CN103435000A - Wafer-level packaging structure and packaging method of sensor of integrated MEMS (micro-electromechanical system) device - Google Patents
Wafer-level packaging structure and packaging method of sensor of integrated MEMS (micro-electromechanical system) device Download PDFInfo
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Abstract
The invention discloses a packaging method for a pressure sensor chip and a pressure sensor. The method comprises the following steps of providing a pressure sensor chip, and forming a protective layer on an MEMS (micro-electromechanical system) device layer, wherein a welding pad is exposed to the protective layer; forming a sacrifice layer above the protective layer, wherein the position of the welding pad is exposed to the sacrifice layer; forming a first metal layer above the welding pad; forming a second metal layer above the first metal layer and the sacrifice layer; and etching the second metal layer, and forming a welding ball on the first metal layer. According to the invention, in the steps of etching the sacrifice layer and a metal interconnection layer, because corresponding thin parts of a groove of a sensing component are protected by the protective layer, the sensing component is not damaged, and the reliability of the component is greatly improved, so that the pressure sensor chip can be packaged by using BGA (ball grid array), therefore, the packaging size is reduced, the volume of the component is reduced, the cost is relatively low, and products are optimized.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of wafer level packaging structure of pressure sensor and method for packing.
Background technology
The MEMS sensor has been applied in the middle of every field, needs due to working environment, the MEMS sensor must adopt a kind of effective encapsulating structure and method for packing, traditional encapsulated type is mainly wafer-level package, normally a bare chip is put into to ceramic cartridge, by the spun gold soldered ball, with pin, be connected, cover plate on it is connected with shell by scolder or crunch seal, complete the encapsulation process of bare chip, owing on a wafer, can cutting out many chips, this method for packing needs to test and encapsulate to each chip, has caused the increase of cost.
For the problems referred to above, people have been developed other method for packing, asic chip and MEMS chip are manufactured on respectively to two independently on substrate, then by bonding technology by two chip packages together, to form the MEMS device, although realized the encapsulation of wafer scale, but the method for packing that adopts two substrates makes integrated degree greatly reduce, make the utilization rate of substrate reduce, also increased extra package area, package dimension also increases, and is unfavorable for adapting to the development trend of MEMS device package miniaturization.The scolder simultaneously used in encapsulation process is gold-tin alloy, terne metal etc., and the CMOS technique of these materials and standard is also not exclusively compatible.
Therefore, how on a substrate, to realize cmos device and MEMS sensor wafer-level packaging and with the CMOS process compatible, reduce package dimension, and the inductive means that guarantees the pressure sensor of integrated MEMS device can to experience pressure be current problem demanding prompt solution.
Summary of the invention
The technical problem to be solved in the present invention just is to provide a kind of wafer level packaging structure and method for packing of pressure sensor, has reduced the package dimension of pressure sensor.
In order to solve the problems of the technologies described above, the invention provides a kind of method for packing of pressure sensor wafer scale, comprise step:
First substrate is provided, and it comprises substrate, is positioned at dielectric substance layer on substrate, has the cmos circuit layer in described substrate, has the MEMS device layer in described dielectric substance layer, on described MEMS device layer, has the weld pad be electrically connected to the MEMS device;
Second substrate is provided, there are several contact holes on its bottom surface;
Etching is carried out in bottom surface to described second substrate, between described contact hole, forms groove, and the volume of a described groove can hold the MEMS device that a sensor comprises;
Bonding is carried out in surface, the MEMS device layer place of first substrate and the bottom surface of second substrate, make the MEMS device layer be positioned at described groove and the surperficial cavity formed of MEMS device layer, and an end of described contact hole is connected with described weld pad; The other end at contact hole forms soldered ball
The present invention also provides a kind of wafer level packaging structure of pressure sensor in addition, comprising:
First substrate, described first substrate comprises substrate and is positioned at the dielectric substance layer on described substrate to have the cmos circuit layer in described substrate, has the MEMS device layer in described dielectric substance layer, on described MEMS layer, has the weld pad be electrically connected to the MEMS device;
On described MEMS device layer, bonding has second substrate;
The bottom surface of described second substrate has groove, and described groove and described first substrate surround cavity, and described MEMS device layer is positioned at this cavity;
Have contact hole in described second substrate, an end of described contact hole is electrically connected to described weld pad, and the other end is connected with soldered ball.
The method for packing of the sensor wafer scale of integrated MEMS device of the present invention and encapsulating structure be compared to the prior art: the MEMS device of sensor is enclosed in cavity; protect its sensitivity, and realized the BGA encapsulation, made the volume-diminished of device; cost is lower, and product is optimized.
The accompanying drawing explanation
The schematic flow sheet of the method for packing of the sensor wafer scale of the integrated MEMS device that Fig. 1 is one embodiment of the invention;
The sensor package method schematic diagram of the integrated MEMS device that Fig. 2-Fig. 6 is one embodiment of the invention.
The specific embodiment
The wafer-level packaging of the sensor of traditional integrated MEMS device is manufactured on respectively two independently on substrate by asic chip and MEMS chip, then by bonding technology by two chip packages together, to form the MEMS device, although realized the encapsulation of wafer scale, but the method for packing that adopts two substrates makes integrated degree greatly reduce, make the utilization rate of substrate reduce, also increased extra package area, package dimension also increases, and is unfavorable for adapting to the development trend of MEMS device package miniaturization.The scolder simultaneously used in encapsulation process is gold-tin alloy, terne metal etc., and the CMOS technique of these materials and standard is also not exclusively compatible.
Utilized the pressure sensor of another patented technology of the applicant in the present invention, sensor has comprised the cmos circuit layer and has been positioned at the MEMS device layer above CMOS at a chip, utilized between cmos circuit layer and MEMS device layer with the interconnection layer of CMOS process compatible and interconnected.For this sensor chip, in the present invention, utilize another substrate as base plate for packaging, the perforate of slotting thereon, can be enclosed in the MEMS device in cavity thereby make.
For the problems referred to above, after the inventor is studied, obtained the method for packing of the sensor wafer scale of integrated MEMS device of the present invention, the schematic flow sheet of the method for packing of the sensor wafer scale of the integrated MEMS device that Fig. 1 is one embodiment of the invention, as shown in Figure 1, it comprises the following steps:
S10: first substrate is provided, and it comprises substrate, is positioned at dielectric substance layer on substrate, has the cmos circuit layer in described substrate, has the MEMS device layer in described dielectric substance layer, on described MEMS device layer, has the weld pad be electrically connected to the MEMS device;
S20: second substrate is provided, there are several contact holes on its bottom surface;
S30: etching is carried out in the bottom surface to described second substrate, between described contact hole, forms groove, the area of the MEMS device that the corresponding sensor of the area of a groove comprises;
S40: bonding is carried out in surface, the MEMS device layer place of first substrate and the bottom surface of second substrate, make the MEMS device layer be positioned at described groove and the surperficial cavity formed of MEMS device layer, and an end of described contact hole is connected with described weld pad;
S50: the other end at contact hole forms soldered ball.
The schematic flow sheet of the method for packing of the sensor wafer scale of the integrated MEMS device that Fig. 1 is one embodiment of the invention; The sensor package method schematic diagram of the integrated MEMS device that Fig. 2-Fig. 6 is one embodiment of the invention.Below in conjunction with Fig. 1 to Fig. 5, a specific embodiment of the present invention is described, for convenience of explanation, in the present embodiment, concrete take is used for measuring atmospheric pressure sensor as example describes, and certainly the invention is not restricted to measure atmospheric pressure sensor or pressure sensor.
With reference to figure 2, first substrate 100 comprises substrate 110, is positioned at the dielectric substance layer 120 on substrate, has cmos circuit layer 111 in substrate 110, there is MEMS device layer 121 in dielectric substance layer 120, there is the weld pad 122 be electrically connected to the MEMS device on MEMS device layer 121.Wherein, the material of substrate 110 can be monocrystalline silicon, germanium or polysilicon and laminated construction thereof, form cmos device thereon by integrated circuit preparation technology, utilize chemical vapour deposition (CVD) dielectric substance layer 120 on substrate 110 surfaces, form the MEMS device on dielectric substance layer 120, and the weld pad 122 that is electrically connected to the MEMS device of formation.
With reference to figure 3, in the present embodiment, concrete, as shown in Figure 6, provide a second substrate with contact hole 210, base plate for packaging 200, and the thickness of base plate for packaging is 300
, 500um for example.
Preferably the substrate of silicon substrate, can also be the substrate of other semi-conducting materials of silica.The substrate 205 of second substrate 200 can be identical with the material of the substrate of first substrate 100.Contact hole 210 can adopt method well-known to those skilled in the art to form, for example the substrate of etching second substrate 200 forms perforate, then depositing metal layers makes metal filled perforate, then grind the metal level of removing the empty outside, formation is filled with the contact hole 210 of metal, fill in advance metal and can avoid depositing metal layers and grinding metal layer in the contact hole 210 of second substrate 200, the damage that the step of removing metal level is brought to the MEMS device layer of first substrate, provide the accuracy of device.In addition, can between follow-up any step, carry out filling contact hole, the present embodiment is not done restriction to the step of filling contact hole yet.
Fig. 4 is the cutaway view of Fig. 3 along a-a ' direction, as shown in Figure 4
In the present embodiment, the method that forms second substrate 200 is: a base plate for packaging is provided, the etching of carrying out of base plate for packaging is formed to contact hole 210, then etching is carried out in the bottom surface of base plate for packaging, the bottom surface of base plate for packaging is also with regard to its bonding contact-making surface.The bottom surface of etching base plate for packaging 200, form groove 230 on surface, the volume of a described groove can hold the MEMS device that a sensor comprises, the degree of depth of this groove and width will be complementary with the MEMS device of MEMS device layer on first substrate, make the MEMS device that can hold a sensor, thereby, after the cutting that completes chip, the MEMS device of a sensor is accommodated in this groove.Concrete lithographic method can adopt the lithographic method to silicon substrate well-known to those skilled in the art, for example be pre-formed the grinding figure, the part of protection groove outside, etching is carried out in unprotected zone and form groove, be specially in the present embodiment: on second substrate 200 bottom surfaces, form mask pattern, expose the position that will form groove 230 between contact hole 210, and expose between groove 230 and groove 230 strip region perpendicular to groove 230 sidewalls;
Etching is carried out in bottom surface to second substrate 200, forms the strip-shaped grooves that groove 230 reaches perpendicular to groove 230 sidewalls.Also etching in two steps in other embodiments: form mask pattern on second substrate 200 bottom surfaces, expose the position that will form groove 230 between contact hole 210;
Etching is carried out in bottom surface to second substrate 200, forms groove 230;
Form mask pattern on second substrate 200 bottom surfaces, expose between groove 230 and groove 230 strip region perpendicular to groove 230 sidewalls;
Etching is carried out in bottom surface to second substrate 200, forms the strip-shaped grooves 235 perpendicular to groove 230 sidewalls.
In the present embodiment, owing to being the mineralization pressure sensor, and be the pressure sensor of measuring air pressure, therefore need to be after first substrate 100 and second substrate 200 bondings, the MEMS device of MEMS device layer 111 is sealed in the cavity that the groove 230 of second substrate 200 and first substrate 100 form, this cavity, due to the requirement of measuring, be communicated with outside.Therefore preferred in the present embodiment, on the sidewall of groove 230, etching forms groove 235.In other embodiments, if do not need cavity and outside the connection, also can not form this groove.
In another embodiment; concrete lithographic method can be identical with the method for etched recesses 230; direction is different to be got final product; the concrete zone be not etched that can form mask pattern protection second substrate; the zone that forms through hole 235 is not protected; then be put in etching solution and carry out lateral etching; after forming through hole; remove again mask pattern; also can on sidewall, form mask pattern; utilize the lithographic method etching sidewall of plasma, thereby remove the mask pattern on sidewall after forming through hole.
With reference to figure 5, in the present embodiment concrete, can form binding agent on the MEMS of first substrate 100 device layer 111 surfaces, place, form binding agent in the bottom surface of second substrate 200, by first substrate 100 and second substrate 200 bondings.Make MEMS device layer 111 be positioned at the cavity that described groove 230 and MEMS device layer 111 surfaces form, in MEMS device layer 111, included MEMS device of pressure sensor is positioned at a groove of second substrate 200, namely is sealed in cavity.And an end of the contact hole 210 that described groove 230 exposes is connected with described weld pad 122.
With reference to figure 6, after bonding, grind the end face of described second substrate 200, expose the other end of contact hole 210.For example, can adopt cmp, or the method for etch silicon substrate, from end face attenuate second substrate 200, until expose the other end of contact hole 210.Can be thinned to 50-300um, for example 200um.Exposed ends at contact hole forms the concrete method that can adopt BGA well-known to those skilled in the art of soldered ball 250, does not repeat them here.
Also can before bonding, grind the second substrate end face in another embodiment, expose contact hole.
In a preferred version effect of the present embodiment, can also be ground from the another side of first substrate, the attenuate first substrate, thus make the pressure sensor volume after encapsulation less.As shown in Figure 5, by the thinning back side of substrate 100, being about in substrate 100 substrate surface away from cmos device 101, to be thinned to thickness be 200um.Wherein reduction process can be chemically mechanical polishing, can be plasma etching, can be also the chemical attack attenuate, can also be the combination reduction process between them.In other embodiment, the thickness of attenuate back substrate 100
can be the arbitrary value between 50um-1000um, for example the thickness of attenuate back substrate 100 can be 50um-300um.
After forming soldered ball, structure after first substrate and second substrate bonding is cut, the cut-in groove sidewall, make and be divided into several sensor chips, and described groove is cut off, the cavity that makes described groove after cutting and MEMS device layer surface form is by described groove and outside the perforation.
Above-mentioned explanation is only the explanation of carrying out for one embodiment of the present of invention, the sensor of integrated MEMS device can be also the sensor of other types in other embodiments, the MEMS device is sealed in the cavity that first substrate and second substrate surround like this, this cavity need not form and the outside through hole be communicated with, and therefore also just need to not form groove at the sidewall of cavity.
Method for packing of the present invention, realized the BGA encapsulation, thereby reduced encapsulation volume, reduced cost, and guaranteed that the MEMS device is injury-free, and effectively be sealed in cavity, makes the sensitivity of MEMS device better.
In another embodiment of the present invention, first substrate only comprises substrate, with the contact hole that is arranged in substrate, after the bonding that completes second substrate and first substrate, the contact hole on second substrate is filled to metal, for example utilize the method for chemical vapor deposition or physical vapor deposition to form metal level, then be etched away unnecessary metal level, formation is filled with the contact hole of metal, and an end of contact hole connects weld pad, forms soldered ball on the other end.Additive method is identical with the first embodiment, therefore repeats no more.
The encapsulating structure that the present invention also provides a kind of above-mentioned method for packing to obtain, as shown in Figure 6, a kind of wafer level packaging structure of sensor of integrated MEMS device comprises:
On described MEMS device layer 121, bonding has second substrate 200;
The bottom surface of described second substrate 200 has groove 230, and described groove 230 and described first substrate surround cavity, and described MEMS device layer 121 is positioned at this cavity;
Have contact hole 210 in described second substrate 200, an end of described contact hole 210 is electrically connected to described weld pad 122.
There is groove (please refer to 235 in Fig. 4) on the sidewall of the cavity that described first substrate 100 and second substrate 200 surround, described groove 235 make described cavity and its outside penetrating.
Concrete, can, with reference to the explanation of above-mentioned method for packing embodiment, at this, no longer be elaborated.
The above, be only preferred embodiment of the present invention, not the present invention done to any pro forma restriction.Any those of ordinary skill in the art, do not breaking away from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention,, all still belong in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (9)
1. the method for packing of the sensor wafer scale of an integrated MEMS device, is characterized in that, comprises step:
First substrate is provided, and it comprises substrate, is positioned at dielectric substance layer on substrate, has the cmos circuit layer in described substrate, has the MEMS device layer in described dielectric substance layer, on described MEMS device layer, has the weld pad be electrically connected to the MEMS device;
Second substrate is provided, there are several contact holes on its bottom surface;
Etching is carried out in bottom surface to described second substrate, between described contact hole, forms groove, and the volume of a described groove can hold the MEMS device that a sensor comprises;
Bonding is carried out in surface, the MEMS device layer place of first substrate and the bottom surface of second substrate, make the MEMS device layer be positioned at described groove and the surperficial cavity formed of MEMS device layer, and an end of described contact hole is connected with described weld pad;
The other end at contact hole forms soldered ball.
2. the method for packing of the sensor wafer scale of integrated MEMS device as claimed in claim 1, is characterized in that, the described other end at contact hole comprises step before forming the soldered ball step: grind the end face of described substrate, expose the other end of contact hole.
3. the method for packing of the sensor wafer scale of integrated MEMS device as claimed in claim 1, it is characterized in that, the step of the bottom surface of described second substrate being carried out to etching comprises: etching is carried out in the bottom surface to second substrate, form several grooves perpendicular to described sidewall on the sidewall of the groove of described second substrate, described groove connects the sidewall between adjacent grooves.
4. the method for packing of the sensor wafer scale of integrated MEMS device according to claim 1, is characterized in that, also comprises the substrate that grinds first substrate.
5. the method for packing of the sensor wafer scale of integrated MEMS device according to claim 1, it is characterized in that, after forming soldered ball, structure after first substrate and second substrate bonding is cut, the cut-in groove sidewall, make and be divided into several sensor chips, and described groove is cut off, the cavity that makes described groove after cutting and MEMS device layer surface form, by described groove and outside the perforation.
6. the method for packing of the sensor wafer scale of integrated MEMS device according to claim 1, it is characterized in that, the step of the bottom surface of described second substrate being carried out to etching comprises: on the second substrate bottom surface, form mask pattern, expose the position that will form groove between contact hole, and expose between groove and groove the strip region perpendicular to recess sidewall;
Etching is carried out in bottom surface to second substrate, forms groove and reaches the strip-shaped grooves perpendicular to recess sidewall.
7. the method for packing of the sensor wafer scale of integrated MEMS device according to claim 1, is characterized in that, the step of the bottom surface of described second substrate being carried out to etching comprises:
Form mask pattern on the second substrate bottom surface, expose the position that will form groove between contact hole;
Etching is carried out in bottom surface to second substrate, forms groove;
Form mask pattern on the second substrate bottom surface, expose between groove and groove the strip region perpendicular to recess sidewall;
Etching is carried out in bottom surface to second substrate, forms the strip-shaped grooves perpendicular to recess sidewall.
8. the wafer level packaging structure of the sensor of an integrated MEMS device comprises:
First substrate, described first substrate comprises substrate and is positioned at the dielectric substance layer on described substrate to have the cmos circuit layer in described substrate, has the MEMS device layer in described dielectric substance layer, on described MEMS layer, has the weld pad be electrically connected to the MEMS device;
On described MEMS device layer, bonding has second substrate;
The bottom surface of described second substrate has groove, and described groove and described first substrate surround cavity, and described MEMS device layer is positioned at this cavity;
Have contact hole in described second substrate, an end of described contact hole is electrically connected to described weld pad, and the other end is connected with soldered ball.
9. the wafer level packaging structure of the sensor of integrated MEMS device according to claim 8, is characterized in that, on the sidewall of the cavity that described first substrate and second substrate surround, has groove, described groove make described cavity and its outside penetrating.
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| CN106744656A (en) * | 2016-12-02 | 2017-05-31 | 华进半导体封装先导技术研发中心有限公司 | A kind of mems device method for packing and structure |
| CN107235468A (en) * | 2017-05-22 | 2017-10-10 | 苏州敏芯微电子技术股份有限公司 | A kind of mems device and its manufacture method |
| CN110642220A (en) * | 2018-06-27 | 2020-01-03 | 日月光半导体制造股份有限公司 | Semiconductor device package and method of manufacturing the same |
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