙,所述第一弯折辐射缝隙、第二弯折辐射缝隙以六边形基片集成波导腔体的腔体中心点对称设置,所述第一弯折缝隙包括第一水平缝隙以及从第一水平缝隙的两端斜向上延伸的两个第一倾斜缝隙,所述第一倾斜缝隙与第一水平缝隙的夹角为钝角并且连接在第一水平缝隙两端的两个第一倾斜缝隙沿第一水平缝隙的中垂线对称设置,所述第二弯折缝隙包括第二水平缝隙以及从第二水平缝隙的两端斜向下延伸的两个第二倾斜缝隙,所述第二倾斜缝隙与第二水平缝隙的夹角为钝角并且连接在第二水平缝隙两端的两个第二倾斜缝隙沿第二水平缝隙的中垂线对称设置,所述T形共地共面波导输入端跨过第一水平缝隙,T形共地共面波导输入端的弯折处到基准线之间的距离为六边形基片集成波导腔体的腔体中心到基准线距离的2/3,所述基准线与第一水平缝隙平行并且过位于第一水平缝隙下方的金属化通孔的中心。The technical solution adopted by the present invention to solve the above technical problems is: the high-order mode resonant slot antenna based on the hexagonal substrate integrated waveguide includes a dielectric substrate and an upper surface metal layer and a lower surface metal layer arranged on the surface of the dielectric substrate. The dielectric substrate is provided with a metallized through-hole array penetrating through the dielectric substrate. The metallized through-hole array, the upper surface metal layer and the lower surface metal layer together form a hexagonal substrate integrated waveguide cavity. A T-shaped co-ground coplanar waveguide input end is etched on the metal layer, and two bent radiation slots are etched on the metal layer on the lower surface, which are respectively the first bent radiation slot and the second bent radiation slot. A bent radiation slot and a second bent radiation slot are arranged symmetrically with the cavity center point of the hexagonal substrate integrated waveguide cavity, the first bent slot includes a first horizontal slot and two horizontal slots from the first horizontal slot Two first inclined slits extending obliquely upward at the ends, the angle between the first inclined slit and the first horizontal slit is an obtuse angle, and the two first inclined slits connected to the two ends of the first horizontal slit are along the middle The vertical line is arranged symmetrically, the second bending slit includes a second horizontal slit and two second inclined slits extending obliquely downward from both ends of the second horizontal slit, and the second inclined slit and the second horizontal slit The included angle is an obtuse angle and the two second inclined slots connected to the two ends of the second horizontal slot are arranged symmetrically along the mid-perpendicular line of the second horizontal slot, and the input end of the T-shaped common-ground coplanar waveguide straddles the first horizontal slot, T The distance between the bending point of the input end of the shape-coplanar waveguide and the reference line is 2/3 of the distance from the cavity center of the hexagonal substrate integrated waveguide cavity to the reference line, and the reference line and the first horizontal gap Parallel to and passing through the center of the metallized through-hole located under the first horizontal slit.
进一步的是,所述六边形基片集成波导腔体的高度为天线中心工作频率对应真空波长的六十分之一。Further, the height of the hexagonal substrate-integrated waveguide cavity is one sixtieth of the vacuum wavelength corresponding to the central operating frequency of the antenna.
进一步的是,所述第一弯折辐射缝隙、第二弯折辐射缝隙的缝隙尺寸均相同。Further, the slit sizes of the first curved radiation slot and the second curved radiation slot are the same.
进一步的是,所述介质基板采用相对介电常数为2.2,厚度为0.508mm的Rogers5880介质板。Further, the dielectric substrate is a Rogers5880 dielectric board with a relative permittivity of 2.2 and a thickness of 0.508 mm.
本发明的有益效果:通过在上表面金属层上刻蚀有T形共地共面波导输入端,在下表面金属层上刻蚀有两条弯折辐射缝隙,分别为第一弯折辐射缝隙、第二弯折辐射缝隙,所述第一弯折辐射缝隙、第二弯折辐射缝隙以六边形基片集成波导腔体的腔体中心点对称设置,所述第一弯折辐射缝隙包括第一水平缝隙以及从第一水平缝隙的两端斜向上延伸的两个第一倾斜缝隙,所述第一倾斜缝隙与第一水平缝隙的夹角为钝角并且连接在第一水平缝隙两端的两个第一倾斜缝隙沿第一水平缝隙的中垂线对称设置,所述第二弯折辐射缝隙包括第二水平缝隙以及从第二水平缝隙的两端斜向下延伸的两个第二倾斜缝隙,所述第二倾斜缝隙与第二水平缝隙的夹角为钝角并且连接在第二水平缝隙两端的两个第二倾斜缝隙沿第二水平缝隙的中垂线对称设置,所述T形共地共面波导输入端跨过第一水平缝隙,T形共地共面波导输入端的弯折处到基准线之间的距离为六边形基片集成波导腔体的腔体中心到基准线距离的2/3,利用T形共地共面波导输入端可以实现平面微带电路结构与六边形基片集成波导腔体结构的过渡和阻抗匹配,并激励起中心工作频率附近六边形基片集成波导腔体内TM110模式场分布,从而实现对两条弯折辐射缝隙的同相馈电,而且两条相向对称弯折辐射缝隙的应用减小了天线的横向尺寸,从而实现天线的小型化设计,提高了现代微波毫米波系统的集成度,另外,该基于六边形基片集成波导的高阶模谐振缝隙天线可采用成熟的PCB技术制造,具有成本低、精度高、重复性好、易加工、易平面集成的特点,可实现批量化生产制造。Beneficial effects of the present invention: by etching a T-shaped co-ground coplanar waveguide input end on the metal layer on the upper surface, two bending radiation slits are etched on the metal layer on the lower surface, which are respectively the first bending radiation slit, The second bent radiation slot, the first bent radiation slot and the second bent radiation slot are arranged symmetrically with the cavity center of the hexagonal substrate integrated waveguide cavity, and the first bent radiation slot includes the first bent radiation slot A horizontal slit and two first inclined slits extending obliquely upward from both ends of the first horizontal slit, the angle between the first inclined slit and the first horizontal slit is an obtuse angle and the two ends connected to the first horizontal slit The first inclined slits are arranged symmetrically along the vertical line of the first horizontal slit, and the second bent radial slit includes a second horizontal slit and two second inclined slits extending obliquely downward from both ends of the second horizontal slit, The included angle between the second inclined slit and the second horizontal slit is an obtuse angle, and two second inclined slits connected to both ends of the second horizontal slit are arranged symmetrically along the median perpendicular of the second horizontal slit. The input end of the planar waveguide crosses the first horizontal gap, and the distance from the bend of the input end of the T-shaped coplanar waveguide to the reference line is 2 times the distance from the center of the hexagonal substrate integrated waveguide cavity to the reference line. /3, using the T-shaped coplanar waveguide input end can realize the transition and impedance matching between the planar microstrip circuit structure and the hexagonal substrate integrated waveguide cavity structure, and stimulate the hexagonal substrate integration near the central operating frequency The TM 110 mode field distribution in the waveguide cavity realizes the in-phase feeding of two bent radiation slots, and the application of two oppositely symmetrical bent radiation slots reduces the lateral size of the antenna, thereby realizing the miniaturization design of the antenna. The integration of modern microwave and millimeter wave systems is improved. In addition, the high-order mode resonant slot antenna based on the hexagonal substrate integrated waveguide can be manufactured by mature PCB technology, and has the advantages of low cost, high precision, good repeatability, easy processing, and easy The characteristics of planar integration can realize mass production and manufacturing.
附图说明Description of drawings
图1是本发明基于六边形基片集成波导的高阶模谐振缝隙天线的结构示意图;Fig. 1 is the structural representation of the high-order mode resonant slot antenna based on the hexagonal substrate integrated waveguide of the present invention;
图2是本发明基于六边形基片集成波导的高阶模谐振缝隙天线的侧视图;Fig. 2 is a side view of the high-order mode resonant slot antenna based on the hexagonal substrate integrated waveguide of the present invention;
图3是本发明基于六边形基片集成波导的高阶模谐振缝隙天线的几何尺寸示意图;3 is a schematic diagram of the geometry of the high-order mode resonant slot antenna based on the hexagonal substrate integrated waveguide of the present invention;
图4为本发明基于六边形基片集成波导的高阶模谐振缝隙天线在10GHz处六边形基片集成波导腔体内TM110模式电场分布仿真图;4 is a simulation diagram of the electric field distribution of the TM 110 mode in the cavity of the hexagonal substrate integrated waveguide at 10 GHz for the high-order mode resonant slot antenna based on the hexagonal substrate integrated waveguide of the present invention;
图5为本发明基于六边形基片集成波导的高阶模谐振缝隙天线的输入端反射系数测试结果;Fig. 5 is the test result of the reflection coefficient of the input end of the high-order mode resonant slot antenna based on the hexagonal substrate integrated waveguide of the present invention;
图6为本发明基于六边形基片集成波导的高阶模谐振缝隙天线在10GHz处E面和H面辐射方向图测试结果,实线为E面,虚线为H面;Fig. 6 is the test result of the radiation pattern of the E-plane and H-plane at 10 GHz for the high-order mode resonant slot antenna based on the hexagonal substrate integrated waveguide of the present invention, the solid line is the E plane, and the dotted line is the H plane;
图中标记说明:介质基板1、上表面金属层2、下表面金属层3、金属化通孔阵列4、六边形基片集成波导腔体5、T形共地共面波导输入端6、第一弯折辐射缝隙7、第一水平缝隙71、第一倾斜缝隙72、第二弯折辐射缝隙8、第二水平缝隙81、第二倾斜缝隙82。Explanation of marks in the figure: dielectric substrate 1, upper surface metal layer 2, lower surface metal layer 3, metallized through-hole array 4, hexagonal substrate integrated waveguide cavity 5, T-shaped common-ground coplanar waveguide input end 6, The first bent radial slot 7 , the first horizontal slot 71 , the first inclined slot 72 , the second bent radial slot 8 , the second horizontal slot 81 , and the second inclined slot 82 .
具体实施方式Detailed ways
下面结合附图对本发明的具体实施方式作进一步的说明。The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.
如图1、2所示,该基于六边形基片集成波导的高阶模谐振缝隙天线,包括介质基板1以及设置在介质基板1表面的上表面金属层2、下表面金属层3,所述介质基板1上设置有贯穿于介质基板1的金属化通孔阵列4,所述金属化通孔阵列4与上表面金属层2、下表面金属层3共同围成一个六边形基片集成波导腔体5,在上表面金属层2上刻蚀有T形共地共面波导输入端6,在下表面金属层3上刻蚀有两条弯折辐射缝隙,分别为第一弯折辐射缝隙7、第二弯折辐射缝隙8,所述第一弯折辐射缝隙7、第二弯折辐射缝隙8以六边形基片集成波导腔体5的腔体中心点对称设置,所述第一弯折辐射缝隙7包括第一水平缝隙71以及从第一水平缝隙71的两端斜向上延伸的两个第一倾斜缝隙72,所述第一倾斜缝隙72与第一水平缝隙71的夹角为钝角并且连接在第一水平缝隙71两端的两个第一倾斜缝隙72沿第一水平缝隙71的中垂线对称设置,所述第二弯折辐射缝隙8包括第二水平缝隙81以及从第二水平缝隙81的两端斜向下延伸的两个第二倾斜缝隙82,所述第二倾斜缝隙82与第二水平缝隙81的夹角为钝角并且连接在第二水平缝隙81两端的两个第二倾斜缝隙82沿第二水平缝隙81的中垂线对称设置,所述T形共地共面波导输入端6跨过第一水平缝隙71,T形共地共面波导输入端6的弯折处到基准线之间的距离为六边形基片集成波导腔体5的腔体中心到基准线距离的2/3,所述基准线与第一水平缝隙71平行并且过位于第一水平缝隙71下方的金属化通孔的中心。通过在上表面金属层2上刻蚀有T形共地共面波导输入端6,在下表面金属层3上刻蚀有两条弯折辐射缝隙,分别为第一弯折辐射缝隙7、第二弯折辐射缝隙8,所述第一弯折辐射缝隙7、第二弯折辐射缝隙8以六边形基片集成波导腔体5的腔体中心点对称设置,所述第一弯折辐射缝隙7包括第一水平缝隙71以及从第一水平缝隙71的两端斜向上延伸的两个第一倾斜缝隙72,所述第一倾斜缝隙72与第一水平缝隙71的夹角为钝角并且连接在第一水平缝隙71两端的两个第一倾斜缝隙72沿第一水平缝隙71的中垂线对称设置,所述第二弯折辐射缝隙8包括第二水平缝隙81以及从第二水平缝隙81的两端斜向下延伸的两个第二倾斜缝隙82,所述第二倾斜缝隙82与第二水平缝隙81的夹角为钝角并且连接在第二水平缝隙81两端的两个第二倾斜缝隙82沿第二水平缝隙81的中垂线对称设置,所述T形共地共面波导输入端6跨过第一水平缝隙71,T形共地共面波导输入端6的弯折处到基准线之间的距离为六边形基片集成波导腔体5的腔体中心到基准线距离的2/3,利用T形共地共面波导输入端6可以实现平面微带电路结构与六边形基片集成波导腔体5结构的过渡和阻抗匹配,并激励起中心工作频率附近六边形基片集成波导腔体5内TM110模式场分布,从而实现对两条弯折辐射缝隙的同相馈电,而且两条相向对称弯折辐射缝隙的应用减小了天线的横向尺寸,从而实现天线的小型化设计,提高了现代微波毫米波系统的集成度,另外,该基于六边形基片集成波导的高阶模谐振缝隙天线可采用成熟的PCB技术制造,具有成本低、精度高、重复性好、易加工、易平面集成的特点,可实现批量化生产制造。As shown in Figures 1 and 2, the high-order mode resonant slot antenna based on the hexagonal substrate integrated waveguide includes a dielectric substrate 1 and an upper surface metal layer 2 and a lower surface metal layer 3 arranged on the surface of the dielectric substrate 1. The substrate 1 is provided with a metallized through-hole array 4 penetrating the dielectric substrate 1, and the metallized through-hole array 4 together with the upper surface metal layer 2 and the lower surface metal layer 3 forms a hexagonal substrate integrated waveguide cavity. Body 5, a T-shaped co-ground coplanar waveguide input end 6 is etched on the upper surface metal layer 2, and two bent radiation slots are etched on the lower surface metal layer 3, which are respectively the first bent radiation slot 7, The second bent radiation slot 8, the first bent radiation slot 7 and the second bent radiation slot 8 are arranged symmetrically with the cavity center point of the hexagonal substrate integrated waveguide cavity 5, the first bent The radiation slot 7 includes a first horizontal slot 71 and two first inclined slots 72 extending obliquely upward from both ends of the first horizontal slot 71, the angle between the first inclined slot 72 and the first horizontal slot 71 is an obtuse angle and The two first inclined slits 72 connected to both ends of the first horizontal slit 71 are arranged symmetrically along the vertical line of the first horizontal slit 71, and the second bent radial slit 8 includes the second horizontal slit 81 and the second horizontal slit 81. Two second inclined slits 82 extending obliquely downward at the two ends of 81, the angle between the second inclined slits 82 and the second horizontal slit 81 is an obtuse angle and the two second inclined slits connected to the two ends of the second horizontal slit 81 The slot 82 is arranged symmetrically along the mid-perpendicular line of the second horizontal slot 81, the input end 6 of the T-shaped coplanar waveguide crosses the first horizontal slot 71, and the bend of the input end 6 of the T-shaped coplanar waveguide reaches The distance between the reference lines is 2/3 of the distance from the center of the hexagonal substrate integrated waveguide cavity 5 to the reference line, and the reference line is parallel to the first horizontal slit 71 and located below the first horizontal slit 71 center of the metallized via. A T-shaped co-ground coplanar waveguide input end 6 is etched on the upper surface metal layer 2, and two bent radiation slots are etched on the lower surface metal layer 3, which are respectively the first bent radiation slot 7 and the second bent radiation slot. The bent radiation slot 8, the first bent radiation slot 7 and the second bent radiation slot 8 are arranged symmetrically with the cavity center of the hexagonal substrate integrated waveguide cavity 5, and the first bent radiation slot 7 includes a first horizontal slit 71 and two first inclined slits 72 extending obliquely upward from both ends of the first horizontal slit 71, the angle between the first inclined slit 72 and the first horizontal slit 71 is an obtuse angle and connected at The two first inclined slots 72 at both ends of the first horizontal slot 71 are arranged symmetrically along the mid-perpendicular line of the first horizontal slot 71, and the second bent radial slot 8 includes the second horizontal slot 81 and the Two second inclined slits 82 extending obliquely downward at both ends, the angle between the second inclined slits 82 and the second horizontal slit 81 is an obtuse angle, and the two second inclined slits 82 connected to the two ends of the second horizontal slit 81 It is arranged symmetrically along the mid-perpendicular line of the second horizontal slot 81, the T-shaped common ground coplanar waveguide input end 6 crosses the first horizontal slot 71, and the bend of the T-shaped common ground coplanar waveguide input end 6 reaches the reference line The distance between them is 2/3 of the distance between the cavity center of the hexagonal substrate integrated waveguide cavity 5 and the reference line, and the planar microstrip circuit structure and the hexagonal The transition and impedance matching of the structure of the substrate-integrated waveguide cavity 5 stimulates the TM 110 mode field distribution in the hexagonal substrate-integrated waveguide cavity 5 near the central operating frequency, thereby realizing the in-phase feeding of the two bent radiation slots Electricity, and the application of two opposite symmetrically bent radiation slots reduces the lateral size of the antenna, thereby realizing the miniaturization design of the antenna and improving the integration of modern microwave and millimeter wave systems. In addition, the integrated hexagonal substrate The high-order mode resonant slot antenna of the waveguide can be manufactured by mature PCB technology, which has the characteristics of low cost, high precision, good repeatability, easy processing, and easy planar integration, and can realize mass production and manufacturing.
在上述实施方式中,所述六边形基片集成波导腔体5的高度为天线中心工作频率对应真空波长的六十分之一,可以有效抑制T形共地共面波导输入端6所具有的缝隙结构在相应频率处的上半空间辐射,同时也可以使天线具有小尺寸、低轮廓、轻重量、高增益、高辐射效率和高隔离度等特点。In the above embodiment, the height of the hexagonal substrate-integrated waveguide cavity 5 is one-sixtieth of the vacuum wavelength corresponding to the central operating frequency of the antenna, which can effectively suppress the T-shaped common-ground coplanar waveguide input end 6. The slot structure radiates in the upper half space at the corresponding frequency, and at the same time, it can also make the antenna have the characteristics of small size, low profile, light weight, high gain, high radiation efficiency and high isolation.
另外,所述第一弯折辐射缝隙7、第二弯折辐射缝隙8的缝隙尺寸均相同,使得第一弯折辐射缝隙7、第二弯折辐射缝隙8为具有相同中心工作频率的谐振式辐射缝隙,它们被中心工作频率附近六边形基片集成波导腔体5内TM110模式场分布同相馈电,可以提高天线工作带宽内的增益。In addition, the slot sizes of the first bent radiation slot 7 and the second bent radiation slot 8 are the same, so that the first bent radiation slot 7 and the second bent radiation slot 8 are resonant with the same central operating frequency. The radiation slots are fed in phase by the TM 110 mode field distribution in the hexagonal substrate integrated waveguide cavity 5 near the central operating frequency, which can increase the gain within the operating bandwidth of the antenna.
实施例Example
该实施例中天线工作在X波段,中心工作频率为10GHz,介质基板1采用相对介电常数为2.2,厚度Hc=0.508mm的Rogers5880介质板。天线的尺寸如图3所示,具体参数如下所述:如图3所示,天线具体尺寸为:Rc=9.7mm,Lms=4.3mm,Wms=1.5mm,Lcpw1=6.65mm,Lcpw2=1.35mm,Gcpw=0.5mm,Ls1=5.1mm,Ls2=3.5mm,Ws=0.8mm,theta=120°,Os=1.2mm,Dv=1mm,Pv=1.4mm,Ov=1.15mm。In this embodiment, the antenna works in the X-band, and the central operating frequency is 10 GHz. The dielectric substrate 1 is a Rogers 5880 dielectric board with a relative permittivity of 2.2 and a thickness of Hc=0.508 mm. The dimensions of the antenna are shown in Figure 3, and the specific parameters are as follows: As shown in Figure 3, the specific dimensions of the antenna are: Rc=9.7mm, Lms=4.3mm, Wms=1.5mm, Lcpw1=6.65mm, Lcpw2=1.35mm , Gcpw=0.5mm, Ls1=5.1mm, Ls2=3.5mm, Ws=0.8mm, theta=120°, Os=1.2mm, Dv=1mm, Pv=1.4mm, Ov=1.15mm.
天线在中心工作频率10GHz处,六边形基片集成波导腔体5内TM110模式电场分布仿真结果如图4所示,从图中可以看出此时第一弯折辐射缝隙7、第二弯折辐射缝隙8同相馈电;天线输入端反射系数测试结果如图5所示,-10dB相对带宽为0.75%,并且有效抑制了微带线转接T形共地共面波导输入端6所具有的缝隙结构在相应频率处的上半空间辐射;天线在10GHz处,最大增益测试结果为7.71dBi,E面和H面辐射方向图测试结果如图6所示,其中E面和H面半功率主瓣宽度测试结果分别为65°和90°。The antenna is at the central operating frequency of 10 GHz, and the simulation results of the electric field distribution of the TM 110 mode in the hexagonal substrate integrated waveguide cavity 5 are shown in Figure 4. It can be seen from the figure that the first bent radiation slot 7 and the second The bent radiation slot 8 is fed in the same phase; the test results of the reflection coefficient at the input end of the antenna are shown in Figure 5, and the relative bandwidth of -10dB is 0.75%, and it effectively suppresses the transmission of the microstrip line to the input end 6 of the T-shaped coplanar waveguide. The slot structure radiates in the upper half of the space at the corresponding frequency; the antenna is at 10GHz, and the maximum gain test result is 7.71dBi. The power main lobe width test results are 65° and 90° respectively.
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