CN103227091B - Plasma processing apparatus - Google Patents
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- CN103227091B CN103227091B CN201310138892.7A CN201310138892A CN103227091B CN 103227091 B CN103227091 B CN 103227091B CN 201310138892 A CN201310138892 A CN 201310138892A CN 103227091 B CN103227091 B CN 103227091B
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 62
- 238000006243 chemical reaction Methods 0.000 claims abstract description 36
- 230000005684 electric field Effects 0.000 claims abstract description 27
- 239000012212 insulator Substances 0.000 claims abstract description 20
- 230000006698 induction Effects 0.000 claims abstract description 12
- 239000007921 spray Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 24
- 230000008878 coupling Effects 0.000 claims description 18
- 238000010168 coupling process Methods 0.000 claims description 18
- 238000005859 coupling reaction Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 12
- 230000006978 adaptation Effects 0.000 claims description 9
- 239000003990 capacitor Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000009826 distribution Methods 0.000 abstract description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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Abstract
The invention discloses a kind of plasma processing apparatus, comprise reaction chamber and the first radio frequency power source and the second radio frequency power source, wherein reaction chamber comprises top electrode arranged in parallel and bottom electrode, and top electrode is arranged in gas spray, and bottom electrode is located in electrostatic chuck; First radio frequency power source in order to form the rf electric field of vertical direction to produce plasma between upper/lower electrode, and the second radio frequency power source is in order to adjust the energy of plasma; Described reaction chamber also comprises annular insulator, around the upper area of electrostatic chuck and/or electrostatic chuck; And by the open metal ring electrode of Wire-wound, be embedded in annular insulator, described becket is connected with radio-frequency current to produce the induction field of horizontal direction.The present invention effectively can improve the uniformity of plasma density distribution in reaction chamber.
Description
Technical field
The present invention relates to semiconductor processing equipment, particularly a kind of plasma processing apparatus.
Background technology
In recent years, along with the development of semiconductor fabrication process, to the integrated level of element and performance requirement more and more higher, plasma technique (PlasmaTechnology) obtains to be applied very widely.Plasma technique by passing into reacting gas and introducing electron stream in the reaction chamber of plasma processing apparatus, rf electric field is utilized to make Accelerating electron, colliding with reacting gas makes reacting gas occur to ionize and plasma, the plasma produced can be used to various semiconductor fabrication process, such as depositing operation (as chemical vapour deposition (CVD)), etching technics (as dry etching) etc.
Plasma-treating technology often adopts capacitive coupling plasma processing apparatus to produce plasma.Fig. 1 illustrates a kind of structural representation of capacitive coupling plasma processing apparatus.As shown in Figure 1, top electrode 2 and the bottom electrode 3 of pair of plates formula is arranged with in parallel in the reaction chamber 1 of plasma processing apparatus, top electrode is configured in reacting gas spray head 4, and bottom electrode is configured in electrostatic chuck 5, and pending substrate 6 is positioned on electrostatic chuck 5.By applying high-frequency radio frequency in the flat bottom electrode 3 be arranged in parallel, by top electrode 2 ground connection, make the rf electric field forming vertical direction between top electrode 2 and bottom electrode 3, the electronics accelerated by rf electric field and the molecule of reacting gas occur to ionize and collide, to reacting gas ionization to generate plasma.
But in actual applications, the uniformity of the plasma density using the plasma processing apparatus of capacitively coupled to produce is unsatisfactory.Due to capacity coupled architectural characteristic, in reaction chamber, the electric field strength of zone line and fringe region there are differences, the density of the plasma produced has zone line and distributes higher than the feature of fringe region, and due to the speed of substrate being carried out to plasma treatment relevant to this plasma density, finally can cause the situation that plasma-treating technology is uneven: such as, substrate intermediate etch or processing speed are fast, etching edge or processing speed slow.This all has a significant impact the technology controlling and process of semiconductor device manufacture and rate of finished products.Therefore, how improving the uniformity of plasma density in plasma processing apparatus is the technical problem that those skilled in the art are badly in need of solving at present.
For addressing this problem, a kind of way of the prior art is the closed conducting ring arranging connection second radio frequency power source around electrostatic chuck, above closed conducting ring, the second electric field of ring-type is formed by the second radio-frequency power supply, regulate the parameter of the second radio frequency power source afterwards again, second electric field of annular is superposed mutually with the electric field above bottom electrode, improve the Electric Field Distribution of electrostatic chuck fringe region, make the central area of pending substrate and the plasma density of fringe region have good consistency and uniformity.Such as, but for comprising the element with conductive material in reaction chamber, focusing ring, the rf electric field of the vertical direction of this superposition can aggravate the bombardment of plasma to focusing ring, causes the damage of focusing ring possibly.
Summary of the invention
Main purpose of the present invention is the defect overcoming prior art, provides a kind of plasma processing apparatus that can obtain the comparatively uniform plasma density of distribution.Further, a kind of plasma processing apparatus extending the focusing ring life-span is provided.
For reaching above-mentioned purpose, the invention provides a kind of plasma processing apparatus, it comprises reaction chamber, the first radio frequency power source and the second radio frequency power source, wherein comprises the electrostatic chuck for clamping pending substrate in reaction chamber; For the gas spray to described reaction chamber inside input process gas; Top electrode arranged in parallel and bottom electrode, described top electrode is arranged in described gas spray, and described bottom electrode is located in described electrostatic chuck; Described first radio frequency power source is connected with described bottom electrode by the first radio frequency adaptation with the second radio frequency power source, described first radio frequency power source produces plasma in order to the rf electric field providing radio-frequency power form vertical direction between described top electrode and described bottom electrode to excite process gas, and described second radio frequency power source is in order to adjust the energy of described plasma; Described reaction chamber also comprises annular insulator, and it is around the upper area of described electrostatic chuck and/or described electrostatic chuck; And by the open metal ring electrode of Wire-wound, be embedded in described annular insulator, described open metal ring electrode is connected with radio-frequency current to produce the induction field of horizontal direction.
Preferably, described reaction chamber also comprises focusing ring and the support ring for supporting described focusing ring, and described focusing ring is around described substrate, and described support ring to be positioned at below described focusing ring and around described electrostatic chuck; Described dead ring is described annular insulator, and described open metal ring electrode level is embedded in described support ring.
Preferably, the cross section of described support ring is L shape or rectangle.
Preferably, described reaction chamber also comprises plasma confinement assembly, and it comprises multiple mutually stacking in vertical direction and spaced concentric ring that is parallel to each other, and described plasma confinement assembly is around the region above described electrostatic chuck; At least one concentric ring in described plasma confinement assembly is described annular insulator.
Preferably, the multiple concentric rings in described plasma confinement assembly are described annular insulator, and in described multiple concentric ring, level is embedded described open metal ring electrode respectively.
Preferably, the in series or in parallel with each other or series-parallel connection of multiple described open metal ring electrode.
Preferably, described radio-frequency current is produced by the 3rd radio frequency power source putting on described open metal ring electrode, and the frequency of described 3rd radio frequency power source is low frequency.
Preferably, described 3rd radio frequency power source connects one end of described open metal ring electrode by the second radio frequency adaptation, to produce described radio-frequency current in described open metal ring electrode; The other end ground connection of described open metal ring electrode.
Preferably, described first radio frequency adaptation comprises power divider, described second radio frequency power source is connected with one end of described open metal ring electrode by described power divider, to apply described 3rd radio frequency power source and produce described radio-frequency current on described open metal ring electrode; The other end ground connection of described open metal ring electrode.
Preferably, described power divider is tunable capacitor.
Preferably, the scope of described tunable capacitor is for being less than 1000pF.
Preferably, the frequency of described 3rd radio frequency power source is less than or equal to 13.56MHz.
Preferably, the frequency of described second radio frequency power source is less than or equal to 13.56MHz, and the frequency of described first radio frequency power source is higher than the frequency of described second radio frequency power source.
Preferably, described top electrode and described bottom electrode are plate electrode.
Preferably, described open metal ring electrode is that Wire-wound 1 encloses or 2 circles form.
Preferably, the material of described annular insulator is selected from quartz or pottery.
Compared to prior art, its beneficial effect of plasma processing apparatus of the present invention is: the present invention passes through around substrate or arranges the open metal ring electrode being connected with radio-frequency current above surrounding, make the induction field producing horizontal direction in reaction chamber, carry out the plasma density of compensates for substrate fringe region, and then make plasma-treating technology even.In addition, by passing into the radio-frequency current of low frequency in becket, make the electric field of the vertical direction produced between becket and chamber top electrode very little, therefore can not cause more violent plasma bombardment to focusing ring, effectively can extend the useful life of focusing ring.
Accompanying drawing explanation
Fig. 1 is the structural representation of plasma processing apparatus in prior art;
Fig. 2 is the structural representation of the plasma processing apparatus of one embodiment of the invention;
Fig. 3 is the schematic diagram of the plasma processing apparatus split shed metal ring electrode of one embodiment of the invention;
Fig. 4 is the structural representation of the plasma processing apparatus of another embodiment of the present invention.
Embodiment
For making content of the present invention clearly understandable, below in conjunction with Figure of description, content of the present invention is described further.Certain the present invention is not limited to this specific embodiment, and the general replacement known by those skilled in the art is also encompassed in protection scope of the present invention.
Fig. 2 ~ Fig. 4 shows multiple execution modes of plasma treatment appts of the present invention.Should be appreciated that, plasma processing apparatus in the present invention can be the devices such as plasma etching, plasma physical vapor deposition, plasma chemical vapor deposition, plasma surface cleaning, plasma processing apparatus is only exemplary, it can comprise less or more element, or the arrangement of this element may be to that indicated in the drawings identical or different.
Embodiment 1
Refer to Fig. 2, it is depicted as the structural representation of the present embodiment plasma process chamber.Plasma processing apparatus comprises reaction chamber 10, wherein introduces the gas that responds; The top of reaction chamber 10 is provided with reacting gas spray head 11, and reacting gas spray head 11 comprises flat top electrode 21, this top electrode 21 ground connection; Be provided with the electrostatic chuck 12 for clamping substrate 30 bottom reaction chamber 10, this substrate 30 can be the semiconductor chip treating to etch or to process or the glass plate treating to be processed into flat-panel monitor.The flat bottom electrode 22 parallel with top electrode 21 is provided with in electrostatic chuck 12.Bottom electrode 22 is connected with the first radio frequency source 40a and the second radio frequency source 40b by the first radio frequency adaptation 41.First radio frequency source 40a and the second radio frequency source 40b is applied on bottom electrode 22, first radio frequency source 40a makes the rf electric field forming vertical direction between top electrode 21 and bottom electrode 22, the electronics accelerated by rf electric field and the molecule of reacting gas occur to ionize and collide, to reacting gas ionization to generate plasma.Second radio frequency source 40b plasma does electric field force effect simultaneously, and the energy of adjustment plasma, beats plasma at substrate 30 on the surface.The frequency of the first radio frequency source 40a is higher, and the plasma density of generation is also larger, and in general, the frequency of the first radio frequency source 40a is high frequency, such as, be 40MHz, 60MHz or 120MHz.The frequency of the second radio frequency source 40b is lower, such as, be 400KHz, 2MHz or 13.56MHz.In order to improve plasma density distribution, the present invention arranges open metal ring electrode 23 around electrostatic chuck 12 or above surrounding.For avoiding open metal ring electrode 23 to be exposed in plasma environment, open metal ring electrode 23 is embedded in annular insulator.The material of annular insulator is such as the insulating material such as pottery or quartz.Annular insulator can be looped around electrostatic chuck 12 or electrostatic chuck 12 upper area or be looped around electrostatic chuck 12 and upper area thereof.Electrostatic chuck 12 and open metal ring electrode 23 are preferably concentric and arrange.Shown in Fig. 3, open metal ring electrode 23 is formed by Wire-wound, and preferably, open metal ring electrode is that winding 1 encloses or 2 circles.Wire is better selects copper cash, and it has the advantage that conductance is high, not oxidizable and loss is little.Be connected with radio-frequency current I in open metal ring electrode 23, radio-frequency current I is produced by the 3rd radio frequency power source 42 putting on becket.According to Faraday's law, this radio-frequency current produces the magnetic field of alternation, and the induction field E ' producing the horizontal direction contrary with aforementioned radio-frequency current I direction can be responded in the magnetic field of alternation.As shown in Figure 3, at a time, open metal ring electrode 23 has induction field E ' as shown by arrows.From in figure, this induction field is the horizontal direction along open metal ring electrode 23 circumference, therefore, in open metal ring electrode 23 present position, that is to say that the electric field strength of reaction chamber fringe region is strengthened, the plasma density of such fringe region will increase, thus improve the uniformity of plasma density distribution.
Because the radio-frequency current of circulation in open metal ring electrode 23 is produced by the 3rd radio frequency power source 42, and the 3rd radio frequency power source 42 also may produce the rf electric field of vertical direction between open metal ring electrode 23 and top electrode 21, when the frequency of the 3rd radio frequency power source 42 is higher, the rf electric field intensity then produced between open metal ring electrode 23 and top electrode 21 is also larger, and this large rf electric field superposes with the rf electric field between top electrode 21 and bottom electrode 22, the aggravation of plasma bombardment is just easily caused to cause the element containing conductive material in reaction chamber 10, as the damage of focusing ring.Therefore, preferably, the 3rd radio frequency power source 42 be applied on open metal ring electrode 23 is low frequency, and its frequency is such as be less than or equal to 13.56MHz.Because the 3rd radio frequency power source 42 frequency is lower, the rf electric field intensity formed between open metal ring electrode 23 and top electrode 21 is also very little, even can ignore, therefore just effectively can avoid the aggravation of plasma bombardment, extend the useful life with the element of conductive material.
Please continue to refer to Fig. 2, in one embodiment of this invention, focusing ring 13 and support ring 14 is also comprised in reaction chamber.Focusing ring 13 is located at around pending substrate 30, and in order to provide the environment of a relative closure around substrate 30, confined plasma is to improve the homogeneity of the plasma on substrate 30.Support ring 14 is positioned at below focusing ring, and it is surrounded on electrostatic chuck 12, can play effect that is fixing and support focusing ring 13.Wherein, the shape of cross section of support ring 14 is such as L shape or rectangle, and the lateral wall of its madial wall and electrostatic chuck 12 fits tightly as much as possible, prevents plasma from beating on the surface of electrostatic chuck 12, and protection electrostatic chuck 12 is from loss.Support ring 14 can adopt the insulating material such as pottery or quartz to be formed.In the present embodiment, using support ring 14 as annular insulator, open metal ring electrode 23 level is embedded with support ring 14, can form the induction field of horizontal direction thus at the fringe region of electrostatic chuck, thus can the plasma density of compensates for substrate fringe region.
In addition, in the present embodiment, the 3rd radio frequency power source putting on the low frequency of open metal ring electrode can be produced after power divider distributes by the second radio frequency power source, also can be the radio frequency power source of an independently low frequency.Specifically, as shown in Figures 2 and 3, in the present embodiment, the 3rd radio frequency power source 42 is independently radio frequency power source, then open metal ring electrode 23 one end is connected to the 3rd radio frequency power source 42 by the second radio frequency adaptation 43, the direct or indirect ground connection of the other end.Certainly, in other embodiments, 3rd radio frequency power source 42 is not independently radio frequency power source, then now be provided with power divider in the first radio frequency adaptation 41, power divider can select tunable capacitor, is responsible for regulating and distributing the radio-frequency power that the second radio frequency power source 40b is applied to open metal ring electrode 23.One end of open metal ring electrode 23 is connected to the second radio frequency power source 40b by power divider, the direct or indirect ground connection of the other end.The span of tunable capacitor is for being less than 1000pF.
As known from the above, in the present embodiment, be embedded by level in around the support ring 14 of electrostatic chuck 12 the open metal ring electrode 23 being connected with radio-frequency current, make electrostatic chuck 12 fringe region produce the induction field of horizontal direction.Like this, the plasma density of substrate 30 central area and fringe region can be adjusted and become approximately, and then preferably can be processed the uniformity when carrying out plasma treatment, as the uniformity of the speed of etching.
Embodiment 2
Fig. 4 is the structural representation of provided by the present invention kind of another embodiment of plasma processing apparatus, and the embodiment shown in Fig. 4 can independently be arranged or connected applications together with above-described embodiment.
The difference of the present embodiment and embodiment 1 is, reaction chamber in the present embodiment comprises plasma confinement assembly 15, it comprises mutually stacking in multiple vertical direction and the spaced concentric ring 15a that is parallel to each other, these concentric rings 15a is around electrostatic chuck upper area, that is to say the region between top electrode 21 and bottom electrode 22, the conversion zone P that this region can be thought that plasma is formed, deal with substrate 30.Have gap between adjacent concentric ring 15a, when making plasma treatment to substrate 30, the reacting gas processed can be discharged conversion zone P by gap, and plasma can be constrained in this conversion zone P.Concentric ring 15a can be made up of the material of various resisting plasma corrosion, such as, quartzy or ceramic.In order to utilize design of the present invention simultaneously, in plasma confinement assembly 15, at least one concentric ring 15a can be designed as the aforesaid annular insulator being embedded with open metal ring electrode 23, and wherein open metal ring electrode 23 is connected with radio-frequency current.Similar with the action principle in embodiment 1, open metal ring electrode 23 is formed by Wire-wound, is preferably winding 1 and encloses or 2 circles, and the radio-frequency current wherein circulated produces the magnetic field also further induction field produced along becket circumference, horizontal direction of alternation.This induction field compensate near open metal ring electrode 23, that is to say the electric field strength of conversion zone P fringe region, the plasma density of conversion zone P fringe region is increased, thus improves the uniformity of diverse location plasma density distribution above substrate 30.Radio-frequency current in open metal ring electrode 23 is produced by the 3rd radio frequency power source 42 applied thereon equally.In one embodiment, in plasma confinement assembly 15, multiple concentric ring 15a is annular insulator, wherein level is embedded open metal ring electrode 23 respectively, and in the case, these open metal ring electrodes 23 can be that serial or parallel connection or series-parallel connection are to the 3rd radio frequency power source 42.Preferably, the 3rd radio frequency power source 42 is low frequency power source, and its frequency is such as be less than or equal to 13.56MHz.Thus, the rf electric field intensity formed between open metal ring electrode 23 and top electrode 21 is also very little, even can ignore, and therefore just effectively can avoid the aggravation of plasma bombardment, extends the useful life of reaction chamber inner conductor element.3rd radio frequency power source 42 can be distribute the after-applied radio frequency power source at open metal ring electrode 23 by the second radio frequency power source 40b through power divider, also can be independently the 3rd radio frequency power source 42.Arranging of 3rd radio frequency power source 42 is same as the previously described embodiments, does not repeat them here.
In sum, plasma processing apparatus of the present invention, by arranging around substrate or substrate upper area the open metal ring electrode being connected with radio-frequency current, fringe region in reaction chamber generates the induction field of horizontal direction, thus the rf electric field compensated between original upper/lower electrode central area and fringe region impact pockety in reaction chamber, the plasma density of corresponding substrate center region and fringe region is uniformly distributed, so make plasma to the process of substrate evenly.In addition, because the radio frequency power source producing radio-frequency current in open metal ring electrode is low frequency, make the rf electric field producing vertical direction between open metal ring electrode and top electrode hardly, also would not aggravate plasma to the bombardment of element (as focusing ring) in chamber with conductive material, thus obviously can also extend the useful life of conductive material element (as focusing ring).
Although the present invention discloses as above with preferred embodiment; right described many embodiments are citing for convenience of explanation only; and be not used to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (16)
1. a capacitive coupling plasma processing apparatus, wherein, comprising:
Reaction chamber, it comprises:
For clamping the electrostatic chuck of pending substrate;
For the gas spray to described reaction chamber inside input process gas;
Top electrode arranged in parallel and bottom electrode, described top electrode is located in described gas spray, and described bottom electrode is located in described electrostatic chuck; And
First radio frequency power source and the second radio frequency power source, be connected with described bottom electrode by the first radio frequency adaptation, described first radio frequency power source produces plasma in order to the rf electric field providing radio-frequency power form vertical direction between described top electrode and described bottom electrode to excite process gas, described second radio frequency power source is in order to adjust the energy of described plasma
It is characterized in that:
Also comprise annular insulator in described reaction chamber, it is around the upper area of described electrostatic chuck and/or described electrostatic chuck; And by the open metal ring electrode of Wire-wound, be embedded in described annular insulator, described open metal ring electrode is connected with the radio-frequency current of low frequency to produce the induction field of horizontal direction for compensating described rf electric field central area and fringe region impact pockety in described reaction chamber.
2. capacitive coupling plasma processing apparatus according to claim 1, it is characterized in that, described reaction chamber also comprises focusing ring and the support ring for supporting described focusing ring, described focusing ring is around described substrate, and described support ring to be positioned at below described focusing ring and around described electrostatic chuck; Described support ring is described annular insulator, and described open metal ring electrode level is embedded in described support ring.
3. capacitive coupling plasma processing apparatus according to claim 2, is characterized in that, the cross section of described support ring is L shape or rectangle.
4. capacitive coupling plasma processing apparatus according to claim 1, it is characterized in that, described reaction chamber also comprises plasma confinement assembly, it comprises multiple mutually stacking in vertical direction and spaced concentric ring that is parallel to each other, and described plasma confinement assembly is around the region above described electrostatic chuck; At least one concentric ring in described plasma confinement assembly is described annular insulator.
5. capacitive coupling plasma processing apparatus according to claim 4, is characterized in that, the multiple concentric rings in described plasma confinement assembly are described annular insulator, and in described multiple concentric ring, level is embedded described open metal ring electrode respectively.
6. capacitive coupling plasma processing apparatus according to claim 5, is characterized in that, the in series or in parallel with each other or series-parallel connection of multiple described open metal ring electrode.
7. the capacitive coupling plasma processing apparatus according to any one of claim 1 to 6, is characterized in that, described radio-frequency current is produced by the 3rd radio frequency power source putting on described open metal ring electrode, and the frequency of described 3rd radio frequency power source is low frequency.
8. capacitive coupling plasma processing apparatus according to claim 7, it is characterized in that, described 3rd radio frequency power source connects one end of described open metal ring electrode by the second radio frequency adaptation, to produce described radio-frequency current in described open metal ring electrode; The other end ground connection of described open metal ring electrode.
9. capacitive coupling plasma processing apparatus according to claim 7, it is characterized in that, described first radio frequency adaptation comprises power divider, described second radio frequency power source is connected with one end of described open metal ring electrode by described power divider, to apply described 3rd radio frequency power source and produce described radio-frequency current on described open metal ring electrode; The other end ground connection of described open metal ring electrode.
10. capacitive coupling plasma processing apparatus according to claim 9, is characterized in that, described power divider is tunable capacitor.
11. capacitive coupling plasma processing apparatus according to claim 10, is characterized in that, the scope of described tunable capacitor is for being less than 1000pF.
12. capacitive coupling plasma processing apparatus according to claim 7, is characterized in that, the frequency of described 3rd radio frequency power source is less than or equal to 13.56MHz.
13. capacitive coupling plasma processing apparatus according to claim 7, is characterized in that, the frequency of described second radio frequency power source is less than or equal to 13.56MHz, and the frequency of described first radio frequency power source is higher than the frequency of described second radio frequency power source.
14. capacitive coupling plasma processing apparatus according to claim 1, is characterized in that, described top electrode and described bottom electrode are plate electrode.
15. capacitive coupling plasma processing apparatus according to claim 1, is characterized in that, described open metal ring electrode is that Wire-wound 1 encloses or 2 circles form.
16. capacitive coupling plasma processing apparatus according to claim 1, is characterized in that, the material of described annular insulator is selected from quartz or pottery.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310138892.7A CN103227091B (en) | 2013-04-19 | 2013-04-19 | Plasma processing apparatus |
| TW103113779A TW201448032A (en) | 2013-04-19 | 2014-04-16 | Plasma processing device |
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| CN201310138892.7A CN103227091B (en) | 2013-04-19 | 2013-04-19 | Plasma processing apparatus |
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| CN103227091A CN103227091A (en) | 2013-07-31 |
| CN103227091B true CN103227091B (en) | 2016-01-27 |
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| CN103227091A (en) | 2013-07-31 |
| TW201448032A (en) | 2014-12-16 |
| TWI514472B (en) | 2015-12-21 |
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