CN107644802B - Plasma etching apparatus and its edge ring assembly and electrostatic chuck - Google Patents
Plasma etching apparatus and its edge ring assembly and electrostatic chuck Download PDFInfo
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- CN107644802B CN107644802B CN201610579402.0A CN201610579402A CN107644802B CN 107644802 B CN107644802 B CN 107644802B CN 201610579402 A CN201610579402 A CN 201610579402A CN 107644802 B CN107644802 B CN 107644802B
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- 239000000463 material Substances 0.000 claims description 34
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- 229910052710 silicon Inorganic materials 0.000 claims description 10
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 8
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Abstract
The present invention provides plasma etching apparatus and its edge ring assembly and electrostatic chuck, to improve the non-uniform defect of etching speed.Wherein, the edge ring assembly includes: insertion ring, has inboard portion and exterior portion, and the inboard portion is located at the lower section of substrate edge, and the exterior portion has exceeded the coverage area of substrate edge outward；Focusing ring covers the exterior portion of insertion ring；Wherein, CFocus、CInsertSum of the two and CESCRatio between 0.9 to 1.1, CFocusFor the capacitance of the focusing ring, CInsertFor the capacitance of the insertion ring, CESCFor the capacitance of the electrostatic chuck.
Description
Technical field
The present invention relates to plasma etching apparatus.
Background technique
Corona treatment is such as etched, is widely used in the manufacture of semiconductor devices.Plasma bombardment equipment
The one kind for belonging to dry etching removes the surface atom of substrate by ion bombardment, to achieve the purpose that etching.
The problem often occurred is performed etching using traditional plasma processing equipment is: the quarter of substrate surface everywhere
It is uneven (non-uniform) to lose speed.For example, the etching speed at substrate edge is significantly faster than that substrate center region.
Summary of the invention
According to an aspect of the present invention, a kind of edge ring assembly for plasma etching apparatus is provided, described
In plasma etching apparatus, substrate to be processed is fixed by an electrostatic chuck, and the edge ring assembly includes:
Insertion ring has inboard portion and exterior portion, and the inboard portion is located at the lower section of substrate edge, the outside
Part has exceeded the coverage area of substrate edge outward；
Focusing ring covers the exterior portion of insertion ring；
Wherein, CFocus、CInsertSum of the two and CESCRatio between 0.9 to 1.1, CFocusFor the focusing ring
Capacitance, CInsertFor the capacitance of the insertion ring, CESCFor the capacitance of the electrostatic chuck.
Optionally, the focusing ring is made from a material that be electrically non-conductive.
Optionally, the focusing ring is made of aluminum oxide.
Optionally, the focusing ring is made of an electrically conducting material.
Optionally, the focusing ring is made of Si, C or SiC.
Optionally, the insertion ring is made of an electrically conducting material.
Optionally, the material of the insertion ring is different from focusing ring.
Optionally, the inboard portion of the insertion ring and exterior portion are integrally formed, are made of identical material.
According to another aspect of the present invention, a kind of edge ring assembly for plasma etching apparatus is provided, in institute
It states in plasma etching apparatus, substrate to be processed is fixed by an electrostatic chuck, and the edge ring assembly includes:
Insertion ring has the inboard portion being made of an electrically conducting material and the exterior portion being made of insulating material, described interior
Side section is located at the lower section of substrate edge, and the exterior portion has exceeded the coverage area of substrate edge outward；
Focusing ring covers at least described exterior portion of insertion ring；
Wherein, CFocus、Cinner-InsertSum of the two and CESCRatio between 0.9 to 1.1, CFocusFor the focusing
The capacitance of ring, Cinner-InsertFor the capacitance of the inboard portion of the insertion ring, CESCFor the capacitance of the electrostatic chuck.
Optionally, the focusing ring is made from a material that be electrically non-conductive.
Optionally, the focusing ring includes aluminum oxide.
Optionally, the focusing ring is made of an electrically conducting material.
Optionally, the focusing ring is made of Si, C or SiC.
Optionally, the material of the inner part is different from the focusing ring.
Optionally, the material of the inboard portion is metal.
Optionally, the material of the exterior portion is ceramics or quartz.
According to a further aspect of the invention, a kind of electrostatic chuck for plasma etching apparatus, including base are provided
Seat, the middle section of the pedestal is higher than fringe region, and forms boss portion, edge region formation recess in intermediate region
Portion is provided with edge ring above recessed portion；
In fixation substrate to be processed, the middle section of substrate is supported by the boss portion, and the fringe region of substrate is then
The top of the edge ring positioned at the recessed portion is extended to, accordingly, recessed portion is divided into inner and outer, and the inside is by base
Piece fringe region is covered, and outside is not covered by substrate edge region；
Wherein, electrostatic chuck is denoted as C in the capacitance of boss portioncenter, capacitance note of the electrostatic chuck in recess
Make Cinner-edge, CcenterWith Cinner-edgeRatio between 0.9 to 1.1.
Optionally, Cinner-edgeConsist of two parts: the capacitance of pedestal recessed portion and the capacitor of recessed portion upper element
Value.
It optionally, further include edge ring assembly, the edge ring assembly includes:
Insertion ring has inboard portion and exterior portion, and the inboard portion is located at the lower section of substrate edge, the outside
Part has exceeded the coverage area of substrate edge outward；
Focusing ring covers the exterior portion of insertion ring.
Optionally, the inboard portion of the insertion ring and exterior portion are integrally formed, are made of identical material.
Optionally, the insertion ring is made of an electrically conducting material.
Optionally, the inboard portion is made of an electrically conducting material, and the exterior portion is made of insulating material.
Optionally, the focusing ring is made of non-conducting material or conductive material.
Optionally, the focusing ring includes aluminum oxide.
Optionally, the focusing ring is made of Si, C or SiC.
According to a further aspect of the invention, a kind of plasma etching apparatus is provided comprising foregoing edge
Ring assemblies, or including foregoing electrostatic chuck.
Detailed description of the invention
Fig. 1 is the schematic diagram of the plasma sheath in plasma etch apparatus above substrate；
Fig. 2 is the structural schematic diagram of one embodiment of edge ring assembly；
Fig. 3 is equivalent circuit diagram corresponding with Fig. 2 embodiment；
Fig. 4 is the structural schematic diagram of another embodiment of edge ring assembly；
Fig. 5 is the structural schematic diagram of the another embodiment of edge ring assembly.
Specific embodiment
Etching speed is unevenly mainly due to substrate surface upper plasma sheaths (plasma sheath) no
It is uniformly distributed, in other words, the uneven distribution of sheaths boundary plasma density.For example, the sheaths of substrate W periphery are bent
(sheath curvature) (as shown in Figure 1) causes at more ion bombardment substrate edges, so that at substrate edge
With faster etching speed.Sheaths bending also causes an additional problem: at substrate edge, the angle of ion bombardment
It is not orthogonal to substrate surface, so that generating undesirable slope profile (undesired tilting profile).
One solution of above-mentioned etching speed problem of non-uniform or/and edge tilt problem is to increase electrostatic chuck
The area of ESC, so that it obviously exceeds the edge of substrate W, such as Fig. 1.But in etching process, it is exposed to plasma loop
The quality meeting high progression of the electrostatic chuck in border, and also result in particle contamination and metallic pollution.
Generally also above-mentioned etching speed problem of non-uniform is solved using edge ring (edge ring) or edge ring assembly
With edge tilt problem.It is curved that edge ring or edge ring assembly with proper height and structure can compensate for the sheaths at substrate edge
Song improves the distribution of plasma.But in continuous duplicate plasma etch process, the edge of the tool optimum efficiency
Ring can be corroded, so that its height reduces, the effect of the edge ring be caused to be substantially reduced.In addition, same plasma etching
The etching technics of equipment operation different condition or different parameters can also change the state of plasma sheath；It means that wanting
For different condition or the etching technics of different parameters, different edge ring or edge ring assembly are designed or configured.
The invention is intended to further improve above-mentioned etching speed problem of non-uniform or/and above-mentioned edge tilt problem.Such as Fig. 2
Shown, substrate W to be processed is fixed by an electrostatic chuck (ESC) 20, is configured with edge ring assembly 3 in the periphery of substrate W.Institute
Stating edge ring assembly 3 includes insertion ring 32 and focusing ring 34, wherein insertion ring 32 has inboard portion 322 and exterior portion
324, the inboard portion 322 is located at the lower section of substrate outer rim, and the exterior portion 324 has exceeded the covering of substrate outer rim outward
Range.Dotted line is the outer rim boundary of substrate W in figure, is also substantially considered as the boundary of inboard portion 322 Yu exterior portion 324
Line.Focusing ring 34 can be made of conductive material (for example, Si, C or SiC), can also by non-conducting material in other words insulating materials (ratio
Such as, aluminum oxide) it is made.The exterior portion 324 that focusing ring 34 covers insertion ring 32 (in the present embodiment, also covers
Inboard portion 322), avoid the insertion ring from being exposed to plasma environment.Although focusing ring 34 is directly exposed to plasma,
Since its material is the most common material or corrosion resistant material in the etching devices such as Si or C, thus, even if focusing ring damages
Consumption, will not cause impurity to pollute.In addition, the outer surface of focusing ring can also coat resistant material (e.g., yttrium oxide or yttrium fluoride
Deng), to reduce the consume of focusing ring.
To achieve the purpose that further to improve plasma sheath, the sum of insertion ring 32, capacitance of focusing ring 34 (that is,
Total capacitance value at substrate edge) will substantially with the capacitance of electrostatic chuck 20 (that is, total capacitance value of substrate center region) phase
Deng.In actual implementation, the deviation for allowing to have certain between the two, typically, when the deviation of the two is between positive and negative 10%
When, it also can considerably improve sheaths bending defect.Thus, in CFocus、CInsertSum of the two and CESCRatio arrived 0.9
When between 1.1, it can be considered that they are roughly equal.Wherein, CFocusFor the capacitance of the focusing ring 34, CInsertIt is inserted to be described
Enter the capacitance of ring 32, CESCFor the capacitance of the electrostatic chuck.
When the capacitance of electrostatic chuck 20 has given and can not change, it can usually pass through design/change/configuration focusing ring
34 height/material, insertion ring 32 height/material etc. keep above-mentioned capacitance equal or roughly equal.With insertion ring 32
It compares, positioned at external focusing ring 34, suffered limitation is more in terms of material selection, for example, to avoid consume serious, focusing ring
(at least focusing ring surface) Yao Caiyong resistant material；To prevent impurity from polluting, focusing ring (at least the matrix of focusing ring or
Say major part) material (e.g., silicon, carbon, silicon carbide, aluminum oxide etc.) more typical preferably in etching cavity.That is,
Design or change the material of internally positioned insertion ring 32, height is that capacitance at more convenient, effective adjusting substrate edge is (main
It will be by CFocus、CInsertTwo parts composition) means.
In actual implementation, the insertion ring 32 of unlike material can be selected as needed.For example, when needing to increase substrate edge
When the capacitance at place, the higher material production insertion ring of capacitivity (dielectric constant) can be used；When needing to reduce at substrate edge
Capacitance when, can be used the lower material of capacitivity (e.g., metallic aluminium) production insertion ring.Typically, insertion ring and focusing
Ring material can be different.Insertion ring is preferably conductive material (such as aluminium, silicon), and at least insertion ring is close to the inboard portion of electrostatic chuck
Preferably conductive material.
In the embodiment shown in Figure 2, the inboard portion 322 of the insertion ring 32 and exterior portion 324 are integrally formed, and
It is made of identical material.But this is not construed as limiting the invention.It can be related to different situations in subsequent embodiment.
In plasma etch process, electrostatic chuck 20, focusing ring 34, insertion ring 32 etc. can be considered as corresponding electricity
Container.Specifically, as shown in figure 3, the corresponding capacitor (C of insertion ringInsert) capacitor (C corresponding with focusing ringFocus) series connection
Afterwards, capacitor (C corresponding with electrostatic chuckESC) in parallel.Radio-frequency power (RF) is transmitted to above substrate by above-mentioned two branch
Plasma, be then transmitted to ground.Wherein, it is substrate center region, focusing ring insertion ring branch that electrostatic chuck branch is corresponding
Corresponding road is substrate edge region.The two branches affects determine that the plasma sheath above substrate is distributed.On making
The capacitance for stating two branches is roughly equal (balance), can improve plasma sheath distribution naturally, even inhibit to avoid completely
The sheaths of edge are bent, and then improve plasma distribution and ion bombardment angle.
Fig. 4 is the structural schematic diagram of another embodiment of edge ring assembly.Difference with Fig. 2 embodiment is only embodied in
Insertion ring.Same section can refer to the description of preceding embodiment, and only emphasis describes the details not existed together below.In the embodiment,
The inboard portion 422 of insertion ring 42 is made of with exterior portion 424 unlike material, wherein inboard portion 422 can be by conductive material
It is made, exterior portion 424 is made of insulating material.Inboard portion 422 in the present embodiment is equivalent to the insertion in Fig. 2 embodiment
Ring is whole, and structure (e.g., material selection, height setting etc.) and function etc. are identical as the insertion ring of Fig. 2, is provided to realize
The balance of the capacitance of substrate edge region and substrate center region improves the shape or profile of sheaths, avoids fringe region
Sheaths buckling phenomenon.That is, CFocus、Cinner-InsertSum of the two and CESCRatio between 0.9 to 1.1, wherein
CFocusFor the capacitance of the focusing ring, Cinner-InsertFor the capacitance of the inboard portion of the insertion ring, CESCIt is described quiet
The capacitance of electric chuck.
To reach more preferably sheaths improvement, inboard portion 422 preferably exceeds the coverage area of substrate edge outward.
That is, inboard portion 422 had both included the part below substrate edge, it also include the part beyond substrate edge coverage area.
In plasma etching, focuses ring surface and usually there is apparent ion sputtering (ion sputtering).Ion
Sputtering phenomenon may introduce " micro- exposure mask defect " at substrate edge, influence the progress of etching.RF bias power (RF Bias
When Power) increasing, ion sputtering phenomenon is more serious.Experiment shows to be set as being electrically insulated by the exterior portion 424 of insertion ring 42
Material (e.g., ceramics or quartz etc.), can obviously improve the ion sputtering for focusing ring surface.
Fig. 5 is the structural schematic diagram of the modification of two embodiments in front.It has roughly the same inventive concept.This reality
Apply in example, focusing ring 44, insertion ring 42 structure can be identical with the embodiment of front two.It the difference is that only electrostatic chuck
20 shape and the position of edge ring assembly 4.Such as Fig. 5, the electrostatic chuck 20 for plasma etching apparatus includes pedestal
21, the middle section of the pedestal 21 is higher than fringe region, and is formed in intermediate region formation boss portion 212, edge region
Recessed portion (does not indicate) in figure, and edge ring assembly 4 is provided with above recessed portion (in the specification and claims, can incite somebody to action
Edge ring is interpreted as a part of electrostatic chuck).Wherein, pedestal 21 again can be roughly divided into two parts: it is underlying mainly by
Main part 217 made of metal, the Electrostatic Absorption area 219 being located above.Horizontal dotted line in figure can be considered main part 217 with it is quiet
The line of demarcation in Electro Sorb area 219, dotted line top belong to Electrostatic Absorption area 219, belong to main part 217 below dotted line.Electrostatic
Adsorption zone 219 includes electrostatic attraction electrode layer and the upper and lower insulating layer (not showing in figure) for coating the electrode layer.Electrostatic Absorption area
219 may also include the structures (not shown) such as thermal insulation layer.Electrostatic Absorption area 219 is only positioned at the middle section (boss of pedestal 21
Portion 212).
In fixation substrate W to be processed, the middle section of substrate W is supported by the boss portion 212, the edge of substrate W
Region then extends to the top of the edge ring assembly 4 positioned at the recessed portion, and accordingly, recessed portion is divided into two regions, i.e.,
Inner and outer, the inside are covered by substrate edge region, and the outside is not covered by substrate edge region.In figure
Vertical dotted line can be considered the line of demarcation in recess and outside.
To achieve the purpose that further to improve plasma sheath, electrostatic chuck 20 can be made in 212 (base in other words of boss portion
Piece middle section) capacitance and electrostatic chuck 20 recess (substrate edge region in other words) capacitance substantially phase
Deng.That is, CcenterWith Cinner-edgeRatio between 0.9 to 1.1, wherein CcenterIt is electrostatic chuck in boss portion
Capacitance, Cinner-edgeFor electrostatic chuck recess capacitance.
Wherein, capacitance C of the electrostatic chuck 20 in recessinner-edgeIt is mainly determined by three parts: pedestal 21
Insertion ring 42 and focusing ring 44 above recessed portion, recessed portion, insertion ring 42 therein play absolutely main make with focusing ring 44 again
With recessed portion is negligible.That is, Cinner-edgeSubstantially equivalent to member above the capacitance of pedestal recessed portion and recessed portion
The sum of capacitance of part.Capacitance C of the electrostatic chuck 20 in boss portion 212centerMainly to be determined by two parts: the master of lower section
Absolute main function is played in the Electrostatic Absorption area 219 in body portion 217 and top, Electrostatic Absorption area 219 therein, and main part 217 can neglect
Slightly disregard.That is, CcenterThe substantially equivalent to capacitance in Electrostatic Absorption area.Further, since main part is to the shadow of capacitance
Ring minimum, CcenterThe capacitance of substantially equivalent to entire electrostatic chuck.Thus it is not difficult to find out that, the capacitance relationship in Fig. 2 and Fig. 4
The formula suitable simplification version of relational expression in this present embodiment to a certain extent.
It is discussed in detail although the contents of the present invention have passed through above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read above content, for of the invention
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (26)
1. being used for the edge ring assembly of plasma etching apparatus, in the plasma etching apparatus, substrate to be processed
It is fixed by an electrostatic chuck, the edge ring assembly includes:
Insertion ring has inboard portion and exterior portion, and the inboard portion is located at the lower section of substrate edge, the exterior portion
The coverage area of substrate edge is had exceeded outward；
Focusing ring covers the exterior portion of insertion ring；
Wherein, CFocus、CInsertSum of the two and CESCRatio between 0.9 to 1.1, CFocusFor the capacitor of the focusing ring
Value, CInsertFor the capacitance of the insertion ring, CESCFor the capacitance of the electrostatic chuck.
2. edge ring assembly as described in claim 1, which is characterized in that the focusing ring is made from a material that be electrically non-conductive.
3. edge ring assembly as claimed in claim 2, which is characterized in that the focusing ring is made of aluminum oxide.
4. edge ring assembly as described in claim 1, which is characterized in that the focusing ring is made of an electrically conducting material.
5. edge ring assembly as claimed in claim 4, which is characterized in that the focusing ring is made of Si, C or SiC.
6. edge ring assembly as described in claim 1, which is characterized in that the insertion ring is made of an electrically conducting material.
7. edge ring assembly as described in claim 1 or 6, which is characterized in that the material of the insertion ring is different from focusing ring.
8. edge ring assembly as described in claim 1, which is characterized in that the inboard portion of the insertion ring and exterior portion one
Body is formed, and is made of identical material.
9. being used for the edge ring assembly of plasma etching apparatus, in the plasma etching apparatus, substrate to be processed
It is fixed by an electrostatic chuck, the edge ring assembly includes:
Insertion ring has the inboard portion being made of an electrically conducting material and the exterior portion being made of insulating material, the inside portion
Quartile has exceeded the coverage area of substrate edge in the lower section of substrate edge, the exterior portion outward；
Focusing ring covers at least described exterior portion of insertion ring；
Wherein, CFocus、Cinner-InsertSum of the two and CESCRatio between 0.9 to 1.1, CFocusFor the electricity of the focusing ring
Capacitance, Cinner-InsertFor the capacitance of the inboard portion of the insertion ring, CESCFor the capacitance of the electrostatic chuck.
10. edge ring assembly as claimed in claim 9, which is characterized in that the focusing ring is made from a material that be electrically non-conductive.
11. edge ring assembly as claimed in claim 10, which is characterized in that the focusing ring includes aluminum oxide.
12. edge ring assembly as claimed in claim 9, which is characterized in that the focusing ring is made of an electrically conducting material.
13. edge ring assembly as claimed in claim 12, which is characterized in that the focusing ring is made of Si, C or SiC.
14. edge ring assembly as claimed in claim 9, which is characterized in that the material of the inner part and the focusing ring
It is different.
15. edge ring assembly as claimed in claim 9, which is characterized in that the material of the inboard portion is metal.
16. edge ring assembly as claimed in claim 9, which is characterized in that the material of the exterior portion is ceramics or quartz.
17. being used for the electrostatic chuck of plasma etching apparatus, including pedestal, the middle section of the pedestal is higher than marginal zone
Domain, and boss portion, edge region formation recessed portion are formed in intermediate region, edge ring is provided with above recessed portion；
In fixation substrate to be processed, the middle section of substrate is supported by the boss portion, and the fringe region of substrate then extends
To the top for the edge ring for being located at the recessed portion, accordingly, recessed portion is divided into inner and outer, and the inside is by substrate side
Edge region is covered, and outside is not covered by substrate edge region；
Wherein, electrostatic chuck is denoted as C in the capacitance of boss portioncenter, it is denoted as in the capacitance of recess upper element
Cinner-edge, CcenterWith Cinner-edgeRatio between 0.9 to 1.1.
18. electrostatic chuck as claimed in claim 17, which is characterized in that Cinner-edgeIt further include the capacitance of pedestal recessed portion.
19. electrostatic chuck as claimed in claim 17 further includes edge ring assembly, the edge ring assembly includes:
Insertion ring has inboard portion and exterior portion, and the inboard portion is located at the lower section of substrate edge, the exterior portion
The coverage area of substrate edge is had exceeded outward；
Focusing ring covers the exterior portion of insertion ring.
20. electrostatic chuck as claimed in claim 19, which is characterized in that the inboard portion of the insertion ring and exterior portion one
Body is formed, and is made of identical material.
21. electrostatic chuck as claimed in claim 20, which is characterized in that the insertion ring is made of an electrically conducting material.
22. electrostatic chuck as claimed in claim 19, which is characterized in that the inboard portion is made of an electrically conducting material, described
Exterior portion is made of insulating material.
23. electrostatic chuck as claimed in claim 19, which is characterized in that the focusing ring is by non-conducting material or conductive material
It is made.
24. electrostatic chuck as claimed in claim 23, which is characterized in that the focusing ring includes aluminum oxide.
25. electrostatic chuck as claimed in claim 23, which is characterized in that the focusing ring is made of Si, C or SiC.
26. a kind of plasma etching apparatus, which is characterized in that it includes such as the described in any item edges of claim 1 to 16
Ring assemblies, or including the described in any item electrostatic chucks of such as claim 17 to 25.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610579402.0A CN107644802B (en) | 2016-07-21 | 2016-07-21 | Plasma etching apparatus and its edge ring assembly and electrostatic chuck |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610579402.0A CN107644802B (en) | 2016-07-21 | 2016-07-21 | Plasma etching apparatus and its edge ring assembly and electrostatic chuck |
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| CN107644802B true CN107644802B (en) | 2019-09-06 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4322200A1 (en) * | 2022-08-10 | 2024-02-14 | SK enpulse Co., Ltd. | Focus ring and plasma etching apparatus comprising the same |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7089977B2 (en) * | 2018-08-02 | 2022-06-23 | 東京エレクトロン株式会社 | Plasma etching method and plasma processing equipment |
| CN109256316A (en) * | 2018-09-29 | 2019-01-22 | 德淮半导体有限公司 | Plasma etching apparatus and its method for etching plasma |
| CN112885690B (en) * | 2019-11-29 | 2023-10-20 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
| CN111653469B (en) * | 2020-06-30 | 2024-01-09 | 上海华力集成电路制造有限公司 | Focusing ring applied to etching equipment, forming method thereof and etching equipment |
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|---|---|---|---|---|
| CN1682344A (en) * | 2002-09-18 | 2005-10-12 | 朗姆研究公司 | Method and apparatus for the compensation of edge ring wear in a plasma processing chamber |
| CN103227091A (en) * | 2013-04-19 | 2013-07-31 | 中微半导体设备(上海)有限公司 | Plasma processing device |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1682344A (en) * | 2002-09-18 | 2005-10-12 | 朗姆研究公司 | Method and apparatus for the compensation of edge ring wear in a plasma processing chamber |
| CN103227091A (en) * | 2013-04-19 | 2013-07-31 | 中微半导体设备(上海)有限公司 | Plasma processing device |
Cited By (1)
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| EP4322200A1 (en) * | 2022-08-10 | 2024-02-14 | SK enpulse Co., Ltd. | Focus ring and plasma etching apparatus comprising the same |
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