CN103117344B - LED and preparation method thereof - Google Patents
LED and preparation method thereof Download PDFInfo
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- CN103117344B CN103117344B CN201310044888.4A CN201310044888A CN103117344B CN 103117344 B CN103117344 B CN 103117344B CN 201310044888 A CN201310044888 A CN 201310044888A CN 103117344 B CN103117344 B CN 103117344B
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- 238000002360 preparation method Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 238000009413 insulation Methods 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000004020 luminiscence type Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 230000000903 blocking effect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 62
- 229910002601 GaN Inorganic materials 0.000 description 40
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 40
- 230000004888 barrier function Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000005433 particle physics related processes and functions Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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Abstract
The invention discloses a kind of LED, including Semiconductor substrate, N-type GaN layer, extension luminescent layer and p-type GaN layer it is sequentially formed with on substrate, presumptive area on the surface of p-type GaN layer causes damage by ion sputtering or plasma bombardment, or by the way of ion implanting, change surface doping, so that p-type GaN in this presumptive area presents the high contact resistance characteristic close to insulation, being formed with transparency conducting layer and P-type electrode in p-type GaN layer, P-type electrode is corresponding with the position of presumptive area.Compared with prior art, this programme simplifies technological process, has saved cost of manufacture, instead of the current blocking layer process of complexity with simple technique, for reducing chip cost, improves volume production production capacity and has great importance.
Description
Technical field
The invention belongs to photoelectron luminescent device and manufacture field, particularly describe a kind of uniform LED of current expansion or
OLED chip, it just reaches same effect without traditional current barrier layer.
Background technology
Along with the rise of the breakthrough adulterated with GaN (gallium nitride) the material p-type third generation semi-conducting material as starting point, adjoint
The technological break-through of high brightness light emitting diode (Light Emitting Diode, LED) based on III group-III nitride, use
Nitride LED in new generation of green environmental protection solid light source is becoming new study hotspot.At present, LED applies not
Disconnected upgrading and market are for the demand of LED so that LED just develops towards high-power and high brightness direction.The big merit of high brightness
The subject matter that rate LED chip faces is that light efficiency is not so good as small-power, and its main cause is that current expansion is uneven.Due to LED core
The p-type GaN resistance of sheet is far above N-shaped GaN, and when current is injected, electric current is concentrated in p-type surrounding them, the even meeting of current unevenness
Causing chip light efficiency to reduce, this point is especially pronounced when Bulk current injection.
For solving the problem of current crowding, existing technology is to increase by one at electrode and transparency conducting layer (such as ITO) lower section
Layer current barrier layer (Fig. 1), its material is typically SiO2, thickness from tens nanometer to hundreds of nanometers, due to current blocking
Layer insulation, injection current can not force it extending transversely along ITO directly down, reaches to increase the purpose of current expansion.Electric current hinders
Barrier only uses at p-type base part, is not the most used in n-type electrode, therefore only shows p-type surrounding them situation in Fig. 1.Existing
SiO2Current barrier layer makes needs multiple tracks chip technology processing procedure, grows SiO including PECVD2, litho pattern, BOE wet method rotten
Erosion SiO2, go the steps such as photoresist, add the production cycle, improve production cost.
Summary of the invention
It is an object of the invention to Simplified flowsheet, cost-effective, do not make current barrier layer, complete with the technique more simplified
The preparation of LED.
In order to reach object above, the invention provides a kind of LED, including: Semiconductor substrate, described lining
N-type GaN layer, extension luminescent layer and p-type GaN layer, the presumptive area on the surface of described p-type GaN layer it is sequentially formed with at the end
Cause damage by ion sputtering or plasma bombardment, or by the way of ion implanting, change surface doping, so that this is pre-
Determine p-type GaN in region and present the high contact resistance characteristic close to insulation, described p-type GaN layer is formed with transparency conducting layer
And P-type electrode, described P-type electrode is corresponding with the position of presumptive area.
Further improving as the present invention, described LED includes outside ultraviolet, blue and green light, gold-tinted or HONGGUANG
Prolong sheet.
Further improving as the present invention, above applicable compound surface not only includes GaN, also includes GaAs table
Face, also includes organic OLED materials surface.
According to a further aspect in the invention, it is provided that a kind of preparation side for preparing above-described LED
Method, comprises the technical steps that:
A) provide semi-conductive substrate, described Semiconductor substrate is sequentially formed with N-type GaN layer, extension luminescent layer and P
Type GaN layer；
B) by photoetching making mask layer, the presumptive area on the surface of p-type GaN layer is exposed outside mask layer, other
Region still has photoresist to cover；
C) p-type GaN layer exposed by ion sputtering or plasma bombardment causes p-type GaN to damage, or is noted by ion
The mode entered changes surface doping, so that p-type GaN in this presumptive area presents the high contact resistance characteristic close to insulation；
D) remove mask layer, described p-type GaN layer is formed transparency conducting layer and P-type electrode, described P-type electrode
Corresponding with the position of presumptive area, complete the making of LED chip according to normal process, simply without making current barrier layer
?.
Further improving as the present invention, transparency conducting layer can be ITO, it is also possible to NiAu or other electrically conducting transparent materials
Material (such as AZO etc.), is not described in detail at this.
Further improving as the present invention, described ion sputtering includes that pure physical ion sputters, or chemical reaction
Sputtering.
Further improving as the present invention, described chemical reaction sputters by chemical reaction etching part surface layer.
Further improve as the present invention, as the mask layer of particle bombardment, as long as reaching protective effect can be light
Photoresist can also be other materials, is not described in detail at this.
Compared with prior art, the present invention uses the method that particle physics bombards, and is needing to stop the visuals of electric current
Causing p-type GaN contact resistance significantly to rise, during LED chip work, injection current tends to extending transversely near to avoid this high resistance
Insulating regions, thus reach to increase current expansion, alleviate the purpose of p-type surrounding them current crowding.Compare traditional electric current resistance
Barrier technique, this programme simplifies technological process, has saved cost of manufacture, instead of the current blocking of complexity with simple technique
Layer process, for reducing chip cost, improves volume production production capacity and has great importance.
Accompanying drawing explanation
Fig. 1 is the chip design of existing current barrier layer, and it schematically describes p-type surrounding them；
Fig. 2 to Fig. 5 is the chip technology flow chart on no current barrier layer in this programme；
Fig. 2 describes by photoetching in chip surface p-type GaN layer, and the figure that making needs to stop electric current is allowed to expose,
Remainder is still covered by mask layer (such as photoresist), the p-type GaN layer that physical bombardment exposes；Fig. 3 describes removal mask
Layer, the part of p-type GaN after bombardment presents the nearly insulation characterisitic of high resistance；Fig. 4 describes making electrically conducting transparent in p-type GaN layer
Layer；Fig. 5 describes making p-type electrode over transparent conductive layer, and arrow show current expansion effect；In figure: 1:p type GaN；2:
Current barrier layer；3: transparency conducting layer；4: present the p-type GaN layer of high-impedance state；5:p type electrode；6: mask layer；7: particle bangs
Hit.
Detailed description of the invention
Below in conjunction with the accompanying drawings presently preferred embodiments of the present invention is described in detail, so that advantages and features of the invention energy
It is easier to be readily appreciated by one skilled in the art, thus protection scope of the present invention is made apparent clear and definite defining.
Seeing shown in accompanying drawing 5, LED p-type surrounding them in its schematic description the present embodiment, it includes being positioned at
The Semiconductor substrate of bottom, substrate is sequentially formed with N-type GaN layer, extension luminescent layer and p-type GaN layer 1, the table of p-type GaN layer 1
Presumptive area on face causes damage by ion sputtering or plasma bombardment, or changes surface by the way of ion implanting
Doping, so that p-type GaN in this presumptive area presents the high contact resistance characteristic close to insulation, ultimately forms one piece and presents height
The p-type GaN layer region 4 of resistance state, p-type GaN layer 1 is formed transparency conducting layer 3 and P-type electrode 5, P-type electrode 5 with present
The position in the p-type GaN layer region 4 of high-impedance state is corresponding, and arrow show current expansion effect and principle.
Above-mentioned LED includes ultraviolet, blue and green light, gold-tinted or HONGGUANG epitaxial wafer, and applicable compound surface is not
Light includes GaN, also includes GaAs surface, also including organic OLED materials surface.
See shown in accompanying drawing 2 to accompanying drawing 5, a kind of preparation method for preparing above-mentioned LED presented below, bag
Include following processing step:
A) first provide semi-conductive substrate, Semiconductor substrate is sequentially formed with N-type GaN layer, extension luminescent layer and p-type
GaN layer；
B) by photoetching making mask layer, the presumptive area on the surface of p-type GaN layer is exposed outside mask layer, other
Region still has photoresist to cover；
C) p-type GaN layer exposed by ion sputtering or plasma bombardment causes p-type GaN to damage, or is noted by ion
The mode entered changes surface doping, so that p-type GaN in this presumptive area presents the high contact resistance characteristic close to insulation；
D) remove mask layer, p-type GaN layer is formed transparency conducting layer and P-type electrode, P-type electrode and presumptive area
Position is corresponding, completes the making of LED chip according to normal process, simply without making current barrier layer.
It should be noted that transparency conducting layer can be ITO, it is also possible to NiAu or other transparent conductive materials are (such as AZO
Deng), it is not described in detail at this.It addition, ion sputtering includes that pure physical ion sputters, or chemical reaction sputtering, chemistry is anti-
Should even can be with etching part surface layer.It will be understood to those skilled in the art that the mask layer as particle bombardment, as long as reaching
To protective effect can be photoresist can also be other materials, be not described in detail at this.
Compared with prior art, the present invention uses the method that particle physics bombards, and is needing to stop the visuals of electric current
Causing p-type GaN contact resistance significantly to rise, during LED chip work, injection current tends to extending transversely near to avoid this high resistance
Insulating regions, thus reach to increase current expansion, alleviate the purpose of p-type surrounding them current crowding.Compare traditional electric current resistance
Barrier technique, this programme simplifies technological process, has saved cost of manufacture, instead of the current blocking of complexity with simple technique
Layer process, for reducing chip cost, improves volume production production capacity and has great importance.
Embodiment of above only for technology design and the feature of the present invention are described, its object is to allow and is familiar with technique
People understands present disclosure and is carried out, and can not limit the scope of the invention with this, all according to present invention spirit
The equivalence that essence is done changes or modifies, and all should contain within the scope of the present invention.
Claims (6)
1. a LED, including: Semiconductor substrate, described substrate is sequentially formed with N-type GaN layer, extension luminescence
Layer and p-type GaN layer, it is characterised in that: the ion sputtering by pure physics of the presumptive area on the surface of described p-type GaN layer
Cause damage, so that p-type GaN in this presumptive area presents the high contact resistance characteristic close to insulation, described p-type GaN layer
On be formed with transparency conducting layer and P-type electrode, described P-type electrode is corresponding with the position of presumptive area.
2. according to the LED described in right 1, it is characterised in that: described LED includes ultraviolet, blue light, green
Light, gold-tinted or HONGGUANG epitaxial wafer.
3. according to the LED described in right 2, it is characterised in that: the compound surface of described LED includes
Any one of GaN surface, GaAs surface or organic OLED surface.
4., for preparing a preparation method for the LED as described in claim 1 or 2 or 3, walk including following technique
Rapid:
A) provide semi-conductive substrate, described Semiconductor substrate is sequentially formed with N-type GaN layer, extension luminescent layer and p-type
GaN layer；
B) by photoetching making mask layer, the presumptive area on the surface of p-type GaN layer is exposed outside mask layer；
C) p-type GaN layer exposed by the ion sputtering of pure physics causes p-type GaN to damage, so that the p-type in this presumptive area
GaN presents the high contact resistance characteristic close to insulation；
D) removing mask layer, form transparency conducting layer and P-type electrode in described p-type GaN layer, described P-type electrode is with pre-
The position determining region is corresponding.
5. according to the preparation method of the LED described in right 4, it is characterised in that: described transparency conducting layer includes
ITO, NiAu or AZO material.
6. according to the preparation method of the LED described in right 4, it is characterised in that: described mask layer includes photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310044888.4A CN103117344B (en) | 2013-02-05 | 2013-02-05 | LED and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310044888.4A CN103117344B (en) | 2013-02-05 | 2013-02-05 | LED and preparation method thereof |
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| Publication Number | Publication Date |
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| CN103117344A CN103117344A (en) | 2013-05-22 |
| CN103117344B true CN103117344B (en) | 2016-08-24 |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105244420B (en) * | 2015-08-28 | 2018-07-31 | 圆融光电科技股份有限公司 | The production method of GaN base light emitting |
| CN106206894A (en) * | 2016-07-19 | 2016-12-07 | 厦门乾照光电股份有限公司 | A kind of light emitting diode with high value GaN current barrier layer and preparation method thereof |
| CN109768124B (en) * | 2018-12-28 | 2020-08-14 | 华灿光电（浙江）有限公司 | Growth method of light-emitting diode epitaxial wafer |
| CN110544737B (en) * | 2019-09-12 | 2021-08-10 | 厦门乾照光电股份有限公司 | Light-emitting diode with modified region and preparation method thereof |
| CN112750929A (en) * | 2021-01-26 | 2021-05-04 | 长沙壹纳光电材料有限公司 | P-GAN layer modified LED chip and manufacturing method thereof |
| CN113284992B (en) * | 2021-03-26 | 2022-05-13 | 华灿光电(苏州）有限公司 | Preparation method of light-emitting diode epitaxial wafer |
| CN115020554B (en) * | 2022-06-14 | 2025-01-28 | 江西耀驰科技有限公司 | A flip-chip LED chip and its preparation method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752478A (en) * | 2008-12-09 | 2010-06-23 | 世纪晶源科技有限公司 | Light-emitting diode for improving current expansion efficiency and preparation method thereof |
| CN203071118U (en) * | 2013-02-05 | 2013-07-17 | 海迪科（南通）光电科技有限公司 | LED light-emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3516434B2 (en) * | 1997-12-25 | 2004-04-05 | 昭和電工株式会社 | Compound semiconductor light emitting device |
| US8399273B2 (en) * | 2008-08-18 | 2013-03-19 | Tsmc Solid State Lighting Ltd. | Light-emitting diode with current-spreading region |
| CN102522472A (en) * | 2011-12-30 | 2012-06-27 | 厦门市三安光电科技有限公司 | Light-emitting diode with current barrier layer and production method of light-emitting diode with current barrier layer |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752478A (en) * | 2008-12-09 | 2010-06-23 | 世纪晶源科技有限公司 | Light-emitting diode for improving current expansion efficiency and preparation method thereof |
| CN203071118U (en) * | 2013-02-05 | 2013-07-17 | 海迪科（南通）光电科技有限公司 | LED light-emitting device |
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Denomination of invention: LED light emitting device and its preparation method Effective date of registration: 20220215 Granted publication date: 20160824 Pledgee: CIC financing guarantee Haian Co.,Ltd. Pledgor: DURA-CHIP (NANTONG) Ltd. Registration number: Y2022320010071 |