CN103196577A - Temperature sensor based on CMUT and preparation method and application method thereof - Google Patents
Temperature sensor based on CMUT and preparation method and application method thereof Download PDFInfo
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Abstract
本发明公开了一种基于CMUT的温度传感器及其制备方法与应用方法，其整体结构由温度敏感薄膜和基座两部分组成；其中温度敏感薄膜采用高热膨胀系数半导体材料制成，其中部经离子掺杂形成上电极；基座中部自上而下依次为C型空腔、二氧化硅隔绝层、T型下电极；且T型下电极下部外侧由内而外依次为应力缓解凹槽以及二氧化硅底板，二氧化硅底板上围绕C型空腔设置有二氧化硅支柱；该CMUT结构在用于温度测量时，通过温度敏感薄膜与基座之间的热应力失配而引起的敏感薄膜谐振频率变化来实现温度检测；CMUT上、下电极均位于空腔内，有效电极间距小，寄生电容小、可实现低功耗、高灵敏度、快速温度检测。
The invention discloses a temperature sensor based on CMUT and its preparation method and application method. The upper electrode is formed by doping; the middle part of the base is composed of a C-shaped cavity, a silicon dioxide insulating layer, and a T-shaped lower electrode from top to bottom; and the outside of the lower part of the T-shaped lower electrode is a stress relief groove and a Silicon oxide bottom plate, silicon dioxide pillars are arranged around the C-shaped cavity on the silicon dioxide bottom plate; when the CMUT structure is used for temperature measurement, the sensitive film is caused by the thermal stress mismatch between the temperature sensitive film and the base The resonant frequency changes to realize temperature detection; the upper and lower electrodes of CMUT are located in the cavity, the effective electrode spacing is small, and the parasitic capacitance is small, which can realize low power consumption, high sensitivity and fast temperature detection.
Description
Technical field
The invention belongs to the MEMS technical field, relate to a kind of temperature-detecting device, particularly a kind of temperature sensor based on CMUT and preparation method thereof and application process.
Background technology
Temperature sensor is mainly used in the measurement of temperature, is a kind of widely used sensor.Temperature is one and the closely-related physical quantity of people's living environment, and also being one needs the important physical amount measured in production, scientific research, life.Because the various performances of material are nearly all relevant with temperature, so the accurate measurement of temperature always is a very important task in the production of association area and scientific research.Therefore, the research to such sensor has extremely important value.
The temperature sensor that occurs mainly comprises thermistor, the bimetallic strip based on different heat expansion coefficient, thermopair, PN joint, surface acoustic wave, quartz crystal resonant mode, MEMS temperature sensor etc. at present.The development of temperature sensor also from traditional discrete temperature sensor to simulation integrated temperature sensor/controller and even intelligent temperature sensor.Along with the raising of industrial automatization and the development of multi-sensor information fusion technology, the exigence thermal inertia is little, and response is rapid, and volume is little, the temperature sensor that energy consumption is low.
In recent years, along with the development of microelectric technique and MEMS technology, the MEMS Inverstigation of Temperature Sensor increases gradually.The temperature sensor that the MEMS temperature sensor is more traditional, it is little to have a volume, and light, the intrinsic thermal capacitance of quality is little and be easy to realize integrated focus, and conventional temperature sensor has very big advantage relatively.
CMUT is based on one of MEMS Study on Technology focus, has advantages such as size is little, in light weight, electromechanical properties are good, highly sensitive, bandwidth is wide, noise is low, operating temperature range is wide.In addition, CMUT can make, form high density arrays in batches, and easy and electronic component is integrated on the same silicon chip.Nowadays, CMUT successfully is used for medical imaging, nondestructive examination, object distance detection and fluid-velocity survey field, and in market ripe commercial product is arranged.The plurality of advantages of above-mentioned CMUT and successful Application experience thereof have supplied advantage for design and the preparation based on the temperature sensor of CMUT.
Summary of the invention
The objective of the invention is to propose a kind of temperature sensor based on CMUT and preparation method thereof and application process, to realize low-power consumption, high sensitivity temperature detection.
For achieving the above object, the technical solution used in the present invention is as follows:
A kind of temperature sensor based on CMUT, its one-piece construction is made up of responsive to temperature film and pedestal two parts; Wherein the responsive to temperature film adopts the high thermal expansion coefficient semiconductor material to make, and its middle part forms top electrode through ion doping; The pedestal middle part is followed successively by C type cavity, silicon dioxide isolation layer, T type bottom electrode from top to bottom; And the outside, T type bottom electrode bottom is followed successively by stress relieve groove and silicon dioxide base plate from inside to outside, is provided with the silicon dioxide pillar around C type cavity on the silicon dioxide base plate; Described T type bottom electrode top is positioned at silicon dioxide base plate upside, is the major part of bottom electrode; T type bottom electrode bottom connects the silicon dioxide base plate at thickness direction, is used for being electrically connected.
Described stress relieve depth of groove is identical with T type bottom electrode bottom thickness, and T type bottom electrode bottom and silicon dioxide base plate are separated in a lateral direction.
Described stress relieve groove surfaces is coated with silicon nitride layer.
A kind of preparation method of the temperature sensor based on CMUT may further comprise the steps:
(1) get one＜111〉crystal orientation monocrystalline silicon is as first monocrystalline silicon, and photoetching, its upper surface of etching form first groove, and adopt the local ion doping techniques, carry out ion from the upper and lower both sides of first monocrystalline silicon and mix, and form T type bottom electrode;
(2) first groove surfaces of photoetching first monocrystalline silicon is not mixed monocrystalline silicon between the etching first groove inwall and the T type bottom electrode top, and etching depth is identical with T type bottom electrode top thickness, begins to take shape C type cavity shape this moment;
(3) the photoetching first monocrystalline silicon lower surface, the not doped monocrystalline silicon that joins from its lower surface etching and T type bottom electrode bottom forms second groove, and second depth of groove is identical with bottom electrode bottom thickness;
(4) the photoetching first monocrystalline silicon lower surface, etching second groove outside monocrystalline silicon, attenuate second groove outside monocrystalline silicon thickness is to shorten the subsequent oxidation process time;
(5) in the first monocrystalline silicon upper surface deposited silicon nitride layer, photoetching, the silicon nitride layer of etching except T type bottom electrode upper face; Simultaneously in the first monocrystalline silicon lower surface deposited silicon nitride layer, photoetching, etching second groove outside silicon nitride layer, remaining silicon nitride layer covers whole second groove and T type bottom electrode lower surface;
(6) adopt abundant oxidation first monocrystalline silicon of thermal oxidation technique, make except protected T type bottom electrode part, remainder monocrystalline silicon all is oxidized to silicon dioxide, forms silicon dioxide pillar, stress relieve groove and silicon dioxide base plate this moment;
(7) etch away the silicon nitride layer that covers T type bottom electrode upper face;
(8) adopt the dry method thermal oxidation technique, oxidation T type bottom electrode upper face forms certain thickness silicon dioxide isolation layer, final C type cavity shape; Simultaneously, get another monocrystalline silicon as second monocrystalline silicon, as substrate, surface deposition responsive to temperature thin layer thereon;
(9) adopt chemical Mechanical Polishing Technique to polish the upper surface of first monocrystalline silicon, i.e. silicon dioxide pillar surface; Adopt the local ion doping techniques to mix boron ion formation top electrode at the responsive to temperature thin layer of second monocrystalline silicon simultaneously, and polish its upper surface with chemical Mechanical Polishing Technique;
(10) with responsive to temperature film upper surface anode linkage on the pillar upper surface of first monocrystalline silicon and second monocrystalline silicon, form vacuum C type cavity;
(11) etch away second monocrystalline silicon, release temperature sensitive thin film, and its surface of chemically mechanical polishing; The photoetching first monocrystalline silicon lower surface silicon nitride layer etches away the silicon nitride layer that covers T type bottom electrode lower surface.
In the step (8) at second monocrystalline silicon surface deposit spathic silicon or the silicon carbide layer.
A kind of temperature sensor application process based on CMUT, measure the resonance frequency of CMUT, when temperature change, because causing the responsive to temperature film to produce than the imperial palace STRESS VARIATION when the temperature variation because there is larger difference in thermal expansivity between responsive to temperature film and the silicon dioxide base plate, and then cause that the CMUT resonance frequency changes, record this frequency change, can obtain the measured temperature value by the corresponding relation between temperature variation and the frequency change.
A kind of temperature sensor based on CMUT of the present invention, its groundwork mechanism is: cause the responsive to temperature film to produce than the imperial palace STRESS VARIATION when the temperature variation because there is larger difference in thermal expansivity between responsive to temperature film and the silicon dioxide base plate, and then cause that the CMUT resonance frequency changes, and can obtain the measured temperature value by the corresponding relation between temperature variation and the frequency change.
A kind of temperature sensor based on CMUT of the present invention has the following advantages at least:
1, the upper and lower electrode of CMUT all is positioned at cavity, and with respect to the situation of whole monocrystal silicon substrate as bottom electrode, the active electrode spacing is less between these structure two electrodes, stray capacitance is little, thereby can realize low-power consumption, high sensitivity temperature detection.
2, owing to change to realize temperature detection by the CMUT resonance frequency, the digitizing output signal, be convenient to transmission, antijamming capability is strong.
3, the base construction design takes into full account temperature variation to the influence of structurally internal stress and shape thereof, can effectively guarantee the stability of this temperature sensor serviceability in large-temperature range.
Description of drawings
Fig. 1 is cross-sectional view of the present invention;
Fig. 2 is preparation method's of the present invention process flow diagram;
The following expression of label among the figure:
Embodiment
Describe the present invention below in conjunction with accompanying drawing:
Please refer to Fig. 1, its concrete structure and corresponding function feature described:
General structure of the present invention is made up of responsive to temperature film 1 and pedestal 2, and wherein pedestal 2 middle parts are followed successively by C type cavity 7, silicon dioxide isolation layer 6, T type bottom electrode 5 from top to bottom; 4 outsides, T type bottom electrode bottom are followed successively by stress relieve groove 10, silicon dioxide base plate 9 from inside to outside.
Described responsive to temperature film 1 central region as top electrode, adopts the high thermal expansion coefficient semiconductor material after ion heavy doping, its thickness is advisable to keep good electrical conductivity and temperature sensitivity.
Described silicon dioxide isolation layer 6 covers 3 surfaces, T type bottom electrode top, adopt the dry oxidation technology to form, its thermal expansivity be 0.55 * 10-6/ ℃ less than 2.33 * 10-6/ ℃ of single crystal silicon material, thereby can effectively suppress T type bottom electrode top 3 because of the distortion that temperature variation causes, guarantee the stability (voltage that subsides, electromechanical coupling factor etc.) of CMUT running parameter; In addition, silicon dioxide isolation layer 6 also is used for the electrical isolation between the upper and lower electrode.Silicon dioxide isolation layer 6 thickness should be determined according to T type bottom electrode top 3 thickness and measured temperature scope.
Described T type bottom electrode 5 is made up of electrode top 3 and electrode bottom 4, and wherein electrode top 3 is positioned at cavity inside, is parallel to responsive to temperature film 1(top electrode), form parallel plate capacitor with top electrode; Electrode top 3 thickness should make it have good electrical conductivity and less internal stress.Electrode bottom 4 connects silicon dioxide base plate 9 at thickness direction (longitudinal direction), be used for external power source between be electrically connected, its lateral dimension should guarantee that it has excellent conducting performance.
Described stress relieve groove 10 is around T type bottom electrode bottom 4, between T type bottom electrode bottom 4 and silicon dioxide base plate 9, stress relieve groove 10 surface coverage have silicon nitride layer 11, it keeps apart T type bottom electrode bottom 4 and silicon dioxide base plate 9 in a lateral direction, avoided the influence of interior reply pedestal 2 structures that Yin Wendu causes between the two, the degree of depth of stress relieve groove 10 on pedestal 2 is identical with the thickness of T type bottom electrode bottom 4, and its width can be determined according to pedestal 2 structural strengths and processing technology.
Described silicon nitride layer 11 covers T type bottom electrode bottom 4 outer surfaces, perhaps cover stress relieve groove 10, in the actual fabrication process because the restriction of processing technology at present, can only satisfy and cover stress relieve groove 10 most surfaces, do not cover 10 whole surfaces, this is to be determined by designed processing technology.Silicon nitride layer 11 is used for electricity on the one hand and isolates, protects T type bottom electrode bottom 4, can suppress the deformation that T type bottom electrode bottom 4 causes because of temperature on the other hand.
Described silicon dioxide base plate 9 is used for other structure divisions of supporting base 2, as silicon dioxide pillar 8, T type bottom electrode 5 etc.
Described responsive to temperature film 1 thermal expansivity much larger than pedestal 2 be silicon dioxide pillar and silicon dioxide base plate (mainly be thermal oxide silicon dioxide, the influence of 5 pairs of pedestals 2 of bottom electrode can be ignored) thermal expansivity, thereby when temperature variation, responsive to temperature film 1 stress state can have greatly changed, thereby change the resonance frequency of CMUT, the present invention namely is based on the detection that this mechanism realizes temperature.
The present invention is based on the temperature sensor of CMUT, this CMUT structure is when being used for temperature survey, and mainly the sensitive thin film resonance frequency that causes by the thermal stress mismatch between responsive to temperature film and the pedestal changes to realize temperature detection.Its concrete application process is: the resonance frequency that the design subsequent resonant circuit is followed the trail of the CMUT sensing probe changes, and measures this frequency with frequency counter or other devices.During concrete the measurement, need the corresponding resonance frequency of a certain reference temperature of calibration (as 0 ℃), when temperature change, sensitive thin film 1 interior state changes, and then cause that the CMUT resonance frequency also corresponding variation can take place, record this frequency change with frequency counter, can obtain the dut temperature value by the relation between resonance frequency displacement and the temperature variation.
Please refer to Fig. 2, preparation method of the present invention be elaborated:
(1) get one＜111〉crystal orientation monocrystalline silicon is as first monocrystalline silicon, photoetching, its upper surface of etching form first groove, and adopt the local ion doping techniques, and carry out ion from the upper and lower both sides of first monocrystalline silicon and mix, form T type bottom electrode 5 and reach not doped monocrystalline silicon 11.
(2) first groove surfaces of photoetching first monocrystalline silicon is not mixed monocrystalline silicon between the etching first groove inwall and the bottom electrode top, and etching depth is identical with T type electrode top thickness, and begin to take shape C type cavity shape this moment, forms not doped monocrystalline silicon 12.
(3) the photoetching first monocrystalline silicon lower surface, the not doped monocrystalline silicon that joins from its lower surface etching and T type bottom electrode bottom (mixing monocrystalline silicon), it is identical with bottom electrode 5 bottom thickness to form second groove, 13, the second depths of groove.
(4) the photoetching first monocrystalline silicon lower surface, etching second groove 13 outside monocrystalline silicon with attenuate second groove outside monocrystalline silicon thickness, shorten the subsequent oxidation process time, and this moment, doped monocrystalline silicon 12 did not become 14.
(5) in the first monocrystalline silicon upper surface deposited silicon nitride layer, photoetching, the silicon nitride layer of etching except T type bottom electrode 5 upper faces, the silicon nitride layer 15 of remaining T type bottom electrode 5 upper faces is used for preventing that the upper surface of T type bottom electrode 5 is oxidized in subsequent oxidation technology; Simultaneously in the first monocrystalline silicon lower surface deposited silicon nitride layer, photoetching, etching second groove 13 outside silicon nitride layers, remaining silicon nitride layer 16 covers whole groove 13 and bottom electrode 5 lower surface, is used for preventing that bottom electrode 5 lower surface are oxidized in subsequent oxidation technology.
(6) adopt abundant oxidation first monocrystalline silicon of thermal oxidation technique, make except protected T type bottom electrode 5 remainder monocrystalline silicon 14 and all be oxidized to silicon dioxide, form silicon dioxide pillar 8, stress relieve groove 10 and silicon dioxide base plate 9 at this moment.
(7) etch away the silicon nitride layer 15 that covers T type bottom electrode 5 upper faces.
(8) adopt the dry method thermal oxidation technique, oxidation T type bottom electrode 5 upper faces form certain thickness silicon dioxide isolation layer 6 and final C type cavity shape.Simultaneously, get another monocrystalline silicon as second monocrystalline silicon, as substrate, surface deposition responsive to temperature thin layer (as polysilicon, silit) thereon.
(9) adopting chemical Mechanical Polishing Technique to polish the upper surface of first monocrystalline silicon, also is pillar 8 surfaces; Adopt the local ion doping techniques to mix boron ion formation top electrode (responsive to temperature film) 1 at the responsive to temperature thin layer of second monocrystalline silicon simultaneously, and polish 1 upper surface with chemical Mechanical Polishing Technique.
(10) with responsive to temperature film 1 upper surface anode linkage on the first monocrystalline silicon pillar, 8 upper surfaces and second monocrystalline silicon, form vacuum C type cavity 7.
(11) etch away second monocrystalline silicon, release temperature sensitive thin film 1, and its surface of chemically mechanical polishing are in the hope of obtaining mechanical property preferably; The photoetching first monocrystalline silicon lower surface silicon nitride layer 16 etches away the silicon nitride that covers bottom electrode 5 lower surface, is electrically connected so that realize bottom electrode, forms final silicon nitride layer 11.
In conjunction with above-mentioned embodiment, the present invention is based on the temperature sensor of CMUT, its reference configuration parameter is:
Responsive to temperature film effective diameter: 10 ~ 200 μ m
Responsive to temperature film thickness: 0.1 ~ 10 μ m
Effective cavity height: 0.2 ~ 5 μ m
Cavity diameter: 10 ~ 200 μ m
A kind of temperature sensor based on CMUT of the present invention, its reference performance index is:
Temperature control: magnitude kHz/ ℃
Temperature range: 0 ~ 120 ℃, the actual temp scope is determined by the structure and material parameter of sensor.
The above only is one embodiment of the present invention, it or not whole or unique embodiment, the conversion of any equivalence that those of ordinary skills take technical solution of the present invention by reading instructions of the present invention is claim of the present invention and contains.
Claims (6)
1. temperature sensor based on CMUT, it is characterized in that: its one-piece construction is made up of responsive to temperature film (1) and pedestal (2) two parts; Wherein responsive to temperature film (1) adopts the high thermal expansion coefficient semiconductor material to make, and its middle part forms top electrode through ion doping; Pedestal (1) middle part is followed successively by C type cavity (7), silicon dioxide isolation layer (6), T type bottom electrode (5) from top to bottom; And the outside, T type bottom electrode bottom (4) is followed successively by stress relieve groove (10) and silicon dioxide base plate (9) from inside to outside, and silicon dioxide base plate (9) is gone up around C type cavity and is provided with silicon dioxide pillar (8); Described T type bottom electrode top (3) is positioned at silicon dioxide base plate (9) upside, is the major part of bottom electrode; T type bottom electrode bottom (4) connects silicon dioxide base plate (9) at thickness direction, is used for being electrically connected.
2. the temperature sensor based on CMUT according to claim 1, it is characterized in that: described stress relieve groove (10) degree of depth is identical with T type bottom electrode bottom (4) thickness, and T type bottom electrode bottom (4) and silicon dioxide base plate (9) are separated in a lateral direction.
3. the temperature sensor based on CMUT according to claim 1, it is characterized in that: described stress relieve groove (10) surface coverage has silicon nitride layer (11).
4. the preparation method based on the temperature sensor of CMUT is characterized in that, may further comprise the steps:
(1) get one＜111〉crystal orientation monocrystalline silicon is as first monocrystalline silicon (12), and photoetching, its upper surface of etching form first groove, and adopt the local ion doping techniques, carry out ion from the upper and lower both sides of first monocrystalline silicon and mix, and form T type bottom electrode (5);
(2) first groove surfaces of photoetching first monocrystalline silicon is not mixed monocrystalline silicon between the etching first groove inwall and the T type bottom electrode top, and etching depth is identical with T type bottom electrode top thickness, begins to take shape C type cavity shape this moment;
(3) the photoetching first monocrystalline silicon lower surface, the not doped monocrystalline silicon that joins from its lower surface etching and T type bottom electrode bottom forms second groove (13), and second depth of groove is identical with bottom electrode bottom thickness;
(4) the photoetching first monocrystalline silicon lower surface, etching second groove outside monocrystalline silicon (14), attenuate second groove outside monocrystalline silicon thickness is to shorten the subsequent oxidation process time;
(5) in the first monocrystalline silicon upper surface deposited silicon nitride layer (15), photoetching, the silicon nitride layer of etching except T type bottom electrode upper face; Simultaneously in the first monocrystalline silicon lower surface deposited silicon nitride layer (16), photoetching, etching second groove (13) outside silicon nitride layer, remaining silicon nitride layer covers whole second groove (13) and T type bottom electrode lower surface;
(6) adopt abundant oxidation first monocrystalline silicon of thermal oxidation technique, make except protected T type bottom electrode part, remainder monocrystalline silicon all is oxidized to silicon dioxide, forms silicon dioxide pillar (8), stress relieve groove (10) and silicon dioxide base plate (9) this moment;
(7) etch away the silicon nitride layer that covers T type bottom electrode upper face;
(8) adopt the dry method thermal oxidation technique, oxidation T type bottom electrode upper face forms certain thickness silicon dioxide isolation layer, final C type cavity shape; Simultaneously, get another monocrystalline silicon as second monocrystalline silicon, as substrate, surface deposition responsive to temperature thin layer thereon;
(9) adopt chemical Mechanical Polishing Technique to polish the upper surface of first monocrystalline silicon, i.e. silicon dioxide pillar (8) surface; Adopt the local ion doping techniques to mix boron ion formation top electrode at the responsive to temperature thin layer (1) of second monocrystalline silicon simultaneously, and polish its upper surface with chemical Mechanical Polishing Technique;
(10) with responsive to temperature film upper surface anode linkage on the pillar upper surface of first monocrystalline silicon and second monocrystalline silicon, form vacuum C type cavity (7);
(11) etch away second monocrystalline silicon, release temperature sensitive thin film, and its surface of chemically mechanical polishing; The photoetching first monocrystalline silicon lower surface silicon nitride layer etches away the silicon nitride layer that covers T type bottom electrode lower surface.
5. the preparation method of the temperature sensor based on CMUT according to claim 7 is characterized in that: in the step (8) at second monocrystalline silicon surface deposit spathic silicon or the silicon carbide layer.
6. temperature sensor application process based on CMUT as claimed in claim 1, it is characterized in that: the resonance frequency of measuring CMUT, when temperature change, because causing the responsive to temperature film to produce than the imperial palace STRESS VARIATION when the temperature variation because there is larger difference in thermal expansivity between responsive to temperature film and the silicon dioxide base plate, and then cause that the CMUT resonance frequency changes, record this frequency change, can obtain the measured temperature value by the corresponding relation between temperature variation and the frequency change.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106768481A (en) * | 2017-01-10 | 2017-05-31 | 苏州大学 | A kind of Graphene suspension beam structure temperature measuring equipment |
| CN108918662A (en) * | 2018-05-16 | 2018-11-30 | 西安交通大学 | A kind of CMUTs fluid density sensor and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040236223A1 (en) * | 2003-05-22 | 2004-11-25 | Siemens Medical Solutions Usa, Inc.. | Transducer arrays with an integrated sensor and methods of use |
| US20070180916A1 (en) * | 2006-02-09 | 2007-08-09 | General Electric Company | Capacitive micromachined ultrasound transducer and methods of making the same |
| US20090122651A1 (en) * | 2007-10-18 | 2009-05-14 | Mario Kupnik | Direct wafer bonded 2-D CUMT array |
| CN101868981A (en) * | 2007-12-03 | 2010-10-20 | 科隆科技公司 | Stacked transducing devices |
| CN102520032A (en) * | 2011-12-05 | 2012-06-27 | 西安交通大学 | CMUT (Capacitive Micromachined Ultrasonic Transducer)-based biochemical transducer and manufacturing method thereof |
-
2013
- 2013-03-15 CN CN201310084404.9A patent/CN103196577B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040236223A1 (en) * | 2003-05-22 | 2004-11-25 | Siemens Medical Solutions Usa, Inc.. | Transducer arrays with an integrated sensor and methods of use |
| US20070180916A1 (en) * | 2006-02-09 | 2007-08-09 | General Electric Company | Capacitive micromachined ultrasound transducer and methods of making the same |
| US20090122651A1 (en) * | 2007-10-18 | 2009-05-14 | Mario Kupnik | Direct wafer bonded 2-D CUMT array |
| CN101868981A (en) * | 2007-12-03 | 2010-10-20 | 科隆科技公司 | Stacked transducing devices |
| CN102520032A (en) * | 2011-12-05 | 2012-06-27 | 西安交通大学 | CMUT (Capacitive Micromachined Ultrasonic Transducer)-based biochemical transducer and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 王菲: "电容式微加工超声传感器的建模与仿真", 《优秀博硕士学位论文全文数据库 (硕士) 工程科技Ⅰ辑》, 15 June 2006 (2006-06-15) * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106768481A (en) * | 2017-01-10 | 2017-05-31 | 苏州大学 | A kind of Graphene suspension beam structure temperature measuring equipment |
| CN108918662A (en) * | 2018-05-16 | 2018-11-30 | 西安交通大学 | A kind of CMUTs fluid density sensor and preparation method thereof |
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